JP2013219306A - 半導体ダイオード装置 - Google Patents
半導体ダイオード装置 Download PDFInfo
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- JP2013219306A JP2013219306A JP2012090930A JP2012090930A JP2013219306A JP 2013219306 A JP2013219306 A JP 2013219306A JP 2012090930 A JP2012090930 A JP 2012090930A JP 2012090930 A JP2012090930 A JP 2012090930A JP 2013219306 A JP2013219306 A JP 2013219306A
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- 229910002601 GaN Inorganic materials 0.000 claims description 28
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 12
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 11
- 239000002210 silicon-based material Substances 0.000 claims description 5
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 25
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Abstract
【解決手段】ワイドバンドギャップ型半導体材料で構成された、ノーマリオン型の高耐圧トランジスタと、前記高耐圧トランジスタに直列に接続し、前記高耐圧トランジスタよりも耐圧が低く、かつしきい値電圧が0.3V以上、1V以下であるMOSFETと、を備え、前記MOSFETのゲートとソースとが、接続されている半導体ダイオード装置。
【選択図】図1
Description
図1は、本発明の実施の形態1に係る半導体ダイオード装置の模式図である。半導体ダイオード装置10は、アノード電極11と、カソード電極12と、MOSFET(Metal-Oxide-Semiconductor Field Effect Transistor)13と、高耐圧トランジスタ14とを備えている。
図5は、本発明の実施の形態2に係る半導体ダイオード装置の模式図である。半導体ダイオード装置20は、アノード電極21と、カソード電極22と、MOSFET23と、高耐圧トランジスタ24と、導電性基板25とが、1つのパッケージ26に実装されて組み込まれたものである。
図6は、本発明の実施の形態2に係る半導体ダイオード装置の模式図である。半導体ダイオード装置30は、アノード電極31と、カソード電極22と、MOSFET33と、高耐圧トランジスタ24と、とが、1つのパッケージ36に実装されて組み込まれたものである。カソード電極22および高耐圧トランジスタ24は図5に示す半導体ダイオード装置20のものと同じである。
図7は、本発明の実施の形態4に係る半導体ダイオード装置の模式図である。半導体ダイオード装置40は、アノード電極21と、カソード電極42と、MOSFET23と、高耐圧トランジスタ44と、導電性基板45とが、1つのパッケージ46に実装されて組み込まれたものである。アノード電極21およびMOSFET23は図5に示す半導体ダイオード装置20のものと同じである。また、MOSFET23は導電性基板45上に実装されている。高耐圧トランジスタ44はカソード電極42上に実装されている。
図8は、本発明の実施の形態5に係る半導体ダイオード装置の模式図である。半導体ダイオード装置50は、アノード電極51と、カソード電極42と、アップドレイン型のMOSFET33と、縦型のSiC−JFETである高耐圧トランジスタ44とが、1つのパッケージ56に実装されて組み込まれたものである。MOSFET33はアノード電極51上に実装されている。高耐圧トランジスタ44はカソード電極42上に実装されている。MOSFET33のドレイン電極33cと高耐圧トランジスタ44のソース電極44aとは配線ワイヤW10で接続している。
11、21、31、51 アノード電極
12、22、42 カソード電極
13、23、33 MOSFET
13a、14a、14A5、14B4、23a、24a、44a ソース電極
13b、14b、14A6、14B7、23b、24b、33b、44b ゲート電極
13c、14c、14A7、14B5、24c、33c ドレイン電極
13d 内蔵ダイオード
14 高耐圧トランジスタ
14A HEMT
14A1 基板
14A2 バッファ層
14A3 GaN層
14A3a 2DEG層
14A4 AlGaN層
14B1 N型領域
14B2 N+型領域
14B6 P+型領域
24、44 高耐圧トランジスタ
25、45 導電性基板
26、36、4656 パッケージ
L1 破線
L2 実線
W1、W2、W3、W4、W5、W6、W7、W8、W9 配線ワイヤ
Claims (8)
- ワイドバンドギャップ型半導体材料で構成されたノーマリオン型の高耐圧トランジスタと、
前記高耐圧トランジスタに直列に接続し、前記高耐圧トランジスタよりも耐圧が低く、かつしきい値電圧が0.3V以上、1V以下であるMOSFETと、
を備え、前記MOSFETのゲートとソースとが接続されていることを特徴とする半導体ダイオード装置。 - 前記MOSFETの耐圧は前記高耐圧トランジスタのしきい値電圧よりも高いことを特徴とする請求項1に記載の半導体ダイオード装置。
- 前記ワイドバンドギャップ型半導体材料は窒化ガリウム系化合物半導体または炭化珪素であることを特徴とする請求項1または2に記載の半導体ダイオード装置。
- 前記MOSFETはシリコン材料で構成されていることを特徴とする請求項1〜3のいずれか一つに記載の半導体ダイオード装置。
- 前記高耐圧トランジスタはHEMTであることを特徴とする請求項1〜4のいずれか一つに記載の半導体ダイオード装置。
- 前記高耐圧トランジスタはJFETであることを特徴とする請求項1〜4のいずれか一つに記載の半導体ダイオード装置。
- 前記MOSFETはアップドレイン型であることを特徴とする請求項1〜6のいずれか一つに記載の半導体ダイオード装置。
- 前記高耐圧トランジスタと前記MOSFETとが1つのパッケージに組み込まれていることを特徴とする請求項1〜7のいずれか一つに記載の半導体ダイオード装置。
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CN110959193B (zh) * | 2019-02-21 | 2023-09-05 | 深圳市汇顶科技股份有限公司 | 具有低阈值电压和高击穿电压的二极管 |
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