FR3025936B1 - Procede de recuit par lampes flash - Google Patents

Procede de recuit par lampes flash

Info

Publication number
FR3025936B1
FR3025936B1 FR1458520A FR1458520A FR3025936B1 FR 3025936 B1 FR3025936 B1 FR 3025936B1 FR 1458520 A FR1458520 A FR 1458520A FR 1458520 A FR1458520 A FR 1458520A FR 3025936 B1 FR3025936 B1 FR 3025936B1
Authority
FR
France
Prior art keywords
flash lamps
reclaiming
reclaiming flash
lamps
flash
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1458520A
Other languages
English (en)
Other versions
FR3025936A1 (fr
Inventor
Lorenzo Canova
Emmanuel Mimoun
Brice Dubost
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Original Assignee
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Glass France SAS, Compagnie de Saint Gobain SA filed Critical Saint Gobain Glass France SAS
Priority to FR1458520A priority Critical patent/FR3025936B1/fr
Priority to TW104126704A priority patent/TWI663637B/zh
Priority to EA201790593A priority patent/EA201790593A1/ru
Priority to KR1020177006735A priority patent/KR20170051447A/ko
Priority to JP2017513808A priority patent/JP2017536689A/ja
Priority to CN201580048670.3A priority patent/CN106605290A/zh
Priority to US15/507,883 priority patent/US20170291848A1/en
Priority to EP15767209.8A priority patent/EP3192095A1/fr
Priority to CA2957845A priority patent/CA2957845A1/fr
Priority to PCT/FR2015/052238 priority patent/WO2016038269A1/fr
Priority to BR112017002958A priority patent/BR112017002958A2/pt
Priority to MX2017002996A priority patent/MX2017002996A/es
Priority to AU2015314079A priority patent/AU2015314079A1/en
Publication of FR3025936A1 publication Critical patent/FR3025936A1/fr
Application granted granted Critical
Publication of FR3025936B1 publication Critical patent/FR3025936B1/fr
Priority to CONC2017/0002325A priority patent/CO2017002325A2/es
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3657Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having optical properties
    • C03C17/366Low-emissivity or solar control coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5806Thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02565Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884Manufacture of transparent electrodes, e.g. TCO, ITO
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/21Oxides
    • C03C2217/24Doped oxides
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/25Metals
    • C03C2217/251Al, Cu, Mg or noble metals
    • C03C2217/254Noble metals
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/20Materials for coating a single layer on glass
    • C03C2217/25Metals
    • C03C2217/251Al, Cu, Mg or noble metals
    • C03C2217/254Noble metals
    • C03C2217/256Ag
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/30Aspects of methods for coating glass not covered above
    • C03C2218/32After-treatment
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
FR1458520A 2014-09-11 2014-09-11 Procede de recuit par lampes flash Expired - Fee Related FR3025936B1 (fr)

Priority Applications (14)

Application Number Priority Date Filing Date Title
FR1458520A FR3025936B1 (fr) 2014-09-11 2014-09-11 Procede de recuit par lampes flash
TW104126704A TWI663637B (zh) 2014-09-11 2015-08-17 藉由閃光燈退火的方法
MX2017002996A MX2017002996A (es) 2014-09-11 2015-08-20 Método de fijacion termica utilizando lamparas de destello.
JP2017513808A JP2017536689A (ja) 2014-09-11 2015-08-20 フラッシュランプを使用するアニーリング方法
CN201580048670.3A CN106605290A (zh) 2014-09-11 2015-08-20 使用闪光灯的退火方法
US15/507,883 US20170291848A1 (en) 2014-09-11 2015-08-20 Annealing method using flash lamps
EP15767209.8A EP3192095A1 (fr) 2014-09-11 2015-08-20 Procédé de recuit par lampes flash
CA2957845A CA2957845A1 (fr) 2014-09-11 2015-08-20 Procede de recuit par lampes flash
EA201790593A EA201790593A1 (ru) 2014-09-11 2015-08-20 Способ отжига при помощи ламп-вспышек
BR112017002958A BR112017002958A2 (pt) 2014-09-11 2015-08-20 processo de recozimento por lâmpadas flash
KR1020177006735A KR20170051447A (ko) 2014-09-11 2015-08-20 플래시 램프를 이용한 어닐링 방법
AU2015314079A AU2015314079A1 (en) 2014-09-11 2015-08-20 Annealing method using flash lamps
PCT/FR2015/052238 WO2016038269A1 (fr) 2014-09-11 2015-08-20 Procédé de recuit par lampes flash
CONC2017/0002325A CO2017002325A2 (es) 2014-09-11 2017-03-09 Procedimiento de recocción por lámparas flash

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1458520A FR3025936B1 (fr) 2014-09-11 2014-09-11 Procede de recuit par lampes flash

Publications (2)

