JP2009224803A - 電圧クランプされたゲートを備えるパワーmosfet - Google Patents
電圧クランプされたゲートを備えるパワーmosfet Download PDFInfo
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- 239000012535 impurity Substances 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 abstract description 25
- 238000010586 diagram Methods 0.000 description 16
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 5
- 239000008186 active pharmaceutical agent Substances 0.000 description 5
- 229910001416 lithium ion Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
Abstract
【解決手段】MOSFETはゲートとソースとを接続する1つ以上のダイオードを含む電圧クランプを備える。電圧クランプは所定の電圧でブレークダウンするように設計され、過大なソース−ゲート電圧によるゲート酸化層の損傷を防ぐ。電圧クランプはMOSFETのソース−ゲート端子間に接続される1つ以上の並列ブランチを含む。各ブランチは少なくとも1つのダイオードを含み、所望のクランプ電圧に応じてゲート−ソース間電圧が所定のレベルに達する際にブレークダウンするか或いは順方向に導通するように接続された一連のダイオードを含む。低クランプ電圧を実現すべくダイオードは典型的には順方向に導通するように接続され、高いクランプ電圧を実現すべくダイオードはアバランシェブレークダウンを生じるように接続される。
【選択図】図7
Description
11 寄生ダイオード
12 バッファ増幅器
30 リチウムイオンバッテリパック
31 電圧クランプ
32 MOSFET
33 電圧クランプ
34 MOSFET
35 バッテリ
36 制御IC
402 電圧クランプ
404 電圧クランプ
406 ブランチ
408 ブランチ
410 電圧クランプ
412A、B ブランチ
416 電圧クランプ
420 電圧クランプ
422 ブランチ
424 ブランチ
800 電圧クランプ
810 電圧クランプ
820 電圧クランプ
830 電圧クランプ
Claims (12)
- ソース、ドレイン及びゲートを備えるMOSFETであって、
前記ソースが絶縁層により前記ゲートから分離されており、
前記MOSFETがさらに前記ソースと前記ゲートとの間に接続された電圧クランプを備え、前記電圧クランプが、前記ソースにおける第1の電圧と前記ゲートにおける第2の電圧との間の差を、前記絶縁層に損傷が生じるのを防ぐように所定のクランプ電圧に制限し、
前記電圧クランプが、前記ソースと前記ゲートとの間に接続された第1のブランチ及び第2のブランチを備え、
前記第1のブランチが、直列に接続された第1の複数のダイオード対を備え、
前記第2のブランチが、直列に接続された第2の複数のダイオード対を備え、
前記各ダイオード対が、アノード−アノード接続された第1及び第2のダイオードを備えることを特徴とするMOSFET。 - 前記電圧クランプが、前記第1のブランチと前記第2のブランチとの間に接続され、かつ前記ゲートに接続された抵抗をさらに備えることを特徴とする請求項1に記載のMOSFET。
- ソース、ドレイン及びゲートを備えるMOSFETであって、
前記ソースが絶縁層により前記ゲートから分離されており、ゲート端子が前記ゲートに接続され、かつソース端子が前記ソースに接続されており、
前記MOSFETがさらに前記ソースと前記ゲートとの間に接続された電圧クランプを備え、前記電圧クランプが、前記ソースにおける第1の電圧と前記ゲートにおける第2の電圧との間の差を、前記絶縁層に損傷が生じるのを防ぐように所定のクランプ電圧に制限し、
前記電圧クランプが、前記ソースと前記ゲートとの間に接続された少なくとも1つのダイオードと、前記ゲートと前記ゲート端子との間に並列に接続された抵抗と第2のダイオードとからなる組み合わせとを備えることを特徴とするMOSFET。 - 前記ソース、前記ドレイン、前記ゲート及び前記電圧クランプが1つの集積回路ダイに形成されることを特徴とする請求項3に記載のMOSFET。
- 前記ダイオードが、P型不純物をドープされた領域とN型不純物をドープされた領域との間の接合部を有することを特徴とする請求項3に記載のMOSFET。
- 前記ゲート端子と前記ゲートとの間に前記組み合わせに直列に接続される第2の抵抗をさらに備え、
前記抵抗が、前記第2の抵抗の抵抗値よりも大きい抵抗値を有することを特徴とする請求項3に記載のMOSFET。 - 前記電圧クランプが直列にアノード−アノード接続された第1及び第2のダイオードを備えることを特徴とする請求項3に記載のMOSFET。
- 前記電圧クランプが直列にアノード−カソード接続された第1及び第2のダイオードを備えることを特徴とする請求項3に記載のMOSFET。
