JP2009009935A - 製造装置および発光装置の作製方法 - Google Patents

製造装置および発光装置の作製方法 Download PDF

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Publication number
JP2009009935A
JP2009009935A JP2008137564A JP2008137564A JP2009009935A JP 2009009935 A JP2009009935 A JP 2009009935A JP 2008137564 A JP2008137564 A JP 2008137564A JP 2008137564 A JP2008137564 A JP 2008137564A JP 2009009935 A JP2009009935 A JP 2009009935A
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JP
Japan
Prior art keywords
substrate
light
layer
irradiated
laser beam
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008137564A
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English (en)
Japanese (ja)
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JP2009009935A5 (https=
Inventor
Yoshiharu Hirakata
吉晴 平形
Toshio Ikeda
寿雄 池田
Takahiro Ibe
隆広 井辺
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008137564A priority Critical patent/JP2009009935A/ja
Publication of JP2009009935A publication Critical patent/JP2009009935A/ja
Publication of JP2009009935A5 publication Critical patent/JP2009009935A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B23K26/0661—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks disposed on the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/042—Automatically aligning the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0732—Shaping the laser spot into a rectangular shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
JP2008137564A 2007-06-01 2008-05-27 製造装置および発光装置の作製方法 Withdrawn JP2009009935A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008137564A JP2009009935A (ja) 2007-06-01 2008-05-27 製造装置および発光装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007147413 2007-06-01
JP2008137564A JP2009009935A (ja) 2007-06-01 2008-05-27 製造装置および発光装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013021283A Division JP2013127977A (ja) 2007-06-01 2013-02-06 発光装置の作製方法及び発光装置

Publications (2)

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JP2009009935A true JP2009009935A (ja) 2009-01-15
JP2009009935A5 JP2009009935A5 (https=) 2011-06-16

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JP2008137564A Withdrawn JP2009009935A (ja) 2007-06-01 2008-05-27 製造装置および発光装置の作製方法
JP2013021283A Withdrawn JP2013127977A (ja) 2007-06-01 2013-02-06 発光装置の作製方法及び発光装置
JP2015001480A Expired - Fee Related JP5957098B2 (ja) 2007-06-01 2015-01-07 発光装置の作製方法

Family Applications After (2)

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JP2013021283A Withdrawn JP2013127977A (ja) 2007-06-01 2013-02-06 発光装置の作製方法及び発光装置
JP2015001480A Expired - Fee Related JP5957098B2 (ja) 2007-06-01 2015-01-07 発光装置の作製方法

Country Status (4)

Country Link
US (2) US8232038B2 (https=)
JP (3) JP2009009935A (https=)
KR (1) KR101563237B1 (https=)
CN (1) CN101314841B (https=)

Cited By (7)

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EP2110540A2 (en) 2008-04-15 2009-10-21 Denso Corporation Fuel injector with fuel pressure sensor
JP2011023731A (ja) * 2009-09-15 2011-02-03 Von Ardenne Anlagentechnik Gmbh 微細構造を製造するための方法及び装置
WO2012133203A1 (ja) * 2011-03-30 2012-10-04 シャープ株式会社 蒸着膜パターンの形成方法および有機エレクトロルミネッセンス表示装置の製造方法
JP2013016480A (ja) * 2011-06-30 2013-01-24 Samsung Display Co Ltd レーザー熱転写装置及びこれを用いた有機発光表示装置の製造方法
JP2013073822A (ja) * 2011-09-28 2013-04-22 Ulvac Japan Ltd 転写成膜装置
JP2019023739A (ja) * 2013-12-02 2019-02-14 株式会社半導体エネルギー研究所 装置
JP2024096333A (ja) * 2017-06-28 2024-07-12 信越化学工業株式会社 レーザ加工方法、縮小投影光学系、基板の製造方法及びレーザ加工装置

