JP2007513522A - 超臨界流体／化学調合物を用いたｍｅｍｓ犠牲層の除去 - Google Patents

超臨界流体／化学調合物を用いたｍｅｍｓ犠牲層の除去 Download PDF

Info

Publication number
JP2007513522A
JP2007513522A JP2006542670A JP2006542670A JP2007513522A JP 2007513522 A JP2007513522 A JP 2007513522A JP 2006542670 A JP2006542670 A JP 2006542670A JP 2006542670 A JP2006542670 A JP 2006542670A JP 2007513522 A JP2007513522 A JP 2007513522A
Authority
JP
Japan
Prior art keywords
composition
scf
silicon
etching
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006542670A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007513522A5 (https=
Inventor
コーゼンスキー，マイケル，ビー．
バウム，トーマス，エイチ．
ヘンチウ，エリオウダー，ジー．
スー，チョンイン
Original Assignee
アドバンスド テクノロジー マテリアルズ，インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/724,791 external-priority patent/US20050118832A1/en
Application filed by アドバンスド テクノロジー マテリアルズ，インコーポレイテッド filed Critical アドバンスド テクノロジー マテリアルズ，インコーポレイテッド
Publication of JP2007513522A publication Critical patent/JP2007513522A/ja
Publication of JP2007513522A5 publication Critical patent/JP2007513522A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/80—Cleaning only by supercritical fluids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00468—Releasing structures
    • B81C1/00476—Releasing structures removing a sacrificial layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/262—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by physical means only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Micromachines (AREA)
JP2006542670A 2003-12-01 2004-11-30 超臨界流体／化学調合物を用いたｍｅｍｓ犠牲層の除去 Pending JP2007513522A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/724,791 US20050118832A1 (en) 2003-12-01 2003-12-01 Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
US10/782,355 US7160815B2 (en) 2003-12-01 2004-02-19 Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
PCT/US2004/040015 WO2005054405A1 (en) 2003-12-01 2004-11-30 Removal of mems sacrificial layers using supercritical fluid/chemical formulations

Publications (2)

Publication Number Publication Date
JP2007513522A true JP2007513522A (ja) 2007-05-24
JP2007513522A5 JP2007513522A5 (https=) 2008-01-24

Family

ID=34657407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006542670A Pending JP2007513522A (ja) 2003-12-01 2004-11-30 超臨界流体／化学調合物を用いたｍｅｍｓ犠牲層の除去

Country Status (6)

Country Link
US (1) US7517809B2 (https=)
EP (1) EP1689825A4 (https=)
JP (1) JP2007513522A (https=)
KR (1) KR20060121168A (https=)
CA (1) CA2589168A1 (https=)
WO (1) WO2005054405A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009212347A (ja) * 2008-03-05 2009-09-17 Stella Chemifa Corp 微細加工処理剤、及び微細加工処理方法
US8974685B2 (en) 2009-05-21 2015-03-10 Stella Chemifa Corporation Fine-processing agent and fine-processing method
JP2021072436A (ja) * 2019-10-29 2021-05-06 オーシーアイ カンパニー リミテッドＯＣＩ Ｃｏｍｐａｎｙ Ｌｔｄ． シリコン窒化膜エッチング溶液、及びこれを用いた半導体素子の製造方法

