US20190051577A1 - Electronic device - Google Patents
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- US20190051577A1 US20190051577A1 US15/570,864 US201715570864A US2019051577A1 US 20190051577 A1 US20190051577 A1 US 20190051577A1 US 201715570864 A US201715570864 A US 201715570864A US 2019051577 A1 US2019051577 A1 US 2019051577A1
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- electric element
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- H—ELECTRICITY
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Definitions
- the present invention relates to an electronic device.
- an electronic device that includes an electric element stacked in two or more stages, and is sealed with a sealing part such as a sealing resin.
- a sealing part such as a sealing resin.
- the present invention provides an electronic device that can efficiently dissipate heat generated from an electric element.
- An electronic device comprises:
- the electronic device may further comprise one or more third electric elements provided above the first electric element and provided below the second electric element.
- the area of the base end part of the connector placed on the second conductor layer is larger than the area of the head part of the connector placed on the second semiconductor element. Further, the gravity center position of the connector is above the base end part of the connector, and therefore an inclination of the head part of the connector can be prevented. Due to these matters, heat generated from the first electric element or the second electric element can be efficiently transmitted and escaped to the second conductor layer in a stable state.
- FIG. 1 is a perspective view of a semiconductor device according to an embodiment of the present invention.
- FIG. 2 is a side view enlarging a part of a semiconductor device according to the embodiment of the present invention.
- FIG. 3 is a bottom view showing a connector used in the embodiment of the present invention.
- FIG. 4 is a perspective view showing a connector used in the embodiment of the present invention.
- FIG. 5 is a side view showing one aspect of a first projection used in a first embodiment of the present invention.
- FIG. 6 is a side view showing another aspect of the first projection used in the first embodiment of the present invention.
- FIG. 7( a ) is a side cross-sectional view showing an aspect in which only one piece of third semiconductor element is provided
- FIG. 7( b ) is a side cross-sectional view showing an aspect in which two pieces of the third semiconductor elements are provided.
- FIG. 8 is a bottom view showing one modification of a connector used in the embodiment of the present invention.
- FIG. 9 is a bottom view showing another modification of a connector used in the embodiment of the present invention.
- FIG. 10 is a plan view for describing a shape of a front surface electrode of a second semiconductor element used in the embodiment of the present invention.
- FIG. 11 is a side view of a semiconductor device according to the embodiment of the present invention.
- a semiconductor device as an example of an electronic device of this embodiment may have a substrate 5 made of an insulating material for example, and a conductor layer 70 provided on the substrate 5 and made of copper or the like. A rear surface of the substrate 5 may be provided with a heat radiating plate 79 made of copper or the like.
- the semiconductor device may have a sealing part 80 (see FIG. 11 ) made of a sealing resin or the like, and semiconductor elements 91 and 92 as an example of electric elements provided in the sealing part 80 .
- a terminal (not shown) connected to the conductor layer 70 may protrude outside from the sealing part 80 .
- the conductor layer 70 may have a first conductor layer 71 and a second conductor layer 72 , provided on the substrate 5 .
- the semiconductor elements 91 and 92 may have a first semiconductor element 91 provided on the first conductor layer 71 , as an example of a first electric element, and a second semiconductor element 92 provided above the first semiconductor element 91 , as an example of a second electric element.
- the present invention is not limited to this, and especially a semiconductor is not required to be used.
- the semiconductor device may have a connector 50 having a base end part 45 provided on the second conductor layer 72 via a conductive adhesive 75 such as solder, and a head part 40 integrally formed with the base end part 45 and provided on a front surface of the second semiconductor element 92 via a conductive adhesive 75 .
- a conductive adhesive 75 such as solder
- An area of the base end part 45 placed on the second conductor layer 72 may be larger than the area of the head part 40 placed on the second semiconductor element 92 .
- the area of the base end part 45 placed on the second conductor layer 72 is an area of a supporting surface 46 described later, and the area of the head part 40 placed on the second semiconductor element 92 is an area of a second projection 42 described later.
- the base end part 45 may be located lower than the head part 40 (at a side of the substrate 5 ), and a gravity center position of the connector 50 may be at a side of the base end part 45 of the connector 50 (see FIGS. 4 and 11 ).
- a hemispherical projection shown in FIG. 11 indicates a position of the center of gravity calculated as a result of simulation.
- the first semiconductor element 91 may be a cascode-connected switching element, and the second semiconductor element 92 may be a control element. In this case, a heating amount of the switching element may be larger than a heating amount of the control element.
- the first semiconductor element 91 may be a silicon carbide power device or a gallium nitride power device, and the second semiconductor element 92 may be a MOSFET.
- the second semiconductor element 92 may be an integrated circuit, a switching element, or a rectifier element.
- the conductor layer 70 may have a third conductor layer 73 . As an example, the third conductor layer 73 is used when the second semiconductor element 92 is a switching element.
- each of the first semiconductor element 91 and the second semiconductor element 92 may be a power semiconductor element.
- the connector 50 allows a wiring resistance to be reduced. While the wire is generally made of aluminum, the connector 50 can be formed of a material including copper (including only copper). Adopting the material including copper in this way allows further reduction of the wiring resistance, enabling reduction of noise emitted from the switching element.
