WO2018150553A1 - 電子装置 - Google Patents

電子装置 Download PDF

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Publication number
WO2018150553A1
WO2018150553A1 PCT/JP2017/006023 JP2017006023W WO2018150553A1 WO 2018150553 A1 WO2018150553 A1 WO 2018150553A1 JP 2017006023 W JP2017006023 W JP 2017006023W WO 2018150553 A1 WO2018150553 A1 WO 2018150553A1
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WO
WIPO (PCT)
Prior art keywords
electronic element
conductor layer
base end
connector
electronic
Prior art date
Application number
PCT/JP2017/006023
Other languages
English (en)
French (fr)
Inventor
雄司 森永
宗一郎 梅田
Original Assignee
新電元工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 新電元工業株式会社 filed Critical 新電元工業株式会社
Priority to US15/570,864 priority Critical patent/US10600712B2/en
Priority to CN201780002105.2A priority patent/CN108780786B/zh
Priority to EP17797220.5A priority patent/EP3584829A4/en
Priority to KR1020187003071A priority patent/KR101954393B1/ko
Priority to PCT/JP2017/006023 priority patent/WO2018150553A1/ja
Priority to JP2017540304A priority patent/JP6364556B1/ja
Publication of WO2018150553A1 publication Critical patent/WO2018150553A1/ja

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Definitions

  • the present invention relates to an electronic device.
  • an electronic device that includes two or more stacked electronic elements and is sealed with a sealing portion such as a sealing resin is known.
  • a sealing portion such as a sealing resin
  • an aspect in which the electronic element and the conductor layer are connected by a plurality of wires has been used.
  • the heat dissipation when the upper electronic element generates heat is performed via the wire or the lower electronic element, it is not sufficient compared to the lower electronic element.
  • the present invention provides an electronic device that can efficiently dissipate heat generated from an electronic element.
  • An electronic device comprises: A substrate, A conductor layer having a first conductor layer and a second conductor layer provided on the substrate; A first electronic element provided in the first conductor layer; A second electronic element provided in the first electronic element; A base end portion provided on the second conductor layer; and a head portion formed integrally with the base end portion and connected to the front surface electrode of the second electronic element via a conductive adhesive.
  • the first electronic element and the second electronic element are power semiconductor elements;
  • the heating value of the first electronic element may be larger than the heating value of the second electronic element.
  • An electronic device comprises: One or more third electronic elements may be further provided above the first electronic element and below the second electronic element.
  • the head portion may include a second convex portion protruding toward the second electronic element side and a first convex portion protruding toward the second electronic element side from the second convex portion.
  • the head portion has a second convex portion protruding to the second electronic element side,
  • the proximal end has a support surface;
  • the planar shape of the second convex part is an oval,
  • the planar shape of the support surface may be a rectangle.
  • the base end portion may include a support surface and a recess provided on a peripheral edge of the support surface.
  • the base end portion has a bent portion that bends and extends to the front surface side,
  • the concave portion may extend to the front side at least up to the bent portion.
  • the area placed on the second conductor layer at the base end portion of the connector is larger than the area placed on the second electronic element of the head portion of the connector. Further, since the position of the center of gravity of the connector is above the base end portion of the connector, the head portion of the connector can be prevented from being inclined. From these things, the heat emitted from the first electronic element or the second electronic element can be efficiently transferred to the second conductor layer and released.
  • FIG. 1 is a perspective view of a semiconductor device according to an embodiment of the present invention.
  • FIG. 2 is an enlarged side view of a part of the semiconductor device according to the embodiment of the present invention.
  • FIG. 3 is a bottom view showing the connector used in the embodiment of the present invention.
  • FIG. 4 is a perspective view showing a connector used in the embodiment of the present invention.
  • FIG. 5 is a side view showing one aspect of the first convex portion used in the first embodiment of the present invention.
  • FIG. 6 is a side view showing another aspect of the first convex portion used in the first embodiment of the present invention.
  • FIG. 7A is a side sectional view showing a mode in which only one third semiconductor element is provided, and FIG. 7B shows a mode in which two third semiconductor elements are provided.
  • FIG. 8 is a bottom view showing a modification of the connector used in the embodiment of the present invention.
  • FIG. 9 is a bottom view showing another modification of the connector used in the embodiment of the present invention.
  • FIG. 10 is a plan view for explaining the shape of the front surface electrode of the second semiconductor element used in the embodiment of the present invention.
  • FIG. 11 is a side view of the semiconductor device according to the embodiment of the present invention.
  • the semiconductor device as an example of the electronic device of the present embodiment includes a substrate 5 made of, for example, an insulating material, and a conductor layer 70 made of copper or the like provided on the substrate 5. May be.
  • a heat radiating plate 79 made of copper or the like may be provided on the back surface of the substrate 5.
  • the semiconductor device may include a sealing portion 80 (see FIG. 11) made of a sealing resin and the like, and semiconductor elements 91 and 92 that are examples of electronic elements provided in the sealing portion 80.
  • a terminal (not shown) connected to the conductor layer 70 may protrude from the sealing portion 80 to the outside.
  • the conductor layer 70 may have a first conductor layer 71 and a second conductor layer 72 provided on the substrate 5.
  • the semiconductor elements 91 and 92 are provided on the first conductor layer 71, and are provided above the first semiconductor element 91, which is an example of the first electronic element, and the second electronic element.
  • a second semiconductor element 92 which is an example.
  • a semiconductor device is used as an electronic device, a first semiconductor element 91 is used as a first electronic element, and a second semiconductor element 92 is used as a second electronic element.
  • the semiconductor device is not limited and need not be a semiconductor.
  • the semiconductor device is formed integrally with the base end portion 45 provided on the second conductor layer 72 via a conductive adhesive 75 such as solder and the second semiconductor layer 72.
  • You may have the connector 50 which has the head part 40 provided through the conductive adhesive 75 on the front surface of the element 92.
  • FIG. The back surface of the first semiconductor element 91, the first conductor layer 71, the back surface of the second semiconductor element 92, and the front surface of the first semiconductor element 91 may be connected via a conductive adhesive 75 such as solder. Good.
