JP6413523B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6413523B2 JP6413523B2 JP2014183091A JP2014183091A JP6413523B2 JP 6413523 B2 JP6413523 B2 JP 6413523B2 JP 2014183091 A JP2014183091 A JP 2014183091A JP 2014183091 A JP2014183091 A JP 2014183091A JP 6413523 B2 JP6413523 B2 JP 6413523B2
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
- H02M7/487—Neutral point clamped inverters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/497—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode sinusoidal output voltages being obtained by combination of several voltages being out of phase
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
- H01L2224/4903—Connectors having different sizes, e.g. different diameters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
- Power Conversion In General (AREA)
Description
5,5a,5b,5c,6,6a,6b,6c 配線
7,8 出力配線
11,12,13,14 絶縁基板
15,16,17,18 ゲート配線
D1,D2,D3,D4,D5,D6,D7,D8,D13,D14,D15,D16,D21,D22,D23,D24,D25,D26,D27,D28,D29,D30,D31,D32,D33,D34,D35,D36 還流ダイオード
D9,D10,D11,D12,D17,D18,D37,D38,D39,D40,D41,D42,D43,D44,D45,D46,D47,D48 クランプダイオード
M,Ma,Mb,Mc 中間電位
N 負極電位
P 正極電位
T1,T2,T3,T4,T5,T6,T7,T8,T13,T14,T15,T16,T21,T22,T23,T24,T25,T26,T27,T28,T29,T30,T31,T32,T33,T34,T35,T36 IGBTチップ
T1E,T2E,T3E,T4E 補助エミッタ端子
T1G,T2G,T3G,T4G ゲート端子
U 出力端子
Claims (6)
- 少なくとも2つのスイッチング素子が直列に接続されていて隣接するスイッチング素子の接続部にクランプダイオードが接続されているスイッチング回路が少なくとも2つ並列に接続され、並列に接続された前記スイッチング回路間でそれぞれ同一レベルの電位を出力するように動作するスイッチング素子に同一の制御信号を印加するときの基準電位となる補助端子が基準電位配線によって接続された回路構成を有する半導体装置であって、
並列に接続された前記スイッチング回路間でそれぞれ前記クランプダイオードおよび前記基準電位配線が接続された前記接続部同士を、スイッチング素子の定格電流に近い電流容量を有し、かつ前記基準電位配線よりも低抵抗を有する配線で接続したことを特徴とする半導体装置。 - 前記スイッチング回路は、それぞれ独立した絶縁基板に形成された回路パターンに搭載され、前記配線は、隣接配置された前記絶縁基板上にて前記接続部を形成している前記回路パターン同士を接続したことを特徴とする請求項1記載の半導体装置。
- スイッチング素子は、IGBTチップであり、前記配線は、直列に接続された高電位側の前記IGBTチップのエミッタ端子間に接続されていることを特徴とする請求項1記載の半導体装置。
- 少なくとも2つのIGBTチップが直列に接続されていて隣接するIGBTチップの接続部にクランプダイオードが接続されているスイッチング回路が少なくとも2つ並列に接続され、並列に接続された前記スイッチング回路間でそれぞれ同一レベルの電位を出力するように動作するIGBTチップの補助エミッタ端子が基準電位配線によって接続された回路構成を有する半導体装置であって、
並列に接続された前記スイッチング回路間でそれぞれ前記クランプダイオードおよび前記基準電位配線が接続された前記接続部同士を、IGBTチップの定格電流に近い電流容量を有し、かつ前記基準電位配線よりも低抵抗を有する配線で接続したことを特徴とする半導体装置。 - 少なくとも2つのIGBTチップが直列に接続されていて隣接するIGBTチップの接続部にクランプダイオードが接続されているスイッチング回路が少なくとも2つ並列に接続された回路構成を有する半導体装置であって、
並列に接続された前記スイッチング回路間でそれぞれ前記クランプダイオードが接続された対応する前記接続部同士を、IGBTチップの定格電流に近い電流容量を有する配線で接続したことを特徴とする半導体装置。 - 前記配線は、0.1オーム以下の抵抗値を有していることを特徴とする請求項1,4または5に記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014183091A JP6413523B2 (ja) | 2014-09-09 | 2014-09-09 | 半導体装置 |
US14/806,290 US9722598B2 (en) | 2014-09-09 | 2015-07-22 | Semiconductor device |
CN201510441642.XA CN105406742B (zh) | 2014-09-09 | 2015-07-24 | 半导体装置 |
EP15178167.1A EP2996233B1 (en) | 2014-09-09 | 2015-07-24 | Semiconductor device |
Applications Claiming Priority (1)
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JP2014183091A JP6413523B2 (ja) | 2014-09-09 | 2014-09-09 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2016058515A JP2016058515A (ja) | 2016-04-21 |
JP6413523B2 true JP6413523B2 (ja) | 2018-10-31 |
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JP2014183091A Active JP6413523B2 (ja) | 2014-09-09 | 2014-09-09 | 半導体装置 |
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US (1) | US9722598B2 (ja) |
EP (1) | EP2996233B1 (ja) |
JP (1) | JP6413523B2 (ja) |
CN (1) | CN105406742B (ja) |
