JP2010129746A - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
- Publication number
- JP2010129746A JP2010129746A JP2008302225A JP2008302225A JP2010129746A JP 2010129746 A JP2010129746 A JP 2010129746A JP 2008302225 A JP2008302225 A JP 2008302225A JP 2008302225 A JP2008302225 A JP 2008302225A JP 2010129746 A JP2010129746 A JP 2010129746A
- Authority
- JP
- Japan
- Prior art keywords
- sic diode
- semiconductor module
- sic
- switching element
- diode elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 86
- 230000002093 peripheral effect Effects 0.000 claims description 23
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 230000020169 heat generation Effects 0.000 abstract description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 157
- 229910010271 silicon carbide Inorganic materials 0.000 description 156
- 239000000758 substrate Substances 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 230000017525 heat dissipation Effects 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 206010037660 Pyrexia Diseases 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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Abstract
【解決手段】 SiC製ダイオード素子(8)をスイッチング素子(5)上の周辺部に配設して、SiC製ダイオード素子(8)の発熱による熱を放熱し易くすることにより、SiC製ダイオード素子(8)の温度上昇が抑制されるため、半導体モジュールの温度上昇が抑制される。
【選択図】図1
Description
図1は、この発明の実施の形態1に係る半導体モジュールの側面図である。
この発明の実施の形態2は、複数のSiC製ダイオード素子を用いた場合として、2つのSiC製ダイオード素子をSi製IGBT素子5上の周辺部に配置したものである。
実施の形態2においては、複数のSiCダイオードとして、2つのSiC製ダイオード素子15a及び15bをSi製IGBT素子5上の周辺部に配置したものを示した。この発明の実施の形態3は、4つのSiC製ダイオード素子をSi製IGBT素子5上の周辺部に配置したものである。
実施の形態1においては、Si製IGBT素子5及びSiC製ダイオード素子8に対して電流を入出力する入出力部として、第1の電線10、第2の電線11及び第3の電線12を用いたものを示した。この発明の実施の形態4では、第1の電線10、第2の電線11及び第3の電線12に代えて、図8に示すように、銅などの金属からなる板状の第1のリード板21、第2のリード板22及び第3のリード板23が用いられる。その他の構成については、実施の形態1の図1で示した構成と同等であるため、ここでの説明は省略する。
図10は、この発明の実施の形態5に係る半導体モジュールの側面図である。図10において、実施の形態1で示した図1と相違する点は、Si製IGBT素子5のエミッタ電極にSiC製ダイオード素子8のアノード電極を、はんだなどを用いて直接接合したことである。ここでは、SiC製ダイオード素子8は、実施の形態1の図1と比べて、上下逆になっている。これによりSi製IGBT素子5のエミッタ電極とSiC製ダイオード素子8のアノード電極が電気的に直接接続される。なお図10で示した符号の内、実施の形態1の図1と同一のものは、同一の符号を付し、ここでの説明は省略する。
図11は、この発明の実施の形態6に係る半導体モジュールの側面図である。図11において、実施の形態5で示した図10と相違する点は、電流の入出力部として、第2の電線11と第3の電線12に代えて、第2のリード板22をSi製IGBT素子5のエミッタ電極とエミッタ電極膜3との接続に用い、第3のリード板23をSiC製ダイオード素子8のカソード電極とコレクタ電極膜2との接続に用いたことである。なお図11で示した符号の内、実施の形態5の図10と同一のものは、同一の符号を付し、ここでの説明は省略する。
Claims (13)
- スイッチング素子と、
前記スイッチング素子上の周辺部に設けられたSiC製ダイオードと
を備えた半導体モジュール。 - スイッチング素子は方形であり、
前記SiC製ダイオード素子は、前記方形のスイッチング素子の一辺に近接して設けられた請求項1に記載の半導体モジュール。 - スイッチング素子は方形であり、
前記SiC製ダイオード素子は、前記方形のスイッチング素子の角部に設けられた請求項1に記載の半導体モジュール。 - SiC製ダイオード素子及び前記スイッチング素子に対する電流の入出力部であって、前記入出力部は板状のリード板である請求項1乃至3のいずれか1項に記載の半導体モジュール。
