TWI221102B - Laser material processing method and processing device - Google Patents

Laser material processing method and processing device Download PDF

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Publication number
TWI221102B
TWI221102B TW092123789A TW92123789A TWI221102B TW I221102 B TWI221102 B TW I221102B TW 092123789 A TW092123789 A TW 092123789A TW 92123789 A TW92123789 A TW 92123789A TW I221102 B TWI221102 B TW I221102B
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Taiwan
Prior art keywords
laser beam
laser
processing
lens
incident
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TW092123789A
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Chinese (zh)
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TW200408486A (en
Inventor
Shiro Hamada
Jiro Yamamoto
Tomoyuki Yamaguchi
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Sumitomo Heavy Industries
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Publication of TWI221102B publication Critical patent/TWI221102B/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0652Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising prisms
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/362Laser etching
    • B23K26/364Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • B23K26/382Removing material by boring or cutting by boring
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • B23K26/382Removing material by boring or cutting by boring
    • B23K26/389Removing material by boring or cutting by boring of fluid openings, e.g. nozzles, jets

Abstract

The section of a laser beam is shaped by a mask of a through hole, and a laser beam passed through the through-hole is condensed by a lens and irradiates onto the surface of a work so as to form the image of the through hole of the mask on the surface of a work. A laser beam passed through the lens is manipulated so as to move the incident position of a laser beam on the surface of the work, and the through hole is kept imaged on the surface of the work even during laser beam scanning to thereby process the work, whereby it is possible to enable a quality laser processing with a good time efficiency.

Description

1221102 (1) 玖、發明說明 【發明所屬之技術領域】 本發明係關於將雷射光束照射加工對象物以進行加工 之雷射加工方法及雷射加工裝置。 【先前技術】 圖9爲可形成溝槽之習知雷射加工裝置的槪略顯示圖 〇 例如自雷射光源5 1射出1 kHz頻率之脈衝雷射光束。 雷射光束即在均勻器5 2被均勻化射束剖面之脈衝能量密 度(頂端平坦)後,復由具有例如圓形貫通孔之遮罩5 3將 剖面形狀予以整形爲圓形。且在反射鏡5 4反射,經過聚 光鏡5 5而射入基板5 6。基板5 6則是例如在玻璃基底材 料上形成有ITO膜之基板。雷射光束即射入於基板56之 I TO膜。ITO膜表面之雷射光束的光束點爲如直徑0.2mm 之圓形。基板56被裝載於XY載物台57上。而藉該XY 載物台5 7將基板5 6移動於二維平面內,乃能使脈衝雷射 光束之射入位置在基板56上表面內移動。 首先,移動XY載物台57促使基板56以50%重複率 被照射脈衝雷射光束,在基板56之ITO膜予以形成溝槽 。在此所謂重複率,係爲對於圓直徑每射擊一次脈衝雷射 光束時沿圓半徑方向移動之距離的比率之意。 圖10A爲以50%重複率被照射雷射光束而開鑿連續 性孔穴,在ITO膜形成溝槽之基板56槪略平面圖。以粗 (2) 1221102 線條顯示溝槽之開口。將依存於射入I τ〇膜之雷射光束的 光束點形狀之孔穴予以連續性開鑿結果,而形成溝槽。因 此’沿溝槽較長方向之開口側緣具有圓形光束點外周一部 分所致的凹凸。又,所照射雷射光束之頻率爲】k Η ζ、基 板50之ΙΤΟ膜上的雷射光束之光束點爲直徑0.2mm圓形 時’加工速度則呈lOOmrn/s。主要是,被XY載物台57 之動作速度予以速率控制,致考慮加工形狀之均勻性,而 無法採取更加快速之加工速度。 爲使I Τ Ο膜所形成溝槽開口側緣接近於直線狀,乃使 用增高重複率之方法。例如移動X Y載物台5 7,促使以 9 0 %重複率照射脈衝雷射光束,而在基板5 6之I Τ Ο膜上 形成溝槽。 圖】0B爲藉以90%重複率所照射脈衝雷射光束被開鑿 連續性孔穴,在ITO膜形成溝槽之基板56槪略平面圖。 與圖1 〇 A同樣,將溝槽之開口以粗線條顯示。沿溝槽較 長方向之開口側緣雖接近於直線狀。惟,由於以90%重複 率照射雷射光束,致加工速度爲50 %重複率時之1 / 5、即 2 0mm / s。亦即,雖能改善開口形狀卻會惡化加工之時間 效率。 圖1 1爲沿圖1 0 A之PQ線切斷的基板5 6槪略剖面圖 。在玻璃基底材料上所形成ITO膜上形成有溝槽,溝槽側 面對於基板5 6表面呈傾斜。惟,溝槽具有更峭立之側面 形狀較佳。 本發明之目的,即在提供一種能以良好的時間效率, -6- (3) (3)1221102 進行品質優異之加工的雷射加工方法及加工裝置。 【發明內容】 依據本發明之一觀點,保提供一種雷射加工方法,含 有:以具有貫通孔之遮罩整形射束剖面,俾使該遮罩的貫 通孔在加工對象物表面上成像地,由透鏡將通過該貫通孔 之雷射光束予以聚光並射入於該加工對象物表面上的工程 ,與錯雷射光束之射入位置在上述加工對象物表面上移動 ’令通過上述透鏡之雷射光束進行掃描同時,在雷射光束 掃描中亦使上述貫通孔在加工對象物表面上成像而加工該 加工對象物的工程。 由於使遮罩的貫通孔經常成像於加工對象物表面,而 掃描雷射光束,致能以局時間效率進行品質良好之加工。 且可防止雷射光束掃描起因之光暈所致的加工品質之降低 〇 又,依據本發明之其他觀點,乃提供一種雷射加工方 法,含有:將透鏡所聚光雷射光束予以射入於加工對象物 表面之工程;與使雷射光束射入位置移動於上述加工對象 物表面上而加工該加工對象物之工程,亦是避免該雷射光 束之自上述透鏡至上述加工對象物表面的光路徑長度發生 變化地實行該雷射光束掃描之工程。 由於將透鏡至加工對象物表面之加:工位置的光路徑長 度保持於一定,並予以雷射光束掃描,故能例如經常調焦 於加工對象物表面上,以高時間效率進行高品質之雷射加 (4)1221102 工。1221102 (1) 发明. Description of the invention [Technical field to which the invention belongs] The present invention relates to a laser processing method and a laser processing apparatus for processing a laser beam by irradiating a processing object. [Prior Art] FIG. 9 is a schematic view of a conventional laser processing device capable of forming a groove. For example, a pulsed laser beam with a frequency of 1 kHz is emitted from a laser light source 51. After the laser beam is homogenized by the pulse energy density (flat top) of the beam cross section by the homogenizer 5 2, the cross-sectional shape is shaped into a circle by a mask 5 3 having a circular through hole, for example. Further, it is reflected by the reflecting mirror 54 and passes through the condenser lens 55 to be incident on the substrate 56. The substrate 56 is a substrate in which an ITO film is formed on a glass base material, for example. The laser beam is incident on the I TO film of the substrate 56. The beam spot of the laser beam on the surface of the ITO film is a circle having a diameter of 0.2 mm, for example. The substrate 56 is mounted on the XY stage 57. By using the XY stage 5 7 to move the substrate 5 6 in a two-dimensional plane, the incident position of the pulsed laser beam can be moved within the upper surface of the substrate 56. First, moving the XY stage 57 causes the substrate 56 to be irradiated with a pulsed laser beam at a repetition rate of 50%, and a groove is formed in the ITO film of the substrate 56. Here, the repetition rate is the ratio of the distance traveled in the radius direction of the circle when the pulse laser beam is fired for each circle diameter. Fig. 10A is a schematic plan view of a substrate 56 formed by digging a continuous hole by irradiating a laser beam at a repetition rate of 50% and forming a groove in the ITO film. The thick (2) 1221102 line shows the opening of the groove. Holes that depend on the beam spot shape of the laser beam incident on the I τ〇 film are continuously excavated to form trenches. Therefore, the side edge of the opening along the longer direction of the groove has unevenness caused by the outer peripheral portion of the circular beam spot. In addition, when the frequency of the irradiated laser beam is [kΗ], the processing speed is 100 mrn / s when the beam spot of the laser beam on the ITO film of the substrate 50 is 0.2 mm in diameter. The main reason is that the speed of the XY stage 57 is used to control the speed, so that the uniformity of the processing shape is taken into consideration, and a faster processing speed cannot be adopted. In order to make the side edges of the trench openings formed by the ITO film close to a straight line, a method of increasing the repetition rate is used. For example, moving the X Y stage 5 7 causes a pulsed laser beam to be irradiated at a repetition rate of 90%, and a groove is formed on the I TO film of the substrate 56. Figure] 0B is a schematic plan view of a substrate 56 formed by forming a continuous hole in a pulsed laser beam irradiated with a 90% repetition rate and forming a groove in the ITO film. Similar to FIG. 10A, the openings of the grooves are shown with thick lines. Although the side edge of the opening along the longer direction of the groove is nearly linear. However, since the laser beam is irradiated at a repetition rate of 90%, the processing speed is 1/5 of the repetition rate of 50%, that is, 20 mm / s. That is, although the shape of the opening can be improved, the time efficiency of processing is deteriorated. FIG. 11 is a schematic cross-sectional view of the substrate 56 taken along line PQ of FIG. 10A. A groove is formed on the ITO film formed on the glass base material, and the side surface of the groove is inclined with respect to the surface of the substrate 56. However, it is better for the groove to have a more steep side shape. An object of the present invention is to provide a laser processing method and processing device capable of performing excellent quality processing at a high time efficiency of -6- (3) (3) 1221102. [Summary of the Invention] According to an aspect of the present invention, a laser processing method is provided, which includes: shaping a beam cross section with a mask having a through hole, so that the through hole of the mask is imaged on a surface of a processing object, The process of condensing the laser beam passing through the through hole by the lens and incident on the surface of the processing object, and moving the incident position of the wrong laser beam on the surface of the processing object, At the same time that the laser beam scans, the laser beam scanning also processes the through-holes to form an image on the surface of the object to be processed. Since the through holes of the mask are often imaged on the surface of the processing object, and the laser beam is scanned, good quality processing can be performed with local time efficiency. In addition, it can prevent the reduction of the processing quality caused by the halo caused by the scanning of the laser beam. According to another aspect of the present invention, a laser processing method is provided. The method includes the following steps. The process of the surface of the processing object; and the process of moving the laser beam incident position on the surface of the processing object to process the processing object, also avoiding the laser beam from the lens to the surface of the processing object The laser beam scanning process is performed while the optical path length is changed. Since the length of the optical path from the lens to the surface of the processing object is kept constant and the laser beam is scanned, it is possible to focus on the surface of the processing object often, for example, to perform high-quality lightning with high time efficiency. Shoot plus (4) 1221102 workers.

況且,依據本發明之其他觀點,係提供一種雷射加工 裝置,含有··可射出雷射光束之雷射光源;與保持加工對 象物之保持台;與具有可整形上述雷射光源所射出雷射光 束剖面之貫通孔的遮罩;與將被上述遮罩整形剖面之雷射 光束加以聚光藉該遮罩之貫通孔成像於上述保持台所保持 的加工對象物表面之聚光鏡;與接受外部之控制,促使上 述聚光鏡所聚光之雷射光束在上述加工對象物表面上至少 沿一維方向進行掃描之射束掃描器;與接受外部之控制, 促使上述遮罩及上述聚光鏡移動之移動機構;與促使上述 射束掃描器之掃描及上述移動機構所致的上述遮罩和上述 聚光鏡之移動同步進行的控制裝置。 使用此種雷射加工裝置時,藉同步於射束掃描促使遮 罩及聚光鏡變位,而能以高時間效率進行高品質之雷射加 工。Moreover, according to another aspect of the present invention, there is provided a laser processing device including a laser light source capable of emitting a laser beam; a holding table for holding an object to be processed; and a laser emitted from the laser light source capable of shaping the laser light source A mask for a through-hole of a beam profile; a condenser for condensing a laser beam that has been shaped by the above-mentioned mask through the mask's through-hole to form an image on the surface of a processing object held by the holding table; A beam scanner that controls the laser beam condensed by the condenser to scan at least one-dimensional direction on the surface of the processing object; and a movement mechanism that accepts external control to cause the mask and the condenser to move; A control device that synchronizes the scanning of the beam scanner and the movement of the mask and the condenser caused by the moving mechanism. When such a laser processing device is used, the mask and the condenser are displaced in synchronization with the beam scanning, so that high-quality laser processing can be performed with high time efficiency.

依據本發明之其他觀點,乃提供一種雷射加工方法, 含有:(e)將雷射光束以透鏡予以聚光,射入於加工對象 物表面之工程;與(f)當上述加工對象物之雷射光束射入 位置移動時,促使上述透鏡移動以抑制射入位置移動所起 因的上述加工對象物表面之雷射光束的脈衝能量密度或功 率密度之變動同時,將雷射光束射入位置在上述加工對象 物表面內予以移動之工程。 由於促使透鏡移動以均勻化照射於被加工面之雷射光 束的脈衝能量密度或功率密度,因此對於被加工面之廣泛 -8- (5)1221102 領域能予以保持所定的加工性。 依據本發明之其他觀點,係提供一種雷射加工方法, 含有:將雷射光束以透鏡予以聚光,射入於加工對象物表 面之工程;與當上述加工對象物之雷射光束射入位置移動 時’促使上述透鏡移動以抑制射入位置移動所起因的上述 加工對象物表面之光束點面積的變動同時,將雷射光束射 入位置在上述加工對象物表面內予以移動之工程。According to another aspect of the present invention, a laser processing method is provided, including: (e) a process of condensing a laser beam with a lens and incident on a surface of a processing object; and (f) when the processing object is When the laser beam incident position is moved, the lens is moved to suppress the pulse energy density or power density of the laser beam on the surface of the processing object caused by the movement of the incident position, and the laser beam incident position is at The process of moving the surface of the object. Since the lens is moved to uniformize the pulse energy density or power density of the laser beam irradiated on the surface to be processed, it is possible to maintain a predetermined processability in a wide range of the surface to be processed. According to another aspect of the present invention, a laser processing method is provided, which includes: a process of condensing a laser beam with a lens, and projecting the laser beam onto a surface of a processing object; and a position where the laser beam of the processing object is incident The process of 'moving the lens' while moving to suppress the change in the beam spot area on the surface of the processing object caused by the movement of the incident position and move the laser beam incident position within the surface of the processing object.

藉促使透鏡移動以均勻化照射於被加工面之雷射光束 的光束點面積,故能謀圖基板上之脈衝能量密度或功率密 度的均勻化,而對被加工面之廣泛領域能予以保持所定的 加工性。By moving the lens to uniformize the beam spot area of the laser beam irradiated on the surface to be processed, it is possible to uniformize the pulse energy density or power density on the substrate, while maintaining a wide range of areas to be processed. Workability.

依據本發明之其他觀點,乃提供一種雷射加工裝置, 含有:可射出雷射光束之雷射光源;與保持加工對象物之 保持機構;與可將上述雷射光源所射出雷射光束予以聚光 之透鏡;與可使上述透鏡所射出雷射光束之進行方向搖擺 ,令雷射光束射入於上述保持機構所保持的加工對象物表 面,而使雷射光束之射入位置在加工對象物表面內移動的 射束掃描器;與接受外部之控制信號,促使上述透鏡移動 之移動機構;與當上述射束掃描器促使雷射光束之射入位 置在加工對象物表面移動時,可控制上述移動機構俾使上 述透鏡位置移動,以抑制加工對象物表面之雷射光束的脈 衝能量密度或功率密度變化之控制裝置。 藉促使透鏡移動以均勻化照射於被加工面之雷射光束 的脈衝能量密度或功率密度,而對被加工面之廣泛領域能 -9- (6)1221102 予以保持所定的加工性。 依據本發明之其他觀點,係提供一種雷射加工 含有:可射出雷射光束之雷射光源;與保持加工對 保持機構;與可將上述雷射光源所射出雷射光束予 之透鏡;與可使上述透鏡所射出雷射光束之進行方 ,令雷射光束射入於上述保持機構所保持的加工對 面,而使雷射光束之射入位置在加工對象物表面內 射束掃描器;與接受外部之控制信號,促使上述透 之移動機構;與當上述射束掃描器促使雷射光束之 置在加工對象物表面移動時,可控制上述移動機構 述透鏡位置移動,以抑制加工對象物表面之光束點 動的控制裝置。 藉促使透鏡移動以均勻化照射於被加工面之雷 的光束點面積,致能謀圖基板上之脈衝能量密度或 度的均勻化,而對被加工面之廣泛領域能予以保持 加工性。 依據本發明之其他觀點,乃提供一種雷射加工 含有:(g)將雷射光束以透鏡予以聚光,射入於加 物表面之工程;與(h)當上述加工對象物之雷射光 位置移動時,利用可變減衰器調節雷射光束之功率 制射入位置移動所起因的上述加工對象物表面之雷 的脈衝能量密度或功率密度之變動同時,將雷射光 位置在上述加工對象物表面內予以移動之工程。 藉利用可變減衰器以均勻化照射於被加工面之 裝置, 象物之 以聚光 向搖擺 象物表 移動的 鏡移動 射入位 俾使上 面積變 射光束 功率密 所定的 方法, 工對象 束射入 ,以抑 射光束 束射入 雷射光 -10- (7)1221102 束的脈衝能量密度或功率密度,而對被加工面之廣泛領域 能予以保持所定的加工性。According to another aspect of the present invention, a laser processing device is provided, including: a laser light source capable of emitting a laser beam; and a holding mechanism for holding a processing object; and a laser beam capable of condensing the laser beam emitted by the laser light source. The lens of light; and the direction of the laser beam emitted by the lens can be swung, so that the laser beam is incident on the surface of the processing object held by the holding mechanism, and the incident position of the laser beam is on the processing object Beam scanner that moves inside the surface; and a moving mechanism that receives the external control signal to cause the lens to move; and that the beam scanner can control the above when the incident position of the laser beam is moved on the surface of the processing object The moving mechanism is a control device that moves the position of the lens to suppress the pulse energy density or power density of the laser beam on the surface of the processing object. By moving the lens to uniformize the pulse energy density or power density of the laser beam irradiated on the surface to be processed, it is possible to maintain a predetermined processability in a wide range of the surface to be processed -9- (6) 1221102. According to another aspect of the present invention, there is provided a laser processing including: a laser light source capable of emitting a laser beam; and a holding processing pair holding mechanism; and a lens capable of giving the laser beam emitted by the laser light source described above; and The laser beam emitted from the lens is processed, and the laser beam is incident on the opposite side of the processing held by the holding mechanism, so that the incident position of the laser beam is within the surface of the object to be processed; The control signal promotes the above-mentioned transparent movement mechanism; and when the beam scanner causes the laser beam to move on the surface of the processing object, the movement of the lens position of the above-mentioned movement mechanism can be controlled to suppress the light beam on the surface of the processing object Jog control. By urging the lens to move to uniformize the area of the beam spot of the light irradiated on the surface to be processed, it is possible to uniformize the pulse energy density or degree on the substrate, and maintain the processability in a wide area of the surface to be processed. According to another aspect of the present invention, there is provided a laser processing including: (g) a process of condensing a laser beam with a lens and incident on a surface of an additive; and (h) when the laser light position of the processing object is During the movement, the variable attenuation attenuator is used to adjust the power of the laser beam to adjust the incident position of the laser on the surface of the processing object caused by the movement of the pulse energy density or power density of the laser. Works to be moved within. By using a variable attenuator to uniformly irradiate the surface to be machined, the image of the object is moved to the swinging object surface by condensing the mirror, and the upper area is changed by setting the beam power density. The beam is incident to suppress the incident beam of laser beam into the laser light -10- (7) 1221102 The pulse energy density or power density of the beam, while maintaining a predetermined processability over a wide area of the machined surface.

依據本發明之其他觀點,係提供一種雷射加工裝置, 含有:可射出雷射光束之雷射光源;與保持加工對象物之 保持機構;與可將上述雷射光源所射出雷射光束予以聚光 之透鏡;與可使上述透鏡所射出雷射光束之進行方向搖擺 ’令雷射光束射入於上述保持機構所保持的加工對象物表 面’且使雷射光束之射入位置在加工對象物表面內移動的 射束掃描器;與接受外部之控制信號,以可變之減衰率衰 減雷射光束的功率之可變減衰器;與當上述可變減衰器促 使雷射光束之射入位置在加工對象物表面移動時,可控制 上述可變減衰器調節雷射光束的功率,以抑制加工對象物 表面之雷射光束的脈衝能量密度或功率密度變化之控制裝 置。According to another aspect of the present invention, a laser processing device is provided, comprising: a laser light source capable of emitting a laser beam; and a holding mechanism for holding a processing object; and a laser beam capable of condensing the laser beam emitted by the laser light source A lens of light; and the direction of the laser beam emitted by the lens can be oscillated in a direction that "the laser beam is incident on the surface of the processing object held by the holding mechanism" and the incident position of the laser beam is at the processing object A beam scanner moving inside the surface; and a variable attenuator that receives external control signals and attenuates the power of the laser beam with a variable attenuation rate; and when the variable attenuator causes the laser beam to enter the position A control device that can control the variable attenuator to adjust the power of the laser beam when the surface of the processing object moves, so as to suppress the pulse energy density or power density of the laser beam on the surface of the processing object.

藉利用可變減衰器將照射於被加工面之雷射光束的脈 衝能量密度或功率密度予以均勻化,而能將被加工面之廣 泛領域保持具有所定的加工性。 依據本發明之其他觀點,乃提供一種雷射加工裝置’ 含有:可射出雷射光束之雷射光源;與保持加工對象物之 保持機構;與可將上述雷射光源所射出雷射光束予以收歛 或擴散之第一透鏡;與可使通過上述第一透鏡之雷射光束 射入,將所射入雷射光束予以聚光的第二透鏡;與可使上 述第二透鏡所射出雷射光束之進行方向搖擺,令雷射光束 射入於上述保持機構所保持的加工對象物表面’且使雷射 -11 - (8) 1221102 光束之射入位置在加工對象物表面內移動的射束 與接受外部之控制信號,促使上述第一透鏡移動 構;與當上述射束掃描器促使雷射光束之射入位 對象物表面移動時,可控制上述移動機構俾使上 鏡位置移動,以抑制加工對象物表面之雷射光束 量密度或功率密度變化之控制裝置;而將對於射 二透鏡之雷射光束的該第二透鏡之數値口徑設爲 對於通過上述第二透鏡之雷射光束的該第二透鏡 徑設爲NA2時,NA1/NA2是2以上者。 藉移動第一透鏡將照射於被加工面之雷射光 能量密度或功率密度予以均勻化,而對被加工面 域能予以保持所定的加工性。且,藉縮短第一透 距離,可圖加工之高速化及高精度化。 依據本發明之其他觀點,係提供一種雷射加 含有:可射出雷射光束之雷射光源;與保持加工 保持機構;與具有上述雷射光源所射出雷射光束 通孔,且接受外部之控制信號,可改變通過貫通 光束的剖面一方向長度之射束剖面整形器;與可 束剖面整形器所射出雷射光束予以聚光之透鏡; 述透鏡所射出雷射光束之進行方向搖擺,令雷射 於上述保持機構所保持的加工對象物表面,且使 之射入位置在加工對象物表面內移動的射束掃描 上述射束掃描器促使雷射光束之射入位置在加工 面移動時,可控制上述射束剖面整形器,由該射 掃描器; 之移動機 置在加工 述第一透 的脈衝能 入上述第 N A 1、將 之數値口 束的脈衝 之廣泛領 鏡之移動 工裝置, 對象物之 射入之貫 孔之雷射 將上述射 與可使上 光束射入 雷射光束 器;與當 對象物表 束剖面整 -12- 1221102 Ο) 形器進行抑制加工對象物表面之光束點形狀變動的控 置c 由於當被加工位置移動時,將光束點形狀之變動 抑制,故對被加工面之廣泛領域能予以保持所定的加By using a variable attenuator to uniformize the pulse energy density or power density of the laser beam irradiated on the surface to be processed, it is possible to maintain predetermined processability in a wide area of the surface to be processed. According to another aspect of the present invention, a laser processing device is provided. The laser processing device includes: a laser light source capable of emitting a laser beam; and a holding mechanism for holding an object to be processed; and a laser beam capable of converging the laser beam emitted by the laser light source. Or a diffused first lens; and a second lens that allows the laser beam passing through the first lens to enter and condense the incident laser beam; and a second lens that allows the laser beam emitted by the second lens to be focused Sway the direction so that the laser beam is incident on the surface of the object to be held by the holding mechanism, and the laser -11-(8) 1221102 beam is moved into the surface of the object and the beam is received. An external control signal causes the first lens to move; and when the beam scanner causes the laser beam to move into the target surface, the moving mechanism can be controlled to move the position of the upper lens to suppress the processing object. Control device for changing the laser beam volume density or power density on the surface of an object; and the number of apertures of the second lens for the laser beam that shoots two lenses is set to The second lens through said second lens of the laser beam diameter and NA2 is, NA1 / NA2 is 2 or more. By moving the first lens, the energy density or power density of the laser light irradiated on the surface to be processed is uniformized, and a predetermined processability can be maintained in the surface to be processed. In addition, by shortening the first penetration distance, it is possible to increase the speed and accuracy of graphic processing. According to another aspect of the present invention, there is provided a laser plus: a laser light source capable of emitting a laser beam; and a holding and holding mechanism; and a laser beam through hole having the laser beam emitted by the laser light source, and receiving external control The signal can change the beam profile shaper that passes through the beam in one direction; the lens that condenses the laser beam emitted by the beam profile shaper; the direction of the laser beam emitted by the lens is swayed to make the laser When the beam that is incident on the surface of the processing object held by the holding mechanism and whose incident position is moved within the surface of the processing object is scanned, the beam scanner may cause the incident position of the laser beam to move on the processing surface. The beam profiler that controls the beam profiler is provided by the beam scanner; the mobile machine is set on a mobile working device for processing a wide range of scopes of pulses that can enter the first NA, pulses of several beams, The laser beam of the penetrating hole of the object will make the above beam into the laser beam device; and the beam profile of the object will be adjusted -12- 1221102 〇) The shaper controls the shape change of the beam spot on the surface of the object to be processed. C As the shape of the beam spot is suppressed when the processed position is moved, a wide range of areas to be processed can be maintained.

