US20200111846A1 - EL Display-Panel Manufacturing Method, EL Display-Panel Manufacturing Apparatus, EL Display panel, and EL Display Device - Google Patents
EL Display-Panel Manufacturing Method, EL Display-Panel Manufacturing Apparatus, EL Display panel, and EL Display Device Download PDFInfo
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- US20200111846A1 US20200111846A1 US16/499,868 US201816499868A US2020111846A1 US 20200111846 A1 US20200111846 A1 US 20200111846A1 US 201816499868 A US201816499868 A US 201816499868A US 2020111846 A1 US2020111846 A1 US 2020111846A1
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Images
Classifications
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
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- G—PHYSICS
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- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/878—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
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- H01L2251/552—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
Definitions
- the present invention relates to EL display panels; in particular it relates to EL display panels and EL display devices, and EL Display-Panel manufacturing methods and EL Display-Panel manufacturing apparatuses including organic electroluminescent (sometimes termed “organic EL” in the following) elements and suited to color-image display.
- organic electroluminescent sometimes termed “organic EL” in the following
- EL display panels in which organic EL elements are arranged in matrix form have been commoditized as displays in smartphones and televisions.
- FIG. 30 is a structural diagram of a conventional EL display panel.
- Banks (sidewalls) 95 are formed alongside pixel electrodes 15 .
- the banks 95 prevent a vapor-deposition fine mask 251 from contacting the pixel electrodes 15 and other constituents.
- EL elements 22 are arranged in matrix form in a display screen 36 (referring to FIG. 2 ).
- the EL elements 22 have an organic-material laminated structure including a hole-transport layer (HTL) 16 , an emitter layer (EML) 17 , and an electron-transport layer (ETL) 18 , and are in a configuration in which the laminated structure is sandwiched between pixel electrodes 15 ( 15 R, 15 B, 15 G) and a light-permeable cathode electrode 19 .
- a source driver circuit 32 (referring to FIG. 2 ) and a gate driver circuit 31 (referring to FIG. 2 ) are surface-mounted into a panel for an EL display to construct an EL display panel.
- FIG. 31 is a diagram for explaining a conventional method for manufacturing an EL display panel.
- vapor-deposition fine masks 251 251 R, 251 G, 251 B are employed.
- the vapor-deposition fine masks 251 are masks constituted from metal or synthetic resins, perforated with holes matched to the corresponding pixel geometry.
- hole-transport layers 16 are formed on the pixel electrodes 15 .
- a red vapor-deposition fine mask 251 R is set into place.
- the red vapor-deposition fine mask 251 R is perforated in locations corresponding to the red pixel electrodes 15 R. It is not perforated in locations corresponding to the pixel electrodes for the other colors (green pixel electrodes 15 G and blue pixel electrodes 15 B).
- red light-emitting-layer material 172 R is vaporized from a vaporization source, and through the perforations in the mask 251 R the red light-emitting-layer material 172 R is deposited onto the red pixels 37 R. Red light-emitting layers 17 R are formed by the deposited red light-emitting layer material.
- a green vapor-deposition fine mask 251 G is set into place as indicated in FIG. 31C , and via the perforations in the mask 251 G, green light-emitting layers 17 G are formed on the green pixels 37 G.
- a blue vapor-deposition fine mask 251 B is set into place as indicated in FIG. 31D , and via the perforations in the mask 251 B, blue light-emitting layers 17 B are formed on the blue pixels 37 B.
- FIG. 31E is an explanatory diagram representing an operation subsequent to that of FIG. 31D .
- Electron-transport layers 18 are deposited over the red, green, and blue light-emitting layers 17 .
- a cathode electrode (cathode) 19 composed of magnesiumsilver (MgAg) etc. is formed onto the electron-transport layers 18 .
- a sealing membrane 20 is formed onto the cathode electrode 19 .
- red, green and blue vapor-deposition fine masks 251 are employed.
- a continuous single-color light-emitting layer 17 is formed in common among pixels 37 for a plurality of colors (referring to FIG. 2 ).
- the light-emitting layer is formed by codeposition of, principally, a guest (dopant) material and a host material.
- the formed light-emitting layer 17 is irradiated with a laser beam that “reforms” the light-emitting layer 17 .
- Reforming may be that the light-emitting layers 17 are quenched, or are rendered non-emitting, or else are rendered practically non-emitting.
- “reforming” may be that the band gap of the guest material is greater than the band gap of the host material, and in terms of the relative dispositions of the highest occupied molecular orbitals (HOMOs) and lowest unoccupied molecular orbitals (LUMO) in the guest material and in the host material, at least one or more of relationships being that in the guest material the HOMOs are lower than in the host material, and that in the guest material the LUMOs are higher than in the host material arises.
- HOMOs highest occupied molecular orbitals
- LUMO lowest unoccupied molecular orbitals
- “reforming” may be causing the guest material to absorb light in the ultraviolet range to make the band gap of the guest material greater than the energy-gap region where visible light is emitted.
- “reforming” may be that the film layers constituting the EL elements 22 , or at least a portion of the components constituting the light-emitting layers 17 , e.g., the guest materials or host materials, produces decomposition or polymerization, or produces change in the molecular structure, altering the physical properties.
- “Reforming” also may be that the film layers constituting the EL elements 22 , for example, the guest materials or host materials for the light-emitting layers 17 , are vaporized etc. to remove the materials from deposited locations. Alternatively, it may be that the film layers constituting the EL elements are removed by being transformed, or by being vaporized.
- “Reforming” in cases where the light-emitting layers 17 are constituted of a single material that is not formed by codeposition of guest materials or host materials may be that at least a portion of the components constituting the EL elements 22 or the light-emitting layers 17 produces decomposition or polymerization, or produces change in the molecular structure, altering the physical properties. It may also be that the light-emitting-layer material is vaporized etc. to remove the material from deposited locations. Alternatively, it may be that the film layers constituting the EL elements 22 are removed by being decomposed, by being transformed, or by being vaporized.
- the present invention forms the light-emitting layers 17 without employing any vapor-deposition fine masks 251 .
- the light-emitting layers 17 are formed in common, continuously in pixels of a plurality of colors.
- the light-emitting layers 17 corresponding to the positions of the pixel electrodes 15 are irradiated with a laser beam 59 or the like to reform the light-emitting layers 17 and change the emission color of the light-emitting layers 17 in the pixels 37 .
- vapor-deposition fine mask 251 Not employing any vapor-deposition fine mask 251 means that microlithography-mask misregistration is not an issue, thanks to which there is no occurrence of color adulteration in the pixels 37 . What is more, since mechanisms and devices for aligning the vapor-deposition fine mask 251 are not necessary, manufacturing apparatus costs may be curtailed. A still further advantage is that with microlithography-mask positioning time being nil, manufacturing Takt time may be shortened.
- FIG. 1 is a sectional structure diagram of an EL display panel in a first embodiment example of the present invention.
- FIG. 2 is equivalent-circuit diagrams for blocks and pixels in an EL display panel of the present invention.
- FIG. 3 is diagrams for explaining an EL Display-Panel manufacturing method of the present invention.
- FIG. 4 is a diagram for explaining a vapor deposition apparatus and a laser device in the manufacture of an EL display panel of the present invention.
- FIG. 5 is a diagram for explaining the laser device in the manufacture of an EL display panel of the present invention.
- FIG. 6 is a diagram for explaining the laser device in the manufacture of an EL display panel of the present invention.
- FIG. 7 is diagrams for explaining an EL Display-Panel manufacturing method of the present invention.
- FIG. 8 is diagrams for explaining an EL Display-Panel manufacturing method of the present invention.
- FIG. 9 is diagrams for explaining an EL Display-Panel manufacturing method of the present invention.
- FIG. 10 is diagrams for explaining operations in the manufacture of the EL display panel in the first embodiment example of the present invention.
- FIG. 11 is diagrams for explaining an EL Display-Panel manufacturing apparatus of the present invention.
- FIG. 12 is diagrams for explaining an optical illuminator in an EL Display-Panel manufacturing apparatus of the present invention.
- FIG. 13 is diagrams for explaining an EL Display-Panel manufacturing apparatus of the present invention.
- FIG. 14 is a sectional structure diagram of an EL display panel in a second embodiment example of the present invention.
- FIG. 15 is diagrams for explaining operations in the manufacture of the EL display panel in the second embodiment example of the present invention.
- FIG. 16 is a sectional structure diagram of an EL display panel in a third embodiment example of the present invention.
- FIG. 17 is diagrams for explaining operations in the manufacture of the EL display panel in the third embodiment example of the present invention.
- FIG. 18 is a diagram for explaining a transfer device in an EL display-panel manufacturing apparatus of the present invention.
- FIG. 19 is a diagram for explaining a method of manufacturing an EL display panel in a fourth embodiment example of the present invention.
- FIG. 20 is a diagram for explaining the method of manufacturing an EL display panel in the fourth embodiment example of the present invention.
- FIG. 21 is diagrams for explaining operations in the manufacture of the EL display panel in the fourth embodiment example of the present invention.
- FIG. 22 is a sectional structure diagram of an EL display panel in a fifth embodiment example of the present invention.
- FIG. 23 is diagrams for explaining operations in the manufacture of the EL display panel in the fifth embodiment example of the present invention.
- FIG. 24 is a sectional structure diagram of an EL display panel in a sixth embodiment example of the present invention.
- FIG. 25 is diagrams for explaining operations in the manufacture of the EL display panel in the sixth embodiment example of the present invention.
- FIG. 26 is a sectional structure diagram of an EL display panel in a seventh embodiment example of the present invention.
- FIG. 27 is diagrams for explaining operations in the manufacture of the EL display panel in the sixth seventh embodiment example of the present invention.
- FIG. 28 is sectional structure diagrams of EL display panels in other embodiment examples of the present invention.
- FIG. 29 is explanatory views of display devices utilizing EL display panels of the present invention.
- FIG. 30 is a sectional structure diagram of a conventional EL display panel.
- FIG. 31 is diagrams for explaining operations in the manufacture of a conventional EL display panel.
- red pixels 37 R, green pixels 37 G, and blue pixels 37 B are arranged in the form of a matrix in a display screen 36 .
- EL display panels and EL display devices of the present invention are not, however, limited to implementations in which the pixels are arranged in the form of a matrix. As long as its display screen 36 has a plurality of color sections, an implementation comes under the technical category of the present invention.
- the display panel may have yellow pixels 37 Y and blue pixels 37 B patterned in a matrix.
- the implementations are not limited to having display panels in which the pixels are arranged in matrix form; they may have an EL display panel that displays predetermined letters/characters and shapes. It is sufficient that the EL display panel have a display unit for a first color and a first display unit for a second color.
- the light-emitting-layer material etc. is reformed by a portion of the display region being irradiated with a laser beam or the like, an EL display panel or the like having light-emitting regions and reformed, non-light-emitting regions also comes under the technical category of the present invention.
- EL-display-panel manufacturing apparatuses or manufacturing methods of the present invention as long as “reforming” is the directing of light onto a portion of the built EL elements 22 and the light-emitting layer 17 to “reform” the locations that are irradiated with the light, the technical concepts of the present invention may be applied to any panel structure and geometry. That the technical concepts may also be applied to, e.g., an EL display panel having a monochrome text display is a matter of course.
- the present invention is described as being that after a light-emitting layer 17 is formed by vapor deposition and associated operations, the light-emitting layer 17 is irradiated with a laser beam, etc. to “reform” the light-emitting layer 17
- the present invention is not thereby limited.
- the light-emitting layer 17 may be irradiated with a laser beam, etc. to “reform” the light-emitting layer 17 even as the EL elements 22 and the light-emitting layer 17 are being formed through vapor deposition and associated operations.
- the irradiation of the light-emitting layers 17 with the laser beam 59 is implemented in a vacuum. It should be understood that the process may be implemented under a nitrogen or argon atmosphere containing 20 ppm or more to 200 ppm or less oxygen. Implementing the reforming within from 20 or more to 200 or less ppm oxygen renders the reforming time shorter-term.
- FIG. 2 is a structural diagram of an EL display panel, and equivalent circuit diagrams for pixels, of the present invention. Red pixels 37 R, green pixels 37 G, and blue pixels 37 B are arranged in matrix form in the display screen 36 .
- Pixel electrodes 15 R and reflective films 12 R are formed in or arranged on the red pixels 37 R; pixel electrodes 15 G and reflective films 12 G are formed in or arranged on the green pixels 37 G; and pixel electrodes 15 B and reflective films 12 B are formed in or arranged on the blue pixels 37 B.
- FIG. 2A is the structural diagram of an EL display panel of the present invention
- FIGS. 2B and 2C are the equivalent circuit diagrams for the pixels 37
- FIG. 2B is an equivalent circuit diagram for cases where the transistors 21 constituting the pixels 37 consist of p-channel transistors
- FIG. 2C is an equivalent circuit diagram for cases where the transistors 21 constituting the pixels 37 consist of n-channel transistors. Both n-channel transistors and p-channel transistors may be utilized to constitute the pixels 37 .
- TFTs 21 a and 21 b In the pixels 37 , thin-film transistors (TFTs) 21 a and 21 b , a capacitor 23 , and an EL element 22 are formed.
- Switching transistor 21 a functions as a switching element that supplies to the gate terminal of driving transistor 21 b a video signal that the source driver circuit 32 outputs.
- the driving transistor 21 b functions as a driving transistor that supplies current to the EL element 22 .
- each pixel 37 the gate terminal of the switching transistor 21 a is connected to a gate-signal line 34 , and the source terminal and the drain terminal of the switching transistor 21 a are connected to a source-signal line 35 and to the gate terminal of the driving transistor 21 b.
- the source terminal and the drain terminal of the driving transistor 21 b are connected to an electrode to which an anode voltage Vdd is applied and to the anode terminal of the EL element 22 .
- the anode terminal of the EL element 22 is connected to the drain terminal and to the source terminal of the driving transistor 21 b , and the cathode terminal of the EL element 22 is connected to a cathode electrode 19 to which a cathode voltage Vss is applied.
- the driving transistors 21 b and the switching transistors 21 a are described as being thin-film transistors, they are not limited to being thin-film transistors and may be transistors formed on a silicon wafer.
- the transistors 21 may be FETs, MOSFETs, MOS transistors, or bipolar transistors.
- the anode electrodes (pixel electrodes) 15 constituting the EL elements 22 as illustrated in FIG. 1 are formed of ITO as a transparent electrode.
- Reflective films 12 are formed on the underlayer of the pixel electrodes 15 .
- the capacitors 23 may be formed with the reflective films 12 and the pixel electrodes 15 being the electrodes. It is not necessary that the reflective film 12 be an electrode, as long as it is a film that reflects light.
- a reflective film consisting of a multilayer membrane as with dichroic mirrors serves to illustrate.
- Varying the film thickness of insulating films 14 in the red, green, and blue pixels 37 makes it possible to vary the storage capacitances C in the red, green, and blue pixels 37 .
- the pixel electrodes 15 are not limited to being transparent electrodes, and may be formed of aluminum, silver, or other metallic material. In that case, the pixel electrodes 15 are rendered reflective films. Also, the reflective films 12 and the pixel electrodes 15 may be formed by lamination.
- insulating films 14 are formed between the pixel electrodes 15 and the reflective films 12 , this is not limiting. As long as it behaves like a light-permeable substance, 14 may be any material. It may for example possess electrical conductivity.
- the pixel electrodes 15 R correspond to the pixels 37 R in FIG. 2 ; likewise, the pixel electrodes 15 G correspond to the pixels 37 G, and the pixel electrodes 15 B correspond to the pixels 37 B.
- the technical concepts behind the manufacturing apparatuses, manufacturing methods, EL display panels, etc. of the present invention are also applicable to bottom-emitting EL elements 22 rendered without reflective films 12 , but with the cathodes 19 as reflecting membranes, and such that light is extracted only from the lower-electrode side.
- the TFT substrate 52 is a glass baseplate on which the transistors 21 , the pixel electrodes 15 , and associated constituents are formed. It should be understood that in some implementations instead of a glass baseplate, the substrate consists of a synthetic resin. It may be, for example, a substrate formed of a polyimide resin. It may also be a substrate onto the planar surface of which a varnish has been coated and hardened. It may likewise be a substrate consisting of a metallic material or a ceramic material.
- the present invention is not limited to EL display panels utilizing a TFT substrate 52 . They may be, for example, simple-matrix EL display panels in which TFTs are not formed, or a text-displaying EL display panels that display fixed letters/characters.
- FIG. 1 is a sectional configuration diagram of an EL display panel of the present invention.
- the pixels 37 made up of the transistors 21 etc. are formed atop the TFT substrate 52 , and over them, a planarizing film 28 made from, as one example, a photosensitive resin is provided.
- the reflective films 12 may be formed on the underlayer of the planarizing film 28 or may be formed above the planarizing film 28 .
- the red pixel electrodes 15 R, green pixel electrodes 15 G, and blue pixel electrodes 15 B are created by forming a transparent conductive film consisting of ITO or IZO atop the planarizing film 28 and patterning the transparent conductive film.
- the pixel electrodes 15 are made electrically conductive with one of the terminals of the driving transistors 21 b through contact holes (not illustrated) in the planarizing film 28 .
- the insulating films 14 formed on the underlayer of each pixel electrode 15 have a film thickness that is for adjusting the optical distance L of the EL elements.
- the present invention is a configuration in which in the insulating films 14 on the underlayers of the pixel electrodes 15 for a plurality of colors, the film thicknesses of any of the insulating films 14 are made dissimilar.
- Optical distance is also referred to as “optical path length.” It is the distance (physical distance) actually that light advances, multiplied by the refractive index. It should be noted that since there are not significant discrepancies in the refractive indices of the substances in each layer constituting the EL elements for each color, for each EL element of a given color the optical distance L and the physical distance are proportional to each other. Therefore, the optical distance L may be replaced with or read by the physical distance.
- the present invention is a configuration in which in an EL display panel that emits a plurality of colors, a plurality of light-emitting layers is formed on the EL elements for at least one color, distinguishing them from the light-emitting layers 17 in the EL elements for the other colors, and the optical distances L are made dissimilar.
- the present invention also is a configuration in which in an EL display panel that emits a plurality of colors, the optical distance L for the EL elements for at least one color is made to differ from the optical distances L for the EL elements for the other colors.
- the principal wavelength ⁇ 1 nm at which the light-emitting layers 17 R (first light-emitting layers) emit light is longer compared to the principal wavelength ⁇ 2 nm at which the light-emitting layer 17 G (second light-emitting layer) emits light.
