JP2009542008A5 - - Google Patents
Info
- Publication number
- JP2009542008A5 JP2009542008A5 JP2009516709A JP2009516709A JP2009542008A5 JP 2009542008 A5 JP2009542008 A5 JP 2009542008A5 JP 2009516709 A JP2009516709 A JP 2009516709A JP 2009516709 A JP2009516709 A JP 2009516709A JP 2009542008 A5 JP2009542008 A5 JP 2009542008A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- microcrystalline silicon
- depositing
- silicon film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims 46
- 238000000034 method Methods 0.000 claims 34
- 238000000151 deposition Methods 0.000 claims 26
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims 23
- 239000000203 mixture Substances 0.000 claims 17
- 239000000758 substrate Substances 0.000 claims 15
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 14
- 229910000077 silane Inorganic materials 0.000 claims 13
- 239000004065 semiconductor Substances 0.000 claims 11
- 230000008021 deposition Effects 0.000 claims 8
- 238000002425 crystallisation Methods 0.000 claims 4
- 230000008025 crystallization Effects 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 238000001816 cooling Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 229910052990 silicon hydride Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/426,127 US7655542B2 (en) | 2006-06-23 | 2006-06-23 | Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device |
| PCT/US2007/071703 WO2007149945A2 (en) | 2006-06-23 | 2007-06-20 | Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009542008A JP2009542008A (ja) | 2009-11-26 |
| JP2009542008A5 true JP2009542008A5 (https=) | 2010-05-13 |
Family
ID=38834369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009516709A Pending JP2009542008A (ja) | 2006-06-23 | 2007-06-20 | 光起電デバイス用の微結晶シリコン膜を堆積するための方法および装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US7655542B2 (https=) |
| EP (1) | EP2041797A4 (https=) |
| JP (1) | JP2009542008A (https=) |
| KR (1) | KR20090031492A (https=) |
| CN (1) | CN101322251B (https=) |
| TW (1) | TW200810138A (https=) |
| WO (1) | WO2007149945A2 (https=) |
Families Citing this family (65)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7655542B2 (en) * | 2006-06-23 | 2010-02-02 | Applied Materials, Inc. | Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device |
| KR101087351B1 (ko) * | 2006-12-25 | 2011-11-25 | 샤프 가부시키가이샤 | 광전변환 장치 및 그 제조 방법 |
| US20080223440A1 (en) * | 2007-01-18 | 2008-09-18 | Shuran Sheng | Multi-junction solar cells and methods and apparatuses for forming the same |
| US8203071B2 (en) * | 2007-01-18 | 2012-06-19 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
| US7582515B2 (en) * | 2007-01-18 | 2009-09-01 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
| US7968792B2 (en) * | 2007-03-05 | 2011-06-28 | Seagate Technology Llc | Quantum dot sensitized wide bandgap semiconductor photovoltaic devices & methods of fabricating same |
| US20080245414A1 (en) * | 2007-04-09 | 2008-10-09 | Shuran Sheng | Methods for forming a photovoltaic device with low contact resistance |
| US20080302303A1 (en) * | 2007-06-07 | 2008-12-11 | Applied Materials, Inc. | Methods and apparatus for depositing a uniform silicon film with flow gradient designs |
| US7875486B2 (en) | 2007-07-10 | 2011-01-25 | Applied Materials, Inc. | Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning |
| TW200905730A (en) * | 2007-07-23 | 2009-02-01 | Ind Tech Res Inst | Method for forming a microcrystalline silicon film |
| JP4488039B2 (ja) * | 2007-07-25 | 2010-06-23 | ソニー株式会社 | 薄膜半導体装置の製造方法 |
