JP2009152567A5 - - Google Patents
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- JP2009152567A5 JP2009152567A5 JP2008294268A JP2008294268A JP2009152567A5 JP 2009152567 A5 JP2009152567 A5 JP 2009152567A5 JP 2008294268 A JP2008294268 A JP 2008294268A JP 2008294268 A JP2008294268 A JP 2008294268A JP 2009152567 A5 JP2009152567 A5 JP 2009152567A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- single crystal
- forming
- layer
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008294268A JP5248995B2 (ja) | 2007-11-30 | 2008-11-18 | 光電変換装置の製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007310341 | 2007-11-30 | ||
| JP2007310341 | 2007-11-30 | ||
| JP2008294268A JP5248995B2 (ja) | 2007-11-30 | 2008-11-18 | 光電変換装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009152567A JP2009152567A (ja) | 2009-07-09 |
| JP2009152567A5 true JP2009152567A5 (https=) | 2012-01-05 |
| JP5248995B2 JP5248995B2 (ja) | 2013-07-31 |
Family
ID=40460006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008294268A Expired - Fee Related JP5248995B2 (ja) | 2007-11-30 | 2008-11-18 | 光電変換装置の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US7858431B2 (https=) |
| EP (1) | EP2065943A3 (https=) |
| JP (1) | JP5248995B2 (https=) |
| CN (1) | CN101447526B (https=) |
Families Citing this family (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
| US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
| JP5248994B2 (ja) * | 2007-11-30 | 2013-07-31 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
| EP2075850A3 (en) * | 2007-12-28 | 2011-08-24 | Semiconductor Energy Laboratory Co, Ltd. | Photoelectric conversion device and manufacturing method thereof |
| JP5572307B2 (ja) * | 2007-12-28 | 2014-08-13 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
| JP5438986B2 (ja) | 2008-02-19 | 2014-03-12 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
| JP5654206B2 (ja) * | 2008-03-26 | 2015-01-14 | 株式会社半導体エネルギー研究所 | Soi基板の作製方法及び該soi基板を用いた半導体装置 |
| US20090293954A1 (en) * | 2008-05-30 | 2009-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric Conversion Device And Method For Manufacturing The Same |
| US8338218B2 (en) * | 2008-06-26 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device module and manufacturing method of the photoelectric conversion device module |
| JP5552276B2 (ja) * | 2008-08-01 | 2014-07-16 | 株式会社半導体エネルギー研究所 | Soi基板の作製方法 |
| US8679959B2 (en) * | 2008-09-03 | 2014-03-25 | Sionyx, Inc. | High sensitivity photodetectors, imaging arrays, and high efficiency photovoltaic devices produced using ion implantation and femtosecond laser irradiation |
| SG162675A1 (en) * | 2008-12-15 | 2010-07-29 | Semiconductor Energy Lab | Manufacturing method of soi substrate and manufacturing method of semiconductor device |
| US8207051B2 (en) | 2009-04-28 | 2012-06-26 | Sionyx, Inc. | Semiconductor surface modification |
| JP5415853B2 (ja) | 2009-07-10 | 2014-02-12 | 東京エレクトロン株式会社 | 表面処理方法 |
| US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| KR101893331B1 (ko) * | 2009-09-17 | 2018-08-30 | 사이오닉스, 엘엘씨 | 감광성 이미징 장치 및 이와 관련된 방법 |
| US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| JP5695312B2 (ja) * | 2009-10-27 | 2015-04-01 | ローム株式会社 | 有機el装置 |
| JP5706670B2 (ja) * | 2009-11-24 | 2015-04-22 | 株式会社半導体エネルギー研究所 | Soi基板の作製方法 |
| US8704083B2 (en) | 2010-02-11 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and fabrication method thereof |
| US8741394B2 (en) | 2010-03-25 | 2014-06-03 | Novellus Systems, Inc. | In-situ deposition of film stacks |
| US9028924B2 (en) | 2010-03-25 | 2015-05-12 | Novellus Systems, Inc. | In-situ deposition of film stacks |