  • the area of the base end portion 45 placed on the second conductor layer 72 may be larger than the area of the head portion 40 placed on the second semiconductor element 92.
  • the area placed on the second conductor layer 72 of the base end portion 45 is the area of the support surface 46 described later, and the area placed on the second semiconductor element 92 of the head portion 40 is described later. It is the area of the 2nd convex part 42 to do.
  • the base end portion 45 may be positioned below (the substrate 5 side) than the head portion 40, and the center of gravity of the connector 50 may be on the base end portion 45 side of the connector 50 (see FIGS. 4 and 11).
  • the hemispherical convex part shown in FIG. 11 has shown the position of the gravity center calculated as a result of simulation.
  • the first semiconductor element 91 may be a cascode-connected switching element, and the second semiconductor element 92 may be a control element. In this case, the heat generation amount of the switching element may be larger than the heat generation amount of the control element.
  • the first semiconductor element 91 may be a silicon carbide power device or a gallium nitride power device, and the second semiconductor element 92 may be a MOSFET.
  • the second semiconductor element 92 may be an integrated circuit, a switching element, or a rectifying element.
  • the conductor layer 70 may have a third conductor layer 73. As an example, the third conductor layer 73 is used when the second semiconductor element 92 is a switching element.
  • each of the first semiconductor element 91 and the second semiconductor element 92 may be a power semiconductor element.
  • the wiring resistance can be reduced by using the connector 50 as in the present embodiment.
  • the wire is formed of aluminum, but the connector 50 can be formed of a material containing copper (including only copper).
  • the wiring resistance can be further reduced, and as a result, noise emitted from the switching element can be reduced.
  • the first semiconductor element 91 is a cascode-connected switching element (silicon carbide power device or gallium nitride power device)
  • the influence of the noise described above can be reduced by employing the connector 50 made of a material containing copper.
  • the wiring resistance can be reduced, a current flows even if the switching speed of the switching element is decreased, and from this result, the generation of noise can be reduced.
  • the semiconductor elements may be stacked in three or more stages, provided above the first semiconductor element 91, and below the second semiconductor element 92.
  • One or more third semiconductor elements (third electronic elements) 93 may be provided.
  • 7A shows a mode in which only one third semiconductor element 93 is provided
  • FIG. 7B shows a mode in which two third semiconductor elements 93a and 93b are provided.
  • Three or more 3rd semiconductor elements may be provided.
  • the head portion 40 may have a first convex portion 41 protruding toward the second semiconductor element 92 side.
  • the first convex portion 41 may sink into the conductive adhesive 75 and contact the front surface of the second semiconductor element 92 with a point.
  • the base end portion 45 may have a support surface 46 that contacts the conductor layer 70 or is provided on the conductive adhesive 75 on the conductor layer 70.
  • the head portion 40 may have a second convex portion 42 that protrudes toward the second semiconductor element 92 in addition to the first convex portion 41, and as shown in FIG. 8, It is not necessary to have only the two convex portions 42 and the first convex portion 41. Moreover, as shown in FIG. 9, it is not necessary to have only the 1st convex part 41 and to have the 2nd convex part 42.
  • the head part 40 has the first convex part 41 and the second convex part 42, the first convex part 41 protrudes from the second convex part 42 toward the second semiconductor element 92.
  • the base end portion 45 may have a recess 47 provided on the periphery of the support surface 46.
  • the recess 47 may be provided so as to surround the entire support surface 46, but as shown in FIG. 3, the recess 47 is formed so as to continuously surround the three sides on the base end side of the support surface 46. Also good. Further, the recess 47 may be formed so as to surround the support surface 46 intermittently instead of continuously.
  • the base end portion 45 may have a bent portion 48 that bends and extends to the front surface side (the upper side in FIG. 4). The recess 47 may extend to the front side along a bent portion 48 extending from the support surface 46 to the front side.
  • the conductive adhesive 75 can be provided along the recessed part 47 provided in the bending part 48.
  • FIG. This is advantageous in that it is easy to form a ferret.
  • the shape of the concave portion 47 may be crushed when the bent portion 48 is formed.
  • the shape of the concave portion 47 can be prevented from being crushed when the bent portion 48 is formed.
  • the support surface 46 When the straight line connecting the center in the width direction (vertical direction in FIG. 3) of the base end portion 45 and the center in the width direction of the head portion 40 is the first direction (left and right direction in FIG. 3), the support surface 46
  • the length along the first direction may be longer than the length along the first direction of the second convex portion 42 (see FIG. 3).
  • the length of the support surface 46 along the first direction may be two to three times the length of the second protrusion 42 along the first direction.
  • the first convex portion 41 may be positioned at the center in the width direction of the head portion 40.
  • the planar shape of the first front surface electrode 92a connected to the head portion 40 may be a vertically long shape, and as an example, a rectangular shape may be used. Alternatively, as shown in FIG. 10, it may be a notched rectangle that is recessed only in the portion where the second front surface electrode 92b is provided.
  • the second front surface electrode 92b is used, for example, when the second semiconductor element 92 is a switching element.
  • a control terminal (not shown) extending from the sealing portion 80 to the outside is connected to the third conductor layer 73, and the second front surface is connected to the third conductor layer 73 via the wire 19 (see FIG. 1).
  • the electrode 92b may be connected. This control terminal may be used to control the second semiconductor element 92.
  • the planar shape of the second convex portion 42 may be an oval shape.
  • the planar shape of the support surface 46 may be a rectangle.
  • the planar shape of the front surface electrode 92a of the second semiconductor element 92 the planar shape of the second convex portion 42 may be a rectangle or a notched rectangle, but when a shape having corners is adopted, There is a possibility that the conductive adhesive 75 (see FIG. 2) provided between the second convex portion 42 and the second semiconductor element 92 may crack.
  • the planar shape of the second convex portion 42 by making the planar shape of the second convex portion 42 into an oval shape, it is possible to prevent the conductive adhesive 75 provided between the second convex portion 42 and the second semiconductor element 92 from cracking. Can be prevented.