- the first semiconductor element 91 is a cascode-connected switching element (a silicon carbide power device or a gallium nitride power device)
- a switching speed of the switch is high, influence of noise tends to be increased.
- adopting the connector 50 made of the material including copper enables reduction of influence of noise as described above.
- the semiconductor elements may be stacked in three or more, and there may be provided one or more third semiconductor elements (third electric elements) 93 provided above the first semiconductor element 91 and provided below the second semiconductor element 92 .
- third semiconductor elements third electric elements
- FIG. 7( a ) shows an aspect in which only one piece of the third semiconductor element 93 is provided
- FIG. 7( b ) shows an aspect in which two pieces of the third semiconductor elements 93 a and 93 b are provided.
- the number of the third semiconductor element is not limited to this, but may be three or more.
- the head part 40 may have a first projection 41 protruding toward the second semiconductor element 92 side.
- the first projection 41 may sink into the conductive adhesive 75 and contact with the front surface of the second semiconductor element 92 at a point.
- the base end part 45 may have the supporting surface 46 that is in contact with the conductor layer 70 or is provided on the conductive adhesive 75 on the conductor layer 70 .
- the head part 40 may have the second projection 42 protruding toward the second semiconductor element 92 side, in addition to the first projection 41 , or may have only the second projection 42 without having the first projection 41 , as shown in FIG. 8 . Further, as shown in FIG. 9 , the head part 40 may have only the first projection 41 without having the second projection 42 . When the head part 40 has the first projection 41 and the second projection 42 , the first projection 41 protrudes from the second projection 42 toward the second semiconductor element 92 side.
- the base end part 45 may have a recess 47 provided on a periphery of the supporting surface 46 .
- the recess 47 may be provided to surround the entire supporting surface 46 , or may be formed to continuously surround three sides of the supporting surface 46 on the base end side, as shown in FIG. 3 . Additionally, the recess 47 may be formed to intermittently, not continuously, surround the supporting surface 46 .
- the base end part 45 may have a bent part 48 being bent and extending toward the front surface side (an upper side in FIG. 4 ). The recess 47 may extend to the front surface side along the bent part 48 extending from the supporting surface 46 to the front surface side.
- the conductive adhesive 75 can be provided along the recess 47 provided to the bent part 48 , and a ferret can be easily formed.
- a shape of the recess 47 may be collapsed when the bent part 48 is formed.
- positioning an end part of the recess 47 at a position higher than the bent part 48 can prevent in advance the shape of the recess 47 from being collapsed when the bent part 48 is formed.
- a length of the supporting surface 46 along the first direction may be longer than a length of the second projection 42 along the first direction (see FIG. 3 ).
- the length of the supporting surface 46 along the first direction may be twice to three times as long as the length of the second projection 42 along the first direction.
- the first projection 41 may be positioned at a center in the width direction of the head part 40 .
- a first front surface electrode 92 a connected to the head part 40 may be a vertically long shape in a planar shape.
- the planar shape may be a rectangular shape, or may be a notched rectangular shape in which only a part provided with a second front surface electrode 92 b is recessed, as shown in FIG. 10 .
- the second front surface electrode 92 b is used, for example, when the second semiconductor element 92 is a switching element.
- a control terminal (not shown) extending from the sealing part 80 to outside may be connected to the third conductor layer 73 , and the third conductor layer 73 may be connected with the second front surface electrode 92 b via a wire 19 (see FIG. 1 ). This control terminal may be used to control the second semiconductor element 92 .
- a planar shape of the second projection 42 may be an oval shape.
- a planar shape of the supporting surface 46 may be a rectangular shape.
- adapting a shape having a corner may cause a crack in the conductive adhesive 75 (see FIG. 2 ) provided between the second projection 42 and the second semiconductor element 92 .
- forming the planar shape of the second projection 42 into oval can prevent cracks in the conductive adhesive 75 provided between the second projection 42 and the second semiconductor element 92 , in advance.
- the connector 50 is made of the material including copper (including only copper) and the conductor layer 70 is also made of the material including copper (including only copper)
- the connector 50 and the conductor layer 70 are made of a same material or substantially same material
- a difference between thermal expansion of the connector 50 and thermal expansion of the conductor layer 70 becomes small. Therefore, even when the planar shape of the supporting surface 46 is rectangular such as a square or a rectangle, cracks are not easily generated in the conductive adhesive 75 (see FIG. 2 ) provided between the base end part 45 of the connector 50 and the second conductor layer 72 .
- the first semiconductor element 91 and the second semiconductor element 92 generate heat on the head part 40 side of the connector 50 , there is no such heat generation on the base end part 45 side of the connector 50 . In that sense as well, cracks are not easily generated in the conductive adhesive 75 provided between the base end part 45 of the connector 50 and the second conductor layer 72 .
- forming the planar shape of the supporting surface 46 into rectangular allows a size of the supporting surface 46 to be made as large as possible, allowing the center of gravity to be more reliably positioned on the base end part 45 side. From this point, it is advantageous to adopt the aspect in which the planar shape of the second projection 42 is oval, whereas the planar shape of the supporting surface 46 is rectangular.
- the planar shape of the front surface electrode 92 a of the second semiconductor element 92 may correspond to the planar shape of the first projection 41 .
