JP4209432B2 - 静電破壊保護装置 - Google Patents
静電破壊保護装置 Download PDFInfo
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- JP4209432B2 JP4209432B2 JP2006162001A JP2006162001A JP4209432B2 JP 4209432 B2 JP4209432 B2 JP 4209432B2 JP 2006162001 A JP2006162001 A JP 2006162001A JP 2006162001 A JP2006162001 A JP 2006162001A JP 4209432 B2 JP4209432 B2 JP 4209432B2
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- voltage
- transistor
- electrostatic breakdown
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- 230000015556 catabolic process Effects 0.000 claims description 154
- 239000004065 semiconductor Substances 0.000 claims description 39
- 230000005611 electricity Effects 0.000 claims description 29
- 230000003068 static effect Effects 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 24
- 239000010410 layer Substances 0.000 description 30
- 239000002184 metal Substances 0.000 description 24
- 229910052751 metal Inorganic materials 0.000 description 24
- 230000004048 modification Effects 0.000 description 23
- 238000012986 modification Methods 0.000 description 23
- 238000000034 method Methods 0.000 description 18
- 239000011229 interlayer Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 6
- -1 phosphorus ions Chemical class 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Description
以下、図面を参照して本発明の実施の形態について説明する。実施の形態1にかかる静電破壊保護装置1の回路図を図1に示す。図1に示すように、実施の形態1にかかる静電破壊保護装置1は、第1のバイポーラトランジスタ(例えば、NPNトランジスタ2)と第2のバイポーラトランジスタ(例えば、PNPトランジスタ3)とを有している。また、静電破壊保護装置1は、第1の電源端子(例えば、電源端子であって、以降VDD端子と称す)、入出力端子(以降、I/O端子と称す)、第2の電源端子(例えば、接地端子であって、以降GND端子と称す)を有している。I/O端子は、半導体装置の内部回路と接続されている。内部回路は、例えばNMOSトランジスタとPMOSトランジスタとを用いた回路である。
実施の形態2にかかる静電破壊保護装置1aは、実施の形態1にかかる静電破壊保護装置1のウェル領域に形成される寄生抵抗(抵抗RNW及び抵抗RPW)の抵抗値を実質的に大きくしたものである。この寄生抵抗の抵抗値を大きくすると、エミッタ端子とベース端子との間に形成されるダイオードがブレークダウンした後に、I/O端子とVDD端子又はGND端子との間の電位差をサージ電流の大きさに応じて拡大することが可能である。この電位差の拡大によって、トランジスタがスナップバック動作を開始する前にダイオードがブレークダウン動作を開始した場合であっても、ダイオードが破壊する前にトランジスタがスナップバック動作を開始することが可能である。
2 NPNトランジスタ
3 PNPトランジスタ
4 コンタクト
5 基板領域
6 絶縁領域
7、8 層間膜
9 ビア
10 Nウェル領域
11 PNPトランジスタのベース領域
12 PNPトランジスタのコレクタ領域
13 PNPトランジスタのエミッタ領域
14 LDDB領域
14a Pウェル領域
15 ディープNウェル領域
20 Pウェル領域
21 NPNトランジスタのベース領域
22 NPNトランジスタのコレクタ領域
23 NPNトランジスタのエミッタ領域
24 LDDP領域
24a ウェル領域
30〜33 金属配線
RNW 抵抗
RPW 抵抗
Claims (3)
- 第1、第2の電源端子と入出力端子とを有する半導体装置において、前記第1、第2の電源端子と前記入出力端子との間に印加されるサージ電流から前記半導体装置を保護する静電破壊保護装置であって、
前記第1の電源端子にコレクタ端子が接続され、前記入出力端子にエミッタ端子が接続され、前記第2の電源端子にベース端子が接続される第1のバイポーラトランジスタと、
前記第2の電源端子にコレクタ端子が接続され、前記入出力端子にエミッタ端子が接続され、前記第1の電源端子にベース端子が接続される第2のバイポーラトランジスタとを有し、
前記第1、第2のバイポーラトランジスタのうち少なくとも一方のバイポーラトランジスタは、エミッタ端子が形成されるエミッタ領域の隣接する下部に、前記エミッタ領域と同じ導電型で形成され、前記エミッタ領域よりも不純物濃度の低い埋め込み領域を有する静電破壊保護装置。 - 前記第1、第2のバイポーラトランジスタのうち他方のバイポーラトランジスタのコレクタ端子とエミッタ端子とが導通状態となる動作開始電圧は、上記少なくとも一方のバイポーラトランジスタのエミッタ端子とベース端子との間に形成されるPN接合部分の降伏電圧よりも低いことを特徴とする請求項1に記載の静電破壊保護装置。
- 前記第1のバイポーラトランジスタは、NPN型のバイポーラトランジスタであり、前記第2のバイポーラトランジスタは、PNP型のバイポーラトランジスタであることを特徴とする請求項1に記載の静電破壊保護装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006162001A JP4209432B2 (ja) | 2006-06-12 | 2006-06-12 | 静電破壊保護装置 |
US11/806,779 US7939905B2 (en) | 2006-06-12 | 2007-06-04 | Electrostatic discharge protection method and device for semiconductor device including an electrostatic discharge protection element providing a discharge path of a surge current |
CN200710109033XA CN101097915B (zh) | 2006-06-12 | 2007-06-12 | 用于半导体器件的静电放电保护方法及器件 |
US13/064,087 US8115270B2 (en) | 2006-06-12 | 2011-03-04 | Electrostatic discharge protection method and device for semiconductor device including an electrostatic discharge protection element providing a discharge path of a surge current |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006162001A JP4209432B2 (ja) | 2006-06-12 | 2006-06-12 | 静電破壊保護装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007335440A JP2007335440A (ja) | 2007-12-27 |