  • the connector 50 and the conductor layer 70 are made of a material containing copper (including only copper) and the conductor layer 70 is also made of a material containing copper (including only copper). Are made of the same material or substantially the same material, the difference between the thermal expansion of the connector 50 and the thermal expansion of the conductor layer 70 becomes small. Therefore, even when the planar shape of the support surface 46 is a square or a rectangle such as a rectangle, the conductive adhesive 75 provided between the proximal end portion 45 of the connector 50 and the second conductor layer 72 (see FIG. 2)) is difficult to crack. Further, since the first semiconductor element 91 and the second semiconductor element 92 generate heat on the head portion 40 side of the connector 50, there is no such heat generation on the base end portion 45 side of the connector 50.
  • the conductive adhesive 75 provided between the base end portion 45 of the connector 50 and the second conductor layer 72 is hardly cracked.
  • the planar shape of the support surface 46 is rectangular, the size of the support surface 46 can be increased as much as possible, and the center of gravity can be more reliably positioned on the base end portion 45 side. From this point, it is beneficial to adopt an aspect in which the planar shape of the second convex portion 42 is an oval, while the planar shape of the support surface 46 is a rectangle.
  • the planar shape of the front electrode 92a of the second semiconductor element 92 and the planar shape of the first convex portion 41 may correspond to each other.
  • the planar shape of the front surface electrode 92a is rectangular and the planar shape of the second convex portion 42 is oval, the rectangular short side L1 of the front surface electrode 92a (see FIG. 10).
  • the elliptical minor axis R1 (see FIG. 3) of the second convex part 42 and / or the rectangular long side L2 of the front surface electrode 92a is the major axis of the elliptical part of the second convex part 42. It may correspond to R2 (see FIG. 3).
  • the long side L2 of the notched rectangle of the front electrode 92a may not correspond to the ellipse major axis R2 of the second convex portion 42, or The long side corresponding to the portion where the notch is not provided in the notched rectangle of the surface electrode 92a may correspond to the major axis R2 of the oval of the second convex portion 42.
  • “oval” in the present embodiment includes a shape having a straight portion and a semicircle or arc.
  • the area placed on the second conductor layer 72 of the base end portion 45 of the connector 50 is larger than the area placed on the second semiconductor element 92 of the head portion 40 of the connector 50. (See FIG. 3), as shown in FIG. 4 and FIG. 11, when the center of gravity of the connector 50 is located above the base end portion 45 of the connector 50, the connector 50 The head portion 40 can be prevented from tilting. For this reason, the heat generated from the first semiconductor element 91 and / or the second semiconductor element 92 can be efficiently transferred to the second conductor layer 72 and released.
  • the head portion 40 of the connector 50 is prevented from being tilted by adopting a mode in which the center of gravity of the connector 50 is located above the base end portion 45 of the connector 50. As a result, it is possible to prevent a decrease in reliability due to a decrease in the solder thickness of the peripheral portion of the head portion 40.
  • the head part 40 In the embodiment in which two or more semiconductor elements are stacked and the head part 40 is placed on the uppermost semiconductor element (second semiconductor element 92) as in the present embodiment, the head part and the base end part Since the center of gravity moves upward as compared with the aspect in which the two are positioned at the same or substantially the same height, the connector 50 becomes unstable.
  • the area of the base end portion 45 placed on the second conductor layer 72 is increased, and the center of gravity of the connector 50 is located above the base end portion 45 of the connector 50.
  • the conductive adhesive 75 can be positioned at a location where the first convex portion 41 is not provided, and a decrease in reliability can be prevented.
  • the first convex portion By setting the thickness (height) of the portion 41 to an appropriate value, the conductive adhesive 75 having an appropriate thickness can be provided between the head portion 40 and the front surface of the second semiconductor element 92.
  • the head portion 40 has a second convex portion 42 that protrudes toward the second semiconductor element 92, and the first convex portion 41 extends from the second convex portion 42 toward the second semiconductor element 92.
  • the thickness of the conductive adhesive 75 such as solder can be increased to a certain extent at a location where the first convex portion 41 is not provided, and the first convex portion 41 and the second convex portion 41 are further increased.
  • the thickness of the conductive adhesive 75 can be further increased at a location where the convex portion 42 is not provided.
  • the first convex portion By setting the thickness (height) of the portion 41 and the second convex portion 42 to appropriate values, the conductive adhesive 75 having an appropriate thickness is provided between the head portion 40 and the front surfaces of the semiconductor elements 91 and 92. Can be provided.
  • variety of a current path is securable by making the width
  • the base end portion 45 can contact the conductor layer 70 at the support surface 46 or can float in a well-balanced manner on the conductive adhesive 75 (before being cured).
  • the support surface 46 contacts the conductor layer 70, the balance of the connector 50 can be more reliably prevented from being lost.
  • the support surface 46 floats on the conductive adhesive 75, when the conductive adhesive 75 is hardened, the base end portion 45 and the conductor layer 70 can be bonded more reliably, and the conductive bond Since the thickness of the agent 75 can be ensured, the conductive adhesive 75 can be prevented from cracking.
  • the base end portion 45 is connected to the conductor layer 70 via a conductive adhesive 75 such as solder
  • the base end portion 45 is provided on the support surface 46 and the periphery of the support surface 46 as shown in FIG.
  • the conductive adhesive 75 can be put into the recess 47, and a fillet (for example, a solder ferret) by the conductive adhesive 75 can be easily formed. For this reason, it can prevent that the quantity of the conductive adhesive 75 becomes inadequate and a crack enters after the conductive adhesive 75 hardens
  • the base end portion 45 and the conductor layer 70 can be bonded by the conductive adhesive 75 by providing such a recess 47.
  • the conductive adhesive 75 can be bonded by the conductive adhesive 75 by providing such a recess 47.