C 依據本發明之其他觀點,乃提供一種雷射加工裝 含有:可射出雷射光束之雷射光源;與保持加工對象 保持機構;與可將上述雷射光源所射出雷射光束予以 之透鏡;與可使上述透鏡所射出雷射光束之進行方向 ,令雷射光束射入於上述保持機構所保持的加工對象 面’且使雷射光束之射入位置在加工對象物表面內移 射束掃描器;與具有貫通孔,被配置於自上述射束掃 所射·出雷射光束射入於加工對象物爲止之光路徑中途 {吏@過該貫通孔之雷射光束射入於加工對象物的近接 〇 _使用可搖擺雷射光束之進行方向的射束掃描器 @ 0利用近接遮罩之雷射加工,而能高速地實行高精 加工。 依_本發明之其他觀點,係提供一種雷射加工方 t胃:調整雷射光源所射出雷射光束之擴散角的工程 ¥ G於加工對象物表面被配置於自該表面僅離間所定 2 tt,且將被調整爲具上述所定擴散角之雷射光束 G力向予以搖擺同時,將該雷射光束照射於具有貫通 f ί妾遮罩,令通過該貫通孔之雷射光束射入於該加工 制裝 予以 工性 置, 物之 聚光 搖擺 物表 動的 描器 ,而 遮罩 ,以 度之 法, ;與 距離 的進 孔之 對象 -13- (10) 1221102 物表面,而將該貫通孔之形狀轉印於該加工對象物表面的 工程;與將上述所定擴散角及上述所定距離之至少一方, 依據該貫通孔之形狀被轉印於該加工對象物表面的精度、 及雷射光束之擴散角、以及關於上述近接遮罩和上述加工 對象物表面間之距離所預先求取的關係加以設定之工程。C. According to another aspect of the present invention, a laser processing device includes: a laser light source capable of emitting a laser beam; and a holding mechanism for holding a processing object; and a lens capable of providing the laser beam emitted by the laser light source; With the direction of the laser beam emitted by the lens, the laser beam can be incident on the surface of the processing object held by the holding mechanism, and the incident position of the laser beam can be shifted within the surface of the object to be scanned. And a device having a through-hole arranged in the light path midway through the laser beam emitted from the above-mentioned beam scan and exiting the laser beam to the object to be processed Proximity of __ Beam Scanner @ 0 that uses the direction of the swingable laser beam to achieve high-speed high-speed machining by laser processing of proximity masks. According to another aspect of the present invention, there is provided a laser processing square stomach: a process for adjusting a diffusion angle of a laser beam emitted by a laser light source ¥ G is disposed on a surface of a processing object at a distance of only 2 tt from the surface And sway the laser beam G which is adjusted to have the predetermined diffusion angle, and irradiate the laser beam with a through f 妾 shield, so that the laser beam passing through the through hole is incident on the The processing equipment shall be set on a working basis, and the condensing object of the object shall be moved by a tracing device, and the mask shall be measured in degrees, and the object of the distance into the hole shall be -13- (10) 1221102. The process of transferring the shape of the through-hole to the surface of the processing object; and the accuracy of transferring the at least one of the predetermined diffusion angle and the predetermined distance to the surface of the processing object according to the shape of the through-hole, and laser A process of setting a diffusion angle of a light beam and a relationship obtained in advance regarding a distance between the proximity mask and the surface of the object to be processed.

藉使用可搖擺雷射光束之進行方向的射束掃描器,以 進行利用近接遮罩之雷射加工,而能高速地實行高精度之 加工。且,依據預先求取之非滿足轉印精度及雷射光束之 擄散角以及近接間隙不可的數値關係,以所盼轉印精度進 行加工時,能簡便地選定近接間隙及擴散角。By using a beam scanner that can swing the laser beam in its direction, laser processing using a proximity mask can be performed, and high-precision processing can be performed at high speed. In addition, based on the previously determined non-satisfactory relationship between the transfer accuracy and the divergence angle of the laser beam and the close gap, the close gap and spread angle can be easily selected when processing with the desired transfer accuracy.

依據本發明之其他觀點,乃提供一種雷射加工裝置, 含有:可射出連續波雷射光束之雷射光源;與保持加工對 象物之保持機構;與被射入上述雷射光源所射出雷射光束 ’且依據外部所付予契機信號,可將所射入雷射光束切換 爲予以射出或不予射出某進行方向之光學系統;與具有矩 形貫通孔’使自上述光學系統以某進行方向射出之雷射光 束射入於該貫通孔,以整形雷射光束剖面之遮罩;與將上 述遮罩射出之雷射光束予以聚光,使上述遮罩之矩形貫通 孔在上述保持機構所保持加工對象物表面成像的透鏡;與 依據外部所付予控制信號將上述保持機構予以移動,可使 上述透鏡所射出雷射光束之射入於加工對象物的位置在加 工對象物表面內移動之移動機構;與依據外部所付予控制 信號’令上述遮罩旋轉於和通過該遮罩之貫通孔的雷射光 束光軸呈平行之軸周圍的遮罩旋轉機構;與控制上述光學 -14- (11)1221102 系統,促使上述光學系統以所定時序將雷射光束射出於某 進行方向,及控制上述移動機構,促使上述移動機構將雷 射光束之對加工對象物的射入位置移動於第一方向,以及 控制上述遮罩旋轉機構,促使上述遮罩旋轉機構在上述移 動機構將加工對象物表面上之雷射光束射入位置移動於該 第一方向前,令上述遮罩旋轉俾使上述矩形貫通孔之在加 工對象物表面的像某一邊平行於該第一方向之控制裝置。According to another aspect of the present invention, a laser processing device is provided, comprising: a laser light source capable of emitting a continuous wave laser beam; and a holding mechanism for holding an object to be processed; and a laser emitted by being injected into the above-mentioned laser light source Beams 'and according to the opportunity signal provided by the outside, the incoming laser beams can be switched to an optical system that is emitted or not emitted in a certain direction; and with a rectangular through hole', the optical system is emitted from the above-mentioned optical system in a certain direction The laser beam is incident on the through hole to shape the mask of the laser beam profile; and the laser beam emitted from the mask is condensed so that the rectangular through hole of the mask is held and processed by the holding mechanism. A lens for imaging the surface of the object; and a moving mechanism for moving the above-mentioned holding mechanism in accordance with a control signal given from outside to move the position of the laser beam emitted by the lens into the object to be processed within the surface of the object ; In accordance with the control signal given from outside, the above-mentioned mask is rotated to be parallel to the optical axis of the laser beam passing through the through hole of the mask. A mask rotation mechanism around the axis; and controlling the above-mentioned optical-14- (11) 1221102 system to cause the above-mentioned optical system to shoot the laser beam in a certain direction at a predetermined timing, and to control the above-mentioned moving mechanism to cause the above-mentioned moving mechanism to The incident position of the laser beam on the object to be processed is moved in the first direction, and the mask rotation mechanism is controlled to cause the mask rotation mechanism to move the incident position of the laser beam on the surface of the object to be processed by the moving mechanism. Before the first direction, the control device rotates the mask so that a certain side of the image of the rectangular through hole on the surface of the object to be processed is parallel to the first direction.

在加工對象物表面,能照射連續波雷射光束以形成線 狀圖形(線)同時,亦能自連續波雷射光束切出脈衝雷射光 束予以照射,而容易地形成點狀之離散性圖形(點)。且藉 促使雷射光束照射位置在加工對象物表面沿雷射光束之矩 形光束點的某邊平行移動,而能將線、點之外形均形成爲 矩形。On the surface of the processing object, a continuous wave laser beam can be irradiated to form a linear pattern (line). At the same time, a pulse laser beam can be cut out from the continuous wave laser beam and irradiated, thereby easily forming a point-like discrete pattern. (point). And by urging the laser beam irradiation position on the surface of the processing object to move in parallel along one side of the rectangular beam spot of the laser beam, the shape of the line and the point can be formed into a rectangle.

依據本發明之其他觀點,係提供一種雷射加工方法, 含有:(i)將雷射光源所射出連續波雷射光束射入於可將 所射入雷射光束切換爲自某進行方向予以射出或不予射出 之光學系統的工程;與(j )將自上述光學系統向某進行方 向射出之雷射光束射入於具矩形貫通孔的遮罩加以整形, 並以透鏡聚光’而使上述貫通孔之像在加工對象物表面成 像的工程;與(k)令上述貫通孔之像在上述加工對象物表 面上沿該像某一邊之平行方向移動的工程;而欲在加工對 象物表面形成點狀之離散性圖形時,即在上述工程(i ),自 ± ®光學系統向某進行方向間歇性地射出雷射光束,欲在 加工對象物表面形成線狀圖形時,即在上述工程(i ),自上 -15- (12)1221102 述光學系統向某進行方向連續性地射出雷射光束。 在加工對象物表面,能照射連續波雷射光束以形成線 狀圖形(線)同時,亦能自連續波雷射光束切出脈衝雷射光 束予以照射,而容易地形成點狀之離散性圖形(點)i且藉 促使雷射光束照射位置在加工對象物表面沿雷射光束之矩 形光束點的某邊平行移動,而能將線、點之外形均形成爲 矩形。 \According to another aspect of the present invention, a laser processing method is provided, including: (i) a continuous wave laser beam emitted from a laser light source is injected into the laser beam, and the incident laser beam can be switched to be emitted from a certain direction; Or the project of an optical system that is not allowed to emit; and (j) shaping the laser beam emitted from the optical system in a certain direction into a mask with a rectangular through-hole, and shaping it with a lens to condense the above The process of forming the image of the through hole on the surface of the processing object; and (k) the process of moving the image of the through hole on the surface of the processing object in a direction parallel to one side of the image; and to form the surface of the processing object For point-like discrete patterns, that is, in the above-mentioned process (i), laser beams are intermittently emitted from the ± ® optical system in a certain direction, and when a linear pattern is to be formed on the surface of the processing object, the above-mentioned process ( i), from above -15- (12) 1221102, the optical system continuously emits laser beams in a certain direction. On the surface of the processing object, a continuous wave laser beam can be irradiated to form a linear pattern (line). At the same time, a pulse laser beam can be cut out from the continuous wave laser beam and irradiated, thereby easily forming a point-like discrete pattern. (Point) i and by causing the laser beam irradiation position to move parallel to one side of the rectangular beam spot of the laser beam on the surface of the processing object, the shape of the line and the point can be formed into a rectangle. \

依據本發明之其他觀點,乃提供一種雷射加工裝置, 含有:可保持加工對象物之保持機構;與可射出脈衝雷射 光束之第一雷射光源;與可射出連續波雷射光束之第二雷 射光源;與將上述第一雷射光源射出之脈衝雷射光束及上 述第二雷射光源射出之連續波雷射光束,以連續波雷射光 淨、之光束點內部包含脈衝雷射光束之光束點地予以照射於 上述保持機構所保持加工對象物表面的光學系統;與促使 脈衝雷射光束及連續波雷射光束之光束點在上述保持機構 所保持加工對象物表面上移動的移動機構。 對加工對象物表面上之某被加工領域,先照射連續波 沿射光束付予預熱後,再進行照射脈衝雷射光束之加工。 方令是:’能容易地選擇性加工該被加工領域之表層。 依據本發明之其他觀點,係提供一種雷射加工方法, 含有:(η)自第一雷射光源射出脈衝雷射光束,及自第二 雷射光源射出連續波雷射光束之工程;與(〇)對基底層及 基底層表面上所形成具有以比基底層材質更不易照射雷射 加工之材質予以形成的表層之加工對象物表面所劃定被加 -16- (13)1221102 工點,經照射自上述第二雷射光源射出之連續波 付予預熱後,再對該被加工點照射自上述第一雷 出之脈衝雷射光束,而在上述加工對象物表層形 工程。 藉對於加工對象物表面上之某被加工領域, 續波雷射光束付予預熱後,再進行照射脈衝雷射 工。於是,能容易地選擇性加工該被加工領域之 【實施方式】 圖1爲可實行本發明第一實施例之雷射加工 射加工裝置槪略圖。 自雷射光源1、例如含有波長變換單元之 雷射振盪器,以脈衝能量lmj / pulse、脈衝寬度 出Nd : YAG雷射之三倍高次諧波(波長3 5 5 nm: 束乃經過調節脈衝能量之可調式衰減器2、可擴 徑且以平行光射出之擴張器3,射入於圓錐光學 圓錐光學系統4含有一對圓錐(形)透鏡4a.4b所 對圓錐(形)透鏡4 a,4 b則例如以相同型,被配置 呈對向。雷射光束即以射束剖面中心重疊於直立 頂點,自直立圓錐之軸向射入於圓錐透鏡4 a而 鏡4 b射出。圓錐光學系統4係將所射入雷射光 輪廓變換爲在射束剖面中央部強度較弱,在周邊 對此容後詳述。又,圓錐光學系統4亦可替代雷 出側之圓錐透鏡4b,而使用凸透鏡。 雷射光束 射光源射 成孔穴之 先照射連 光束之加 表層。 方法的雷 Nd : Y AG 5 0 n s 射 >。雷射光 大射束直 系統4。 構成。一 互相底面 圓錐部分 自圓錐透 束之射束 部較強。 射光束射 -17- (14) (14)1221102 自圓錐光學系統4射出之雷射光束乃通過具有例如矩 形貫通孔之遮罩5、可使遮罩5之矩形貫通孔成像於基板 1 2上之物鏡6。遮罩5及物鏡6則分別藉音圈機構9‘及 1 〇 (亦能置換爲壓電驅動等之驅動機構)可移動於與雷射光 束進行方向呈平行之方向。音圈機構9及1 0所致之移動 係藉控制器1 1所發送之信號而進行。又,基板1 2是被安 置於保持台8上。 由物鏡6聚光之雷射光束即射入於電磁掃描器7。電 磁掃描器7乃含有X方向用掃描器7a及Y方向用掃描器 7b所構成,能以高速將雷射光束掃描於二維方向。X方 向用掃描器7a、Y方向用掃描器7b均含有可搖動反射鏡 被予以構成。當在保持台8所保持基板1 2上劃定互相正 交之X方向及Y方向時,X方向用掃描器7a、Y方向用 掃描器7b則促使雷射光束進行掃描,令經物鏡6聚光之 雷射光束射入點在基板1 2表面上分別沿X方向、Y方向 移動。電磁掃描器7可組合X方向用掃描器7 a、Y方向用 掃描器7 b,使雷射光束掃描於二維方向。 加工對象物之基板1 2係爲例如在玻璃基底材料上形 成I TO膜之基板,雷射光束即以加工能量約1 J / cm2射 入於基板12之ITO膜。 圖2爲經遮罩5、物鏡6、電磁掃描器7而掃描基板 1 2上之雷射光束光路徑槪略顯示圖。 當雷射光束射入於基板1 2上之射入位置Μ時,Μ乃 成像有遮罩5之貫通孔。又,自遮罩5至物鏡6之光路徑 2C -18- (15) (15)1221102 長度設爲a、自物鏡6至基板1 2上之射入位置的光路徑長 度設爲b、將物鏡6之焦距設爲f時,欲使遮罩之貫通孔 成像於基板1 2上,就非滿足關係式 (l/a)+(l/b)=l/f · · .(1) 不可。 由於電磁掃描器7之動作,雷射光束之射入位置則自 基板1 2上之射入位置Μ變爲N。於是對於射入位置Μ之 射入角與對於射入位置Ν之射入角互爲相異,假如遮罩5 及物鏡6原樣固定時,物鏡6至射入位置Μ之光路徑長 度與物鏡6至射入位置Ν之光路徑長度互爲相異(將該等 之差設爲△ b),是故遮罩5之貫通孔不成像於Ν。 在圖1所示雷射加工裝置,控制器1 1係同步於電磁 掃描器7之動作,將促使遮罩5、物鏡6移動之信號分別 發送至音圈機構9 · 1 0。該信號是將例如自遮罩5至物鏡6 之光路徑長度a、自物鏡6至基板1 2上之射入位置的光路 徑長度b均保持爲一定,而促使遮罩5及物鏡6移動之信 號。音圈機構9,1 0乃接受控制器1 1之信號,分別使遮罩 5及物鏡6移動於與雷射光束進行方向呈平行之方向。 如圖2所示,射入位置自Μ變化爲N時,遮罩5及 物鏡6被音圈機構9及1 0予以移動之距離爲△ b。遮罩5 及物鏡6即沿相同方向僅變位相同距離△ b。藉此,可滿 足上述(1)式,而在射入位置N成像遮罩5之貫通孔。 -19- (16) (16)1221102 因此,不僅射入位置M與N之兩點’只要在雷射光 束掃描中,經常將例如自遮罩5至物鏡6之光路徑長度a 與自物鏡6至基板1 2上之射入位置的光路徑長度b保持 爲一定,就能經常在基板1 2表面上成像遮罩5之賃通孔 。遮罩5及物鏡6則同步於電掃描器7所致之雷射光束 掃描,將光路徑長度a與光路徑長度b經常保持於一定地 被予以移動。此時,遮罩5之貫通孔的成像倍率(縮小率) 即經常呈一定。 例如,物鏡6之焦距f爲8 3 3 mm ’將遮罩5至物鏡6 之光路徑長度a保持於5 0 0 0 m m的所定値、將物鏡6至基 板12上之射入位置的光路徑長度b保持於1 00 0mm之所 定値時,遮罩5之貫通孔的成像倍率(縮小率)即爲1 / 5。 圖3A爲可在表面上成像遮罩5之矩形狀貫通孔地被 照射一射擊脈衝雷射光束,而在成像位置形成孔穴之基板 1 2槪略平面圖。基板1 2上係形成有被成像貫通孔之矩形 狀光束點,且在其位置之ITO膜開鑿孔穴。 圖3 B爲使遮罩5之矩形狀貫通孔以所定之成像倍率 成像同時,將射束之射入位置予以移動’藉照射四射擊脈 衝雷射光束,而在照射位置形成溝槽之基板1 2平面圖。 由於電磁掃描器7,俾使脈衝雷射光束沿成像爲矩形狀之 光束點長邊方向進行掃描。又,以50%之重複率照射射束 ,促使各射擊所開鑿孔穴連續,而形成溝槽。 藉形成所定大小之矩形狀光束點,促使雷射光束沿與 一對平行側邊(在圖3B爲長邊)呈平行之方向進行掃描, -20- 1 (17)1221102 乃能形成所定寬度之溝槽。如本實施例,利用脈衝雷射光 束時,即使光束點之一對平行側邊(在圖3 B爲長邊)一部 分重疊於上次射擊之光束點的一對平行側邊一部分’而令 雷射光束進行掃描i由於溝槽之開口側緣係以矩形狀光束 點之直線部予以形成,是故呈無凹凸之直線狀° 從控制上之容易性的觀點等說之,將基板1 2上之光 束點形成爲光束點之一對平行側邊與X方向或Y方向呈 平行較宜。According to another aspect of the present invention, a laser processing device is provided, comprising: a holding mechanism capable of holding a processing object; and a first laser light source capable of emitting a pulsed laser beam; and a first laser source capable of emitting a continuous wave laser beam. Two laser light sources; and the pulsed laser beam emitted by the first laser light source and the continuous wave laser beam emitted by the second laser light source, the continuous laser light beam includes a pulse laser beam inside the beam point An optical system for irradiating the surface of a processing object held by the holding mechanism with a light beam spot; and a moving mechanism for moving the beam spots of a pulse laser beam and a continuous wave laser beam on the surface of the processing object held by the holding mechanism . For a certain area to be processed on the surface of the object to be processed, the continuous wave beam is pre-heated first, and then the pulse laser beam is processed. The order is: ’The surface layer of the processed area can be easily and selectively processed. According to another aspect of the present invention, a laser processing method is provided, including: (η) a project of emitting a pulsed laser beam from a first laser light source and a continuous wave laser beam from a second laser light source; and ( 〇) Adding the -16- (13) 1221102 work point to the surface of the base layer and the surface of the base layer on the surface of the base layer, which are formed on the surface of the base layer and have a surface layer formed of a material that is less susceptible to laser processing than the base layer material. After the continuous wave emitted from the second laser light source is irradiated and preheated, a pulsed laser beam emitted from the first laser is irradiated to the processed point, and the surface processing of the object is performed. For a certain processing area on the surface of the processing object, the continuous-wave laser beam is pre-heated, and then the pulse laser is irradiated. Therefore, it is possible to easily and selectively process the processed field. [Embodiment] Fig. 1 is a schematic view of a laser processing apparatus capable of performing a first embodiment of the present invention. Self-laser light source 1. For example, a laser oscillator with a wavelength conversion unit, with a pulse energy lmj / pulse and a pulse width of three times higher harmonics of Nd: YAG laser (wavelength 3 5 5 nm: beam is adjusted Adjustable attenuator for pulse energy 2. Expander 3 with expandable diameter and outgoing in parallel light, incident on conical optical cone optical system 4 contains a pair of cone (shaped) lenses 4a. 4b a, 4 b are, for example, of the same type and are arranged to face each other. The laser beam is superimposed on the vertical vertex with the center of the beam profile, and enters the conical lens 4 a and the mirror 4 b from the axis of the upright cone. The cone The optical system 4 converts the profile of the incident laser light into a weak intensity at the center of the beam profile, which will be described in detail at the periphery. In addition, the conical optical system 4 can also replace the cone lens 4b on the laser exit side, and A convex lens is used. The laser beam is irradiated into the cavity before the light beam is added to the surface. The method of Nd: Y AG 5 0 ns radiation>. Laser beam large beam straight system 4. Composition. A conical part on the bottom surface of each other Beam transmitted from cone The laser beam emitted from the cone optical system 4 passes through the mask 5 having, for example, a rectangular through hole, and the rectangular through hole of the mask 5 can be imaged on the substrate 1 The objective lens 6 on 2. The cover 5 and the objective lens 6 can be moved in a direction parallel to the laser beam traveling direction by the voice coil mechanism 9 'and 10 (also can be replaced with a driving mechanism such as a piezoelectric drive). The movements caused by the voice coil mechanisms 9 and 10 are performed by the signals sent by the controller 11 and the substrate 12 is placed on the holding table 8. The laser beam focused by the objective lens 6 is incident. In the electromagnetic scanner 7. The electromagnetic scanner 7 is composed of an X-direction scanner 7a and a Y-direction scanner 7b, and can scan a laser beam in a two-dimensional direction at high speed. The X-direction scanners 7a and Y directions The scanner 7b includes a swingable mirror. When the X and Y directions orthogonal to each other are defined on the substrate 12 held by the holding table 8, the scanner 7a for the X direction and the scanner for the Y direction are defined. 7b causes the laser beam to be scanned, so that the incident point of the laser beam collected by the objective lens 6 is at The plates 12 and 2 respectively move in the X direction and the Y direction. The electromagnetic scanner 7 can be combined with the X direction scanner 7 a and the Y direction scanner 7 b to scan the laser beam in a two-dimensional direction. The substrate 12 is, for example, a substrate formed with an I TO film on a glass base material, and a laser beam is incident on the ITO film of the substrate 12 with a processing energy of about 1 J / cm2. Figure 2 is a mask 5, an objective lens 6, The electromagnetic scanner 7 scans the laser beam light path on the substrate 12 and shows a schematic view. When the laser beam is incident on the incident position M on the substrate 12, M is a through hole with a mask 5 imaged. In addition, the length of the light path 2C from the mask 5 to the objective lens 6 -18- (15) (15) 1221102 is set to a, the length of the light path from the objective lens 6 to the incident position on the substrate 12 is set to b, and the objective lens When the focal length of 6 is set to f, if the through holes of the mask are to be imaged on the substrate 12, the relational expression (l / a) + (l / b) = l / f ·· (1) is not allowed. Due to the operation of the electromagnetic scanner 7, the incident position of the laser beam becomes N from the incident position M on the substrate 12. Therefore, the angle of incidence for the injection position M and the angle of incidence for the injection position N are different from each other. If the mask 5 and the objective lens 6 are fixed as they are, the length of the light path from the objective lens 6 to the injection position M and the objective lens 6 The lengths of the light paths to the incident position N are different from each other (the difference is set to Δb), so that the through holes of the mask 5 are not imaged on N. In the laser processing apparatus shown in FIG. 1, the controller 11 is synchronized with the operation of the electromagnetic scanner 7, and sends signals for causing the mask 5 and the objective lens 6 to move to the voice coil mechanism 9 · 10, respectively. This signal keeps, for example, the light path length a from the mask 5 to the objective lens 6 and the light path length b from the objective lens 6 to the incident position on the substrate 12 to be constant, and causes the mask 5 and the objective lens 6 to move. signal. The voice coil mechanism 9, 10 receives signals from the controller 11 to move the mask 5 and the objective lens 6 in directions parallel to the laser beam traveling direction, respectively. As shown in FIG. 2, when the incident position changes from M to N, the distance that the mask 5 and the objective lens 6 are moved by the voice coil mechanisms 9 and 10 is Δb. The mask 5 and the objective lens 6 are only displaced by the same distance Δb in the same direction. Thereby, the through-hole of the mask 5 can be imaged at the injection position N while satisfying the above formula (1). -19- (16) (16) 1221102 Therefore, not only the two positions of the incident positions M and N ', as long as the laser beam is scanned, for example, the light path length a from the mask 5 to the objective lens 6 and the objective lens 6 are often The light path length b to the incident position on the substrate 12 is kept constant, so that the through holes of the mask 5 can always be imaged on the surface of the substrate 12. The mask 5 and the objective lens 6 are scanned synchronously with the laser beam caused by the electric scanner 7, and the optical path length a and the optical path length b are always kept constant and moved. At this time, the imaging magnification (reduction rate) of the through holes of the mask 5 is always constant. For example, the focal length f of the objective lens 6 is 8 3 3 mm 'to keep the light path length a of the mask 5 to the objective lens 6 at a predetermined value of 5000 mm, and the optical path of the objective lens 6 to the incident position on the substrate 12 When the length b is maintained at a predetermined value of 1000 mm, the imaging magnification (reduction rate) of the through hole of the mask 5 is ½. FIG. 3A is a schematic plan view of a substrate 12 that can be irradiated with a shooting pulse laser beam on a rectangular through-hole of the imaging mask 5 on the surface to form a hole at the imaging position. A rectangular beam spot with imaged through holes is formed on the substrate 12, and holes are cut in the ITO film at the positions. FIG. 3B is the substrate 1 in which the rectangular through-hole of the mask 5 is imaged at a predetermined imaging magnification while the incident position of the beam is moved 'by irradiating a four-shot pulse laser beam to form a groove at the irradiation position 2 floor plan. Due to the electromagnetic scanner 7, the pulsed laser beam is scanned along the long side of the beam spot imaged into a rectangular shape. In addition, the beam is irradiated at a repetition rate of 50%, so that the holes opened by each firing are continued to form grooves. By forming a rectangular beam spot of a predetermined size, the laser beam can be scanned in a direction parallel to a pair of parallel sides (long sides in FIG. 3B). -20- 1 (17) 1221102 can form a beam of a predetermined width. Trench. As in this embodiment, when using a pulsed laser beam, even if one of the pair of parallel side edges (long side in FIG. 3B) of the beam spot overlaps a part of the pair of parallel side edges of the beam point of the previous shot, The beam is scanned i. Since the opening side edge of the groove is formed as a straight portion of a rectangular beam spot, it has a straight line without unevenness. From the viewpoint of ease of control, etc., The beam spot is preferably formed such that a pair of parallel side edges of the beam spot are parallel to the X direction or the Y direction.

又,欲成像於基板1 2上之遮罩5的貫通孔’並非矩 形亦可。將光束點形成爲具有一對平行側邊之形狀’且使 雷射光束沿與該一對平行側邊呈平行之方向進行掃描,就 能加工開口側緣無凹凸之所定寬度的溝槽。The through hole 'of the mask 5 to be imaged on the substrate 12 may not be rectangular. By forming the beam spot into a shape having a pair of parallel sides, and scanning the laser beam in a direction parallel to the pair of parallel sides, a groove having a predetermined width without unevenness on the side edge of the opening can be processed.

圖4A爲遮罩5之貫通孔的一例示圖。遮罩5之貫通 孔被形成爲具有一對平行側邊之形狀。將該一對側邊互相 連接之其他一對側邊則向內側彎曲。使用具有如此貫通孔 之遮罩,而整形雷射光束剖面時,即能在基板〗2上形成 具有一對平行側邊形狀之光束點。 圖4B爲圖4A所示貫通孔成像於基板12上時,在基 板1 2上開鑿之孔穴槪略顯示圖。藉沿平行於一對平行側 邊之方向連續形成與該孔穴同樣形狀的孔穴,乃能加工開 U側緣無凹凸之所定寬度的溝槽。且,由於射入溝槽側緣 近旁之雷射光束累積能量密度比射入溝槽中央之雷射光束 累積能量密度較大,因此能促使溝槽側面更接近於垂直。 又,欲雷射加工如圖3 B所示僅延伸單一方向之溝槽 -21 - (18)1221102 時’亦可使用具有一搖動反射鏡之一維電磁掃描器或多角 掃描器。此時’只要使掃描器之掃描方向一致於光束點之 一對平行側邊的方向就可。 茲參照圖5 A〜5 C,就圓錐光學系統4加以說明。如 上述’圓錐光學系統4能將所射入雷射光束之射束輪廓變 換爲在射束剖面中央部較弱在周邊部較強。FIG. 4A is an example of a through hole of the mask 5. The through hole of the mask 5 is formed in a shape having a pair of parallel sides. The other pair of side edges connecting the pair of side edges to each other are bent inward. When a mask having such a through hole is used and the laser beam profile is shaped, a beam spot having a pair of parallel side shapes can be formed on the substrate 2. Fig. 4B is a schematic view of a hole burred in the base plate 12 when the through hole shown in Fig. 4A is imaged on the base plate 12. By continuously forming a hole having the same shape as the hole in a direction parallel to a pair of parallel sides, a groove having a predetermined width without unevenness on the U-side edge can be processed. In addition, since the cumulative energy density of the laser beam incident near the side edge of the trench is greater than the cumulative energy density of the laser beam entering the center of the trench, the side of the trench can be made closer to vertical. In addition, when laser processing is required to extend a groove extending in a single direction as shown in FIG. 3B, a one-dimensional electromagnetic scanner or a polygonal scanner with a shaking mirror can also be used. At this time, it is sufficient to make the scanning direction of the scanner coincide with the direction of a pair of parallel sides of the beam spot. 5A to 5C, the conical optical system 4 will be described. As described above, the 'cone optical system 4 can change the beam profile of the incident laser beam to be weaker at the center of the beam cross section and stronger at the periphery.