Families Citing this family (18)
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CN106059269B (zh) * | 2016-06-22 | 2018-10-30 | 杭州飞仕得科技有限公司 | 一种适用于igbt多并联的驱动电路 |
CN106129107B (zh) * | 2016-07-01 | 2019-07-09 | 电子科技大学 | 半导体结构、半导体组件及功率半导体器件 |
JP6794841B2 (ja) * | 2017-01-13 | 2020-12-02 | 株式会社デンソー | 電力変換装置、及びその製造方法 |
FR3073689B1 (fr) | 2017-11-10 | 2020-07-24 | Commissariat Energie Atomique | Module de commutation pour onduleur ou redresseur de tension |
JP2020039221A (ja) * | 2018-09-04 | 2020-03-12 | 株式会社日立製作所 | 電力変換装置及び電気車 |
CN111801795A (zh) | 2018-09-14 | 2020-10-20 | 富士电机株式会社 | 半导体装置 |
JP7054791B2 (ja) * | 2018-09-25 | 2022-04-15 | パナソニックIpマネジメント株式会社 | 半導体装置及びデバイス |
JP7065434B2 (ja) * | 2019-02-12 | 2022-05-12 | パナソニックIpマネジメント株式会社 | 電力変換装置 |
DE102019112935B4 (de) | 2019-05-16 | 2021-04-29 | Danfoss Silicon Power Gmbh | Halbleitermodul |
DE102019112936A1 (de) | 2019-05-16 | 2020-11-19 | Danfoss Silicon Power Gmbh | Halbleitermodul |
JP7138596B2 (ja) * | 2019-05-21 | 2022-09-16 | 三菱電機株式会社 | 半導体装置 |
DE102019114040A1 (de) * | 2019-05-26 | 2020-11-26 | Danfoss Silicon Power Gmbh | Dreistufiges Leistungsmodul |
CN112398322B (zh) * | 2019-08-16 | 2022-09-23 | 南京南瑞继保电气有限公司 | 可直串式模块、换流链、换流器及控制方法 |
US11587853B2 (en) * | 2019-09-03 | 2023-02-21 | Mediatek Inc. | Semiconductor devices having a serial power system |
JP7428019B2 (ja) | 2020-03-06 | 2024-02-06 | 富士電機株式会社 | 半導体モジュール |
EP3890179A1 (en) * | 2020-04-02 | 2021-10-06 | Siemens Aktiengesellschaft | Power converter |
CN113114061B (zh) * | 2021-03-26 | 2022-06-24 | 台达电子企业管理(上海)有限公司 | 变换器及抑制变换器的环流干扰的方法 |
NL2033773B1 (en) * | 2022-12-21 | 2024-06-27 | Lightyear Ipco B V | Multi-level multi-step power converter |
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RU2190919C2 (ru) * | 1998-04-28 | 2002-10-10 | Хитачи, Лтд. | Силовая цепь электрического силового преобразователя |
JP4209421B2 (ja) * | 1998-04-28 | 2009-01-14 | 株式会社日立製作所 | 電力変換器の主回路構造 |
JP3383588B2 (ja) | 1998-08-04 | 2003-03-04 | 株式会社東芝 | 電力変換装置 |
JP2004187360A (ja) * | 2002-11-29 | 2004-07-02 | Toshiba Corp | 電圧駆動型スイッチング素子のゲ−ト駆動回路および半導体モジュ−ル |
JP4582629B2 (ja) | 2004-11-30 | 2010-11-17 | 東芝三菱電機産業システム株式会社 | 3レベルインバータ装置 |
JP4581717B2 (ja) * | 2005-02-03 | 2010-11-17 | 富士電機ホールディングス株式会社 | 電力用半導体モジュール |
DE102008042693B4 (de) * | 2008-10-08 | 2015-10-08 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zum Betreiben einer Stromrichter-Schaltung mit Spannungserhöhung |
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JP5637944B2 (ja) * | 2011-06-29 | 2014-12-10 | 株式会社 日立パワーデバイス | パワー半導体モジュール |
CN103001573B (zh) * | 2011-09-13 | 2016-03-23 | 台达电子企业管理(上海)有限公司 | 中压变频驱动系统 |
JP2013236460A (ja) * | 2012-05-09 | 2013-11-21 | Mitsubishi Electric Corp | 3レベルインバータ |
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- 2015-07-22 US US14/806,290 patent/US9722598B2/en active Active
- 2015-07-24 EP EP15178167.1A patent/EP2996233B1/en active Active
- 2015-07-24 CN CN201510441642.XA patent/CN105406742B/zh active Active
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EP2996233A1 (en) | 2016-03-16 |
EP2996233B1 (en) | 2023-03-29 |
US20160072499A1 (en) | 2016-03-10 |
US9722598B2 (en) | 2017-08-01 |
CN105406742B (zh) | 2019-05-10 |
JP2016058515A (ja) | 2016-04-21 |
CN105406742A (zh) | 2016-03-16 |
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