- a short side L 1 of the rectangle (see FIG. 10 ) of the front surface electrode 92 a corresponds to a minor axis R 1 of the oval shape (see FIG. 3 ) of the second projection 42
- a long side L 2 of the rectangle of the front surface electrode 92 a may correspond to a major axis R 2 of the oval shape (see FIG. 3 ) of the second projection 42 .
- corresponding means being in the range of ⁇ 5% of a total length
- L 1 (1 ⁇ 0.1) ⁇ R 1
- L 2 (1 ⁇ 0.1) ⁇ R 2 .
- a short side L 1 of the notched rectangular shape of the front surface electrode 92 a corresponds to the minor axis R 1 of the oval shape of the second projection 42
- a long side L 2 of the notched rectangular shape of the front surface electrode 92 a may not correspond to a major axis R 2 of the oval shape of the second projection 42
- a long side corresponding to a part not provided with a notch of the notched rectangular shape of the front surface electrode 92 a may correspond to the major axis R 2 of the oval shape of the second projection 42 .
- the “oval shape” in this embodiment includes a shape having a linear part with a semicircular or circular arc shape as shown in FIG. 3 .
- the connector 50 becomes unstable.
- the connector 50 by adopting an aspect in which the area of the base end part 45 placed on the second conductor layer 72 is increased, and the gravity center position of the connector 50 is above the base end part 45 of the connector 50 , it is possible to prevent the connector 50 from becoming unstable as much as possible.
- the first projection 41 allows the conductive adhesive 75 to be positioned at a part not provided with the first projection 41 , enabling prevention of reduction in reliability.
- setting the thickness (height) of the first projection 41 to an appropriate value allows providing of the conductive adhesive 75 having an appropriate thickness between the head part 40 and the front surface of the second semiconductor element 92 .
- the head part 40 has the second projection 42 protruding toward the second semiconductor element 92 side, and the first projection 41 protrudes from the second projection 42 toward the second semiconductor element 92 side, it is possible to increase the thickness of the conductive adhesive 75 such as solder to a certain extent at apart not provided with the first projection 41 , and to further increase the thickness of the conductive adhesive 75 at a part not provided with the first projection 41 and the second projection 42 .
- setting the thickness (height) of the first projection 41 and the second projection 42 to an appropriate value allows providing of the conductive adhesive 75 having an appropriate thickness between the head part 40 and the front surfaces of the semiconductor elements 91 and 92 . Further, setting a width of the second projection 42 to an appropriate value allows a width of a current path to be secured.
- the base end part 45 can contact with the conductor layer 70 with the supporting surface 46 , or float in balance on the conductive adhesive 75 (before curing).
- the supporting surface 46 contacts with the conductor layer 70 , it is possible to more reliably prevent the balance of the connector 50 from being lost.
- the supporting surface 46 is floating on the conductive adhesive 75 , since the base end part 45 and the conductor layer 70 can be bonded more reliably, and the thickness of the conductive adhesive 75 can be secured when the conductive adhesive 75 cures, cracks in the conductive adhesive 75 can be prevented.
- the base end part 45 is connected to the conductor layer 70 via the conductive adhesive 75 such as solder
- the conductive adhesive 75 can be inserted into the recess 47 , and a fillet (e.g., a solder ferret) can be easily formed by the conductive adhesive 75 . Therefore, cracks can be prevented after an amount of the conductive adhesive 75 becomes insufficient and the conductive adhesive 75 is cured.
- the connector 50 when the connector 50 is heavy to an extent where the supporting surface 46 contacts with the conductor layer 70 , providing such the recess 47 is advantageous in that the base end part 45 and the conductor layer 70 can be bonded by the conductive adhesive 75 .
- planar shape of the front surface electrode 92 a of the second semiconductor element 92 is a vertically long shape
- planar shape of the second projection 42 is an oval shape
- a width of a current path passing through the front surface electrode 92 a and the second projection 42 can be widened.
- forming the planar shape of the second projection 42 into oval can reduce possibility of inclination of the head part 40 .
- the major axis of the oval shape is provided along a width direction (vertical direction in FIG. 3 ) of the head part 40 , it is advantageous in that possibility of inclination of the head part 40 in the width direction can be reduced.
- Adopting an aspect in which the first projection 41 is positioned at a center in the width direction (vertical direction in FIG. 3 ) of the head part 40 can also prevent inclination of the head part 40 in the width direction.
- the head part 40 may incline in the width direction with the first projection 41 as a center.
- adopting the present aspect can reduce possibility of inclination of the head part 40 in the width direction.
- the first projection 41 when adopting an aspect in which the first projection 41 has a linear part 41 a located on a base side of the first projection 41 and having a linear vertical sectional shape, and a hemispherical part 41 b positioned on a tip end side of the linear part 41 a and having a hemispherical or arcuate vertical sectional shape, a diameter of the hemispherical part 41 b can be reduced. Therefore, even when the head part 40 sinks into the conductive adhesive 75 , and the first projection 41 comes into contact with the front surface of the second semiconductor element 92 , the first projection 41 and the front surface of the second semiconductor element 92 can be contacted with each other with a smaller area (point). This can increase the amount of the conductive adhesive 75 located between the head part 40 and the front surface of the second semiconductor element 92 , enabling prevention in advance of occurrence of problems such as cracking in the conductive adhesive 75 upon curing.