圖5 A爲顯示雷射光源1所射出脈衝雷射光束剖面之 每一脈衝能量密度的槪略曲線圖。一般,脈衝雷射光束是 脈衝能量密度在剖面中央部分較高,愈向周邊脈衝能量密 度愈低。圓錐光學系統4則藉兩個圓錐透鏡4 a, 4 b將所射 入雷射光束之中央部與周邊部予以反轉再射出之。因此, 自圓錐光學系統4射出之雷射光束的射束輪廓具有在射束 剖面中央部較弱在周邊部較強之分佈。FIG. 5A is a schematic diagram showing the energy density of each pulse of the pulse laser beam profile emitted by the laser light source 1. FIG. Generally, the pulsed laser beam has a higher pulse energy density in the center of the profile, and a lower pulse energy density toward the periphery. The conical optical system 4 uses two conical lenses 4 a and 4 b to invert the central portion and the peripheral portion of the incident laser beam and emits it. Therefore, the beam profile of the laser beam emitted from the conical optical system 4 has a distribution that is weaker at the center of the beam profile and stronger at the periphery.

圖5 B爲自圓錐光學系統4射出經過遮罩5整形後的 脈衝雷射光束剖面之每一脈衝能量密度的槪略顯示曲線圖 。射束具有在中央部較弱在周邊部較強之脈衝能量密度分 佈。 圖5C爲沿圖3B之C5 - C5線切割之基板12槪略剖 面圖。具有圖5 B所示射束輪廓之雷射光束,藉在物鏡6 予以聚光並射入於基板1 2,而在基板]2之I TO膜能使側 面之傾斜角接近於9 0 ° 。因此,圖3 B所示溝槽是開口側 緣被形成爲直線狀加上具有峭立側壁之溝槽。 又,與電磁掃描器7之動作同步,亦可將脈衝雷射光 束之脈衝能量予以調節,以進行品質更優良之加工。射入 -22- (19)1221102 於基板1 2之雷射光束的射入角變大時,射入位置之光束 點面積即變大。因此,將電磁掃描器7所掃描之雷射光束 的脈衝能量固定於所定値時,隨著射入角變大,射入位置 之雷射光束的脈衝能量密度愈變小,加工性會產生變化。 於是’爲保持所定之加工性,有時需要將射入位置之雷射 光束的脈衝能量密度保持於一定。FIG. 5B is a schematic diagram showing the energy density of each pulse of the pulse laser beam profile emitted from the conical optical system 4 and shaped by the mask 5. The beam has a pulse energy density distribution that is weaker at the center and stronger at the periphery. Fig. 5C is a schematic sectional view of the substrate 12a cut along the line C5-C5 in Fig. 3B. The laser beam having the beam profile shown in FIG. 5B is focused by the objective lens 6 and incident on the substrate 12, and the ITO film on the substrate] 2 can make the inclination angle of the side surface close to 90 °. Therefore, the groove shown in FIG. 3B is a groove in which the opening side edge is formed in a straight line with a steep side wall. In addition, in synchronism with the operation of the electromagnetic scanner 7, the pulse energy of the pulsed laser beam can be adjusted to perform more excellent processing. Incident -22- (19) 1221102 When the incident angle of the laser beam on the substrate 12 becomes larger, the spot area of the incident beam becomes larger. Therefore, when the pulse energy of the laser beam scanned by the electromagnetic scanner 7 is fixed to a predetermined value, as the incident angle becomes larger, the pulse energy density of the laser beam incident at the position becomes smaller, and the processability changes. . Therefore, in order to maintain the predetermined processability, it is necessary to keep the pulse energy density of the laser beam entering the position constant.

可調式衰減器2同步於電磁掃描器7之動作,係能使 雷射光源1所射出雷射光束之脈衝能量變化。依據控制器 1 1發送之同步信號,以較大射入角將雷射光束射入於基 板]2時,即減小衰減率而增高自可調式衰減器2射出之 射束脈衝能量。且藉此,在射束掃描中亦能將雷射光束射 入位置之脈衝能量密度保持於一定。The adjustable attenuator 2 is synchronized with the operation of the electromagnetic scanner 7, and can change the pulse energy of the laser beam emitted by the laser light source 1. According to the synchronization signal sent by the controller 11, when the laser beam is incident on the substrate at a large incidence angle, the attenuation rate is increased and the beam pulse energy emitted by the adjustable attenuator 2 is increased. Furthermore, the pulse energy density of the laser beam incident position can be kept constant during the beam scanning.

又,雖不保持一定,雷射光束對於基板]2之射入角 如變動時,亦可藉將可調式衰減器2所致脈衝能量之衰減 率予以變動,俾使射入位置之脈衝能量密度變動減小’而 提升加工品質。 又,將雷射光束射入基板1 2進行掃描時,亦可同步 於電磁掃描器7之動作,促使遮罩5之貫通孔的成像倍率 (縮小率)變化同時,將雷射光束射入位置之脈衝能量密度 保持於一定。可滿足下示兩式地, Δ 2 = f 2 χΔι / (b— f— Δ]) / (b— f) · · · (2) [(a+Z\2)/(b — Δ〕)]2 二(a/b)2/cos6 ...(3) -23- (20) 1221102 對應雷射光束之向基板1 2的射入角(9 (基板1 與射入光所成之角度)加以設定Δ 1與A 2,對應射 移動遮罩5及物鏡6,促使遮罩5至物鏡6之光路 保持於a + Δ 2、物鏡6至基板1 2上之射入位置的 長度保持於b - △ I即可。在此,a、b分別是0爲 遮罩5至物鏡6之光路徑長度,及物鏡6至基板1 射入位置的光路徑長度。又,f爲物鏡6之焦距。 未嚴密滿足上式(2)及(3),射入角如變動時,藉變 倍率以趨小光束點面積,而能改善雷射加工品質。 變大時,將成像倍率(縮減率)予以趨小即可。 圖6爲具有可變化物鏡6至基板12上之射入 光路徑長度b的光路徑調整機構2 0之第一實施例 例有關之雷射加工裝置槪略圖。自圖1所示雷射加 除去音圈機構9及1 〇,而加入光路徑調整機構2 0 構成則與圖1所示雷射加工裝置之構成相同。在圖 雷射加工裝置,其遮罩5至物鏡6之光路徑長度a 。藉光路徑調整機構20乃能例如同步於電磁掃描| 動作,在雷射光束之掃描中,將物鏡6至基板1 2 入位置的光路徑長度b經常保持爲一定。藉此可使 之貫通孔經常以所定成像倍率(縮小率)在基板1 2 ,以加圖3 B所示之溝槽。 圖7爲光路徑調整機構2 0之槪略圖。光路徑 構2 0係含有例如2丨a〜2〗d四個反射鏡所構成。四 鏡分別促使所射入雷射光束之進行方向變化如90 2法線 入角β 徑長度 光路徑 0時之 2上之 又,雖 化成像 射入角 位置的 的變形 工裝置 。其他 6所示 爲一定 器7之 上之射 遮罩5 上成像 調整機 個反射 。,且 ^ -j ct -24- (21) 1221102In addition, although it does not remain constant, if the incident angle of the laser beam to the substrate 2 is changed, the attenuation rate of the pulse energy caused by the adjustable attenuator 2 can be changed to make the pulse energy density at the incident position. Less variation 'and improve processing quality. In addition, when the laser beam is incident on the substrate 12 for scanning, the operation of the electromagnetic scanner 7 may be synchronized, and the imaging magnification (reduction rate) of the through hole of the mask 5 may be changed, and the laser beam may be incident on the position. The pulse energy density is kept constant. Can satisfy the following two formulas, Δ 2 = f 2 χΔι / (b— f— Δ]) / (b— f) · · · (2) [(a + Z \ 2) / (b — Δ]) ] 2 Two (a / b) 2 / cos6 ... (3) -23- (20) 1221102 Corresponds to the incident angle of the laser beam to the substrate 12 (9 (the angle formed by the substrate 1 and the incident light) ) Set Δ 1 and A 2 to move the mask 5 and the objective lens 6 corresponding to the shot, so that the optical path from the mask 5 to the objective lens 6 is maintained at a + Δ 2. The length of the incident position on the objective lens 6 to the substrate 12 is maintained at b-△ I. Here, a and b are respectively 0 is the length of the light path from the mask 5 to the objective lens 6, and the length of the light path from the objective lens 6 to the incidence position of the substrate 1. Also, f is the focal length of the objective lens 6. The above formulas (2) and (3) are not strictly met. When the incident angle is changed, the laser processing quality can be improved by changing the magnification to reduce the beam spot area. When it becomes larger, the imaging magnification (reduction rate) Fig. 6 is a schematic view of a laser processing apparatus related to the first embodiment of the optical path adjusting mechanism 20 having the incident light path length b of the variable objective lens 6 to the substrate 12. From Fig. 1 The laser plus shown removes the voice coil mechanisms 9 and 10, and the plus The configuration of the light path adjustment mechanism 20 is the same as that of the laser processing apparatus shown in FIG. 1. In the laser processing apparatus, the light path length a of the mask 5 to the objective lens 6 is a. The light path adjustment mechanism 20 can, for example, Synchronized with the electromagnetic scanning | action, during the scanning of the laser beam, the optical path length b of the objective lens 6 to the substrate 1 2 entry position is always kept constant. This allows the through-holes to always be at a predetermined imaging magnification (reduction rate) On the substrate 1 2, the groove shown in FIG. 3B is added. FIG. 7 is a schematic view of the light path adjusting mechanism 20. The light path structure 20 is composed of, for example, two reflection mirrors 2a to 2d. The four mirrors respectively cause the direction of the incident laser beam to change, such as 90 2 normal angle of incidence β diameter length of the light path 0 to 2 times, although the deformation device of the imaging angle of incidence. Other 6 Shown is a reflection of the imaging adjustment machine on the shooting mask 5 above the certain device 7. and ^ -j ct -24- (21) 1221102

由光路徑調整機構20將雷射光束以平行於所射入雷射光 束進行方向之方向予以射出。反射鏡2 1 a與2 1 b兩個即形 成移動部22。移動部22則沿圖中箭頭方向移動。物鏡6 至基板1 2上之射入位置的光路徑長度b可使移動部2 2變 位加以調整。當雷射光束對於基板1 2之射入角變大時, 移動部2 2乃在圖7向上移動,藉縮短光路徑調整機構2 0 內之雷射光束的光路徑長度,而能將光路徑長度b保持於 一定。移動部22之移動,可接受控制器1 1之信號進行之 。控制器1 1又藉促使電磁掃描器7之動作與移動部2 2之 移動同步,而將圖6所示物鏡6至基板1 2上之射入位置 的光路徑長度b保持於一定。The laser beam is emitted by the optical path adjustment mechanism 20 in a direction parallel to the direction in which the incident laser beam enters. The two mirrors 2 1 a and 2 1 b form a moving portion 22. The moving part 22 moves in the direction of the arrow in the figure. The optical path length b from the objective lens 6 to the incident position on the substrate 12 can be adjusted by displacing the moving portion 2 2. When the incident angle of the laser beam to the substrate 12 becomes larger, the moving part 22 moves upward in FIG. 7. By shortening the optical path length of the laser beam in the optical path adjustment mechanism 20, the optical path can be changed. The length b is kept constant. The movement of the moving part 22 can be performed by a signal from the controller 11. The controller 11 also keeps the optical path length b of the objective lens 6 shown in FIG. 6 to the incident position on the substrate 12 constant by promoting the movement of the electromagnetic scanner 7 and the movement of the moving section 22.

在圖6所示雷射加工裝置,雖將光路徑調整機構2 0 爲調整光路徑長度b予以加入,惟爲調整光路徑長度a亦 可插入於遮罩5與物鏡6之間。藉利用兩個光路徑調整機 構2 0,在雷射光束之掃描中,亦能將光路徑長度a及光 路徑長度b調整爲可滿足於關係式(1 )。 又,隨著所進行之加以,爲調整光路徑長度a或光路 徑長度b而僅使遮罩5、物鏡6中之任一方移動亦無妨。 例如可將物鏡6固定,僅移動遮罩5以滿足關係式(1 )。 以加工對象物,雖考慮在玻璃基底材料上形成ITO膜 之基板,惟使用矽基板上形成聚醯亞胺膜之基板,對聚醯 亞胺膜部分予以加工亦可。該等可作爲太陽電池基板或液 晶基板使用。又,亦能加工呈聚酿亞胺膜上形成有1 T 0膜 之觸摸面板、或再加工半導體膜等。又,亦可加工薄膜狀 -25- (22) (22)1221102 之加工對象物。 圖8 A爲搬運薄膜3 0用之搬運機構3 1槪略圖。薄膜 3 0即由搬運機構3 1予以搬運。真空夾頭3 2係固定被搬 運過來之薄膜3 0上的所定加工位置,以劃定被加工面° 且藉將由電磁掃描器7掃描之雷射光束射入於由真空夾頭 3 2所固定之薄膜3 0上,而進行所定加工位置之加工。當 完成所定加工位置之加工時,搬運機構3 1乃搬走薄膜3 0 ,以真空夾頭3 2固定另外加工位置,再進行加工。 以往是將真空夾頭32固定之薄膜30以XY方向平台 予以移動,藉使用固定光學系統照射射束而進行加工。在 本實施例,則由電磁掃描器7掃描射束,將射束射入於·加 工位置以進行加工,因此能增快加工速度。 圖8 B爲具有旋轉編碼器3 3之搬運機構3 1槪略圖。 旋轉編碼器3 3可檢測搬運機構3 1所搬運之薄膜3 0速度 。檢測結果即被送至控制器1 1,且由控制器1 1自搬運速 度求得薄膜3 0之搬運量。控制器1 1又將從薄膜3 0之搬 運速度,及薄膜3 0上所劃定之所定加工位置的資料而作 成之控制信號發送至電磁掃描器7。再由電磁掃描器7接 受控制信號掃描雷射光束,對薄膜3 0上之所定加工位置 照射射束以進行加工。 由於不需要XY方向平台’可隨著搬運薄膜30進行 加工,是故能增快加工速度。 藉利用自圖1所示雷射加工裝置除去圓錐光學系統4 、遮罩5及音圈機構9之雷射加工裝置,亦能進行焦點加 -26 - (23) (23)1221102 工。雷射光束係由物鏡6予以聚焦在基板1 2上成像。當 電磁掃描器7作動,致雷射光束掃描基板1 2上,而基板 1 2上之射束射入位置變化時,物鏡6乃沿與通過物鏡6 之射束進行方向呈平行的方向移動,促使由音圈機構1 0 將物鏡6至基板1 2之雷射光束的光路徑長度b保持於一 定。且藉該移動,雷射光束經常在基板1 2上成像。於是 ,能實現品質良好之加工。 本實施例雖使用脈衝雷射光束,爲隨著所進行加工, 亦可使用連續波雷射光束。又,以雷射光源雖使用含有波 長變換單元之Nd : YAG雷射振盪器,而射出Nd : YAG 雷射之三倍高次諧波,但亦可使用固體雷射之基本波〜五 倍高次諧波。又,亦能使用C02雷射等。 又,在本實施例雖以高速掃描光學系統使用電磁掃描 器,然亦可使用利用多角鏡之高速掃描光學系統。由於並 非藉X Y方向平台移動加工對象物以改變雷射光束之射入 位置,而是使用高速掃描光學系統掃描雷射光束以改變雷 射光束之射入位置,因此能提升加工速度。 在上述焦點加工方法,係令雷射光束經常成像於基板 表面。接著,就將雷射光束焦點與基板表面之位置關係對 應雷射光束之基板表面射入位置予以調整,而進行品質良 好的加工方法說明之。 圖1 2 A所示第二實施例之雷射加工裝置,則是自圖1 所示雷射加工裝置除去圓錐光學系統4、遮罩5及音圈機 構9,更被除去可調式衰減器2,且在擴張器3與物鏡6 -27- (24) (24)1221102 間配置有具圓形貫通孔可調節射束直徑之孔徑5 a。而並 不需將孔徑5 a之貫通孔成像於基板1 2表面。 藉利用音圈機構1 〇使物鏡6沿通過物鏡6之雷射光 束進行方向平行移動,將雷射光束焦點接近於基板1 2表 面或自基板1 2表面予以離開,而調節照射於基板表面之 雷射光束的脈衝能量密度。 由於控制器1 1所發送控制信號,電磁掃描器7係使 雷射光束以所盼之時序搖擺於所盼之進行方向。藉自控制 器1 1所發送控制信號,令音圈機構1 0同步於電磁掃描器 7作動,對應雷射光束之射入位置,能將雷射以所盼之脈 衝能量密度照射基板1 2。 參照圖13以說明使用圖12A之雷射加工裝置的雷射 加工方法一例。在圖1 3上側,槪略地顯示經過物鏡6、電 磁掃描器7進行掃描基板1 2上之雷射光束光路徑。 雷射光束L 1 b乃垂直地射入於基板表面之射入位置 Ml。雷射光束Lla,Llc分別以射入角α 1射入於射入位置 Ν 1 a,Ν 1 c。射入位置Μ 1則位於以射入位置Ν 1 a , Ν 1 c爲兩 端之線分中點。 圖1 3下側爲顯示自電磁掃描器7側向下觀看之基板 表面。光束點 91a591b,91c是分別顯示雷射光束 Lla, Llb.Llc之在基板表面的(即射入位置Nla,Ml,Nlc的)光束 點。 使雷射光束之進行方面自雷射光束L 1 a之光路徑搖擺 至雷射光束L 1 c之光路徑一方地,反覆照射脈衝雷射光束 -28- (25)1221102 ,與圖10A、圖10B所示一樣,俾 成孔穴予以連續地’在基板表面形 首先照射形成溝槽1 0 1之起點 物鏡6之位置設定於可使雷射光身 N 1 a。且,將光束點之大小呈最小 點。 當照射形成溝槽1 〇 1之終點的 鏡6之位置設定於可使雷射光束L 。由於物鏡6至射入位置Nla,Nlc 可認爲物鏡6之位置在溝槽加工開 。由於雷射光束Lla及Lie之射入 點9 1 a與9 1 c面積相同。 在此先說明將物鏡6固定於該 之掃描以形成溝槽時,會產生何種 將物鏡6固定於可使雷射光身 成像(或雷射光束L 1 c在射入位置: 電磁掃描器7搖擺進行方向之雷射 假想面設爲聚光面8 1 a。聚光面8 1 光束L I b之焦點位置。 在射入位置N 1 a,N 1 c以外之溝 雷射光束則在聚焦呈焦點之途中射 至焦點之距離愈長,射入位置之射 徑愈大。射入位置與焦點之距離, 射光束Lib爲最大。 使各照射雷射位置所形 成溝槽1 〇 1。 的雷射光束L 1 a時,將 艮L 1 a成像於射入位置 的點稱爲雷射光束之焦 雷射光束L 1 c時,將物 1 c成像於射入位置N 1 c 之光路徑長度略同,故 發時與結束時相同。又 角相同,亦可認爲光束 位置原樣進行雷射光束 問題。 C Lla在射入位置Nla N 1 c成像)的位置時,被 光束的焦點軌跡所描繪 a上之點R即顯示雷射 槽1 0 1上的射入位置, 入於基板。自射入位置 束直徑比焦點之射束直 以照射於溝槽中央之雷 -29- (26)1221102 雷射光束之脈衝能量密度,通常,射束剖面之中心比 外周近旁爲高。射束直徑變大時,射束剖面 Π內之各位 置脈衝能量密度即降低。因此,射束直徑雖變大,呈能加 工基板之閾値以上脈衝能量密度的領域卻僅限於射束剖面 之中心附近。In the laser processing apparatus shown in FIG. 6, although the light path adjustment mechanism 20 is added to adjust the light path length b, the light path length a can also be inserted between the mask 5 and the objective lens 6. By using two light path adjustment mechanisms 20, the light path length a and the light path length b can also be adjusted to satisfy the relational expression (1) in the scanning of the laser beam. In addition, as long as the light path length a or the light path length b is adjusted, only one of the mask 5 and the objective lens 6 may be moved. For example, the objective lens 6 may be fixed and only the mask 5 may be moved to satisfy the relational expression (1). For the object to be processed, although it is considered to form a substrate of ITO film on a glass base material, a substrate of polyimide film formed on a silicon substrate may be used to process the polyimide film portion. These can be used as solar cell substrates or liquid crystal substrates. It is also possible to process a touch panel in which a 1 T 0 film is formed on a polyimide film, or process a semiconductor film. It is also possible to process film-shaped objects -25- (22) (22) 1221102. FIG. 8A is a schematic view of a conveying mechanism 31 1 for conveying the film 30. The film 30 is transferred by the transfer mechanism 31. The vacuum chuck 3 2 fixes a predetermined processing position on the film 30 that is being transferred to delineate the processed surface °, and the laser beam scanned by the electromagnetic scanner 7 is injected into the vacuum chuck 3 2 for fixing. The film 30 is processed on a predetermined processing position. When the processing at the predetermined processing position is completed, the conveying mechanism 31 removes the film 30 and fixes another processing position with the vacuum chuck 32 to perform processing. Conventionally, the film 30 fixed by the vacuum chuck 32 is moved in the XY direction stage, and processed by irradiating a beam using a fixed optical system. In this embodiment, since the beam is scanned by the electromagnetic scanner 7, and the beam is irradiated to the processing position for processing, the processing speed can be increased. FIG. 8B is a schematic view of a carrying mechanism 31 with a rotary encoder 33. The rotary encoder 3 3 can detect the speed of the film 30 carried by the carrying mechanism 31. The test result is sent to the controller 11 and the controller 11 determines the transport amount of the film 30 from the transport speed. The controller 11 sends control signals to the electromagnetic scanner 7 from the transport speed of the film 30 and the data of the predetermined processing position defined on the film 30. The electromagnetic scanner 7 receives the control signal to scan the laser beam, and irradiates the beam to a predetermined processing position on the film 30 for processing. Since the XY-direction stage is not required, processing can be performed with the film 30 being transported, so that the processing speed can be increased. By using a laser processing device that removes the conical optical system 4, the mask 5, and the voice coil mechanism 9 from the laser processing device shown in FIG. 1, it is also possible to perform focus addition -26-(23) (23) 1221102. The laser beam is focused by the objective lens 6 and imaged on the substrate 12. When the electromagnetic scanner 7 is activated, the laser beam scans the substrate 12 and the incident position of the beam on the substrate 12 changes, the objective lens 6 moves in a direction parallel to the direction of the beam passing through the objective lens 6, The voice coil mechanism 10 is caused to keep the optical path length b of the laser beam from the objective lens 6 to the substrate 12 constant. And by this movement, the laser beam is often imaged on the substrate 12. Thus, good quality processing can be achieved. Although a pulse laser beam is used in this embodiment, a continuous wave laser beam may be used in accordance with the processing. In addition, although a laser light source uses a Nd: YAG laser oscillator including a wavelength conversion unit and emits three times higher harmonics of Nd: YAG lasers, the fundamental wave of a solid laser can also be used ~ five times higher Subharmonic. In addition, C02 lasers can also be used. Although the electromagnetic scanner is used as the high-speed scanning optical system in this embodiment, a high-speed scanning optical system using a polygon mirror may be used. Since the processing object is not moved by the X Y direction platform to change the incident position of the laser beam, the high-speed scanning optical system is used to scan the laser beam to change the incident position of the laser beam, so the processing speed can be increased. In the above focus processing method, the laser beam is often imaged on the substrate surface. Next, the positional relationship between the focus of the laser beam and the substrate surface is adjusted in accordance with the incident position of the substrate surface of the laser beam, and a good quality processing method is explained. The laser processing apparatus of the second embodiment shown in FIG. 1A is obtained by removing the conical optical system 4, the mask 5, and the voice coil mechanism 9 from the laser processing apparatus shown in FIG. 1, and removing the adjustable attenuator 2 An aperture 5 a with a circular through-hole to adjust the beam diameter is arranged between the expander 3 and the objective lens 6 -27- (24) (24) 1221102. It is not necessary to image the through-holes with a diameter of 5 a on the surface of the substrate 12. By using the voice coil mechanism 10 to move the objective lens 6 in parallel along the direction of the laser beam passing through the objective lens 6, the focal point of the laser beam is close to or away from the surface of the substrate 12, and the surface of the substrate is adjusted to be irradiated. Pulse energy density of a laser beam. Because of the control signal sent by the controller 11, the electromagnetic scanner 7 makes the laser beam swing in the desired direction at the desired timing. By using the control signal sent from the controller 11, the voice coil mechanism 10 is synchronized with the electromagnetic scanner 7, and the laser beam can be irradiated to the substrate 12 with the desired pulse energy density corresponding to the incident position of the laser beam. An example of a laser processing method using the laser processing apparatus of Fig. 12A will be described with reference to Fig. 13. On the upper side of FIG. 13, the light path of the laser beam on the substrate 12 scanned through the objective lens 6 and the electromagnetic scanner 7 is shown briefly. The laser beam L 1 b is incident at an incident position M1 perpendicular to the substrate surface. The laser beams Lla, Llc are incident at the incident positions Ν 1 a, Ν 1 c at an incident angle α 1, respectively. The injection position M 1 is located at the midpoint of the line with the injection positions N 1 a and N 1 c as the two ends. The lower side of FIG. 13 shows the surface of the substrate viewed downward from the electromagnetic scanner 7 side. The beam points 91a591b and 91c are the beam points on the surface of the substrate (ie, the incident positions Nla, Ml, Nlc) of the laser beams Lla, Llb. Llc, respectively. Make the laser beam progress from the light path of the laser beam L 1 a to the light path of the laser beam L 1 c, and irradiate the pulsed laser beam -28- (25) 1221102 repeatedly, as shown in FIG. 10A and FIG. As shown in FIG. 10B, the holes are continuously formed on the surface of the substrate, and the starting point of the objective lens 6 which is firstly irradiated to form the groove 1 0 1 is set to the position of the laser beam N 1 a. In addition, the size of the beam spot is minimized. The position of the mirror 6 when the end point of the groove 101 is irradiated is set to enable the laser beam L. Since the objective lens 6 reaches the injection position Nla, Nlc can consider that the position of the objective lens 6 is in the groove processing. Since the incident points of the laser beams Lla and Lie are 9 1 a and 9 1 c, they have the same area. The following first describes what happens when the objective lens 6 is fixed to the scan to form a groove. Fixing the objective lens 6 to image the laser beam (or the laser beam L 1 c is at the entrance position: electromagnetic scanner 7) The imaginary plane of the laser in the swinging direction is set to the focusing surface 8 1 a. The focusing surface 8 1 is the focal position of the beam LI b. The groove laser beam at the incident positions N 1 a and N 1 c is in focus. The longer the distance from the focal point to the focal point on the way, the larger the diameter of the incident position. The distance between the incident position and the focal point is the largest beam Lib. The groove formed by each irradiated laser position is 〇1. When the light beam L 1 a is shot, the point at which L 1 a is imaged at the incident position is called the focal laser beam L 1 c of the laser beam, and the light path length of the object 1 c at the incident position N 1 c is slightly shorter. At the same time, it is the same at the end and at the same time. With the same angle, the laser beam can be considered as the beam position as it is. C Lla is depicted by the focus trajectory of the beam when it is at the incident position (Nla N 1 c imaging). The point R on a indicates the injection position on the laser groove 101, and it enters the substrate. Since the incident position, the diameter of the beam is straighter than that of the focused beam, and the pulse energy density of the laser beam shining at the center of the trench is -29- (26) 1221102. Generally, the center of the beam profile is higher than the vicinity of the periphery. As the beam diameter becomes larger, the energy density of the individual pulses in the beam profile Π decreases. Therefore, although the beam diameter becomes larger, the area where the pulse energy density above the threshold of the substrate can be processed is limited to the vicinity of the center of the beam profile.

