JP6781095B2 - 化合物半導体基板 - Google Patents
化合物半導体基板 Download PDFInfo
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- JP6781095B2 JP6781095B2 JP2017071662A JP2017071662A JP6781095B2 JP 6781095 B2 JP6781095 B2 JP 6781095B2 JP 2017071662 A JP2017071662 A JP 2017071662A JP 2017071662 A JP2017071662 A JP 2017071662A JP 6781095 B2 JP6781095 B2 JP 6781095B2
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- 239000004065 semiconductor Substances 0.000 title claims description 137
- 239000000758 substrate Substances 0.000 title claims description 93
- 150000001875 compounds Chemical class 0.000 title claims description 51
- 150000004767 nitrides Chemical class 0.000 claims description 77
- 239000002131 composite material Substances 0.000 claims description 41
- 239000000203 mixture Substances 0.000 claims description 27
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- 230000007423 decrease Effects 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 150000001721 carbon Chemical group 0.000 claims description 5
- 230000004888 barrier function Effects 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 description 144
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 79
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 73
- 229910010271 silicon carbide Inorganic materials 0.000 description 36
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 31
- 238000000034 method Methods 0.000 description 15
- 230000004048 modification Effects 0.000 description 12
- 238000012986 modification Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 10
- 239000013078 crystal Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 230000006835 compression Effects 0.000 description 5
- 238000007906 compression Methods 0.000 description 5
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000700 radioactive tracer Substances 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 238000010000 carbonizing Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- -1 CS10 Compound Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
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Description
複合層5中に2層のAlN層52aおよび52bが存在しているので、上層のGaN層51bおよび51c、ならびにGaN層7に対して圧縮歪みを与える効果が大きくなる。その結果、Si基板1の反りの発生を抑止することができ、C−GaN層51a、51b、および51c、ならびにGaN層7へのクラックの発生を抑止することができる。
2 SiC(炭化ケイ素)層
3 AlN(窒化アルミニウム)バッファー層
4,10 Al(アルミニウム)窒化物半導体層
4a,4b AlGaN(窒化アルミニウムガリウム)層
5 複合層
7 GaN(窒化ガリウム)層
21 ガラス板
22 銅板
23 電極
24 カーブトレーサー
41 Al0.75Ga0.25N層
42 Al0.5Ga0.5N層
43 Al0.25Ga0.75N層
44 AlN中間層
51a,51b,51c,105 C(炭素)−GaN層
52a,52b AlN層
CS,CS1,CS2,CS10 化合物半導体基板
Claims (7)
- SiC層と、
前記SiC層上に形成されたAlNよりなるバッファー層と、
前記バッファー層上に形成された、Alを含む窒化物半導体層と、
前記窒化物半導体層上に形成された複合層と、
前記複合層上に形成されたGaNよりなる電子走行層と、
前記電子走行層上に形成された障壁層とを備え、
前記複合層は、上下方向に積層され、炭素を含むGaNよりなる複数の第1の層と、前記複数の第1の層の各々の間に形成されたAlNよりなる第2の層とを含み、
前記複数の第1の層の各々は、550nm以上2000nm以下の厚さを有する、化合物半導体基板。 - 前記複数の第1の層の各々は、1×1018個/cm3以上1×1021個/cm3以下の平均炭素原子濃度を有する、請求項1に記載の化合物半導体基板。
- 前記第2の層は、10nm以上15nm以下の厚さを有する、請求項1または2に記載の化合物半導体基板。
- 前記窒化物半導体層の内部におけるAlの組成比は、下部から上部に向かうに従って減少する、請求項1〜3のいずれかに記載の化合物半導体基板。
- 前記窒化物半導体層は、
AlおよびGaを含む第1の窒化物半導体層と、
前記第1の窒化物半導体層に接触して前記第1の窒化物半導体層上に形成された、Alを含む第2の窒化物半導体層と、
前記第2の窒化物半導体層に接触して前記第2の窒化物半導体層上に形成された、AlおよびGaを含む第3の窒化物半導体層とを含み、
前記第1および前記第3の窒化物半導体層のうち少なくともいずれか一方の層の内部におけるAlの組成比は、下部から上部に向かうに従って減少する、請求項1〜3のいずれかに記載の化合物半導体基板。 - 前記複数の第1の層のうち前記第2の層上に形成された第1の層は、圧縮歪みを含む、請求項1〜5のいずれかに記載の化合物半導体基板。
- 前記窒化物半導体層は、900nm以上2μm以下の厚さを有する、請求項1〜6のいずれかに記載の化合物半導体基板。
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