JP6196853B2 - 3レベルコンバータハーフブリッジ - Google Patents
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- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
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- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
- H02M7/487—Neutral point clamped inverters
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Description
この場合、3レベルコンバータは、多数の3レベルコンバータハーフブリッジを有し、これらは3レベルコンバータを実現するために互いに電気的に相互接続されている。
第1のダイオード装置が第5のダイオードと第6のダイオードを有し、第6のダイオードのカソードが第5のダイオードのアノードと導電接続され、第2のダイオード装置が第3のダイオードと第4のダイオードを有し、第4のダイオードのカソードが第3のダイオードのアノードと導電接続されるならば、有利であると分かる。このやり方によって、3レベルコンバータハーフブリッジの全てのダイオードのために同じ逆電圧(reverse voltage)を有するダイオードの使用が可能である。
本発明の例示的な実施形態は図面に示され、以下でより詳細に説明される。
第1のパワー半導体スイッチT1の第2の負荷電流接続部Eは、第2のパワー半導体スイッチT2の第1の負荷電流接続部Cに導電接続されている。さらに、第4のパワー半導体スイッチT4の第1の負荷電流接続部Cは、第3のパワー半導体スイッチT3の第2の負荷電流接続部Eに導電接続されている。
この際、適切であるならば、本発明に係る3レベルコンバータハーフブリッジの電流容量を増すために、1つ又は複数の更なるパワー半導体スイッチが夫々、パワー半導体スイッチと並列に電気接続され得ることに言及されるべきである。
2 第1の基板
3 第2の基板
6a 第1の絶縁材料体
6b 第2の絶縁材料体
7a 第1の構造化伝導層
7b 第2の構造化伝導層
10 第1のダイオード装置
11 第2のダイオード装置
T1 第1のパワー半導体スイッチ
T2 第2のパワー半導体スイッチ
T3 第3のパワー半導体スイッチ
T4 第4のパワー半導体スイッチ
D1 第1のダイオード
D2 第2のダイオード
C 第1の負荷電流接続部
E 第2の負荷電流接続部
Claims (4)
- 第1の基板(2)と、該第1の基板(2)と分かれて配置された第2の基板(3)とを備えて構成される3レベルコンバータハーフブリッジであって、第1の基板(2)が第1の絶縁材料体(6a)と該第1の絶縁材料体(6a)上に配置された導電性の第1の構造化伝導層(7a)とを有し、第1のパワー半導体スイッチ(T1)、第2のパワー半導体スイッチ(T2)、第1のダイオード(D1)及び第1のダイオード装置(10)が第1の構造化伝導層(7a)上に配置され、該第1の構造化伝導層(7a)に接続されており、第2の基板(3)が第2の絶縁材料体(6b)と該第2の絶縁材料体(6b)上に配置された導電性の第2の構造化伝導層(7b)とを有し、第3のパワー半導体スイッチ(T3)、第4のパワー半導体スイッチ(T4)、第2のダイオード(D2)及び第2のダイオード装置(11)が第2の構造化伝導層(7b)上に配置され、該第2の構造化伝導層(7b)に接続されており、第1のパワー半導体スイッチ(T1)の第2の負荷電流接続部(E)が第2のパワー半導体スイッチ(T2)の第1の負荷電流接続部(C)に導電接続され、第4のパワー半導体スイッチ(T4)の第1の負荷電流接続部(C)が第3のパワー半導体スイッチ(T3)の第2の負荷電流接続部(E)に導電接続され、第1のダイオード(D1)のカソードが第1のパワー半導体スイッチ(T1)の第2の負荷電流接続部(E)に導電接続され、第2のダイオード(D2)のアノードが第3のパワー半導体スイッチ(T3)の第2の負荷電流接続部(E)に導電接続され、第2のパワー半導体スイッチ(T2)の第2の負荷電流接続部(E)が第1のダイオード装置(10)のカソード接続部に導電接続され、第3のパワー半導体スイッチ(T3)の第1の負荷電流接続部(C)が第2のダイオード装置(11)のアノード接続部に導電接続され、第1のパワー半導体スイッチ(T1)の第1の負荷電流接続部(C)が第2のダイオード装置(11)のカソード接続部に導電接続され、第4のパワー半導体スイッチ(T4)の第2の負荷電流接続部(E)が第1のダイオード装置(10)のアノード接続部に導電接続され、第1のダイオード(D1)のアノードが第2のダイオード(D2)のカソードに導電接続され、第2のパワー半導体スイッチ(T2)の第2の負荷電流接続部(E)が第3のパワー半導体スイッチ(T3)の第1の負荷電流接続部(C)に導電接続されている、3レベルコンバータハーフブリッジ。
- 第1のダイオード装置(10)が第5のダイオード(D5)と第6のダイオード(D6)を有し、第6のダイオード(D6)のカソードが第5のダイオード(D5)のアノードと導電接続され、第2のダイオード装置(11)が第3のダイオード(D3)と第4のダイオード(D4)を有し、第4のダイオード(D4)のカソードが第3のダイオード(D3)のアノードと導電接続されることを特徴とする、請求項1に記載の3レベルコンバータハーフブリッジ。
- 第1のダイオード(D1)のカソードが第4のダイオード(D4)のカソードに導電接続されず、第6のダイオード(D6)のカソードが第2のダイオード(D2)のアノードに導電接続されないことを特徴とする、請求項2に記載の3レベルコンバータハーフブリッジ。
- 第1のダイオード装置(10)が個別ダイオード(D7)の様式で具現化され、第2のダイオード装置が個別ダイオード(D8)の様式で具現化されることを特徴とする、請求項1に記載の3レベルコンバータハーフブリッジ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102012217905.4 | 2012-10-01 | ||
DE102012217905A DE102012217905B3 (de) | 2012-10-01 | 2012-10-01 | 3-Level-Stromrichterhalbbrücke |
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JP2014073073A JP2014073073A (ja) | 2014-04-21 |
JP6196853B2 true JP6196853B2 (ja) | 2017-09-13 |
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JP2013187201A Active JP6196853B2 (ja) | 2012-10-01 | 2013-09-10 | 3レベルコンバータハーフブリッジ |
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EP (1) | EP2713394A1 (ja) |