- スイッチング素子と前記SiC製ダイオード素子との間に絶縁板を備え、前記絶縁板はエポキシ樹脂からなる請求項1乃至4のいずれか1項に記載の半導体モジュール。
- スイッチング素子はSi製IGBT素子、SiC製IGBT素子、Si製MOSFET素子又はSiC製MOSFET素子のいずれか1つである請求項1乃至5のいずれか1項に記載の半導体モジュール。
- スイッチング素子と、
前記スイッチング素子上の周辺部に設けられた複数のSiC製ダイオードと
を備えた半導体モジュール。 - スイッチング素子は方形であり、
前記複数のSiC製ダイオード素子は、前記方形のスイッチング素子の辺に近接して設けられた請求項7に記載の半導体モジュール。 - スイッチング素子は方形であり、
前記複数のSiC製ダイオード素子は、前記方形のスイッチング素子の角部に設けられた請求項7に記載の半導体モジュール。 - 複数のSiC製ダイオード素子の数は2乃至4である請求項8又は9に記載の半導体モジュール。
- 複数のSiC製ダイオード素子及び前記スイッチング素子に対する電流の入出力部であって、前記入出力部は板状のリード板である請求項7乃至10のいずれか1項に記載の半導体モジュール。
- スイッチング素子と前記複数のSiC製ダイオード素子との間に絶縁板を備え、前記絶縁板はエポキシ樹脂からなる請求項7乃至11のいずれか1項に記載の半導体モジュール。
- スイッチング素子はSi製IGBT素子、SiC製IGBT素子、Si製MOSFET素子又はSiC製MOSFET素子のいずれか1つである請求項7乃至12のいずれか1項に記載の半導体モジュール。
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US12/543,779 US8168985B2 (en) | 2008-11-27 | 2009-08-19 | Semiconductor module including a switch and non-central diode |
DE102009043441.0A DE102009043441B4 (de) | 2008-11-27 | 2009-09-29 | Halbleitermodul |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US9407166B2 (en) | 2013-03-22 | 2016-08-02 | Hitachi, Ltd. | Inverter device |
JP2018509780A (ja) * | 2015-03-23 | 2018-04-05 | 広東美的制冷設備有限公司Gd Midea Air−Conditioning Equipment Co.,Ltd. | インテリジェントパワーモジュール及びその製造方法 |
JP6364556B1 (ja) * | 2017-02-20 | 2018-07-25 | 新電元工業株式会社 | 電子装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BR112012016900A2 (ja) * | 2010-01-18 | 2018-06-05 | Mitsubishi Electric Corporation | A power semiconductor module, a power converter, and a rail car |
WO2011089837A1 (ja) * | 2010-01-25 | 2011-07-28 | シャープ株式会社 | 複合型半導体装置 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003243612A (ja) * | 2002-02-21 | 2003-08-29 | Mitsubishi Electric Corp | 半導体装置 |
JP2004095670A (ja) * | 2002-08-29 | 2004-03-25 | Toshiba Corp | 半導体装置 |
JP2007027404A (ja) * | 2005-07-15 | 2007-02-01 | Sanyo Electric Co Ltd | 半導体装置 |
JP2009099663A (ja) * | 2007-10-15 | 2009-05-07 | Rohm Co Ltd | パワーモジュール |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000164800A (ja) | 1998-11-30 | 2000-06-16 | Mitsubishi Electric Corp | 半導体モジュール |
US6391682B1 (en) * | 2000-06-21 | 2002-05-21 | Siliconware Precision Industries Co., Ltd. | Method of performing flip-chip underfill in a wire-bonded chip-on-chip ball-grid array integrated circuit package module |
JP4146607B2 (ja) * | 2000-07-28 | 2008-09-10 | 三菱電機株式会社 | パワーモジュール |
JP4089143B2 (ja) * | 2000-08-30 | 2008-05-28 | 三菱電機株式会社 | 電力用半導体装置 |
JP2002208673A (ja) | 2001-01-10 | 2002-07-26 | Mitsubishi Electric Corp | 半導体装置およびパワーモジュール |
