KR20060121168A - 초임계 유체／화학적 제제를 이용한 ｍｅｍｓ 희생층의제거 - Google Patents

초임계 유체／화학적 제제를 이용한 ｍｅｍｓ 희생층의제거 Download PDF

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Publication number
KR20060121168A
KR20060121168A KR1020067011411A KR20067011411A KR20060121168A KR 20060121168 A KR20060121168 A KR 20060121168A KR 1020067011411 A KR1020067011411 A KR 1020067011411A KR 20067011411 A KR20067011411 A KR 20067011411A KR 20060121168 A KR20060121168 A KR 20060121168A
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KR
South Korea
Prior art keywords
scf
composition
silicon
species
substrate
Prior art date
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Withdrawn
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KR1020067011411A
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English (en)
Korean (ko)
Inventor
마이클 비. 코르젠스키
토마스 에이치. 바움
엘리오도르 지. 젠시우
총잉 쉬
Original Assignee
어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드
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Priority claimed from US10/724,791 external-priority patent/US20050118832A1/en
Application filed by 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 filed Critical 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드
Publication of KR20060121168A publication Critical patent/KR20060121168A/ko
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/80—Cleaning only by supercritical fluids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00468—Releasing structures
    • B81C1/00476—Releasing structures removing a sacrificial layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/262—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by physical means only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Micromachines (AREA)
KR1020067011411A 2003-12-01 2004-11-30 초임계 유체／화학적 제제를 이용한 ｍｅｍｓ 희생층의제거 Withdrawn KR20060121168A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/724,791 2003-12-01
US10/724,791 US20050118832A1 (en) 2003-12-01 2003-12-01 Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
US10/782,355 US7160815B2 (en) 2003-12-01 2004-02-19 Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
US10/782,355 2004-02-19

Publications (1)

Publication Number Publication Date
KR20060121168A true KR20060121168A (ko) 2006-11-28

Family

ID=34657407

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067011411A Withdrawn KR20060121168A (ko) 2003-12-01 2004-11-30 초임계 유체／화학적 제제를 이용한 ｍｅｍｓ 희생층의제거

Country Status (6)

Country Link
US (1) US7517809B2 (https=)
EP (1) EP1689825A4 (https=)
JP (1) JP2007513522A (https=)
KR (1) KR20060121168A (https=)
CA (1) CA2589168A1 (https=)
WO (1) WO2005054405A1 (https=)

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KR20160000388A (ko) * 2014-06-23 2016-01-04 삼성전자주식회사 금속 에천트 조성물 및 이를 이용한 반도체 장치의 제조 방법

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JP4464125B2 (ja) * 2003-12-22 2010-05-19 ソニー株式会社 構造体の作製方法及びシリコン酸化膜エッチング剤
US20050227482A1 (en) * 2004-03-24 2005-10-13 Korzenski Michael B Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers
KR101255691B1 (ko) * 2004-07-29 2013-04-17 퀄컴 엠이엠에스 테크놀로지스, 인크. 간섭 변조기의 미소기전 동작을 위한 시스템 및 방법
EP1879704A2 (en) * 2005-04-15 2008-01-23 Advanced Technology Materials, Inc. Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
WO2006124201A2 (en) * 2005-05-13 2006-11-23 Sachem, Inc. Selective wet etching of oxides
CN101228092A (zh) 2005-07-22 2008-07-23 高通股份有限公司 用于mems装置的支撑结构及其方法
EP2495212A3 (en) * 2005-07-22 2012-10-31 QUALCOMM MEMS Technologies, Inc. Mems devices having support structures and methods of fabricating the same
US7795061B2 (en) * 2005-12-29 2010-09-14 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US7382515B2 (en) 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US7450295B2 (en) * 2006-03-02 2008-11-11 Qualcomm Mems Technologies, Inc. Methods for producing MEMS with protective coatings using multi-component sacrificial layers
KR100768121B1 (ko) * 2006-05-23 2007-10-18 경희대학교 산학협력단 초임계 추출용 계면활성제, 그 제조방법 및 상기계면활성제를 이용한 초임계추출방법
US7763546B2 (en) * 2006-08-02 2010-07-27 Qualcomm Mems Technologies, Inc. Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
US20080125342A1 (en) * 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
US7733552B2 (en) 2007-03-21 2010-06-08 Qualcomm Mems Technologies, Inc MEMS cavity-coating layers and methods
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US7569488B2 (en) * 2007-06-22 2009-08-04 Qualcomm Mems Technologies, Inc. Methods of making a MEMS device by monitoring a process parameter
JP5279301B2 (ja) * 2008-03-05 2013-09-04 ステラケミファ株式会社 微細加工処理剤、及び微細加工処理方法
US7851239B2 (en) 2008-06-05 2010-12-14 Qualcomm Mems Technologies, Inc. Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices
US7864403B2 (en) * 2009-03-27 2011-01-04 Qualcomm Mems Technologies, Inc. Post-release adjustment of interferometric modulator reflectivity
WO2010134184A1 (ja) 2009-05-21 2010-11-25 ステラケミファ株式会社 微細加工処理剤、及び微細加工処理方法
US8101561B2 (en) 2009-11-17 2012-01-24 Wai Mun Lee Composition and method for treating semiconductor substrate surface
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
US9663356B2 (en) 2014-06-18 2017-05-30 Nxp Usa, Inc. Etch release residue removal using anhydrous solution
KR102675057B1 (ko) * 2019-10-29 2024-06-12 오씨아이 주식회사 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법

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JPH07109825B2 (ja) * 1992-01-13 1995-11-22 富士通株式会社 半導体基板表面もしくは薄膜表面のドライ洗浄法
US6149828A (en) * 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US6500605B1 (en) * 1997-05-27 2002-12-31 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process
US6306564B1 (en) * 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US5789505A (en) 1997-08-14 1998-08-04 Air Products And Chemicals, Inc. Surfactants for use in liquid/supercritical CO2
US7099065B2 (en) * 2000-08-03 2006-08-29 Reflectivity, Inc. Micromirrors with OFF-angle electrodes and stops
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US6521466B1 (en) * 2002-04-17 2003-02-18 Paul Castrucci Apparatus and method for semiconductor wafer test yield enhancement
US6669785B2 (en) 2002-05-15 2003-12-30 Micell Technologies, Inc. Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide
US6989358B2 (en) 2002-10-31 2006-01-24 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for removal of photoresists
US7485611B2 (en) 2002-10-31 2009-02-03 Advanced Technology Materials, Inc. Supercritical fluid-based cleaning compositions and methods
US6943139B2 (en) 2002-10-31 2005-09-13 Advanced Technology Materials, Inc. Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations
US7119052B2 (en) 2003-06-24 2006-10-10 Advanced Technology Materials, Inc. Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers
US20050118832A1 (en) 2003-12-01 2005-06-02 Korzenski Michael B. Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160000388A (ko) * 2014-06-23 2016-01-04 삼성전자주식회사 금속 에천트 조성물 및 이를 이용한 반도체 장치의 제조 방법

Also Published As

Publication number Publication date
US20070111533A1 (en) 2007-05-17
JP2007513522A (ja) 2007-05-24
US7517809B2 (en) 2009-04-14
EP1689825A4 (en) 2008-09-24
CA2589168A1 (en) 2005-06-16
WO2005054405A1 (en) 2005-06-16
EP1689825A1 (en) 2006-08-16

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