CN106847809B - 用于片上集成的整流桥结构 - Google Patents
用于片上集成的整流桥结构 Download PDFInfo
- Publication number
- CN106847809B CN106847809B CN201710099378.5A CN201710099378A CN106847809B CN 106847809 B CN106847809 B CN 106847809B CN 201710099378 A CN201710099378 A CN 201710099378A CN 106847809 B CN106847809 B CN 106847809B
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- CN
- China
- Prior art keywords
- diode
- rectifier bridge
- guarding
- minority carrier
- dnw
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 6
- 230000004224 protection Effects 0.000 claims description 4
- 230000003071 parasitic effect Effects 0.000 abstract description 25
- 230000000694 effects Effects 0.000 abstract description 5
- 230000010354 integration Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 2
- 230000024241 parasitism Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Rectifiers (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710099378.5A CN106847809B (zh) | 2017-02-23 | 2017-02-23 | 用于片上集成的整流桥结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710099378.5A CN106847809B (zh) | 2017-02-23 | 2017-02-23 | 用于片上集成的整流桥结构 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106847809A CN106847809A (zh) | 2017-06-13 |
CN106847809B true CN106847809B (zh) | 2018-09-04 |
Family
ID=59133533
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710099378.5A Active CN106847809B (zh) | 2017-02-23 | 2017-02-23 | 用于片上集成的整流桥结构 |
Country Status (1)
Country | Link |
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CN (1) | CN106847809B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108631611B (zh) * | 2018-05-28 | 2019-12-20 | 深圳市天毅科技有限公司 | 一种全桥式芯片和电路 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104779194A (zh) * | 2014-01-14 | 2015-07-15 | 北大方正集团有限公司 | 制作pn结隔离结构的方法及pn结隔离结构 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003142492A (ja) * | 2001-10-30 | 2003-05-16 | Sumitomo Chem Co Ltd | 3−5族化合物半導体および半導体装置 |
JP2007294765A (ja) * | 2006-04-26 | 2007-11-08 | Oki Electric Ind Co Ltd | 半導体装置 |
JP5525736B2 (ja) * | 2009-02-18 | 2014-06-18 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置及びその製造方法 |
US8304838B1 (en) * | 2011-08-23 | 2012-11-06 | Amazing Microelectronics Corp. | Electrostatic discharge protection device structure |
CN104716133B (zh) * | 2013-12-17 | 2017-11-17 | 深圳市国微电子有限公司 | 一种基于scr结构耐正负高压的端口esd结构及其等效电路 |
CN104617143A (zh) * | 2015-01-05 | 2015-05-13 | 无锡友达电子有限公司 | 一种减小导通电阻的p型横向双扩散mos管 |
CN206505919U (zh) * | 2017-02-23 | 2017-09-19 | 无锡新硅微电子有限公司 | 用于片上集成的整流桥结构 |
-
2017
- 2017-02-23 CN CN201710099378.5A patent/CN106847809B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104779194A (zh) * | 2014-01-14 | 2015-07-15 | 北大方正集团有限公司 | 制作pn结隔离结构的方法及pn结隔离结构 |
Also Published As
Publication number | Publication date |
---|---|
CN106847809A (zh) | 2017-06-13 |
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Legal Events
Date | Code | Title | Description |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191121 Address after: 211106 No.166 Zhengfang Middle Road, Jiangning Economic and Technological Development Zone, Nanjing City, Jiangsu Province Patentee after: Nanjing GEC Electonics Co., Ltd. Address before: 1204, room 214028, building B, Wang Zhuang hi tech center, 4 Longshan Road, New District, Jiangsu, Wuxi Patentee before: WST (Wuxi) Microelectronic Co., Ltd. |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 210016 No.166, zhengfangzhong Road, moling street, Jiangning District, Nanjing City, Jiangsu Province Patentee after: Nanjing Guobo Electronics Co.,Ltd. Address before: 211106 No.166, Zhengfang Middle Road, Jiangning Economic and Technological Development Zone, Nanjing, Jiangsu Province Patentee before: NANJING GUOBO ELECTRONICS Co.,Ltd. |