| US9054206B2 (en) * | 2007-08-17 | 2015-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US20090104733A1 (en) * | 2007-10-22 | 2009-04-23 | Yong Kee Chae | Microcrystalline silicon deposition for thin film solar applications |
| US7687300B2 (en) * | 2007-10-22 | 2010-03-30 | Applied Materials, Inc. | Method of dynamic temperature control during microcrystalline SI growth |
| WO2009059238A1 (en) | 2007-11-02 | 2009-05-07 | Applied Materials, Inc. | Plasma treatment between deposition processes |
| US7833885B2 (en) | 2008-02-11 | 2010-11-16 | Applied Materials, Inc. | Microcrystalline silicon thin film transistor |
| US8076222B2 (en) * | 2008-02-11 | 2011-12-13 | Applied Materials, Inc. | Microcrystalline silicon thin film transistor |
| US20090238972A1 (en) * | 2008-03-24 | 2009-09-24 | Applied Materials, Inc. | Methods and apparatus for using reduced purity silane to deposit silicon |
| CA2716191A1 (en) * | 2008-03-26 | 2009-10-01 | E. I. Du Pont De Nemours And Company | High performance anti-spall laminate article |
| US20090250100A1 (en) * | 2008-04-04 | 2009-10-08 | E.I. Du Pont De Nemours And Company | Solar cell modules comprising high melt flow poly(vinyl butyral) encapsulants |
| US7947523B2 (en) * | 2008-04-25 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing photoelectric conversion device |
| US20090288701A1 (en) * | 2008-05-23 | 2009-11-26 | E.I.Du Pont De Nemours And Company | Solar cell laminates having colored multi-layer encapsulant sheets |
| WO2009149000A2 (en) | 2008-06-02 | 2009-12-10 | E. I. Du Pont De Nemours And Company | Solar cell module having a low haze encapsulant layer |
| US7955890B2 (en) | 2008-06-24 | 2011-06-07 | Applied Materials, Inc. | Methods for forming an amorphous silicon film in display devices |
| WO2010024814A1 (en) * | 2008-08-28 | 2010-03-04 | Applied Materials, Inc. | Methods and apparatus for depositing a uniform silicon film with flow gradient designs |
| US8895842B2 (en) * | 2008-08-29 | 2014-11-25 | Applied Materials, Inc. | High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells |
| TWI475708B (zh) * | 2008-09-01 | 2015-03-01 | Applied Materials Inc | 利用流量梯度設計以沉積均勻矽膜之方法與設備 |
| KR101507967B1 (ko) * | 2008-09-23 | 2015-04-03 | 삼성디스플레이 주식회사 | 비정질 실리콘층 형성 방법 및 이를 이용한 액정표시장치 제조 방법 |
| US20100101647A1 (en) * | 2008-10-24 | 2010-04-29 | E.I. Du Pont De Nemours And Company | Non-autoclave lamination process for manufacturing solar cell modules |
| EP2342209A1 (en) | 2008-10-31 | 2011-07-13 | E. I. du Pont de Nemours and Company | Solar cells modules comprising low haze encapsulants |
| US8080727B2 (en) | 2008-11-24 | 2011-12-20 | E. I. Du Pont De Nemours And Company | Solar cell modules comprising an encapsulant sheet of a blend of ethylene copolymers |
| US8084129B2 (en) * | 2008-11-24 | 2011-12-27 | E. I. Du Pont De Nemours And Company | Laminated articles comprising a sheet of a blend of ethylene copolymers |
| US20100136261A1 (en) * | 2008-12-03 | 2010-06-03 | Applied Materials, Inc. | Modulation of rf returning straps for uniformity control |
| DE102008063737A1 (de) * | 2008-12-18 | 2010-06-24 | Forschungszentrum Jülich GmbH | Verfahren zur Abscheidung von mikrokristallinem Silizium auf einem Substrat |
| US20100154867A1 (en) * | 2008-12-19 | 2010-06-24 | E. I. Du Pont De Nemours And Company | Mechanically reliable solar cell modules |
| KR101022822B1 (ko) * | 2008-12-31 | 2011-03-17 | 한국철강 주식회사 | 광기전력 장치의 제조 방법 |
| KR101629532B1 (ko) * | 2008-12-31 | 2016-06-13 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 낮은 탁도 및 높은 내습성을 갖는 봉지제 시트를 포함하는 태양 전지 모듈 |