| US8709551B2 (en) * | 2010-03-25 | 2014-04-29 | Novellus Systems, Inc. | Smooth silicon-containing films |
| US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
| US8614495B2 (en) | 2010-04-23 | 2013-12-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Back side defect reduction for back side illuminated image sensor |
| JP4967066B2 (ja) * | 2010-04-27 | 2012-07-04 | 東京エレクトロン株式会社 | アモルファスシリコン膜の成膜方法および成膜装置 |
| JP5755931B2 (ja) | 2010-04-28 | 2015-07-29 | 株式会社半導体エネルギー研究所 | 半導体膜の作製方法、電極の作製方法、2次電池の作製方法、および太陽電池の作製方法 |
| US9076909B2 (en) * | 2010-06-18 | 2015-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for manufacturing the same |
| WO2011160130A2 (en) | 2010-06-18 | 2011-12-22 | Sionyx, Inc | High speed photosensitive devices and associated methods |
| WO2012088319A2 (en) | 2010-12-21 | 2012-06-28 | Sionyx, Inc. | Semiconductor devices having reduced substrate damage and associated methods |
| JP5866768B2 (ja) * | 2011-02-16 | 2016-02-17 | セイコーエプソン株式会社 | 光電変換装置、電子機器 |
| US9437758B2 (en) | 2011-02-21 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| CN103636006B (zh) | 2011-03-10 | 2016-08-17 | 西奥尼克斯公司 | 三维传感器、系统和相关的方法 |
| JP5692801B2 (ja) * | 2011-03-30 | 2015-04-01 | 独立行政法人産業技術総合研究所 | 半導体の製造方法及び半導体装置 |
| JP5584645B2 (ja) * | 2011-03-31 | 2014-09-03 | 株式会社沖データ | 半導体発光装置およびヘッドマウントディスプレイ装置 |
| US20120291859A1 (en) * | 2011-05-17 | 2012-11-22 | Christopher Vineis | Multi-Junction Semiconductor Photovoltaic Apparatus and Methods |
| US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
| WO2013010127A2 (en) | 2011-07-13 | 2013-01-17 | Sionyx, Inc. | Biometric imaging devices and associated methods |
| JP2013058562A (ja) | 2011-09-07 | 2013-03-28 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
| US8865507B2 (en) | 2011-09-16 | 2014-10-21 | Sionyx, Inc. | Integrated visible and infrared imager devices and associated methods |
| US9583651B2 (en) * | 2011-12-26 | 2017-02-28 | Solexel, Inc. | Systems and methods for enhanced light trapping in solar cells |
| US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
| US9165788B2 (en) | 2012-04-06 | 2015-10-20 | Novellus Systems, Inc. | Post-deposition soft annealing |
| US9117668B2 (en) | 2012-05-23 | 2015-08-25 | Novellus Systems, Inc. | PECVD deposition of smooth silicon films |
| US9388491B2 (en) | 2012-07-23 | 2016-07-12 | Novellus Systems, Inc. | Method for deposition of conformal films with catalysis assisted low temperature CVD |
| US10094988B2 (en) | 2012-08-31 | 2018-10-09 | Micron Technology, Inc. | Method of forming photonics structures |
| CN102899633B (zh) * | 2012-09-27 | 2014-05-21 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | 一种选择性发射极电池掩膜的制备方法 |
| US8946062B2 (en) * | 2012-11-21 | 2015-02-03 | Guardian Industries Corp. | Polycrystalline silicon thick films for photovoltaic devices or the like, and methods of making same |
| KR20140082012A (ko) * | 2012-12-21 | 2014-07-02 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
| US20140224434A1 (en) * | 2013-02-14 | 2014-08-14 | Crestron Electronics, Inc. | Motorized roller shade with photovoltaic shade material |
| KR20150130303A (ko) | 2013-02-15 | 2015-11-23 | 사이오닉스, 아이엔씨. | 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서 |
| US9939251B2 (en) | 2013-03-15 | 2018-04-10 | Sionyx, Llc | Three dimensional imaging utilizing stacked imager devices and associated methods |
| US8895415B1 (en) | 2013-05-31 | 2014-11-25 | Novellus Systems, Inc. | Tensile stressed doped amorphous silicon |
| US9209345B2 (en) | 2013-06-29 | 2015-12-08 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
| JP6459948B2 (ja) * | 2015-12-15 | 2019-01-30 | 株式会社Sumco | 半導体エピタキシャルウェーハの製造方法および固体撮像素子の製造方法 |