  • the amount of the conductive adhesive 75 that can be applied to the front surface of the second semiconductor element 92 and the size of the head portion 40 that can be placed on the front surface of the second semiconductor element 92 there is a restriction on the amount of the conductive adhesive 75 that can be applied to the front surface of the second semiconductor element 92 and the size of the head portion 40 that can be placed on the front surface of the second semiconductor element 92.
  • the second convex portion 42 having a size (in the in-plane direction) of the conductive adhesive 75 and a necessary contact area, an appropriate contact area with the conductive adhesive 75 can be secured.
  • the amount of the conductive adhesive 75 can be made appropriate.
  • the planar shape of the front surface electrode 92a of the second semiconductor element 92 is a vertically long shape
  • the planar shape of the second convex portion 42 is an oval shape.
  • the width of the current path passing through the front electrode 92a and the second convex portion 42 is increased. It is beneficial in that it can be done.
  • the possibility that the head part 40 inclines can be reduced by making the planar shape of the 2nd convex part 42 into an ellipse.
  • an oval major axis is provided along the width direction of the head portion 40 (the vertical direction in FIG. 3)
  • it is advantageous in that the possibility that the head portion 40 is inclined in the width direction can be reduced.
  • the head portion 40 It is possible to prevent the head portion 40 from being inclined in the width direction by adopting a mode in which the first convex portion 41 is positioned at the center of the head portion 40 in the width direction (vertical direction in FIG. 3).
  • the first convex portion There is a possibility that the head portion 40 is inclined in the width direction around the portion 41.
  • the first convex portion 41 is positioned on the root side, the straight section 41 a having a straight vertical cross-sectional shape, and positioned on the tip side of the straight section 41 a, and having a vertical cross-sectional shape.
  • the diameter in hemispherical part 41b can be made small.
  • the front surface of the second semiconductor element 92 can be brought into contact with each other.
  • the conductive adhesive 75 is cracked when cured. Can be prevented from occurring.
  • the conductive adhesive 75 can be increased on the tip side. For this reason, it is possible to prevent the occurrence of problems such as cracks in the conductive adhesive 75 when cured on the tip side close to the second semiconductor element 92. Further, since the amount of the conductive adhesive 75 can be gradually increased toward the distal end side, the conductive adhesive 75 can be positioned evenly and reliably around the first convex portion 41.
  • the linear part 41a may be cylindrical.