- the linear part 41 a may have a cylindrical shape.
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Abstract
Description
- The present invention relates to an electronic device.
- There is conventionally known an electronic device that includes an electric element stacked in two or more stages, and is sealed with a sealing part such as a sealing resin. When two or more electric elements are stacked in this manner, there has been used an aspect in which the electric element and a conductor layer are connected by a plurality of wires. However, when an upper electric element generates heat, heat dissipation has not been sufficient as compared with that of a lower electric element, since the heat is dissipated through the wire or the lower electric element.
- In this regard, it has been proposed to provide an interposer between the electric elements in order to improve heat dissipation properties (e.g., see JP 2013-222905 A). However, since providing such an interposer requires one extra member, it has been expected to improve heat dissipation properties with a simple configuration without providing such a member.
- In view of the above, the present invention provides an electronic device that can efficiently dissipate heat generated from an electric element.
- An electronic device according to the present invention comprises:
-
- a substrate;
- a conductor layer having a first conductor layer and a second conductor layer provided on the substrate,
- a first electric element provided on the first conductor layer;
- a second electric element provided on the first electric element; and
- a connector having a base end part provided on the second conductor layer and a head part integrally formed with the base end part and connected to a front surface electrode of the second electric element via a conductive adhesive,
- wherein an area of the base end part placed on the second conductor layer is larger than an area of the head part placed on the second electric element, and
- wherein the base end part is located at a side of the substrate compared with the head part, and a gravity center position of the connector is at a side of the base end part of the connector.
- In the electronic device according to the present invention,
-
- the first electric element and the second electric element may be power semiconductor elements, and
- a heating amount of the first electric element may be larger than a heating amount of the second electric element.
- The electronic device, according to the present invention, may further comprise one or more third electric elements provided above the first electric element and provided below the second electric element.
- In the electronic device according to the present invention,
-
- the head part may have a second projection protruding toward a side of the second electric element and a first projection protruding toward the side of the second electric element from the second projection.
- In the electronic device according to the present invention,
-
- the head part may have a second projection protruding toward a side of the second electric element,
- the base end part may have a supporting surface,
- a planar shape of the second projection may be an oval shape, and
- a planar shape of the supporting surface may be a rectangular shape.
- In the electronic device according to the present invention,
-
- the base end part may have a supporting surface and a recess provided on a peripheral edge of the supporting surface.
- In the electronic device according to the present invention,
-
- the base end part may have a bent part being bent and extending toward a front surface side, and
- the recess may extend toward the front surface side at least up to the bent part.
- In the present invention, the area of the base end part of the connector placed on the second conductor layer is larger than the area of the head part of the connector placed on the second semiconductor element. Further, the gravity center position of the connector is above the base end part of the connector, and therefore an inclination of the head part of the connector can be prevented. Due to these matters, heat generated from the first electric element or the second electric element can be efficiently transmitted and escaped to the second conductor layer in a stable state.
- Since the gravity center position of the connector is above the base end part of the connector, an inclination of the head part of the connector can be prevented. As a result, reduction in reliability due to thinning of a solder thickness at a peripheral part of the head part can be prevented.
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FIG. 1 is a perspective view of a semiconductor device according to an embodiment of the present invention. -
FIG. 2 is a side view enlarging a part of a semiconductor device according to the embodiment of the present invention. -
FIG. 3 is a bottom view showing a connector used in the embodiment of the present invention. -
FIG. 4 is a perspective view showing a connector used in the embodiment of the present invention. -
FIG. 5 is a side view showing one aspect of a first projection used in a first embodiment of the present invention. -
FIG. 6 is a side view showing another aspect of the first projection used in the first embodiment of the present invention. -
FIG. 7(a) is a side cross-sectional view showing an aspect in which only one piece of third semiconductor element is provided, andFIG. 7(b) is a side cross-sectional view showing an aspect in which two pieces of the third semiconductor elements are provided. -
FIG. 8 is a bottom view showing one modification of a connector used in the embodiment of the present invention. -
FIG. 9 is a bottom view showing another modification of a connector used in the embodiment of the present invention. -
FIG. 10 is a plan view for describing a shape of a front surface electrode of a second semiconductor element used in the embodiment of the present invention. -
FIG. 11 is a side view of a semiconductor device according to the embodiment of the present invention. - As shown in
FIG. 1 , a semiconductor device as an example of an electronic device of this embodiment may have asubstrate 5 made of an insulating material for example, and aconductor layer 70 provided on thesubstrate 5 and made of copper or the like. A rear surface of thesubstrate 5 may be provided with aheat radiating plate 79 made of copper or the like. The semiconductor device may have a sealing part 80 (seeFIG. 11 ) made of a sealing resin or the like, andsemiconductor elements sealing part 80. A terminal (not shown) connected to theconductor layer 70 may protrude outside from thesealing part 80. - The