溝槽1 〇 1牺部之射入位置N 1 a · N 1 c近旁,係以局脈衝 能量密度被照射射束直徑雖小惟脈衝能量密度到射束剖面 外周近旁依然呈加工閾値以上之雷射光束,而被形成寬度 較粗之溝槽。另,在射束剖面中心之射入位置Μ 1近旁, 乃以低脈衝能量密度被照射射束直徑雖大惟脈衝能量密度 僅在射束剖面中心之狹窄領域呈加工閾値以上之雷射光束 ,而被形成寬度較細之溝槽。如此,溝槽寬度隨著位置而 變動。Trench 1 〇1 Near the entrance position N 1 a · N 1 c of the sacrificial part is irradiated with a local pulse energy density. Although the beam diameter is small, the pulse energy density is still near the periphery of the beam profile. The light beam is emitted, and a groove having a relatively wide width is formed. In addition, near the incident position M 1 at the center of the beam profile, the laser beam irradiated with a low pulse energy density has a large beam diameter, but the pulse energy density is only in a narrow area of the center of the beam profile. A narrower trench is formed. In this way, the groove width varies depending on the position.

又,雷射光束Lib之射入位置Ml至聚光面81a上之 點R的距離是射入角α 1愈大愈長。於是,射入角α 1愈 大,照射於射入位置Ν 1 a,N 1 c之雷射射束直徑與照射於射 入位置Μ 1之雷射射束直徑的差愈大。亦即,溝槽端部與 中央之寬度差愈顯著。由於射入角α 1爲形成溝槽端部之 雷射光束射入角,致例如在大型基板形成較長溝槽時等會 變大。 其次,說明移動物鏡6位置以調節焦點位置同時進行 雷射光束掃描,而形成溝槽之方法。調節雷射光束之焦點 位置,照射於基板之雷射光束的射束直徑即被調節,可調 節基板表面之脈衝能量密度。 -30- (27) (27)1221102 茲考慮射入於射入位置Μ 1之雷射光束L 1 b的焦點對 準何處較適宜。將焦點設定於比聚光面8 1 a上之點R更接 近於射入位置 Μ1,係能縮小射束直徑,使射入位置 Μ 1 之脈衝能量密度增加予以補正。惟,將焦點愈接近於射入 位置Μ 1時,射入位置Μ 1之脈衝能量密度變爲比射入位 置Nla.Nlc之脈衝能量密度高。 且由於雷射光束Lib是垂直射入於基板表面,因此在 射入位置Μ 1成像之光束點呈圓形。另,由於雷射光束 L 1 a , L 1 c是以射入角α 1斜向射入於基板表面,因此光束 點91a,91c呈擴寬之橢圓形狀。亦即,雷射光束Lib在射 入位置Μ 1成像時之光束點9 1 b的脈衝能量密度,比光束 點91 a, 91c之脈衝能量密度爲高。 於是,將雷射光束L 1 b之焦點對準於比射入位置Μ 1 稍深(自射入位置Μ 1向基板內部較遠)位置,促使光束點 91b之面積等於射入位置Nla之光束點91a,91c的面積。 如此’則能以與射入位置N 1 a或N 1 c以及Μ 1相同之脈衝 能量密度照射雷射而進行加工。 在溝槽1 0 1上之其他射入位置,亦可將光束點之面積 保持爲一定以整齊脈衝能量密度,予以進行加工。將溝槽 1 〇 1上以不變化光束點面積之條件進行掃描時之焦點軌跡 即爲聚光面81b。且雷射光束Lib之焦點位置是聚光面 8 1 b上之點Q。 茲說明使焦點沿聚光面8 1 b上予以移動時,如何調整 物鏡6之位置。首先,將物鏡6設定於照射雷射光束l 1 a -31 - (28)1221102 時可在射入位置N 1 a成像之位置。該位置被稱爲基準位置The distance from the incident position M1 of the laser beam Lib to the point R on the light-condensing surface 81a is such that the incident angle α 1 becomes larger and longer. Therefore, the larger the incidence angle α 1 is, the larger the difference between the diameter of the laser beam irradiated at the injection positions N 1 a, N 1 c and the diameter of the laser beam irradiated at the injection position M 1 is. That is, the width difference between the groove end and the center becomes more significant. The incident angle α 1 is the incident angle of the laser beam that forms the end of the trench, and it becomes large when, for example, a long trench is formed on a large substrate. Next, a method of forming a groove by moving the position of the objective lens 6 to adjust the focal position while performing laser beam scanning will be described. By adjusting the focal position of the laser beam, the beam diameter of the laser beam irradiated on the substrate is adjusted to adjust the pulse energy density on the substrate surface. -30- (27) (27) 1221102 Let us consider where the focus alignment of the laser beam L 1 b incident on the incident position M 1 is more appropriate. Setting the focal point closer to the incident position M1 than the point R on the light-condensing surface 8 1 a can reduce the beam diameter and increase the pulse energy density of the incident position M 1 to correct it. However, the closer the focus is to the injection position M 1, the pulse energy density of the injection position M 1 becomes higher than the pulse energy density of the injection position Nla.Nlc. And because the laser beam Lib is incident on the substrate surface vertically, the beam spot imaged at the incident position M 1 is circular. In addition, since the laser beams L 1 a and L 1 c are incident on the substrate surface obliquely at an incidence angle α 1, the beam points 91a and 91c have widened elliptical shapes. That is, the pulse energy density of the beam point 9 1 b when the laser beam Lib is imaged at the incident position M 1 is higher than the pulse energy density of the beam points 91 a, 91c. Thus, the laser beam L 1 b is focused at a position slightly deeper than the incident position M 1 (farther from the incident position M 1 toward the inside of the substrate), so that the area of the beam spot 91 b is equal to the beam at the incident position Nla Area of points 91a, 91c. In this way, processing can be performed by irradiating the laser with the same pulse energy density as the injection positions N 1 a or N 1 c and M 1. At other incident positions on the grooves 101, the area of the beam spot can also be maintained to be a certain pulse energy density for processing. The focus track when the groove 101 is scanned without changing the beam spot area is the light-condensing surface 81b. And the focal position of the laser beam Lib is the point Q on the light-condensing surface 8 1 b. The following describes how to adjust the position of the objective lens 6 when the focal point is moved along the light-condensing surface 8 1 b. First, the objective lens 6 is set to a position where the laser beam l 1 a -31-(28) 1221102 can be imaged at the incident position N 1 a when the laser beam is irradiated. This position is called the reference position

將雷射光束由射入位置N 1 a向Μ 1予以掃描時,藉使 物鏡6自基準位置徐徐移向雷射光源,令焦點沿比聚光面 81a更接近於基板表面之聚光面81b移動,光束點之面積 即變大,而可抑制脈衝能量密度降低。物鏡6自基準位置 之移動距離,乃就射入於射入位置Nla之雷射光束 Lla 予以設爲零,隨著雷射愈往射入位置Μ 1愈予以增大,就 射入於射入位置Μ 1之雷射光束L 1 b予以設爲最大。 繼之,將雷射光束由射入位置Μ 1向射入位置N 1 c進 行掃描時,使物鏡6徐徐接近於基準位置即可。物鏡6·與 基準位置之離間距離,則隨著雷射光束愈往射入位置Ν 1 c 愈予以減少,就射入於射入位置Ν 1 c之雷射光束L 1 c予 以設爲零。When the laser beam is scanned from the incident position N 1 a to M 1, the objective lens 6 is gradually moved from the reference position to the laser light source, so that the focal point is closer to the light collecting surface 81 b than the light collecting surface 81 a of the substrate surface. By moving, the area of the beam spot becomes larger, and the reduction of the pulse energy density can be suppressed. The moving distance of the objective lens 6 from the reference position is to set the laser beam Lla incident on the incident position Nla to zero, and as the laser increases toward the incident position M1, it is incident on the incident The laser beam L 1 b at the position M 1 is set to the maximum. Then, when the laser beam is scanned from the incident position M 1 to the incident position N 1 c, the objective lens 6 may be brought close to the reference position slowly. The distance between the objective lens 6 and the reference position decreases as the laser beam approaches the incident position N 1 c, and the laser beam L 1 c incident on the incident position N 1 c is set to zero.

如是,藉使射入各射入位置之雷射光束焦點沿聚光面 8 1 b上移動地調節物鏡6之位置予以進行掃描雷射,而能 抑制寬幅隨著處所變動以形成溝槽1 〇 1。 就使溝槽1 〇 I移動之方法加以歸納。不移動物鏡6位 置繼續掃描致基板表面之脈衝能量密度降低時,係移動物 鏡6促使雷射光束焦點接近於射入位置,以抑制脈衝能量 密度之降低。不移動物鏡6位置繼續掃描致基板表面之脈 衝能量密度上升時,相反地,移動物鏡6促使雷射光束焦 點位置離開射入位置,以抑制脈衝能量密度之上升即可。 以加工一例,雖說明在溝槽兩端射入位置令焦點對準 -32- (29) (29)I22tt02 於基板表面之方法,惟將焦點對準於另別之射入位置亦可 。由於只要將各射入位置之光束點保持於略一定面積,就 能整齊脈衝能量密度進行加工,故對任何射入位置均能保 持所定之加工性。 又,不必將所照射雷射光束之脈衝能量密度在各射入 位置予以保持於一定,僅在射入位置變動時抑制射入位置 之脈衝能量密度變動,乃能良好地進行加工。 雖將溝槽加工(劃割加工)爲例加以說明,惟亦可進行 開鑿孔穴加工等。又雖說明將電磁掃描器掃描於一維方向 之侈ϋ,惟予以掃描二維方向,以進行基板全面之加工亦可 又將使用脈衝雷射光束之加工爲例加以說明,惟雷射光 束爲連續波亦無妨。以連續波雷射光束加工時,則需抑制 被加工面之功率密度隨著各射入位置變動。 照射於基板之雷射光束的脈衝能量密度,替代移動物 鏡6,亦可利用可調式衰減器予以調節。 圖12Β所示第二實施例之變形例的雷射加工裝置,就 是在圖12 Α所示雷射加工裝置追加可調式衰減器2者。 可調式衰減器2係依據控制器1 1發送之控制信號,與電 磁掃描器7之動作同步,將照射於基板1 2之脈衝雷射光 束的功率,以所盼之衰減率予以衰減。 茲參照圖1 4以說明利用可調式衰減器之雷射加工方 法一例。圖1 4爲在圖1 2 B所示雷射加工裝置之經過物鏡 6、電磁掃描器7,而掃描基板12上之雷射光束光路徑的 槪略顯示圖。 -33- (30) (30)1221102 雷射光束L2b係垂直地射入於基板表面之射入位置 M2。雷射光束L2a,L2c分別以射入角α 2射入於射入位置 N2a J2c。且射入位置M2位於以射入位置N2a.N2c爲兩 端之線分中點。 物鏡6被固定於雷射光束L2b可在射入位置M2成像 之位置。將由電磁掃描器7予以搖擺進行方向之雷射光束 焦點所描繪假想面設作聚光面82。 與參照圖1 3進行說明一樣,使雷射光束之進行方向 自雷射光束L2a光路徑搖擺爲雷射光束L2c光路徑地,反 覆照射脈衝雷射光束,而在基板表面形成溝槽。 隨著雷射光束射入位置愈離開射入位置M2,雷射光 束成像再射入於基板之距離變長。由於通過焦點後之雷射 光束變爲發散射束,致自焦點至射入位置之距離愈長,基 板表面之光束點變爲愈大。 又,隨著射入位置愈離開射入位置Μ 2,雷射光束對 基板之射入角愈變大。雖以具相同射束直徑之雷射光束加 以照射,亦隨著射入角愈大’基板表面之光束點愈大。 如參照圖1 3所作說明’較大光束點內之脈衝能量密 度則射束剖面全體降低,呈能加工基板之閾値以上卻僅限 於射束剖面中心附近。因此,由較大光束點照射所形成之 溝槽寬度較細。 對於任何射入位置均以一定之脈衝能量照射雷射予以 形成溝槽時,溝槽中央附近被形成爲寬度較粗’溝槽端部 被形成寬度較細。 -34- (31) (31)1221102 於是,促使基板表面之脈衝能量密度在任何位置均呈 一定地,由可調式衰減器2對應射入位置予以調節功率。 將功率衰減量,在加工溝槽端部時設爲最小’隨著愈往溝 槽中心愈增大,且在照射溝槽中心之射入位置M2時設爲 最大。如此,即能抑制寬度隨著處所變動,而形成溝槽。 又,爲圖謀照射於基板之雷射光束的脈衝能量密度之 均勻化,亦可將由音圈機構1 0移動物鏡6促使焦點位置 移動,與由可調式衰減器2衰減脈衝雷射光束之組合加以 利用。 又,雷射光束亦可爲連續波。以連續波雷射光束進行 加工時,則可抑制被加工面之功率密度隨著各射入位置變 動地,以可調式衰減器調節連續波雷射光束之功率。 而,在例如表面形成ITO膜之玻璃基底材料的加工, 乃有基板尺寸大型化之趨勢。隨著基板大型化,被加工領 域變大時,即在如參照圖1 3所說明之對應雷射光束射入 位置移動物鏡6予以進行之加工,會發生物鏡6移動量變 大之情形。但自控制之容易性的觀點言之,能使物鏡6移 動量趨小較佳。 接著,參照圖1 5 A,就將物鏡6之移動抑制於短距離 ’並能增長雷射光束之焦點位置移動距離的第三實施例之 雷射加工裝置加以說明。 在圖1 5 A所示雷射加工裝置,係在圖1 2 A所示雷射 加工裝置之物鏡6與電磁掃描器7間,追加有二次聚光鏡 7 1。且,在圖1 5 A之說明’將物鏡6稱爲一次聚光鏡6。 -35- (32) (32)1221102 自孔徑5 a所射出雷射光束,乃射入於一次聚光鏡6 。一次聚光鏡6即將雷射光束聚光於假想性一次聚光面 8 3上。通過一次聚光面8 3之雷射光束則變爲發散射束射 入於二次聚光鏡7 1。由二次聚光鏡7 1予以收歛之雷射光 束即被電磁掃描器7搖擺進行方向射入於基板1 2。 其次,說明一次聚光鏡6之移動量。使一次聚光鏡6 接近於二次聚光鏡7 1時,由二次聚光鏡7 1收歛之雷射光 束焦點位置係沿雷射光束進行方向移動。將一次聚光面 8 3之移動距離設爲d 1、將雷射光束焦點之移動距離設爲 d 2。且,將對於射入二次聚光鏡7 1之雷射光束的二次聚 光鏡7】之數値口(孔)徑設爲N A 2。將倍率P定義爲 P=NA1/NA2 時, d 2 = d 1 χ p 2 可成立。 自上述可知,將倍率p增大,就是縮短一次聚光面 8 3之移動距離d 1,亦能增長焦點之移動距離d 2。例如, 倍率P爲2時,藉使一次聚光面8 3以2 m m接近二次聚光 鏡7】,而可使雷射光束之焦點向雷射光束進行方向移動 8 m m c 一次聚光面8 3之移動,乃藉將一次聚光鏡6移動於 光軸方向進行之。射入於一次聚光鏡6之雷射光束是平行 射束時’一次聚光鏡6之移動距離與一次聚光面8 3之移 動距離即相等。如一次聚光鏡6移動距離約爲2mm以下 -36- (33) (33)1221102 ,則可利用採用壓電驅動機構之直接作用機構。藉替代音 圈機構1 0利用採用壓電驅動機構之直接作用機構,就能 以高速且高精度地移動一次聚光鏡6。 在圖1 6顯不二次聚光鏡7 1之一構成例。二次聚光鏡 7 1係由多數透鏡所構成。物點So與像點Si處在共軛關 係。該物點S 〇相當於圖1 5 A所示一次聚光面8 3上之光 束點的位置。將該成像光學系統假想是無限遠共軛之光學 系統。且將二次聚光鏡7 1分割爲前側透鏡群7 1 a與後側 透鏡群7 1 b。並將物點S 〇射出之射束藉前側透鏡群7 1 a 予以形成爲平行射束。再以後側透鏡群7 1 b將該平行射束 成像於像點S i。又,二次聚光鏡7 1雖有時無法物理性地 加以分割,但在此,假想可假定性地予以分割。 假設前側透鏡群7 1 a之前焦點距離爲Ff,後側透鏡 群7 1 b之後焦點距離爲Fr。此時,上述式所定義之倍率p 可由 p 二 Fr / Ff 表示之。 圖】5 A所示雷射加工裝置,雖將一次聚光鏡6由凸 鏡構成’惟如圖1 5B所示,由凹鏡6a構成亦可。此時, 一次聚光面8 3變爲重像,出現於比凹鏡6 a更靠近於雷射 光源側。 如是’藉將倍率P增大,乃能將一次聚光鏡6之移動 距離抑制於較短原樣,使照射於基板之雷射光束焦點位置 大大地變化。欲奏出有爲之效果,將倍率p設定爲2以上 -37- (34) (34)1221102 較妥’設定爲4以上更妥。 而,圖1 3所示光束點9 1 a · 9 1 c由於是以斜向射入於 基板之雷射光束的光束點,致呈橢圓形。另,光束點9 1 b 則是以垂直射入於基板之雷射光束的光束點,致呈圓形。 如此,射入角隨著雷射光束之射入位置相異,故基板上之 光束點形狀會產生不同。 所加工之孔穴開口,如光束點爲橢圓形即呈橢圓形, 如爲圓形即呈圓形。惟,有時亦有不管任何位置均欲將孔 穴開口形成爲同一形狀(例如圓形)之情形。 其次’參照圖1 7,就能將光束點形狀對應射入位置 可加以補正之第四實施例的雷射加工裝置說明之。 圖1 7所示雷射加工裝置是對於圖1 2所示雷射加工裝 置追加可使孔徑5 a沿垂直於雷射光束光軸之軸周圍旋轉 的孔徑傾斜機構 6 0 a,與可使孔徑 5 a沿平行於雷射光束 光軸之軸周圍旋轉的孔徑旋轉機構6〗a者。 又’孔徑旋轉機構6 1 a係爲與以後參照圖22 A說明之 雷射加工裝置所具促使遮罩旋轉的遮罩旋轉機構同樣之機 構’可使孔徑5 a旋轉於雷射光束光軸之平行軸的周圍。 孔徑傾斜機構60a、孔徑旋轉機構6 1 a分別依據控制 器1 1所發送之控制信號,同步與電磁掃描器7之動作, 而變化孔徑5 a與垂直於雷射光束光軸之軸周圍所呈傾斜 角度’及與平行於雷射光束光軸之軸周圍所呈旋轉角度。 Η比較雷射光束斜向射入於基板表面時之基板表面上 的射束剖面形狀與垂直於光軸的射束剖面形狀。基板表面 -38- (35)1221102 上之射束剖面形狀乃呈垂直於光軸的射束剖面形狀被沿基 板表而與射入面之交叉線方向拉伸的形狀。例如,圓形剖 面之雷射光束斜向射入於基板表面時,基板表面之射束剖 面即呈沿基板表面與射入面之交叉線方向較長的憜圓形t 乂,射入角愈大,基板表面之射束剖面愈呈沿交叉線方向 較長之形狀。If so, by scanning the laser by adjusting the position of the objective lens 6 while moving the focal point of the laser beam entering each of the incident positions along the light-condensing surface 8 1 b, the wide width can be suppressed to form a groove 1 as the space changes. 〇1. The method of moving the groove 101 is summarized. If the pulse energy density of the substrate surface is continuously reduced without moving the position of the objective lens 6, moving the objective lens 6 causes the focus of the laser beam to approach the incident position to suppress the decrease in the pulse energy density. If the pulse energy density of the substrate surface increases without continuing to scan the position of the objective lens 6, on the contrary, moving the objective lens 6 causes the focal position of the laser beam to move away from the incident position to suppress the increase in pulse energy density. Taking an example of processing, although the method of focusing at the injection positions at both ends of the groove to explain the focus -32- (29) (29) I22tt02 on the surface of the substrate, it is also possible to focus at another injection position. As long as the beam spot of each incident position is kept at a certain area, the pulse energy density can be processed neatly, so the predetermined processability can be maintained for any incident position. In addition, it is not necessary to keep the pulse energy density of the irradiated laser beam constant at each incident position, and only when the incident position changes, the pulse energy density variation of the incident position is suppressed, and the processing can be performed well. Although groove processing (cutting processing) is described as an example, it is also possible to perform digging and the like. Although it is explained that the electromagnetic scanner is scanned in a one-dimensional direction, it is scanned in a two-dimensional direction to complete the processing of the substrate. The processing using a pulsed laser beam can be used as an example. Continuous waves are fine. When processing with a continuous wave laser beam, it is necessary to suppress the power density of the machined surface from varying with each incident position. The pulse energy density of the laser beam irradiated on the substrate can be adjusted by using an adjustable attenuator instead of the moving objective lens 6. The laser processing apparatus according to a modified example of the second embodiment shown in FIG. 12B is the one in which an adjustable attenuator 2 is added to the laser processing apparatus shown in FIG. 12A. The adjustable attenuator 2 is based on the control signal sent by the controller 11 and synchronized with the operation of the electromagnetic scanner 7 to attenuate the power of the pulsed laser beam radiated on the substrate 12 at the desired attenuation rate. An example of a laser processing method using an adjustable attenuator will be described with reference to FIGS. FIG. 14 is a schematic view showing the optical path of the laser beam on the scanning substrate 12 through the objective lens 6 and the electromagnetic scanner 7 in the laser processing apparatus shown in FIG. 12B. -33- (30) (30) 1221102 The laser beam L2b enters the incident position M2 perpendicular to the substrate surface. The laser beams L2a and L2c are incident at the incident positions N2a J2c at an incident angle α2, respectively. The injection position M2 is located at the midpoint of the line with the injection positions N2a. N2c as both ends. The objective lens 6 is fixed to a position where the laser beam L2b can be imaged at the incident position M2. An imaginary plane drawn by the focal point of the laser beam in the swinging direction by the electromagnetic scanner 7 is set as a light collecting surface 82. As described with reference to Fig. 13, the laser beam is moved in the direction from the laser beam L2a to the laser beam L2c, and the pulse laser beam is repeatedly irradiated to form a groove on the substrate surface. As the incident position of the laser beam is further away from the incident position M2, the distance at which the laser beam is imaged and then incident on the substrate becomes longer. Since the laser beam passing through the focus becomes a scattered beam, the longer the distance from the focus to the incident position, the larger the beam spot on the substrate surface becomes. Further, as the incident position is further away from the incident position M 2, the incident angle of the laser beam to the substrate becomes larger. Although it is irradiated with a laser beam having the same beam diameter, as the incident angle becomes larger, the beam spot on the substrate surface becomes larger. As described with reference to FIG. 13 ', the pulse energy density in a larger beam spot decreases the entire beam profile, and the threshold above the threshold for processing a substrate is limited to the vicinity of the center of the beam profile. Therefore, the width of the groove formed by irradiation with a large beam spot is narrow. When a groove is formed by irradiating the laser with a certain pulse energy at any injection position, the groove is formed with a relatively wide width near the center of the groove 'and the groove end is formed with a relatively narrow width. -34- (31) (31) 1221102 Therefore, the pulse energy density on the surface of the substrate is made constant at any position, and the power is adjusted by the adjustable attenuator 2 corresponding to the injection position. The power attenuation amount is set to a minimum when machining the end of the groove, and becomes larger toward the center of the groove, and is set to a maximum when the incident position M2 of the center of the groove is irradiated. In this way, it is possible to prevent the width from varying depending on the space and form a trench. In addition, in order to make the pulse energy density of the laser beam irradiated on the substrate uniform, the focus position can be moved by the voice coil mechanism 10 moving the objective lens 6 and attenuated by the adjustable attenuator 2 use. The laser beam may be a continuous wave. When processing with a continuous wave laser beam, the power density of the machined surface can be suppressed from varying with each incident position, and the power of the continuous wave laser beam can be adjusted with an adjustable attenuator. On the other hand, processing of a glass base material having an ITO film formed on its surface, for example, tends to increase the size of the substrate. As the substrate becomes larger and the area to be processed becomes larger, that is, when the processing is performed by moving the objective lens 6 at a position corresponding to the laser beam incident position as described with reference to FIG. 13, the amount of movement of the objective lens 6 may increase. However, from the viewpoint of the ease of self-control, it is better to make the amount of movement of the objective lens 6 smaller. Next, a laser processing apparatus of a third embodiment which suppresses the movement of the objective lens 6 to a short distance and can increase the moving distance of the focal position of the laser beam will be described with reference to Fig. 15A. In the laser processing apparatus shown in FIG. 15A, a secondary condenser 71 is added between the objective lens 6 and the electromagnetic scanner 7 of the laser processing apparatus shown in FIG. 12A. In the description of FIG. 15A, the objective lens 6 is referred to as a primary condenser lens 6. -35- (32) (32) 1221102 The laser beam emitted from the aperture 5 a is incident on the primary condenser 6. The primary condenser 6 condenses the laser beam on the imaginary primary condenser surface 8 3. The laser beam passing through the primary condenser surface 83 is changed into a scattered beam and incident on the secondary condenser 71. The laser beam converged by the secondary condenser 71 is impinged on the substrate 12 by the electromagnetic scanner 7 in a swinging direction. Next, the amount of movement of the primary condenser 6 will be described. When the primary condenser 6 is brought close to the secondary condenser 71, the focal position of the laser beam converged by the secondary condenser 71 is moved in the direction of the laser beam. Set the moving distance of the primary condenser surface 8 3 to d 1 and the moving distance of the focal point of the laser beam to d 2. In addition, the number of apertures (holes) in the secondary condenser 7 for the laser beam incident on the secondary condenser 71 is set to N A 2. When the magnification P is defined as P = NA1 / NA2, d 2 = d 1 χ p 2 can be established. It can be seen from the above that increasing the magnification p means shortening the moving distance d 1 of the light-condensing surface 8 3 once, and also increasing the moving distance d 2 of the focal point. For example, when the magnification P is 2, if the primary condenser surface 83 is close to the secondary condenser lens 7 at 2 mm], the focus of the laser beam can be moved 8 mmc in the direction of the laser beam. The movement is performed by moving the primary condenser 6 in the direction of the optical axis. When the laser beam incident on the primary condenser 6 is a parallel beam, the moving distance of the primary condenser 6 and the primary condenser surface 83 are equal. If the moving distance of the primary condenser 6 is less than 2mm -36- (33) (33) 1221102, a direct-acting mechanism using a piezoelectric driving mechanism can be used. By replacing the voice coil mechanism 10 with a direct-acting mechanism using a piezoelectric driving mechanism, the condenser lens 6 can be moved at a high speed and high accuracy. One example of the configuration of the secondary condenser 71 is shown in FIG. 16. The secondary condenser 71 is composed of a plurality of lenses. The object point So and the image point Si are in a conjugate relationship. This object point S 0 corresponds to the position of the beam spot on the primary light-condensing surface 83 shown in Fig. 15A. The imaging optical system is assumed to be an infinity conjugate optical system. The secondary condenser 7 1 is divided into a front lens group 7 1 a and a rear lens group 7 1 b. The beam emitted from the object point S 0 is formed into a parallel beam by the front lens group 7 1 a. The rear lens group 7 1 b images the parallel beam at the image point S i. The secondary condenser 71 may not be physically divided, but it is assumed that the secondary condenser 71 can be divided. It is assumed that the focal distance before the front lens group 7 1 a is Ff and the focal distance after the rear lens group 7 1 b is Fr. At this time, the magnification p defined by the above formula can be expressed by p 2 Fr / Ff. Fig. 5A shows the laser processing apparatus shown in Fig. 5A. Although the primary condenser lens 6 is constituted by a convex lens', as shown in Fig. 15B, it may be constituted by a concave mirror 6a. At this time, the primary light-condensing surface 83 becomes a ghost image and appears closer to the laser light source side than the concave mirror 6a. If it is' increasing the magnification P, the moving distance of the primary condenser 6 can be kept short, and the focal position of the laser beam irradiated on the substrate can be greatly changed. If you want to play a promising effect, set the magnification p to 2 or more. -37- (34) (34) 1221102 It is more appropriate to set it to 4 or more. However, the beam points 9 1 a · 9 1 c shown in FIG. 13 are elliptical because they are beam points of a laser beam incident on the substrate obliquely. In addition, the beam spot 9 1 b is a beam spot that is a laser beam that is perpendicularly incident on the substrate and is circular. In this way, the incident angle varies with the incident position of the laser beam, so the beam spot shape on the substrate will be different. The processed hole openings are oval if the beam spot is oval, or circular if they are circular. However, there are cases where it is desired to form the hole openings in the same shape (for example, circular) regardless of the position. Next, referring to Fig. 17, the laser processing apparatus according to the fourth embodiment, in which the beam spot shape can be corrected corresponding to the incident position, will be described. The laser processing device shown in FIG. 17 is an addition to the laser processing device shown in FIG. 12 in addition to an aperture tilting mechanism 60 a capable of rotating the aperture 5 a around an axis perpendicular to the optical axis of the laser beam, and the aperture 5 a Aperture rotation mechanism 6 a rotating around an axis parallel to the optical axis of the laser beam. Also, the 'aperture rotation mechanism 6 1 a is the same mechanism as the mask rotation mechanism for rotating the mask provided by the laser processing apparatus described later with reference to FIG. 22A', and can rotate the aperture 5 a to the optical axis of the laser beam. Around the parallel axis. The aperture tilting mechanism 60a and the aperture rotating mechanism 6 1 a synchronize with the movement of the electromagnetic scanner 7 according to the control signals sent by the controller 1 1, respectively, while changing the aperture 5 a and the axis perpendicular to the optical axis of the laser beam. Inclination angle 'and the rotation angle around the axis parallel to the optical axis of the laser beam. Η Compare the cross-sectional shape of the beam on the substrate surface when the laser beam is incident obliquely on the surface of the substrate and the cross-sectional shape of the beam perpendicular to the optical axis. The beam cross-sectional shape on the substrate surface -38- (35) 1221102 is a shape in which the beam cross-sectional shape perpendicular to the optical axis is stretched along the substrate surface and in the direction of the line of intersection with the incident surface. For example, when a laser beam with a circular cross section is incident obliquely on the substrate surface, the beam cross section of the substrate surface is a long 憜 circle t 沿 along the direction of the intersection of the substrate surface and the incident surface. The larger the beam profile of the substrate surface becomes, the longer the shape is along the cross line direction.

