JP2012234926A - 半導体装置 - Google Patents
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- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Abstract
【解決手段】スイッチング素子と回生素子18とが単一の樹脂パッケージ31内に封止され、スイッチング素子は、シリコンからなり、コレクタ電極13とエミッタ電極26とゲート電極19とを有するIGBT14であって、回生素子18は、シリコンよりもバンドギャップが大きい化合物半導体からなり、かつ、コレクタ電極13と接続される第1の主電極とエミッタ電極26と接続される第2の主電極と第1及び第2の主電極間に流れる電流を制御する制御電極とを有する半導体素子であって、回生素子18は、エミッタ電極26の電位がコレクタ電極13の電位よりも高いときに第1の主電極から第2の主電極に電流を流し、かつ、スイッチング素子の導通期間のうち少なくとも一部の期間に第2の主電極から第1の主電極に電流を流す。
【選択図】図2
Description
第2の半導体装置(請求項2に対応)は、上記の構成において、好ましくは、前記回生素子は、第1の化合物半導体層と前記第1の化合物半導体層上に形成されかつ前記第1の化合物半導体層よりもバンドギャップが大きい第2の化合物半導体層とを有する主半導体領域と、前記主半導体領域上において互いに離間して形成された前記第1の主電極及び前記第2の主電極と、前記主半導体領域上において前記第1の主電極と前記第2の主電極との間に形成された前記制御電極と、を備えることを特徴とする。
第3の半導体装置(請求項3に対応)は、上記の構成において、好ましくは、前記回生素子は、前記スイッチング素子よりもチップ面積が小さいことを特徴とする。
第4の半導体装置(請求項4に対応)は、上記の構成において、好ましくは、前記回生素子は、前記スイッチング素子上に配置されることを特徴とする。
第5の半導体装置(請求項5に対応)は、上記の構成において、好ましくは、前記回生素子は、少なくとも前記スイッチング素子が導通状態から遮断状態へ移行する期間に、前記第2の主電極から前記第1の主電極に電流を流すことを特徴とする。
第6の半導体装置(請求項6に対応)は、上記の構成において、好ましくは、前記回生素子は、前記スイッチング素子と略同一のタイミングで遮断状態から導通状態へ移行することを特徴とする。
第7の半導体装置(請求項7に対応)は、上記の構成において、好ましくは、前記回生素子は、前記制御電極に電位が0Vのときに前記第1の主電極と前記第2の主電極との間に電流が流れないノーマリオフ型の半導体素子であることを特徴とする。
11 銅板
11A コレクタ端子
12 半田(導電性接着剤)
13 コレクタ電極
14 IGBT
15 エミッタ電極
16 半田電極(導電性接着剤)
17 裏面電極
18 回生素子
19 ゲート電極
20 ソース電極
21 ドレイン電極
22 ゲート電極層
23 リード線
24 ゲート端子
25 リード線
26 エミッタ(ソース)端子
27 リード線
28 ゲート端子
29 リード線
30 リード線
31 樹脂パッケージ
40 制御部
41 入力部
42 CPU
43 メモリ
44 ゲートドライブ
45 ゲートドライブ
100 半導体装置
101 銅板
102 IGBT
103 FRD
104 リード線
105 ゲート端子
106 リード線
107 エミッタ(アノード)端子
108 リード線
Claims (7)
- スイッチング素子と回生素子とが単一の樹脂パッケージ内に封止され、
前記スイッチング素子は、シリコンからなり、コレクタ電極とエミッタ電極とゲート電極とを有するIGBTであって、
前記回生素子は、シリコンよりもバンドギャップが大きい化合物半導体からなり、かつ、前記コレクタ電極と接続される第1の主電極と前記エミッタ電極と接続される第2の主電極と前記第1及び第2の主電極間に流れる電流を制御する制御電極とを有する半導体素子であって、
前記回生素子は、前記エミッタ電極の電位が前記コレクタ電極の電位よりも高いときに前記第1の主電極から前記第2の主電極に電流を流し、かつ、前記スイッチング素子の導通期間のうち少なくとも一部の期間に前記第2の主電極から前記第1の主電極に電流を流すことを特徴とする半導体装置。 - 前記回生素子は、第1の化合物半導体層と前記第1の化合物半導体層上に形成されかつ前記第1の化合物半導体層よりもバンドギャップが大きい第2の化合物半導体層とを有する主半導体領域と、前記主半導体領域上において互いに離間して形成された前記第1の主電極及び前記第2の主電極と、前記主半導体領域上において前記第1の主電極と前記第2の主電極との間に形成された前記制御電極と、を備えることを特徴とする請求項1に記載の半導体装置。
- 前記回生素子は、前記スイッチング素子よりもチップ面積が小さいことを特徴とする請求項1又は2に記載の半導体装置。
- 前記回生素子は、前記スイッチング素子上に配置されることを特徴とする請求項3に記載の半導体装置。
- 前記回生素子は、少なくとも前記スイッチング素子が導通状態から遮断状態へ移行する期間に、前記第2の主電極から前記第1の主電極に電流を流すことを特徴とする請求項1〜4のいずれか1項に記載の半導体装置。
- 前記回生素子は、前記スイッチング素子と略同一のタイミングで遮断状態から導通状態へ移行することを特徴とする請求項1〜5のいずれか1項に記載の半導体装置。
- 前記回生素子は、前記制御電極に電位が0Vのときに前記第1の主電極と前記第2の主電極との間に電流が流れないノーマリオフ型の半導体素子であることを特徴とする請求項1〜6のいずれか1項に記載の半導体装置。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017195259A (ja) * | 2016-04-19 | 2017-10-26 | 株式会社デンソー | 半導体モジュール、及び電力変換装置 |
JP2017195687A (ja) * | 2016-04-19 | 2017-10-26 | 株式会社デンソー | 電力変換装置 |
JP2017195255A (ja) * | 2016-04-19 | 2017-10-26 | 株式会社デンソー | 半導体モジュール |
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JPS6172411A (ja) * | 1984-09-18 | 1986-04-14 | Fuji Electric Co Ltd | スイツチング用半導体装置 |
JPH06141542A (ja) * | 1992-10-28 | 1994-05-20 | Fanuc Ltd | スイッチング電源回路 |
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JP2006344779A (ja) * | 2005-06-09 | 2006-12-21 | Toyota Motor Corp | 半導体装置および半導体装置の制御方法 |
JP2010129746A (ja) * | 2008-11-27 | 2010-06-10 | Mitsubishi Electric Corp | 半導体モジュール |
JP2011014789A (ja) * | 2009-07-03 | 2011-01-20 | Furukawa Electric Co Ltd:The | 窒化物系半導体電界効果トランジスタ |
JP2011036020A (ja) * | 2009-07-31 | 2011-02-17 | Daikin Industries Ltd | 電力変換装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017195259A (ja) * | 2016-04-19 | 2017-10-26 | 株式会社デンソー | 半導体モジュール、及び電力変換装置 |
JP2017195687A (ja) * | 2016-04-19 | 2017-10-26 | 株式会社デンソー | 電力変換装置 |
JP2017195255A (ja) * | 2016-04-19 | 2017-10-26 | 株式会社デンソー | 半導体モジュール |
US10424570B2 (en) | 2016-04-19 | 2019-09-24 | Denso Corporation | Power conversion apparatus |
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