JP7043194B2 - 静電保護素子および半導体装置 - Google Patents
静電保護素子および半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 34
- 239000000758 substrate Substances 0.000 claims description 37
- 238000000926 separation method Methods 0.000 claims description 8
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- 230000003071 parasitic effect Effects 0.000 description 20
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 8
- 230000006378 damage Effects 0.000 description 8
- 230000007257 malfunction Effects 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000011780 sodium chloride Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
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- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
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- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
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- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
- H01L27/027—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823493—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
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- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
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- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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Description
図1から図3を参照しては、本実施の形態に係る静電保護素子50(「ESD保護素子」と称される場合もある)および半導体装置10ついて説明する。図1は静電保護素子50を含む半導体装置10の断面図、図2は平面図を各々示している。また、図3は、静電保護素子50の作用、および半導体装置10内における接続を示している。
図4から図6を参照して、本実施の形態に係る静電保護素子50Aを備えた半導体装置10Aについて説明する。図4は静電保護素子50Aを含む半導体装置10Aの断面図、図5は平面図を各々示している。また、図6は、静電保護素子50Aの作用を説明する図である。
図7を参照して、第2の実施の形態の変形例について説明する。本変形例は、上記実施の形態に係るESD保護用トランジスタ60Aに含まれるGG型NMOSの数をさらに変えた形態である。上記実施の形態では、GG型NMOSトランジスタの数を2個とした形態を例示して説明したが、GG型NMOSトランジスタの数は1個、2個に限られず、静電保護素子としての電流容量等を勘案して、適宜な数だけ配置してよい。
すなわち、第1NMOSと第2NMOSとによってソース42が共用され、第3NMOSと第4NMOSとによってソース42Aが共用され、第2NMOSと第3NMOSとによってドレイン40Aが共用されている。
従って、内部回路30の損傷、破壊等が抑制される。本実施の形態に係るESD保護用トランジスタ60Aによれば、小型でより電流容量が増大された静電保護素子を実現することができる。また、GG型NMOSトランジスタの数が偶数個なので、図5に示すESD保護用トランジスタ60Aと同様に、対向領域OAを2個設けることができ、P型ウエル領域18をより安定化することができる。なお、対向領域OAを2個とすることはGG型NMOSトランジスタの数が2個、4個の場合に限られず、一般に偶数個であれば可能である。
12 P型基板
14、16 N型エピタキシャル層
18 P型ウエル領域
20 DTI部、30 内部回路
32 静電保護素子
40、40A、40B ドレイン、42、42A ソース、44 ウエルコンタクト
50、50A 静電保護素子、52 ウエルコンタクト領域
54、54A、54B ドレイン領域
56、56B ソース領域
58、58A、58B、58C ゲート
60、60A、60B、60C ESD保護用トランジスタ
B1、B2、B3 寄生バイポーラトランジスタ
OA1~OA3 対向領域、T1~T4 端子
Claims (4)
- 第1の導電型の基板と、
前記基板上に形成された第2の導電型のエピタキシャル層と、
前記エピタキシャル層上に形成された第1の導電型のウエルと、
前記ウエルの内部に形成された、ドレイン領域、前記ドレイン領域とチャネル領域を隔てて形成されたソース領域、およびチャネル領域上に絶縁して形成されたゲートを含むトランジスタと、
前記ドレイン領域に対して、少なくとも前記ゲートの延伸方向と平行な方向に予め定められた距離だけ離間させて対向する対向領域を有するように形成され、かつ、前記トランジスタを囲んで形成された第1の導電型のウエルコンタクト領域と、
前記ウエルコンタクト領域を囲んで形成された素子分離溝と、
を含み、
前記素子分離溝は前記ウエルの表面から前記基板に到達する深さで形成され、
前記素子分離溝で囲まれた内側は、前記基板と前記エピタキシャル層と前記ウエルとが積層されて形成され、
前記素子分離溝の外側は、前記基板と前記エピタキシャル層とが積層されて形成されている
静電保護素子。 - 前記トランジスタは、
