JP2010226072A - 半導体光検出素子 - Google Patents
半導体光検出素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 266
- 239000000758 substrate Substances 0.000 claims abstract description 175
- 238000009825 accumulation Methods 0.000 claims abstract description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 53
- 239000010703 silicon Substances 0.000 claims abstract description 53
- 239000012535 impurity Substances 0.000 claims abstract description 21
- 230000001788 irregular Effects 0.000 claims description 65
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 230000035945 sensitivity Effects 0.000 abstract description 50
- 230000003595 spectral effect Effects 0.000 abstract description 39
- 238000004519 manufacturing process Methods 0.000 description 38
- 239000000969 carrier Substances 0.000 description 18
- 238000001514 detection method Methods 0.000 description 14
- 230000001678 irradiating effect Effects 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 238000003384 imaging method Methods 0.000 description 10
- 230000004048 modification Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 10
- 238000002161 passivation Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
【解決手段】半導体光検出素子SPは、第1導電型の半導体からなり、互いに対向する第1主面21a及び第2主面21bを有すると共に第1主面21a側に第2導電型の半導体層23が形成されたシリコン基板21と、第1主面21a上に設けられ、発生した電荷を転送する電荷転送電極25と、を備えている。シリコン基板21には、第2主面21b側にシリコン基板21よりも高い不純物濃度を有する第1導電型のアキュムレーション層31が形成されていると共に、第2主面21bにおける少なくとも半導体領域23に対向する領域に不規則な凹凸10が形成されている。シリコン基板21の第2主面21bにおける不規則な凹凸10が形成された領域は、光学的に露出している。
【選択図】図26
Description
図1〜図10を参照して、第1実施形態に係るフォトダイオードの製造方法について説明する。図1〜図10は、第1実施形態に係るフォトダイオードの製造方法を説明するための図である。
図14〜図16を参照して、第2実施形態に係るフォトダイオードの製造方法について説明する。図14〜図16は、第2実施形態に係るフォトダイオードの製造方法を説明するための図である。
図17〜図21を参照して、第3実施形態に係るフォトダイオードの製造方法について説明する。図17〜図21は、第3実施形態に係るフォトダイオードの製造方法を説明するための図である。
図22〜図24を参照して、第4実施形態に係るフォトダイオードの製造方法について説明する。図22〜図24は、第4実施形態に係るフォトダイオードの製造方法を説明するための図である。
図25〜図26を参照して、第5実施形態に係る半導体光検出素子SP1について説明する。図25は、第5実施形態に係る半導体光検出素子を示す斜視図である。図26は、第5実施形態に係る半導体光検出素子の断面構成を説明するための図である。
Claims (8)
- 第1導電型の半導体からなり、互いに対向する第1主面及び第2主面を有すると共に前記第1主面側に第2導電型の半導体領域が形成されたシリコン基板と、
前記シリコン基板の前記第1主面上に設けられ、発生した電荷を転送する転送電極部と、を備え、
前記シリコン基板には、前記第2主面側に前記シリコン基板よりも高い不純物濃度を有する第1導電型のアキュムレーション層が形成されていると共に、前記第2主面における少なくとも第2導電型の前記半導体領域に対向する領域に不規則な凹凸が形成されており、
前記シリコン基板の前記第2主面における不規則な前記凹凸が形成された領域は、光学的に露出していることを特徴とする半導体光検出素子。 - 第2導電型の前記半導体領域に対向する前記領域のうち一部の領域に、不規則な前記凹凸が形成されていることを特徴とする請求項1に記載の半導体光検出素子。
- 前記シリコン基板は、第2導電型の前記半導体領域に対応する部分が該部分の周辺部分を残して前記第2主面側より薄化されていることを特徴とする請求項1又は2に記載の半導体光検出素子。
- 第1導電型の前記アキュムレーション層の厚みが、不規則な前記凹凸の高低差よりも大きいことを特徴とする請求項1〜3のいずれか一項に記載の半導体光検出素子。
- 前記シリコン基板は、その厚みが画素ピッチ以下に設定されていることを特徴とする請求項1〜4のいずれか一項に記載の半導体光検出素子。