因此,將垂直於光軸之剖面被整形爲長軸與短軸比適 當的橢圓之雷射光束,俾使其橢圓長軸方向垂直於射入面 地予以斜向射入於基板表面,料應能使基板表面之光束點 ¥圆形。 圖1 8 A爲將由孔徑傾斜機構60a沿垂直於雷射光束光 軸之軸周圍所旋轉孔徑5a,由孔徑傾斜機構60a旋轉軸 方向予以觀看之槪略顯示圖。自圖左方射入之雷射光束 〗b在孔徑5 a被整形剖面後由圖右方射出。Therefore, the cross-section perpendicular to the optical axis is shaped into an elliptical laser beam with an appropriate long-axis to short-axis ratio, and the long-axis direction of the ellipse is perpendicularly incident to the incident surface and incident on the substrate surface obliquely. Can make the beam spot on the surface of the substrate ¥ round. FIG. 18A is a schematic view showing the aperture 5a rotated by the aperture tilting mechanism 60a around an axis perpendicular to the optical axis of the laser beam, and viewed from the rotation axis direction of the aperture tilting mechanism 60a. The laser beam incident from the left side of the figure b is emitted from the right side of the figure after the aperture 5 a is shaped.

如圖1 8 B所示,被孔徑傾斜機構6 0 a旋轉之孔徑5 a 的圓形貫通孔,如以沿雷射光束光軸之視線觀看時,看似 備圓形。即,雷射光束剖面已被整形爲橢圓形。 又,孔徑5 a之圓形貫通孔相異的兩直徑所伸展之面 ,如與雷射光束光軸正交時,雷射光束剖面則被整形爲圓 jf ;。令孔徑5 a逐漸傾斜,隨著圓形貫通孔之旋轉中心軸 與雷射光束光軸所成角度變大,整形後之射束剖面的短軸 愈變短。如是,孔徑傾斜機構60a能改變整形後射束剖面 之縱橫比。 如圖1 8 C所示,再利用孔徑旋轉機構6 1 a將孔徑5 a -39- (36) (36)1221102 沿與雷射光束光軸呈平行之軸周圍予以旋轉。 雷射光束之光束點呈最小的位置(稱爲雷射光束焦點) 之射束剖面形狀爲橢圓狀。焦點之射束剖面的長軸方向, 即對應於孔徑5 a之貫通孔位置的射束剖面之短軸方向。 因此,令貫通孔位置的射束剖面之長軸方向一致於交 叉線方向地,以孔徑旋轉機構6 1 a旋轉孔徑5 a。如此, 可將基板上之光束點形狀,不管任何位置均保持爲圓形 又,雖就不需要把孔徑5 a之貫通孔成像於基板表面 的聚光法加工予以說明,惟在進行使貫通孔之像在基板表 面成像的遮罩投影法加工時,亦能補正基板上之光束點形 狀。遮罩投影法時,基板表面上所形成貫通孔之像的長軸 方向,即對應於遮罩之貫通孔位置的射束剖面之長軸方向 〇 使具圓形貫通孔之遮罩,在雷射光束光軸之垂直軸周 圍予以傾斜卻相同。惟,再使遮罩旋轉於雷射光束光軸之 平行軸周圍時,則令射出貫通孔時之射束剖面的橢圓形短 軸方向一致於射入面與基板表面交叉線方向予以旋轉。 雖就貫通孔形狀爲圓時進行說明,但亦能補正由其他 形狀之貫通孔所整形之雷射光束的光束點形狀。 接著’參照圖1 9,以說明使用近接遮罩進行雷射加 工方法的第五實施例之雷射加工裝置。圖1 9所示雷射加 工裝置是在圖12所示雷射加工裝置追加近接遮罩63者。 近接遮罩6 3由近接遮罩保持機構64予以保持,與基 板1 2表面呈平行地被配置於基板1 2正上面。近接遮罩 -40- (37) (37)1221102 6 3被形成具有與欲加工於基板表面之形狀的相同形狀之 汕孔。近接遮罩6 3與基板1 2表面之距離(近接間隙)d g 叮由近接遮罩保持機構64予以調節。 擴張器3係將雷射光源1射出之雷射光束的射束直徑 膜人,而射出平行光之雷射光束。由擴張器3射出之雷射 汜束具有擴散角/3。以擴張器3將雷射光束的射束直徑擴 大例如〗0倍時,擴散角/3即被減少爲呈1 0分之一。藉擴 張器3可將雷射光束之擴散角予以調整。 由電磁掃描器7掃描近接遮罩6 3上同時,並進行照 W Vli射光束。雷射光束乃通過近接遮罩6 3之貫通孔射入 於沾板1 2,而加工基板1 2。貫通孔以外部分並不通過雷 时光束,基板1 2不被加工。如是,能將近接遮罩6 3所具 貫通孔之形狀予以轉印,在基板表面進行加工。 此時,雷射光束之射入位置雖變動,亦能抑制基板表 面之脈衝能量密度的變動,將物鏡6位置對應雷射光束之 射入於基板的位置予以移動,以進行照射雷射。又,雷射 汜源1亦可爲射出連續波雷射光束者。此時,應促成可抑 制基板表面之功率密度的變動。 且,欲進行高精度加工時,需將近接遮罩6 3所具貫 ㈧孔之形狀正確地轉印於基板。轉印之精度乃依存於照射 於近接間隙d g及近接遮罩6 3之雷射光束的擴散角。照射 於近接遮罩之雷射光束的擴散角可推想與通過擴張器時之 雷射光束的擴散角/3相同。 在圖2 0,就具T字狀貫通孔之近接遮罩,顯示轉印 -41 - (38)1221102 半円度依存於近接間隙及雷射光束之擴散角如何變化的模擬 結果。亦是將近接間隙及雷射光束之擴散角加以各種變化 時的T字狀貫通孔之像9 7以排列顯示。各圖式,愈被配 置於右側者其雷射光束之擴散角愈小,且愈被配置於下側 者其近接間隙愈小。As shown in Fig. 18B, the circular through hole with the aperture 5a rotated by the aperture tilting mechanism 60a looks like a circle when viewed along the line of sight of the optical axis of the laser beam. That is, the laser beam profile has been shaped into an oval shape. In addition, if the diameter of a circular through-hole with a diameter of 5 a is different from the diameter of the extended surface, if the optical axis of the laser beam is orthogonal, the laser beam profile is shaped into a circle jf;. The aperture 5 a is gradually inclined, and as the angle formed by the rotation central axis of the circular through hole and the optical axis of the laser beam becomes larger, the short axis of the beam profile after shaping becomes shorter. If so, the aperture tilt mechanism 60a can change the aspect ratio of the beam profile after shaping. As shown in FIG. 8C, the aperture rotation mechanism 6 1 a is used to rotate the aperture 5 a -39- (36) (36) 1221102 around an axis parallel to the optical axis of the laser beam. The cross-sectional shape of the laser beam with the smallest beam spot (called the focal point of the laser beam) is elliptical. The major axis direction of the beam cross section of the focal point is the minor axis direction of the beam cross section corresponding to the position of the through hole with the aperture 5 a. Therefore, the aperture axis rotation mechanism 6 1 a is used to rotate the aperture 5 a so that the long axis direction of the beam profile at the position of the through hole coincides with the cross-line direction. In this way, the shape of the beam spot on the substrate can be kept circular regardless of any position. Although it is not necessary to explain the concentrating process of imaging a through hole with an aperture of 5 a on the surface of the substrate, only the through hole is performed. When the image is processed by the mask projection method on the substrate surface, the beam spot shape on the substrate can also be corrected. In the mask projection method, the long-axis direction of the image of the through-hole formed on the surface of the substrate, that is, the long-axis direction of the beam cross section corresponding to the position of the through-hole of the mask. The beam axis is tilted around the vertical axis but the same. However, when the mask is rotated around the parallel axis of the laser beam optical axis, the elliptical minor axis direction of the beam cross section when exiting the through-hole is aligned with the direction of the intersection of the incident surface and the substrate surface and rotated. Although the case where the through-hole shape is circular will be described, the beam spot shape of a laser beam shaped by a through-hole of another shape can also be corrected. Next, referring to Fig. 19, a laser processing apparatus according to a fifth embodiment of a laser processing method using a proximity mask will be described. The laser processing apparatus shown in FIG. 19 is a method in which a proximity mask 63 is added to the laser processing apparatus shown in FIG. 12. The proximity mask 63 is held by the proximity mask holding mechanism 64, and is disposed directly above the substrate 12 in parallel with the surface of the substrate 12. Proximity mask -40- (37) (37) 1221102 6 3 A Shan hole having the same shape as the shape to be processed on the substrate surface is formed. The distance (proximity gap) d g between the proximity mask 63 and the surface of the substrate 12 is adjusted by the proximity mask holding mechanism 64. The expander 3 is a film of the beam diameter of the laser beam emitted from the laser light source 1, and emits a laser beam of parallel light. The laser beam emitted by the dilator 3 has a spread angle / 3. When the beam diameter of the laser beam is expanded by, for example, 0 times with the expander 3, the diffusion angle / 3 is reduced to 10 times. The spreader 3 can adjust the diffusion angle of the laser beam. The electromagnetic scanner 7 scans the proximity mask 63 at the same time, and irradiates the beam with V Vli. The laser beam is incident on the dipping plate 12 through the through hole of the close-up mask 63, and the substrate 12 is processed. The portion other than the through hole does not pass the lightning beam, and the substrate 12 is not processed. If so, the shape of the through-holes of the proximity mask 63 can be transferred and processed on the surface of the substrate. At this time, although the incident position of the laser beam changes, it is also possible to suppress the variation of the pulse energy density on the surface of the substrate, and move the position of the objective lens 6 corresponding to the incident position of the laser beam on the substrate to move the laser. In addition, the laser radon source 1 may be a person that emits a continuous wave laser beam. In this case, it is necessary to suppress variations in power density on the surface of the substrate. In addition, in order to perform high-precision processing, it is necessary to accurately transfer the shape of the through-holes in the proximity mask 63 to the substrate. The accuracy of the transfer depends on the diffusion angle of the laser beam irradiated on the proximity gap d g and the proximity mask 63. The spread angle of the laser beam irradiated on the close mask can be assumed to be the same as the spread angle of the laser beam when passing through the expander / 3. In Fig. 20, a close mask with a T-shaped through-hole is shown, showing the simulation results of how the half-degree of transfer -41-(38) 1221102 depends on the close gap and the diffusion angle of the laser beam. The T-shaped through-hole images 9 7 are also displayed in an array when the proximity gap and the diffusion angle of the laser beam are variously changed. In each drawing, the more the laser beam is arranged on the right side, the smaller the diffusion angle of the laser beam, and the lower it is, the closer the gap is.

像9 7之邊緣愈明確其轉印精度愈高。自圖式可知, 相问擴政角日寸’近接間隙愈大轉印精度愈劣化。又,相同 近接間隙時’擴散角愈大轉印精度愈劣化。近接間隙、擴 散角均愈小愈能提高轉印精度。 在圖2 1槪略顯示欲確保某轉印精度時,近接間隙與 雷射光束之擴散角非滿足不可之關係曲線圖。欲確保某轉 印精度時,近接間隙如較大,就非將擴散角設成較小不可 ,擴散角如較大,就非將近接間隙設成較小不可。The clearer the edges like 9 7 the better the transfer accuracy. As can be seen from the figure, the larger the contact gap is, the larger the proximity gap is, the worse the transfer accuracy is. In the same proximity gap, the larger the 'diffusion angle, the worse the transfer accuracy. The smaller the proximity gap and the divergence angle, the better the transfer accuracy. Fig. 21 shows the relationship between the proximity gap and the diffusion angle of the laser beam when the transfer accuracy is to be ensured. To ensure the accuracy of a certain transfer, if the proximity gap is large, it is necessary to set the diffusion angle to be small.