conductor layer 70 may have afirst conductor layer 71 and asecond conductor layer 72, provided on thesubstrate 5. Further, thesemiconductor elements first semiconductor element 91 provided on thefirst conductor layer 71, as an example of a first electric element, and asecond semiconductor element 92 provided above thefirst semiconductor element 91, as an example of a second electric element. In this embodiment, the aspect, in which the semiconductor device is used as an electronic device, thefirst semiconductor element 91 is used as a first electric element and thesecond semiconductor element 92 is used as a second electric element, is used. However, the present invention is not limited to this, and especially a semiconductor is not required to be used. - As shown in
FIG. 2 , the semiconductor device may have aconnector 50 having abase end part 45 provided on thesecond conductor layer 72 via aconductive adhesive 75 such as solder, and ahead part 40 integrally formed with thebase end part 45 and provided on a front surface of thesecond semiconductor element 92 via aconductive adhesive 75. Between a rear surface of thefirst semiconductor element 91 and thefirst conductor layer 71, and between a rear surface of thesecond semiconductor element 92 and a front surface of thefirst semiconductor element 91 may be connected via theconductive adhesive 75 such as solder. - An area of the
base end part 45 placed on thesecond conductor layer 72 may be larger than the area of thehead part 40 placed on thesecond semiconductor element 92. As an example, the area of thebase end part 45 placed on thesecond conductor layer 72 is an area of a supportingsurface 46 described later, and the area of thehead part 40 placed on thesecond semiconductor element 92 is an area of asecond projection 42 described later. Thebase end part 45 may be located lower than the head part 40 (at a side of the substrate 5), and a gravity center position of theconnector 50 may be at a side of thebase end part 45 of the connector 50 (seeFIGS. 4 and 11 ). A hemispherical projection shown inFIG. 11 indicates a position of the center of gravity calculated as a result of simulation. - The
first semiconductor element 91 may be a cascode-connected switching element, and thesecond semiconductor element 92 may be a control element. In this case, a heating amount of the switching element may be larger than a heating amount of the control element. As an example, thefirst semiconductor element 91 may be a silicon carbide power device or a gallium nitride power device, and thesecond semiconductor element 92 may be a MOSFET. Further, thesecond semiconductor element 92 may be an integrated circuit, a switching element, or a rectifier element. As shown inFIG. 1 , theconductor layer 70 may have athird conductor layer 73. As an example, thethird conductor layer 73 is used when thesecond semiconductor element 92 is a switching element. In addition, each of thefirst semiconductor element 91 and thesecond semiconductor element 92 may be a power semiconductor element. - Using the
connector 50 as in this embodiment allows a wiring resistance to be reduced. While the wire is generally made of aluminum, theconnector 50 can be formed of a material including copper (including only copper). Adopting the material including copper in this way allows further reduction of the wiring resistance, enabling reduction of noise emitted from the switching element. In particular, when thefirst semiconductor element 91 is a cascode-connected switching element (a silicon carbide power device or a gallium nitride power device), since a switching speed of the switch is high, influence of noise tends to be increased. In this regard, adopting theconnector 50 made of the material including copper enables reduction of influence of noise as described above. In addition, current flows even if the switching speed of the switching element is decreased since the wiring resistance can be reduced. Also in this result, generation of noise can be reduced. - Further, as shown in
FIGS. 7(a) and 7(b) , the semiconductor elements (electric elements) may be stacked in three or more, and there may be provided one or more third semiconductor elements (third electric elements) 93 provided above thefirst semiconductor element 91 and provided below thesecond semiconductor element 92. When three or more semiconductor elements are provided in this manner, heat is more apt to be retained. Therefore, adopting theconnector 50 of this embodiment becomes technically significant.FIG. 7(a) shows an aspect in which only one piece of thethird semiconductor element 93 is provided, andFIG. 7(b) shows an aspect in which two pieces of thethird semiconductor elements - As shown in
FIG. 3 , thehead part 40 may have afirst projection 41 protruding toward thesecond semiconductor element 92 side. Thefirst projection 41 may sink into theconductive adhesive 75 and contact with the front surface of thesecond semiconductor element 92 at a point. Thebase end part 45 may have the supportingsurface 46 that is in contact with theconductor layer 70 or is provided on the conductive adhesive 75 on theconductor layer 70. - As shown in
FIG. 3 , thehead part 40 may have thesecond projection 42 protruding toward thesecond semiconductor element 92 side, in addition to thefirst projection 41, or may have only thesecond projection 42 without having thefirst projection 41, as shown inFIG. 8 . Further, as shown inFIG. 9 , thehead part 40 may have only thefirst projection 41 without having thesecond projection 42. When thehead part 40 has thefirst projection 41 and thesecond projection 42, thefirst projection 41 protrudes from thesecond projection 42 toward thesecond semiconductor element 92 side. - As shown in