- 第1導電型の半導体からなり、互いに対向する第1主面及び第2主面を有すると共に前記第1主面側に第2導電型の半導体領域が形成されたシリコン基板を備え、
前記シリコン基板には、前記第2主面側に前記シリコン基板よりも高い不純物濃度を有する第1導電型のアキュムレーション層が形成されていると共に、前記第2主面における少なくとも第2導電型の前記半導体領域に対向する領域に不規則な凹凸が形成されており、
前記シリコン基板の前記第2主面における第2導電型の前記半導体領域に対向する前記領域は、光学的に露出していることを特徴とするフォトダイオード。 - 前記シリコン基板は、第2導電型の前記半導体領域に対応する部分が該部分の周辺部分を残して前記第2主面側より薄化されていることを特徴とする請求項6に記載のフォトダイオード。
- 第1導電型の前記アキュムレーション層の厚みが、不規則な前記凹凸の高低差よりも大きいことを特徴とする請求項6又は7に記載のフォトダイオード。
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009136408A JP5185206B2 (ja) | 2009-02-24 | 2009-06-05 | 半導体光検出素子 |
KR1020177002558A KR101799249B1 (ko) | 2009-02-24 | 2010-02-09 | 반도체 광 검출 소자 |
CN201410320086.6A CN104064621B (zh) | 2009-02-24 | 2010-02-09 | 半导体光检测元件 |
KR1020117013132A KR101715957B1 (ko) | 2009-02-24 | 2010-02-09 | 반도체 광 검출 소자 |
US13/143,765 US8629485B2 (en) | 2009-02-24 | 2010-02-09 | Semiconductor photodetection element |
PCT/JP2010/051870 WO2010098201A1 (ja) | 2009-02-24 | 2010-02-09 | 半導体光検出素子 |
EP10746082.6A EP2403009B1 (en) | 2009-02-24 | 2010-02-09 | Semiconductor photodetection element |
CN201080008816.9A CN102326264B (zh) | 2009-02-24 | 2010-02-09 | 半导体光检测元件 |
TW099105016A TWI501387B (zh) | 2009-02-24 | 2010-02-22 | Semiconductor photodetection element |
TW104102778A TWI617013B (zh) | 2009-02-24 | 2010-02-22 | 半導體光檢知元件及光電二極體 |
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JP2009041078 | 2009-02-24 | ||
JP2009041078 | 2009-02-24 | ||
JP2009136408A JP5185206B2 (ja) | 2009-02-24 | 2009-06-05 | 半導体光検出素子 |
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JP2013006062A Division JP5805679B2 (ja) | 2009-02-24 | 2013-01-17 | 半導体光検出素子 |
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JP2010226072A true JP2010226072A (ja) | 2010-10-07 |
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US (1) | US8629485B2 (ja) |
EP (1) | EP2403009B1 (ja) |
JP (1) | JP5185206B2 (ja) |
KR (2) | KR101715957B1 (ja) |
CN (2) | CN102326264B (ja) |
TW (2) | TWI501387B (ja) |
WO (1) | WO2010098201A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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JP2016197733A (ja) * | 2009-09-17 | 2016-11-24 | サイオニクス、エルエルシー | 感光撮像素子および関連方法 |
JP2020068264A (ja) * | 2018-10-23 | 2020-04-30 | 旭化成エレクトロニクス株式会社 | 光デバイス |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
WO2010028177A1 (en) * | 2008-09-03 | 2010-03-11 | Sionyx, Inc. | High sensitivity photodetectors, imaging arrays, and high efficiency photovoltaic devices produced using ion implantation and femtosecond laser irradiation |
US7745901B1 (en) | 2009-01-29 | 2010-06-29 | Sionyx, Inc. | Highly-depleted laser doped semiconductor volume |
JP5185205B2 (ja) | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