| EP2380207A4 (en) * | 2009-01-22 | 2012-07-11 | Du Pont | POLY (VINYL BUTYRAL) -APPLICATION FUEL WITH CHELATINES FOR SOLAR CELL MODULES |
| DE102009025428A1 (de) * | 2009-06-16 | 2010-12-23 | Schott Solar Ag | Dünnschichtsolarzelle und Verfahren zur Herstellung |
| WO2011011301A2 (en) * | 2009-07-23 | 2011-01-27 | Applied Materials, Inc. | A mixed silicon phase film for high efficiency thin film silicon solar cells |
| CN102859863A (zh) * | 2009-07-31 | 2013-01-02 | 纳幕尔杜邦公司 | 用于光伏电池的可交联包封材料 |
| US8026157B2 (en) * | 2009-09-02 | 2011-09-27 | Applied Materials, Inc. | Gas mixing method realized by back diffusion in a PECVD system with showerhead |
| US8535760B2 (en) | 2009-09-11 | 2013-09-17 | Air Products And Chemicals, Inc. | Additives to silane for thin film silicon photovoltaic devices |
| WO2011046664A2 (en) * | 2009-10-15 | 2011-04-21 | Applied Materials, Inc. | A barrier layer disposed between a substrate and a transparent conductive oxide layer for thin film silicon solar cells |
| US20110126875A1 (en) * | 2009-12-01 | 2011-06-02 | Hien-Minh Huu Le | Conductive contact layer formed on a transparent conductive layer by a reactive sputter deposition |
| TW201120942A (en) * | 2009-12-08 | 2011-06-16 | Ind Tech Res Inst | Method for depositing microcrystalline silicon and monitor device of a plasma enhanced deposition |
| TWI401812B (zh) * | 2009-12-31 | 2013-07-11 | Metal Ind Res Anddevelopment Ct | Solar battery |
| US20130000728A1 (en) * | 2010-03-18 | 2013-01-03 | Fuji Electric Co., Ltd. | Photovoltaic cell and manufacturing method thereof |
| US20110275200A1 (en) * | 2010-05-06 | 2011-11-10 | Applied Materials, Inc. | Methods of dynamically controlling film microstructure formed in a microcrystalline layer |
| US8916425B2 (en) * | 2010-07-26 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device |
| US8609980B2 (en) | 2010-07-30 | 2013-12-17 | E I Du Pont De Nemours And Company | Cross-linkable ionomeric encapsulants for photovoltaic cells |
| US20120202316A1 (en) * | 2011-02-03 | 2012-08-09 | Applied Materials, Inc. | Plasma treatment of tco layers for silicon thin film photovoltaic devices |
| US20120318335A1 (en) * | 2011-06-15 | 2012-12-20 | International Business Machines Corporation | Tandem solar cell with improved tunnel junction |
| WO2013009505A2 (en) | 2011-07-13 | 2013-01-17 | Applied Materials, Inc. | Methods of manufacturing thin film transistor devices |
| KR101912888B1 (ko) | 2011-10-07 | 2018-12-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 아르곤 가스 희석으로 실리콘 함유 층을 증착하기 위한 방법들 |
| KR101302373B1 (ko) * | 2011-12-21 | 2013-09-06 | 주식회사 테스 | 태양전지 제조방법 |
| CN102790133B (zh) * | 2012-08-16 | 2015-06-10 | 青海天普太阳能科技有限公司 | 一种多步生长法制备微晶硅薄膜的方法 |
| TWI474499B (zh) * | 2012-10-12 | 2015-02-21 | Iner Aec Executive Yuan | Microcrystalline silicon thin film solar cell element and its manufacturing method |
| RU2536775C2 (ru) * | 2012-11-14 | 2014-12-27 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный университет имени М.В. Ломоносова" (МГУ) | Способ получения пленок аморфного кремния, содержащего нанокристаллические включения |
| WO2014100309A1 (en) | 2012-12-19 | 2014-06-26 | E. I. Du Pont De Nemours And Company | Cross-linkable acid copolymer composition and its use in glass laminates |
| WO2015171575A1 (en) | 2014-05-09 | 2015-11-12 | E. I. Du Pont De Nemours And Company | Encapsulant composition comprising a copolymer of ethylene, vinyl acetate and a third comonomer |