- 前記電圧クランプが、前記ブランチのそれぞれにおいて直列に接続された複数のダイオードを有することを特徴とする請求項3乃至8の何れかに記載のMOSFET。
- ソース、ドレイン及びゲートを備えるMOSFETであって、
前記ソースが絶縁層により前記ゲートから分離されており、
前記MOSFETがさらに前記ソースと前記ゲートとの間に接続された電圧クランプを備え、前記電圧クランプが、前記ソースにおける第1の電圧と前記ゲートにおける第2の電圧との間の差を、前記絶縁層に損傷が生じるのを防ぐように所定のクランプ電圧に制限し、
前記電圧クランプが、前記ソースと前記ゲートとの間に並列に接続された第1及び第2のブランチを備え、
前記第1及び第2のブランチが、複数のダイオードを備え、
前記第1のブランチの全てのダイオードが、前記ソースと前記ゲートとの間で同じ方向を向いており、前記第2のブランチの全てのダイオードが、前記ソースと前記ゲートとの間で、前記第1のブランチの前記複数のダイオードの向きと反対の方向を向いていることを特徴とするMOSFET。 - 前記第1のブランチの全てのダイオードが直列に接続されることを特徴とする請求項10に記載のMOSFET。
- 前記第2のブランチの全てのダイオードが直列に接続されることを特徴とする請求項10に記載のMOSFET。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/306,003 US6172383B1 (en) | 1997-12-31 | 1999-05-05 | Power MOSFET having voltage-clamped gate |
US09/306003 | 1999-05-05 |
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JP2000107465A Division JP4369009B2 (ja) | 1999-05-05 | 2000-04-10 | 電圧クランプされたゲートを備えるパワーmosfet |
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JP2009224803A true JP2009224803A (ja) | 2009-10-01 |
JP5178649B2 JP5178649B2 (ja) | 2013-04-10 |
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JP2000107465A Expired - Fee Related JP4369009B2 (ja) | 1999-05-05 | 2000-04-10 | 電圧クランプされたゲートを備えるパワーmosfet |
JP2009158635A Expired - Lifetime JP5178649B2 (ja) | 1999-05-05 | 2009-07-03 | 電圧クランプされたゲートを備えるパワーmosfet |
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JP2000107465A Expired - Fee Related JP4369009B2 (ja) | 1999-05-05 | 2000-04-10 | 電圧クランプされたゲートを備えるパワーmosfet |
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US (1) | US6172383B1 (ja) |
EP (1) | EP1063757B1 (ja) |
JP (2) | JP4369009B2 (ja) |
KR (1) | KR100625916B1 (ja) |
DE (1) | DE60009214T2 (ja) |
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JP7462653B2 (ja) | 2019-01-10 | 2024-04-05 | アナログ・ディヴァイシス・インターナショナル・アンリミテッド・カンパニー | 高電圧許容型高速インターフェースのための低漏れ電流による電気的過負荷保護 |
Also Published As
Publication number | Publication date |
---|---|
DE60009214T2 (de) | 2005-01-27 |
EP1063757B1 (en) | 2004-03-24 |
EP1063757A3 (en) | 2001-12-05 |
DE60009214D1 (de) | 2004-04-29 |
EP1063757A2 (en) | 2000-12-27 |
JP5178649B2 (ja) | 2013-04-10 |
JP4369009B2 (ja) | 2009-11-18 |
KR20000077143A (ko) | 2000-12-26 |
KR100625916B1 (ko) | 2006-09-20 |
US6172383B1 (en) | 2001-01-09 |
JP2000349235A (ja) | 2000-12-15 |
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