JP5829224B2 (ja) * | 2009-02-24 | 2015-12-09 | 浜松ホトニクス株式会社 | Mosイメージセンサ |
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JP5185207B2 (ja) | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
US8207051B2 (en) | 2009-04-28 | 2012-06-26 | Sionyx, Inc. | Semiconductor surface modification |
US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
WO2011160130A2 (en) | 2010-06-18 | 2011-12-22 | Sionyx, Inc | High speed photosensitive devices and associated methods |
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US8698084B2 (en) | 2011-03-10 | 2014-04-15 | Sionyx, Inc. | Three dimensional sensors, systems, and associated methods |
US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
EP2732402A2 (en) | 2011-07-13 | 2014-05-21 | Sionyx, Inc. | Biometric imaging devices and associated methods |
US8865507B2 (en) | 2011-09-16 | 2014-10-21 | Sionyx, Inc. | Integrated visible and infrared imager devices and associated methods |
US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
TW201405792A (zh) * | 2012-07-30 | 2014-02-01 | Sony Corp | 固體攝像裝置、固體攝像裝置之製造方法及電子機器 |
KR20150130303A (ko) | 2013-02-15 | 2015-11-23 | 사이오닉스, 아이엔씨. | 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서 |
US9939251B2 (en) | 2013-03-15 | 2018-04-10 | Sionyx, Llc | Three dimensional imaging utilizing stacked imager devices and associated methods |
US9209345B2 (en) | 2013-06-29 | 2015-12-08 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
US9876127B2 (en) * | 2013-11-22 | 2018-01-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside-illuminated photodetector structure and method of making the same |
JP2016062996A (ja) | 2014-09-16 | 2016-04-25 | 株式会社東芝 | 光検出器 |
JP6738129B2 (ja) | 2015-07-28 | 2020-08-12 | 株式会社東芝 | 光検出器およびこれを用いたライダー装置 |
CN106684203B (zh) * | 2015-11-09 | 2018-04-27 | 中蕊(武汉)光电科技有限公司 | 一种镓氮雪崩光电二极管组件及其制作方法 |
JP6730820B2 (ja) * | 2016-03-10 | 2020-07-29 | 株式会社東芝 | 光検出器およびこれを用いたライダー装置 |
KR102470226B1 (ko) | 2016-04-12 | 2022-11-23 | 엘지이노텍 주식회사 | 반도체 소자 |
JP6639427B2 (ja) | 2017-01-13 | 2020-02-05 | 株式会社東芝 | 受光装置 |
JP2018156984A (ja) | 2017-03-15 | 2018-10-04 | 株式会社東芝 | 光検出素子 |
JP2019012826A (ja) * | 2017-06-30 | 2019-01-24 | 国立研究開発法人物質・材料研究機構 | ガリウム窒化物半導体基板、ガリウム窒化物半導体装置、撮像素子およびそれらの製造方法 |
US10475834B1 (en) * | 2017-10-06 | 2019-11-12 | Facebook Technologies, Llc | Apparatuses, systems, and methods for disrupting light at a back-side of an image sensor array |
EP3664162A1 (en) * | 2017-11-15 | 2020-06-10 | Kaneka Corporation | Photoelectric conversion element and photoelectric conversion device |
EP3664161A1 (en) * | 2017-11-15 | 2020-06-10 | Kaneka Corporation | Photoelectric conversion device |
