JP2008010667A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2008010667A JP2008010667A JP2006180227A JP2006180227A JP2008010667A JP 2008010667 A JP2008010667 A JP 2008010667A JP 2006180227 A JP2006180227 A JP 2006180227A JP 2006180227 A JP2006180227 A JP 2006180227A JP 2008010667 A JP2008010667 A JP 2008010667A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 238000009792 diffusion process Methods 0.000 claims description 33
- 230000015556 catabolic process Effects 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 27
- 239000012535 impurity Substances 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
【解決手段】高耐圧トランジスタ21を備えた内部回路16と、内部回路16を保護する静電保護素子22,23とを備え、静電保護素子22,23の耐圧値の合計の和を高耐圧トランジスタ21の耐圧値と略等しくすると共に、内部回路16と電気的に接続された入出力端子11とグラウンド端子13との間に静電保護素子22,23を直列接続した。
【選択図】図1
Description
図1は、本発明の実施の形態に係る半導体装置の等価回路を示す図である。
11 入出力端子
12 電源端子
13 グラウンド端子
14 抵抗体
16 内部回路
17 第1の静電保護回路
18 第2の静電保護回路
21 高耐圧トランジスタ
22,23 静電保護素子
29 寄生ダイオード
36 低濃度N型拡散層
37−1,37−2 Pウェル層
38−1,38−2 ドレイン領域
39−1,39−2 ソース領域
41−1,41−2 バックゲート給電用領域
42 LOCOS酸化膜
43−1,43−1 ゲート酸化膜
45−1,45−2 ゲート
46 絶縁膜
46A−1〜46C−1,46A−2〜46C−2,46D 開口部
47−1〜49−1,47−2〜49−2,56 電極
53 Nウェル層
54 給電用コンタクト層
55 チャネルストッパー層
D1〜D6 深さ
M1 厚さ
Claims (4)
- 高耐圧トランジスタを有する内部回路と、前記内部回路を保護する静電保護素子とを備えた半導体装置であって、
前記静電保護素子を複数設け、前記複数の静電保護素子の耐圧値の合計の和を前記高耐圧トランジスタの耐圧値と略等しくすると共に、前記内部回路と電気的に接続された入出力端子とグラウンド端子との間に前記複数の静電保護素子を直列接続したことを特徴とする半導体装置。 - 前記静電保護素子は、MOSFET型静電保護素子であることを特徴とする請求項1記載の半導体装置。
- 前記MOSFET型静電保護素子は、第1導電型の半導体基板に形成された第1導電型のウェル層と、前記第1導電型のウェル層に形成された第2導電型のソース領域、第2導電型のドレイン領域、及び第1導電型のバックゲート給電用領域とをそれぞれ備えており、
前記第1導電型の半導体基板と前記第1導電型のウェル層とを電気的に分離する第2導電型の拡散層を前記第1導電型の半導体基板に設けると共に、
前記第2導電型の拡散層の不純物濃度を前記第2導電型のソース領域及び前記第2導電型のドレイン領域の不純物濃度よりも小さくしたことを特徴とする請求項2記載の半導体装置。 - 前記第1導電型の半導体基板をグラウンド電位にし、前記第2導電型の拡散層を電源電位にしたことを特徴とする請求項3記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006180227A JP2008010667A (ja) | 2006-06-29 | 2006-06-29 | 半導体装置 |
KR1020070045934A KR100857835B1 (ko) | 2006-06-29 | 2007-05-11 | 반도체 장치 |
US11/757,448 US7800180B2 (en) | 2006-06-29 | 2007-06-04 | Semiconductor electrostatic protection device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006180227A JP2008010667A (ja) | 2006-06-29 | 2006-06-29 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008010667A true JP2008010667A (ja) | 2008-01-17 |
Family
ID=38875717
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006180227A Pending JP2008010667A (ja) | 2006-06-29 | 2006-06-29 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7800180B2 (ja) |
JP (1) | JP2008010667A (ja) |
KR (1) | KR100857835B1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010045216A (ja) * | 2008-08-13 | 2010-02-25 | Seiko Instruments Inc | 半導体装置 |
JP2011204939A (ja) * | 2010-03-26 | 2011-10-13 | On Semiconductor Trading Ltd | 半導体集積回路 |
JP2014056972A (ja) * | 2012-09-13 | 2014-03-27 | Ricoh Co Ltd | 静電破壊保護回路及び半導体集積回路 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5285373B2 (ja) * | 2008-09-29 | 2013-09-11 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
JP5525736B2 (ja) * | 2009-02-18 | 2014-06-18 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置及びその製造方法 |
US8492866B1 (en) * | 2012-01-09 | 2013-07-23 | International Business Machines Corporation | Isolated Zener diode |
CN103579232A (zh) * | 2012-08-10 | 2014-02-12 | 上海华虹Nec电子有限公司 | 一种平面栅型mos管及其制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05347386A (ja) * | 1992-02-21 | 1993-12-27 | Sony Corp | 半導体装置 |
JP2000200845A (ja) * | 1998-11-04 | 2000-07-18 | Rohm Co Ltd | 半導体増幅回路 |
JP2001339044A (ja) * | 2000-05-26 | 2001-12-07 | Mitsumi Electric Co Ltd | 半導体装置の静電保護回路 |
JP2005142261A (ja) * | 2003-11-05 | 2005-06-02 | Sanyo Electric Co Ltd | 静電破壊保護装置 |
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JP3270364B2 (ja) * | 1997-07-28 | 2002-04-02 | エヌイーシーマイクロシステム株式会社 | 静電保護回路 |
JPH11150235A (ja) | 1997-11-19 | 1999-06-02 | Mitsumi Electric Co Ltd | 静電保護装置 |
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JP4648533B2 (ja) * | 2000-10-30 | 2011-03-09 | Okiセミコンダクタ株式会社 | 半導体装置 |
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2006
- 2006-06-29 JP JP2006180227A patent/JP2008010667A/ja active Pending
-
2007
- 2007-05-11 KR KR1020070045934A patent/KR100857835B1/ko active IP Right Grant
- 2007-06-04 US US11/757,448 patent/US7800180B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05347386A (ja) * | 1992-02-21 | 1993-12-27 | Sony Corp | 半導体装置 |
JP2000200845A (ja) * | 1998-11-04 | 2000-07-18 | Rohm Co Ltd | 半導体増幅回路 |
JP2001339044A (ja) * | 2000-05-26 | 2001-12-07 | Mitsumi Electric Co Ltd | 半導体装置の静電保護回路 |
JP2005142261A (ja) * | 2003-11-05 | 2005-06-02 | Sanyo Electric Co Ltd | 静電破壊保護装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010045216A (ja) * | 2008-08-13 | 2010-02-25 | Seiko Instruments Inc | 半導体装置 |
JP2011204939A (ja) * | 2010-03-26 | 2011-10-13 | On Semiconductor Trading Ltd | 半導体集積回路 |
JP2014056972A (ja) * | 2012-09-13 | 2014-03-27 | Ricoh Co Ltd | 静電破壊保護回路及び半導体集積回路 |
Also Published As
Publication number | Publication date |
---|---|
US20080001229A1 (en) | 2008-01-03 |
KR100857835B1 (ko) | 2008-09-10 |
US7800180B2 (en) | 2010-09-21 |
KR20080001608A (ko) | 2008-01-03 |
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