- the principal wavelength ⁇ 2 is longer compared to the principal wavelength ⁇ 3 nm at which the light-emitting layer 17 B (third light-emitting layer) emits light.
- One example has the color of the light-emitting layer 17 R emission be red, the color of the light-emitting layer 17 G emission be green, and the color of the light-emitting layer 17 B emission be blue.
- a light-emitting layer 17 R, a light-emitting layer 17 G, and a light-emitting layer 17 B are formed onto the red pixel electrodes 15 R.
- the distance L 1 between the reflective film 12 R and the cathode electrode 19 R is the optical distance of the red EL elements 22 .
- a light-emitting layer 17 G and a light-emitting layer 17 B are formed onto the green pixel electrodes 15 G.
- the distance L 2 between the reflective film 12 G and the cathode electrode 19 G is the optical distance of the green EL elements 22 .
- a light-emitting layer 17 G and a light-emitting layer 17 B are formed onto the blue pixel electrodes 15 B.
- the distance L 3 between the reflective film 12 B and the cathode electrode 19 is the optical distance of the blue EL elements 22 .
- a light-emitting layer 17 R, a light-emitting layer 17 G, and a light-emitting layer 17 B are formed in common above the red pixel electrodes 15 R, the green pixel electrodes 15 G, and the blue pixel electrodes 15 B.
- the light-emitting layer 17 R is formed in common and as a continuous film in pixels for a plurality of colors (red pixels 37 R, green pixels 37 G, and blue pixels 37 B).
- the light-emitting layer 17 G is formed in common and as a continuous film in the pixels for a plurality of colors
- the light-emitting layer 17 B is formed in common and as a continuous film in the pixels for a plurality of colors.
- a vapor-deposition coarse mask (not illustrated) is employed to form a light-emitting layer 17 R, a light-emitting layer 17 G, and a light-emitting layer 17 B over the entire display screen 36 .
- the vapor-deposition coarse mask is a mask having an opening for the display screen 36 , while not having openings for the pixel units.
- Red wavelengths are the longest wavelengths; blue wavelengths are the shortest wavelengths; green wavelengths are intermediate between the wavelengths of reds and blues. Accordingly, the optimum optical distances L with the colors are: optical distance L 1 for reds>optical distance L 2 for greens>optical distance L 3 for blues.
- the interference order number nevertheless, with the reds, the greens, and the blues are rendered an identical order number.
- permeable metal films (MgAg) 19 are formed on the electrodes on the light-extraction side, and reflection films 12 are formed on the reverse side from the light-extraction side.
- Silver (Ag) a highly reflective metal, is utilized for the reflective films.
- the interference order number m either 0 or 1 is selected. Implementations where the interference order number is 0 allow the thickness of the film constituting the EL elements to be thin, reducing the amount of organic material used, and allowing changeover to lower cost to be realized. What is more, chromatic shift depending on the view-angle direction is not liable to occur.
- Hole-transport layers 16 are formed on the pixel electrodes 15 .
- Hole injection layers (HILs; not illustrated) may be formed between the pixel electrodes 15 and the hole-transport layers 16 .
- the film thickness of the hole-transport layers 16 on the pixel electrodes 15 may be made to differ among the red, green, and blue pixels 37 .
- a hole-transport layer 16 R is formed atop the pixel electrodes 15 R
- a hole-transport layer 16 G is formed atop the pixel electrodes 15 G
- a hole-transport layer 16 B is formed atop the pixel electrodes 15 B
- the film thicknesses of the respective hole-transport layers 16 are made to differ.
- a red light-emitting layer 17 R, a green light-emitting layer 17 G, and a blue light-emitting layer 17 B are formed over the pixel electrodes 15 .
- the “reformed” light-emitting layers 17 for example, the light-emitting layer 17 R and the light-emitting layer 17 G—include mixtures of host materials and guest materials. In the light-emitting layer 17 R and the light-emitting layer 17 G at least either the host materials or the guest materials differ, and the emission colors differ from each other.
- the light-emitting layer 17 R above the pixel electrodes 15 G and the pixel electrodes 15 B is reformed. Meanwhile, the light-emitting layer 17 G above the pixel electrodes 15 B is also reformed.
- the light-emitting layer 17 R above the pixel electrodes 15 R in FIG. 1 emits in a red color.
- the light-emitting layer 17 R above the pixel electrodes 15 G and the pixel electrodes 15 B does not emit light.
- the light-emitting layer 17 G above the pixel electrodes 15 G emits in a green color.
- the light-emitting layer 17 G above the pixel electrodes 15 B does not emit light.
- the light-emitting layer 17 R above the pixel electrodes 15 R in FIG. 1 contains light-emitting guest material at a concentration that is higher compared to the light-emitting layer 17 R above the pixel electrodes 15 G and the pixel electrodes 15 B.
- the bulk of the guest material that the light-emitting layer 17 R above the pixel electrodes 15 R in FIG. 1 includes is capable of emitting light, while most of the guest material that the light-emitting layer 17 R above the pixel electrodes 15 G and the pixel electrodes 15 B include is quenched or does not undergo excitation.
- at least one of either the hole mobility or the hole-injection efficiency of the light-emitting layer 17 R above the pixel electrodes 15 R is lesser compared to the light-emitting layer 17 R above the pixel electrodes 15 G and the pixel electrodes 15 B.
- the light-emitting layer 17 G above the pixel electrodes 15 R and the pixel electrodes 15 G contains light-emitting guest material at a concentration that is higher compared to the light-emitting layer 17 G above the pixel electrodes 15 B. Most of the guest material in the light-emitting layer 17 G above the pixel electrodes 15 B is quenched or does not undergo excitation.
- the electrical properties of the light-emitting layer 17 G above the pixel electrodes 15 R and the pixel electrodes 15 G differs from those of the light-emitting layer 17 G above the pixel electrodes 15 B. At least one of either the hole mobility or the hole-injection efficiency of the light-emitting layer 17 G above the pixel electrodes 15 R and the pixel electrodes 15 G is lesser compared to the light-emitting layer 17 G above the pixel electrodes 15 B.
- the bulk of the guest material that the light-emitting layer 17 G above the pixel electrodes 15 R and the pixel electrodes 15 G includes is capable of emitting light, while most of the light-emitting-layer 17 G guest material that the light-emitting layer 17 G above the pixel electrodes 15 B includes is quenched or does not undergo excitation.
- At least one of either the light-emitting-layer 17 R hole mobility or hole-injection efficiency of the light-emitting layer 17 R above the pixel electrodes 15 G and the pixel electrodes 15 B is greater compared to the light-emitting layer 17 R above the pixel electrodes 15 R.
- At least one of either the light-emitting-layer 17 G hole mobility or hole-injection efficiency of the light-emitting layer 17 G above the pixel electrodes 15 B is greater compared to the light-emitting layer 17 G above the pixel electrodes 15 R and the pixel electrodes 15 G.
- an EL display panel having EL elements 22 of a structure in which over pixel electrodes 15 , hole-transport layers 16 , light-emitting layers 17 , and electron-transport layers 18 are formed, and cathode electrodes 19 as common electrodes are formed is described to illustrate, this is not limiting.
- the EL display panel may have EL elements 22 of inverse structure in which electron-transport layers 18 , light-emitting layers 17 , and hole-transport layers 16 are formed above the pixel electrodes 15 , and the cathode electrode 19 as a common electrode is built on.
- hole-transport layers would necessarily be replaced with electron-transport layers.
- hole-injection layers would necessarily be replaced with electron-injection layers.
- the EL elements 22 are of inverse structure, in the structural section views of, and in the views for explaining methods of manufacturing, EL display panels of the present invention in FIG. 1 , FIG. 10 , FIG. 14 , FIG. 15 , FIG. 16 , FIG. 17 , FIG. 19 , FIG. 21 , FIG. 22 , FIG. 23 , FIG. 24 , FIG. 25 , FIG. 26 , FIG. 27 , FIG. 28 , etc., the views would necessarily be switched the electron-transport layer 18 for the hole-transport layers 16 , and the hole-transport layers 16 for the electron-transport layers 18 .
- the light-emitting layer 17 R above the pixel electrodes 15 G and the pixel electrodes 15 B is, according to manufacturing methods of the present invention, irradiated with laser light 59 in the ultraviolet region, the violet region, or the blue region. It is principally the guest material in the light-emitting layer 17 R that absorbs the laser light 59 .
- Ultraviolet rays are electromagnetic waves that, being invisible optical rays, are of wavelength from 10 nm to 400 nm, that is, shorter than visible light and longer than soft X-rays.
- Infrared rays are electromagnetic waves whose wavelength is longer (whose frequency is lower) than the reds among visible light rays, and that are of shorter wavelength than radio waves.
- covalently bonded chains in the layers' guest material are severed. Severing the covalently bonded chains in a vapor-deposition chamber 56 free of oxygen leads to the radicals in the covalently bonded chains creating double bonds. Meanwhile, atoms in other of the covalently bonded chains drop out and bond together. Or they create a crosslinked structure with the other of the covalently bonded chains, producing a change in structure. Further, severing of the covalently bonded chains transforms the material into another substance.
- the HOMO and LUMO electric potentials of the guest material in the light-emitting layer 17 R are changed, such that guest material in the light-emitting layer 17 R having been irradiated with a laser beam 59 no longer emits light.
- the laser beam 59 has narrow directivity and satisfactory rectilinearity.
- Light-emitting layers 17 in a predetermined pixel 37 can therefore be selected and irradiated with the laser beam 59 .
- pixels 37 of identical color are arrayed vertically (from the top toward the bottom of the screen) as illustrated in FIG. 7 etc. While the material of the light-emitting layers 17 is deposited also between neighboring pixel electrodes 15 , source signal lines 35 , among other features, are formed between neighboring pixel electrodes 15 . Furthermore, a predetermined spacing exists between neighboring pixels 37 . Accordingly, even if the size of the laser-beam 59 laser spot 91 is large, irradiating of the light-emitting layers 17 in sideways-neighboring pixels is nonexistent.
- Controlling a mirror galvanometer 62 allows the direction along which the laser beam 59 is scanned to be controlled with high speed and accuracy. Further, the laser device 58 is disposed outside the vapor-deposition chamber 56 , therefore facilitating maintenance. The laser beam 59 is generated outside the vapor-deposition chamber 56 , and the generated laser light 59 is optically guided into the vacuum inside the vapor-deposition chamber 56 through a laser window 63 . Accordingly, the vacuum state inside the vapor-deposition chamber 56 may be maintained optimally. It should be noted that the laser device 58 may be disposed within the vapor-deposition chamber 56 .
- a laser beam 59 whose light wavelength is shorter allows thermal impact on the surroundings when the material is processed to be lessened, suiting it to minute processing work, to enable processing work on ultrahigh-definition EL display panels.
- the light-emitting layers 17 etc. can be favorably reformed, coinciding with the geometry of the pixel electrode 15 .
- the laser device 58 is preferably a device whose mode of operation is continuous-wave. With a pulsed-mode laser device 58 , on the other hand, the pulse energy of the laser beam is intense. In implementations where pixels that are irradiated with the laser beam 59 are arranged discretely, as with EL display panels in which the pixels are arranged in matrix form, it is preferable to utilize a pulsed-mode laser device 58 .
- the same location is irradiated with a plurality of pulses. Irradiating the same location with a plurality of pulses averages the energy of the laser light 59 with which that same location is irradiated, making the condition of the reforming uniform.
- the lasing interval between laser pulses preferably is from at least 50 nsec to not more than 5 ⁇ sec.
- the lasing interval between laser pulses preferably is such that the first of the laser pulses puts the light-emitting layer 17 in a semi-dissolved state, and that with the subsequent laser pulse, the light-emitting layer 17 is laser-pulse irradiated before turning solid.
- the same location is irradiated with the laser beam a plurality of times. Irradiating the same location with the laser beam 59 a plurality of times averages the energy of the laser light with which that same location is irradiated, making the condition of the reforming uniform.
- the lasing interval of the laser beam 59 preferably is from at least 50 nsec to not more than 5 pec.
- the lasing interval of the laser beam 59 preferably is such that the first-time irradiating by the laser beam 59 puts the light-emitting layer 17 in a semi-dissolved state, and that the subsequent irradiating by the laser beam 59 is executed before the light-emitting layer 17 turns solid.
- a laser device as one example that can be employed is the laser lift-off (LLO) apparatus commodified by Optopia Co., Ltd.
- the laser-device laser wavelength in the laser lift-off apparatus is 343 nm, and the line beam length is 750 mm.
- the line width is 30 the energy density is 250 mJ/cm 2 , and the pulse width is 15 ns. Accordingly, even with largescale EL display panels, down a one-pixel column (from the upper edge to the lower edge of the screen) the laser beam 59 can be directed onto the one-pixel column with a single laser spot 91 .
- a pulse width for the laser beam 59 of from at least 10 nsec to not more than 80 nsec is appropriate.
- Illustrative as other examples of the laser device 58 are devices utilizing solid-state lasers whose wavelength is 355 nm, and devices utilizing 308-nm excimer lasers.
- EL display-device manufacturing methods of the present invention utilize the laser device 58 to very accurately select the pixels 37 and reform a given light-emitting layer 17 .
- the light intensity of the laser beam 59 per unit area is high. Accordingly, the light-emitting layers 17 etc. can be reformed in a brief time period.
- a vapor-deposition fine mask 251 as with conventional manufacturing methods is not employed. Therefore, the problem of color adulteration in the emission color due to misregistration of the vapor-deposition fine mask 251 does not arise. What is more, the cost of the deposition manufacturing apparatus may be reduced. Since no vapor-deposition fine mask 251 is employed, vapor-deposition fine mask 251 positioning is not necessary, making it possible to curtail manufacturing Takt time.
- irradiating by the laser beam 59 produces a change in the combinatorial state of the guest material and host material in the light-emitting layers 17 .
- Light of wavelength in the ultraviolet region is preferably used for the laser beam 59 .
- Manufacturing methods as well as manufacturing apparatuses of the present invention laser the film layers and the light-emitting layers 17 etc. constituting the EL elements 22 with a laser or other energy beam to reform the layers.
- the EL elements 22 and the light-emitting layers 17 that the laser light 59 has irradiated are quenched, or are rendered non-emitting, or else are rendered practically non-emitting.
- Recombining of electrons and holes is, in the pixels 37 R, caused to occur in the light-emitting layer 17 R primarily.
- the pixels 37 G recombining of electrons and holes is caused to occur in the light-emitting layer 17 G primarily.
- the pixels 37 B it is caused to occur in the light-emitting layer 17 B primarily.
- the pixels 37 R while recombining of electrons and holes occurs in the light-emitting layer 17 R primarily, there is a possibility that recombining arises in the light-emitting layers 17 G and 17 B also. That is, there is a possibility that in the pixel electrodes 15 R, the light-emitting layers 17 R, 17 G, and 17 B each emit light.
- the guest material that the light-emitting layer 17 R includes absorbs the energy by which the light-emitting layer 17 G and the light-emitting layer 17 B undergo excitation and emits light.
- the guest material that the light-emitting layer 17 B includes for the most part does not absorb the energy by which the light-emitting layers 17 R or 17 G undergo excitation, nor thereby emit light.
- the pixels 37 R At least a portion out of the excitation energy that the light-emitting layer 17 B gives off is converted into light having the emission spectrum of the guest material that the light-emitting layer 17 R includes. At least a portion of the energy by which the light-emitting layer 17 G undergoes excitation is converted into light having the emission spectrum of the guest material that the light-emitting layer 17 R includes. Accordingly, with the emission color of the pixels 37 R being approximately equal to the emission color of the light-emitting layer 17 R, the pixels 37 R give off red light.
- the light-emitting layer 17 R above the pixel electrodes 15 G do not contain the optically emitting guest material.
- the light-emitting layer 17 R in the pixels 37 G does not contain the optically emitting guest material, no color conversion occurs in the light-emitting layer 17 R.
- the aforementioned color conversion is produced. Accordingly, with the emission color of the pixel electrodes 15 G being approximately equal to the emission color of the light-emitting layer 17 G, the pixel electrodes 15 G give off green light.
- the light-emitting layers 17 R and 17 G above the pixel electrodes 15 B do not contain the optically emitting guest material, consequently only the light-emitting layer 17 B emits light.
- the pixel electrodes 15 B give off blue light.
- a material that does not readily absorb the laser light 59 is selected, while for the guest material, one that does readily absorb the laser light 59 is.
- a wavelength that the host material does not readily absorb, yet that the guest (dopant) material does readily absorb is selected for the wavelength of the laser light 59 .
- the host material and the guest material are selected to be in a relationship in which, as graphed in FIG. 3A , when the absorptivity of the guest material is at least 75%, the absorptivity of the host material is not greater than 25%.
- the optical absorptances (%) of the guest materials and the host material are normalized and graphed with the optical absorptance when maximum being 100%.
- guest material A is an example of a material having the property that its absorptivity (%) increases at wavelengths of 400 nm or less, and having an absorptivity of at least 75% at the wavelength of the laser beam 59 .
- Guest material B is an example of a material having an ideal absorptivity at, and in the proximity of, the wavelength of the laser light 59 .
- the laser-light wavelength, and the guest material and the host material are selected so that at the wavelength of the laser light 59 , the optical absorptivity of the guest material and the optical absorptivity of the host material are in a relationship where the one is at least three times the other, preferably in a relationship where the one is at least four times the other.
- FIG. 3 It should be understood that the features explanatorily illustrated by FIG. 3 are of course also applicable in other embodiment examples of the present invention.
- the optical absorptivity (%) of the hole-transport layer must also be taken into consideration.
- the light-emitting layers 17 are formed over the hole-transport layers 16 , and the light-emitting layers 17 are irradiated with the laser beam 59 . In some instances, during that process the hole-transport layer 16 may be irradiated with laser light 59 having permeated the light-emitting layers 17 .
- the hole-transport layer 16 absorbing laser light 59 can lead to the possibility of the hole-transport layer 16 undergoing a change in properties.
- a hole-transport layer 16 material is selected so that there will be the sort of relationship as with the host material where, when the laser-light 59 optical absorptivity of the guest material is at least 75%, the laser-light 59 optical absorptivity of the host material is not greater than 25%.
- the present invention is not limited to configurations in which the light-emitting layers 17 are formed from a guest material and a host material. In some implementations, the light-emitting layers 17 are formed by a single material. In implementations where the light-emitting layers 17 are formed by a single material, that single material is reformed.