  • Substrate 40 Head part 41 First convex part 42 Second convex part 45 Base end part 46 Support surface 47 Concave part 48 Bent part 50 Connector 70 Conductor layer 71 First conductor layer 72 Second conductor layer 75 Conductive adhesive 91 First One semiconductor device (first electronic device) 92 Second semiconductor element (second electronic element) 92a First front surface electrode (front surface electrode) 92b Second front surface electrode (front surface electrode) 93 Third semiconductor element (third electronic element)

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Abstract

電子装置は、基板５と、第一導体層７１に設けられた第一電子素子９１と、前記第一電子素子９１に設けられた第二電子素子９２と、第二導体層７２に設けられた基端部４５と、前記第二電子素子９２のおもて面電極９２ａに導電性接着剤７５を介して接続されたヘッド部４０とを有する接続子５０と、を有している。前記基端部４５の前記第二導体層７２上に載置される面積は、前記ヘッド部４０の前記第二電子素子９２上に載置される面積よりも大きくなる。前記基端部４５は前記ヘッド部４０よりも基板５側に位置付けられ、前記接続子５０の重心位置が前記接続子５０の前記基端部４５側にある。

Description

電子装置
　本発明は、電子装置に関する。
　従来から、２段以上重ねた電子素子を含み、封止樹脂等の封止部で封止された電子装置が知られている。このように電子素子を２段以上重ねた場合には、電子素子と導体層とを複数のワイヤで接続する態様が用いられていた。しかしながら、上方の電子素子が発熱した場合の放熱は、ワイヤ又は下方の電子素子を介して行われることから下方の電子素子に比べて十分なものではなかった。
　この点、放熱性を高めるために、電子素子の間にインターポーザを設けることが提案されている（例えば、特開２０１３－２２２９０５参照）。しかしながら、このようなインターポーザを設けることは一つ余分な部材が必要となることから、このような部材を設けることなく、簡易な構成で放熱性を高めることが期待されていた。
　このような点に鑑み、本発明は、電子素子からの発熱を効率よく放熱できる電子装置を提供する。
　本発明による電子装置は、
　基板と、
　前記基板に設けられた第一導体層及び第二導体層を有する導体層と、
　前記第一導体層に設けられた第一電子素子と、
　前記第一電子素子に設けられた第二電子素子と、
　前記第二導体層に設けられた基端部と、前記基端部と一体に形成され、前記第二電子素子のおもて面電極に導電性接着剤を介して接続されたヘッド部とを有する接続子と、
　を備え、
　前記基端部の前記第二導体層に載置される面積が、前記ヘッド部の前記第二電子素子に載置される面積よりも大きくなり、
　前記基端部が前記ヘッド部よりも前記基板側に位置付けられ、前記接続子の重心位置が前記接続子の前記基端部側にある。
　本発明による電子装置において、
　前記第一電子素子及び前記第二電子素子はパワー半導体素子であり、
　前記第一電子素子の発熱量は前記第二電子素子の発熱量よりも大きくてもよい。
　本発明による電子装置は、
　前記第一電子素子の上方に設けられ、前記第二電子素子の下方に設けられる１つ以上の第三電子素子をさらに備えてもよい。
　本発明による電子装置において、
　前記ヘッド部は、前記第二電子素子側に突出した第二凸部と、前記第二凸部から前記第二電子素子側に突出した第一凸部とを有してもよい。
　本発明による電子装置において、
　前記ヘッド部は、前記第二電子素子側に突出した第二凸部を有し、
　前記基端部は支持面を有し、
　前記第二凸部の平面形状は長円形であり、
　前記支持面の平面形状は矩形であってもよい。
　本発明による電子装置において、
　前記基端部は、支持面と、前記支持面の周縁に設けられた凹部と、を有してもよい。
　本発明による電子装置において、
　前記基端部は、おもて面側に曲がって延びた屈曲部を有し、
　前記凹部は、少なくとも前記屈曲部までおもて面側に延びてもよい。
　本発明では、接続子の基端部の第二導体層上に載置される面積が、接続子のヘッド部の第二電子素子上に載置される面積よりも大きくなっている。また、接続子の重心位置が接続子の基端部の上方にあることから、接続子のヘッド部が傾くことを防止できる。これらのことから、第一電子素子又は第二電子素子から出た熱を第二導体層へと安定した状態で効率よく伝達して逃がすことができる。
　また、前述したように接続子の重心位置が接続子の基端部の上方にあることから、接続子のヘッド部が傾くことを防止でき、その結果、ヘッド部での周縁部の導電性接着剤の厚さが薄くなることによる信頼性の低下を防止できる。
図１は、本発明の実施の形態による半導体装置の斜視図である。 図２は、本発明の実施の形態による半導体装置の一部を拡大した側方図である。 図３は、本発明の実施の形態で用いられる接続子を示した底面図である。 図４は、本発明の実施の形態で用いられる接続子を示した斜視図である。 図５は、本発明の第１の実施の形態で用いられる第一凸部の一態様を示した側方図である。 図６は、本発明の第１の実施の形態で用いられる第一凸部の別の態様を示した側方図である。 図７（ａ）は、第三半導体素子が１つだけ設けられた態様を示した側方断面図であり、図７（ｂ）は、第三半導体素子が２つ設けられた態様を示した側方断面図である。 図８は、本発明の実施の形態で用いられる接続子の一変形例を示した底面図である。 図９は、本発明の実施の形態で用いられる接続子の別の変形例を示した底面図である。 図１０は、本発明の実施の形態で用いられる第二半導体素子のおもて面電極の形状を説明するための平面図である。 図１１は、本発明の実施の形態による半導体装置の側方図である。
実施の形態
《構成》
　図１に示すように、本実施の形態の電子装置の一例である半導体装置は、例えば絶縁性材料からなる基板５と、基板５上に設けられ、銅等からなる導体層７０と、を有してもよい。基板５の裏面には、銅等からなる放熱板７９が設けられてもよい。半導体装置は、封止樹脂等からなる封止部８０（図１１参照）と、封止部８０内に設けられた電子素子の一例である半導体素子９１，９２と、を有してもよい。封止部８０からは導体層７０に接続された端子（図示せず）が外部に突出していてもよい。