前記延伸方向と交差する方向にこの順で配置された前記ドレイン領域、前記ゲートおよび前記ソース領域を備えた複数のトランジスタであって、かつ、間にゲートを挟みつつ前記延伸方向と交差する方向に配置された複数のトランジスタであり、
前記延伸方向と交差する方向の末端に位置するソース領域に対しゲートを挟んで配置されたドレイン領域をさらに含み、
前記対向領域は、
前記延伸方向と交差する方向の一端に位置する前記ドレイン領域が前記ウエルコンタクト領域と対向して形成された第1の対向領域と、
前記延伸方向と交差する方向の他端に位置する前記ドレイン領域が前記ウエルコンタクト領域と対向して形成された第2の対向領域とを含む
請求項1に記載の静電保護素子。 - 外部との接続端子を有するとともに予め定められた処理を行う内部回路と、
前記ゲートおよび前記ソース領域が接地され、前記ドレイン領域が前記接続端子に接続された請求項1に記載の静電保護素子と、を含む
半導体装置。 - 外部との接続端子を有するとともに予め定められた処理を行う内部回路と、
前記複数のトランジスタの前記ゲートの各々および前記ソース領域の各々が接地され、前記複数のトランジスタの前記ドレイン領域の各々が前記接続端子に接続された請求項2に記載の静電保護素子と、を含む
半導体装置。
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JP2017143362A JP7043194B2 (ja) | 2017-07-25 | 2017-07-25 | 静電保護素子および半導体装置 |
US16/042,655 US10700053B2 (en) | 2017-07-25 | 2018-07-23 | Electrostatic protection element |
CN201810825992.XA CN109300891B (zh) | 2017-07-25 | 2018-07-25 | 静电保护元件以及半导体装置 |
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US11152352B2 (en) * | 2019-03-28 | 2021-10-19 | Intel Corporation | Dual mode snap back circuit device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009038101A (ja) | 2007-07-31 | 2009-02-19 | Sanyo Electric Co Ltd | 半導体装置 |
JP2010212588A (ja) | 2009-03-12 | 2010-09-24 | Fuji Electric Systems Co Ltd | 半導体素子、半導体装置および半導体素子の製造方法 |
JP2012028380A (ja) | 2010-07-20 | 2012-02-09 | Renesas Electronics Corp | 半導体装置 |
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EP0700089A1 (en) * | 1994-08-19 | 1996-03-06 | STMicroelectronics S.r.l. | A device for protection against electrostatic discharges on the I/O terminals of a MOS integrated circuit |
US6429491B1 (en) * | 1999-10-20 | 2002-08-06 | Transmeta Corporation | Electrostatic discharge protection for MOSFETs |
US6724050B2 (en) * | 2002-01-18 | 2004-04-20 | Texas Instruments Incorporated | ESD improvement by a vertical bipolar transistor with low breakdown voltage and high beta |
JP3888912B2 (ja) | 2002-03-04 | 2007-03-07 | ローム株式会社 | 半導体集積回路装置 |
US9559170B2 (en) * | 2012-03-01 | 2017-01-31 | X-Fab Semiconductor Foundries Ag | Electrostatic discharge protection devices |
US9484339B2 (en) * | 2014-11-26 | 2016-11-01 | Infineon Technologies Ag | Smart semiconductor switch |
US10431578B2 (en) * | 2017-03-28 | 2019-10-01 | Nxp B.V. | Electrostatic discharge (ESD) protection device and method for operating an ESD protection device |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2009038101A (ja) | 2007-07-31 | 2009-02-19 | Sanyo Electric Co Ltd | 半導体装置 |
JP2010212588A (ja) | 2009-03-12 | 2010-09-24 | Fuji Electric Systems Co Ltd | 半導体素子、半導体装置および半導体素子の製造方法 |
JP2012028380A (ja) | 2010-07-20 | 2012-02-09 | Renesas Electronics Corp | 半導体装置 |
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US20190035777A1 (en) | 2019-01-31 |
CN109300891A (zh) | 2019-02-01 |
US10700053B2 (en) | 2020-06-30 |
JP2019029361A (ja) | 2019-02-21 |
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