FIG. 3 , thebase end part 45 may have arecess 47 provided on a periphery of the supportingsurface 46. Therecess 47 may be provided to surround the entire supportingsurface 46, or may be formed to continuously surround three sides of the supportingsurface 46 on the base end side, as shown inFIG. 3 . Additionally, therecess 47 may be formed to intermittently, not continuously, surround the supportingsurface 46. Further, thebase end part 45 may have abent part 48 being bent and extending toward the front surface side (an upper side inFIG. 4 ). Therecess 47 may extend to the front surface side along thebent part 48 extending from the supportingsurface 46 to the front surface side. When adopting an aspect in which therecess 47 extends toward the front surface side along thebent part 48 as described above, it is advantageous in that the conductive adhesive 75 can be provided along therecess 47 provided to thebent part 48, and a ferret can be easily formed. - In addition, when a tip end (upper end) of the
recess 47 is provided to thebent part 48, a shape of therecess 47 may be collapsed when thebent part 48 is formed. In this regard, as shown inFIG. 4 , positioning an end part of therecess 47 at a position higher than thebent part 48 can prevent in advance the shape of therecess 47 from being collapsed when thebent part 48 is formed. - When a straight line connecting a center in a width direction (vertical direction in
FIG. 3 ) of thebase end part 45 and a center in a width direction of thehead part 40 is a first direction (horizontal direction inFIG. 3 ), a length of the supportingsurface 46 along the first direction may be longer than a length of thesecond projection 42 along the first direction (seeFIG. 3 ). As an example, the length of the supportingsurface 46 along the first direction may be twice to three times as long as the length of thesecond projection 42 along the first direction. - The
first projection 41 may be positioned at a center in the width direction of thehead part 40. - Among the front surface electrodes of the
second semiconductor element 92, a firstfront surface electrode 92 a connected to thehead part 40 may be a vertically long shape in a planar shape. As an example, the planar shape may be a rectangular shape, or may be a notched rectangular shape in which only a part provided with a secondfront surface electrode 92 b is recessed, as shown inFIG. 10 . The secondfront surface electrode 92 b is used, for example, when thesecond semiconductor element 92 is a switching element. A control terminal (not shown) extending from the sealingpart 80 to outside may be connected to thethird conductor layer 73, and thethird conductor layer 73 may be connected with the secondfront surface electrode 92 b via a wire 19 (seeFIG. 1 ). This control terminal may be used to control thesecond semiconductor element 92. - As shown in
FIG. 3 , a planar shape of thesecond projection 42 may be an oval shape. Further, a planar shape of the supportingsurface 46 may be a rectangular shape. Although it can be considered to form the planar shape of thesecond projection 42 into a rectangular or notched rectangular shape in accordance with the planar shape of thefront surface electrode 92 a of thesecond semiconductor element 92, adapting a shape having a corner may cause a crack in the conductive adhesive 75 (seeFIG. 2 ) provided between thesecond projection 42 and thesecond semiconductor element 92. In this regard, forming the planar shape of thesecond projection 42 into oval can prevent cracks in the conductive adhesive 75 provided between thesecond projection 42 and thesecond semiconductor element 92, in advance. - As in a case where the
connector 50 is made of the material including copper (including only copper) and theconductor layer 70 is also made of the material including copper (including only copper), when theconnector 50 and theconductor layer 70 are made of a same material or substantially same material, a difference between thermal expansion of theconnector 50 and thermal expansion of theconductor layer 70 becomes small. Therefore, even when the planar shape of the supportingsurface 46 is rectangular such as a square or a rectangle, cracks are not easily generated in the conductive adhesive 75 (seeFIG. 2 ) provided between thebase end part 45 of theconnector 50 and thesecond conductor layer 72. Additionally, while thefirst semiconductor element 91 and thesecond semiconductor element 92 generate heat on thehead part 40 side of theconnector 50, there is no such heat generation on thebase end part 45 side of theconnector 50. In that sense as well, cracks are not easily generated in the conductive adhesive 75 provided between thebase end part 45 of theconnector 50 and thesecond conductor layer 72. On the other hand, forming the planar shape of the supportingsurface 46 into rectangular allows a size of the supportingsurface 46 to be made as large as possible, allowing the center of gravity to be more reliably positioned on thebase end part 45 side. From this point, it is advantageous to adopt the aspect in which the planar shape of thesecond projection 42 is oval, whereas the planar shape of the supportingsurface 46 is rectangular. - The planar shape of the
front surface electrode 92 a of thesecond semiconductor element 92 may correspond to the planar shape of thefirst projection 41. For example, when the planar shape of thefront surface electrode 92 a is rectangular, and the planar shape of thesecond projection 42 is oval, a short side L1 of the rectangle (seeFIG. 10 ) of thefront surface electrode 92 a corresponds to a minor axis R1 of the oval shape (seeFIG. 3 ) of thesecond projection 42, and/or a long side L2 of the rectangle of thefront surface electrode 92 a may correspond to a major axis R2 of the oval shape (seeFIG. 3 ) of thesecond projection 42. Here, “corresponding” means being in the range of ±5% of a total length, and L1=(1±0.1)×R1, and L2=(1±0.1)×R2. As shown inFIG. 10 , when the secondfront surface electrode 92 b has a notched rectangular shape, a short side L1 of the notched rectangular shape of thefront surface electrode 92 a corresponds to the minor axis R1 of the oval shape of thesecond projection 42, and a long side L2 of the notched rectangular shape of thefront surface electrode 92 a may not correspond to a major axis R2 of the oval shape of thesecond projection 42, or a long side corresponding to a part not provided with a notch of the notched rectangular shape of thefront surface electrode 92 a may correspond to the major axis R2 of the oval shape of thesecond projection 42. In addition, the “oval shape” in this embodiment includes a shape having a linear part with a semicircular or circular arc shape as shown inFIG. 3 . - Next, among the functions and effects according to this embodiment having the above-described configuration, those that have not been described will be mainly described.