　導体層７０は、基板５上に設けられた第一導体層７１及び第二導体層７２を有してもよい。また、半導体素子９１，９２は、第一導体層７１上に設けられ、第一電子素子の一例である第一半導体素子９１と、第一半導体素子９１の上方に設けられ、第二電子素子の一例である第二半導体素子９２と、を有してもよい。本実施の形態では、電子装置として半導体装置を用い、第一電子素子として第一半導体素子９１を用い、第二電子素子として第二半導体素子９２を用いた態様を用いて説明するが、これに限られるものではなく、特に半導体である必要はない。
　図２に示すように、半導体装置は、第二導体層７２にはんだ等の導電性接着剤７５を介して設けられた基端部４５と、基端部４５と一体に形成され、第二半導体素子９２のおもて面に導電性接着剤７５を介して設けられたヘッド部４０とを有する接続子５０を有してもよい。第一半導体素子９１の裏面と第一導体層７１及び第二半導体素子９２の裏面と第一半導体素子９１のおもて面とは、はんだ等の導電性接着剤７５を介して接続されてもよい。
　基端部４５の第二導体層７２上に載置される面積は、ヘッド部４０の第二半導体素子９２上に載置される面積よりも大きくなってもよい。一例としては、基端部４５の第二導体層７２上に載置される面積は後述する支持面４６の面積であり、ヘッド部４０の第二半導体素子９２上に載置される面積は後述する第二凸部４２の面積である。基端部４５はヘッド部４０よりも下方（基板５側）に位置付けられ、接続子５０の重心位置が接続子５０の基端部４５側にあってもよい（図４及び図１１参照）。なお、図１１に示した半球状の凸部は、シュミレーションした結果、算出された重心の位置を示している。
　第一半導体素子９１はカスコード接続されるスイッチング素子であり、第二半導体素子９２は制御素子であってもよい。この場合には、スイッチング素子の発熱量は、制御素子の発熱量よりも大きくなっていてもよい。一例としては、第一半導体素子９１は炭化ケイ素パワーデバイス又は窒化ガリウムパワーデバイスであり、第二半導体素子９２はＭＯＳＦＥＴであってもよい。また、第二半導体素子９２は、集積回路、スイッチング素子又は整流素子であってもよい。図１に示すように、導体層７０は第三導体層７３を有してもよい。この第三導体層７３は、一例として、第二半導体素子９２がスイッチング素子の場合に利用されることになる。また、第一半導体素子９１及び第二半導体素子９２の各々はパワー半導体素子であってもよい。
　本実施の形態のような接続子５０を用いることで、配線抵抗を小さくすることができる。なお、一般的にワイヤはアルミから形成されているが、接続子５０は銅を含む材料（銅のみを含む。）で形成することができる。このように銅を含む材料を採用することで、配線抵抗をさらに小さくすることができ、ひいては、スイッチング素子から出されるノイズを低減できる。特に第一半導体素子９１がカスコード接続されるスイッチング素子（炭化ケイ素パワーデバイス又は窒化ガリウムパワーデバイス）である場合には、スイッチの切り替え速度が高速となるので、ノイズの影響が大きくなる傾向にある。この点、銅を含む材料からなる接続子５０を採用することで、前述したノイズの影響を減らすことができる。また、配線抵抗を小さくできる分、スイッチング素子の切り替え速度を遅くしても電流が流れることになり、この結果からもノイズの発生を低減できる。
　また、図７（ａ）（ｂ）に示すように、半導体素子（電子素子）は３段以上に積み重ねられてもよく、第一半導体素子９１の上方に設けられ、第二半導体素子９２の下方に設けられる１つ以上の第三半導体素子（第三電子素子）９３が設けられてもよい。このように３段以上となった場合には熱がより籠りやすくなる。このため、本実施の形態の接続子５０を採用することの技術的意義は大きくなる。図７（ａ）では、第三半導体素子９３が１つだけ設けられた態様を示しており、図７（ｂ）では、第三半導体素子９３ａ，９３ｂが２つ設けられた態様を示している。これらに限られることはなく、第三半導体素子は３つ以上設けられてもよい。
　図３に示すように、ヘッド部４０は、第二半導体素子９２側に突出する第一凸部４１を有してもよい。第一凸部４１は、導電性接着剤７５に対して沈み込み、第二半導体素子９２のおもて面に点で接触してもよい。基端部４５は、導体層７０に接触する又は導体層７０上の導電性接着剤７５に設けられる支持面４６を有してもよい。
　ヘッド部４０は、図３に示すように、第一凸部４１の他に第二半導体素子９２側に突出する第二凸部４２を有してもよいし、図８に示すように、第二凸部４２だけを有し第一凸部４１を有さなくてもよい。また、図９に示すように、第一凸部４１だけを有し第二凸部４２を有さなくてもよい。ヘッド部４０が第一凸部４１及び第二凸部４２を有する場合には、第二凸部４２から第二半導体素子９２側に第一凸部４１が突出することになる。
　図３に示すように、基端部４５は、支持面４６の周縁に設けられた凹部４７を有してもよい。凹部４７は、支持面４６の全体を取り囲むように設けられてもよいが、図３に示すように、支持面４６のうち、基端側の３辺を連続的に取り囲むようにして形成されてもよい。また、凹部４７は、支持面４６を連続的にではなく断続的に取り囲むように形成されてもよい。また、基端部４５はおもて面側（図４の上方側）に曲がって延びた屈曲部４８を有してもよい。凹部４７は、支持面４６からおもて面側に延びた屈曲部４８に沿っておもて面側に延びてもよい。このように凹部４７が屈曲部４８に沿っておもて面側に延びている態様を採用した場合には、屈曲部４８に設けられた凹部４７に沿って導電性接着剤７５を設けることができ、フェレットを形成しやすくなる点で有益である。
　また、屈曲部４８に凹部４７の先端（上端）が設けられている場合には、屈曲部４８を形成する際に凹部４７の形状が潰れてしまうことがある。この点、図４に示すように、屈曲部４８よりも高い位置に凹部４７の端部を位置づけることで、屈曲部４８を形成する際に凹部４７の形状が潰れてしまうことを未然に防止できる。
　基端部４５の幅方向（図３の上下方向）の中心とヘッド部４０の幅方向の中心とを結んだ直線を第一方向（図３の左右方向）とした場合に、支持面４６の第一方向に沿った長さは第二凸部４２の第一方向に沿った長さよりも長くなっていてもよい（図３参照）。一例としては、支持面４６の第一方向に沿った長さは第二凸部４２の第一方向に沿った長さの２倍～３倍となってもよい。
　第一凸部４１は、ヘッド部４０の幅方向の中心に位置付けられてもよい。
　第二半導体素子９２のおもて面電極のうち、ヘッド部４０と接続される第一おもて面電極９２ａの平面形状は縦長形状となっていてもよく、一例としては長方形となってもよいし、図１０に示すように、第二おもて面電極９２ｂが設けられる部分だけ凹んだ切欠き付き長方形となってもよい。第二おもて面電極９２ｂは、例えば第二半導体素子９２がスイッチング素子である場合に利用される。封止部８０から外部に出ている制御端子（図示せず）が第三導体層７３に接続され、この第三導体層７３にワイヤ１９（図１参照）を介して第二おもて面電極９２ｂが接続されてもよい。この制御端子は、第二半導体素子９２を制御するために用いられてもよい。