- a technical concept behind the present invention would be irradiating the organic films forming the EL elements 22 with a laser beam 59 or the like to reform the light-emitting layers 17 etc. Doing so requires a relationship between the laser-light 59 optical absorptivities of the light-emitting layers 17 and of the hole-transport layer material. That is, as indicated in the FIG. 3B graph, the wavelength of the laser light 59 necessitates a relationship between the optical absorptivity (%) of the hole-transport layer and the optical absorptivity (%) of the light-emitting layers 17 .
- a hole-transport layer material so that there will be a relationship where, as graphed in FIG. 3B , when the laser-light 59 optical absorptivity of the material in the light-emitting layers 17 is at least 75%, the laser-light 59 optical absorptivity of the hole-transport layer material is not greater than 25%.
- light-emitting layer material A is an example of a material having the property that its absorptivity (%) increases at wavelengths of 400 nm or less, and having an absorptivity of at least 75% at the wavelength of the laser beam 59 .
- Light-emitting layer material B is an example of a material having an ideal absorptivity at, and in the proximity of, the wavelength of the laser light 59 .
- the laser light wavelength, the light-emitting layer material, and the hole-transport layer material are selected so that at the wavelength of the laser beam 59 , the relationship between the optical absorptivity of the light-emitting layers 17 and the optical absorptivity of the hole-transport layers will be three times or greater.
- the red light-emitting layer 17 R emits red light.
- the green light-emitting layer 17 G and the blue light-emitting layer 17 B do not emit light.
- the red light-emitting layer 17 R is “emitting,” the green light-emitting layer 17 G is “quenched,” and the blue light-emitting layer 17 B is “quenched.”
- the green light-emitting layer 17 G emits green light.
- the red light-emitting layer 17 R and the blue light-emitting layer 17 B do not emit light.
- the red light-emitting layer 17 R is “quenched,” the green light-emitting layer 17 G is “emitting,” and the blue light-emitting layer 17 B is “quenched.”
- the blue light-emitting layer 17 B emits blue light.
- the red light-emitting layer 17 R and the blue light-emitting layer 17 B do not emit light.
- the red light-emitting layer 17 R is “quenched,” the green light-emitting layer 17 G is “quenched,” and the blue light-emitting layer 17 B is “emitting.”
- a material having an energy band gap larger than that of the light-emitting layers 17 is utilized.
- Illustrative of such materials are, e.g., TPD, ⁇ -NPD, NBP, and TCTA.
- the hole injection layer has a HOMO level between the HOMO level of the hole-transport layer 16 and the work function of the anode, and functions to lower the injection barrier to tunneling from the anode to the organic layer.
- Electron-transport layers 18 are formed over the light-emitting layers 17 . Electron-injection layers (EILs; not depicted) may be formed between the electron-transport layers 18 and the cathode electrodes 19 .
- the types of electron-transport layer 18 may be made distinct among the red pixels 37 R, the green pixels 37 G, and the blue pixels 37 B.
- the electron-transport layers 18 possess functionality for injecting and transporting electrons from the cathode electrodes (cathodes) 19 .
- a material having a wide band gap is likewise preferable.
- materials for the electron-transport layer 18 tris(8-hydroxyquinolinato)aluminum (Alq3), or derivatives or metallic coordination complexes thereof may be cited as examples.
- the light-emitting layers 17 are regions where when a voltage is applied to the pixel electrodes (anodes) 15 and the cathode electrodes (cathodes) 19 , holes injected from the anode side and electrons injected from the cathode side recombine.
- the light-emitting layers may be constituted by single layers composed of one type or two or more types of these light-emitting materials, or may be a laminate of light-emitting layers composed of a chemical compound of a type different from that or those of the single-layer light-emitting layers.
- the emission light having caused multiplex interference between the light-reflecting surface of the cathodes 19 and the light-reflecting surface of the reflecting films 12 , constituted to be semitransparent/semi-reflective, is extracted from the cathode 19 side.
- the optical distance L between the light-reflecting surface of the reflecting films 12 and the light-reflecting surfaces on the cathode 19 side is defined by the wavelength of light whose extraction is desired, with the film thickness and interference conditions for each layer being determined so as to satisfy this optical distance L.
- the insulating films 14 in the red pixels 37 R, the green pixels 37 G, and the blue pixels 37 B are adjusted so as to create optical distances L in the red pixels 37 R, the green pixels 37 G, and the blue pixels 37 B whereby optical cavity effects are maximally exhibited.
- the present invention is not thereby limited.
- FIG. 28A is an embodiment example in which the interference order number in the red (R) pixels and the green (G) pixels are created at the zeroth order, and the interference order number in the blue (B) pixels at the first order.
- the film thicknesses of the insulating films 14 are formed differentiating by red (R) pixels and green (G) pixels. Further, the hole-transport layers (HTL) in the blue (B) pixels are formed thicker.
- the hole-transport layers are not formed by a single-cycle deposition, but are formed by a plural-cycle depositions. Also, the hole-transport layers formed by plural-cycle depositions may be created with differing hole-transport layer materials.
- the cavity-effect exhibiting optical distances L are made proportional to the emission wavelengths. Red wavelengths are longer than green wavelengths, and green wavelengths are longer than blue wavelengths. Accordingly, given that the interference order numbers are identical, the red optical distance L 1 is longer than the green optical distance L 2 , and the green optical distance L 2 is longer than the blue optical distance L 3 .
- the film thickness of the EL elements 22 is on the order of 100 nm. Given that the interference order number is the zeroth order, the film thickness of the blue pixels 37 B will be thinnest. A thin optical distance L is liable to give rise to defects due to dust and the like during manufacturing. Consequently, compared with the red pixels 37 R, the occurrence of defects in the blue pixels 37 B is frequent, such that EL display-panel yields are degraded by defects in the blue pixels 37 B.
- the present invention is not thereby limited, and as in FIG. 28B , the interference order numbers for the red (R) pixels, the green (G) pixels, and the blue (B) pixels all together may be made the first order.
- configurations differentiating film thicknesses in the red (R) pixels, the green (G) pixels, and the blue (B) pixels are not limited to a film layer in common to each; in the red (R) pixels it may be the transport layer (HTL); in the green (G) pixels it may be the light-emitting layer (EML); and in the blue (B) pixels it may be the insulating film 14 B.
- the interference order number in the red (R) pixels, the green (G) pixels, and the blue (B) pixels may be the same, as indicated in FIG. 28C , and the optical distance L may be adjusted with a film layer in common among them.
- FIG. 28C is an embodiment example in which the interference order number for the red (R) pixels, the green (G) pixels, and the blue (B) pixels is made in common the zeroth order, and in which the insulating films in the red (R) pixels, the green (G) pixels, and the blue (B) pixels are differentiated to realize optimal optical cavity effects, realizing ideal color reproducibility.
- the blue (B) pixels may adequately lack an insulating film.
- the reflective films 12 B and the pixel electrodes 15 B are stacked together.
- the interference order numbers in the red (R) pixels, the green (G) pixels, and the blue (B) pixels may be differentiated, with the interference order number in a plurality of the colors being the first order.
- the red (R) pixels have an interference order number that is the zeroth order
- the green (G) pixels and blue (B) pixels have an interference order number that is the first order.
- the light-emitting layer 17 G is formed thicker
- the blue (B) pixels the insulating films 14 B are formed thicker.
- Banks (sidewalls) 95 are formed on the perimeter of the pixel electrodes 15 .
- the banks 95 are created with the objective, primarily, of preventing the vapor-deposition fine masks 251 from coming into contact with the pixel electrodes 15 and like features when the vapor-deposition fine masks 251 are set into place, and of preventing the light-emitting layers 17 between neighboring pixels from becoming intermixed.
- the manufacturing apparatuses, manufacturing methods, EL display panels etc., of the present invention have been describing, as an illustrative example, a top-emitting type EL panel in which reflective films 12 are formed, and light generated in the light-emitting layers 17 is extracted through the transparent cathode-electrode 19 side.
- the present invention is not thereby limited, however, and may be applied to a bottom-emitting EL display panel rendered to have the cathodes 19 be reflective films, so that light is extracted only from the lower electrode side.
- FIG. 4 is a configurational diagram and an explanatory diagram of a vapor deposition apparatus for an EL display-panel manufacturing apparatus of the present invention.
- An EL display-panel deposition apparatus of the present invention has a deposition chamber 56 furnished with a metal evaporation source 65 and an organic evaporation source 66 .
- the deposition chamber 56 is furnished with a sliding stage 51 for retaining the TFT substrate 52 , a temperature-adjusting plate 53 for retaining the TFT substrate 52 at or adjusting it to a predetermined temperature, a vacuum pump (vacuum exhaust device) 54 , and an exhaust duct 55 that ties the vacuum pump 54 and the vapor-deposition chamber 56 .
- the vacuum levels in the vapor-deposition chamber 56 , a transfer device chamber 117 , and a laser device chamber 118 preferably are kept down to a level of at least 1 ⁇ 10′ Pa vacuum. More preferably, maintaining the chambers at vacuum level of at least 1 ⁇ 10′ Pa is favorable.
- organic materials of two kinds may be made into films by codeposition, a plurality of vapor-deposition power sources and film-thickness gauges for the host material and for the guest material are installed.
- the intensity of the laser beam 59 is adjusted with an optical density filter 60 , as indicated in FIG. 4 .
- a laser beam 59 in the ultraviolet wavelength region is adopted.
- the features relating to the laser device 58 , explanatorily illustrated by FIG. 4 etc., may be applied as a device, explanatorily illustrated by FIG. 20 , for removing deposits 201 or a device for reforming deposits 201 .
- variable attenuator employing a polarizing beam splitter illustrates an example.
- the transmittance (reflectance) is changed by rotating a V 2 wave plate that is in front of the polarizing beam splitter.
- the laser beam 59 that the laser device 58 generates is shaped with a cylindrical lens 61 to be rectangular or elliptical as required.
- the beam is also shaped with a slit mask to be roughly rectangular or circular to match it approximately to the pixel geometry.
- the laser light 59 is incident on the mirror galvanometer 62 .
- the mirror galvanometer 62 scans the laser beam 59 over an xy two-dimensional area (the TFT substrate 52 or a donor film 197 ).
- a couple of motors that scan the laser beam 59 in the x- and y-axis directions are employed.
- the laser beam 59 enters the vapor-deposition chamber 56 through a laser window 63 disposed in the vapor-deposition chamber 56 .
- the laser beam 59 is shone onto the TFT substrate 52 in a high-vacuum state.
- the laser window 63 is formed of quartz glass.
- the laser device 58 is disposed within the atmosphere external to the vapor-deposition chamber 56 , where the laser beam 59 is introduced through the laser window 63 into the vacuum within the vapor-deposition chamber 56 . Accordingly, operation and maintenance of the laser device 58 are facilitated.
- An f ⁇ (f-theta) lens 64 is deployed as a lens for focusing the laser beam 59 onto the TFT substrate 52 .
- the lens is designed so that the scanning speed will be constant along the lens periphery and in its center.
- the direction of the laser beam 59 generated by the laser device 58 is varied by the mirror galvanometer 62 , and through the f ⁇ lens 64 , the laser beam is cast onto the surface of the TFT substrate 52 or the donor film 197 .
- the position of the f ⁇ lens 64 is changed along the interval from f ⁇ lens 64 a to f ⁇ lens 64 b as required.
- the focus position of the laser beam 59 may be varied.
- the position of the sliding stage 51 is changed along the interval from sliding stage 51 a to sliding stage 51 b .
- the focus position of the laser beam 59 may be varied. Changing the focus position allows the lasing coverage by the laser beam 59 and the size of laser spot 91 to be varied.
- FIGS. 5 and 6 are explanatory diagrams for describing a method for reforming the light-emitting layer 17 etc. by means of the laser device 58 .
- an apparatus for carrying out reforming includes a beam detection device 77 and a beam control device 78 .
- the laser device 58 generates a laser beam 59 .
- the laser beam 59 is incident on a beam-splitting mirror 72 b .
- the beam-splitting mirror 72 b functions like a half-silvered mirror, for monitoring the intensity of the laser light 59 generated by the laser device 58 .
- the beam-splitting mirror 72 b reflects a predetermined proportion of the laser light from the laser beam 59 .
- the laser light 59 b reflected by the beam-splitting mirror 72 b is reflected by a mirror 73 b , concentrated by a lens 74 c , and incident on an optical amplifier circuit 76 b.
- FIG. 6B is a circuit diagram of the optical amplifier circuit 76 .
- the optical amplifier circuit 76 includes a photodiode (PD), an operational amplifier 81 , resistors R, a capacitor C, and associated components.
- the laser light 59 b is photoelectrically converted by the photodiode (PD).
- the laser light having been photoelectrically converted is amplified and turned into an analog signal voltage V 2 .
- the analog signal voltage V 2 is converted into a digital signal by an A/D conversion circuit 80 b , which is input into a laser control circuit 79 .
- the laser control circuit 79 detecting the relative strength of the laser beam 59 , feedback-controls the laser device 58 so that the beam strength will be a predetermined intensity setting or within a predetermined intensity range.
- the feedback control conditions the intensity of the laser beam 59 to be within a predetermined settings range.
- the beam-splitting mirror 72 a functions as a spectrally selective mirror.
- a multilayer optical film is formed on the front side of the beam-splitting mirror 72 a and has the functions of transmitting wavelengths in a given band as well as reflecting wavelengths in a given band.
- the beam-splitting mirror 72 a transmits the laser light 59 a and reflects fluorescent/phosphorescent-wavelength light 71 from excitation in the light-emitting layer 17 .
- the fluorescent/phosphorescent-spectrum light 71 is concentrated by a lens 74 a , its direction is bent by a mirror 73 a , and it is concentrated by a lens 74 b .
- An optical filter 75 transmits only wavelengths within a fixed range among those of the concentrated light 71 .
- the optical filter 75 is employed to undergo excitation and detect the optical intensity of the generated wavelengths within a predetermined band range.
- the optical amplifier circuit 76 a photoelectrically converts the light 71 .
- the photoelectrically converted radiant energy 71 is amplified and made into an analog signal voltage V 1 .
- the analog signal voltage V 1 is converted into a digital signal by an A/D conversion circuit 80 a and input into the laser control circuit 79 .
- the laser control circuit 79 detects the relative strength of the fluorescent- or phosphorescent-spectrum light 71 and detects whether the light is at a predetermined intensity setting or within a predetermined intensity range, and if the light is at the predetermined intensity setting or within the predetermined intensity range, the laser device 58 changes or shifts the lasing position of the irradiating laser beam 59 a . It also changes the intensity of the laser beam 59 a.
- the laser beam 59 a is directed onto the deposited light-emitting layer 17 , whereby undergoing excitation, the light-emitting layer 17 emits fluorescent/phosphorescent light 71 .
- the laser beam 59 a reforms the irradiated light-emitting layer 17 . Reforming the light-emitting layer 17 lowers the intensity of the fluorescence/phosphorescence 71 that the light-emitting layer 17 generates.
- the laser beam 59 a dually possesses the functions of both exciting the light-emitting layer 17 and reforming the light-emitting layer 17 . Especially, because it is light within the ultraviolet region, the laser beam 59 a readily excites the light-emitting layer 17 .
- the wavelength of the laser beam 59 a is fixed, it can be readily separated from the wavelengths of the generated fluorescence/phosphorescence 71 . That means that the fluorescent/phosphorescent light 71 is easy detected. Further, the fact that the beam detection device 77 is equipped with the optical filter 75 and the beam-splitting mirror 72 a , as illustrated in FIG. 6 , for separating the fluorescence/phosphorescence 71 facilitates detection.
- the transmission wavelength of the optical filter 75 is switched to correspond to the wavelength of the fluorescence/phosphorescence 71 that the light-emitting layers 17 generates. This is because the amplification factor of the optical amplifier circuit 76 a differs with the wavelength/intensity of the fluorescence/phosphorescence 71 that the light-emitting layers 17 emit.
- the wavelength/intensity of the fluorescence/phosphorescence 71 that the light-emitting layer 17 R emits the wavelength/intensity of the fluorescence/phosphorescence 71 that the light-emitting layer 17 G emits, and the wavelength/intensity of the fluorescence/phosphorescence 71 that the light-emitting layer 17 B emits differ, they are controlled to optimum values corresponding to the fluorescence/phosphorescence 71 of each light-emitting layer 17 .
- Measuring or detecting the intensity of the fluorescence/phosphorescence 71 allows the status of the reforming of the light-emitting layer 17 to be grasped. Once the reforming status has exceeded a predetermined set value, the reforming of the pixel 37 that is the object of irradiating by the laser beam 59 a is determined to be completed, and the laser beam 59 a is operated to position it onto the next pixel to be reformed.
- the beam detection device 77 and the beam control device 78 are attached to the same component. Accordingly, along with the movement of the lasing position of the laser beam 59 , the beam detection device 77 also moves at the same time. It will be appreciated, however, that the beam detection device 77 may be installed inside the vapor deposition chamber 56 , while the beam control device 78 may be installed outside the vapor deposition chamber 56 .
- the optical amplifier circuit 76 may be situated at the rear side of the TFT substrate 52 .
- Laser light 59 c would be detected by an optical amplifier circuit 76 c disposed to the rear of the TFT substrate 52 .
- fluorescence/phosphorescence 71 a would detected by the optical amplifier circuit 76 c situated along the rear side of the TFT substrate 52 .
- the beam detection device 77 is configured so that the angle ⁇ of the lenses 74 that detecting the fluorescence/phosphorescence 71 , as indicated in FIG. 6C , may be variable. Varying of the angle ⁇ is conveyed out by a control device installed outside the vapor deposition chamber 56 . The angle ⁇ is automatically adjusted to an angle at which the fluorescence/phosphorescence 71 can be detected most strongly.
- the positions of the lenses 74 a to 74 b and the beam detection devices 77 a to 77 b are varied or set so that the intensity of the fluorescence/phosphorescence 71 can be detected most strongly.
- the beam detection device 77 be configured so that it may discriminate not only the intensity but also the wavelength of the fluorescence/phosphorescence 71 . For example, the proportion to which the reds' emission wavelength has changed into greens' emission wavelength, or the amount of the change is detected. If it has changed into greens' emission wavelength, reds' emission wavelength resultantly is put into a “quenched” state and may be detected as having become non-emitting.
- light for exciting the light-emitting layers 17 may be separately generated, and the light-emitting layer 17 G may be irradiated with the light.