針對各種轉印精度,如預先求得如圖2 1所示近接間 隙與雷射光束之擴散角非滿足不可之關係,則在欲以所盼 轉印精度進行加工時,能簡便地選定近接間隙與擴散角。 使用近接遮罩之雷射加工方法,乃具有將近接間隙與 擴散角設定較小’以高轉印精度進行加工之優點。又,藉 在基板之被加工位置正上面配置近接遮罩之貫通孔予以進 行加工,而可獲得較高之定位精度。除了被加工位置以外 ,由於皆以近接遮罩覆蓋於基板表面,故尙有加工時基板 被切削所發生之飛散物,不易附著於基板表面之優點。 又,在進行以通過近接遮罩之貫通孔的雷射光束照射 基板之加工時,將雷射光束對於基板之射入位置的移動, -42- (39) (39)1221102 藉由電磁掃描器予以搖擺雷射光束之進行方向,而比起移 動裝載基板之XY方向平台以進行射入位置移動時,更能 謀圖加工之局速化。 其次,參照圖22A說明具有能振盪連續波雷射光束 之雷射先源的弟/、貫施例之雷射加工裝置。能振邊連續波 雷射光束之雷射光源〗係可使用例如能振盪連續波雷射光 束之半導體雷射。 自雷射光源1射出之雷射光束lbo乃射入於分光光學 系統6 5。分光光學系統6 5則將雷射光束1 b 0在某時區分 配爲沿某光軸進行之雷射光束1 b 1,在其他時區分配爲沿 其他光軸進行之雷射光束lb2。 分光光學系統6 5是含著半波長板6 5 a、顯示泡克爾效 果之光電元件6 5 b、偏光板6 5 c所構成。半波長板6 5 a將 雷射光源〗所射出雷射光束〗b0設成對於偏光板65c成爲 P波之線性偏振光。該P波即射入於光電元件65b。 光電元件65b係依據控制器1 1送出之契機信號sig, 旋轉雷射光束之偏振軸。光電元件6 5 b處在無施加電壓狀 態時,將所射入P波原樣予以射出。光電元件6 5 b處在施 加電壓狀態時,該光電元件6 5 b使P波之偏振面旋轉9 0 度。藉此,自光電元件6 5 b射出之雷射光束對偏光板6 5 c 成爲S波。 偏光板6 5 c使P波原樣透過,將S波予以反射。在偏 光板6 5 c反射之S波的雷射光束1 b 1則射入於成爲雷射光 束lbl終端之光束阻尼器66。而透過偏光板65c之P波 -43- (40) (40)1221102 的雷射光束I b2即射入於擴張器3。 由擴張器3擴大射束直徑,被形成爲平行光之雷射光 束1 b2乃射入於具矩形貫通孔之遮罩5。在此,以遮罩投 影法加工爲例說明之。亦即,使遮罩5之貫通孔成像於基 板1 2表面,而進行加工。 遮罩旋轉機構6 1係被使用爲促使遮罩5旋轉於與雷 射光束光軸呈平行之軸周圍。遮罩旋轉機構6 1含著例如 測角器所構成,依據控制器1 1所送出控制信號,以所盼 時序使遮罩旋轉所盼角度。遮罩旋轉機構6 1容後再詳述 。音圈機構9則使遮罩5之位置沿雷射光束進行方向予以 平行移動。 自遮罩5射出之雷射光束1 b2即由物鏡6所聚焦。音 圈機構1 〇乃使遮罩5之位置沿雷射光束進行方向平行移 動。由物鏡6射出之雷射光束通過電磁掃描器7後’射入 於基板1 2表面。 參照圖2 2 B以說明加工對象物之基板1 2。基底層1 1 〇 之表面上存在著轉印層]1 1。該轉印層1 1 I具有被加熱即 粘接於基底層1 1 〇表面之性質。 例如,將轉印層1 Π之一部分1 1 1 a藉照射雷射予以 粘接於基底層1 1 〇。且除去轉印層1 Π中之未被加熱部分 1 1 1 b時,在基底層1 1 0表面上僅殘留被加熱部分Π 1 a。 此爲類似在進行熱轉印式印刷時,墨水帶之被加熱部分的 墨水轉印於紙張。 回到圖22A繼續說明。XY方向平台8a被使用爲基 -44- (41) (41)1221102 板1 2之保持台。X Y方向平台8 a可使基板1 2在與基板 1 2表面呈平行之二維平面內移動。且藉控制器】1控制 X Y方向平台8 a,可使基板1 2以所盼時序移動至所盼位 置c 在此說明之雷射加工方法例,係將電磁掃描器7之X 方向用掃描器7 a及Y方向用掃描器7 b固定於可使電磁掃 描器7射出之雷射光束垂直射入於基板1 2的位置。藉以 X Y方向平台8 a移動基板1 2,而能使雷射光束對於基板 1 2之射入位置移動。 使用音圈機構9,1 0、能將遮罩5至物鏡6之光路徑長 度及物鏡6至基板1 2之雷射光束射入位置的光路徑長度 設定爲;可使遮罩5之貫通孔的像以所盼的成像倍率成像 於基板1 2表面。 參照圖2 3說明分光光學系統之控制方法。圖2 3爲契 機信號s i g、雷射光束1 b 0 , 1 b 1 , 1 b 2之一例示。在時刻t 0 開始射出雷射光束lbO。 時刻t 0至時刻t ],自控制器並不送出契機信號5 i g 。此間’光電元件未被施加電壓,由分光光學系統經常射 出雷射光束】b 2。雷射光束1 b ]卻未被射出。此間之雷射 光束lb2呈連續波。 時刻t 1至時刻t 2,同步與控制器週期性送出之契機 信號s i g,對於分光光學系統之光電元件施加電壓。 被送出契機信號sig期間,光電元件係呈施加電壓狀 態’雷射光束I b 0被分配爲雷射光束1 b〗。另,未被送出 -45- (42) (42)1221102 契機信號sig期間,光電元件呈未施加電壓狀態’雷射光 束]b 0被分配爲雷射光束1 b 2。於是’時刻t 1至時刻t 2 之雷射光束lb2乃成爲週期性反覆振盪與停止之雷射光束 c 就該間歇性射出之雷射光束1 b2,藉調節契機信號 s i g可將脈衝寬度w 1及週期w2設定爲任意之長度。例如 ,將脈衝寬度wl設爲1 0 // s〜數10 " s,將週期w2設爲 數 1 0 0 // s 〇 如是,分光光學系統未被輸入契機信號時,可獲得連 續性射出之雷射光束1 b 2,分光光學系統被間歇性輸入契 機信號時,可獲得間歇性射出之雷射光束1 b2。 且,連續性射出之雷射光束1 b2由於能連續性照射於 基板,對於例如形成線之加工(基地層上殘留線狀轉印層 之加工)較適宜。另,間歇性射出之雷射光束]b 2由於能 間歇性照射於基板,對於例如形成點之加工(基地層上殘 留點狀轉印層之加工)較適宜。 參照圖24A以說明線加工之方法。對於基扳1 2開始 照射雷射,以開始加工。加工開始時,首先,藉矩形光束 點9 3照射線1 〇 3 —端之全寬幅上的領域。然後,連續性 地照射雷射同時,令光束點移向線1〇3另一端地將χγ方 向平台向一方向予以移動。χγ方向平台之移動方向是平 行於矩形光束點9 3之某一邊。又,將基板上之光束點移 動方向以箭頭顯示之。 當光束點到達線1 03另一端時,即停止對基板之照射 -46- (43) 1221102 雷射而結束加工。如此,藉基板表面之線狀領域被照射 射予以加熱,而能在基底層表面形成以線狀殘留轉印層 線 1 0 3。 所形成線1 〇 3之外形,則呈其較長方向之邊緣平行 光束點93之某一邊,其軸向邊緣平行於與光束點93某 緣呈正交之邊緣的矩形狀。線1 0 3之寬度,乃等於與光 點93某邊緣呈正交之邊長。 茲參照圖24B,就點加工之方法加以說明。在點加 時’係對基板1 2間歇性地照射雷射光束同時,使X γ 向平台移動於一方向。XY方向平台之移動方向是平行 矩形光束點94a之某一邊(稱爲邊p)。 首先,第一脈衝之照射雷射開始時,由矩形光束 9 4 a予以照射點1 〇 4 a —端之全寬幅上的領域。由於X Y 向平台在移動,致該第一脈衝之照射雷射結束爲止,光 點即在基板上移動。在此,以箭頭顯示光束點之移動方 〇 如此,以照射雷射加熱基板表面之點狀領域,在基 層表面形成以點狀殘留轉印層之點1 04a。 以後同樣地,藉第二、三、四、五脈衝之照射雷射 別形成點 104b,104c,104d,104e。又,第二、三、四、 脈衝之照射開始時,光束點9 4 b , 9 4 c,9 4 d,9 4 e分別照射 基板表面領域,則與將光束點9 4 a所照射基板表面領域 XY方向平台移動方向予以平行移動之領域一致。各點 排列於與XY方向平台移動方向呈平行之線上。 雷 之 於 邊 束 工 方 於 點 方 束 向 底 分 五 之 沿 乃 -47- (44) (44)1221102 各點外形,係呈具有與光束點94a之邊p平行的邊, S與光束點94a之邊p正交的邊(稱爲邊q)平行之邊的矩 形狀。 各點之與XY方向平台移動方向呈正交之邊長乃相等 於邊q之長度,例如邊q之長度爲2 0 m時即呈2 0 " m c 各點之與XY方向平台移動方向呈平行之邊長,則依 存於光束點之邊Ρ長、ΧΥ方向平台之移動速度、脈衝之 照射時間(脈衝寬度)。 例如,假設光束點之邊ρ長爲1 2 # m、X Υ方向平台 之移動速度爲800mm / s、脈衝寬度爲10# s。由於在脈衝 寬度1 0 s間,χγ方向平台移動之距離(即基板移動距離 )爲8 v m,致與XY方向平台移動方向呈平行的點之邊長 ’成爲光束點之邊ρ長I2//m加上移動距離8//m的20 ji m。 鄰接點間之間距d是一致於脈衝之一週期間移動的距 離。例如,脈衝之週期爲3 7 5 # s、X Y方向平台之移動速 度爲800mm / s時,間距d爲300" m。 綜括以上,將光束點尺寸設定爲邊ρ長1 2 # m、邊ρ 長2 0 " m,以脈衝寬度1 〇 # s、週期3 7 5 # s振盪雷射光束 ,且使XY方向平台以 800mm/s移動時,能以 300//m 間距形成2 0 // m角之點。 且’有時亦有欲在基板上加工具各相異方向之多數線 的情形。惟,如將基板上之光束點方向予以固定原樣以形 -48- (45) 1221102 成方向相異之線時,卻會發生依存於線方向致 等之問題。 參照圖2 9,以說明如此狀況之一例。首 圖2 4 A所說明之方法予以形成線1 〇 9 & ^接著 束點之方向地予以形成具與線1 〇 9 a呈相異方丨 。在照射雷射開始時’將光束點9 9照射於線 且使X Y方向平台移動於線1 〇 9 b之較長方向 束點移動至線1 0 9 b其他一端,以形成線丨〇 9 b 如圖示’線1 0 9 a之寬度雖與光束點9 9長 等,但線1 09b之寬度不一定與該長邊之長度 無法將線1 〇 9 b之端邊形成爲與線較長方向呈 用圖2 2 A所示遮罩旋轉機構6 1,而能回避此種 Η 25爲可保ί寸具矩形貫通孔62之遮罩5 機構6 1槪略顯示圖。矩形貫通孔6 2之兩條對 之面是垂直於雷射光束之光軸。遮罩旋轉機構 通孔6 2之矩形對角線的交叉點爲中心,促使: 於與雷射光束光軸呈平行之軸周圍。 對應於遮罩5之旋轉,貫通孔62之像即ί 面內旋轉。且可使基板上貫通孔之矩形像的邊 內之任意方向呈平行。 如其次說明,爲改變所加工之線等的方向 基板上之雷射光束射入位置的移動方向之前, 機構6 1予以旋轉遮罩5。 參照圖2 6,以說明使用遮罩旋轉機構之 線寬度變化 先,藉參照 ’不改變光 句之線 1 0 9 b 1 0 9 b —端。 同時,令光 〇 邊之長度相 相等。又, 正交。藉使 :問題。 的遮罩旋轉 角線所伸展 6 1係以貫 莲罩5旋轉 E基板1 2表 與基板表面 ,可在改變 由遮罩旋轉 線加工方法 -49- (46) 1221102 。藉參照圖2 4 A所說明之方法予以形成線1 〇 3 a。且 洸束點93a長邊之長度與線103a之寬度相等,光 9 3 a短邊之方向與線1 〇 3 a之較長方法呈平行。 在開始加工具有與線1 〇 3 a相異方向的線1 〇 3 b之 由遮罩旋轉機構旋轉遮罩,令光束點93b之短邊平行 l〇3b之較長方向。且藉XY方向平台移動基板,促使 點照射線1 03b —端之全寬幅上。 開始雷射光束之照射’由寥照圖2 4 A所說明之 •X程’俾使X Y方向平台沿線1 0 3 b之較長方向移動 ’加以形成線1 〇 3 b。線1 0 3 b之寬度係與光束點9 3 b 之長度相等。又,線l〇3b之寬幅方向的邊與較長方 邊呈正交。 如此,乃能將各自具有不同方向之多數線形成爲 同之寬度。又,爲將具相異方向之多數點不予改變大 形狀予以形成,亦可使用遮罩旋轉機構。 在此雖說明,由週期性契機信號控制分光光學系 將雷射光束加以脈衝化之例’惟契機信號非週期性亦 。例如,欲以不等間距形成多數點時,可使用非週期 契機信號。又,雷射光束之脈衝寬度非一定亦可。對 形成點之尺寸等適當地設定就可。 藉改變基板上之光束點形狀或大小,則能調節線 度或點之大小等。而藉更換遮罩可改變光束點之形狀 小。且,藉改變成像倍率(縮小率)亦能改變光束點之 假設 束點 刖 , 於線 光束 同樣 同時 長邊 向之 呈相 小、 統, 無妨 性之 應所 之寬 或大 大小 -50- (47) (47)1221102 上述雖以基板表面殘留線狀或點狀之轉印層的加工爲 例加以說明,惟藉照射雷射在基板表面而掘鑿線狀或點狀 之加工亦可。 遮罩之貫通孔形狀並不限於矩形,對應欲形成之點或 線之形狀予以適當地選擇即可。 上述雖說明藉XY方向平台移動基板上之雷射光束射 入位置的例,惟射入位置亦能由電磁掃描器搖擺雷射光束 之進行方向加以移動。 繼之,參照圖27A說明具有兩台雷射光源,其中一 台雷射光源射出脈衝雷射光束,另一台雷射光源射出連續 波雷射光束之第七實施例的雷射加工裝置。 雷射光源1 a爲例如含有波長變換單元之Nd : YAG雷 射振盪器,可射出Nd : YAG雷射之第四高次諧波(波長 2 6 6nm)。脈衝寬度例如爲1 0ns。雷射光源1 a射出之脈衝 雷射光束乃射入於半波長板69a,被形成爲對於偏光板67 呈P波之線性偏振光。 雷射光源1 b爲例如半導體雷射振盪器,可射出波長 8 0 8nm之連續波雷射光束。雷射光源lb射出之連續波雷 射光束則射入於半波長板69b,被形成爲對於偏光板67 呈S波之線性偏振光。 自半波長板69a射出之脈衝雷射光束,係通過將射束 直徑予以擴大設成平行光之擴張器3 a與具有例如矩形貫 通孔之掩膜5,而以射入角4 5 °射入於偏光板6 7表面。 自半波長板69b射出之連續波雷射光束,則通過將射 -51 - (48) (48)1221102 束直徑卞以擴大設成平行光之擴張器3 b,被回折鏡6 8予 以反射,而以射入角4 5。射入於偏光板6 7背面。 偏光板6 7使P波之脈衝雷射光束通過,令S波之連 糸貝波雷射光束反射。而藉偏光板6 7,乃能使自雷射光源 1 a射出之脈衝雷射光束與自雷射光源1 b射出之連續波雷 射光束重疊於同一光軸上。 通過偏光板6 7之脈衝雷射光束與被偏光板6 7反射之 連續波雷射光束,即在物鏡6被聚焦,通過電磁掃描器7 射入於基板1 2。· 以基板1 2之保持台所使用之X Y方向平台8 a,能使 基板1 2移動於與基板1 2表面呈平行之二維平面內。藉控 制器1 1控制電磁掃描器7,而能在所盼之時序將基板1 2 移動至所盼的位置。 在此說明之雷射加工方法例,係將電磁掃描器7之X 方向用掃描器7a與Y方向用掃描器7b固定於電磁掃描器 7射出之雷射光束可垂直射入於基板1 2的位置。且藉以 XY方向平台8a移動基板12,而能使基板12之雷射光束 射入位置移動。 音圈機構9,1 0分別使遮罩5、物鏡6之位置,沿雷射 光源1 a所射出脈衝雷射光束之進行方向予以平行移動。 遮罩5之貫通孔的像,乃藉調節遮罩5及物鏡6之位置, 以所盼之成像倍率(縮小率)予以成像於基板1 2表面。 參照圖27B,就加工對象物之基板12說明之。基底 層120表面上形成有表層121。基底層120例如爲液晶顯 -52- (49) (49)1221102 示裝置之濾色片’是由聚醯亞胺系樹脂或丙烯酸系樹脂等 所成之厚度1 # m樹脂層。表層1 2 1爲例如厚度〇 . 5 “⑺ 之ITO膜。 藉照射雷射僅除去表層1 2 1時,由於基底層1 2 0比表 層1 2 1易於加工,致僅要加工表層1 2 1較爲困難。例如, 將雷射照射基板時,表層1 2 1未被直接加工,基底層1 2 〇 即因該基底層1 20所傳達之熱影響而爆發性地飛散,以致 會發生隨其表層1 2 1被刮掉之情狀。 本發明人,則發覺藉預熱基板後再予以照顧雷射,可 使僅加工表層121變爲較容易。於是在圖27Α所示雷射 加工裝置’由雷射光源1 b射出之連續波雷射光束預熱基 板後,再以雷射光源1 a射出之脈衝雷射光束進行孔穴等 之加工。 接著參照圖2 8 A〜2 8 C,以說明利用連續波雷射光束 對基板上之被加工點予以預熱後,再照射脈衝雷射光束予 以形成孔穴之方法一例。 如圖2 8 A所示,被連續波雷射光束(以圓形光束點9 5 表示)所照射基板12表面係劃定有被加工點 1 0 5 a,1 0 5 b,1 0 5 c。光束點9 5即位於連結被加工點1 〇 5 a〜 1 〇 5 c之直線上。且藉將X γ方向平台8 a與該直線平行予 以移動,可使被加工點1 〇 5 a〜1 0 5 c移向光束點9 5。 如圖28B所示,當被加工點105a到達光束點95端緣 時’連續波雷射光束乃照射被加工點1 〇 5 a開始供給預熱 -53- (50) (50)I2m〇2 如圖2 8 C所示,被加工點】0 5 a到達光束點9 5中心時 ,對光束點9 5中心進行照射一射擊脈衝雷射。將脈衝雷 射之光束點以光束點9 6顯示。 被加工點1 0 5 a則在自光束點9 5端緣移動至中心之間 被予以預熱。藉將脈衝雷射照射於被預熱之被加工點 1 〇 5 a,而能抑制基底層之被加工,在基板表層形成孔穴。 繼續使基板1 2移動’與被加工點1 〇 5 a同樣’亦在被 加工點1 0 5 b,1 0 5 c予以形成孔穴。 預熱所用連續波雷射光束之照射條件’則是例如將光 束點設成直徑2 0 m m之圓形狀’將基板表面之功率密度設 爲0 . 1 W / cm2。加工所用脈衝雷射光束之照射條件,是例 如將光束點設成直徑2 0 // m之正方形,將基板表面之脈 衝能量密度設爲〇·〗〜〇.4 J / cm2。 又,被加工點之預熱時間,卻略等於被加工點移動連 續波雷射光束之光束點半徑長分所需的時間。該時間,如 將光束點半徑設爲l〇mm、XY方向平台之移動速度設爲 8 0 0mm / s時,約爲0.13秒。藉將脈衝雷射照射於連續波 雷射光束之光束點中心’而雖將XY方向平台之移動方向 予以多樣變化,亦能整齊預熱時間容易進行加工。 照射連續波雷射賦予基板表面之熱,由於會傳達至基 底層,致所賦予預熱過多時連基底層亦加工。因此,預熱 之供給需要使基底層之溫度停留於避免基底層被加工之溫 度以下。例如,需要使基底層之溫度停留於基底層原材料 之融點以下。 -54- (51) (51)1221102 I Τ Ο膜雖對可見光呈透明,惟對於例如波長8 0 8 n m近 紅外線之吸收系數並不是零。因此能將該波長光使用於 I Τ Ο膜之預熱。如使用比I Τ Ο膜之吸收系數更大之波長( 例如1 064nm附近之波長)光,乃能期待預熱之效率提升。 上述雖說明將脈衝雷射光束與連續波雷射光束重疊於 同一光軸上以照射基板之例子,惟兩雷射光束非在同一光 軸上亦無妨。促使連續波雷射光束之光束點內部含有脈衝 雷射光束之光束點,將兩雷射光束照射於基板,即能在被 加工點到達連續波雷射光束之光束點端緣後再到達脈衝雷 射光束之光束點位置之間,對被加工點供給預熱。 惟,爲賦予預熱,需使被加工點通過連續波雷射光束 之光束點內部後,再到達脈衝雷射光束之照射位置。因此 ,需使脈衝雷射光束之照射位置避免與被加工點接觸於連 續波雷射光束之光束點外周時分的該被加工點位置呈一致 〇 上述雖說明形成孔穴之例,然連續地形成多數孔穴, 予以形成溝槽亦可。 上述雖說明由XY方向平台移動基板上之雷射光束射 入位置的例,惟射入位置亦能藉電磁掃描器搖擺雷射光束 進行方向予以移動。 以上,雖沿著實施例說明本發明,但並非限定於該等 。例如’可作各種變更、改良、組合等,當然是同業者所 自明者。 (52) (52)1221102 【圖式簡單說明】 圖〗爲可實行本發明第一實施例之雷射加工方法的雷 射加工裝置槪略圖。 圖2爲可實行本發明第一實施例之雷射加工方法的雷 射加工裝置之雷射光束光路徑槪略顯示圖。 圖3 A及圖3 B爲由於雷射光束照射所加工之基板槪 略平面顯示圖。 圖4A爲遮罩之貫通孔一例示圖,圖4B爲圖4A所示 貫通孔在基板上成像時之基板所開鑿的孔穴槪略顯示圖。 圖5 A爲雷射光源所射出脈衝雷射光束剖面之每一脈 衝能量密度的槪略顯示曲線圖,圖5 B爲由圓錐光學系統 變換脈衝能量密度分佈之脈衝雷射光束剖面的每一脈衝能 量密度之槪略顯示曲線圖,圖5 C爲由具有圖5 B所示脈 衝能量密度分佈之脈衝雷射光束予以加工的孔穴槪略剖面 圖。 圖6爲可實行第一實施例之變形例的雷射加工方法之 雷射加工裝置槪略圖。 圖7爲光路徑調節機構槪略顯示圖。 圖8A及圖8B爲搬運機構槪略顯示圖。 圖9爲習知雷射割片裝置槪略圖。 圖1 0 A及圖1 0B爲由習知雷射割片裝置予以加工之 基板槪略平面圖。 圖1 1爲由習知雷射割片裝置予以加工之基板槪略剖 面圖 -56- (53)1221102 圖1 2 A爲可實行第二實施例之雷射加工方法的雷射 加工裝置槪略圖,圖1 2 B爲可實行第二實施例之變形例的 雷射加工方法之雷射加工裝置槪略圖。 圖1 3爲可實行本發明第二實施例之雷射加工方法的 雷射加工裝置之雷射光束光路徑槪略顯示圖。 圖1 4爲可實行第二實施例之變形例的雷射加工方法 之雷射加工裝置的雷射光束光路徑槪略顯示圖。For various transfer accuracy, if the relationship between the proximity gap and the diffusion angle of the laser beam as shown in Figure 21 is obtained in advance, the proximity gap can be easily selected when processing is performed with the desired transfer accuracy With diffusion angle. The laser processing method using the proximity mask has the advantage of setting the proximity gap and the diffusion angle to be relatively small 'for processing with high transfer accuracy. In addition, by arranging the through hole of the close mask directly above the processing position of the substrate for processing, high positioning accuracy can be obtained. Except for the location to be processed, the surface of the substrate is covered with a close mask, so there is an advantage that the scattered objects generated by the substrate being cut during processing are not easily attached to the surface of the substrate. In the process of irradiating a substrate with a laser beam passing through a through hole of a close mask, the laser beam is moved to the substrate's incident position. -42- (39) (39) 1221102 by an electromagnetic scanner It is possible to speed up the processing of the laser beam by swaying the direction of the laser beam, compared to when moving the stage in the XY direction of the loading substrate to move the incident position. Next, a laser processing apparatus having a laser source that can oscillate a continuous wave laser beam will be described with reference to Fig. 22A. As the laser light source capable of vibrating a continuous wave laser beam, for example, a semiconductor laser capable of oscillating a continuous wave laser beam can be used. The laser beam lbo emitted from the laser light source 1 is incident on the spectroscopic optical system 65. The spectroscopic optical system 65 divides the laser beam 1 b 0 into a laser beam 1 b 1 along a certain optical axis at a certain time, and allocates it as a laser beam lb 2 along the other optical axis in other time zones. The spectroscopic optical system 65 is composed of a half-wavelength plate 6 5 a, a photovoltaic element 6 5 b showing a Pockel effect, and a polarizing plate 6 5 c. The half-wavelength plate 6 5 a sets the laser light beam [b0] emitted by the laser light source [b0] as a linearly polarized light that becomes a P wave for the polarizing plate 65c. This P wave is incident on the photovoltaic element 65b. The photoelectric element 65b rotates the polarization axis of the laser beam according to the opportunity signal sig sent by the controller 11. When the photovoltaic element 6 5 b is in a state where no voltage is applied, the incident P wave is emitted as it is. When the photovoltaic element 65b is under a voltage application state, the photovoltaic element 65b rotates the polarization plane of the P wave by 90 degrees. Thereby, the laser beam emitted from the photoelectric element 6 5 b becomes an S-wave to the polarizing plate 6 5 c. The polarizing plate 6 5 c transmits the P wave as it is, and reflects the S wave. The laser beam 1 b 1 of the S wave reflected on the polarizing plate 6 5 c is incident on a beam damper 66 which becomes the end of the laser beam lbl. The laser beam I b2 of the P wave -43- (40) (40) 1221102 transmitted through the polarizing plate 65c enters the expander 3. The beam diameter is enlarged by the expander 3, and a laser beam 1 b2 formed as parallel light is incident on a mask 5 having a rectangular through-hole. Here, a description will be given by taking a mask projection method as an example. That is, the through holes of the mask 5 are imaged on the surface of the substrate 12 and processed. The mask rotation mechanism 61 is used to cause the mask 5 to rotate around an axis parallel to the optical axis of the laser beam. The mask rotation mechanism 61 includes, for example, a goniometer, and rotates the mask at a desired timing according to a control signal sent from the controller 11. The mask rotation mechanism 61 will be described in detail later. The voice coil mechanism 9 moves the position of the mask 5 in parallel along the direction of the laser beam. The laser beam 1 b2 emitted from the mask 5 is focused by the objective lens 6. The voice coil mechanism 10 moves the position of the mask 5 in parallel in the direction of the laser beam. The laser beam emitted from the objective lens 6 passes through the electromagnetic scanner 7 and is incident on the surface of the substrate 12. The substrate 12 of the object to be processed will be described with reference to FIGS. 2 and 2B. A transfer layer is present on the surface of the base layer 1 1 0] 1 1. The transfer layer 1 1 I has a property of being adhered to the surface of the base layer 1 10 by being heated. For example, a part 1 1 1 a of the transfer layer 1 Π is bonded to the base layer 1 1 0 by irradiating a laser. When the unheated portion 1 1 1 b in the transfer layer 1 Π is removed, only the heated portion Π 1 a remains on the surface of the base layer 1 10. This is similar to the case where the heated portion of the ink ribbon is transferred to the paper during thermal transfer printing. Returning to FIG. 22A, the explanation is continued. The XY-direction stage 8a is used as a holding table for the base -44- (41) (41) 1221102 plate 12. The X Y direction stage 8 a can move the substrate 12 in a two-dimensional plane parallel to the surface of the substrate 12. And by the controller] 1 controls the XY direction stage 8 a, the substrate 12 can be moved to the desired position at the desired timing c. The laser processing method example described here is the scanner in the X direction of the electromagnetic scanner 7 The 7 a and Y direction scanners 7 b are fixed at positions where the laser beam emitted from the electromagnetic scanner 7 can be incident on the substrate 12 vertically. By moving the substrate 12 in the X Y direction platform 8a, the laser beam can be moved to the incident position of the substrate 12. Using the voice coil mechanism 9, 10, the light path length of the mask 5 to the objective lens 6 and the light path length of the laser beam incident position of the objective lens 6 to the substrate 12 can be set to; the through hole of the mask 5 can be set The image is formed on the surface of the substrate 12 at the desired imaging magnification. A control method of the spectroscopic optical system will be described with reference to FIGS. Fig. 23 is an example of an opportunity signal s i g and a laser beam 1 b 0, 1 b 1, 1 b 2. The laser beam lbO starts to be emitted at time t 0. From time t 0 to time t], the self-controller does not send the opportunity signal 5 i g. During this period, the photovoltaic element is not applied with a voltage, and a laser beam is often emitted by the spectroscopic optical system] b 2. The laser beam 1 b] is not emitted. The laser beam lb2 here is a continuous wave. From time t 1 to time t 2, the timing signal s i g sent by the controller periodically and synchronously is applied to the photoelectric element of the spectroscopic optical system. While the opportunity signal sig is being sent out, the photovoltaic element system is in a voltage-applied state 'and the laser beam I b 0 is allocated as the laser beam 1 b. In addition, during the period when the -45- (42) (42) 1221102 opportunity signal sig was not sent, the photovoltaic element was in a state where no voltage was applied, 'laser beam] b 0 was assigned as laser beam 1 b 2. Therefore, the laser beam lb2 from time t 1 to time t 2 becomes the laser beam c that periodically oscillates and stops repeatedly. The intermittently emitted laser beam 1 b2 can adjust the pulse width w 1 by adjusting the signal sig. And the period w2 is set to an arbitrary length. For example, if the pulse width wl is set to 1 0 // s to number 10 " s, and the period w2 is set to number 1 0 0 // s 〇 If yes, continuous emission can be obtained when the spectroscopic optical system is not input with the opportunity signal. The laser beam 1 b 2 of the laser beam 1 is intermittently obtained when the spectroscopic optical system is intermittently input with an opportunity signal. In addition, since the laser beam 1 b2 emitted continuously can be irradiated to the substrate continuously, it is suitable for, for example, a process for forming a line (a process in which a linear transfer layer remains on the base layer). In addition, the intermittently emitted laser beam] b 2 can be irradiated to the substrate intermittently, and is suitable for, for example, processing for forming dots (processing for leaving a dot-like transfer layer on a base layer). A method of wire processing will be described with reference to FIG. 24A. For the base plate 12, laser irradiation was started to start processing. At the start of processing, first, a rectangular beam spot 93 is used to illuminate the area on the full width of the line 103. Then, while continuously irradiating the laser, the beam spot is moved to the other end of the line 103 and the χγ-direction platform is moved in one direction. The moving direction of the platform in the χγ direction is parallel to one side of the rectangular beam spot 93. The direction of movement of the beam spot on the substrate is indicated by arrows. When the beam spot reaches the other end of the line 103, the irradiation of the substrate is stopped -46- (43) 1221102 Laser and the processing is ended. In this way, by irradiating and heating a linear area on the substrate surface, a linear residual transfer layer line 103 can be formed on the surface of the base layer. The formed shape of the line 103 is a rectangle whose longer edge is parallel to one side of the beam spot 93 and whose axial edge is parallel to an edge orthogonal to an edge of the beam spot 93. The width of the line 103 is equal to the length of a side orthogonal to an edge of the light spot 93. A method of point processing will be described with reference to FIG. 24B. When the point is added, the substrate 12 is irradiated with the laser beam intermittently, and X γ is moved in one direction toward the platform. The moving direction of the XY direction platform is one side (referred to as side p) of the parallel rectangular beam spot 94a. First, at the beginning of the first pulse of irradiating laser, a rectangular light beam 9 4 a irradiates the area on the full width of the point 1 0 4 a -end. Since the X Y is moving toward the platform, the light spot moves on the substrate until the laser pulse of the first pulse ends. Here, the movement of the beam spot is shown by arrows. In this way, the spot-shaped area of the substrate surface is irradiated with the laser to form a spot 104a on the surface of the base layer in the form of a dot-shaped residual transfer layer. In the same way, the points 104b, 104c, 104d, and 104e are formed by irradiating the laser with the second, third, fourth, and fifth pulses. In addition, when the second, third, fourth, and pulse irradiations are started, the beam spots 9 4 b, 9 4 c, 9 4 d, and 9 4 e irradiate the substrate surface area, respectively, and the substrate surface is irradiated with the beam spot 9 4 a. The areas in which the platform moves in the XY direction are parallel to each other. The points are arranged on a line parallel to the moving direction of the platform in the XY direction. The edge of Lei Zhiyu's side beam is divided into five points at the point of the beam. -47- (44) (44) 1221102 The shape of each point is a side parallel to the side p of the beam point 94a, and S and the beam point. A rectangular shape in which the sides p of 94a are orthogonal to each other (referred to as side q) and the sides are parallel. The length of the side of each point that is orthogonal to the moving direction of the platform in the XY direction is equal to the length of the side q. For example, when the length of the side q is 20 m, it is 2 0 " mc The length of the parallel sides depends on the length of the side P of the beam spot, the moving speed of the platform in the XY direction, and the pulse irradiation time (pulse width). For example, suppose that the length of the edge ρ of the beam spot is 1 2 # m, the moving speed of the platform in the X Υ direction is 800 mm / s, and the pulse width is 10 # s. As the pulse width is 10 s, the distance of the platform movement in the χγ direction (that is, the substrate movement distance) is 8 vm, so that the side length of a point parallel to the platform movement direction in the XY direction is the side of the beam spot, and the length is I2 // m plus 20 ji m with a travel distance of 8 // m. The distance d between adjacent points is a distance consistent with the movement during one cycle of the pulse. For example, when the period of the pulse is 3 7 5 # s and the moving speed of the platform in the X and Y directions is 800 mm / s, the pitch d is 300 " m. To sum up, set the beam spot size to the side ρ length 1 2 # m, the side ρ length 2 0 " m, oscillate the laser beam with a pulse width 1 〇 # s, a period 3 7 5 # s, and make the XY direction When the platform moves at 800mm / s, it can form a point with an angle of 20 / m at a distance of 300 // m. In addition, there are cases where a plurality of lines in different directions of the tool are added to the substrate. However, if the direction of the beam spot on the substrate is fixed as -48- (45) 1221102 to form lines with different directions, problems such as dependence on the line direction occur. An example of such a situation will be described with reference to FIGS. The method illustrated in FIG. 24A is used to form a line 109 & ^ followed by the direction of the beam spot to be formed with a line different from the line 109a. At the beginning of the irradiation laser, irradiate the beam spot 9 9 on the line and move the platform in the XY direction to the longer direction of the line 1 09b to the other end of the line 1 0 9 b to form a line 9b As shown in the figure, although the width of line 1 0 9 a is equal to the length of the beam spot 9 9, the width of line 1 09 b may not be the same as the length of the long side. The end of line 1 0 9 b cannot be formed to be longer than the line. The direction is shown by the mask rotation mechanism 61 shown in FIG. 2A, and this type of mask can be avoided. 25 is a schematic view of the mask 5 mechanism 6 1 with a rectangular through hole 62. The two opposite sides of the rectangular through hole 62 are perpendicular to the optical axis of the laser beam. Mask rotation mechanism The intersection of the rectangular diagonals of the through hole 62 is used as the center, which urges: around an axis parallel to the optical axis of the laser beam. Corresponding to the rotation of the mask 5, the image of the through hole 62 is rotated in the plane. In addition, any direction within the rectangular image of the through hole on the substrate can be made parallel. As described next, the mechanism 61 rotates the mask 5 before changing the direction of the laser beam incident position on the substrate in order to change the direction of the processed line and the like. Referring to FIG. 26, to explain the change of the line width using the mask rotation mechanism. First, by referring to the 'not changing the line of light sentence 1 0 9 b 1 0 9 b-end. At the same time, make the lengths of the sides of the light equal. Again, orthogonal. If: Question. The rotation of the mask is extended by the angle line 6 1 through the lotus cover 5 to rotate the E substrate 1 2 and the surface of the substrate, which can be changed by the mask rotation line processing method -49- (46) 1221102. The line 10a is formed by the method described with reference to Fig. 24A. And the length of the long side of the beam spot 93a is equal to the width of the line 103a, and the direction of the short side of the light 93a is parallel to the longer method of the line 103a. At the beginning of processing the line 1 0 3 b having a direction different from the line 1 0 3 a, the mask is rotated by the mask rotating mechanism so that the short side of the beam spot 93b is parallel to the longer direction of 103b. And the substrate is moved by the XY direction platform, so that the point irradiation line 103b is on the full width of the end. Beginning of the laser beam irradiation 'is explained as shown in Fig. 2 4A. • The X-path' moves the platform in the X and Y direction along the longer direction of the line 10 3 b 'and forms the line 103 b. The width of the line 1 0 3 b is equal to the length of the beam spot 9 3 b. In addition, the side in the width direction of the line 103b is orthogonal to the longer side. In this way, a plurality of lines each having a different direction can be formed to have the same width. In order to form a plurality of points having different directions without changing the large shape, a mask rotation mechanism may be used. Although it is explained here that the spectroscopic optical system is controlled by the periodic opportunity signal to exemplify the pulse of the laser beam ', the opportunity signal is also non-periodic. For example, when you want to form a majority of points at unequal intervals, you can use aperiodic opportunity signals. Moreover, the pulse width of the laser beam may not be fixed. The size and the like of the formation points may be appropriately set. By changing the shape or size of the beam spot on the substrate, the line or dot size can be adjusted. The shape of the beam spot can be changed by changing the mask. Moreover, by changing the imaging magnification (reduction rate), the hypothetical beam spot 刖 can also be changed, and the line beam is also small and systematic at the same time in the long side. The width or large size of the beam should be -50- ( 47) (47) 1221102 Although the above description is made by taking the processing of a linear or dot-shaped transfer layer remaining on the substrate surface as an example, it is also possible to dig a linear or dot-shaped process by irradiating a laser on the surface of the substrate. The shape of the through hole of the mask is not limited to a rectangle, and the shape of the point or line to be formed may be appropriately selected. Although the above description is an example of moving the laser beam incident position on the substrate by the XY direction stage, the incident position can also be moved by the electromagnetic scanner to swing the laser beam forward direction. Next, a seventh embodiment of a laser processing apparatus having two laser light sources, one of which emits a pulsed laser beam and the other laser source which emits a continuous wave laser beam, will be described with reference to FIG. 27A. The laser light source 1 a is, for example, an Nd: YAG laser oscillator including a wavelength conversion unit, and can emit a fourth harmonic (wavelength 266 nm) of the Nd: YAG laser. The pulse width is, for example, 10 ns. Pulses emitted by the laser light source 1 a The laser beam is incident on the half-wavelength plate 69 a and is formed as linearly polarized light having a P wave to the polarizing plate 67. The laser light source 1 b is, for example, a semiconductor laser oscillator, and can emit a continuous wave laser beam with a wavelength of 808 nm. The continuous wave laser beam emitted from the laser light source lb is incident on the half-wavelength plate 69b, and is formed as linearly polarized light having an S wave to the polarizing plate 67. The pulsed laser beam emitted from the half-wavelength plate 69a is expanded by expanding the beam diameter into parallel light 3a and a mask 5 having, for example, a rectangular through-hole, and is incident at an incidence angle of 45 ° On the surface of the polarizer 6 7. The continuous-wave laser beam emitted from the half-wavelength plate 69b is reflected by a folding mirror 6 8 by expanding a beam diameter -51-(48) (48) 1221102 to expand the expander 3 b set as parallel light. And with an injection angle of 4 5. It is incident on the back of the polarizing plate 67. The polarizing plate 67 passes the pulsed laser beam of the P wave, and reflects the continuous wave of the S-wave laser beam. By using the polarizing plate 6 7, the pulsed laser beam emitted from the laser light source 1 a and the continuous wave laser beam emitted from the laser light source 1 b can be overlapped on the same optical axis. The pulsed laser beam passing through the polarizing plate 67 and the continuous wave laser beam reflected by the polarizing plate 67 are focused on the objective lens 6 and incident on the substrate 12 through the electromagnetic scanner 7. · The X Y direction stage 8 a used by the holding table of the substrate 12 can move the substrate 12 in a two-dimensional plane parallel to the surface of the substrate 12. The controller 11 controls the electromagnetic scanner 7 so that the substrate 1 2 can be moved to a desired position at a desired timing. The laser processing method described here is an example in which the X-direction scanner 7a and the Y-direction scanner 7b of the electromagnetic scanner 7 are fixed to the laser beam emitted from the electromagnetic scanner 7. position. By moving the substrate 12 with the XY-direction stage 8a, the laser beam incident position of the substrate 12 can be moved. The voice coil mechanisms 9, 10 respectively move the positions of the mask 5 and the objective lens 6 in parallel along the traveling direction of the pulsed laser beam emitted by the laser light source 1a. The image of the through hole of the mask 5 is formed on the surface of the substrate 12 by adjusting the positions of the mask 5 and the objective lens 6 at the desired imaging magnification (reduction rate). The substrate 12 to be processed will be described with reference to FIG. 27B. A surface layer 121 is formed on the surface of the base layer 120. The base layer 120 is, for example, a color filter of a liquid crystal display device (52) (49) (49) 1221102 display device, which is a resin layer having a thickness of 1 #m and formed of a polyimide resin or an acrylic resin. The surface layer 1 21 is, for example, an ITO film having a thickness of 0.5 ". When only the surface layer 1 2 1 is removed by irradiating a laser, the base layer 1 2 0 is easier to process than the surface layer 1 2 1, so that only the surface layer 1 2 1 is processed. More difficult. For example, when a laser is irradiated to the substrate, the surface layer 1 2 1 is not directly processed, and the base layer 1 2 0 is explosively scattered due to the thermal influence transmitted by the base layer 120. The surface layer 1 2 1 is scraped off. The inventor found that by preheating the substrate and then taking care of the laser, it is easier to process only the surface layer 121. Therefore, the laser processing apparatus shown in FIG. The continuous wave laser beam emitted from the laser light source 1 b preheats the substrate, and then uses the pulsed laser beam emitted from the laser light source 1 a to process the holes and the like. Next, referring to FIGS. 2 8 A to 2 8 C, the use is explained. An example of a method in which a continuous wave laser beam preheats a processed point on a substrate and then irradiates a pulsed laser beam to form a cavity. As shown in Figure 2 8A, the continuous wave laser beam (with a circular beam spot) 9 5) The surface of the irradiated substrate 12 is delineated with processing points 1 0 5 a, 1 0 5 b, 1 0 5 c. The beam spot 95 is located on a straight line connecting the processed points 1 0 5 a to 1 0 5 c. And the X γ direction platform 8 a is moved in parallel with the straight line , The processed point 1 〇5 a ~ 1 0 5 c can be moved to the beam point 95. As shown in FIG. 28B, when the processed point 105a reaches the edge of the beam point 95, the continuous wave laser beam is irradiated and processed. Point 1 〇5 a begins to supply preheating -53- (50) (50) I2m〇2 As shown in Figure 2 8 C, the processed point] 0 5 a reaches the center of beam point 9 5 when it reaches the center of beam point 9 5 A shot pulse laser is irradiated. The beam spot of the pulse laser is displayed as beam spot 9 6. The processed point 1 0 5 a is preheated between the end edge of the beam spot 9 5 and the center. By borrowing The pulsed laser is irradiated on the pre-heated processing point 105a, which can suppress the processing of the base layer and form holes in the surface layer of the substrate. Moving the substrate 12 2 'same as the processing point 105a' also Holes are formed at the processed points 1 0 5 b and 1 0 5 c. The irradiation conditions of the continuous wave laser beam used for preheating is to set the beam spot to a circle with a diameter of 20 mm, for example. The shape sets the power density on the substrate surface to 0.1 W / cm2. The irradiation conditions of the pulsed laser beam used for processing are, for example, setting the beam spot to a square with a diameter of 2 0 // m, and the pulse energy density on the substrate surface. It is set to 〇 · 〖~ 0.4 J / cm2. In addition, the preheating time of the processed point is slightly equal to the time required for the processed point to move the long point of the continuous beam laser beam's beam radius. When the beam spot radius is set to 10 mm and the movement speed of the XY direction stage is set to 800 mm / s, it is about 0.13 seconds. By irradiating a pulsed laser to the center of the beam spot of the continuous wave laser beam ', although the movement direction of the XY direction stage is variously changed, it can be easily processed with a neat warm-up time. The heat imparted to the substrate surface by the continuous wave laser is transmitted to the substrate, so that even if the preheating is too much, the substrate is also processed. Therefore, the supply of preheating needs to keep the temperature of the base layer below the temperature that prevents the base layer from being processed. For example, it is necessary to keep the temperature of the base layer below the melting point of the raw materials of the base layer. -54- (51) (51) 1221102 The ITO film is transparent to visible light, but its absorption coefficient is not zero for near-infrared rays with a wavelength of 8 0 8 m, for example. Therefore, this wavelength of light can be used for the preheating of the I TO film. If light with a wavelength greater than the absorption coefficient of the ITO film (for example, a wavelength near 1 064 nm) is used, the efficiency of preheating can be expected to increase. Although the above description illustrates an example in which a pulsed laser beam and a continuous wave laser beam are superimposed on the same optical axis to irradiate the substrate, the two laser beams may not be on the same optical axis. Prompt the beam point of the continuous wave laser beam to contain the beam point of the pulsed laser beam, and irradiate the two laser beams to the substrate, that is, the processed point can reach the pulsed laser beam after reaching the edge of the beam point of the continuous wave laser beam. Preheating is provided to the processed point between the beam spot positions of the beam. However, in order to provide preheating, it is necessary to pass the processed point through the inside of the beam spot of the continuous wave laser beam, and then reach the irradiation position of the pulse laser beam. Therefore, it is necessary to avoid that the irradiation position of the pulsed laser beam is consistent with the position of the processed point when the processed point is in contact with the outer periphery of the beam point of the continuous wave laser beam. Although the above example describes the formation of the cavity, it is continuously formed. Most holes can be grooved. Although the above describes the example where the laser beam incident position on the substrate is moved by the XY direction stage, the incident position can also be moved by the electromagnetic scanner to swing the laser beam in the direction. Although the present invention has been described along the embodiments, it is not limited to these. For example, 'can make various changes, improvements, combinations, etc., of course, it is obvious to those in the industry. (52) (52) 1221102 [Brief Description of the Drawings] The figure is a schematic view of a laser processing device that can implement the laser processing method of the first embodiment of the present invention. FIG. 2 is a schematic view showing a laser beam light path of a laser processing apparatus capable of implementing the laser processing method according to the first embodiment of the present invention. 3A and 3B are schematic plan views of a substrate processed by laser beam irradiation. FIG. 4A is an illustration of an example of a through hole of a mask, and FIG. 4B is a schematic view of a hole cut out by the substrate when the through hole shown in FIG. Fig. 5 A is a schematic diagram showing the energy density of each pulse of the pulse laser beam profile emitted by the laser light source, and Fig. 5 B is each pulse of the pulse laser beam profile of the pulse energy density profile transformed by the conical optical system. A schematic diagram of the energy density is shown. FIG. 5C is a schematic sectional view of a hole processed by a pulsed laser beam having a pulse energy density distribution shown in FIG. 5B. Fig. 6 is a schematic view of a laser processing apparatus capable of implementing a laser processing method according to a modification of the first embodiment. FIG. 7 is a schematic display diagram of a light path adjustment mechanism. 8A and 8B are schematic diagrams showing a transport mechanism. FIG. 9 is a schematic view of a conventional laser cutting device. 10A and 10B are schematic plan views of a substrate processed by a conventional laser cutting device. Figure 11 is a schematic cross-sectional view of a substrate processed by a conventional laser cutting device -56- (53) 1221102 Figure 1 2A is a schematic view of a laser processing device capable of implementing the laser processing method of the second embodiment FIG. 1B is a schematic view of a laser processing apparatus capable of implementing a laser processing method according to a modification of the second embodiment. Fig. 13 is a schematic view showing a laser beam light path of a laser processing apparatus capable of performing a laser processing method according to a second embodiment of the present invention. Fig. 14 is a schematic view showing a laser beam light path of a laser processing apparatus capable of implementing a laser processing method according to a modification of the second embodiment.