JP7089930B2 (ja) * | 2018-04-16 | 2022-06-23 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
JP7148261B2 (ja) | 2018-04-16 | 2022-10-05 | 浜松ホトニクス株式会社 | 裏面入射型半導体光検出素子 |
EP3998476A4 (en) * | 2019-07-10 | 2023-08-09 | Hamamatsu Photonics K.K. | SEMICONDUCTOR DEVICE INSPECTION METHOD AND SEMICONDUCTOR DEVICE INSPECTION DEVICE |
JP7502866B2 (ja) * | 2020-01-21 | 2024-06-19 | 浜松ホトニクス株式会社 | 裏面入射型固体撮像装置の製造方法 |
CN114975672A (zh) * | 2021-02-26 | 2022-08-30 | 中国科学院半导体研究所 | 背入射近红外增强硅雪崩光电探测器的结构及制备方法 |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50147230A (ja) * | 1974-05-15 | 1975-11-26 | ||
JPS5961973A (ja) * | 1982-09-27 | 1984-04-09 | ア−ルシ−エ− コ−ポレ−ション | 光検知器 |
JPS59224183A (ja) * | 1983-06-03 | 1984-12-17 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JPS6218075A (ja) * | 1985-07-17 | 1987-01-27 | Agency Of Ind Science & Technol | 光電変換装置 |
JPH04116870A (ja) * | 1990-09-06 | 1992-04-17 | Fujitsu Ltd | 受光素子の製造方法 |
JPH05243600A (ja) * | 1992-02-28 | 1993-09-21 | Toshiba Corp | 半導体受光素子 |
JPH06350068A (ja) * | 1993-06-03 | 1994-12-22 | Hamamatsu Photonics Kk | 半導体エネルギー線検出器の製造方法 |
JPH07235658A (ja) * | 1994-02-22 | 1995-09-05 | Sony Corp | 固体撮像装置及びそのセンサ構造の形成方法 |
JPH10173998A (ja) * | 1996-12-16 | 1998-06-26 | Nec Corp | ショットキー障壁型固体撮像素子およびこれを用いた撮像装置 |
JPH10335624A (ja) * | 1997-06-05 | 1998-12-18 | Hamamatsu Photonics Kk | 裏面照射型受光デバイス及びその製造方法 |
WO2000062344A1 (fr) * | 1999-04-13 | 2000-10-19 | Hamamatsu Photonics K.K. | Dispositif à semiconducteur |
JP2002231993A (ja) * | 2001-02-05 | 2002-08-16 | Toshiba Corp | 半導体受光装置および半導体受光装置を備えた電気機器 |
JP2005045073A (ja) * | 2003-07-23 | 2005-02-17 | Hamamatsu Photonics Kk | 裏面入射型光検出素子 |
JP2008515196A (ja) * | 2004-09-24 | 2008-05-08 | プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ | 硫黄がドープされたレーザーによってミクロ構造化された表面層を有するシリコンベースの検出器製造方法 |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4072541A (en) * | 1975-11-21 | 1978-02-07 | Communications Satellite Corporation | Radiation hardened P-I-N and N-I-P solar cells |
US4277793A (en) | 1979-07-16 | 1981-07-07 | Rca Corporation | Photodiode having enhanced long wavelength response |
JPS59117274A (ja) | 1982-12-24 | 1984-07-06 | Toshiba Corp | 太陽電池の製造方法 |
JPS6411556A (en) | 1987-07-03 | 1989-01-17 | Teisan Seiyaku Kk | Injury protecting agent |
JP2810435B2 (ja) | 1989-08-31 | 1998-10-15 | シャープ株式会社 | レーザ加工方法 |
JP3133494B2 (ja) | 1992-07-21 | 2001-02-05 | 三洋電機株式会社 | 光起電力素子 |
JP3526308B2 (ja) | 1993-02-18 | 2004-05-10 | 株式会社日立製作所 | 受光素子 |
JPH07240534A (ja) | 1993-03-16 | 1995-09-12 | Seiko Instr Inc | 光電変換半導体装置及びその製造方法 |
JP3091903B2 (ja) | 1994-08-17 | 2000-09-25 | セイコーインスツルメンツ株式会社 | アバランシェ・フォト・ダイオード及びその製造方法 |