| US10199526B2 (en) * | 2017-04-28 | 2019-02-05 | Infineon Technologies Ag | Radiation detector and a method for forming a semiconductor device |
| CN113432229B (zh) * | 2021-07-08 | 2023-01-10 | 深圳讴法科技有限公司 | 一种智能家居防护用分段式空气甲醛净化器 |
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| JPH01289173A (ja) * | 1988-05-16 | 1989-11-21 | Sharp Corp | 太陽電池 |
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| JPH0644638A (ja) | 1992-07-24 | 1994-02-18 | Sony Corp | 録音装置 |
| JP3360919B2 (ja) | 1993-06-11 | 2003-01-07 | 三菱電機株式会社 | 薄膜太陽電池の製造方法,及び薄膜太陽電池 |
| JP3352340B2 (ja) | 1995-10-06 | 2002-12-03 | キヤノン株式会社 | 半導体基体とその製造方法 |
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| CA2256699C (en) * | 1996-05-28 | 2003-02-25 | The Trustees Of Columbia University In The City Of New York | Crystallization processing of semiconductor film regions on a substrate, and devices made therewith |
| JPH1093122A (ja) * | 1996-09-10 | 1998-04-10 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜太陽電池の製造方法 |
| ATE261612T1 (de) * | 1996-12-18 | 2004-03-15 | Canon Kk | Vefahren zum herstellen eines halbleiterartikels unter verwendung eines substrates mit einer porösen halbleiterschicht |
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| JPH10335683A (ja) * | 1997-05-28 | 1998-12-18 | Ion Kogaku Kenkyusho:Kk | タンデム型太陽電池およびその製造方法 |
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| JP2000012864A (ja) | 1998-06-22 | 2000-01-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2000124092A (ja) | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | 水素イオン注入剥離法によってsoiウエーハを製造する方法およびこの方法で製造されたsoiウエーハ |
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| JP2000349266A (ja) * | 1999-03-26 | 2000-12-15 | Canon Inc | 半導体部材の製造方法、半導体基体の利用方法、半導体部材の製造システム、半導体部材の生産管理方法及び堆積膜形成装置の利用方法 |
| JP2001015721A (ja) * | 1999-04-30 | 2001-01-19 | Canon Inc | 複合部材の分離方法及び薄膜の製造方法 |
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| JP4452789B2 (ja) * | 1999-09-01 | 2010-04-21 | 独立行政法人 日本原子力研究開発機構 | シリコン系結晶薄板の製造方法および光電変換素子用基板の製造方法 |
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| JP2002348198A (ja) | 2001-05-28 | 2002-12-04 | Nissin Electric Co Ltd | 半導体素子エピタキシャル成長用基板及びその製造方法 |
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| JP2005268682A (ja) | 2004-03-22 | 2005-09-29 | Canon Inc | 半導体基材及び太陽電池の製造方法 |
| KR100615096B1 (ko) * | 2004-11-15 | 2006-08-22 | 삼성전자주식회사 | 다중 채널을 갖는 모스 트랜지스터 제조방법 |
| KR101100426B1 (ko) * | 2005-05-10 | 2011-12-30 | 삼성전자주식회사 | 단결정 실리콘층을 포함하는 반도체 소자, 이를 포함하는반도체 장치 및 평면표시장치와 반도체 소자의 제조 방법 |
| JP4644577B2 (ja) * | 2005-09-30 | 2011-03-02 | セイコーエプソン株式会社 | 半導体装置および半導体装置の製造方法 |
| CN101512721A (zh) | 2006-04-05 | 2009-08-19 | 硅源公司 | 利用层转移工艺制造太阳能电池的方法和结构 |
| KR100769065B1 (ko) | 2006-05-18 | 2007-10-22 | 엘지전자 주식회사 | 플라즈마 디스플레이 장치의 히트싱크 |
| JP2008112847A (ja) | 2006-10-30 | 2008-05-15 | Shin Etsu Chem Co Ltd | 単結晶シリコン太陽電池の製造方法及び単結晶シリコン太陽電池 |
| CN101652867B (zh) | 2007-04-06 | 2012-08-08 | 株式会社半导体能源研究所 | 光伏器件及其制造方法 |
| JP5248994B2 (ja) | 2007-11-30 | 2013-07-31 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
| JP5286046B2 (ja) * | 2007-11-30 | 2013-09-11 | 株式会社半導体エネルギー研究所 | 光電変換装置の製造方法 |
-
2008
- 2008-11-18 JP JP2008294268A patent/JP5248995B2/ja not_active Expired - Fee Related
- 2008-11-26 US US12/324,220 patent/US7858431B2/en not_active Expired - Fee Related
- 2008-11-28 EP EP08020763.2A patent/EP2065943A3/en not_active Withdrawn
- 2008-11-28 CN CN2008101796342A patent/CN101447526B/zh not_active Expired - Fee Related
-
2010
- 2010-12-23 US US12/977,213 patent/US8143087B2/en not_active Expired - Fee Related
-
2012
- 2012-03-22 US US13/426,655 patent/US8507313B2/en not_active Expired - Fee Related
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