　図３に示すように、第二凸部４２の平面形状は長円形となってもよい。また、支持面４６の平面形状は矩形になってもよい。第二半導体素子９２のおもて面電極９２ａの平面形状に合わせて、第二凸部４２の平面形状を長方形又は切欠き付き長方形とすることも考えられるが、角を有する形状を採用すると、第二凸部４２と第二半導体素子９２との間に設けられた導電性接着剤７５（図２参照）にクラックが入る可能性がある。この点、第二凸部４２の平面形状を長円形とすることで、第二凸部４２と第二半導体素子９２との間に設けられた導電性接着剤７５にクラックが入ることを未然に防止できる。
　なお、接続子５０が銅を含む材料（銅のみを含む。）からなり、導体層７０も銅を含む材料（銅のみを含む。）からなる場合のように、接続子５０と導体層７０とが同じ材料又は実質同じ材料からなる場合には、接続子５０の熱膨張と導体層７０の熱膨張との差が小さくなる。このため、支持面４６の平面形状が正方形又は長方形のような矩形となる場合でも、接続子５０の基端部４５と第二導体層７２との間に設けられた導電性接着剤７５（図２参照）にクラックは入り難い。また、接続子５０のヘッド部４０側では第一半導体素子９１及び第二半導体素子９２が発熱するのに対して、接続子５０の基端部４５側ではそのような発熱がないことから、その意味でも、接続子５０の基端部４５と第二導体層７２との間に設けられた導電性接着剤７５にクラックは入り難い。他方、支持面４６の平面形状を矩形とすることで、支持面４６の大きさを極力大きくすることができ、より確実に基端部４５側に重心を位置づけることができるようになる。この点から、第二凸部４２の平面形状を長円形とし、他方、支持面４６の平面形状を矩形とする態様を採用することは有益である。
　第二半導体素子９２のおもて面電極９２ａの平面形状と第一凸部４１の平面形状とは対応するようになってもよい。例えば、おもて面電極９２ａの平面形状が長方形となり、第二凸部４２の平面形状が長円形となっている場合には、おもて面電極９２ａの長方形の短辺Ｌ１（図１０参照）が第二凸部４２の長円形の短径Ｒ１（図３参照）に対応し、及び／又は、おもて面電極９２ａの長方形の長辺Ｌ２が第二凸部４２の長円形の長径Ｒ２（図３参照）に対応してもよい。ここで「対応」するとは、全体の長さの±５％の範囲になっていることを意味し、Ｌ１＝（１±０．１）×Ｒ１となり、Ｌ２＝（１±０．１）×Ｒ２となることを意味している。図１０に示すように第二おもて面電極９２ｂが切欠き付き長方形となっている場合には、おもて面電極９２ａの切欠き付き長方形の短辺Ｌ１が第二凸部４２の長円形の短径Ｒ１に対応し、おもて面電極９２ａの切欠き付き長方形の長辺Ｌ２は第二凸部４２の長円形の長径Ｒ２に対応していなくてもよいし、又は、おもて面電極９２ａの切欠き付き長方形のうち切欠きが設けられていない箇所に対応する長辺が第二凸部４２の長円形の長径Ｒ２に対応してもよい。なお、本実施の形態における「長円形」には、図３に示されるように、直線部分と半円形又は円弧とを有する形状も含まれている。
《作用・効果》
　次に、上述した構成からなる本実施の形態による作用・効果のうち、まだ説明していないものを中心に説明する。
　本実施の形態において、接続子５０の基端部４５の第二導体層７２上に載置される面積が、接続子５０のヘッド部４０の第二半導体素子９２上に載置される面積よりも大きくなり（図３参照）、図４及び図１１に示すように、接続子５０の重心位置が接続子５０の基端部４５の上方にある態様を採用した場合には、接続子５０のヘッド部４０が傾くことを防止できる。このため、第一半導体素子９１及び／又は第二半導体素子９２から出た熱を第二導体層７２へと安定した状態で効率よく伝達して逃がすことができる。
　また、図４及び図１１に示すように、接続子５０の重心位置が接続子５０の基端部４５の上方にある態様を採用することで、接続子５０のヘッド部４０が傾くことを防止でき、その結果、ヘッド部４０での周縁部のはんだ厚が薄くなることによる信頼性の低下を防止できる。
　本実施の形態のように、２つ以上の半導体素子が積み重ねられ、最も上方に位置する半導体素子（第二半導体素子９２）にヘッド部４０が載置される態様では、ヘッド部と基端部とが同一又は実質同一の高さに位置する態様と比較して、重心が上方に移動することから、接続子５０が不安定になる。この点、本実施の形態のように、基端部４５の第二導体層７２上に載置される面積を大きくし、接続子５０の重心位置が接続子５０の基端部４５の上方にある態様とすることで、接続子５０が不安定になることを極力防止できる。
　また、第一凸部４１を採用することで、第一凸部４１が設けられていない箇所に導電性接着剤７５を位置付けることができ、信頼性の低下を防止できる。特に接続子５０の重さによってヘッド部４０が導電性接着剤７５に対して沈み込み、第一凸部４１と第二半導体素子９２のおもて面とが接触する態様においては、第一凸部４１の厚み（高さ）を適切な値にすることで、ヘッド部４０と第二半導体素子９２のおもて面との間に適切な厚みの導電性接着剤７５を設けることができる。
　また、図３に示すように、ヘッド部４０が第二半導体素子９２側に突出する第二凸部４２を有し、第一凸部４１が第二凸部４２から第二半導体素子９２側に突出する態様を採用した場合には、第一凸部４１が設けられていない箇所ではんだ等の導電性接着剤７５の厚みを一定程度厚くすることができ、さらに第一凸部４１及び第二凸部４２が設けられていない箇所で導電性接着剤７５の厚みをさらに厚くすることができる。特に接続子５０の重さによってヘッド部４０が導電性接着剤７５に対して沈み込み、第一凸部４１と第二半導体素子９２のおもて面とが接触する態様においては、第一凸部４１及び第二凸部４２の厚み（高さ）を適切な値にすることで、ヘッド部４０と半導体素子９１，９２のおもて面との間に適切な厚みの導電性接着剤７５を設けることができる。また、第二凸部４２の幅を適切な値にすることで、電流経路の幅を確保することができる。
　基端部４５は、支持面４６で導体層７０に接触するか又は（硬化する前の）導電性接着剤７５にバランスよく浮くことができる。支持面４６が導体層７０に接触する場合には、より確実に、接続子５０のバランスが崩れることを防止できる。他方、支持面４６が導電性接着剤７５に浮いている場合には、導電性接着剤７５が固まったときに、基端部４５と導体層７０とをより確実に接着できるし、導電性接着剤７５の厚みを確保できることから、導電性接着剤７５にクラックが入ることを防止できる。