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US8080811B2 (en) 2007-12-28 2011-12-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing evaporation donor substrate and light-emitting device
WO2009099002A1 (en) * 2008-02-04 2009-08-13 Semiconductor Energy Laboratory Co., Ltd. Deposition method and method for manufacturing light-emitting device
WO2009107548A1 (en) * 2008-02-29 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
JP2009231277A (ja) * 2008-02-29 2009-10-08 Semiconductor Energy Lab Co Ltd 製造装置
JP5416987B2 (ja) 2008-02-29 2014-02-12 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
JP5079722B2 (ja) 2008-03-07 2012-11-21 株式会社半導体エネルギー研究所 発光装置の作製方法
JP5238544B2 (ja) * 2008-03-07 2013-07-17 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
US8182863B2 (en) 2008-03-17 2012-05-22 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
US7993945B2 (en) * 2008-04-11 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
US7932112B2 (en) * 2008-04-14 2011-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
US8409672B2 (en) * 2008-04-24 2013-04-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device
JP5159689B2 (ja) * 2008-04-25 2013-03-06 株式会社半導体エネルギー研究所 発光装置の作製方法
KR101629637B1 (ko) * 2008-05-29 2016-06-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 성막방법 및 발광장치의 제조방법
US7919340B2 (en) * 2008-06-04 2011-04-05 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
US8574709B2 (en) * 2008-07-21 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Deposition donor substrate and method for manufacturing light-emitting device
JP5469950B2 (ja) * 2008-08-08 2014-04-16 株式会社半導体エネルギー研究所 発光装置の作製方法
US8486736B2 (en) * 2008-10-20 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
JP5291607B2 (ja) * 2008-12-15 2013-09-18 株式会社半導体エネルギー研究所 発光装置の作製方法
KR101023133B1 (ko) * 2009-03-19 2011-03-18 삼성모바일디스플레이주식회사 유기 발광 표시 장치
JP2012124478A (ja) * 2010-11-19 2012-06-28 Semiconductor Energy Lab Co Ltd 照明装置
KR101328979B1 (ko) 2011-06-30 2013-11-13 삼성디스플레이 주식회사 유기 발광 표시장치
KR101787450B1 (ko) * 2011-08-09 2017-10-19 삼성디스플레이 주식회사 표시 장치
EP2591875B1 (de) * 2011-11-09 2017-01-25 Leister Technologies AG Laser mit Strahltransformationslinse
KR101959975B1 (ko) * 2012-07-10 2019-07-16 삼성디스플레이 주식회사 유기층 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 및 이에 따라 제조된 유기 발광 디스플레이 장치
EP2731126A1 (en) 2012-11-09 2014-05-14 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method for bonding bare chip dies
CN104752469B (zh) 2013-12-31 2018-08-03 昆山国显光电有限公司 一种像素结构及采用该像素结构的有机发光显示器
FR3025936B1 (fr) * 2014-09-11 2016-12-02 Saint Gobain Procede de recuit par lampes flash
CN105679967B (zh) * 2014-11-18 2018-06-26 昆山国显光电有限公司 掩膜板、制备有机发光显示装置的方法
CN104795425A (zh) * 2015-03-30 2015-07-22 京东方科技集团股份有限公司 有机发光二极管触控显示屏及其制作方法
KR102388724B1 (ko) * 2015-08-21 2022-04-21 삼성디스플레이 주식회사 증착용 마스크 제조 방법
KR102404575B1 (ko) 2015-10-12 2022-06-03 삼성디스플레이 주식회사 증착 장치와 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
US20200111846A1 (en) * 2017-03-30 2020-04-09 Qualtec Co., Ltd. EL Display-Panel Manufacturing Method, EL Display-Panel Manufacturing Apparatus, EL Display panel, and EL Display Device
JP7020896B2 (ja) * 2017-12-14 2022-02-16 株式会社キーエンス レーザ加工装置
US10138539B1 (en) * 2018-04-03 2018-11-27 Shiping Cheng Method of managing coating uniformity with an optical thickness monitoring system
US11094530B2 (en) 2019-05-14 2021-08-17 Applied Materials, Inc. In-situ curing of color conversion layer
US11239213B2 (en) * 2019-05-17 2022-02-01 Applied Materials, Inc. In-situ curing of color conversion layer in recess
US10948830B1 (en) * 2019-12-23 2021-03-16 Waymo Llc Systems and methods for lithography
KR20230041786A (ko) 2020-07-24 2023-03-24 어플라이드 머티어리얼스, 인코포레이티드 Uv-led 경화를 위한 티올계 가교제들을 갖는 양자점 배합물들
CN115295561B (zh) * 2020-08-24 2025-08-05 武汉天马微电子有限公司 一种显示面板、显示装置及制作方法
US11646397B2 (en) 2020-08-28 2023-05-09 Applied Materials, Inc. Chelating agents for quantum dot precursor materials in color conversion layers for micro-LEDs
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