| CN104152864B (zh) * | 2014-08-22 | 2016-11-16 | 中国科学院宁波材料技术与工程研究所 | 硅薄膜的制备方法 |
| US9559245B2 (en) | 2015-03-23 | 2017-01-31 | Sunpower Corporation | Blister-free polycrystalline silicon for solar cells |
| ES2943469T3 (es) | 2018-03-08 | 2023-06-13 | Dow Global Technologies Llc | Módulo fotovoltaico y composición encapsulante que tienen resistencia mejorada a la degradación inducida por potencial |
| US20220102567A1 (en) * | 2019-02-06 | 2022-03-31 | First Solar, Inc. | Metal oxynitride back contact layers for photovoltaic devices |
Family Cites Families (131)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US733226A (en) * | 1902-08-09 | 1903-07-07 | Jesse Lines | Scale. |
| US4063735A (en) | 1976-03-15 | 1977-12-20 | Wendel Dan P | CB Radio highway board game apparatus |
| US4068043A (en) | 1977-03-11 | 1978-01-10 | Energy Development Associates | Pump battery system |
| US4490573A (en) | 1979-12-26 | 1984-12-25 | Sera Solar Corporation | Solar cells |
| US4400577A (en) | 1981-07-16 | 1983-08-23 | Spear Reginald G | Thin solar cells |
| JPS59108370A (ja) | 1982-12-14 | 1984-06-22 | Kanegafuchi Chem Ind Co Ltd | 光起電力装置 |
| US4471156A (en) * | 1983-01-27 | 1984-09-11 | Aluminum Company Of America | Damping spacer with variable damping feature |
| US4471155A (en) | 1983-04-15 | 1984-09-11 | Energy Conversion Devices, Inc. | Narrow band gap photovoltaic devices with enhanced open circuit voltage |
| US4878097A (en) | 1984-05-15 | 1989-10-31 | Eastman Kodak Company | Semiconductor photoelectric conversion device and method for making same |
| JPS6249672A (ja) | 1985-08-29 | 1987-03-04 | Sumitomo Electric Ind Ltd | アモルフアス光起電力素子 |
| CA1321660C (en) | 1985-11-05 | 1993-08-24 | Hideo Yamagishi | Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer |
| US4755475A (en) | 1986-02-18 | 1988-07-05 | Sanyo Electric Co., Ltd. | Method of manufacturing photovoltaic device |
| US4841908A (en) | 1986-06-23 | 1989-06-27 | Minnesota Mining And Manufacturing Company | Multi-chamber deposition system |
| US4776894A (en) | 1986-08-18 | 1988-10-11 | Sanyo Electric Co., Ltd. | Photovoltaic device |
| JP2738557B2 (ja) | 1989-03-10 | 1998-04-08 | 三菱電機株式会社 | 多層構造太陽電池 |
| JPH0463735A (ja) | 1990-06-30 | 1992-02-28 | Mazda Motor Corp | 車両用ランプ装置 |
| JPH0468043A (ja) | 1990-07-10 | 1992-03-03 | Mitsubishi Petrochem Co Ltd | 熱可塑性樹脂組成物 |
| JP2719230B2 (ja) | 1990-11-22 | 1998-02-25 | キヤノン株式会社 | 光起電力素子 |
| US5256887A (en) | 1991-07-19 | 1993-10-26 | Solarex Corporation | Photovoltaic device including a boron doping profile in an i-type layer |
| JP3164956B2 (ja) | 1993-01-28 | 2001-05-14 | アプライド マテリアルズ インコーポレイテッド | Cvdにより大面積のガラス基板上に高堆積速度でアモルファスシリコン薄膜を堆積する方法 |
| AUPM483494A0 (en) | 1994-03-31 | 1994-04-28 | Pacific Solar Pty Limited | Multiple layer thin film solar cells |
| AUPM982294A0 (en) | 1994-12-02 | 1995-01-05 | Pacific Solar Pty Limited | Method of manufacturing a multilayer solar cell |
| US5677236A (en) | 1995-02-24 | 1997-10-14 | Mitsui Toatsu Chemicals, Inc. | Process for forming a thin microcrystalline silicon semiconductor film |
| JPH08264815A (ja) | 1995-03-23 | 1996-10-11 | Sanyo Electric Co Ltd | 非晶質シリコンカーバイド膜及びこれを用いた光起電力素子 |
| JP3223102B2 (ja) | 1995-06-05 | 2001-10-29 | シャープ株式会社 | 太陽電池セルおよびその製造方法 |
| FR2743193B1 (fr) | 1996-01-02 | 1998-04-30 | Univ Neuchatel | Procede et dispositif de depot d'au moins une couche de silicium hydrogene microcristallin ou nanocristallin intrinseque, et cellule photovoltaique et transistor a couches minces obtenus par la mise en oeuvre de ce procede |