DE10301091B4 (de) | 2003-01-14 | 2015-01-22 | Infineon Technologies Ag | Leistungs-Halbleiterbauelement und Verfahren zur Verbindung von einem gemeinsamen Substratträger zugeordneten Halbleitereinrichtungen |
JP4164409B2 (ja) | 2003-06-13 | 2008-10-15 | 三菱電機株式会社 | 半導体パワーモジュール |
JP3718205B2 (ja) * | 2003-07-04 | 2005-11-24 | 松下電器産業株式会社 | チップ積層型半導体装置およびその製造方法 |
JP2007027403A (ja) | 2005-07-15 | 2007-02-01 | Sanyo Electric Co Ltd | 半導体装置 |
JP2007027432A (ja) * | 2005-07-15 | 2007-02-01 | Sanken Electric Co Ltd | 半導体装置 |
US7791308B2 (en) * | 2005-07-25 | 2010-09-07 | Panasonic Corporation | Semiconductor element and electrical apparatus |
US7808102B2 (en) * | 2006-07-28 | 2010-10-05 | Alpha & Omega Semiconductor, Ltd. | Multi-die DC-DC boost power converter with efficient packaging |
-
2008
- 2008-11-27 JP JP2008302225A patent/JP4803241B2/ja active Active
-
2009
- 2009-08-19 US US12/543,779 patent/US8168985B2/en active Active
- 2009-09-29 DE DE102009043441.0A patent/DE102009043441B4/de active Active
-
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- 2011-12-06 US US13/311,762 patent/US8421087B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003243612A (ja) * | 2002-02-21 | 2003-08-29 | Mitsubishi Electric Corp | 半導体装置 |
JP2004095670A (ja) * | 2002-08-29 | 2004-03-25 | Toshiba Corp | 半導体装置 |
JP2007027404A (ja) * | 2005-07-15 | 2007-02-01 | Sanyo Electric Co Ltd | 半導体装置 |
JP2009099663A (ja) * | 2007-10-15 | 2009-05-07 | Rohm Co Ltd | パワーモジュール |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012234926A (ja) * | 2011-04-28 | 2012-11-29 | Sanken Electric Co Ltd | 半導体装置 |
US9407166B2 (en) | 2013-03-22 | 2016-08-02 | Hitachi, Ltd. | Inverter device |
JP2018509780A (ja) * | 2015-03-23 | 2018-04-05 | 広東美的制冷設備有限公司Gd Midea Air−Conditioning Equipment Co.,Ltd. | インテリジェントパワーモジュール及びその製造方法 |
JP6364556B1 (ja) * | 2017-02-20 | 2018-07-25 | 新電元工業株式会社 | 電子装置 |
WO2018150553A1 (ja) * | 2017-02-20 | 2018-08-23 | 新電元工業株式会社 | 電子装置 |
CN108780786A (zh) * | 2017-02-20 | 2018-11-09 | 新电元工业株式会社 | 电子装置 |
US10600712B2 (en) | 2017-02-20 | 2020-03-24 | Shindengen Electric Manufacturing Co., Ltd. | Electronic device |
EP3584829A4 (en) * | 2017-02-20 | 2021-03-10 | Shindengen Electric Manufacturing Co., Ltd. | ELECTRONIC DEVICE |
CN108780786B (zh) * | 2017-02-20 | 2021-10-01 | 新电元工业株式会社 | 电子装置 |
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US20100127277A1 (en) | 2010-05-27 |
DE102009043441A1 (de) | 2010-07-15 |
US8421087B2 (en) | 2013-04-16 |
US20120074428A1 (en) | 2012-03-29 |
JP4803241B2 (ja) | 2011-10-26 |
US8168985B2 (en) | 2012-05-01 |
DE102009043441B4 (de) | 2019-06-06 |
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