- An example that illustrates is a configuration in which a laser-beam 59 generation device for fluorescent/phosphorescent emission is set up separately, and in which the laser beam 59 is directed onto the light-emitting layers 17 being reformed.
- the light-emitting layer 17 When the intensity of the generated fluorescence/phosphorescence 71 goes to a predetermined value or less, the light-emitting layer 17 has been put into a quenched state. With the layer having been put into a quenched state, the reforming of the light-emitting layer 17 G is determined to be completed, and the lasing position of the laser beam 59 a is shifted to the next pixel. Further, the time necessary for the reforming is gauged, whereby the intensity of the laser beam 59 a is controlled.
- Monitoring the intensity/wavelength of the fluorescence/phosphorescence 71 with the beam detection device 77 makes it possible to put the light-emitting layer 17 in the pixel that is the object of the reforming very precisely into a quenched state. And because monitoring, with the beam control device 78 , the intensity of the laser beam 59 that the laser device 58 outputs makes it possible to put the intensity of the laser light directed onto the light-emitting layer 17 at a stabilized, constant setting, the light-emitting layer 17 in the pixel that is the reform target can be put very precisely into a quenched state.
- the laser device 58 has the function of generating light of wavelength from at least 310 nm to not more than 400 nm in the ultraviolet-A (UV-A) proximity, and of directing the generated light onto a predetermined pixel electrode 15 .
- UV-A ultraviolet-A
- ultraviolet-ray generating laser devices can perform photolytic processing in which irradiating materials (mainly organic substances) that possess areas where the bonds are weak directly dissociates the molecular bonds.
- photolytic processing since the energy striking a workpiece does not heat it, but is used chiefly by the decomposition, the processed surface is left extremely keen.
- laser devices that generate light having wavelengths in the ultraviolet region ultraviolet lasers (frequency-tripled and frequency-quadrupled YAG lasers), solid-state ultraviolet lasers, and excimer lasers illustrate some examples.
- the laser beam 59 can be concentrated and directed onto the process site makes it possible readily to reform or vaporize organic material etc. in the process site. Thanks to the vaporizing of the organic material etc. being conveyed out within a vacuum, carbonizing of the organic material is nonexistent, and there is no impact on the area surrounding the site irradiated with the laser beam.
- the configuration is preferably such that laser beam 59 may be shone onto the TFT substrate 52 from above it. Despite the guest material being heated by the laser beam 59 and the heated guest material sublimating, clinging of the material onto the surrounding area can be kept to a minimum.
- a femtosecond laser device may be utilized for the laser device 58 .
- a femtosecond laser device a pulse laser, is laser device whose pulse width is at the femtosecond level.
- femtosecond laser devices are characterized by nonthermal processes.
- a CO 2 laser beam or a YAG laser beam strikes a processing-target object, it is worked by the object's molecules absorbing the photoenergy and vibrating, and by the light energy being converted into thermal energy melting and vaporizing the object.
- manufacturing processes can be done by virtue of a phenomenon called “ablation” in which molecular bonds are severed by the photoenergy and the molecules are removed without thermally diffusing to the peripheral regions. Accordingly, only the location irradiated with the laser beam 59 is reformed, with the periphery not being thermally influenced or affected.
- the laser-spot size, as indicated by the laser spot 91 a in FIG. 7 , of the laser beam 59 could be smaller than the pixel electrodes 15 . This is because the entire area of a pixel electrode 15 can be irradiated with the laser beam 59 a by shifting the laser spot 91 a within the pixel electrode 15 .
- the distribution of the laser beam 59 a intensity is a Gaussian distribution. If the entirety of the location that is reformed is irradiated with the laser beam 59 , it is preferable that as graphed in FIG. 7B , the span W 1 at intensity 63% in the Gaussian distribution of the laser beam 59 a be made the width of the light-emitting layer 17 to be reformed. More preferably, the span W 2 at intensity 80% in the Gaussian distribution of the laser light 59 a is favorably set to the width of the light-emitting layer 17 to be reformed.
- the guest material in the light-emitting layers 17 may be reformed or vaporized by the laser device 58 generating and controlling the intensity of the laser beam 59 directed onto the TFT substrate 52 .
- Varying of the laser beam 59 a intensity takes place in the optical density filter 60 .
- the optical density filter 60 preferably is constituted so that the intensity of the laser beam 59 a may be varied in units of the laser beam 59 a pulses.
- Laser spot 91 b is of geometry whereby a single pixel electrode 15 is irradiated over its entire range.
- Laser spot 91 c is of geometry whereby a plurality of pixel electrodes 15 is irradiated simultaneously.
- the laser spot 91 from the laser beam 59 is directed onto a pixel 37 to be reformed, and the position of the laser spot 91 is shifted to reform the light-emitting-layer guest material or host material in the pixel 37 .
- the host material and the guest material that form the light-emitting layer 17 are vaporized.
- the horizontal width of the pixels 37 being a narrow 30 ⁇ m or less, in some cases directing the laser-beam 59 laser spot 91 onto a pixel 37 irradiates a neighboring column of pixels 37 with the laser light.
- a slit mask 92 as illustrated in FIG. 8 is employed to make it so that the neighboring pixel columns are not irradiated with the laser light 59 .
- the laser beam 59 is directed onto the light-emitting layer 17 .
- the laser spot 91 a is scanned in the a-direction, whereby the pixels down the pixel column are reformed in sequence.
- the laser beam 59 is directed onto the light-emitting layer 17 .
- the laser spot 91 a is scanned in the b-direction, whereby the pixels down the pixel column are reformed in sequence.
- the laser beam 59 is directed onto the light-emitting layer 17 .
- the rectangular laser spot 91 c simultaneously lasers the pixels in a single row of the display screen 36 .
- the light-emitting layers 17 in the pixel example that the laser light 59 irradiates the light-emitting layers 17 in the pixels of a single row are simultaneously reformed.
- the slit mask 92 is shifted to accord with the travel of the laser spot 91 , reforming the light-emitting layer 17 in a predetermined-color pixel in the display screen 36 .
- the laser spot 91 is shifted to align with the position of the hole in the slit mask, to reform the light-emitting layer 17 in a predetermined-color pixel in the display screen 36 .
- the slit mask 92 is formed by a thin metal membrane or a synthetic resin film. For this reason, because the slit mask 92 is situated to correspond to the position of the pixels 37 , it is necessary to place the mask under tension and retain it in a planar condition.
- a transparent substrate 94 on which is formed a slit-patterned sheet 93 of metal or other suitable material may be utilized.
- a baseplate that transmits the laser beam 59 or other light of wavelength in the ultraviolet region is employed.
- quartz glass, soda-lime glass, and the like illustrate examples.
- the laser beam 59 is directed onto the light-emitting layer 17 .
- the laser beam 59 penetrating the slit openings is of rectangular form and simultaneously illuminates the pixels in a single row of the display screen 36 .
- the light-emitting layers 17 in the pixel example that the laser light 59 irradiates the light-emitting layers 17 in the pixels of a single row are simultaneously reformed
- FIG. 10 is a diagram for explaining the EL display-panel manufacturing method of the present invention in the first embodiment example.
- FIG. 11 is also a diagram for explaining the EL display-panel manufacturing method of the present invention.
- the TFT substrate 52 is set into place in a vacuum state such as in the vapor deposition chamber 56 .
- Each of the organic films constituting the EL elements 22 is formed by vapor deposition.
- the TFT substrate 52 is conveyed into the film-forming tool 116 from a convey-in chamber 113 .
- the film-forming tool 116 interior is maintained in an ultra-vacuum state.
- a transport robot (not illustrated) that conveys TFTs to compartment chambers 111 , as well as conveys them out of the compartment chambers 111 .
- the transfer robot conveys the sliding stage 51 with associated components out from a compartment chamber 111 , changes its direction, and conveys it into a compartment chamber 111 for a subsequent process operation.
- the laser device 58 for reforming the light-emitting layers 17 etc. is installed inside the laser device chamber 118 , wherein the TFT substrate 52 is conveyed into the laser device chamber 118 via a load-lock (LL) chamber. Following formation of the cathode electrodes 19 on the TFT substrate 52 or following sealing of the substrate with a sealing membrane 20 and a sealing film 27 , the substrate is conveyed out from a convey-out chamber 114 .
- LL load-lock
- the TFT substrate 52 is conveyed into a hole-transport-layer 16 deposition chamber (HTL) 111 c .
- HTL hole-transport-layer 16 deposition chamber
- the hole-transport layer 16 is formed over the pixel electrodes 15 on the TFT substrate 52 .
- the TFT substrate 52 is conveyed into a compartment chamber (EML (R)) 111 d where emission-layers (EML) R are deposited.
- EML emission-layers
- the light-emitting layer 17 R is laminated onto the hole-transport layers 16 .
- the light-emitting layer 17 R is formed by codeposition of a host material and a red guest material.
- a vapor-deposition fine mask 251 R provided with openings in positions corresponding to the pixels 37 R is not employed.
- the light-emitting layer 17 R is formed as a continuous film on the entire display screen 36 by the employing of a vapor deposition technique. That is, the light-emitting layer 17 R is formed continuously and in common on the pixel electrodes 15 R, the pixel electrodes 15 G, and the pixel electrodes 15 B.
- a vapor-deposition coarse mask (not depicted) having an opening for the display screen 36 is employed so that the light-emitting layer 17 R will be vapor-deposited inside the display screen 36 .
- the banks 95 are depicted, but the banks 95 are not necessarily required constituent elements.
- the banks 95 formed onto the source signal lines 35 , onto the gate signal lines 34 , and on the periphery of the pixel electrodes 15 , exhibit an electric-field shielding effect.
- the banks formed of a material into which pigments and dyes that absorb visible light has been added.
- the TFT substrate 52 in the central chamber 115 is directionally switched around by the transport robot, then is conveyed into the laser device chamber 118 via the load-lock chamber 112 .
- the laser device chamber 118 irradiating of the light-emitting layer 17 on the TFT substrate 52 with the laser beam 59 a is carried out, as indicated in FIG. 10B .
- the laser beam 59 a is directed onto the light-emitting layer 17 R where it is above the pixel electrodes 15 G and the pixel electrodes 15 B.
- the laser beam 59 a is not directed onto the light-emitting layer 17 R where it is above the pixel electrodes 15 R. Reformed with the lasing portion of the laser beam 59 a , the light-emitting layer 17 R is made into reformed sections 96 a.
- the covalently bonded chains in the guest material in the light-emitting layer 17 R over the pixel electrodes 15 G and the pixel electrodes 15 B are severed.
- the oxygen-free deposition chamber 56 when the covalently bonded chains break, radicals from the covalently bonded chains, creating double bonds, stripping away and bonding with atoms from other covalently bonded chains, and otherwise creating crosslinked structures with other covalently bonded chains, produce change in structure.
- the guest material in the light-emitting layer 17 R corresponding to the pixel electrodes 15 R is not irradiated with the laser beam 59 a . Accordingly, as a light-emitting guest material its capacity is maintained.
- each organic film by which the EL elements 22 are built is described as being formed by a vapor deposition technique, but the implementations are not thereby limited.
- the electron-transport layers 18 , the hole-transport layers 16 , and the light-emitting layers 17 etc. may be formed by an inkjet scheme or a printing scheme.
- a host material and a guest material are dissolved in a solvent and by an inkjet scheme are formed over the pixel electrodes 15 as the light-emitting layer 17 .
- the present invention has had it that, for the sake of facilitating comprehension, the light-emitting layers 17 are reformed principally by the guest material absorbing light, it is not thereby limited.
- Procedures whereby, as well as EL display-panels (devices) in which, the light-emitting layer 17 is formed of a solitary organic film such as Alq 3 , for example, in which case the solitary organic film is irradiated with light to reform the solitary organic film also come under the technical category of the present invention.
- procedures whereby, as well as EL display-panels (devices) in which, the hole-transport layers etc. are reformed by being irradiated with the laser beam 59 also come under the technical category of the present invention.
- the laser beam 59 is ultraviolet light having a wavelength ⁇ of from at least 300 nm to not more than 420 nm. More preferably, the laser beam 59 is ultraviolet light having a wavelength ⁇ of from at least 310 nm to not more than 400 nm.
- the TFT substrate 52 is conveyed into the central chamber 115 via the load-lock chamber 112 , then conveyed into the compartment chamber (EML (G)) 111 b .
- the compartment chamber 111 b the light-emitting layer 17 G is laminated over the light-emitting layer 17 R, as illustrated in FIG. 10C , by a vapor deposition technique.
- a vapor-deposition fine mask 251 R is not employed.
- a vapor-deposition coarse mask (not depicted) is employed to deposit the light-emitting layer 17 G on the display screen 36 in the display panel. Accordingly, the light-emitting layer 17 G is formed in common above the pixel electrodes 15 R, the pixel electrodes 15 G, and the pixel electrodes 15 B.
- the TFT substrate 52 in the central chamber 115 is directionally switched around by the transport robot, then is conveyed into the laser device chamber 118 via the load-lock chamber 112 .
- the laser device chamber 118 irradiating of the light-emitting layer 17 G on the TFT substrate 52 with the laser beam 59 b is carried out, as indicated in FIG. 10D .
- the laser beam 59 b is directed onto the light-emitting layer 17 G where it is above the pixel electrodes 15 B.
- the laser beam 59 b is not directed onto the light-emitting layer 17 G where it is above the pixel electrodes 15 R and the pixel electrodes 15 G. Reformed by the lasing portion of the laser beam 59 b , the light-emitting layer 17 G is made into reformed sections 96 b.
- the excitation energy of the guest material in the light-emitting layer 17 G is greater compared with that of the guest material in the light-emitting layer 17 R.
- a guest material whose excitation energy is greater can mean that the wavelengths absorbed will be shorter.
- a laser beam whose wavelength is shorter than that of the laser beam 59 a is selected.
- the laser beam 59 b is ultraviolet light of wavelength ⁇ from at least 300 nm to not more than 380 nm.
- the laser beam 59 a is ultraviolet light of wavelength ⁇ from at least 310 nm to not more than 400 nm.
- the wavelengths of the laser beam 59 a and the laser beam 59 b may be the same, while the per-unit-surface-area intensities of the laser beam 59 a and the laser beam 59 b are made to differ.
- the light-emitting layer 17 G where it is above the pixels 37 B (pixel electrodes 15 B) is reformed.
- the light-emitting layer 17 G where it is above the pixels 37 B (pixel electrodes 15 B) is made into reformed sections 96 b . Consequently, having been reformed the guest material in the light-emitting layer 17 G may not undergo excitation.
- the light-emitting layer 17 G behaves as a host material.
- the light-emitting layer 17 R above the pixel electrodes 15 G is set forth as being reformed sections 96 a
- the light-emitting layer 17 G above the pixel electrodes 15 B is set forth as being reformed sections 96 b
- the reformed sections 96 a and the reformed sections 96 b differ in their guest and associated materials and frequently differ physically or in terms of physical properties. Nevertheless, it often happens that the physical properties of the reformed sections 96 a and of the reformed sections 96 b are the same or are similar. Accordingly, the reformed sections 96 a and the reformed sections 96 b may be assumed to be the same and be “reformed sections 96 .”
- the TFT substrate 52 is conveyed into the compartment chamber (EML (B) ETL) 111 e , as illustrated in FIG. 11A , via the central chamber 115 .
- the light-emitting layer 17 B is laminated over the light-emitting layer 17 G.
- a host material and a blue-light-emitting guest material within a vacuum are co-deposited and laminated onto the light-emitting layer 17 G by vacuum vapor deposition.
- a vapor-deposition fine mask 251 R is not employed.
- a vapor-deposition coarse mask (not depicted) is employed to deposit the light-emitting layer 17 B on the entirety of the display screen 36 in the display panel. Accordingly, the light-emitting layer 17 B is formed in common above the pixel electrodes 15 R, the pixel electrodes 15 G, and the pixel electrodes 15 B.
- an electron-transport layer 18 as represented in FIG. 10F is formed over the light-emitting layer 17 B, following which LiF or Liq or the like as an electron injection membrane is built on, and a cathode electrode 19 is laminated onto the electron-transport layer 18 .
- a cathode electrode 19 aluminum, silver, a silver-magnesium (MgAg) alloy, calcium, or the like is utilized.
- the cathode electrode 19 is laminated over the light-emitting layer 17 B by, for example, vacuum vapor deposition.
- vacuum vapor deposition a vapor-deposition coarse mask is used so that the cathode-electrode material will be deposited in the display area of the EL display panel.
- a cathode electrode 19 is thereby formed as a continuous film over the entire display area.
- a sealing membrane 20 is built on to an extent that will not exert an influence on the groundwork, by a film forming method in which the energy of the film-forming particles is small—e.g., physical vapor deposition or CVD.
- a sealing membrane 20 made from amorphous silicon nitride is built on, it is formed to a film thickness of 2 to 3 ⁇ m by CVD.
- the film forming temperature is set to within a range of from Celsius 15° C. to 25° C., near normal temperatures.
- the sealing membrane 20 may be rendered by building on SiON or the like by CVD, and thereafter building on an acrylic or epoxy organic material or the like.
- a moisture-proofing measure is taken by pasting a sealing film 27 onto the sealing membrane 20 .
- the TFT substrate 52 and a sealing substrate are glued together with a sealing layer intervening so that the EL display elements are encompassed by the TFT substrate 52 , the sealing substrate, and the sealing layer.
- the TFT substrate 52 is sealed by thin-film sealing technology.
- thin-film sealing technology extremely thin inorganic membranes and organic membranes are formed laminated in multiple layers onto the TFT substrate 52 .
- a multilayer structure is imparted in which inorganic membranes (ordinary thickness less than 1 ⁇ m) and organic membranes (ordinary thickness 6 ⁇ m and above) are overlaid in alternation.
- the inorganic membranes protect the EL elements 22 chiefly by preventing intrusion of oxygen and moisture.
- the TFT substrate 25 is conveyed out from the film-forming tool 116 via the convey-out chamber 114 . It should be noted that in order to have the display contrast be excellent, a circularly polarizing plate (circularly polarizing film) 29 is pasted on or otherwise arranged on the light-exiting side of the EL display panel.
- a laser device for generating a laser beam 59 a and a laser device 58 for generating a laser beam 59 b are set up, but the present invention is not thereby limited.
- the laser beam 59 a and the laser beam 59 b may be generated by a single laser device 58 that generates a variable-wavelength beam.
- a plurality of laser devices 58 that generate laser light either as laser beam 59 a or laser beam 59 b may be set up.