圖1 5 A爲可實行第三實施例之雷射加工方法的雷射 加工裝置槪略圖,圖1 5 B爲一次聚光鏡之其他構成例槪略 顯示圖。 圖1 6爲二次聚光鏡之構成例槪略顯示圖。 圖1 7爲可實行第四實施例之雷射加工方法的雷射加 工裝置槪略圖。FIG. 15A is a schematic view of a laser processing apparatus capable of implementing the laser processing method of the third embodiment, and FIG. 15B is a schematic view of another configuration example of a primary condenser. FIG. 16 is a schematic view showing a configuration example of a secondary condenser lens. Fig. 17 is a schematic view of a laser processing apparatus capable of implementing the laser processing method of the fourth embodiment.

圖1 8 A爲將被孔徑傾斜機構加以旋轉之孔徑,自孔 徑傾斜機構之旋轉軸方向觀看的槪略圖,圖1 8 B爲將被孔 徑傾斜機構加以旋轉之孔徑,自雷射光束之光軸方向觀看 的槪略圖,圖1 8C爲將由孔徑傾斜機構及孔徑旋轉機構加 以旋轉之孔徑,自雷射光束之光軸方向觀看的槪略圖。 圖1 9爲可實行第五實施例之雷射加工方法的雷射加 工裝置槪略圖。 圖2 0爲利用近接遮罩之雷射加工方法的有關轉印精 度模擬結果之被投影貫通孔像的基板平面顯示圖。 圖2 1爲被以某轉印精度實行加工時,可滿足雷射光 束擴散角與近接間隙之關係的槪略曲線顯示圖。 -57· (54) (54)1221102 圖22A爲可實行第六實施例之雷射加工方法的雷射 加工裝置槪略圖,圖22B爲基板之槪略剖面圖。 圖2 3爲使用第六實施例之雷射加工方法進行雷射加 工時的契機信號及雷射光束之時序圖一例示,,:Figure 18 A is a schematic view of the aperture rotated by the aperture tilt mechanism, viewed from the rotation axis direction of the aperture tilt mechanism, and Figure 18 B is the aperture rotated by the aperture tilt mechanism, and the optical axis of the laser beam Figure 1C is a schematic view of the aperture rotated by the aperture tilt mechanism and the aperture rotation mechanism, as viewed from the optical axis direction of the laser beam. Fig. 19 is a schematic view of a laser processing apparatus capable of implementing the laser processing method of the fifth embodiment. Fig. 20 is a plan view of a substrate with a projected through-hole image of a simulation result of transfer accuracy using a laser processing method of a proximity mask. Fig. 21 is a schematic diagram showing the relationship between the laser beam diffusion angle and the close gap when processing is performed with a certain transfer accuracy. -57 · (54) (54) 1221102 FIG. 22A is a schematic view of a laser processing apparatus capable of performing the laser processing method of the sixth embodiment, and FIG. 22B is a schematic cross-sectional view of a substrate. FIG. 23 is an example of timing signals and laser beam timing diagrams for laser processing using the laser processing method of the sixth embodiment ,:

圖24A爲形成線之基板槪略平面圖。爲形成 點之基板槪略平面圖。 J 圖2 5爲保持遮罩之遮罩旋轉機構槪略顯示圖。 圖2 6爲使用遮罩旋轉機構以形成線之基板槪略平面 圖。 圖2 7 Α爲可實行第七實施例之雷射加工方法的雷射 加工裝置槪略圖,圖2 7B爲基板之槪略剖面圖。 圖2 8 A、圖2 8 B及圖2 8 C爲被加工點與光束點之位置 關係說明用的.基板平面圖。 圖2 9爲未使用遮罩旋轉機構以形成線之基板槪略平 面圖。 主要元件對照表 1、1 a、1 b :雷射光源 2 :可調式衰減器 3、3 a :擴張器 4 :圓錐光學系統 4a、4b :圓錐透鏡 5 :遮罩 5 a :孔徑 -58- (55)1221102 6 :物鏡 7 · 電磁掃描器 7a: X方向用掃描器 7b: Y方向用掃描器 8 : 保持台24A is a schematic plan view of a substrate on which lines are formed. A schematic plan view of the substrate on which the dots are formed. J Figure 25 is a schematic view of a mask rotation mechanism holding a mask. Fig. 26 is a schematic plan view of a substrate using a mask rotation mechanism to form a line. Fig. 27A is a schematic view of a laser processing apparatus capable of implementing the laser processing method of the seventh embodiment, and Fig. 2B is a schematic cross-sectional view of a substrate. Fig. 2 A, Fig. 2 B and Fig. 2 C are plan views of the substrate for explaining the positional relationship between the processed point and the beam spot. Fig. 29 is a schematic plan view of a substrate without using a mask rotation mechanism to form a line. Main component comparison table 1, 1 a, 1 b: Laser light source 2: Adjustable attenuator 3, 3 a: Dilator 4: Conical optical system 4a, 4b: Conical lens 5: Mask 5 a: Aperture (55) 1221102 6: Objective lens 7 · Electromagnetic scanner 7a: X-direction scanner 7b: Y-direction scanner 8: Holding stage

8a : XY方向平台 9、1 0 :音圈機構 1 1 :控制器 1 2 :基板 2 0 :光程調整機構 21&〜21€1:反射鏡 2 2 :移動部 30 :薄膜 3 1 :搬運機構 3 2 :真空夾頭8a: XY-direction stage 9, 1 0: Voice coil mechanism 1 1: Controller 1 2: Substrate 2 0: Optical path adjustment mechanism 21 & 21 € 1: Mirror 2 2: Moving section 30: Film 3 1: Transport Mechanism 3 2: Vacuum chuck

3 3 :旋轉編碼器3 3: Rotary encoder

Lla、 Lib、 Lie:雷射光束Lla, Lib, Lie: laser beam

Nla、Ml、Nlc:射入位置 α 1 :射入角 S 〇 :物點 S i :像點Nla, Ml, Nlc: shot position α 1: shot angle S 〇: object point S i: image point

Sig :契機信號 lbO〜lb2 :雷射光束 60a :孔徑傾斜機構 -59- (56) (56)1221102 6 1 a :孔徑旋轉機構 6 2 a :貫通孔 63 :近接掩模 64 :近接掩模保持機構 6 5 :分光光學系統 6 5 a、6 9 a、6 9 b :半波長板 6 5 b :電光元件 6 5 c、6 7 :偏光板 66 :射束緩衝器 6 8 :回折鏡 7 1 :二次聚光鏡 7 1 a :前側透鏡群 7 1 b :後側透鏡群 81a、81b··聚光面 8 3 : —次聚光面 91a〜91c、 93、 94a〜94e、 95、 96、 99:光束點 1 〇 1 :溝槽 103、 103a、 103b、 109a、 109b:線 1 0 4 a 〜1 0 4 e :點 105a〜105c :被加工點 110 、 120 :基底層 1 1 1 :轉印層 1 2 1 :表層 5 1 :雷射光源 -60- (57) (57)1221102 52 :均勻器 53 :遮罩 5 4 :反射鏡 5 5 :聚光鏡 5 6 :基板 57 : XY方向平台Sig: Opportunity signal lbO ~ lb2: Laser beam 60a: Aperture tilt mechanism -59- (56) (56) 1221102 6 1 a: Aperture rotation mechanism 6 2 a: Through hole 63: Proximity mask 64: Proximity mask holding Mechanism 6 5: Spectroscopic optical system 6 5 a, 6 9 a, 6 9 b: Half-wavelength plate 6 5 b: Electro-optical element 6 5 c, 6 7: Polarizing plate 66: Beam buffer 6 8: Folding mirror 7 1 : Secondary condenser 7 1 a: Front lens group 7 1 b: Rear lens group 81a, 81b · Condensing surface 8 3:-Secondary condensing surface 91a to 91c, 93, 94a to 94e, 95, 96, 99 : Beam point 1 〇1: Grooves 103, 103a, 103b, 109a, 109b: Lines 1 0 4a to 1 0 4e: Points 105a to 105c: Processed points 110, 120: Base layer 1 1 1: Transfer Layer 1 2 1: Surface layer 5 1: Laser light source-60- (57) (57) 1221102 52: Uniformizer 53: Mask 5 4: Mirror 5 5: Condenser 5 6: Substrate 57: XY-direction stage

Claims (1)

