JP2021141221A - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
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- JP2021141221A JP2021141221A JP2020038368A JP2020038368A JP2021141221A JP 2021141221 A JP2021141221 A JP 2021141221A JP 2020038368 A JP2020038368 A JP 2020038368A JP 2020038368 A JP2020038368 A JP 2020038368A JP 2021141221 A JP2021141221 A JP 2021141221A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 192
- 239000000758 substrate Substances 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000000956 alloy Substances 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 229910000640 Fe alloy Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
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Abstract
Description
(1)主電流の流れる並列数を従来の1列から2列に増やした。
(2)P端子とN端子間の電流経路ができる限り近くなるように互いに平行となるような配線パターン(回路板のレイアウト)とした。
上記実施の形態に記載の半導体モジュールは、それぞれ上面電極と下面電極を有し、並列接続されて上アームを構成する第1半導体素子及び第2半導体素子と、平面視U字形状を有し、上面に前記第1半導体素子及び前記第2半導体素子が鏡像配置された第1導電層と、少なくとも2つに分岐した正極端部を有し、一方の前記正極端部が前記第1導電層の一端側に接続され、他方の前記正極端部が前記第1導電層の他端側に接続された正極端子と、一方及び他方の前記正極端部の間に配置された負極端部を有する負極端子と、を備える。
2 :積層基板
3a :第1半導体素子
3b :第2半導体素子
3c :第3半導体素子
3d :第4半導体素子
4a :第1配線
4b :第2配線
4c :第3配線
4d :第4配線
10 :ベース板
11 :ケース部材
12 :封止樹脂
13 :側壁部
14 :制御端子
15 :出力端子
15a :出力端部
16 :正極端子
16a :正極端部
16b :正極端部
17 :負極端子
17a :負極端部
20 :絶縁板
21 :放熱板
22 :回路板
23 :第1導電層
23a :第1長尺部
23b :第1長尺部
23c :第1連結部
24 :第2導電層
24a :第2長尺部
24b :第2長尺部
24c :第2連結部
24d :第3連結部
25 :第3導電層
25a :第3長尺部
25b :第3長尺部
25c :第4連結部
29a :制御用回路板
29b :制御用回路板
29c :制御用回路板
30 :ゲート電極
40 :第1接合部
41 :第2接合部
42 :連結部
F1 :電流経路
F2 :電流経路
Claims (9)
- それぞれ上面電極と下面電極を有し、並列接続されて上アームを構成する第1半導体素子及び第2半導体素子と、
平面視U字形状を有し、上面に前記第1半導体素子及び前記第2半導体素子が鏡像配置された第1導電層と、
少なくとも2つに分岐した正極端部を有し、一方の前記正極端部が前記第1導電層の一端側に接続され、他方の前記正極端部が前記第1導電層の他端側に接続された正極端子と、
一方及び他方の前記正極端部の間に配置された負極端部を有する負極端子と、を備える、半導体モジュール。 - 前記第1導電層は、
所定方向に延び、前記所定方向に交差する方向で対向する一対の第1長尺部と、
前記一対の第1長尺部の一端同士を連結する第1連結部と、を有し、
前記第1半導体素子は、一方の前記第1長尺部に配置され、
前記第2半導体素子は、他方の前記第1長尺部に配置されている、請求項1に記載の半導体モジュール。 - それぞれ上面電極と下面電極を有し、並列接続されて下アームを構成する第3半導体素子及び第4半導体素子と、
平面視U字形状を有し、上面に前記第3半導体素子及び前記第4半導体素子が鏡像配置された第2導電層と、を更に備え、
前記第2導電層は、前記第1導電層の内側において、一対の端部を前記負極端部に向けて配置されている、請求項2に記載の半導体モジュール。 - 前記第2導電層は、
所定方向に延び、前記所定方向に交差する方向で対向する一対の第2長尺部と、
前記一対の第2長尺部の一端同士を連結する第2連結部と、を有し、
前記第3半導体素子は、一方の前記第2長尺部に配置され、
前記第4半導体素子は、他方の前記第2長尺部に配置され、
前記第2連結部には、出力端子が接続されている、請求項3に記載の半導体モジュール。 - 前記第1半導体素子及び前記第2半導体素子は、前記一対の第1長尺部の一端側に偏って配置され、
前記第3半導体素子及び前記第4半導体素子は、前記一対の第2長尺部の他端側に偏って配置されている、請求項4に記載の半導体モジュール。 - 前記第2導電層は、前記一対の第2長尺部の中間部分同士を連結する第3連結部を更に有し、
前記第3半導体素子及び前記第4半導体素子は、前記第3連結部よりも前記一対の第2長尺部の他端側に配置されている、請求項5に記載の半導体モジュール。 - 前記第1導電層及び前記第2導電層に対して平面視逆U字形状を有し、前記第1導電層の内側で前記第2導電層の一対の端部側を囲うように配置された第3導電層を更に備え、
前記第3導電層の一対の端部は、前記第1半導体素子又は前記第2半導体素子に対向している、請求項4から請求項6のいずれか1項に記載の半導体モジュール。 - 前記第3導電層は、
所定方向に延び、前記所定方向に交差する方向で対向する一対の第3長尺部と、
前記一対の第3長尺部の一端同士を連結する第4連結部と、を有し、
前記第4連結部には、前記負極端部が接続されている、請求項7に記載の半導体モジュール。 - 前記第1半導体素子及び前記第2半導体素子は、前記一対の第1長尺部の延在方向に沿って複数ずつ配置され、
前記第3半導体素子及び前記第4半導体素子は、前記一対の第2長尺部の延在方向に沿って複数ずつ配置されている、請求項4から請求項8のいずれか1項に記載の半導体モジュール。
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