- the wavelengths of the laser beam 59 a and the laser beam 59 b may be made to differ.
- the laser beam 59 is directed on it to reform the light-emitting layer 17 , but the present invention is not thereby limited.
- the laser beam 59 may be directed on it to reform or remove the light-emitting layer 17 .
- pixels 37 for a plurality of colors are arranged in matrix form.
- a light-emitting layer 17 a for a first color is layered, and atop it a light-emitting layer 17 b for a second color is layered.
- the emission wavelength from the first-color light-emitting layer 17 a is longer than the emission wavelength from the second-color light-emitting layer 17 b .
- the guest material in the first-color light-emitting layer 17 a absorbs the energy whereby the second-color light-emitting layer 17 b undergoes excitation, and emits light.
- the light-emitting layer 17 a for the first color is layered on pixels for at least one color, and atop it the light-emitting layer 17 b for the second color is layered.
- the laser beam 59 or other beam having narrow directivity is directed onto the light-emitting layer 17 a of the first color to reform the first-color light-emitting layer 17 a and render it a non-emitting layer.
- the light-emitting layer 17 b of the second color is light-emitting.
- a bilaminar light-emitting lamina being the red light-emitting layer 17 R and the green light-emitting layer 17 G has been laminated over the pixel electrodes 15 , by reforming the red light-emitting layer 17 R, the red light-emitting layer 17 R does not emit light; the green light-emitting layer 17 G alone emits light, and the pixels 37 having the aforesaid pixel electrodes 15 emit green light.
- the present invention is not limited by EL display panels in which pixels 37 for a plurality of colors are arranged in matrix form.
- a section that emits light in a plurality of locations is formed in a display unit or else a display screen 36 , wherein a plurality of light-emitting layers 17 is laminated on the light-emitting section.
- the light-emitting section is characterized in that, without a vapor-deposition fine mask 251 etc. being employed, a laser beam 59 or other beam of narrow directivity is directed onto the light-emitting layers 17 of longer wavelength among the plurality of light-emitting layers 17 , whereby the longer wavelength light-emitting layers 17 are reformed.
- no vapor-deposition fine mask 251 is employed.
- at least any one of the light-emitting layers 17 is irradiated with the laser beam 59 or other ultraviolet beam of narrow directivity.
- EL display panels in which the form of the pixels 37 , the arrangement of the pixels 37 , or the number of the pixels 37 differ can be readily manufactured by changing the product variety. What is more, the equipment cost of the manufacturing apparatus is extraordinarily inexpensive.
- vapor-deposition fine masks 251 In conventional manufacturing schemes employing vapor-deposition fine masks 251 , in cases where the pixels 37 are high-definition, the fact that the deposition openings (mask apertures) in the vapor-deposition fine mask 251 are smaller means that fabricating the vapor deposition openings in the vapor-deposition fine mask 251 is arduous. A further issue has been that positioning the vapor-deposition fine mask 251 to accord with the positions of the pixels 37 in the EL display panel is challenging. Still further, vapor-deposition fine masks 251 employed in the manufacture of large EL display panels for televisions are large in surface area and heavy in weight. A consequent issue has been that the transport robot that positions the vapor-deposition fine masks 251 is also large-scale.
- the emission colors of the light-emitting layers 17 is determined by irradiating the pixels 37 with the laser beam 59 .
- ultraviolet-wavelength laser beams 59 spot sizes of 10 ⁇ m or less diameter are realizable.
- such laser beams 59 may be positioned at high speed by mirror-galvanometer 62 control.
- the laser beam 59 may be positioned at high speed into any site on the EL display panel, from its periphery to its midportion. What is more, since only control of the laser beam 59 , not positioning of the vapor-deposition fine mask 251 , is required, manufacturing facilities are inexpensive and manufacturing Takt time can be shortened.
- EL display panels can be manufactured at low cost even with the pixels 37 being high-definition and the EL display-panel dimensions being wide-area. What is more, outstanding display grade and high manufacturing yield may be realized.
- FIGS. 1 and 10 The embodiment illustrated with FIGS. 1 and 10 was an example in which the light-emitting layers 17 are irradiated with a laser beam 59 to reform the light-emitting layers 17 . Nevertheless, the present invention is not thereby limited.
- a light-emitting layer 17 continuing over neighboring pixels 37 may be formed, and by irradiating the light-emitting layer 17 in those pixels 37 with the laser beam 59 , light-emitting layer 17 there may be removed.
- the light-emitting layer 17 R is laminated onto the hole-transport layer 16 .
- the light-emitting layer 17 R is formed as a light-emitting layer 17 R continuing over the red pixels 37 R, the green pixels 37 G, and the blue pixels 37 B.
- the laser beam 59 a is directed onto the light-emitting layer 17 R above the green pixel electrodes 15 G and the blue pixel electrodes 15 B.
- the irradiating by the laser beam 59 a superheats the light-emitting layer 17 R, vaporizing it. By being vaporized, the light-emitting layer 17 R is removed.
- the light-emitting layer 17 G above the blue pixel electrodes 15 B is irradiated with the laser beam 59 b .
- the light-emitting layer 17 G absorbs the laser light 59 b and is thereby superheated and vaporized.
- the light-emitting layer 17 G is removed from atop the hole-transport layer 16 .
- three light-emitting layers, the light-emitting layer 17 R, the light-emitting layer 17 G, and the light-emitting layer 17 G are laminated over the red pixel electrodes 15 R.
- Two light-emitting layers, the light-emitting layer 17 G and the light-emitting layer 17 G, are laminated over the green pixel electrodes 15 G.
- the light-emitting layer 17 G is laminated over the blue pixel electrodes 15 B.
- the manufacturing step of FIG. 10B although the light-emitting layer 17 R is removed by being vaporized, in some cases a portion of the light-emitting layer 17 R may be left remaining. Because light-emitting layer 17 R remaining is reformed by the laser beam 59 a , however, it does not contribute to optical emission.
- the manufacturing step of FIG. 10D although the light-emitting layer 17 G is removed by being vaporized, in some cases a portion of the light-emitting layer 17 G may be left remaining. Because light-emitting layer 17 G remaining is reformed by the laser beam 59 b , however, it does not contribute to optical emission.
- the pixels 37 R At least a portion of the excitation energy that the light-emitting layer 17 B releases is converted into light having the emission spectrum of the guest material that the light-emitting layer 17 R contains. At least a portion of the energy whereby by the light-emitting layer 17 G is excited is converted into light having the emission spectrum of the guest material that the light-emitting layer 17 R contains. Accordingly, with the emission color of the pixels 37 R being about equal to the emission color of the light-emitting layer 17 R, the pixels 37 R give off red light.
- the pixel electrodes 15 G give off green light.
- the pixels 37 B In the pixels 37 B, recombination of electrons and holes occurs mainly in the light-emitting layer 17 B. Because the light-emitting layers 17 for the other colors have been removed, the pixels 37 B give off blue light.
- EL display panels having the three primary colors red, green and blue may be manufactured.
- the laser device 58 being utilized to reform the light-emitting layers 17 .
- the present invention is not thereby limited.
- an LED light-emitting diode
- LEDs can generate narrow-directivity beams.
- FIG. 12 is a diagram for explaining an optical generator using LEDs 122 .
- FIG. 13 meanwhile, is a diagram for explaining a method of reforming a light-emitting layer 17 utilizing the optical generator of FIG. 12 .
- a metal plate or a ceramic plate is employed as a base element in order to dissipate the heat that the LEDs 122 generate.
- a heat-dissipating plate (not depicted) is attached to the back side of the substrate.
- LEDs 122 that generate ultraviolet light are attached to the substrate 123 .
- the dimensions (vertical length c, horizontal length b) of the light-emitting sections of the LEDs 122 are approximately matched to the dimensions of the pixel 37 areas that undergo reforming.
- the dimensions (vertical length c, horizontal length b) of the light-emitting sections are made smaller than the dimensions of the pixel 37 areas that undergo reforming.
- the generator may be a configuration in which lenses (not depicted) or the like are arranged in front of the light emitting sections of the LEDs 122 so that the approximate entirety of the pixels 37 may be irradiated with the ultraviolet light that the LEDs 122 generate.
- the LEDs 122 emitting light allows the light-emitting layers 17 formed above the pixel electrodes 15 in pixels 37 of a predetermined color to be reformed.
- the LED 122 surface-mounting position e along the vertical orientation is matched to the pitch of the pixels 37 .
- the LED 122 surface-mounting position d along the horizontal orientation is approximately matched to the column pitch of the pixels 37 .
- An alternative is to have the LED 122 vertical surface-mounting position e and the LED 122 horizontal surface-mounting position d be n times the pixel pitch (n: a positive number 1 or greater).
- the length f along which the LEDs are mounted is the length from the first row to the last pixel row on the EL display panel. Accordingly, the number of LEDs mounted down the length f matches the number of pixel rows on the EL display panel.
- An alternative is to make the length f be 1/n (n: a positive number 1 or greater) of the length from the first row to the last pixel row on the EL display panel.
- the surface-mounting columns for the LEDs 122 are rendered as two lines, but the present invention is not thereby limited.
- the LED 122 surface-mounting columns may be made three or more lines.
- the number of LED 122 surface-mounting columns or surface-mounting rows may be the number of pixel columns or pixel rows on the display panel.
- Such implementations eliminate the necessity of, as indicated in FIG. 13 , shifting the optical generator in the direction a.
- the optical generator should be positioned on the EL display panel and the LEDs 122 caused to emit light.
- the wavelengths of the light generated by LEDs 122 a and LEDs 122 b as illustrated in FIG. 12 may be made to differ.
- the optical generator may be configured to cause the LEDs 122 a to generate light whose principal wavelength is that of the laser beam 59 a , and to cause the LED 122 b to generate light whose principal wavelength is that of the laser light 59 b , explanatorily illustrated by FIG. 10 .
- FIG. 12B is a section view along the line a-a′ in FIG. 12A .
- a light-absorbing element 121 for absorbing ultraviolet light that the LEDs 122 have generated is formed surrounding the LEDs 122 .
- the LEDs 122 a generate ultraviolet light 141 a
- the LEDs 122 b generate ultraviolet light 141 b .
- As the light absorbing element 121 an example in which carbon has been added to an acrylic or epoxy resin is illustrative.
- the optical generator is arranged so as to coincide with the position of the pixel electrodes 15 on the TFT substrate 52 . And by shifting the optical generator by a pixel-column or pixel-row pitch, and in the position into which the LEDs 122 have been shifted, causing them to emit light, the light-emitting layers 17 in the pixels 37 are reformed.
- both the LEDs 122 a and the LEDs 122 b emit light.
- either the LEDs 122 a or the LEDs 122 b emit light.
- the light-generating means for generating ultraviolet light 59 is not limited to the laser device 58 . As long as it is a light-generating means whereby beams of light in and near the ultraviolet range may be radiated in correspondence with the pixel 37 positions without a vapor-deposition fine mask 251 intervening, it may be any means. And it will be appreciated that by having the light-generating means be a means for generating infrared light, it may find application as a light-generating source 58 for the thermal transfer device of FIG. 18 and related figures.
- optical-generator LEDs 122 be infrared light-emitting LEDs, they may be employed as the light-generating source 58 for the thermal transfer device illustrated in FIG. 18 , FIG. 19 and FIG. 20 .
- a donor film 197 should be arranged between the TFT substrate 52 and the optical generator, wherein a transfer organic film 195 in the donor film 197 is superheated by the light that the infrared-emitting LEDs of the optical-generator generates, forming the light-emitting layer 17 .
- the optical generator may be configured as a dual-use device both for reforming and for thermal transferring the constituent material of the light-emitting layers 17 .
- the device can be used as an optical generator, explanatorily illustrated by FIG. 20 , for removing deposits 201 .
- the light that the LEDs 122 generate has a fixed band of wavelengths rather than a single wavelength as with laser light. Accordingly, the generating of ultraviolet light whose dominant wavelength is from 310 nm to 400 nm is adopted for the light that the LEDs 122 produce.
- FIGS. 14 and 15 are a sectional configuration diagram of, and a diagram for explaining a method of manufacturing, an EL display panel in the second embodiment of the present invention.
- a light-emitting layer (EML (R)) 17 R and a light-emitting layer (EML (GB)) 17 GB are formed above the red pixel electrodes 15 R.
- a light-emitting layer (EML (R)) 17 R and a light-emitting layer (EML (GB)) 17 GB are formed above the green pixel electrodes 15 G and the blue pixel electrodes 15 B.
- the light-emitting layer (EML (GB)) 17 GB contains a blue guest material and a green guest material. The wavelengths of the light that the blue guest material and the green guest material absorb differ.
- the light-emitting layer (EML (R)) 17 R is reformed by being irradiated with laser beam 59 a .
- the blue guest material in the light-emitting layer (EML (GB)) 17 GB is reformed by the light-emitting layer (EML (GB)) 17 GB being irradiated with laser beam 59 b.
- the light-emitting layer (EML (R)) 17 R is reformed by being irradiated with the laser beam 59 a .
- the green guest material in the light-emitting layer (EML (GB)) 17 GB is reformed by the light-emitting layer (EML (GB)) 17 GB being irradiated with laser beam 59 c.
- the TFT substrate 52 is conveyed in from the convey-in chamber 113 in FIG. 11A and conveyed into the chamber (HTL) 111 c .
- the hole-transport layer 16 is formed over the pixel electrodes 15 on the TFT substrate 52 .
- the TFT substrate 52 is conveyed into the emission-layer (EML) R deposition compartment chamber (EML (R)) 111 d .
- EML emission-layer
- EML (R) deposition compartment chamber
- the light-emitting layer 17 R is laminated onto the hole-transport layer 16 .
- the light-emitting layer 17 R is formed by codeposition of a host material and a red guest material.
- the light-emitting layer 17 R is formed as a continuous film across the display screen 36 entirety.
- the TFT substrate 52 is conveyed into the laser device chamber 118 .
- irradiating of the TFT substrate 52 light-emitting layer 17 R is carried out with laser beam 59 a , as indicated in FIG. 15B .
- the laser beam 59 a is directed onto the light-emitting layer 17 R above the pixel electrodes 15 G and the pixel electrodes 15 B.
- the laser beam 59 a is not directed onto the light-emitting layer 17 R above the pixel electrodes 15 R.
- the light-emitting layer 17 R is made into reformed sections 96 a . Because the light-emitting layer 17 R where it is above the pixel electrodes 15 R is not irradiated with the laser beam 59 a , as a light-emitting guest material its capacity is maintained.
- the TFT substrate 52 is conveyed into the central chamber 115 via the load-lock chamber 112 , then conveyed into the compartment chamber (EML (G)) 111 b .
- the compartment chamber 111 b the light-emitting layer (EML (GB)) 17 GB is laminated over the light-emitting layer 17 R, as illustrated in FIG. 15C .
- the light-emitting layer (EML (GB)) 17 GB contains a blue guest material and a green guest material.
- the wavelengths of the laser beams 59 that the blue guest material and the green guest material absorb differ. Changing the wavelength of the laser beam 59 directed onto the light-emitting layer (EML (GB)) 17 GB, enables selecting between the blue guest material and the green guest material to reform.
- a material that does not readily absorb the laser beam 59 a , the laser beam 59 b , and the laser beam 59 c is selected.
- a material that transmits the laser beam 59 is selected.
- the concept that the material “does not readily absorb” laser light and similar optical radiation includes, apart from the material not absorbing light, reflecting said laser light and similar optical radiation, as well as transmitting said laser light and similar optical radiation. Further, the concept also includes that the material or its constituents does not change despite absorbing laser light and similar optical radiation.
- a material that readily absorbs the laser light 59 a is selected.
- a material that readily absorbs the laser light 59 b but does not readily absorb the laser light 59 c is selected.
- a material that readily absorbs the laser light 59 c but does not readily absorb the laser light 59 b is selected.
- the guest-material B absorptivity is 100% at the wavelength of the laser beam 59 b
- a guest-material G stuff whose guest-material G absorptivity will be not greater than 25% is selected.
- the guest-material G absorptivity is 100% at the wavelength of the laser beam 59 c
- a guest material B whose guest-material B absorptivity will be not greater than 25% is selected.
- the guest-material B absorptivity is 100% at the wavelength of the laser beam 59 b
- a host material whose host-material absorptivity will be not greater than 25% is selected.
- Absorptivity being 100% may be read as transmittance being 0%; absorptivity being 0%, as transmittance being 100%; absorptivity being 75%, as transmittance being 25%; absorptivity being 25%, as transmittance being 75%.
- the light-emitting layer (EML (GB)) 17 GB is formed above the green pixel electrodes 15 G, as illustrated in FIG. 15D .
- the light-emitting layer (EML (GB)) 17 GB contains a guest material B that contributes to blue light emission and a guest material G that contributes to green light emission.
- the laser beam 59 b wavelength is a shorter wavelength than the laser beam 59 c wavelength.
- Guest material B absorbs light of shorter wavelengths better than the guest material G.
- the guest material B in the light-emitting layer (EML (GB)) 17 GB is reformed.
- the guest material Gin the light-emitting layer (EML (GB)) 17 GB does not absorb the laser light 59 b .
- the light-emitting layer (EML (GB)) 17 GB acts as a green-emitting light-emitting layer 17 G.
- the light-emitting layer (EML (GB)) 17 GB is formed above the blue pixel electrode 15 B, as illustrated in FIG. 15E .
- the guest material Gin the light-emitting layer (EML (GB)) 17 GB, absorbing the laser light 59 c is reformed.
- the guest material B does not absorb the laser light 59 b .
- the light-emitting layer (EML (GB)) 17 GB Since the light-emitting layer (EML (GB)) 17 GB is maintained in a state in which the guest material B is capable of emitting light, the light-emitting layer (EML (GB)) 17 GB acts as a blue-emitting light-emitting layer 17 B.
- an electron-transport layer 18 as represented in FIG. 15F is formed over the light-emitting layers 17 G and B, following which LiF or Liq or the like as an electron injection membrane is built on, and a cathode electrode 19 is laminated onto the electron-transport layer 18 .
- the cathode electrode 19 is formed onto the electron-transport layer 18 .
- the bulk of the guest material that the light-emitting layer 17 R above the pixel electrodes 15 R includes is capable of emitting light.
- the red guest material included in the light-emitting layer 17 R above the pixel electrodes 15 G and the pixel electrodes 15 B for the most part is quenched or does not undergo excitation.
- the blue guest material B included in the light-emitting layer 17 GB above the pixel electrodes 15 G for the most part is quenched or does not undergo excitation.