Publication Number Publication Date
FR3025936A1 FR3025936A1 (fr) 2016-03-18
FR3025936B1 true FR3025936B1 (fr) 2016-12-02

Family

ID=51866184

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1458520A Expired - Fee Related FR3025936B1 (fr) 2014-09-11 2014-09-11 Procede de recuit par lampes flash

Country Status (14)

Country Link
US (1) US20170291848A1 (fr)
EP (1) EP3192095A1 (fr)
JP (1) JP2017536689A (fr)
KR (1) KR20170051447A (fr)
CN (1) CN106605290A (fr)
AU (1) AU2015314079A1 (fr)
BR (1) BR112017002958A2 (fr)
CA (1) CA2957845A1 (fr)
CO (1) CO2017002325A2 (fr)
EA (1) EA201790593A1 (fr)
FR (1) FR3025936B1 (fr)
MX (1) MX2017002996A (fr)
TW (1) TWI663637B (fr)
WO (1) WO2016038269A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11220455B2 (en) 2017-08-04 2022-01-11 Vitro Flat Glass Llc Flash annealing of silver coatings

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3042492B1 (fr) * 2015-10-16 2018-01-19 Saint-Gobain Glass France Procede de recuit rapide d'un empilement de couches minces contenant une surcouche a base d'indium
KR102118365B1 (ko) 2017-04-21 2020-06-04 주식회사 엘지화학 유기전자소자 봉지용 조성물
US11384425B2 (en) * 2017-07-13 2022-07-12 Purdue Research Foundation Method of enhancing electrical conduction in gallium-doped zinc oxide films and films made therefrom
US20190041550A1 (en) * 2017-08-04 2019-02-07 Vitro Flat Glass Llc Flash Annealing of Transparent Conductive Oxide and Semiconductor Coatings
DE102019134818A1 (de) * 2019-02-16 2020-08-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Verfahren zum Erhöhen der Festigkeit eines Glassubstrates

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3204986B2 (ja) * 1996-05-28 2001-09-04 ザ トラスティース オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 基板上の半導体膜領域の結晶化処理及びこの方法により製造されたデバイス
US6555449B1 (en) * 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
TWI221102B (en) * 2002-08-30 2004-09-21 Sumitomo Heavy Industries Laser material processing method and processing device
KR100906964B1 (ko) * 2002-09-25 2009-07-08 삼성전자주식회사 유기 전계발광 구동 소자와 이를 갖는 유기 전계발광 표시패널
JP2004303792A (ja) * 2003-03-28 2004-10-28 Seiko Epson Corp フラッシュランプの照射装置
CA2588343C (fr) * 2004-11-24 2011-11-08 Nanotechnologies, Inc. Utilisations electriques, de revetement metallique et catalytiques de compositions de nanomateriaux metalliques
FR2911130B1 (fr) * 2007-01-05 2009-11-27 Saint Gobain Procede de depot de couche mince et produit obtenu
KR101563237B1 (ko) * 2007-06-01 2015-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 제조장치 및 발광장치 제작방법
JP5209237B2 (ja) * 2007-06-19 2013-06-12 大日本スクリーン製造株式会社 熱処理装置
US8569155B2 (en) * 2008-02-29 2013-10-29 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
JP5640890B2 (ja) * 2011-05-23 2014-12-17 ウシオ電機株式会社 光照射装置および光照射方法
DE102011089884B4 (de) * 2011-08-19 2016-03-10 Von Ardenne Gmbh Niedrigemittierende Beschichtung und Verfahren zur Herstellung eines niedrigemittierenden Schichtsystems
FR2989388B1 (fr) 2012-04-17 2019-10-18 Saint-Gobain Glass France Procede d'obtention d'un substrat muni d'un revetement
JP2014027252A (ja) * 2012-06-19 2014-02-06 Dainippon Screen Mfg Co Ltd 熱処理装置および熱処理方法
JP2014011256A (ja) * 2012-06-28 2014-01-20 Dainippon Screen Mfg Co Ltd 熱処理方法および熱処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11220455B2 (en) 2017-08-04 2022-01-11 Vitro Flat Glass Llc Flash annealing of silver coatings

Also Published As

Publication number Publication date
TW201616555A (zh) 2016-05-01
AU2015314079A1 (en) 2017-04-13
CN106605290A (zh) 2017-04-26
KR20170051447A (ko) 2017-05-11
US20170291848A1 (en) 2017-10-12
CA2957845A1 (fr) 2016-03-17
WO2016038269A1 (fr) 2016-03-17
TWI663637B (zh) 2019-06-21
CO2017002325A2 (es) 2017-06-20
EA201790593A1 (ru) 2017-06-30
FR3025936A1 (fr) 2016-03-18
EP3192095A1 (fr) 2017-07-19
BR112017002958A2 (pt) 2017-12-05
MX2017002996A (es) 2017-06-19
JP2017536689A (ja) 2017-12-07

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