| JPH09199431A (ja) | 1996-01-17 | 1997-07-31 | Canon Inc | 薄膜形成方法および薄膜形成装置 |
| US5730808A (en) | 1996-06-27 | 1998-03-24 | Amoco/Enron Solar | Producing solar cells by surface preparation for accelerated nucleation of microcrystalline silicon on heterogeneous substrates |
| US6013155A (en) * | 1996-06-28 | 2000-01-11 | Lam Research Corporation | Gas injection system for plasma processing |
| US5932940A (en) * | 1996-07-16 | 1999-08-03 | Massachusetts Institute Of Technology | Microturbomachinery |
| JPH10117006A (ja) | 1996-08-23 | 1998-05-06 | Kanegafuchi Chem Ind Co Ltd | 薄膜光電変換装置 |
| US6180870B1 (en) | 1996-08-28 | 2001-01-30 | Canon Kabushiki Kaisha | Photovoltaic device |
| EP0831538A3 (en) | 1996-09-19 | 1999-07-14 | Canon Kabushiki Kaisha | Photovoltaic element having a specific doped layer |
| FR2757141B1 (fr) * | 1996-12-12 | 1999-03-26 | Darlet Marchante Tech Sa | Machine d'enroulement d'un element plat continu pour former des bobines |
| US6552414B1 (en) | 1996-12-24 | 2003-04-22 | Imec Vzw | Semiconductor device with selectively diffused regions |
| JP2005167264A (ja) * | 1997-03-10 | 2005-06-23 | Canon Inc | 堆積膜形成方法、半導体素子の製造方法、及び光電変換素子の製造方法 |
| US6121541A (en) | 1997-07-28 | 2000-09-19 | Bp Solarex | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys |
| JP3792376B2 (ja) * | 1997-11-10 | 2006-07-05 | 株式会社カネカ | シリコン系薄膜光電変換装置 |
| WO1999025029A1 (en) * | 1997-11-10 | 1999-05-20 | Kaneka Corporation | Method of producing silicon thin-film photoelectric transducer and plasma cvd apparatus used for the method |
| JP3581546B2 (ja) | 1997-11-27 | 2004-10-27 | キヤノン株式会社 | 微結晶シリコン膜形成方法および光起電力素子の製造方法 |
| JP4208281B2 (ja) | 1998-02-26 | 2009-01-14 | キヤノン株式会社 | 積層型光起電力素子 |
| JPH11246971A (ja) | 1998-03-03 | 1999-09-14 | Canon Inc | 微結晶シリコン系薄膜の作製方法及び作製装置 |
| US6303945B1 (en) | 1998-03-16 | 2001-10-16 | Canon Kabushiki Kaisha | Semiconductor element having microcrystalline semiconductor material |
| US8181656B2 (en) * | 1998-06-10 | 2012-05-22 | Asthmatx, Inc. | Methods for treating airways |
| JPH11354820A (ja) | 1998-06-12 | 1999-12-24 | Sharp Corp | 光電変換素子及びその製造方法 |
| US6077722A (en) | 1998-07-14 | 2000-06-20 | Bp Solarex | Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts |
| WO2000013237A1 (en) | 1998-08-26 | 2000-03-09 | Nippon Sheet Glass Co., Ltd. | Photovoltaic device |
| DE69936906T2 (de) | 1998-10-12 | 2008-05-21 | Kaneka Corp. | Verfahren zur Herstellung einer siliziumhaltigen photoelektrischen Dünnschicht-Umwandlungsanordnung |
| US6335479B1 (en) | 1998-10-13 | 2002-01-01 | Dai Nippon Printing Co., Ltd. | Protective sheet for solar battery module, method of fabricating the same and solar battery module |
| EP2264771A3 (en) | 1998-12-03 | 2015-04-29 | Semiconductor Energy Laboratory Co., Ltd. | MOS thin film transistor and method of fabricating same |
| JP3364180B2 (ja) | 1999-01-18 | 2003-01-08 | 三菱重工業株式会社 | 非晶質シリコン太陽電池 |
| JP3046965B1 (ja) | 1999-02-26 | 2000-05-29 | 鐘淵化学工業株式会社 | 非晶質シリコン系薄膜光電変換装置の製造方法 |
| EP1032052B1 (en) | 1999-02-26 | 2010-07-21 | Kaneka Corporation | Method of manufacturing silicon based thin film photoelectric conversion device |
| JP3589581B2 (ja) | 1999-02-26 | 2004-11-17 | 株式会社カネカ | タンデム型の薄膜光電変換装置の製造方法 |
| IT1312150B1 (it) * | 1999-03-25 | 2002-04-09 | Lpe Spa | Perfezionata camera di reazione per reattore epitassiale |
| US6380480B1 (en) | 1999-05-18 | 2002-04-30 | Nippon Sheet Glass Co., Ltd | Photoelectric conversion device and substrate for photoelectric conversion device |