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4464125B2 (ja) * 2003-12-22 2010-05-19 ソニー株式会社 構造体の作製方法及びシリコン酸化膜エッチング剤
US20050227482A1 (en) * 2004-03-24 2005-10-13 Korzenski Michael B Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers
KR101255691B1 (ko) * 2004-07-29 2013-04-17 퀄컴 엠이엠에스 테크놀로지스, 인크. 간섭 변조기의 미소기전 동작을 위한 시스템 및 방법
EP1879704A2 (en) * 2005-04-15 2008-01-23 Advanced Technology Materials, Inc. Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
WO2006124201A2 (en) * 2005-05-13 2006-11-23 Sachem, Inc. Selective wet etching of oxides
CN101228092A (zh) 2005-07-22 2008-07-23 高通股份有限公司 用于mems装置的支撑结构及其方法
EP2495212A3 (en) * 2005-07-22 2012-10-31 QUALCOMM MEMS Technologies, Inc. Mems devices having support structures and methods of fabricating the same
US7795061B2 (en) * 2005-12-29 2010-09-14 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US7382515B2 (en) 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US7450295B2 (en) * 2006-03-02 2008-11-11 Qualcomm Mems Technologies, Inc. Methods for producing MEMS with protective coatings using multi-component sacrificial layers
KR100768121B1 (ko) * 2006-05-23 2007-10-18 경희대학교 산학협력단 초임계 추출용 계면활성제, 그 제조방법 및 상기계면활성제를 이용한 초임계추출방법
US7763546B2 (en) * 2006-08-02 2010-07-27 Qualcomm Mems Technologies, Inc. Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
US20080125342A1 (en) * 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
US7733552B2 (en) 2007-03-21 2010-06-08 Qualcomm Mems Technologies, Inc MEMS cavity-coating layers and methods
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US7569488B2 (en) * 2007-06-22 2009-08-04 Qualcomm Mems Technologies, Inc. Methods of making a MEMS device by monitoring a process parameter
US7851239B2 (en) 2008-06-05 2010-12-14 Qualcomm Mems Technologies, Inc. Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices
US7864403B2 (en) * 2009-03-27 2011-01-04 Qualcomm Mems Technologies, Inc. Post-release adjustment of interferometric modulator reflectivity
US8101561B2 (en) 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
US9663356B2 (en) 2014-06-18 2017-05-30 Nxp Usa, Inc. Etch release residue removal using anhydrous solution
US20150368557A1 (en) * 2014-06-23 2015-12-24 Hyosan Lee Metal etchant compositions and methods of fabricating a semiconductor device using the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003513342A (ja) * 1999-11-02 2003-04-08 東京エレクトロン株式会社 超臨界二酸化炭素法を用いた基板からフォトレジストおよび残渣の除去
JP2003224099A (ja) * 2002-01-30 2003-08-08 Sony Corp 表面処理方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07109825B2 (ja) * 1992-01-13 1995-11-22 富士通株式会社 半導体基板表面もしくは薄膜表面のドライ洗浄法
US6149828A (en) * 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US6306564B1 (en) * 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US5789505A (en) 1997-08-14 1998-08-04 Air Products And Chemicals, Inc. Surfactants for use in liquid/supercritical CO2
US7099065B2 (en) * 2000-08-03 2006-08-29 Reflectivity, Inc. Micromirrors with OFF-angle electrodes and stops
US20030073302A1 (en) 2001-10-12 2003-04-17 Reflectivity, Inc., A California Corporation Methods for formation of air gap interconnects
US7326673B2 (en) * 2001-12-31 2008-02-05 Advanced Technology Materials, Inc. Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates
US6521466B1 (en) * 2002-04-17 2003-02-18 Paul Castrucci Apparatus and method for semiconductor wafer test yield enhancement
US6669785B2 (en) 2002-05-15 2003-12-30 Micell Technologies, Inc. Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide
US6989358B2 (en) 2002-10-31 2006-01-24 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for removal of photoresists
US7485611B2 (en) 2002-10-31 2009-02-03 Advanced Technology Materials, Inc. Supercritical fluid-based cleaning compositions and methods
US6943139B2 (en) 2002-10-31 2005-09-13 Advanced Technology Materials, Inc. Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations
US7119052B2 (en) 2003-06-24 2006-10-10 Advanced Technology Materials, Inc. Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers
US20050118832A1 (en) 2003-12-01 2005-06-02 Korzenski Michael B. Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003513342A (ja) * 1999-11-02 2003-04-08 東京エレクトロン株式会社 超臨界二酸化炭素法を用いた基板からフォトレジストおよび残渣の除去
JP2003224099A (ja) * 2002-01-30 2003-08-08 Sony Corp 表面処理方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009212347A (ja) * 2008-03-05 2009-09-17 Stella Chemifa Corp 微細加工処理剤、及び微細加工処理方法
US8974685B2 (en) 2009-05-21 2015-03-10 Stella Chemifa Corporation Fine-processing agent and fine-processing method
JP2021072436A (ja) * 2019-10-29 2021-05-06 オーシーアイ カンパニー リミテッドＯＣＩ Ｃｏｍｐａｎｙ Ｌｔｄ． シリコン窒化膜エッチング溶液、及びこれを用いた半導体素子の製造方法
JP7575901B2 (ja) 2019-10-29 2024-10-30 オーシーアイ カンパニー リミテッド シリコン窒化膜エッチング溶液、及びこれを用いた半導体素子の製造方法

Also Published As

Publication number Publication date
US20070111533A1 (en) 2007-05-17
US7517809B2 (en) 2009-04-14
EP1689825A4 (en) 2008-09-24
CA2589168A1 (en) 2005-06-16
KR20060121168A (ko) 2006-11-28
WO2005054405A1 (en) 2005-06-16
EP1689825A1 (en) 2006-08-16

Similar Documents

Publication Publication Date Title
US7160815B2 (en) Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
US7517809B2 (en) Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
KR100785131B1 (ko) 플루오르화 수소를 함유하는 플루오르화 용매 조성물
US7011716B2 (en) Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products
US20070251551A1 (en) Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems
EP1572833B1 (en) Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal
US7211553B2 (en) Processing of substrates with dense fluids comprising acetylenic diols and/or alcohols
JP2007526653A (ja) 超臨界流体ベースの組成物を用いたケイ素含有粒状物質除去の向上
JP2006505010A (ja) フォトレジストを除去するための超臨界二酸化炭素／化学調合物
JP2007513522A5 (https=)
JP2003206497A (ja) 洗浄及び乾燥方法
CN101198683B (zh) 使用溶剂体系内的自组装单层除去高剂量离子注入光致抗蚀剂
KR100734342B1 (ko) 아세틸렌계 디올 및/또는 알콜을 포함하는 고밀도 유체를사용한 기판의 처리
JP2007536730A (ja) 集積回路製品を製造する間にパターン形成されたウエハーを乾燥させるための組成物及び方法
US20070129273A1 (en) In situ fluoride ion-generating compositions and uses thereof
HK1103756A (en) Removal of mems sacrificial layers using supercritical fluid/chemical formulations
JP2004088095A (ja) 洗浄方法
Hess et al. Dependence of Photoresist and Etch Residue Removal on CO2 Pressure in Alcohol-Based Gas-Expanded Liquids

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071127

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071127

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101202

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101208

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20110928