JP2010521065A5 - - Google Patents

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JP2010521065A5
JP2010521065A5 JP2009552709A JP2009552709A JP2010521065A5 JP 2010521065 A5 JP2010521065 A5 JP 2010521065A5 JP 2009552709 A JP2009552709 A JP 2009552709A JP 2009552709 A JP2009552709 A JP 2009552709A JP 2010521065 A5 JP2010521065 A5 JP 2010521065A5
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nitride
layer
intermediate layer
semiconductor structure
semiconductor material
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JP2009552709A
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JP5520056B2 (ja
JP2010521065A (ja
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JP2009552709A 2007-03-09 2008-03-04 中間層構造を有する窒化物半導体構造、及び中間層構造を有する窒化物半導体構造を製造する方法 Active JP5520056B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/716,317 2007-03-09
US11/716,317 US7825432B2 (en) 2007-03-09 2007-03-09 Nitride semiconductor structures with interlayer structures
PCT/US2008/002848 WO2008112097A2 (en) 2007-03-09 2008-03-04 Nitride semiconductor structures with interlayer structures and methods of fabricating nitride semiconductor structures with interlayer structures

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JP2010521065A JP2010521065A (ja) 2010-06-17
JP2010521065A5 true JP2010521065A5 (enExample) 2012-07-12
JP5520056B2 JP5520056B2 (ja) 2014-06-11

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JP2009552709A Active JP5520056B2 (ja) 2007-03-09 2008-03-04 中間層構造を有する窒化物半導体構造、及び中間層構造を有する窒化物半導体構造を製造する方法

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US (2) US7825432B2 (enExample)
EP (1) EP2064730B1 (enExample)
JP (1) JP5520056B2 (enExample)
CN (1) CN101627458B (enExample)
WO (1) WO2008112097A2 (enExample)

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