| US6602606B1 (en) | 1999-05-18 | 2003-08-05 | Nippon Sheet Glass Co., Ltd. | Glass sheet with conductive film, method of manufacturing the same, and photoelectric conversion device using the same |
| US6472248B2 (en) | 1999-07-04 | 2002-10-29 | Canon Kabushiki Kaisha | Microcrystalline series photovoltaic element and process for fabrication of same |
| DE19935046C2 (de) | 1999-07-26 | 2001-07-12 | Schott Glas | Plasma-CVD-Verfahren und Vorrichtung zur Herstellung einer mikrokristallinen Si:H-Schicht auf einem Substrat sowie deren Verwendung |
| JP4459341B2 (ja) | 1999-11-19 | 2010-04-28 | 株式会社カネカ | 太陽電池モジュール |
| JP2001267611A (ja) | 2000-01-13 | 2001-09-28 | Sharp Corp | 薄膜太陽電池及びその製造方法 |
| CN1181561C (zh) | 2000-03-03 | 2004-12-22 | 松下电器产业株式会社 | 半导体装置 |
| JP4124309B2 (ja) * | 2000-03-30 | 2008-07-23 | 三洋電機株式会社 | 光起電力装置の製造方法 |
| JP2001345272A (ja) | 2000-05-31 | 2001-12-14 | Canon Inc | シリコン系薄膜の形成方法、シリコン系薄膜及び光起電力素子 |
| JP2002057359A (ja) | 2000-06-01 | 2002-02-22 | Sharp Corp | 積層型太陽電池 |
| JP2002016006A (ja) * | 2000-06-29 | 2002-01-18 | Mitsubishi Heavy Ind Ltd | 表面処理装置及び表面処理方法 |
| US7351993B2 (en) | 2000-08-08 | 2008-04-01 | Translucent Photonics, Inc. | Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon |
| US6566159B2 (en) | 2000-10-04 | 2003-05-20 | Kaneka Corporation | Method of manufacturing tandem thin-film solar cell |
| US6632993B2 (en) | 2000-10-05 | 2003-10-14 | Kaneka Corporation | Photovoltaic module |
| US6548751B2 (en) | 2000-12-12 | 2003-04-15 | Solarflex Technologies, Inc. | Thin film flexible solar cell |
| JP4229606B2 (ja) | 2000-11-21 | 2009-02-25 | 日本板硝子株式会社 | 光電変換装置用基体およびそれを備えた光電変換装置 |
| TWI313059B (https=) | 2000-12-08 | 2009-08-01 | Sony Corporatio | |
| US6750394B2 (en) | 2001-01-12 | 2004-06-15 | Sharp Kabushiki Kaisha | Thin-film solar cell and its manufacturing method |
| US20030044539A1 (en) | 2001-02-06 | 2003-03-06 | Oswald Robert S. | Process for producing photovoltaic devices |
| JP2002246619A (ja) * | 2001-02-13 | 2002-08-30 | Kanegafuchi Chem Ind Co Ltd | 薄膜光電変換装置の製造方法 |
| JP4433131B2 (ja) | 2001-03-22 | 2010-03-17 | キヤノン株式会社 | シリコン系薄膜の形成方法 |
| JP2003007629A (ja) | 2001-04-03 | 2003-01-10 | Canon Inc | シリコン系膜の形成方法、シリコン系膜および半導体素子 |
| GB0114896D0 (en) | 2001-06-19 | 2001-08-08 | Bp Solar Ltd | Process for manufacturing a solar cell |
| JP2003069061A (ja) | 2001-08-24 | 2003-03-07 | Sharp Corp | 積層型光電変換素子 |
| JP4389585B2 (ja) | 2001-10-19 | 2009-12-24 | 旭硝子株式会社 | 透明導電性酸化物膜付き基体および光電変換素子 |
| US7309832B2 (en) | 2001-12-14 | 2007-12-18 | Midwest Research Institute | Multi-junction solar cell device |
| US6793733B2 (en) | 2002-01-25 | 2004-09-21 | Applied Materials Inc. | Gas distribution showerhead |
| JP2003347572A (ja) | 2002-01-28 | 2003-12-05 | Kanegafuchi Chem Ind Co Ltd | タンデム型薄膜光電変換装置とその製造方法 |
| WO2003073517A1 (en) | 2002-02-27 | 2003-09-04 | Midwest Research Institute | Monolithic photovoltaic energy conversion device |
| WO2003085746A1 (fr) | 2002-04-09 | 2003-10-16 | Kaneka Corporation | Procede de fabrication de convertisseur photoelectrique a films minces en tandem |
| JP2004006537A (ja) | 2002-05-31 | 2004-01-08 | Ishikawajima Harima Heavy Ind Co Ltd | 薄膜形成方法及び装置並びに太陽電池の製造方法並びに太陽電池 |
| US6634572B1 (en) * | 2002-05-31 | 2003-10-21 | John A. Burgener | Enhanced parallel path nebulizer with a large range of flow rates |
| JP2004071716A (ja) | 2002-08-02 | 2004-03-04 | Mitsubishi Heavy Ind Ltd | タンデム型光起電力素子及びその製造方法 |
| US20050189012A1 (en) | 2002-10-30 | 2005-09-01 | Canon Kabushiki Kaisha | Zinc oxide film, photovoltaic device making use of the same, and zinc oxide film formation process |