- the green guest material G included in the light-emitting layer 17 GB above the pixel electrodes 15 B for the most part is quenched or does not undergo excitation.
- the green guest material G and the blue guest material B also to undergo excitation.
- the green guest material Gin the light-emitting layer 17 GB absorbs the energy whereby by the blue guest material B undergoes excitation. Absorbing energy whereby by the green guest material G is excited, the red guest material R included in the light-emitting layer 17 R above the pixel electrodes 15 R emits light.
- the light-emitting layer 17 R above the pixel electrodes 15 G because the contained red guest material R has been irradiated with the laser beam 59 a , it does not undergo excitation. Likewise, because the blue guest material B in the light-emitting layer 17 GB has been irradiated with the laser beam 59 b , it does not undergo excitation. Therefore, the light-emitting layer 17 GB optically emits in green. Accordingly, the pixel-electrode 15 G pixels 37 optically emit in green.
- the green guest material G in the light-emitting layer 17 GB is a material that optimally absorbs the energy whereby the blue guest material B undergoes excitation, and otherwise that with the configuration of the EL element 22 , the green guest material G included in the upper light-emitting layer 17 GB above the pixel electrodes 15 G absorbs the energy whereby the blue guest material B undergoes excitation and emits light. Accordingly, the light-emitting layer 17 GB optically emits in green. In this case, the manufacturing step of irradiating the light-emitting layer 17 GB above the pixel electrodes 15 G with the laser light 59 b in FIG. 15D can be eliminated.
- the light-emitting layer 17 R above the pixel electrodes 15 B because the contained red guest material R has been irradiated with the laser beam 59 a , it does not undergo excitation. Likewise, because the green guest material Gin the light-emitting layer 17 GB has been irradiated with the laser beam 59 c , it does not undergo excitation. Therefore, the light-emitting layer 17 GB optically emits in blue. Accordingly, the pixel-electrode 15 B pixels 37 optically emit in blue.
- FIGS. 16 and 17 are a sectional structure diagram of, and diagrams for explaining the manufacture of, an EL display panel in the third embodiment of the present invention.
- a light-emitting layer 17 R, a light-emitting layer 17 G, and a light-emitting layer 17 B are formed above the red pixel electrodes 15 R.
- a light-emitting layer 17 G and a light-emitting layer 17 B are formed above the green pixel electrodes 15 G and the blue pixel electrodes 15 B.
- the light-emitting layer 17 G above the blue pixel electrodes 15 B has been irradiated with light to reform the green guest material in the light-emitting layer 17 G.
- the hole-transport layer 16 is formed over the pixel electrodes 15 .
- the TFT substrate 52 is conveyed into the emission-layer (EML) R deposition compartment chamber (EML (R)) 111 d.
- a vapor-deposition fine mask 251 R is arranged on the TFT substrate 52 in order to form the red light-emitting layer 17 R.
- the vapor-deposition fine mask 251 R is a mask having apertures in the red-pixel positions.
- Red light-emitting layer material 172 R is vaporized to laminate a light-emitting layer 17 R onto the hole-transport layer 16 .
- the light-emitting layer 17 R is formed by codeposition of a host material and a red guest material. The codeposition is implemented in a vacuum process step.
- the TFT substrate 52 is conveyed into the compartment chamber 111 b .
- the light-emitting layer 17 G is laminated.
- the light-emitting layer 17 G contains a green guest material.
- the TFT substrate 52 is conveyed into the laser device chamber 118 shown in FIG. 11A .
- the light-emitting layer 17 G above the blue pixel electrode 15 B is irradiated with the laser light 59 .
- the guest material G of the light-emitting layer 17 G absorbs the laser beam 59 and is reformed.
- the guest material G of the light-emitting layer 17 G is in a state capable of emitting light.
- a light-emitting layer 17 B is formed. Since the light-emitting layer 17 B is maintained in a state in which the guest material B can emit light, the light-emitting layer 17 B becomes a light-emitting layer that emits blue light.
- the electron-transport layer 18 is formed above the light-emitting layer 17 GB, then the electron-injection layer is formed, and the cathode electrode 19 is laminated onto the electron-transport layer 18 .
- the light-emitting layer 17 is formed using the vapor-deposition fine mask 251 , but the present invention is not limited to this.
- other layers such as the hole-transport layer 16 may be formed using the vapor-deposition fine mask 251 .
- the step of forming the hole-transport layer (HTL) of the blue pixel 37 B of FIG. 28A , the step of forming the hole-transport layer (HTL) of the red pixel 37 R of FIG. 28B , and the step of forming the hole-transport layer (HTL) of the blue pixel 37 B of FIG. 28 D, and the step of forming the insulating film 14 B are exemplifying.
- recombination of electrons and holes mainly occurs in the red guest material R of the light-emitting layer 17 R. It may also occur in the blue guest material B of the layer 17 B.
- the green guest material G of the light-emitting layer 17 G absorbs energy that excites the blue guest material B of the light-emitting layer 17 B.
- the red guest material R included in the light-emitting layer 17 R above the pixel electrode 15 R absorbs energy that excites the green guest material G and emits light.
- the light-emitting layer 17 of the pixel electrode 15 R of the EL display panel of the present invention shown in FIG. 16 emits red light.
- the green guest material G of the light-emitting layer 17 G above the pixel electrode 15 G absorbs energy that excites the blue guest material B of the light-emitting layer 17 B.
- the light-emitting layer 17 of the pixel electrode 15 G of the EL display panel of the present invention shown in FIG. 16 emits green light.
- the contained green guest material G is not excited by being irradiated with the laser beam 59 .
- the light-emitting layer 17 B emits blue light. Therefore, the pixel 37 of the pixel electrode 15 B emits blue light.
- the formation of the light-emitting layer 17 R with the vapor-deposition fine mask 251 is described as an example.
- the present invention is not limited to this.
- the light-emitting layer 17 R may be formed by a laser thermal transfer method, an ink jet method, or a printing method.
- the present invention it is also a technical category of the present invention to form other light-emitting layers such as the light-emitting layer 17 G and the light-emitting layer 17 B with a vapor-deposition fine mask. Moreover, it is not limited to the light-emitting layer 17 .
- the positive hole-transport layer 16 may be formed.
- the film thicknesses of the hole-transport layer 16 R, the hole-transport layer 16 G, and the hole-transport layer 16 B may be easily varied and formed.
- a fourth embodiment of the present invention will be described below with reference to the drawings. First, a laser thermal transfer apparatus which is one of the EL display panel manufacturing apparatuses of the present invention will be described.
- FIG. 18 is an explanatory diagram of a laser thermal transfer apparatus which is one of the EL display panel manufacturing apparatuses of the present invention. Items related to the laser device 58 of the laser thermal transfer device, the control device, the control method, the operation, and the like have been described with reference to FIGS. 4, 5, 6 etc.
- the laser light 59 generated by the laser device 58 is light in the ultraviolet region when reforming the light-emitting layer 17 and the like, whereas it is different from light in the infrared region in the case of laser thermal transfer.
- FIG. 11B is an explanatory diagram of an EL display panel manufacturing apparatus according to the fourth embodiment of the present invention.
- the laser thermal transfer device is disposed in the transfer device chamber 117 of FIG. 11B .
- the TFT substrate 52 is conveyed into the transfer device chamber 117 via the load lock chamber 112 a .
- FIGS. 11A and 11B are that the compartment chamber 111 d is a load lock chamber 112 a and a transfer device 117 .
- the transfer device for the transfer organic film 195 includes a laser device 58 that generates laser light 59 d for irradiating the donor film 197 .
- FIG. 19 is an explanatory diagram for explaining the operation of irradiating the donor film 197 with the laser beam 59 d by the laser device 58 in the transfer process.
- the laser thermal transfer apparatus includes a sliding stage 182 on which the TFT substrate 52 is placed and a control mechanism 185 .
- the support mechanism 183 of the control mechanism 185 holds the donor film 197 disposed on the TFT substrate 52 .
- the support mechanism 183 includes a raise/lower mechanism 184 so that the distance between the TFT substrate 52 and the donor film 197 can be adjusted.
- the sliding stage 182 has an exhaust port 181 for exhausting the gas existing between the TFT substrate 52 and the donor film 197 to the outside.
- the control mechanism 185 a includes a support mechanism 183 a that supports one end of the donor film 197 and a raise/lower mechanism 184 a .
- the control mechanism 185 b includes a support mechanism 183 b that supports the other end of the donor film 197 and a raise/lower mechanism 184 b .
- the support mechanism 183 a and the support mechanism 183 b can move the donor film 197 up and down on the sliding stage 182 independently.
- the raise/lower mechanism 184 a moves up and down on the sliding stage 182 .
- the support mechanism 183 b fixes the other end of the donor film 197 .
- the raise/lower mechanism 184 b moves the donor film 197 up and down on the sliding stage 182 .
- the support mechanism 183 supports the donor film 197 so that the donor film 197 is disposed on the TFT substrate 52 .
- the support mechanism 183 and the raise/lower mechanism 184 can support both ends of the donor film 197 and move the donor film 197 up and down with respect to the TFT substrate 52 .
- the sliding stage 182 includes two exhaust ports 181 a and 181 b .
- the exhaust port 181 is a passage that connects the inside and the outside of the transfer device chamber 117 .
- the gas existing between the TFT substrate 52 placed on the sliding stage 182 and the donor film 197 disposed on the TFT substrate 52 through the exhaust port 181 is exhausted to the outside of the transfer device chamber 117 .
- the sliding stage 182 further includes driving means (not shown) for moving.
- driving means for moving.
- a driving unit for moving the sliding stage 182 in the lateral direction.
- the support mechanism 183 can be raised or lowered in the normal direction of the TFT substrate 52 by the raise/lower mechanism 184 .
- the control mechanism 185 a and the control mechanism 185 b can be independently controlled in operation, and can be controlled to rise and fall independently.
- the pressure roller 186 is disposed on the donor film 197 and can apply pressure on the donor film 197 toward the TFT substrate 52 .
- the pressure roller 186 applies pressure to the donor film 197 toward the TFT substrate 52 during the bonding process between the donor film 197 and the TFT substrate 52 to bring the donor film 197 and the TFT substrate 52 into close contact with each other.
- the pressure roller 186 can prevent the transfer organic film 195 transferred to the TFT substrate 52 from being peeled off during the peeling process between the donor film 197 and the TFT substrate 52 .
- the support mechanism 183 moves the donor film 197 so as to be separated from the TFT substrate 52 before the bonding step between the TFT substrate 52 and the donor film 197 .
- the exhaust port 181 exhausts gas existing in the space between the TFT substrate 52 and the donor film 197 to the outside.
- the support mechanism 183 pulls in a direction extending from one end and the other end of the donor film 197 to the outside. By pulling the donor film 197 taut, the support mechanism 183 prevents the donor film 197 from sagging toward the TFT substrate 52 .
- the support mechanism 183 a lifts one end of the donor film 197 , so that the pressure roller 186 is opposed to one end from one end of the donor film 197 . Move along.
- the pressure roller 186 By applying pressure to the donor film 197 by the pressure roller 186 , it is possible to prevent the transfer organic film 195 transferred to the TFT substrate 52 from being peeled off during the peeling process.
- the support mechanism 183 a is raised while the support mechanism 183 b is stopped.
- the TFT substrate 52 is separated from one end of the donor film 197 from the side close to the support mechanism 183 a.
- the support mechanism 183 b starts to rise.
- the donor film 197 As for the donor film 197 , the donor film 197 closer to the support mechanism 183 b is raised, and the donor film 197 and the TFT substrate 52 are separated.
- the EL display panel manufacturing method uses a laser thermal transfer method.
- the step of disposing the TFT substrate 52 on the sliding stage 182 the step of removing the gas existing between the TFT substrate 52 and the donor film 197 , and the step of the bonding of the donor film 197 and the TFT substrate 52 are performed.
- a step of transferring the transfer organic film 195 of the donor film 197 to the TFT substrate 52 , and a step of peeling the donor film 197 and the TFT substrate 52 are performed.
- FIG. 19 is an explanatory diagram for explaining a configuration of a donor film 197 used in the fourth embodiment of the present invention and a manufacturing method using the donor film 197 .
- the base film 191 of the donor film 197 is made of a transparent polymer material.
- As the base film 191 it is particularly preferable to use a polyethylene terephthalate film.
- the thickness of the base film 191 is preferably from 10 ⁇ m to 500 ⁇ m.
- the base film 191 constituting the donor film 197 is described as a film made of a resin material, the present invention is not limited to this. It will be appreciated that the base film 191 may be formed of an inorganic material plate such as glass. Therefore, the donor film is not limited to a film, and may be any component as long as it is a sheet-like material on which the photoconversion film 192 and the transfer organic film 195 are formed.
- a photoconversion film 192 is formed on the base film 191 .
- the photoconversion film 192 is a layer that absorbs the laser light 59 d in the infrared-visible light region and converts part of the light into heat.
- Examples of the photoconversion film 192 include a metal film containing aluminum oxide and aluminum sulfide as a light-absorbing substance, carbon black, and graphite.
- An intermediate film 193 can be formed on the photoconversion film 192 .
- the intermediate film 193 serves to prevent the light-absorbing substance contained in the photoconversion film 192 , such as carbon black, from contaminating the transfer organic film 195 formed in the subsequent process.
- the intermediate film 193 can be formed of an acrylic resin or an alkyd resin. In the case where the intermediate film 193 is formed on the photoconversion film 192 , it is preferable to further form a buffer film 194 on the intermediate film 193 .
- the buffer film 194 is formed to prevent damage to the organic film or the like formed on the transfer organic film 195 and to effectively adjust the adhesive force between the intermediate film 193 and the transfer organic film 195 .
- the buffer film 194 is made of metal or metal oxide having a laser beam transmittance of 20% or less, and the thickness of the buffer film 194 is 0.05 ⁇ m or more and 1 ⁇ m or less.
- a transfer organic film 195 is formed on the buffer film 194 .
- the transfer organic film 195 is an organic material for forming the light-emitting layer 17 , the hole injection layer, the hole-transport layer 16 , the electron-injection layer, the electron-transport layer 18 , and the like.
- the transfer organic film 195 is manufactured by coating an organic thin film forming substance.
- the transfer organic film 195 two or more organic layers can be laminated as needed instead of one organic layer.
- the donor film 197 is irradiated with laser light 59 d having an infrared wavelength or a visible wavelength.
- a donor film 197 is disposed on the TFT substrate 52 .
- the alignment between the TFT substrate 52 and the donor film 197 is performed by a control mechanism 185 or the like.
- the laser beam 59 d passes through the base film 191 and heats the photoconversion film 192 .
- the photoconversion film 192 emits heat by the laser beam 59 d .
- the photoconversion film 192 expands, and the transfer organic film 195 peels from the donor film 197 .
- the peeled transfer organic film 195 a is laminated as the light-emitting layer 17 R above the pixel electrode 15 of the TFT substrate 52 .
- the thickness of the laminated light-emitting layer 17 is proportional to the thickness of the transfer organic film 195 . Therefore, by defining the thickness of the transfer organic film 195 , the thickness of the light-emitting layer 17 can be defined.
- a plurality of donor films 197 may be used and the transfer organic film 195 may be transferred onto the hole transport layer 16 a plurality of times.
- the film thickness of the light-emitting layer 17 can be accurately formed to a prescribed film thickness by transferring a plurality of times.
- the laser beam 59 d all general-purpose laser beams such as solid, gas, semiconductor, and dye can be used. Among these, it is preferable to use laser light having a wavelength in the infrared region having a wavelength of 800 nm or more.
- a YAG laser, a glass laser, and a carbon dioxide laser are exemplified.
- a helium neon (HeNe) laser can also be employed.
- FIG. 11B and FIG. 21 are explanatory views of the EL display panel manufacturing method and manufacturing apparatus in the fourth embodiment.
- the TFT substrate 52 is conveyed into the film forming apparatus 116 from the convey-in chamber 113 .
- the thermal transfer device that thermally transfers the light-emitting layer 17 is installed in the transfer device chamber 117 .
- the TFT substrate 52 is conveyed into the transfer device chamber 117 via the load lock chamber 112 a .
- the TFT substrate 52 is conveyed into a chamber (HTL) chamber 111 c in which the hole transport layer 16 is deposited.
- the hole transport layer 16 is formed above the pixel electrode 15 of the TFT substrate 52 .
- the TFT substrate 52 is conveyed into a transfer device chamber 117 to which the light-emitting layer R is transferred.
- the donor film 197 is irradiated with laser light 59 d having a wavelength in the infrared region or the visible light region.
- the laser beam 59 d passes through the base film 191 and heats the photoconversion film 192 .
- the released heat causes the photoconversion film 192 of the donor film 197 to expand, and the transfer organic film 195 a peels from the donor film 197 .
- the peeled transfer organic film 195 is transferred onto the hole transport layer 16 of the TFT substrate 52 to a desired pattern and thickness as the light-emitting layer 17 R.
- the transfer organic film 195 a becomes the light-emitting layer 17 R.
- the transfer organic film 195 is thermally transferred to the TFT substrate 52 as the light-emitting layer 17 R.b
- the transfer organic film 195 may adhere as an adherent 201 b on the bank 95 as well as above the red pixel electrode 15 R.
- the adhering material 201 a is attached not only to the red pixel electrode 15 R but also above the green pixel electrode 15 G and above the blue pixel electrode 15 B.
- the deposit 201 b adhering to the bank 95 may peel off and adhere to the pixel electrode 15 and cause a defect. Further, the adhering material 201 a attached above the green pixel electrode 15 G and above the blue pixel electrode 15 B emits light, which may cause a color adulteration problem.
- FIG. 20 is an explanatory view of a method for reforming or removing the deposit 201 generated in the manufacturing process of the EL display panel of the present invention.
- the deposit 201 adhered to an unnecessary portion by thermal transfer is irradiated with a laser beam 59 a to be reformed.
- the deposit 201 is irradiated with laser light 59 a in the ultraviolet band.
- the guest material of the deposit 201 is reformed by irradiation with laser light 59 a having an ultraviolet wavelength. Due to the reforming, the deposit 201 does not emit light or is removed.
- the laser beam 59 a can be the same as the laser beam 59 in FIG. 4 .
- the same laser device 58 can be used.
- the wavelength of the laser beam 59 a is in the ultraviolet region.
- the deposit 201 is reformed by the irradiation of the laser beam 59 a .
