CN103579232A - 一种平面栅型mos管及其制造方法 - Google Patents
一种平面栅型mos管及其制造方法 Download PDFInfo
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- CN103579232A CN103579232A CN201210283187.1A CN201210283187A CN103579232A CN 103579232 A CN103579232 A CN 103579232A CN 201210283187 A CN201210283187 A CN 201210283187A CN 103579232 A CN103579232 A CN 103579232A
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
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CN201210283187.1A CN103579232A (zh) | 2012-08-10 | 2012-08-10 | 一种平面栅型mos管及其制造方法 |
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CN201210283187.1A CN103579232A (zh) | 2012-08-10 | 2012-08-10 | 一种平面栅型mos管及其制造方法 |
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CN103579232A true CN103579232A (zh) | 2014-02-12 |
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CN201210283187.1A Pending CN103579232A (zh) | 2012-08-10 | 2012-08-10 | 一种平面栅型mos管及其制造方法 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020093059A1 (en) * | 2001-01-15 | 2002-07-18 | Nec Corporation | Protective circuit for a semiconductor device |
JP2003197761A (ja) * | 2001-12-28 | 2003-07-11 | Denso Corp | 半導体装置 |
US20080001229A1 (en) * | 2006-06-29 | 2008-01-03 | Atsushi Watanabe | Semiconductor device |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20020093059A1 (en) * | 2001-01-15 | 2002-07-18 | Nec Corporation | Protective circuit for a semiconductor device |
JP2003197761A (ja) * | 2001-12-28 | 2003-07-11 | Denso Corp | 半導体装置 |
US20080001229A1 (en) * | 2006-06-29 | 2008-01-03 | Atsushi Watanabe | Semiconductor device |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140113 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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TA01 | Transfer of patent application right |
Effective date of registration: 20140113 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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SE01 | Entry into force of request for substantive examination | ||
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C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140212 |