| US7402747B2 (en) | 2003-02-18 | 2008-07-22 | Kyocera Corporation | Photoelectric conversion device and method of manufacturing the device |
| US6759277B1 (en) * | 2003-02-27 | 2004-07-06 | Sharp Laboratories Of America, Inc. | Crystalline silicon die array and method for assembling crystalline silicon sheets onto substrates |
| JP2004296652A (ja) | 2003-03-26 | 2004-10-21 | Canon Inc | 積層型光起電力素子 |
| JP4241446B2 (ja) | 2003-03-26 | 2009-03-18 | キヤノン株式会社 | 積層型光起電力素子 |
| US20040231590A1 (en) | 2003-05-19 | 2004-11-25 | Ovshinsky Stanford R. | Deposition apparatus for the formation of polycrystalline materials on mobile substrates |
| JP2005135986A (ja) | 2003-10-28 | 2005-05-26 | Kaneka Corp | 積層型光電変換装置 |
| WO2005011001A1 (ja) | 2003-07-24 | 2005-02-03 | Kaneka Corporation | 積層型光電変換装置 |
| JP4063735B2 (ja) | 2003-07-24 | 2008-03-19 | 株式会社カネカ | 積層型光電変換装置を含む薄膜光電変換モジュール |
| JP4068043B2 (ja) | 2003-10-28 | 2008-03-26 | 株式会社カネカ | 積層型光電変換装置 |
| US8083853B2 (en) | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
| US7785672B2 (en) * | 2004-04-20 | 2010-08-31 | Applied Materials, Inc. | Method of controlling the film properties of PECVD-deposited thin films |
| CN102683391B (zh) | 2004-06-04 | 2015-11-18 | 伊利诺伊大学评议会 | 用于制造并组装可印刷半导体元件的方法和设备 |
| JP2006013403A (ja) | 2004-06-29 | 2006-01-12 | Sanyo Electric Co Ltd | 太陽電池、太陽電池モジュール、その製造方法およびその修復方法 |
| JP4025755B2 (ja) | 2004-07-02 | 2007-12-26 | オリンパス株式会社 | 内視鏡 |
| US7429410B2 (en) | 2004-09-20 | 2008-09-30 | Applied Materials, Inc. | Diffuser gravity support |
| US7959987B2 (en) * | 2004-12-13 | 2011-06-14 | Applied Materials, Inc. | Fuel cell conditioning layer |
| US7438760B2 (en) * | 2005-02-04 | 2008-10-21 | Asm America, Inc. | Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition |
| JP4945088B2 (ja) | 2005-04-28 | 2012-06-06 | 三洋電機株式会社 | 積層型光起電力装置 |
| DE102005019225B4 (de) | 2005-04-20 | 2009-12-31 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Heterokontaktsolarzelle mit invertierter Schichtstrukturgeometrie |
| JP2006310694A (ja) | 2005-05-02 | 2006-11-09 | Kaneka Corp | 集積化多接合薄膜光電変換装置 |
| JP2006319068A (ja) | 2005-05-11 | 2006-11-24 | Kaneka Corp | 多接合型シリコン系薄膜光電変換装置、及びその製造方法 |
| US7375378B2 (en) | 2005-05-12 | 2008-05-20 | General Electric Company | Surface passivated photovoltaic devices |
| US7264013B2 (en) * | 2005-05-13 | 2007-09-04 | Air Products And Chemicals, Inc. | Enhanced purge effect in gas conduit |
| EP1734589B1 (en) | 2005-06-16 | 2019-12-18 | Panasonic Intellectual Property Management Co., Ltd. | Method for manufacturing photovoltaic module |
| JP2007035914A (ja) | 2005-07-27 | 2007-02-08 | Kaneka Corp | 薄膜光電変換装置 |
| US8709162B2 (en) | 2005-08-16 | 2014-04-29 | Applied Materials, Inc. | Active cooling substrate support |
| US7256140B2 (en) | 2005-09-20 | 2007-08-14 | United Solar Ovonic Llc | Higher selectivity, method for passivating short circuit current paths in semiconductor devices |
| US20080057220A1 (en) | 2006-01-31 | 2008-03-06 | Robert Bachrach | Silicon photovoltaic cell junction formed from thin film doping source |
| US20080047599A1 (en) | 2006-03-18 | 2008-02-28 | Benyamin Buller | Monolithic integration of nonplanar solar cells |
| US7235736B1 (en) | 2006-03-18 | 2007-06-26 | Solyndra, Inc. | Monolithic integration of cylindrical solar cells |
| US20070227579A1 (en) | 2006-03-30 | 2007-10-04 | Benyamin Buller | Assemblies of cylindrical solar units with internal spacing |
| CN101512721A (zh) | 2006-04-05 | 2009-08-19 | 硅源公司 | 利用层转移工艺制造太阳能电池的方法和结构 |