- the deposit 201 is heated and evaporated by irradiation with the laser beam 59 a , and is removed from above the pixel electrode 15 .
- the TFT substrate 52 is conveyed into the compartment chamber (EML (G)) 111 b .
- the compartment chamber 111 b As shown in FIG. 21C , the light-emitting layer 17 G is laminated above the light-emitting layer 17 R by a vapor deposition method.
- the vapor-deposition fine mask 251 is not used in the vacuum vapor deposition step of the light-emitting layer 17 G.
- the light-emitting layer 17 G is deposited on the entire display screen 36 of the display panel using a rough deposition mask (not shown). Accordingly, the light-emitting layer 17 G is formed in common above the pixel electrode 15 R, the pixel electrode 15 G, and the pixel electrode 15 B.
- the TFT substrate 52 is conveyed into the laser device chamber 118 via the load lock chamber 112 b .
- the light-emitting layer 17 G of the TFT substrate 52 is irradiated with laser light 59 a .
- the laser light 59 a irradiates the light-emitting layer 17 G above the pixel electrode 15 B.
- the laser light 59 a is not applied to the light-emitting layer 17 G above the pixel electrode 15 R and the pixel electrode 15 G.
- the light-emitting layer 17 G is reformed by the irradiated portion of the laser light 59 a to become a reformed portion 96 b.
- the performance as the light-emitting layer is maintained.
- the TFT substrate 52 is conveyed into a compartment chamber (EML (B) ETL) 111 e .
- EML (B) ETL compartment chamber
- the light-emitting layer 17 B is laminated above the light-emitting layer 17 G by a vapor deposition method.
- the vapor-deposition fine mask 251 is not used in the vacuum vapor deposition process of the light-emitting layer 17 B.
- the light-emitting layer 17 B is deposited on the entire display screen 36 of the display panel using a rough deposition mask (not shown). Therefore, the light-emitting layer 17 B is formed in common above the pixel electrode 15 R, the pixel electrode 15 G, and the pixel electrode 15 B.
- the electron-transport layer 18 is formed above the light-emitting layer 17 B, then the electron-injection layer is formed, and the cathode electrode 19 is stacked on the electron-transport layer 18 .
- the panel structure manufactured by the EL display panel manufacturing method described in FIG. 21 is the same as that in FIG. 16 . Since the structure and operation of the EL display panel in FIG. 16 have been described, description thereof will be omitted.
- the fourth embodiment is different in that the light-emitting layer 17 of FIG. 16 is formed by a thermal transfer method.
- the formation of the light-emitting layer 17 R using the donor film 197 or the like has been described as an example.
- it is also a technical category of the present invention to form other light-emitting layers such as the light-emitting layer 17 G and the light-emitting layer 17 B with the donor film 197 or the like.
- the insulating film 14 may be formed.
- FIGS. 22 and 23 are a cross-sectional view of an EL display panel and an explanatory view of a manufacturing method according to the fifth embodiment of the present invention.
- a light-emitting layer 17 R and a light-emitting layer EML (GB) are formed above the red pixel electrode 15 R.
- a light-emitting layer EML (GB) is formed above the green pixel electrode 15 G and the blue pixel electrode 15 B.
- the light-emitting layer EML (GB) is formed by codepositing a host material, a green light emitting guest material, and a blue light emitting guest material.
- the hole transport layer 16 is formed on the TFT substrate 52 above the pixel electrode 15 .
- a vapor-deposition fine mask 251 R is disposed on the TFT substrate 52 in order to form the red light-emitting layer 17 R.
- the red light-emitting layer material 172 R is evaporated, and the light-emitting layer 17 R is laminated on the hole transport layer 16 .
- the light-emitting layer 17 R is formed by codepositing a host material and a red guest material.
- a light-emitting layer EML (GB) is laminated.
- the light-emitting layer EML (GB) contains a green light emitting guest material and a blue light emitting guest material.
- the light-emitting layer EML (GB) is formed by codepositing a host material, a green light emitting guest material, and a blue light emitting guest material.
- the TFT substrate 52 is conveyed into the laser device chamber 118 , and as shown in FIG. 23D , the light-emitting layer EML (GB) above the blue pixel electrode 15 B is irradiated with the laser light 59 c .
- the green guest material G in the light-emitting layer EML (GB) absorbs the laser beam 59 c and becomes the reformed portion 96 .
- a material that hardly absorbs the laser beam 59 c is selected as the host material and the green guest material B.
- the green guest material G a material that easily absorbs the laser light 59 c is selected.
- the guest material B is selected such that the absorptance of the guest material B is 25% or less when the absorptivity of the guest material G is 100% at the wavelength of the laser beam 59 c . Further, the material is selected so that the difference between the absorption rate of the guest material G and the absorption rate of the guest material B is three times or more.
- the guest material G of the light-emitting layer 17 G is in a state capable of emitting light.
- the electron-transport layer 18 is formed above the light-emitting layer EML (GB), and as illustrated in FIG. 23F , the electron-injection layer is formed, and the cathode electrode 19 is laminated onto the electron-transport layer 18 .
- the absorption spectrum of the red guest material R included in the light-emitting layer 17 R above the pixel electrode 15 R in FIG. 22 at least partially overlaps the emission spectrum of the green guest material in the light-emitting layer EML (GB). Further, the emission spectrum of the green guest material of the light-emitting layer EML (GB) at least partially overlaps the emission spectrum of the blue guest material B of the light-emitting layer EML (GB).
- recombination of electrons and holes mainly occurs in the red guest material R of the light-emitting layer 17 R, but recombination occurs in the green guest material G and blue of the light-emitting layer EML (GB). This may also occur in the guest material B.
- the green guest material G of the light-emitting layer EML absorbs energy for exciting the blue guest material B.
- the red guest material R included in the light-emitting layer 17 R above the pixel electrode 15 R absorbs energy that excites the green guest material G and emits light.
- the light-emitting layer 17 R of the pixel electrode 15 R of the EL display panel of the present invention shown in FIG. 22 emits red light.
- recombination of electrons and holes mainly occurs in the green guest material G of the light-emitting layer 17 G, but recombination occurs in the blue guest material of the light-emitting layer EML (GB). It may also occur in the blue guest material B of B.
- the green guest material G of the light-emitting layer EML (GB) absorbs energy that excites the blue guest material B of the light-emitting layer EML (GB).
- the light-emitting layer EML (GB) of the pixel electrode 15 G of the EL display panel of the present invention shown in FIG. 22 emits green light.
- the contained green guest material G is not excited by being irradiated with the laser beam 59 c .
- the blue guest material B emits light. Therefore, the pixel 37 of the pixel electrode 15 B emits blue light.
- FIGS. 24 and 25 are a cross-sectional view of an EL display panel according to the sixth embodiment of the present invention and an explanatory diagram of the manufacturing method.
- the light-emitting layer EML (RGB) is formed above the red, green, and blue pixel electrodes 15 .
- the light-emitting layer EML (RGB) is formed by codepositing a host material, a red light-emitting guest material, a green light-emitting guest material, and a blue light-emitting guest material.
- the hole transport layer 16 is formed on the TFT substrate 52 above the pixel electrode 15 .
- the light-emitting layer 17 RGB is laminated on the hole transport layer 16 on the TFT substrate 52 .
- the light-emitting layer 17 RGB is formed by codepositing a host material, a red light-emitting guest material, a green light-emitting guest material, and a blue light-emitting guest material.
- the TFT substrate 52 is conveyed into the laser device chamber 118 , and as shown in FIG. 25C , the laser light 59 a is applied to the light-emitting layer EML (RGB) above the green pixel electrode 15 G and the blue pixel electrode 15 B.
- the red guest material R in the light-emitting layer EML (RGB) absorbs the laser beam 59 a and becomes the reformed portion 96 a.
- a material that easily absorbs the laser beam 59 a is selected.
- the green guest material G and the blue guest material B materials that hardly absorb the laser light 59 a are selected.
- the guest material G is selected such that the absorption rate of the guest material G is 25% or less when the absorption rate of the guest material R is 100% at the wavelength of the laser beam 59 a . Further, the material is selected so that the difference between the absorption rate of the guest material R and the absorption rate of the guest material G is three times or more. The material is preferably selected so as to be 4 times or more.
- the guest material R, the guest material G, and the guest material B of the light-emitting layer 17 RGB are maintained in a state capable of emitting light.
- laser light 59 b is applied to the light-emitting layer EML (RGB) above the blue pixel electrode 15 B.
- the green guest material G of the light-emitting layer EML (RGB) absorbs the laser beam 59 b and becomes the reformed portion 96 b.
- a material that easily absorbs the laser beam 59 b is selected.
- a material that hardly absorbs the laser beam 59 b is selected.
- the guest material B is selected such that the absorption rate of the guest material B is 25% or less when the absorption rate of the guest material G is 100% at the wavelength of the laser beam 59 b . Further, the material is selected so that the difference between the absorption rate of the guest material G and the absorption rate of the guest material B is three times or more.
- an electron-transport layer 18 is formed above the light-emitting layer EML (RGB), an electron-injection layer is formed as shown in FIG. 25F , and the cathode electrode 19 is laminated onto the electron-transport layer 18 .
- EML light-emitting layer
- EML electron-injection layer
- the green guest material G of the light-emitting layer EML (RGB) absorbs the energy with which the blue guest material B is excited.
- the red guest material R included in the light-emitting layer EML (RGB) above the pixel electrode 15 R emits light by absorbing energy excited by the green guest material G.
- the light-emitting layer 17 R of the pixel electrode 15 R of the EL display panel of the present invention shown in FIG. 24 emits red light.
- the green guest material G of the light-emitting layer EML (RGB) above the pixel electrode 15 G absorbs energy that excites the blue guest material B of the light-emitting layer EML (RGB).
- the light-emitting layer EML (RGB) of the pixel electrode 15 G of the EL display panel of the present invention shown in FIG. 24 emits green light.
- the green guest material G contained in the light-emitting layer EML (RGB) above the pixel electrode 15 B is not excited by being irradiated with the laser light 59 b . Further, the red guest material R contained in the light-emitting layer EML (RGB) is not excited by being irradiated with the laser light 59 a .
- the blue guest material B emits light. Therefore, the pixel 37 of the pixel electrode 15 B emits blue light.
- the light-emitting layer 17 and the like above the pixel electrode 15 are irradiated with the laser light 59 to reform the light-emitting layer 17 and the like.
- the present invention is not limited to this.
- the light-emitting layers 17 of different colors overlap between adjacent pixels, color mixing occurs.
- the overlapping light-emitting layer may generate red light and green light, and mixed color light may be generated.
- the light-emitting layer 17 and the like may be reformed or removed by irradiating laser light 59 between the pixels 37 .
- FIGS. 26 and 27 are a cross-sectional view of an EL display panel according to a seventh embodiment of the present invention and an explanatory view of the manufacturing method.
- laser light 59 is irradiated between adjacent pixels to reform the light-emitting layer 17 and the like between adjacent pixels.
- the pixel 37 is irradiated with the laser light 59 c and the irradiated light-emitting layer 17 is reformed to form a non-light-emitting layer in the first embodiment described with reference to FIGS. 1 and 10 is illustrated.
- the light-emitting layer 17 between the pixel electrodes 15 and the hole transport layer 16 are irradiated with a laser beam 59 c to form a reformed portion 96 c .
- the section structure illustrates the embodiment of FIG. 1 , wherein the bank 95 of FIG. 1 is eliminated, and the portion of the bank 95 of FIG. 1 is irradiated with the laser beam 59 c making a structure where the locations irradiated with the laser beam 59 c are a reformed portion 96 c.
- the step of forming the bank 95 can be omitted, and the manufacturing cost can be reduced.
- the aperture ratio of the pixel 37 can be increased, the current concentration in the pixel 37 is eliminated, and the life of the EL element 22 can be increased.
- the hole transport layer 16 is formed above the pixel electrode 15 of the TFT substrate 52 .
- the light-emitting layer 17 R is laminated on the hole transport layer 16 by a vapor deposition method. Further, the light-emitting layer 17 of the TFT substrate 52 is irradiated with a laser beam 59 a . The laser light 59 a is applied to the light-emitting layer 17 R above the pixel electrode 15 G and the pixel electrode 15 B.
- the light-emitting layer 17 R is reformed by the irradiated portion of the laser beam 59 a to become a reformed portion 96 a .
- the light-emitting layer 17 G is laminated on the light-emitting layer 17 R by a vapor deposition method.
- the light-emitting layer 17 G of the TFT substrate 52 is irradiated with a laser beam 59 b .
- the laser light 59 b irradiates the light-emitting layer 17 G above the pixel electrode 15 B.
- the light-emitting layer 17 G is reformed by the irradiated portion of the laser beam 59 b to become a reformed portion 96 b.
- the light emitting material between the pixels 37 is reformed by irradiating laser light 59 c between adjacent pixels.
- a slit mask 92 or the like is used, and the laser beam 59 c is irradiated from the opening (light transmission portion) of the slit mask 92 c .
- the gap can be reformed.
- the electron-transport layer 18 is formed above the light-emitting layer 17 B, and the cathode electrode 19 is stacked on the electron-transport layer 18 .
- the technical idea of the present invention is to irradiate a laser beam or the like to reform or remove the light-emitting layer 17 or the like to make it non-light emitting.
- the contents (or part of the contents) described in each drawing of the embodiment can be applied to various electronic devices. Specifically, it can be applied to a display portion of an electronic device.
- Such electronic devices include video cameras, digital cameras, goggles-type displays, navigation systems, sound playback devices (car audio, audio components, etc.), computers, game devices, portable information terminals (mobile computers, mobile phones, portable games). And an image reproducing apparatus (specifically, an apparatus having a display capable of reproducing a recording medium such as digital versatile disc (DVD) and displaying the image).
- DVD digital versatile disc
- FIG. 29A is a perspective view of a display using the EL display panel 271 of the present invention.
- the EL display panel 271 is attached to the housing 272 .
- the display illustrated in FIG. 29A has a function of displaying various information (still images, moving images, text images, and the like) on the display portion.
- FIG. 29B is a perspective view of a smartphone using the EL display panel 271 of the present invention.
- the EL display panel 271 is installed into the housing 272 .
- An EL display device using the EL display panel according to the present embodiment is a concept including a system device such as an information device.
- the concept of a display device includes system equipment such as information equipment.
- the present disclosure is useful for an EL display device and an EL display panel.
- it is useful for an active organic EL flat panel display.
- it is useful as a manufacturing method and manufacturing apparatus of the EL display panel of the present invention.
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Abstract
An EL display panel fabricated by evaporation creates red, green, and blue pixels using a fine deposition mask (251). However, the displacement of the fine deposition mask (251) decreases the manufacturing yield. In the present invention, red, green, and blue pixel electrodes are arranged in a matrix on a TFT substrate (52). The TFT substrate (52) is transferred into a vacuum deposition chamber (56). A light-emitting layer made up of a host material and a red guest material is codeposited on the presentation screen of the TFT substrate using an organic evaporation source (66) in a vacuum. A laser device (58) generates ultraviolet laser light (59) which is guided into the vacuum deposition chamber (56) through a laser window (63) to irradiate a light-emitting layer formed on the green and blue pixel electrodes. The positions of the green and blue pixels are selected by controlling a galvano mirror (62).
Description
- The present invention relates to EL display panels; in particular it relates to EL display panels and EL display devices, and EL Display-Panel manufacturing methods and EL Display-Panel manufacturing apparatuses including organic electroluminescent (sometimes termed “organic EL” in the following) elements and suited to color-image display.
- EL display panels in which organic EL elements are arranged in matrix form have been commoditized as displays in smartphones and televisions.
-
FIG. 30 is a structural diagram of a conventional EL display panel. Banks (sidewalls) 95 are formed alongsidepixel electrodes 15. Thebanks 95 prevent a vapor-depositionfine mask 251 from contacting thepixel electrodes 15 and other constituents. - In an EL display panel,
EL elements 22 are arranged in matrix form in a display screen 36 (referring toFIG. 2 ). TheEL elements 22 have an organic-material laminated structure including a hole-transport layer (HTL) 16, an emitter layer (EML) 17, and an electron-transport layer (ETL) 18, and are in a configuration in which the laminated structure is sandwiched between pixel electrodes 15 (15R, 15B, 15G) and a light-permeable cathode electrode 19. A source driver circuit 32 (referring toFIG. 2 ) and a gate driver circuit 31 (referring toFIG. 2 ) are surface-mounted into a panel for an EL display to construct an EL display panel. -
FIG. 31 is a diagram for explaining a conventional method for manufacturing an EL display panel. In order to vapor-deposit red (R) color, green (G) color, and blue (B) color EL materials in corresponding pixels during deposition, vapor-deposition fine masks 251 (251R, 251G, 251B) are employed. The vapor-depositionfine masks 251 are masks constituted from metal or synthetic resins, perforated with holes matched to the corresponding pixel geometry. - As indicated in
FIG. 31A , hole-transport layers 16 are formed on thepixel electrodes 15. Subsequently, as indicated inFIG. 31B , a red vapor-depositionfine mask 251R is set into place. The red vapor-depositionfine mask 251R is perforated in locations corresponding to thered pixel electrodes 15R. It is not perforated in locations corresponding to the pixel electrodes for the other colors (green pixel electrodes 15G andblue pixel electrodes 15B). - With the vapor-deposition
fine mask 251R having been, as just noted, set into place, red light-emitting-layer material 172R is vaporized from a vaporization source, and through the perforations in themask 251R the red light-emitting-layer material 172R is deposited onto thered pixels 37R. Red light-emittinglayers 17R are formed by the deposited red light-emitting layer material. - For the green pixels, in the same way as with the red pixels, a green vapor-deposition
fine mask 251G is set into place as indicated inFIG. 31C , and via the perforations in themask 251G, green light-emittinglayers 17G are formed on thegreen pixels 37G. - For the blue pixels, likewise as with red pixels, a blue vapor-deposition fine mask 251B is set into place as indicated in
FIG. 31D , and via the perforations in the mask 251B, blue light-emittinglayers 17B are formed on theblue pixels 37B. -
FIG. 31E is an explanatory diagram representing an operation subsequent to that ofFIG. 31D . Electron-transport layers 18 are deposited over the red, green, and blue light-emittinglayers 17. A cathode electrode (cathode) 19 composed of magnesiumsilver (MgAg) etc. is formed onto the electron-transport layers 18. As illustrated inFIG. 31F , asealing membrane 20 is formed onto thecathode electrode 19. -
- Patent Document 1: Pat. Pub. No. 2004-235138
- With conventional EL display panels, during the formation of the light-emitting
layers 17 for red, green and blue EL elements, red, green and blue vapor-depositionfine masks 251 are employed. - Should misregistration of the vapor-deposition
fine mask 251 occur, however, color adulteration in thepixels 37 will arise. A further issue has been that the cost of the mechanisms and devices for positioning the photolithography mask is expensive. Yet another issue has been that because aligning the photolithography mask requires a lengthy amount of time, manufacturing Takt time is prolonged. - With the present invention, in an operation of forming a light-emitting layer for at least one colored, green, blue, etc. in the manufacture of an EL display panel, a continuous single-color light-emitting
layer 17 is formed in common amongpixels 37 for a plurality of colors (referring toFIG. 2 ). The light-emitting layer is formed by codeposition of, principally, a guest (dopant) material and a host material. The formed light-emittinglayer 17 is irradiated with a laser beam that “reforms” the light-emittinglayer 17. - “Reforming” may be that the light-emitting
layers 17 are quenched, or are rendered non-emitting, or else are rendered practically non-emitting. - Likewise, “reforming” may be that the band gap of the guest material is greater than the band gap of the host material, and in terms of the relative dispositions of the highest occupied molecular orbitals (HOMOs) and lowest unoccupied molecular orbitals (LUMO) in the guest material and in the host material, at least one or more of relationships being that in the guest material the HOMOs are lower than in the host material, and that in the guest material the LUMOs are higher than in the host material arises.
