JP5285373B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5285373B2 JP5285373B2 JP2008250907A JP2008250907A JP5285373B2 JP 5285373 B2 JP5285373 B2 JP 5285373B2 JP 2008250907 A JP2008250907 A JP 2008250907A JP 2008250907 A JP2008250907 A JP 2008250907A JP 5285373 B2 JP5285373 B2 JP 5285373B2
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- diffusion layer
- layer
- mos transistor
- type diffusion
- protection element
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- 239000004065 semiconductor Substances 0.000 title claims description 27
- 238000009792 diffusion process Methods 0.000 claims description 192
- 238000000034 method Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 11
- 238000002955 isolation Methods 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 230000003071 parasitic effect Effects 0.000 description 18
- 239000012535 impurity Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000000926 separation method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 230000009194 climbing Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
2 P型の単結晶シリコン基板
3 エピタキシャル層
8 N型の拡散層
11 N型の拡散層
15 MOSトランジスタ
24 N型の拡散層
Claims (5)
- MOSトランジスタと、前記MOSトランジスタと並列接続し、前記MOSトランジスタ構造を用い、前記MOSトランジスタを過電圧から保護する保護素子とを有する半導体装置において、
前記MOSトランジスタと前記保護素子とは同一の半導体層に形成され、
前記保護素子は、前記MOSトランジスタのバックゲート拡散層と同一工程にて形成され、前記バックゲート拡散層と同一導電型の第1の拡散層と、
前記第1の拡散層に形成され、前記MOSトランジスタのソース拡散層と同一工程にて形成され、前記ソース拡散層よりも拡散幅が広く、前記ソース拡散層と同一導電型の第2の拡散層と、
前記第1の拡散層の周囲に形成され、前記MOSトランジスタのドレイン拡散層と同一工程にて形成され、前記ドレイン拡散層と同一導電型の第3の拡散層とを有し、
前記第1の拡散層と前記第3の拡散層との離間距離と前記バックゲート拡散層と前記ドレイン拡散層との離間距離は同一となり、
前記保護素子の前記第1の拡散層と前記第3の拡散層との間のアバランシェ電圧は、前記MOSトランジスタの前記バックゲート拡散層と前記ドレイン拡散層との間のアバランシェ電圧と同一であることを特徴とする半導体装置。 - 前記保護素子は、前記第1の拡散層に対し前記第3の拡散層よりも外周側に前記ドレイン拡散層と同一導電型の第4の拡散層とを有し、
前記第4の拡散層は、前記MOSトランジスタのドレイン電極と電気的に接続し、
少なくとも前記第1の拡散層と前記第2の拡散層とはショートし、前記MOSトランジスタのソース電極と電気的に接続することを特徴とする請求項1に記載の半導体装置。 - 前記保護素子は、前記MOSトランジスタのドレイン埋込層と同一導電型の埋込層を有し、
前記第4の拡散層は、前記埋込層と接続することを特徴とする請求項2に記載の半導体装置。 - 前記第4の拡散層は、一環状に配置され、前記第3の拡散層は、前記第4の拡散層及び前記半導体層を介してドレイン電位が印加されることを特徴とする請求項2または請求項3に記載の半導体装置。
- 前記半導体層は、半導体基板上にエピタキシャル層が積層して形成され、
前記保護素子は、分離領域に区画された前記エピタキシャル層内に形成され、前記分離領域は上部拡散層と、下部埋込層が連結して成り、
前記上部拡散層の前記エピタキシャル層表面から這い下がり幅は、前記下部埋込層の前記半導体基板表面からの這い上がり幅よりも狭いことを特徴とする請求項1から請求項4のいずれか1項に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008250907A JP5285373B2 (ja) | 2008-09-29 | 2008-09-29 | 半導体装置 |
US12/568,441 US8169028B2 (en) | 2008-09-29 | 2009-09-28 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008250907A JP5285373B2 (ja) | 2008-09-29 | 2008-09-29 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010086988A JP2010086988A (ja) | 2010-04-15 |
JP5285373B2 true JP5285373B2 (ja) | 2013-09-11 |
Family
ID=42056456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008250907A Active JP5285373B2 (ja) | 2008-09-29 | 2008-09-29 | 半導体装置 |
Country Status (2)
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US (1) | US8169028B2 (ja) |
JP (1) | JP5285373B2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8354716B2 (en) * | 2010-07-02 | 2013-01-15 | Macronix International Co., Ltd. | Semiconductor devices and methods of manufacturing the same |
JP5567437B2 (ja) * | 2010-09-17 | 2014-08-06 | 新日本無線株式会社 | 半導体装置および集積回路 |
JP5749616B2 (ja) * | 2011-09-27 | 2015-07-15 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
JP6011136B2 (ja) * | 2012-08-09 | 2016-10-19 | 富士電機株式会社 | 半導体装置 |
JP5904905B2 (ja) * | 2012-08-23 | 2016-04-20 | 株式会社東芝 | 半導体装置 |
KR102057340B1 (ko) * | 2013-03-29 | 2019-12-19 | 매그나칩 반도체 유한회사 | 반도체 소자 및 그 제조방법 |
KR101975608B1 (ko) * | 2013-06-12 | 2019-05-08 | 매그나칩 반도체 유한회사 | 고전압용 esd 트랜지스터 및 그 정전기 보호 회로 |
US20210064074A1 (en) | 2019-09-03 | 2021-03-04 | Renesas Electronics America Inc. | Low-voltage collector-free bandgap voltage generator device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW473983B (en) * | 1999-07-28 | 2002-01-21 | Rohm Co Ltd | Semiconductor integrated circuit device |
JP4423466B2 (ja) | 2004-02-17 | 2010-03-03 | 富士電機システムズ株式会社 | 半導体装置 |
JP4785113B2 (ja) * | 2005-02-24 | 2011-10-05 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置 |
JP4186970B2 (ja) * | 2005-06-30 | 2008-11-26 | セイコーエプソン株式会社 | 集積回路装置及び電子機器 |
JP2007096211A (ja) * | 2005-09-30 | 2007-04-12 | Ricoh Co Ltd | 半導体装置 |
JP2008010667A (ja) * | 2006-06-29 | 2008-01-17 | Mitsumi Electric Co Ltd | 半導体装置 |
JP5431637B2 (ja) * | 2006-09-29 | 2014-03-05 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
JP2008172112A (ja) * | 2007-01-15 | 2008-07-24 | Toshiba Corp | 半導体装置 |
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2008
- 2008-09-29 JP JP2008250907A patent/JP5285373B2/ja active Active
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2009
- 2009-09-28 US US12/568,441 patent/US8169028B2/en active Active
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Publication number | Publication date |
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JP2010086988A (ja) | 2010-04-15 |
US20100078709A1 (en) | 2010-04-01 |
US8169028B2 (en) | 2012-05-01 |
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