JP2010192693A - 半導体装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000009792 diffusion process Methods 0.000 claims abstract description 147
- 125000006850 spacer group Chemical group 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 13
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- 239000012535 impurity Substances 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 7
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- 238000002955 isolation Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】本発明の半導体装置では、ドレイン領域としてのN型の拡散層9にP型の拡散層14及びドレイン導出領域としてのN型の拡散層10が形成される。そして、P型の拡散層14は、MOSトランジスタ1のソース−ドレイン領域間に配置される。この構造により、ドレイン電極28に正のESDサージが印加され、寄生Tr1のオン電流I1が流れた場合にも、寄生Tr1のオン電流I1の電流経路がエピタキシャル層深部側となることで、MOSトランジスタ1の熱破壊が防止される。
【選択図】図1
Description
2 P型の単結晶シリコン基板
3 エピタキシャル層
10 N型の拡散層
14 P型の拡散層
15 PN接合領域
Claims (7)
- 一導電型の半導体層と、
前記半導体層に形成された一導電型のドレイン拡散層と、
前記半導体層に形成された逆導電型のバックゲート拡散層と、
前記バックゲート拡散層に重畳して形成された一導電型のソース拡散層とを有し、
前記ドレイン拡散層には逆導電型の拡散層が重畳して形成され、前記逆導電型の拡散層は、少なくとも前記ドレイン拡散層へのコンタクト領域よりも前記バックゲート拡散層側へ配置されることを特徴とする半導体装置。 - 前記ドレイン拡散層は、低濃度の第1の拡散層に高濃度の第2の拡散層が重畳して形成され、前記コンタクト領域は前記高濃度の第2の拡散層上に形成され、
前記逆導電型の拡散層は、前記低濃度の第1の拡散層よりも高濃度な領域であり、前記高濃度の第2の拡散層よりも前記バックゲート拡散層側へ配置されることを特徴とする請求項1に記載の半導体装置。 - 前記逆導電型の拡散層は、前記高濃度の第2の拡散層とPN接合領域を形成することを特徴とする請求項2に記載の半導体装置。
- 前記半導体層上にはゲート電極が形成され、前記ゲート電極の側壁には絶縁スペーサー膜が形成され、
前記逆導電型の拡散層は、少なくとも前記ドレイン拡散層上に位置する前記ゲート電極の端部及び前記絶縁スペーサー膜の下方に配置されることを特徴とする請求項1から請求項3のいずれか1項に記載の半導体装置。 - 前記一導電型の半導体層は、逆導電型の半導体基板に形成されることを特徴とする請求項1または請求項2に記載の半導体装置。
- 半導体層に一導電型のドレイン拡散層、逆導電型のバックゲート拡散層、一導電型のソース拡散層を形成し、前記半導体層上にゲート電極を形成し、前記ゲート電極の側壁に絶縁スペーサー膜を形成する半導体装置の製造方法において、
前記ゲート電極をマスクの一部として用い前記ドレイン拡散層に重畳するように逆導電型の拡散層を形成した後、前記ゲート電極の側壁に絶縁スペーサー膜を形成することを特徴とする半導体装置の製造方法。 - 前記半導体層に前記ドレイン拡散層を構成する低濃度の第1の拡散層を形成し、前記半導体層上にゲート電極を形成し、前記ゲート電極をマスクの一部として用い前記低濃度の第1の拡散層に重畳するように逆導電型の拡散層を形成した後、
前記ゲート電極の側壁に絶縁スペーサー膜を形成し、前記絶縁スペーサー膜をマスクの一部として用い前記低濃度の第1の拡散層に重畳するように前記ドレイン拡散層を構成する高濃度の第2の拡散層を形成することを特徴とする請求項6に記載の半導体装置の製造方法。
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JP2009035645A JP5525736B2 (ja) | 2009-02-18 | 2009-02-18 | 半導体装置及びその製造方法 |
CN201010121457XA CN101807599B (zh) | 2009-02-18 | 2010-02-11 | 半导体装置及其制造方法 |
US12/707,734 US8314458B2 (en) | 2009-02-18 | 2010-02-18 | Semiconductor device and method of manufacturing the same |
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Cited By (3)
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JP2013008715A (ja) * | 2011-06-22 | 2013-01-10 | Semiconductor Components Industries Llc | 半導体装置 |
JP2014011411A (ja) * | 2012-07-03 | 2014-01-20 | Hitachi Ltd | 半導体装置 |
CN116387363A (zh) * | 2023-05-08 | 2023-07-04 | 上海晶岳电子有限公司 | 一种ldmos工艺tvs器件及其制造方法 |
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US9236472B2 (en) | 2012-04-17 | 2016-01-12 | Freescale Semiconductor, Inc. | Semiconductor device with integrated breakdown protection |
US9343455B2 (en) * | 2012-12-19 | 2016-05-17 | Knowles Electronics, Llc | Apparatus and method for high voltage I/O electro-static discharge protection |
JP6656968B2 (ja) * | 2016-03-18 | 2020-03-04 | エイブリック株式会社 | Esd保護素子を有する半導体装置 |
CN106847809B (zh) * | 2017-02-23 | 2018-09-04 | 无锡新硅微电子有限公司 | 用于片上集成的整流桥结构 |
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JP2013008715A (ja) * | 2011-06-22 | 2013-01-10 | Semiconductor Components Industries Llc | 半導体装置 |
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CN116387363B (zh) * | 2023-05-08 | 2024-01-09 | 上海晶岳电子有限公司 | 一种ldmos工艺tvs器件及其制造方法 |
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US20100207197A1 (en) | 2010-08-19 |
US8314458B2 (en) | 2012-11-20 |
CN101807599A (zh) | 2010-08-18 |
CN101807599B (zh) | 2012-05-30 |
JP5525736B2 (ja) | 2014-06-18 |
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