(1)1221102 拾、申請專利範圍 1 · 一種雷射加工方法,係具有: (a)以具貫通孔之遮罩整形射束剖面,俾使該 貫通孔成像於加工對象物表面上,由透鏡將通過該 之雷射光束予以聚光並射入於該加工對象物表面上 ;與 (b)藉雷射光束之射入位置在上述加工對象物 移動,令通過上述透鏡之雷射光束進行掃描同時, 光束掃描中亦使上述貫通孔在加工對象物表面上成 工該加工對象物的工程。 2 ·如申請專利範圍第1項記載之雷射加工方 中’上述工程(a)係將上述遮罩與上述透鏡間之光 度’及上述透鏡至上述加工對象物表面之光路徑長 於一定的狀態,促使雷射光束進行掃描。 3 ·如申請專利範圍第1項記載之雷射加工方 中’ Ji述工程(b)係含有促使上述透鏡沿與通過該 雷射光束進行方向呈平行之方向予以變位,以及促 ^0莫沿@通過該遮罩之雷射光束進行方向呈平行之 以變位的工程。 4 · %申請專利範圍第1項記載之雷射加工方 Ψ ’ ± Μ X程(a)係將通過上述貫通孔之雷射光束 上述加工對象物表面,俾使上述加工對象物表面上 點呈具有〜對平行側邊的形狀,上述工程(b)乃使 $ _ P @ i:述一對平行側邊呈平行之方向予以移動 遮罩的 貫通孔 的工程 表面上 在雷射 像而加 法,其 路徑長 度保持 法,其 透鏡之 使上述 方向予 法,其 射入於 之光束 上述光 ,而令 -62- (2)1221102 雷射光束進行掃描° 5. 如申請專利範圍第1項記載之雷射加工方法 中,射入於上述加工對象物表面上之雷射光束在上述 對象物表面上的強度分佈,係爲光束點周邊部之強度 央部之強度爲大的分佈。 6. 如申請專利範圍第1項記載之雷射加工方法 中,射入於上述加工對象物表面上之雷射光束係爲脈 射光束,而上述工程(b)含有對於上述加工對象物表 之射入角變大時,可促使上述雷射光束之脈衝能量變 將脈衝能量予以變化之工程。 7 .如申請專利範圍第1項記載之雷射加工方法 中,上述工程(b)在掃描上述加工對象物表面上之雷 束對於上述加工對象物表面上之射入角變動時,係將 遮罩及上述透鏡予以變位,促使上述加工對象物表面 射光束的光束點面積變動趨小。 8 · —種雷射加工方法,係具有: (c) 將透鏡所聚光之雷射光束予以射入於加工對 表面之工程;與 (d) 使雷射光束射入位置移動於上述加工對象物 上而加工該加工對象物之工程,亦是避免該雷射光束 上述透鏡至上述加工對象物表面的光路徑長度發生變 實行該雷射光束掃描之工程。 9 .如申請專利範圍第8項記載之雷射加工方法 中’上述工程(d)係含有避免該雷射光束之自上述透 ,其 加工 比中 ,其 衝雷 面上 大地 ,其 射光 上述 之雷 象物 表面 之自 化地 ,其 鏡至 -63- (3) (3)1221102 上述加工對象物表面的光路徑長度發生變化,而促使上述 透鏡沿通過該透鏡之雷射光束進行方向予以變位之工程。 10.如申請專利範圍第8項記載之雷射加工方法,其 中,射入於上述透鏡之雷射光束係爲被準直的射束,而上 述透鏡至上述加工對象物表面之光路徑長度是相同於上述 透鏡之焦距。 Π . —種雷射加工裝置,係含有: 可射出雷射光束之雷射光源;與 保持加工對象物之保持台;與 具有可整形上述雷射光源所射出雷射光束剖面之貫通 ?L的遮罩;與 將被上述遮罩整形剖面之雷射光束加以聚光藉該遮罩 之貫通孔成像於上述保持台所保持的加工對象物表面之聚 光鏡;與 接受外部之控制,促使上述聚光鏡所聚光之雷射光束 在上述加工對象物表面上至少沿一維方向進行掃描之射束 掃描器;與 接受外部之控制,促使上述遮罩及上述聚光鏡移動之 移動機構;與 促使上述射束掃描器之掃描,及上述移動機構所致的 上述遮罩和上述聚光鏡之移動同步進行的控制裝置。 12·如申請專利範圍第1 1項記載之雷射加工裝置, 其中’上述移動機構係將上述遮罩及上述聚光鏡間之光路 徑長度保持於一定同時,避免上述射束掃描器所掃描雷射 -64 - (4)1221102 光束之自上述 促使上述聚光 向,及促使上 方向。 13. 如申 其中,上述移 射光束對於上 物表面上之上 罩及上述聚光 14. 如申 其中,更具有 能量的可調式 上述加工對象 可調式衰減器 15. 如申 其中,更具有 述脈衝雷射光 周邊部爲大之 16·如申 其中,上述遮 17.如申 其中,上述射 物表面上被劃 述聚光鏡所聚 聚光鏡至上述加工面的光路徑長度變 鏡移動於通過該聚光鏡之雷射光束的 述遮罩移動於通過該遮罩之雷射光束 請專利範圍第11項記載之雷射加工 動機構係爲掃描上述加工對象物表面 述加工面之射入角變動時,促使該加 述貫通孔的像面積變動趨小,而移動 鏡之移動機構。 請專利範圍第11項記載之雷射加工 能調節上述雷射光源所射出雷射光束 衰減器、亦即雷射光束以較大射入角 物表面時,將脈衝能量之衰減率予以 〇 請專利範圍第1 1項記載之雷射加工 上述雷射光源射出脈衝雷射光束時, 束之射束剖面的脈衝能量密度設成中 脈衝能量密度變換裝置。 請專利範圍第1 1項記載之雷射加工 罩之貫通孔係呈具有一對平行邊的形 請專利範圍第1 6項記載之雷射加工 束掃描器係含有上述保持台所保持加 定互相正交之X方向及Y方向時, 光雷射光束在上述加工對象物表面 化地, 進行方 的進行 裝置, 上之雷 工對象 上述遮 裝置, 之脈衝 射入於 趨小的 裝置, 可將上 央部比 裝置, 伏。 裝置, 工對象 可使上 Ji沿 X(1) 1221102 Scope of application and patent application1. A laser processing method has: (a) shaping a beam profile with a mask having a through hole, so that the through hole is imaged on the surface of the object to be processed, and a lens The laser beam passing through the laser beam is condensed and incident on the surface of the object to be processed; and (b) the position of the laser beam is moved over the object to be scanned, so that the laser beam passing through the lens is scanned At the same time, during the beam scanning, the above-mentioned through-hole is also a process for forming the processing object on the surface of the processing object. 2 · According to the laser processing method described in item 1 of the scope of the patent application, the above-mentioned process (a) refers to a state in which the light path between the mask and the lens and the light path from the lens to the surface of the processing object are longer than a certain state. To cause the laser beam to scan. 3 · As described in the laser processing party described in item 1 of the patent application, the above-mentioned project (b) contains a method for causing the lens to be displaced in a direction parallel to the direction through which the laser beam passes, and promoting The laser beam passing through the mask is parallel and displaced in the direction of the project. 4. The laser processing method described in item 1 of the scope of the patent application ± '± MX X (a) means that the laser beam passing through the through hole is on the surface of the object to be processed, so that the surface of the object to be processed is spotted It has the shape of ~ pairs of parallel sides, the above-mentioned process (b) is to add $ _P @ i: the pair of parallel sides are moved in a direction parallel to the through hole of the mask to add a laser image on the engineering surface, The method of maintaining the path length, the direction of the lens, and the direction of the above-mentioned light beam, and let the -62- (2) 1221102 laser beam scan. 5. As described in item 1 of the scope of patent application In the laser processing method, the intensity distribution of the laser beam incident on the surface of the object to be processed on the surface of the object is a distribution having a large intensity at the central portion of the intensity at the periphery of the beam spot. 6. In the laser processing method described in item 1 of the scope of the patent application, the laser beam incident on the surface of the object to be processed is a pulsed beam, and the above-mentioned process (b) contains information on the object to be processed. When the incident angle becomes larger, the pulse energy of the laser beam can be changed to change the pulse energy. 7. According to the laser processing method described in item 1 of the scope of the patent application, the above-mentioned process (b) will scan the laser beam on the surface of the processing object and change the incident angle on the surface of the processing object. The cover and the lens are displaced to promote a smaller variation in the area of the beam spot of the light beam emitted from the surface of the processing object. 8 · A laser processing method, comprising: (c) projecting the laser beam collected by the lens onto the processing surface; and (d) moving the laser beam incident position to the processing object The process of processing the object on the object is to prevent the laser beam from changing the length of the optical path from the lens of the laser beam to the surface of the object to perform the laser beam scanning. 9. According to the laser processing method described in item 8 of the scope of the patent application, the above-mentioned project (d) contains the laser beam to prevent the laser beam from passing through the above. In the processing ratio, the ground on the surface of the lightning strike and the light emitted from the above The surface of the surface of a lightning object has a mirror to -63- (3) (3) 1221102 The length of the light path on the surface of the object to be processed changes, which causes the lens to change along the direction of the laser beam passing through the lens. Bit of engineering. 10. The laser processing method according to item 8 in the scope of the patent application, wherein the laser beam incident on the lens is a collimated beam, and the length of the light path from the lens to the surface of the processing object is The focal length is the same as the above lens. Π. A laser processing device, comprising: a laser light source capable of emitting a laser beam; and a holding table for holding an object to be processed; and a penetrating laser beam having a cross section? A mask; a condenser lens for condensing the laser beam that has been shaped by the mask through the through hole of the mask to form an image on the surface of the processing object held by the holding table; and receiving external control to cause the condenser lens to focus A beam scanner that scans at least one-dimensional direction of the laser beam on the surface of the object to be processed; and a movement mechanism that receives external control to cause the mask and the condenser to move; and the beam scanner that facilitates the movement of the mask and the condenser A control device for synchronously performing the scanning of the mask and the movement of the mask and the condenser caused by the moving mechanism. 12. The laser processing device described in item 11 of the scope of the patent application, wherein 'the moving mechanism is to keep the length of the light path between the mask and the condenser to a certain length while avoiding the laser scanned by the beam scanner. -64-(4) 1221102 The above-mentioned light beam promotes the above-mentioned condensing direction and the upward direction. 13. As claimed, the above-mentioned shifting beam is for the upper cover on the surface of the object and the above-mentioned light condensing. 14. As claimed, the energy-adjustable adjustable processing object adjustable attenuator is described above. 15. As claimed, the more described The peripheral part of the pulsed laser light is as large as 16. If it is claimed, the above cover is 17. As described above, the light path length changing mirror on the surface of the projected object condensed by the condensing lens to the processing surface is moved to the light passing through the condensing lens. When the mask of the laser beam moves through the laser beam passing through the mask, the laser processing mechanism described in item 11 of the patent scope is to cause the In addition, the variation of the image area of the through hole becomes smaller, and the moving mechanism of the moving mirror. The laser processing described in item 11 of the patent scope can adjust the laser beam attenuator emitted by the above laser light source, that is, when the laser beam enters the surface of the angle with a large amount, the attenuation rate of the pulse energy is patented. In the laser processing described in the item 11 of the range, when the above laser light source emits a pulsed laser beam, the pulse energy density of the beam profile of the beam is set to a medium pulse energy density conversion device. The through-holes of the laser processing cover described in item 11 of the patent range have a pair of parallel sides. The laser-processed beam scanners described in item 16 of the patent range include the above-mentioned holding tables and are mutually positive. When the X and Y directions intersect, the light laser beam is surfaced on the above-mentioned object to be processed, and the above-mentioned shielding device of the laser object is pulsed into a smaller device, and the upper center can be Bibi device, Volt. Device, work object can make up Ji along X -65- (5) (5)1221102 方向掃描之χ方向掃描器與沿γ方向掃描之γ方向掃描 器,而上述聚光鏡促使上述加工對象物表面上之上述貫通 孔像的一對平行邊與X方向呈平行地予以成像。 1 8 . —種雷射加工方法,係具有: (e) 將雷射光束以透鏡予以聚光,射入於加工對象物 表面之工程;與 (f) 當上述加工對象物之雷射光束射入位置移動時, 促使上述透鏡移動以抑制射入位置移動所起因的上述加工 對象物表面之雷射光束的脈衝能量密度或功率密度之變動 同時,將雷射光束射入位置在上述加工對象物表面內予以 移動之工程。 19.如申請專利範圍第1 8項記載之雷射加工方法, 其中,係在上述工程(f),欲抑制上述加工對象物表面之 雷射光束的脈衝能量密度或功率密度增加時,即移動上述 透鏡促使雷射光束之焦點位置遠離射入位置,欲抑制上述 加工對象物表面之雷射光束的脈衝能量密度或功率密度減 少時,則移動上述透鏡促使雷射光束之焦點位置接近射入 位置。 2 0 . —種雷射加工方法,係具有: 將雷射光束以透鏡予以聚光,射入於加工對象物表面 之工程;與 當上述加工對象物之雷射光束射入位置移動時,促使 上述透鏡移動以抑制射入位置移動所起因的上述加工對象 物表面之光束點面積的變動同時,將雷射光束射入位置在 • 66 - (6)1221102 上述加工對象物表面內予以移動之工程。 2 1 · —種雷射加工裝置,係具有: 可射出雷射光束之雷射光源;與 保持加工對象物之保持機構;與 可將上述雷射光源所射出雷射光束予以聚光之透鏡; 與-65- (5) (5) 1221102 χ-direction scanner and γ-direction scanner scanning in the γ direction, and the condenser promotes a pair of parallel sides of the through-hole image on the surface of the object to be processed and X Directions are imaged in parallel. 18 — A laser processing method comprising: (e) a process of condensing a laser beam with a lens and incident on the surface of a processing object; and (f) when the laser beam of the processing object is radiated When the incident position is moved, the lens is moved to suppress the pulse energy density or power density of the laser beam on the surface of the processing object caused by the movement of the incident position, and at the same time, the laser beam is incident on the processing object. Works that move within the surface. 19. The laser processing method described in item 18 of the scope of the patent application, wherein in the above-mentioned process (f), if the pulse energy density or power density of the laser beam on the surface of the object to be suppressed is increased, it moves The lens promotes the focal position of the laser beam away from the incident position. When the pulse energy density or power density of the laser beam on the surface of the object to be suppressed is reduced, the lens is moved to promote the focal position of the laser beam close to the incident position . 2 0. A laser processing method, which includes: a process of condensing a laser beam with a lens and incident on a surface of a processing object; and when the laser beam incident position of the processing object moves, causing The movement of the lens to suppress the change of the beam spot area on the surface of the processing object caused by the movement of the incident position, and to move the laser beam incident position within the surface of the processing object while moving the laser beam into the position • 66-(6) 1221102 . 2 1 · A laser processing device, comprising: a laser light source capable of emitting a laser beam; a holding mechanism for holding an object to be processed; and a lens capable of condensing the laser beam emitted by the laser light source; versus 可使上述透鏡所射出雷射光束之進行方向搖擺,令雷 射光束射入於上述保持機構所保持的加工對象物表面,而 使雷射光束之射入位置在加工對象物表面內予以移動的射 束掃描器;與 接受外部之控制信號,促使上述透鏡移動之移動機構 ;與The direction of the laser beam emitted by the lens can be swung, so that the laser beam is incident on the surface of the processing object held by the holding mechanism, and the incident position of the laser beam is moved within the surface of the processing object. Beam scanner; and a movement mechanism that receives external control signals to cause the lens to move; and 當上述射束掃描器促使雷射光束之射入位置在加工對 象物表面移動時,可控制上述移動機構俾使上述透鏡位置 移動,以抑制加工對象物表面之雷射光束的脈衝能量密度 或功率密度變化之控制裝置。 22. 如申請專利範圍第21項記載之雷射加工裝置, 其中,上述控制裝置在抑制上述加工對象物表面之雷射光 束的脈衝能量密度或功率密度增加時,係控制上述移動機 構予以移動上述透鏡促使雷射光束之焦點位置遠離射入位 置,而在抑制上述加工對象物表面之雷射光束的脈衝能量 密度或功率密度減少時,乃控制上述移動機構予以移動上 述透鏡促使雷射光束之焦點位置接近射入位置。 23. —種雷射加工裝置,係具有: -67- (7) (7)1221102 可射出雷射光束之雷射光源;與 保持加工對象物之保持機構;與 可將上述雷射光源所射出雷射光束予以聚光之透鏡; 與 可使上述透鏡所射出雷射光束之進行方向搖擺’令雷 射光束射入於上述保持機構所保持的加工對象物表面’而 使雷射光束之射入位置在加工對象物表面內予以移動的射 束掃描器;與 接受外部之控制信號,促使上述透鏡移動之移動機構 :與 當上述射束掃描器促使雷射光束之射入位置在加工對 象物表面移動時,可控制上述移動機構俾使上述透鏡位置 移動,以抑制加工對象物表面之光束點面積變動的控制裝 置。 2 4 · —種雷射加工方法,係具有: (g) 將雷射光束以透鏡予以聚光,射入於加工對象物 表面之工程;與 (h) 當上述加工對象物之雷射光束射入位置移動時, %用可變減衰器調節雷射光束之功率,以抑制射入位置移 _所起因的上述加工對象物表面之雷射光束的脈衝能量密 ^或功率密度之變動同時,將雷射光束射入位置在上述加 工對象物表面內予以移動之工程。 25. —種雷射加工裝置,係具有: 可射出雷射光束之雷射光源;與 -68- (8) (8)1221102 保持加工對象物之保持機構;與 可將上述雷射光源所射出雷射光束予以聚光之透鏡; 與 可使上述透鏡所射出雷射光束之進行方向搖擺’令雷 射光束射入於上述保持機構所保持的加工對象物表面’而 使雷射光束之射入位置在加工對象物表面內予以移動的射 束掃描器;與 接受外部之控制信號’以可變之減衰率衰減雷射光束 的功率之可變減衰器;與 當上述可變減衰器促使雷射光束之射入位置在加工對 象物表面移動時,可控制上述可變減衰器調節雷射光束的 功率,以抑制加工對象物表面之雷射光束的脈衝能量密度 或功率密度變化之控制裝置。 2 6 . —種雷射加工裝置,係具有: 可射出雷射光束之雷射光源;與 保持加工對象物之保持機構;與 可將上述雷射光源所射出雷射光束予以收歛或擴散之 第一透鏡;與 可使通過上述第一透鏡之雷射光束射入’將所射入雷 射光束予以聚光的第二透鏡;與 可使上述第二透鏡所射出雷射光束之進行方向搖擺, 令雷射光束射入於上述保持機構所保持的加工對象物表面 ,且使雷射光束之射入位置在加工對象物表面內移動的射 束掃描器;與 Γ f, -69- (9) (9)1221102 接受外部之控制信號,促使上述第一透鏡移動之移動 機構;與 當上述射束掃描器促使雷射光束之射入位置在加工對 象物表面移動時,可控制上述移動機構俾使上述第一透鏡 位置移動,以抑制加工對象物表面之雷射光束的脈衝能量 密度或功率密度變化之控制裝置; 而將對於射入上述第二透鏡之雷射光束的該第二透鏡 之數値口徑設爲NA1、將對於通過上述第二透鏡之雷射光 束的該第二透鏡之數値口徑設爲NA2時,NA1/NA2是2 以上者。 2 7 · —種雷射加工裝置,係具有: 可射出雷射光束之雷射光源;與 保持加工對象物之保持機構;與 具有上述雷射光源所射出雷射光束射入之貫通孔5且 接受外部之控制信號,可改變通過貫通孔之雷射光束的剖 面一方向長度之射束剖面整形器;與 可將上述射束剖面整形器所射出雷射光束予以聚光之 透鏡;與 可使上述透鏡所射出雷射光束之進行方向搖擺,令雷 射光束射入於上述保持機構所保持的加工對象物表面,且 使雷射光束之射入位置在加工對象物表面內移動的射束掃 描器;與 當上述射束掃描器促使雷射光束之射入位置在加工對 象物表面移動時,可控制上述射束剖面整形器,由該射束 -70- (10) (10)1221102 剖面整形器抑制加工對象物表面之光束點形狀變動的控制 裝置。 28. 如申請專利範圍第2 7項記載之雷射加工裝置, 其中,上述射束剖面整形器在整形雷射光束剖面呈一方向 較長形狀時,係促使上述貫通孔自垂直於雷射光束進行方 向之面予以傾斜。 29. 如申請專利範圍第2 8項記載之雷射加工裝置, 其中,上述射束剖面整形器係能使上述貫通孔旋轉於與雷 射光束進行方向呈平行之軸周圍。 3 0 · —種雷射加工裝置,係具有: 可射出雷射光束之雷射光源;與 保持加工對象物之保持機構;與 可將上述雷射光源所射出雷射光束予以聚光之透鏡; 與 可使上述透鏡所射出雷射光束之進行方向搖擺,令雷 射光束射入於上述保持機構所保持的加工對象物表面,且 使雷射光束之射入位置在加工對象物表面內移動的射束掃 描器;與 具有貫通孔,被配置於自上述射束掃描器所射出雷射 光束射入於加工對象物爲止之光路徑中途,而使通過該貫 通孔之雷射光束射入於加工對象物的近接遮罩。 3 1 .如申請專利範圍第3 0項記載之雷射加工裝置, 其中,更具有: 接受外部之控制信號,促使上述透鏡移動之移動機構 -71 - (11)1221102When the beam scanner causes the incident position of the laser beam to move on the surface of the processing object, the moving mechanism may be controlled to move the lens position to suppress the pulse energy density or power of the laser beam on the surface of the processing object. Control device for density change. 22. The laser processing device according to item 21 of the scope of the patent application, wherein the control device controls the moving mechanism to move the pulse energy density or power density of the laser beam on the surface of the processing object when the pulse energy density or power density is increased. The lens promotes the focus position of the laser beam away from the entrance position, and when the pulse energy density or power density of the laser beam on the surface of the processing object is suppressed from decreasing, the moving mechanism is controlled to move the lens to promote the focus of the laser beam The position is close to the injection position. 23. —A laser processing device having: -67- (7) (7) 1221102 a laser light source capable of emitting a laser beam; and a holding mechanism for holding a processing object; and a laser light source capable of emitting the above-mentioned laser light source A lens for condensing the laser beam; and oscillating the direction of the laser beam emitted by the lens, 'make the laser beam incident on the surface of the processing object held by the holding mechanism', so that the laser beam is incident A beam scanner whose position is moved within the surface of the processing object; and a movement mechanism that receives the external control signal to cause the lens to move: and when the beam scanner causes the laser beam to be incident on the surface of the processing object A control device that can control the moving mechanism to move the lens position during movement so as to suppress variation in the area of the beam spot on the surface of the processing object. 2 4 — A laser processing method, comprising: (g) a process of condensing a laser beam with a lens and projecting it onto the surface of the processing object; and (h) when the laser beam of the processing object is radiated When the entry position is moved,% the power of the laser beam is adjusted with a variable attenuator to suppress the change in the pulse energy density or power density of the laser beam on the surface of the processing object caused by the entry position shift_ The process of moving the laser beam incident position within the surface of the object to be processed. 25. —A laser processing device comprising: a laser light source capable of emitting a laser beam; and -68- (8) (8) 1221102 a holding mechanism for holding a processing object; and a laser light source capable of emitting the above-mentioned laser light source A lens for condensing the laser beam; and oscillating the direction of the laser beam emitted by the lens, 'make the laser beam incident on the surface of the processing object held by the holding mechanism', so that the laser beam is incident A beam scanner whose position is moved within the surface of the object to be processed; and a variable attenuator that attenuates the power of the laser beam at a variable attenuation rate by receiving an external control signal; and when the variable attenuator promotes the laser A control device that can control the variable attenuator to adjust the power of the laser beam when the incident position of the beam moves on the surface of the processing object, so as to suppress the pulse energy density or power density of the laser beam on the surface of the processing object. 2 6. A laser processing device comprising: a laser light source capable of emitting a laser beam; and a holding mechanism for holding an object to be processed; and a first stage capable of converging or diffusing the laser beam emitted by the laser light source A lens; and a second lens that allows the laser beam passing through the first lens to be used to converge the incident laser beam; and a swinging direction of the laser beam emitted by the second lens, A beam scanner that makes a laser beam incident on the surface of a processing object held by the holding mechanism and moves the incident position of the laser beam within the surface of the processing object; and Γ f, -69- (9) (9) 1221102 A movement mechanism that causes the first lens to move when receiving an external control signal; and when the beam scanner causes the incident position of the laser beam to move on the surface of the processing object, the movement mechanism can be controlled to act A control device for moving the position of the first lens to suppress a change in pulse energy density or power density of a laser beam on a surface of a processing object; and The second lens of the laser beam diameter is set to the number Zhi NA1, the second for the number of lenses through which the laser beam of the second lens aperture NA2 is in Zhi, NA1 / NA2 is 2 or more. 2 7 · A laser processing device comprising: a laser light source capable of emitting a laser beam; and a holding mechanism for holding an object to be processed; and a through hole 5 through which the laser beam emitted by the laser light source is incident; A beam profiler that can change the length of one direction of the laser beam through the through hole by receiving an external control signal; and a lens that condenses the laser beam emitted by the beam profiler; The direction of the laser beam emitted by the lens is oscillated, so that the laser beam is incident on the surface of the processing object held by the holding mechanism, and the beam scanning that moves the incident position of the laser beam within the surface of the processing object And when the above-mentioned beam scanner causes the incident position of the laser beam to move on the surface of the processing object, the beam profile shaper can be controlled by the beam-70- (10) (10) 1221102 profile shaping A control device that suppresses variations in the shape of a beam spot on the surface of a processing object. 28. The laser processing device described in item 27 of the scope of the patent application, wherein the beam profiler is configured to cause the through hole to be perpendicular to the laser beam when the shaped laser beam profile is long in one direction. The face in the direction of travel is tilted. 29. The laser processing device according to item 28 in the scope of the patent application, wherein the beam profile shaper is capable of rotating the through hole around an axis parallel to the laser beam traveling direction. 3 0 · —A laser processing device comprising: a laser light source capable of emitting a laser beam; and a holding mechanism for holding a processing object; and a lens capable of condensing the laser beam emitted by the laser light source; And can make the direction of the laser beam emitted by the lens swing, so that the laser beam is incident on the surface of the processing object held by the holding mechanism, and the incident position of the laser beam is moved within the surface of the processing object. A beam scanner; and a through-hole, which is arranged in the light path until the laser beam emitted from the above-mentioned beam scanner enters the object to be processed, so that the laser beam passing through the through-hole is incident on the processing The close mask of the object. 31. The laser processing device described in item 30 of the scope of patent application, which further includes: a movement mechanism that accepts an external control signal to cause the lens to move -71-(11) 1221102 當上述射束掃描器促使雷射光束之射入位置在加工對 象物表面移動時,可控制上述移動機構俾使上述透鏡位置 移動,以抑制加工對象物表面之雷射光束的脈衝能量密度 或功率密度變化之控制裝置。 3 2 · —種雷射加工方法,係具有:When the beam scanner causes the incident position of the laser beam to move on the surface of the processing object, the moving mechanism may be controlled to move the lens position to suppress the pulse energy density or power of the laser beam on the surface of the processing object. Control device for density change. 3 2 · —A laser processing method with: 調整雷射光源所射出雷射光束之擴散角的工程;與 平行於加工對象物表面被配置於自該表面僅離間所定 距離之位置,且將被調整爲具上述所定擴散角之雷射光束 的進行方向予以搖擺同時,將該雷射光束照射於具有貫通 孔之近接遮罩,令通過該貫通孔之雷射光束射入於該加工 對象物表面,而將該貫通孔之形狀轉印於該加工對象物表 面的工程;與The process of adjusting the diffusion angle of the laser beam emitted by the laser light source; parallel to the surface of the object to be processed is located at a predetermined distance from the surface, and will be adjusted to the laser beam having the predetermined diffusion angle While swinging in the direction, the laser beam is irradiated to a close-up mask having a through hole, so that the laser beam passing through the through hole is incident on the surface of the object to be processed, and the shape of the through hole is transferred to the Engineering of the surface of the object to be processed; and 將上述所定擴散角及上述所定距離之至少一方,依據 該貫通孔之形狀被轉印於該加工對象物表面的精度、及雷 射光束之擴散角、以及關於上述近接遮罩和上述加工對象 物表面間之距離所預先求取的關係加以設定之工程。 3 3 . —種雷射加工裝置,係具有: 可射出連續波雷射光束之雷射光源;與 保持加工對象物之保持機構;與 被射入上述雷射光源所射出雷射光束,且依據外部所 付予契機信號,可將所射入雷射光束切換爲予以射出第一 方向之狀態及不予射出第一方向之狀態的光學系統;與 具有矩形貫通孔,使自上述光學系統以第一方向射出 -72- (12)1221102 之雷射光束射入於該貫通孔’以整形雷射光束剖面之遮罩 ;與 將上述遮罩射出之雷射光束予以聚光’使上述遮罩之 矩形貫通孔在上述保持機構所保持加工對象物表面成像的 透鏡;與 依據外部所付予控制信號將上述保持機構予以移動, 可使上述透鏡所射出雷射光束之射入於加工對象物的位置 在加工對象物表面內予以移動之移動機構;與At least one of the predetermined diffusion angle and the predetermined distance is transferred to the surface of the processing object according to the shape of the through-hole, the diffusion angle of the laser beam, and the proximity mask and the processing object. A process in which the relationship between surfaces is determined in advance. 3 3. A laser processing device having: a laser light source capable of emitting a continuous wave laser beam; and a holding mechanism for holding an object to be processed; and a laser beam emitted by the laser light source injected above, and based on The externally provided opportunity signal can switch the incident laser beam into a state where the first direction is emitted and a state where the first direction is not emitted; and an optical system with a rectangular through-hole, A laser beam emitted in one direction of -72- (12) 1221102 is incident on the through hole 'shaping the mask of the laser beam profile; and condensing the laser beam emitted by the aforementioned mask' causes the aforementioned mask to A lens through which a rectangular through-hole forms an image on the surface of the processing object held by the holding mechanism; and moving the holding mechanism according to a control signal provided from the outside, so that the laser beam emitted by the lens is incident on the position of the processing object A moving mechanism that moves within the surface of a processing object; and 依據外部所付予控制信號,令上述遮罩旋轉於和通過 該遮罩之貫通孔的雷射光束光軸呈平行之軸周圍的遮罩旋 轉機構;與According to a control signal given from the outside, the above-mentioned mask is rotated around a mask rotation mechanism which is parallel to the axis of the laser beam optical axis passing through the through hole of the mask; and 對上述光學系統送出上述契機信號,以控制上述移動 機構,促使上述移動機構將雷射光束之對加工對象物的射 入位置移動於第二方向,且控制上述遮罩旋轉機構,在上 述移動機構將加工對象物表面上之雷射光束射入位置移動 於該第二方向前,令該遮罩旋轉機構俾使上述矩形貫通孔 之在加工對象物表面的像某一邊平行於該第二方向之控制 裝置。 3 4 · —·種雷射加工方法,係具有: (i) 將雷射光源所射出連續波雷射光束射入於可將所 射入雷射光束切換爲自第一方向予以射出之狀態及自第一 方向不予射出之狀態的光學系統之工程;與 (j) 將自上述光學系統向第一方向射出之雷射光束射 入於具矩形貫通孔的遮罩加以整形,並以透鏡聚光,而使 -73- (13)1221102 上述貫通孔之像在加工對象物表面成像的工程;與 (k) 令上述貫通孔之像在上述加工對象物表面上沿該 像某一邊之平行方向移動的工程; 而欲在加工對象物表面形成點狀之離散性圖形時,即 在上述工程(i) ’自上述光學系統向上述第一方向間歇性地 射出雷射光束, 欲在加工對象物表面形成線狀圖形時,即在上述工程 (i ),自上述光學系統向上述第一方向連續性地射出雷射光 束。 3 5·如申請專利範圍第3 4項記載之雷射加工方法, 其中,在上述工程(k)之後,更含有: (l) 促使上述貫通孔之像可在上述加工對象物表面上 旋轉,而使遮罩沿平行於雷射光束進行方向之軸周圍旋轉 的工程;與 (m) 將在上述工程(i)於加工對象物表面上予以旋轉 之上述貫通孔的像,沿平行與被旋轉上述貫通孔之像某一 邊的方向予以移動的工程。 3 6 . —種雷射加工裝置,係具有: 可保持加工對象物之保持機構;與 可射出脈衝雷射光束之第一雷射光源;與 可射出連續波雷射光束之第二雷射光源;與 將上述第一雷射光源射出之脈衝雷射光束及上述第二 雷射光源射出之連續波雷射光束,以連續波雷射光束之光 束點內部包含脈衝雷射光束之光束點地予以照射於上述保 S4S -74- (14)1221102 持機構所保持加工對象物表面的光學系統;與 促使脈衝雷射光束及連續波雷射光束之光束點在上述 保持機構所保持加工對象物表面上移動的移動機構。Sending the opportunity signal to the optical system to control the moving mechanism, to cause the moving mechanism to move the incident position of the laser beam to the processing object in the second direction, and to control the mask rotation mechanism, Move the laser beam incident position on the surface of the processing object in front of the second direction, and make the mask rotation mechanism make one side of the image of the rectangular through hole on the surface of the processing object parallel to the second direction. Control device. 3 4 ··· A laser processing method, comprising: (i) a state in which a continuous wave laser beam emitted from a laser light source is injected into a state where the incident laser beam can be switched to be emitted from a first direction, and Engineering of an optical system in a state where emission is not allowed from the first direction; and (j) the laser beam emitted from the optical system in the first direction is incident on a mask with a rectangular through-hole to be shaped, and is condensed by a lens Light, and -73- (13) 1221102 the process of imaging the through-hole image on the surface of the processing object; and (k) making the image of the through-hole on the surface of the processing object along a parallel side of the image Moving process; and when it is desired to form a dot-like discrete pattern on the surface of the processing object, that is, in the above process (i), the laser beam is intermittently emitted from the optical system in the first direction. When a linear pattern is formed on the surface, that is, in the process (i), a laser beam is continuously emitted from the optical system in the first direction. 35. The laser processing method described in item 34 of the scope of patent application, wherein after the above-mentioned process (k), it further comprises: (l) promoting the image of the through-hole to rotate on the surface of the object to be processed, The process of rotating the mask around an axis parallel to the direction in which the laser beam travels; and (m) the image of the through hole to be rotated on the surface of the object in the process (i), parallel and rotated The process of moving the image of the through hole on one side. 36. —A laser processing device having: a holding mechanism capable of holding a processing object; a first laser light source capable of emitting a pulsed laser beam; and a second laser light source capable of emitting a continuous wave laser beam ; And the pulsed laser beam emitted from the first laser light source and the continuous wave laser beam emitted from the second laser light source are provided with the beam point of the pulsed laser beam inside the beam point of the continuous wave laser beam Optical system that irradiates the surface of the object to be held by the above-mentioned holding mechanism S4S -74- (14) 1221102; and the beam points that promote the pulse laser beam and continuous wave laser beam on the surface of the object to be held by the holding mechanism Moving mobile mechanism. 37.如申請專利範圍第3 6項記載之雷射加工裝置, 其中,上述光學系統係將上述第一雷射光源射出之脈衝雷 射光束或上述第二雷射光源射出之連續波雷射光束的至少 一方光軸予以變化,而促使脈衝雷射光束與連續波雷射光 束沿同一光軸進行,且將雷射光束照射於上述保持機構所 保持加工對象物表面。 3 8 . —種雷射加工方法,係具有: (η)自第一雷射光源射出脈衝雷射光束,及自第二雷 射光源射出連續波雷射光束之工程;與37. The laser processing device according to item 36 in the scope of the patent application, wherein the optical system is a pulsed laser beam emitted by the first laser light source or a continuous wave laser beam emitted by the second laser light source At least one of the optical axes is changed so that the pulsed laser beam and the continuous wave laser beam are caused to proceed along the same optical axis, and the laser beam is irradiated onto the surface of the object held by the holding mechanism. 38. —A laser processing method comprising: (η) a project of emitting a pulsed laser beam from a first laser light source and a continuous wave laser beam from a second laser light source; and (〇)對基底層及基底層表面上所形成具有以比基底層 材質更不易照射雷射加工之材質予以形成的表層之加工對 象物表面所劃定被加工點,經照射自上述第二雷射光源射 出之連續波雷射光束付與預熱後,再對該被加工點照射自 上述第一雷射光源射出之脈衝雷射光束,而在上述加工對 象物表層形成孔穴之工程。 3 9 ·如申請專利範圍第3 8項記載之雷射加工方法, 其中,在上述工程(〇),上述第二雷射光源所射出之連續 波雷射光束係對上述加工對象物賦予上述基底層溫度停留 於該基底層融點以下之預熱者。 4 0 ·如申請專利範圍第3 8項記載之雷射加工方法, 其中,在上述工程(〇),係使連續波雷射光束之光束點內 -75· (15)1221102 部包含脈衝 述加工對象 脈衝雷射光 過連續波雷 射位置 ° 41 ·如 其中,在上 波雷射光束 點位於該圓 雷射光束之光束點,且使上述某被加工 物表面內,由連續波雷射光束之光束點 束照射位置予以移動,而令上述某被加 射光束之光束點內部後再到達脈衝雷射 申請專利範圍第4 0項記載之雷射加工 述工程(〇),係將上述加工對象物表面 之光束點設成圓形’且使脈衝雷射光束 形之中心。 點在上 外部向 工點通 光束照 方法, 之連續 之光束 -76-(〇) The processing point is defined on the surface of the base layer and on the surface of the base layer, the surface of the object to be processed having a surface layer formed of a material that is harder to irradiate laser processing than the base layer material, and the second laser is irradiated from the second laser After the continuous wave laser beam emitted from the light source is preheated, the processed laser beam is irradiated with the pulsed laser beam emitted from the first laser light source to form holes in the surface layer of the processing object. 39. The laser processing method described in item 38 of the scope of patent application, wherein in the above process (0), the continuous wave laser beam emitted by the second laser light source is provided with the substrate to the object to be processed The layer temperature stays preheated below the melting point of the base layer. 40. The laser processing method described in item 38 of the scope of the patent application, wherein in the above-mentioned process (0), the beam point of the continuous wave laser beam is -75. (15) 1221102 includes pulse processing. The target pulse laser light passes the continuous wave laser position ° 41. As in the above, the point of the upper wave laser beam is located at the beam point of the circular laser beam, and the surface of a certain object to be processed is covered by the continuous wave laser beam. The beam spot irradiation position is moved so that the inside of the beam spot of one of the added beams reaches the inside of the laser processing project (0) described in item 40 of the pulse laser application patent range, which is the processing object described above. The beam spot on the surface is set to be circular and the center of the pulsed laser beam shape. Point on the outside to the working point through the beam method, the continuous beam -76-
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