US5589704A (en) | 1995-01-27 | 1996-12-31 | Lucent Technologies Inc. | Article comprising a Si-based photodetector |
JPH1070298A (ja) | 1996-08-28 | 1998-03-10 | Nippon Telegr & Teleph Corp <Ntt> | 太陽電池およびその製造方法 |
CN1139997C (zh) | 1997-03-21 | 2004-02-25 | 三洋电机株式会社 | 光电器件及其制造方法 |
US6951689B1 (en) * | 1998-01-21 | 2005-10-04 | Canon Kabushiki Kaisha | Substrate with transparent conductive layer, and photovoltaic element |
JP3582569B2 (ja) | 1998-02-10 | 2004-10-27 | 三菱住友シリコン株式会社 | シリコンウェーハの裏面ゲッタリング処理方法 |
JP3174549B2 (ja) * | 1998-02-26 | 2001-06-11 | 株式会社日立製作所 | 太陽光発電装置及び太陽光発電モジュール並びに太陽光発電システムの設置方法 |
JP2000299489A (ja) | 1999-04-15 | 2000-10-24 | Hamamatsu Photonics Kk | 光電変換素子及び光受信器 |
US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
JP4012743B2 (ja) | 2002-02-12 | 2007-11-21 | 浜松ホトニクス株式会社 | 光検出装置 |
JP2003258285A (ja) | 2002-02-27 | 2003-09-12 | Sharp Corp | 表面凹凸構造の作製方法及び太陽電池 |
JP4075410B2 (ja) | 2002-03-01 | 2008-04-16 | 三菱電機株式会社 | 太陽電池 |
DE10392637B4 (de) | 2002-05-10 | 2014-09-04 | Hamamatsu Photonics K.K. | Hintergrundbeleuchtetes Photodioden-Array und Verfahren zum Herstellen desselben |
JP4228887B2 (ja) * | 2003-04-02 | 2009-02-25 | ソニー株式会社 | 固体撮像素子およびその製造方法 |
JP4373695B2 (ja) | 2003-04-16 | 2009-11-25 | 浜松ホトニクス株式会社 | 裏面照射型光検出装置の製造方法 |
JP4499386B2 (ja) | 2003-07-29 | 2010-07-07 | 浜松ホトニクス株式会社 | 裏面入射型光検出素子の製造方法 |
JP4841834B2 (ja) | 2004-12-24 | 2011-12-21 | 浜松ホトニクス株式会社 | ホトダイオードアレイ |
JP4766880B2 (ja) | 2005-01-18 | 2011-09-07 | シャープ株式会社 | 結晶シリコンウエハ、結晶シリコン太陽電池、結晶シリコンウエハの製造方法および結晶シリコン太陽電池の製造方法 |
JP5289764B2 (ja) | 2005-05-11 | 2013-09-11 | 三菱電機株式会社 | 太陽電池およびその製造方法 |
KR100660714B1 (ko) * | 2005-12-29 | 2006-12-21 | 매그나칩 반도체 유한회사 | 백사이드 조명 구조의 씨모스 이미지 센서 및 그의 제조방법 |
CN101484999B (zh) | 2006-07-03 | 2011-09-14 | 浜松光子学株式会社 | 光电二极管阵列 |
JP2008153311A (ja) | 2006-12-14 | 2008-07-03 | Sumitomo Electric Ind Ltd | 半導体受光素子、視界支援装置および生体医療装置 |
TWI436474B (zh) | 2007-05-07 | 2014-05-01 | Sony Corp | A solid-state image pickup apparatus, a manufacturing method thereof, and an image pickup apparatus |
JP5286046B2 (ja) | 2007-11-30 | 2013-09-11 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
JP5185208B2 (ja) | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | フォトダイオード及びフォトダイオードアレイ |
JP5185207B2 (ja) | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
JP5185205B2 (ja) * | 2009-02-24 | 2013-04-17 | 浜松ホトニクス株式会社 | 半導体光検出素子 |
JP2010283223A (ja) | 2009-06-05 | 2010-12-16 | Hamamatsu Photonics Kk | 半導体光検出素子及び半導体光検出素子の製造方法 |
-
2009
- 2009-06-05 JP JP2009136408A patent/JP5185206B2/ja active Active
-
2010
- 2010-02-09 KR KR1020117013132A patent/KR101715957B1/ko active IP Right Grant