| WO2007118252A2 (en) | 2006-04-11 | 2007-10-18 | Applied Materials, Inc. | System architecture and method for solar panel formation |
| JP2007305826A (ja) | 2006-05-12 | 2007-11-22 | Kaneka Corp | シリコン系薄膜太陽電池 |
| CN100392808C (zh) | 2006-06-23 | 2008-06-04 | 河北工业大学 | 利用电化学作用去除集成电路晶片表面污染物的方法 |
| US7655542B2 (en) | 2006-06-23 | 2010-02-02 | Applied Materials, Inc. | Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device |
| US20080047603A1 (en) | 2006-08-24 | 2008-02-28 | Guardian Industries Corp. | Front contact with intermediate layer(s) adjacent thereto for use in photovoltaic device and method of making same |
| US20080153280A1 (en) | 2006-12-21 | 2008-06-26 | Applied Materials, Inc. | Reactive sputter deposition of a transparent conductive film |
| US7582515B2 (en) | 2007-01-18 | 2009-09-01 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
| US20080173350A1 (en) | 2007-01-18 | 2008-07-24 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
| JP2008181965A (ja) | 2007-01-23 | 2008-08-07 | Sharp Corp | 積層型光電変換装置及びその製造方法 |
| EP2133924A4 (en) | 2007-02-16 | 2011-04-27 | Mitsubishi Heavy Ind Ltd | PHOTOELECTRIC CONVERTER AND MANUFACTURING METHOD THEREFOR |
-
2006
- 2006-06-23 US US11/426,127 patent/US7655542B2/en not_active Expired - Fee Related
-
2007
- 2007-06-20 WO PCT/US2007/071703 patent/WO2007149945A2/en not_active Ceased
- 2007-06-20 CN CN2007800004176A patent/CN101322251B/zh not_active Expired - Fee Related
- 2007-06-20 KR KR1020077024581A patent/KR20090031492A/ko not_active Ceased
- 2007-06-20 JP JP2009516709A patent/JP2009542008A/ja active Pending
- 2007-06-20 EP EP07812222.3A patent/EP2041797A4/en not_active Withdrawn
- 2007-06-21 TW TW096122366A patent/TW200810138A/zh unknown
-
2008
- 2008-10-24 US US12/258,194 patent/US7648892B2/en not_active Expired - Fee Related
-
2009
- 2009-09-21 US US12/563,837 patent/US7923354B2/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2009542008A5 (https=) | ||
| CN103531658B (zh) | 一种三氧化二铝薄膜的原子层沉积制备方法 | |
| US7648892B2 (en) | Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device | |
| JP5741382B2 (ja) | 薄膜の形成方法及び成膜装置 | |
| TWI427811B (zh) | 供薄膜型太陽能電池用之半導體結構組合及其製造方法 | |
| KR101462154B1 (ko) | 텅스텐 박막 증착방법 | |
| WO2007075369B1 (en) | Low temperature doped silicon layer formation | |
| US8815714B2 (en) | Method of forming a germanium thin film | |
| KR100723882B1 (ko) | 실리콘 나노점 박막을 이용한 실리콘 나노와이어 제조 방법 | |
| AU2002253725B2 (en) | Process and device for the deposition of an at least partially crystalline silicium layer on a substrate | |
| Schropp | Frontiers in HWCVD | |
| JP5481415B2 (ja) | 気相成長装置、及び気相成長方法 | |
| JP5854112B2 (ja) | 薄膜の形成方法及び成膜装置 | |
| AU2002253725A1 (en) | Process and device for the deposition of an at least partially crystalline silicium layer on a substrate | |
| CN103325665A (zh) | 多晶硅层的形成方法 | |
| NL2002980C2 (en) | Method for passivating al least a part of a substrate surface. | |
| CN101859699A (zh) | 多晶硅淀积工艺 | |
| US9087694B2 (en) | Ultra-large grain polycrystalline semiconductors through top-down aluminum induced crystallization (TAIC) | |
| JP2025041304A (ja) | SiCの製造方法 | |
| KR20240170120A (ko) | 실리콘 게르마늄(SiGe)층 형성 방법 | |
| Niikura et al. | High rate growth of microcrystalline silicon films assisted by high density plasma | |
| Song et al. | Characteristiscs of Nanocrystalline Silicon Films Deposited by Cat-CVD below 100° C | |
| CN102169925A (zh) | 一种非晶硅薄膜太阳能电池缓冲层的制备方法 | |
| CN107275190A (zh) | 一种在半导体衬底上制备双层氮化硅薄膜的方法 | |
| JP2008198857A (ja) | 半導体製造装置 |