JP (1) | JP6196853B2 (ja) |
KR (1) | KR101946074B1 (ja) |
CN (1) | CN103715915B (ja) |
DE (1) | DE102012217905B3 (ja) |
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JP6490017B2 (ja) * | 2016-01-19 | 2019-03-27 | 三菱電機株式会社 | パワーモジュール、3相インバータシステム、およびパワーモジュールの検査方法 |
DE102016106359A1 (de) | 2016-04-07 | 2017-10-12 | Dr. Ing. H.C. F. Porsche Aktiengesellschaft | Modul für einen Multilevelkonverter |
DE202016102722U1 (de) * | 2016-05-23 | 2016-06-20 | Danfoss Silicon Power Gmbh | Umrichteranordnung |
DE102017100530A1 (de) * | 2017-01-12 | 2018-07-12 | Danfoss Silicon Power Gmbh | Drei-Stufen-Leistungsmodul |
DE102017100528A1 (de) * | 2017-01-12 | 2018-07-12 | Danfoss Silicon Power Gmbh | Leistungsmodul mit optimierter Anschlussstiftanordnung |
DE102017106515B4 (de) * | 2017-03-27 | 2024-02-22 | Danfoss Silicon Power Gmbh | 3-Pegel-Leistungsmodul |
EP3644360A1 (en) * | 2017-06-19 | 2020-04-29 | Shindengen Electric Manufacturing Co., Ltd. | Semiconductor device |
DE102021110251A1 (de) * | 2021-04-22 | 2022-10-27 | Sma Solar Technology Ag | Leistungshalbleiteranordnung und wechselrichterbrücke mit leistungshalbleiteranordnung |
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DE19725825C2 (de) * | 1996-06-18 | 2003-12-18 | Toshiba Kawasaki Kk | Neutralpunktgeklemmter Leistungsumrichter |
JP3263317B2 (ja) * | 1996-06-18 | 2002-03-04 | 株式会社東芝 | スイッチングモジュールおよびモジュールを用いた電力変換器 |
JPH10285950A (ja) * | 1997-04-03 | 1998-10-23 | Fuji Electric Co Ltd | 3レベル電力変換装置の主回路 |
JP3229931B2 (ja) * | 1997-09-08 | 2001-11-19 | 三菱電機株式会社 | 3レベル電力変換装置 |
JP3383588B2 (ja) * | 1998-08-04 | 2003-03-04 | 株式会社東芝 | 電力変換装置 |
US7215559B2 (en) * | 2004-09-28 | 2007-05-08 | Rockwell Automation Technologies, Inc. | Method and apparatus to reduce common mode voltages applied to a load by a drive |
DE102004059313B3 (de) * | 2004-12-09 | 2006-05-04 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitermodul mit verringerten parasitären Induktivitäten |
US7920393B2 (en) * | 2007-06-01 | 2011-04-05 | Drs Power & Control Technologies, Inc. | Four pole neutral-point clamped three phase converter with low common mode voltage output |
EP2264894B1 (en) * | 2009-06-19 | 2011-10-12 | Vincotech Holdings S.a.r.l. | Power module with additional transient current path and power module system |
CN101588126B (zh) * | 2009-06-24 | 2011-05-11 | 哈尔滨工业大学 | 宽负载特性的zvzcs三电平dc-dc变换器 |
CN102097959A (zh) * | 2010-12-28 | 2011-06-15 | 易事特电力系统技术有限公司 | 三相三电平vienna型整流器的空间矢量脉宽调制方法 |
JP2013143812A (ja) * | 2012-01-10 | 2013-07-22 | Nissan Motor Co Ltd | 電力変換装置 |
-
2012
- 2012-10-01 DE DE102012217905A patent/DE102012217905B3/de active Active
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2013
- 2013-08-01 EP EP13178906.7A patent/EP2713394A1/de not_active Withdrawn
- 2013-09-10 JP JP2013187201A patent/JP6196853B2/ja active Active
- 2013-09-25 KR KR1020130113684A patent/KR101946074B1/ko active IP Right Grant
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CN103715915A (zh) | 2014-04-09 |
JP2014073073A (ja) | 2014-04-21 |
KR101946074B1 (ko) | 2019-02-08 |
CN103715915B (zh) | 2017-09-22 |
EP2713394A1 (de) | 2014-04-02 |
DE102012217905B3 (de) | 2013-11-07 |
KR20140043279A (ko) | 2014-04-09 |
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