- In this embodiment, when adopting such an aspect as the area of the
base end part 45 of theconnector 50 placed on thesecond conductor layer 72 is larger than the area of thehead part 40 of theconnector 50 placed on the second semiconductor element 92 (seeFIG. 3 ) and the gravity center position of theconnector 50 is above thebase end part 45 of theconnector 50 as shown inFIGS. 4 and 11 , an inclination of thehead part 40 of theconnector 50 can be prevented. Thus, heat generated from thefirst semiconductor element 91 and/or thesecond semiconductor element 92 can be efficiently transmitted and escaped to thesecond conductor layer 72 in a stable state. - Additionally, as shown in
FIGS. 4 and 11 , when adopting such an aspect as the gravity center position of theconnector 50 is above thebase end part 45 of theconnector 50, it is possible to prevent inclination of thehead part 40 of theconnector 50, which can prevent reduction in reliability due to thinning of a solder thickness at a peripheral part of thehead part 40. - As in this embodiment, in an aspect in which two or more semiconductor elements are stacked, and the
head part 40 is placed on the uppermost semiconductor element (second semiconductor element 92), since the center of gravity moves upward as compared with the aspect in which the head part and the base end part are located at a same or substantially same height, theconnector 50 becomes unstable. In this regard, as in this embodiment, by adopting an aspect in which the area of thebase end part 45 placed on thesecond conductor layer 72 is increased, and the gravity center position of theconnector 50 is above thebase end part 45 of theconnector 50, it is possible to prevent theconnector 50 from becoming unstable as much as possible. - In addition, adopting the
first projection 41 allows the conductive adhesive 75 to be positioned at a part not provided with thefirst projection 41, enabling prevention of reduction in reliability. In particular, in an aspect in which thehead part 40 sinks into theconductive adhesive 75 due to the weight of theconnector 50, and thefirst projection 41 and the front surface of thesecond semiconductor element 92 are in contact with each other, setting the thickness (height) of thefirst projection 41 to an appropriate value allows providing of the conductive adhesive 75 having an appropriate thickness between thehead part 40 and the front surface of thesecond semiconductor element 92. - Further, as shown in
FIG. 3 , when adopting the aspect in which thehead part 40 has thesecond projection 42 protruding toward thesecond semiconductor element 92 side, and thefirst projection 41 protrudes from thesecond projection 42 toward thesecond semiconductor element 92 side, it is possible to increase the thickness of the conductive adhesive 75 such as solder to a certain extent at apart not provided with thefirst projection 41, and to further increase the thickness of the conductive adhesive 75 at a part not provided with thefirst projection 41 and thesecond projection 42. In particular, in the aspect in which thehead part 40 sinks into theconductive adhesive 75 due to the weight of theconnector 50, and thefirst projection 41 and the front surface of thesecond semiconductor element 92 are in contact with each other, setting the thickness (height) of thefirst projection 41 and thesecond projection 42 to an appropriate value allows providing of the conductive adhesive 75 having an appropriate thickness between thehead part 40 and the front surfaces of thesemiconductor elements second projection 42 to an appropriate value allows a width of a current path to be secured. - The
base end part 45 can contact with theconductor layer 70 with the supportingsurface 46, or float in balance on the conductive adhesive 75 (before curing). When the supportingsurface 46 contacts with theconductor layer 70, it is possible to more reliably prevent the balance of theconnector 50 from being lost. On the other hand, when the supportingsurface 46 is floating on theconductive adhesive 75, since thebase end part 45 and theconductor layer 70 can be bonded more reliably, and the thickness of the conductive adhesive 75 can be secured when the conductive adhesive 75 cures, cracks in the conductive adhesive 75 can be prevented. - In an aspect in which the
base end part 45 is connected to theconductor layer 70 via the conductive adhesive 75 such as solder, when adopting the aspect in which thebase end part 45 has the supportingsurface 46 and therecess 47 provided on a peripheral edge of the supportingsurface 46 as shown inFIG. 3 , the conductive adhesive 75 can be inserted into therecess 47, and a fillet (e.g., a solder ferret) can be easily formed by theconductive adhesive 75. Therefore, cracks can be prevented after an amount of theconductive adhesive 75 becomes insufficient and theconductive adhesive 75 is cured. In particular, when theconnector 50 is heavy to an extent where the supportingsurface 46 contacts with theconductor layer 70, providing such therecess 47 is advantageous in that thebase end part 45 and theconductor layer 70 can be bonded by theconductive adhesive 75. In such a case, as shown inFIG. 4 , it is also advantageous to adopt an aspect in which therecess 47 extends toward the front surface side along thebent part 48. This is because a fillet can be formed by the thicker conductive adhesive 75 by adopting this aspect. - There is a restriction on an amount of the conductive adhesive 75 that can be applied to the front surface of the
second semiconductor element 92, and a size of thehead part 40 that can be placed on the front surface of thesecond semiconductor element 92. In this regard, by providing thesecond projection 42 having a size (in an in-plane direction) of an only necessary contact area with theconductive adhesive 75, an appropriate contact area with the conductive adhesive 75 can be secured, and the amount of the conductive adhesive 75 can be made appropriate. - Further, as shown in