JP4209432B2 true JP4209432B2 (ja) | 2009-01-14 |
Family
ID=38821024
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006162001A Expired - Fee Related JP4209432B2 (ja) | 2006-06-12 | 2006-06-12 | 静電破壊保護装置 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7939905B2 (ja) |
JP (1) | JP4209432B2 (ja) |
CN (1) | CN101097915B (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080285741A1 (en) * | 2007-05-16 | 2008-11-20 | Uniden Corporation | Telephone interface circuit |
US8411848B2 (en) * | 2008-11-11 | 2013-04-02 | Uniden Corporation | Telephone interface circuit for providing over-current and over-voltage protection |
US8553380B2 (en) * | 2010-07-08 | 2013-10-08 | Analog Devices, Inc. | Apparatus and method for electronic circuit protection |
TW201209993A (en) * | 2010-08-19 | 2012-03-01 | Beyond Innovation Tech Co Ltd | ESD-protection structure |
US8390096B2 (en) * | 2010-11-16 | 2013-03-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Adjustable holding voltage ESD protection device |
CN103943612B (zh) * | 2013-01-22 | 2017-03-01 | 联发科技股份有限公司 | 静电放电保护装置 |
US20140203368A1 (en) | 2013-01-22 | 2014-07-24 | Mediatek Inc. | Electrostatic discharge protection device |
US9324827B1 (en) * | 2014-10-28 | 2016-04-26 | Globalfoundries Inc. | Non-planar schottky diode and method of fabrication |
JP6268156B2 (ja) | 2015-12-24 | 2018-01-24 | 株式会社藤商事 | 遊技機 |
CN106935582B (zh) * | 2015-12-30 | 2020-09-29 | 格科微电子(上海)有限公司 | 三维集成电路系统的抗静电放电方法 |
JP6824667B2 (ja) * | 2016-08-31 | 2021-02-03 | ラピスセミコンダクタ株式会社 | 半導体装置 |
JP6705726B2 (ja) * | 2016-09-14 | 2020-06-03 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9793258B1 (en) | 2016-11-04 | 2017-10-17 | United Microelectronics Corp. | Electrostatic discharge device |
US10861843B2 (en) * | 2016-12-21 | 2020-12-08 | Texas Instruments Incorporated | Electrostatic discharge protection device |
US10361186B1 (en) * | 2018-02-07 | 2019-07-23 | Infineon Technologies Ag | Suppression of parasitic discharge path in an electrical circuit |
US11462648B2 (en) | 2019-12-05 | 2022-10-04 | Globalfoundries U.S. Inc. | Fin-based Schottky diode for integrated circuit (IC) products and methods of making such a Schottky diode |
DE112021006106T5 (de) * | 2020-12-24 | 2023-09-28 | Rohm Co., Ltd. | Halbleiterbauteil |
JP7048160B2 (ja) * | 2021-01-13 | 2022-04-05 | ラピスセミコンダクタ株式会社 | 半導体装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02133965A (ja) | 1988-11-15 | 1990-05-23 | Seiko Epson Corp | ゲート保護装置 |
JPH05267588A (ja) | 1992-03-24 | 1993-10-15 | Nissan Motor Co Ltd | 半導体保護装置 |
US5808342A (en) * | 1996-09-26 | 1998-09-15 | Texas Instruments Incorporated | Bipolar SCR triggering for ESD protection of high speed bipolar/BiCMOS circuits |
JP2005123533A (ja) | 2003-10-20 | 2005-05-12 | Nippon Telegr & Teleph Corp <Ntt> | 静電放電保護回路 |
DE102004009981B4 (de) * | 2004-03-01 | 2005-12-29 | Infineon Technologies Ag | ESD-Schutzschaltkreis mit Kollektorstrom-gesteuerter Zündung für eine monolithisch integrierte Schaltung |
-
2006
- 2006-06-12 JP JP2006162001A patent/JP4209432B2/ja not_active Expired - Fee Related
-
2007
- 2007-06-04 US US11/806,779 patent/US7939905B2/en active Active
- 2007-06-12 CN CN200710109033XA patent/CN101097915B/zh not_active Expired - Fee Related
-
2011
- 2011-03-04 US US13/064,087 patent/US8115270B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7939905B2 (en) | 2011-05-10 |
CN101097915B (zh) | 2010-11-17 |
CN101097915A (zh) | 2008-01-02 |
US20110157754A1 (en) | 2011-06-30 |
US8115270B2 (en) | 2012-02-14 |
US20070284667A1 (en) | 2007-12-13 |
JP2007335440A (ja) | 2007-12-27 |
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