　基端部４５が導体層７０にはんだ等の導電性接着剤７５を介して接続される態様において、基端部４５が、図３に示すように、支持面４６と、支持面４６の周縁に設けられた凹部４７とを有する態様を採用した場合には、凹部４７に導電性接着剤７５を入れ込むことができ、導電性接着剤７５によるフィレット（例えばはんだフェレット）を形成しやすくできる。このため、導電性接着剤７５の量が不十分となって、導電性接着剤７５が硬化した後で、クラックが入ってしまうことを防止できる。特に支持面４６が導体層７０に接触するほど接続子５０が重い場合には、このような凹部４７を設けることで、導電性接着剤７５によって基端部４５と導体層７０とを接着できる点で有益である。また、このような場合には、図４に示すように、凹部４７が屈曲部４８に沿っておもて面側に延びている態様を採用することも有益である。この態様を採用することで、より厚みの厚い導電性接着剤７５によってフィレットを形成できるためである。
　また、第二半導体素子９２のおもて面に塗布できる導電性接着剤７５の量や、第二半導体素子９２のおもて面に載置できるヘッド部４０の大きさに制約がある。この点、導電性接着剤７５と必要な接触面積分だけの（面内方向の）大きさからなる第二凸部４２を設けることで、導電性接着剤７５との適切な接触面積を確保でき、導電性接着剤７５の量を適切なものにすることができる。
　また、図３に示すように、第二半導体素子９２のおもて面電極９２ａの平面形状が縦長形状となり、第二凸部４２の平面形状が長円形となっている場合であって、おもて面電極９２ａの長手方向に沿って第二凸部４２の長円形の長辺が設けられる場合には、おもて面電極９２ａと第二凸部４２を通過する電流経路の幅を広くすることができる点で有益である。また、第二凸部４２の平面形状を長円形とすることで、ヘッド部４０が傾く可能性を低減できる。特に、ヘッド部４０の幅方向（図３の上下方向）に沿って長円形の長径が設けられる態様では、ヘッド部４０が幅方向で傾く可能性を低減できる点で有益である。
　第一凸部４１がヘッド部４０の幅方向（図３の上下方向）の中心に位置付けられる態様を採用することによっても、ヘッド部４０が幅方向で傾くことを防止できる。特に接続子５０の重さによってヘッド部４０が導電性接着剤７５に対して沈み込み、第一凸部４１と第二半導体素子９２のおもて面とが接触する態様においては、第一凸部４１を中心として幅方向でヘッド部４０が傾いてしまう可能性がある。この点、本態様を採用することで、幅方向でヘッド部４０が傾いてしまう可能性を低減できる。
　図５及び図６に示すように、第一凸部４１が、その根元側に位置し、縦断面形状が直線となった直線部４１ａと、直線部４１ａの先端側に位置し、縦断面形状が半球又は円弧となった半球形状部４１ｂとを有する態様を採用した場合には、半球形状部４１ｂにおける径を小さくことができる。このため、ヘッド部４０が導電性接着剤７５に沈み込んで第一凸部４１が第二半導体素子９２のおもて面と接触する場合でも、より小さな面積（点）で第一凸部４１と第二半導体素子９２のおもて面とを接触させることができる。この結果、ヘッド部４０と第二半導体素子９２のおもて面との間に位置する導電性接着剤７５を増やすことができ、ひいては、硬化した際に導電性接着剤７５にクラックが入る等の不具合が発生することを未然に防止できる。
　図６に示すように、直線部４１ａとして先端に向かって幅の狭くなったテーパー状となっている態様を採用した場合には、先端側で導電性接着剤７５を増やすことができる。このため、第二半導体素子９２に近い先端側において、硬化した際に導電性接着剤７５にクラックが入る等の不具合が発生することを未然に防止できる。また、先端側に向かって徐々に導電性接着剤７５の量を増やすことができるので、第一凸部４１の周りに均等かつ確実に導電性接着剤７５を位置付けることができる。このため、接続子５０の重さによってヘッド部４０が導電性接着剤７５に対して沈み込み、第一凸部４１と半導体素子９１，９２のおもて面とが接触する態様であっても、ヘッド部４０が傾いてしまう可能性を低減できる。なお、図５に示すように、直線部４１ａは円柱形状となっていてもよい。
　最後になったが、上述した実施の形態の記載及び図面の開示は、請求の範囲に記載された発明を説明するための一例に過ぎず、上述した実施の形態の記載又は図面の開示によって請求の範囲に記載された発明が限定されることはない。また、出願当初の請求項の記載はあくまでも一例であり、明細書、図面等の記載に基づき、請求項の記載を適宜変更することもできる。
５　　　　　基板
４０　　　　ヘッド部
４１　　　　第一凸部
４２　　　　第二凸部
４５　　　　基端部
４６　　　　支持面
４７　　　　凹部
４８　　　　屈曲部
５０　　　　接続子
７０　　　　導体層
７１　　　　第一導体層
７２　　　　第二導体層
７５　　　　導電性接着剤
９１　　　　第一半導体素子（第一電子素子）
９２　　　　第二半導体素子（第二電子素子）
９２ａ　　　第一おもて面電極（おもて面電極）
９２ｂ　　　第二おもて面電極（おもて面電極）
９３　　　　第三半導体素子（第三電子素子）
 

Claims (7)

  1. 　基板と、
    　前記基板に設けられた第一導体層及び第二導体層を有する導体層と、
    　前記第一導体層に設けられた第一電子素子と、
    　前記第一電子素子に設けられた第二電子素子と、
    　前記第二導体層に設けられた基端部と、前記基端部と一体に形成され、前記第二電子素子のおもて面電極に導電性接着剤を介して接続されたヘッド部とを有する接続子と、
    　を備え、
    　前記基端部の前記第二導体層に載置される面積は、前記ヘッド部の前記第二電子素子に載置される面積よりも大きくなり、
    　前記基端部は前記ヘッド部よりも前記基板側に位置付けられ、前記接続子の重心位置が前記接続子の前記基端部側にあることを特徴とする電子装置。
  2. 　前記第一電子素子及び前記第二電子素子はパワー半導体素子であり、
    　前記第一電子素子の発熱量は前記第二電子素子の発熱量よりも大きいことを特徴とする請求項１に記載の電子装置。
  3. 　前記第一電子素子の上方に設けられ、前記第二電子素子の下方に設けられる１つ以上の第三電子素子をさらに備えることを特徴とする請求項１又は２のいずれかに記載の電子装置。
  4. 　前記ヘッド部は、前記第二電子素子側に突出した第二凸部と、前記第二凸部から前記第二電子素子側に突出した第一凸部とを有していることを特徴とする請求項１乃至３のいずれか１項に記載の電子装置。
  5. 　前記ヘッド部は、前記第二電子素子側に突出した第二凸部を有し、
    　前記基端部は支持面を有し、
    　前記第二凸部の平面形状は長円形であり、
    　前記支持面の平面形状は矩形であることを特徴とする請求項１乃至４のいずれか１項に記載の電子装置。
  6. 　前記基端部は、支持面と、前記支持面の周縁に設けられた凹部と、を有することを特徴とする請求項１乃至５のいずれか１項に記載の電子装置。
  7. 　前記基端部は、おもて面側に曲がって延びた屈曲部を有し、
    　前記凹部は、少なくとも前記屈曲部までおもて面側に延びていることを特徴とする請求項６に記載の電子装置。
     
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