FIG. 3 , when the planar shape of thefront surface electrode 92 a of thesecond semiconductor element 92 is a vertically long shape, and the planar shape of thesecond projection 42 is an oval shape, and when a long side of the oval shape of thesecond projection 42 is provided along a longitudinal direction of thefront surface electrode 92 a, it is advantageous in that a width of a current path passing through thefront surface electrode 92 a and thesecond projection 42 can be widened. In addition, forming the planar shape of thesecond projection 42 into oval can reduce possibility of inclination of thehead part 40. In particular, in an aspect in which the major axis of the oval shape is provided along a width direction (vertical direction inFIG. 3 ) of thehead part 40, it is advantageous in that possibility of inclination of thehead part 40 in the width direction can be reduced. - Adopting an aspect in which the
first projection 41 is positioned at a center in the width direction (vertical direction inFIG. 3 ) of thehead part 40 can also prevent inclination of thehead part 40 in the width direction. In particular, in the aspect in which thehead part 40 sinks into theconductive adhesive 75 due to the weight of theconnector 50, and thefirst projection 41 and the front surface of thesecond semiconductor element 92 are in contact with each other, thehead part 40 may incline in the width direction with thefirst projection 41 as a center. In this regard, adopting the present aspect can reduce possibility of inclination of thehead part 40 in the width direction. - As shown in
FIGS. 5 and 6 , when adopting an aspect in which thefirst projection 41 has alinear part 41 a located on a base side of thefirst projection 41 and having a linear vertical sectional shape, and ahemispherical part 41 b positioned on a tip end side of thelinear part 41 a and having a hemispherical or arcuate vertical sectional shape, a diameter of thehemispherical part 41 b can be reduced. Therefore, even when thehead part 40 sinks into theconductive adhesive 75, and thefirst projection 41 comes into contact with the front surface of thesecond semiconductor element 92, thefirst projection 41 and the front surface of thesecond semiconductor element 92 can be contacted with each other with a smaller area (point). This can increase the amount of the conductive adhesive 75 located between thehead part 40 and the front surface of thesecond semiconductor element 92, enabling prevention in advance of occurrence of problems such as cracking in the conductive adhesive 75 upon curing. - As shown in
FIG. 6 , when adopting an aspect having a tapered shape in which a width decreases toward a tip end as thelinear part 41 a, it is possible to increase the conductive adhesive 75 on the tip end side. Therefore, it is possible to prevent in advance of occurrence of problems such as cracking in the conductive adhesive 75 upon curing, on the tip side close to thesecond semiconductor element 92. Further, since the amount of the conductive adhesive 75 can be gradually increased toward the tip end side, the conductive adhesive 75 can be evenly and reliably positioned around thefirst projection 41. Therefore, even in the aspect in which thehead part 40 sinks into theconductive adhesive 75 due to the weight of theconnector 50, and thefirst projection 41 and the front surfaces of thesemiconductor elements head part 40 can be reduced. As shown inFIG. 5 , thelinear part 41 a may have a cylindrical shape. - Lastly, the description of the embodiment and the disclosure of the drawings described above are merely examples for explaining the invention described in the claims, and the invention described in the claims is not limited by the description of the embodiment or the disclosure of the drawings described above. In addition, the description of the claims at the original application is merely an example, and the description of the claims can be appropriately changed based on the description of the specification, the drawings, and the like.
-
- 5 Substrate
- 40 Head part
- 41 First projection
- 42 Second projection
- 45 Base end part
- 46 Supporting surface
- 47 Recess
- 48 Bent part
- 50 Connector
- 70 Conductor layer
- 71 First conductor layer
- 72 Second conductor layer
- 75 Conductive adhesive
- 91 First semiconductor element (First electric element)
- 92 Second semiconductor element (Second electric element)
- 92 a First front surface electrode (Front surface electrode)
- 92 b Second front surface electrode (Front surface electrode)
- 93 Third semiconductor element (Third electric element)
Claims (7)
Applications Claiming Priority (1)
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PCT/JP2017/006023 WO2018150553A1 (en) | 2017-02-20 | 2017-02-20 | Electronic device |
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US20190051577A1 true US20190051577A1 (en) | 2019-02-14 |
US10600712B2 US10600712B2 (en) | 2020-03-24 |
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US15/570,864 Active US10600712B2 (en) | 2017-02-20 | 2017-02-20 | Electronic device |
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US (1) | US10600712B2 (en) |
EP (1) | EP3584829A4 (en) |
JP (1) | JP6364556B1 (en) |
KR (1) | KR101954393B1 (en) |
CN (1) | CN108780786B (en) |
WO (1) | WO2018150553A1 (en) |
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KR101954393B1 (en) | 2019-03-05 |
JPWO2018150553A1 (en) | 2019-02-21 |
KR20180105111A (en) | 2018-09-27 |
CN108780786A (en) | 2018-11-09 |
CN108780786B (en) | 2021-10-01 |
EP3584829A1 (en) | 2019-12-25 |
JP6364556B1 (en) | 2018-07-25 |
US10600712B2 (en) | 2020-03-24 |
EP3584829A4 (en) | 2021-03-10 |
WO2018150553A1 (en) | 2018-08-23 |
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