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- 2010-02-09 EP EP10746082.6A patent/EP2403009B1/en active Active
- 2010-02-09 US US13/143,765 patent/US8629485B2/en active Active
- 2010-02-09 CN CN201410320086.6A patent/CN104064621B/zh active Active
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- 2010-02-22 TW TW099105016A patent/TWI501387B/zh active
- 2010-02-22 TW TW104102778A patent/TWI617013B/zh active
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50147230A (ja) * | 1974-05-15 | 1975-11-26 | ||
JPS5961973A (ja) * | 1982-09-27 | 1984-04-09 | ア−ルシ−エ− コ−ポレ−ション | 光検知器 |
JPS59224183A (ja) * | 1983-06-03 | 1984-12-17 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JPS6218075A (ja) * | 1985-07-17 | 1987-01-27 | Agency Of Ind Science & Technol | 光電変換装置 |
JPH04116870A (ja) * | 1990-09-06 | 1992-04-17 | Fujitsu Ltd | 受光素子の製造方法 |
JPH05243600A (ja) * | 1992-02-28 | 1993-09-21 | Toshiba Corp | 半導体受光素子 |
JPH06350068A (ja) * | 1993-06-03 | 1994-12-22 | Hamamatsu Photonics Kk | 半導体エネルギー線検出器の製造方法 |
JPH07235658A (ja) * | 1994-02-22 | 1995-09-05 | Sony Corp | 固体撮像装置及びそのセンサ構造の形成方法 |
JPH10173998A (ja) * | 1996-12-16 | 1998-06-26 | Nec Corp | ショットキー障壁型固体撮像素子およびこれを用いた撮像装置 |
JPH10335624A (ja) * | 1997-06-05 | 1998-12-18 | Hamamatsu Photonics Kk | 裏面照射型受光デバイス及びその製造方法 |
WO2000062344A1 (fr) * | 1999-04-13 | 2000-10-19 | Hamamatsu Photonics K.K. | Dispositif à semiconducteur |
JP2002231993A (ja) * | 2001-02-05 | 2002-08-16 | Toshiba Corp | 半導体受光装置および半導体受光装置を備えた電気機器 |
JP2005045073A (ja) * | 2003-07-23 | 2005-02-17 | Hamamatsu Photonics Kk | 裏面入射型光検出素子 |
JP2008515196A (ja) * | 2004-09-24 | 2008-05-08 | プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ | 硫黄がドープされたレーザーによってミクロ構造化された表面層を有するシリコンベースの検出器製造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016197733A (ja) * | 2009-09-17 | 2016-11-24 | サイオニクス、エルエルシー | 感光撮像素子および関連方法 |
WO2011118808A1 (ja) | 2010-03-26 | 2011-09-29 | 千代田化工建設株式会社 | 難分解性物質を含む排水の処理方法 |
JP2020068264A (ja) * | 2018-10-23 | 2020-04-30 | 旭化成エレクトロニクス株式会社 | 光デバイス |
JP7368081B2 (ja) | 2018-10-23 | 2023-10-24 | 旭化成エレクトロニクス株式会社 | 光デバイス |
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KR101799249B1 (ko) | 2017-11-17 |
EP2403009A4 (en) | 2013-03-27 |
TW201523845A (zh) | 2015-06-16 |
CN102326264A (zh) | 2012-01-18 |
KR101715957B1 (ko) | 2017-03-13 |
TWI617013B (zh) | 2018-03-01 |
EP2403009A1 (en) | 2012-01-04 |
WO2010098201A1 (ja) | 2010-09-02 |
CN104064621A (zh) | 2014-09-24 |
KR20110128789A (ko) | 2011-11-30 |
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US8629485B2 (en) | 2014-01-14 |
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TW201112408A (en) | 2011-04-01 |
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