CA2589168A1 - Removal of mems sacrificial layers using supercritical fluid/chemical formulations - Google Patents

Removal of mems sacrificial layers using supercritical fluid/chemical formulations Download PDF

Info

Publication number
CA2589168A1
CA2589168A1 CA002589168A CA2589168A CA2589168A1 CA 2589168 A1 CA2589168 A1 CA 2589168A1 CA 002589168 A CA002589168 A CA 002589168A CA 2589168 A CA2589168 A CA 2589168A CA 2589168 A1 CA2589168 A1 CA 2589168A1
Authority
CA
Canada
Prior art keywords
composition
scf
silicon
solvent
contacting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002589168A
Other languages
English (en)
French (fr)
Inventor
Michael B. Korzenski
Thomas H. Baum
Eliodor G. Ghenciu
Chongying Xu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Technology Materials Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/724,791 external-priority patent/US20050118832A1/en
Application filed by Individual filed Critical Individual
Publication of CA2589168A1 publication Critical patent/CA2589168A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/80—Cleaning only by supercritical fluids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00468—Releasing structures
    • B81C1/00476—Releasing structures removing a sacrificial layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/262—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by physical means only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Micromachines (AREA)
CA002589168A 2003-12-01 2004-11-30 Removal of mems sacrificial layers using supercritical fluid/chemical formulations Abandoned CA2589168A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10/724,791 2003-12-01
US10/724,791 US20050118832A1 (en) 2003-12-01 2003-12-01 Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
US10/782,355 US7160815B2 (en) 2003-12-01 2004-02-19 Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
US10/782,355 2004-02-19
PCT/US2004/040015 WO2005054405A1 (en) 2003-12-01 2004-11-30 Removal of mems sacrificial layers using supercritical fluid/chemical formulations

Publications (1)

Publication Number Publication Date
CA2589168A1 true CA2589168A1 (en) 2005-06-16

Family

ID=34657407

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002589168A Abandoned CA2589168A1 (en) 2003-12-01 2004-11-30 Removal of mems sacrificial layers using supercritical fluid/chemical formulations

Country Status (6)

Country Link
US (1) US7517809B2 (https=)
EP (1) EP1689825A4 (https=)
JP (1) JP2007513522A (https=)
KR (1) KR20060121168A (https=)
CA (1) CA2589168A1 (https=)
WO (1) WO2005054405A1 (https=)

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JP4464125B2 (ja) * 2003-12-22 2010-05-19 ソニー株式会社 構造体の作製方法及びシリコン酸化膜エッチング剤
US20050227482A1 (en) * 2004-03-24 2005-10-13 Korzenski Michael B Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers
KR101255691B1 (ko) * 2004-07-29 2013-04-17 퀄컴 엠이엠에스 테크놀로지스, 인크. 간섭 변조기의 미소기전 동작을 위한 시스템 및 방법
EP1879704A2 (en) * 2005-04-15 2008-01-23 Advanced Technology Materials, Inc. Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
WO2006124201A2 (en) * 2005-05-13 2006-11-23 Sachem, Inc. Selective wet etching of oxides
CN101228092A (zh) 2005-07-22 2008-07-23 高通股份有限公司 用于mems装置的支撑结构及其方法
EP2495212A3 (en) * 2005-07-22 2012-10-31 QUALCOMM MEMS Technologies, Inc. Mems devices having support structures and methods of fabricating the same
US7795061B2 (en) * 2005-12-29 2010-09-14 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US7382515B2 (en) 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US7450295B2 (en) * 2006-03-02 2008-11-11 Qualcomm Mems Technologies, Inc. Methods for producing MEMS with protective coatings using multi-component sacrificial layers
KR100768121B1 (ko) * 2006-05-23 2007-10-18 경희대학교 산학협력단 초임계 추출용 계면활성제, 그 제조방법 및 상기계면활성제를 이용한 초임계추출방법
US7763546B2 (en) * 2006-08-02 2010-07-27 Qualcomm Mems Technologies, Inc. Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
US20080125342A1 (en) * 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
US7733552B2 (en) 2007-03-21 2010-06-08 Qualcomm Mems Technologies, Inc MEMS cavity-coating layers and methods
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US7569488B2 (en) * 2007-06-22 2009-08-04 Qualcomm Mems Technologies, Inc. Methods of making a MEMS device by monitoring a process parameter
JP5279301B2 (ja) * 2008-03-05 2013-09-04 ステラケミファ株式会社 微細加工処理剤、及び微細加工処理方法
US7851239B2 (en) 2008-06-05 2010-12-14 Qualcomm Mems Technologies, Inc. Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices
US7864403B2 (en) * 2009-03-27 2011-01-04 Qualcomm Mems Technologies, Inc. Post-release adjustment of interferometric modulator reflectivity
WO2010134184A1 (ja) 2009-05-21 2010-11-25 ステラケミファ株式会社 微細加工処理剤、及び微細加工処理方法
US8101561B2 (en) 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
US9663356B2 (en) 2014-06-18 2017-05-30 Nxp Usa, Inc. Etch release residue removal using anhydrous solution
US20150368557A1 (en) * 2014-06-23 2015-12-24 Hyosan Lee Metal etchant compositions and methods of fabricating a semiconductor device using the same
KR102675057B1 (ko) * 2019-10-29 2024-06-12 오씨아이 주식회사 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07109825B2 (ja) * 1992-01-13 1995-11-22 富士通株式会社 半導体基板表面もしくは薄膜表面のドライ洗浄法
US6149828A (en) * 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US6500605B1 (en) * 1997-05-27 2002-12-31 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process
US6306564B1 (en) * 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US5789505A (en) 1997-08-14 1998-08-04 Air Products And Chemicals, Inc. Surfactants for use in liquid/supercritical CO2
US7099065B2 (en) * 2000-08-03 2006-08-29 Reflectivity, Inc. Micromirrors with OFF-angle electrodes and stops
US20030073302A1 (en) 2001-10-12 2003-04-17 Reflectivity, Inc., A California Corporation Methods for formation of air gap interconnects
US7326673B2 (en) * 2001-12-31 2008-02-05 Advanced Technology Materials, Inc. Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates
JP2003224099A (ja) * 2002-01-30 2003-08-08 Sony Corp 表面処理方法
US6521466B1 (en) * 2002-04-17 2003-02-18 Paul Castrucci Apparatus and method for semiconductor wafer test yield enhancement
US6669785B2 (en) 2002-05-15 2003-12-30 Micell Technologies, Inc. Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide
US6989358B2 (en) 2002-10-31 2006-01-24 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for removal of photoresists
US7485611B2 (en) 2002-10-31 2009-02-03 Advanced Technology Materials, Inc. Supercritical fluid-based cleaning compositions and methods
US6943139B2 (en) 2002-10-31 2005-09-13 Advanced Technology Materials, Inc. Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations
US7119052B2 (en) 2003-06-24 2006-10-10 Advanced Technology Materials, Inc. Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers
US20050118832A1 (en) 2003-12-01 2005-06-02 Korzenski Michael B. Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations

Also Published As

Publication number Publication date
US20070111533A1 (en) 2007-05-17
JP2007513522A (ja) 2007-05-24
US7517809B2 (en) 2009-04-14
EP1689825A4 (en) 2008-09-24
KR20060121168A (ko) 2006-11-28
WO2005054405A1 (en) 2005-06-16
EP1689825A1 (en) 2006-08-16

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Legal Events

Date Code Title Description
FZDE Discontinued