- Further, “reforming” may be causing the guest material to absorb light in the ultraviolet range to make the band gap of the guest material greater than the energy-gap region where visible light is emitted.
- Additionally, “reforming” may be that the film layers constituting the
EL elements 22, or at least a portion of the components constituting the light-emittinglayers 17, e.g., the guest materials or host materials, produces decomposition or polymerization, or produces change in the molecular structure, altering the physical properties. - “Reforming” also may be that the film layers constituting the
EL elements 22, for example, the guest materials or host materials for the light-emittinglayers 17, are vaporized etc. to remove the materials from deposited locations. Alternatively, it may be that the film layers constituting the EL elements are removed by being transformed, or by being vaporized. - “Reforming” in cases where the light-emitting
layers 17 are constituted of a single material that is not formed by codeposition of guest materials or host materials may be that at least a portion of the components constituting theEL elements 22 or the light-emittinglayers 17 produces decomposition or polymerization, or produces change in the molecular structure, altering the physical properties. It may also be that the light-emitting-layer material is vaporized etc. to remove the material from deposited locations. Alternatively, it may be that the film layers constituting theEL elements 22 are removed by being decomposed, by being transformed, or by being vaporized. - The present invention forms the light-emitting
layers 17 without employing any vapor-depositionfine masks 251. The light-emittinglayers 17 are formed in common, continuously in pixels of a plurality of colors. The light-emittinglayers 17 corresponding to the positions of thepixel electrodes 15 are irradiated with alaser beam 59 or the like to reform the light-emittinglayers 17 and change the emission color of the light-emittinglayers 17 in thepixels 37. - Not employing any vapor-deposition
fine mask 251 means that microlithography-mask misregistration is not an issue, thanks to which there is no occurrence of color adulteration in thepixels 37. What is more, since mechanisms and devices for aligning the vapor-depositionfine mask 251 are not necessary, manufacturing apparatus costs may be curtailed. A still further advantage is that with microlithography-mask positioning time being nil, manufacturing Takt time may be shortened. -
FIG. 1 is a sectional structure diagram of an EL display panel in a first embodiment example of the present invention. -
FIG. 2 is equivalent-circuit diagrams for blocks and pixels in an EL display panel of the present invention. -
FIG. 3 is diagrams for explaining an EL Display-Panel manufacturing method of the present invention. -
FIG. 4 is a diagram for explaining a vapor deposition apparatus and a laser device in the manufacture of an EL display panel of the present invention. -
FIG. 5 is a diagram for explaining the laser device in the manufacture of an EL display panel of the present invention. -
FIG. 6 is a diagram for explaining the laser device in the manufacture of an EL display panel of the present invention. -
FIG. 7 is diagrams for explaining an EL Display-Panel manufacturing method of the present invention. -
FIG. 8 is diagrams for explaining an EL Display-Panel manufacturing method of the present invention. -
FIG. 9 is diagrams for explaining an EL Display-Panel manufacturing method of the present invention. -
FIG. 10 is diagrams for explaining operations in the manufacture of the EL display panel in the first embodiment example of the present invention. -
FIG. 11 is diagrams for explaining an EL Display-Panel manufacturing apparatus of the present invention. -
FIG. 12 is diagrams for explaining an optical illuminator in an EL Display-Panel manufacturing apparatus of the present invention. -
FIG. 13 is diagrams for explaining an EL Display-Panel manufacturing apparatus of the present invention. -
FIG. 14 is a sectional structure diagram of an EL display panel in a second embodiment example of the present invention. -
FIG. 15 is diagrams for explaining operations in the manufacture of the EL display panel in the second embodiment example of the present invention. -
FIG. 16 is a sectional structure diagram of an EL display panel in a third embodiment example of the present invention. -
FIG. 17 is diagrams for explaining operations in the manufacture of the EL display panel in the third embodiment example of the present invention. -
FIG. 18 is a diagram for explaining a transfer device in an EL display-panel manufacturing apparatus of the present invention. -
FIG. 19 is a diagram for explaining a method of manufacturing an EL display panel in a fourth embodiment example of the present invention. -
FIG. 20 is a diagram for explaining the method of manufacturing an EL display panel in the fourth embodiment example of the present invention. -
FIG. 21 is diagrams for explaining operations in the manufacture of the EL display panel in the fourth embodiment example of the present invention. -
FIG. 22 is a sectional structure diagram of an EL display panel in a fifth embodiment example of the present invention. -
FIG. 23 is diagrams for explaining operations in the manufacture of the EL display panel in the fifth embodiment example of the present invention. -
FIG. 24 is a sectional structure diagram of an EL display panel in a sixth embodiment example of the present invention. -
FIG. 25 is diagrams for explaining operations in the manufacture of the EL display panel in the sixth embodiment example of the present invention. -
FIG. 26 is a sectional structure diagram of an EL display panel in a seventh embodiment example of the present invention. -
FIG. 27 is diagrams for explaining operations in the manufacture of the EL display panel in the sixth seventh embodiment example of the present invention. -
FIG. 28 is sectional structure diagrams of EL display panels in other embodiment examples of the present invention. -
FIG. 29 is explanatory views of display devices utilizing EL display panels of the present invention. -
FIG. 30 is a sectional structure diagram of a conventional EL display panel. -
FIG. 31 is diagrams for explaining operations in the manufacture of a conventional EL display panel. - In the present specification and drawings, constituent elements that exhibit the same or similar functions are labeled with the same or similar reference marks. Also, there are instances where description that would be redundant among the different embodiment examples is omitted.
- In the description of an embodiment example in the present specification, the explanation will center on items of distinction over, or points that differ from, the other embodiment examples. Items that have been set forth in an embodiment example of the present invention can be applied to the other embodiment examples that are given in the present specification. They also can be combined with the other embodiment examples given in the present specification.
- In EL display panels and display devices of the present invention,
red pixels 37R,green pixels 37G, andblue pixels 37B are arranged in the form of a matrix in adisplay screen 36. EL display panels and EL display devices of the present invention are not, however, limited to implementations in which the pixels are arranged in the form of a matrix. As long as itsdisplay screen 36 has a plurality of color sections, an implementation comes under the technical category of the present invention. For example, the display panel may have yellow pixels 37Y andblue pixels 37B patterned in a matrix. Further, the implementations are not limited to having display panels in which the pixels are arranged in matrix form; they may have an EL display panel that displays predetermined letters/characters and shapes. It is sufficient that the EL display panel have a display unit for a first color and a first display unit for a second color. - In addition, since in the present invention the light-emitting-layer material etc. is reformed by a portion of the display region being irradiated with a laser beam or the like, an EL display panel or the like having light-emitting regions and reformed, non-light-emitting regions also comes under the technical category of the present invention.
- With EL-display-panel manufacturing apparatuses or manufacturing methods of the present invention, as long as “reforming” is the directing of light onto a portion of the built
EL elements 22 and the light-emittinglayer 17 to “reform” the locations that are irradiated with the light, the technical concepts of the present invention may be applied to any panel structure and geometry. That the technical concepts may also be applied to, e.g., an EL display panel having a monochrome text display is a matter of course. - While the present invention is described as being that after a light-emitting
layer 17 is formed by vapor deposition and associated operations, the light-emittinglayer 17 is irradiated with a laser beam, etc. to “reform” the light-emittinglayer 17, the present invention is not thereby limited. For example, the light-emittinglayer 17 may be irradiated with a laser beam, etc. to “reform” the light-emittinglayer 17 even as theEL elements 22 and the light-emittinglayer 17 are being formed through vapor deposition and associated operations. - The irradiation of the light-emitting
layers 17 with thelaser beam 59 is implemented in a vacuum. It should be understood that the process may be implemented under a nitrogen or argon atmosphere containing 20 ppm or more to 200 ppm or less oxygen. Implementing the reforming within from 20 or more to 200 or less ppm oxygen renders the reforming time shorter-term. -
FIG. 2 is a structural diagram of an EL display panel, and equivalent circuit diagrams for pixels, of the present invention.Red pixels 37R,green pixels 37G, andblue pixels 37B are arranged in matrix form in thedisplay screen 36. -
Pixel electrodes 15R andreflective films 12R are formed in or arranged on thered pixels 37R;pixel electrodes 15G andreflective films 12G are formed in or arranged on thegreen pixels 37G; andpixel electrodes 15B andreflective films 12B are formed in or arranged on theblue pixels 37B. -
FIG. 2A is the structural diagram of an EL display panel of the present invention, andFIGS. 2B and 2C are the equivalent circuit diagrams for thepixels 37.FIG. 2B is an equivalent circuit diagram for cases where thetransistors 21 constituting thepixels 37 consist of p-channel transistors.FIG. 2C is an equivalent circuit diagram for cases where thetransistors 21 constituting thepixels 37 consist of n-channel transistors. Both n-channel transistors and p-channel transistors may be utilized to constitute thepixels 37. - In the
pixels 37, thin-film transistors (TFTs) 21 a and 21 b, acapacitor 23, and anEL element 22 are formed.Switching transistor 21 a functions as a switching element that supplies to the gate terminal of drivingtransistor 21 b a video signal that thesource driver circuit 32 outputs. The drivingtransistor 21 b functions as a driving transistor that supplies current to theEL element 22. - In each
pixel 37 the gate terminal of the switchingtransistor 21 a is connected to a gate-signal line 34, and the source terminal and the drain terminal of the switchingtransistor 21 a are connected to a source-signal line 35 and to the gate terminal of the drivingtransistor 21 b. - The source terminal and the drain terminal of the driving
transistor 21 b are connected to an electrode to which an anode voltage Vdd is applied and to the anode terminal of theEL element 22. - The anode terminal of the
EL element 22 is connected to the drain terminal and to the source terminal of the drivingtransistor 21 b, and the cathode terminal of theEL element 22 is connected to acathode electrode 19 to which a cathode voltage Vss is applied. - While in the present specification, the driving
transistors 21 b and the switchingtransistors 21 a are described as being thin-film transistors, they are not limited to being thin-film transistors and may be transistors formed on a silicon wafer. Thetransistors 21 may be FETs, MOSFETs, MOS transistors, or bipolar transistors. - The anode electrodes (pixel electrodes) 15 constituting the
EL elements 22 as illustrated inFIG. 1 are formed of ITO as a transparent electrode.Reflective films 12 are formed on the underlayer of thepixel electrodes 15. Thecapacitors 23 may be formed with thereflective films 12 and thepixel electrodes 15 being the electrodes. It is not necessary that thereflective film 12 be an electrode, as long as it is a film that reflects light. For example, a reflective film consisting of a multilayer membrane as with dichroic mirrors serves to illustrate. - Varying the film thickness of insulating
films 14 in the red, green, andblue pixels 37 makes it possible to vary the storage capacitances C in the red, green, andblue pixels 37. - It should be noted that the
pixel electrodes 15 are not limited to being transparent electrodes, and may be formed of aluminum, silver, or other metallic material. In that case, thepixel electrodes 15 are rendered reflective films. Also, thereflective films 12 and thepixel electrodes 15 may be formed by lamination. - While the present specification has it that insulating
films 14 are formed between thepixel electrodes 15 and thereflective films 12, this is not limiting. As long as it behaves like a light-permeable substance, 14 may be any material. It may for example possess electrical conductivity. - The
pixel electrodes 15R correspond to thepixels 37R inFIG. 2 ; likewise, thepixel electrodes 15G correspond to thepixels 37G, and thepixel electrodes 15B correspond to thepixels 37B. - The technical concepts behind the manufacturing apparatuses, manufacturing methods, EL display panels, etc. of the present invention are also applicable to bottom-emitting
EL elements 22 rendered withoutreflective films 12, but with thecathodes 19 as reflecting membranes, and such that light is extracted only from the lower-electrode side. - The
TFT substrate 52 is a glass baseplate on which thetransistors 21, thepixel electrodes 15, and associated constituents are formed. It should be understood that in some implementations instead of a glass baseplate, the substrate consists of a synthetic resin. It may be, for example, a substrate formed of a polyimide resin. It may also be a substrate onto the planar surface of which a varnish has been coated and hardened. It may likewise be a substrate consisting of a metallic material or a ceramic material. - It should be understood that while in the present specification, an example in which the light-emitting
layers 17 etc. are formed on aTFT substrate 52 is described to illustrate, the present invention is not limited to EL display panels utilizing aTFT substrate 52. They may be, for example, simple-matrix EL display panels in which TFTs are not formed, or a text-displaying EL display panels that display fixed letters/characters. -
FIG. 1 is a sectional configuration diagram of an EL display panel of the present invention. Thepixels 37 made up of thetransistors 21 etc. are formed atop theTFT substrate 52, and over them, aplanarizing film 28 made from, as one example, a photosensitive resin is provided. Thereflective films 12 may be formed on the underlayer of theplanarizing film 28 or may be formed above theplanarizing film 28. - The
red pixel electrodes 15R,green pixel electrodes 15G, andblue pixel electrodes 15B are created by forming a transparent conductive film consisting of ITO or IZO atop theplanarizing film 28 and patterning the transparent conductive film. Thepixel electrodes 15 are made electrically conductive with one of the terminals of the drivingtransistors 21 b through contact holes (not illustrated) in theplanarizing film 28. - The insulating
films 14 formed on the underlayer of eachpixel electrode 15 have a film thickness that is for adjusting the optical distance L of the EL elements. The present invention is a configuration in which in the insulatingfilms 14 on the underlayers of thepixel electrodes 15 for a plurality of colors, the film thicknesses of any of the insulatingfilms 14 are made dissimilar. - Optical distance is also referred to as “optical path length.” It is the distance (physical distance) actually that light advances, multiplied by the refractive index. It should be noted that since there are not significant discrepancies in the refractive indices of the substances in each layer constituting the EL elements for each color, for each EL element of a given color the optical distance L and the physical distance are proportional to each other. Therefore, the optical distance L may be replaced with or read by the physical distance.
- The present invention is a configuration in which in an EL display panel that emits a plurality of colors, a plurality of light-emitting layers is formed on the EL elements for at least one color, distinguishing them from the light-emitting
layers 17 in the EL elements for the other colors, and the optical distances L are made dissimilar. The present invention also is a configuration in which in an EL display panel that emits a plurality of colors, the optical distance L for the EL elements for at least one color is made to differ from the optical distances L for the EL elements for the other colors. - The principal wavelength λ1 nm at which the light-emitting
layers 17R (first light-emitting layers) emit light is longer compared to the principal wavelength λ2 nm at which the light-emittinglayer 17G (second light-emitting layer) emits light. The principal wavelength λ2 is longer compared to the principal wavelength λ3 nm at which the light-emittinglayer 17B (third light-emitting layer) emits light. One example has the color of the light-emittinglayer 17R emission be red, the color of the light-emittinglayer 17G emission be green, and the color of the light-emittinglayer 17B emission be blue. - In the embodiment example illustrated in
FIG. 1 , a light-emittinglayer 17R, a light-emittinglayer 17G, and a light-emittinglayer 17B are formed onto thered pixel electrodes 15R. The distance L1 between thereflective film 12R and the cathode electrode 19R is the optical distance of thered EL elements 22. A light-emittinglayer 17G and a light-emittinglayer 17B are formed onto thegreen pixel electrodes 15G. The distance L2 between thereflective film 12G and the cathode electrode 19G is the optical distance of thegreen EL elements 22. A light-emittinglayer 17G and a light-emittinglayer 17B are formed onto theblue pixel electrodes 15B. The distance L3 between thereflective film 12B and thecathode electrode 19 is the optical distance of theblue EL elements 22. - A light-emitting
layer 17R, a light-emittinglayer 17G, and a light-emittinglayer 17B are formed in common above thered pixel electrodes 15R, thegreen pixel electrodes 15G, and theblue pixel electrodes 15B. The light-emittinglayer 17R is formed in common and as a continuous film in pixels for a plurality of colors (red pixels 37R,green pixels 37G, andblue pixels 37B). In the same way, the light-emittinglayer 17G is formed in common and as a continuous film in the pixels for a plurality of colors, and the light-emittinglayer 17B is formed in common and as a continuous film in the pixels for a plurality of colors. A vapor-deposition coarse mask (not illustrated) is employed to form a light-emittinglayer 17R, a light-emittinglayer 17G, and a light-emittinglayer 17B over theentire display screen 36. Here, the vapor-deposition coarse mask is a mask having an opening for thedisplay screen 36, while not having openings for the pixel units. - Red wavelengths are the longest wavelengths; blue wavelengths are the shortest wavelengths; green wavelengths are intermediate between the wavelengths of reds and blues. Accordingly, the optimum optical distances L with the colors are: optical distance L1 for reds>optical distance L2 for greens>optical distance L3 for blues. The interference order number, nevertheless, with the reds, the greens, and the blues are rendered an identical order number.
- In EL display panels of the present invention, permeable metal films (MgAg) 19 are formed on the electrodes on the light-extraction side, and
reflection films 12 are formed on the reverse side from the light-extraction side. Silver (Ag), a highly reflective metal, is utilized for the reflective films. Further, satisfying L=(2 m (φ/π))×(λ/4) with respect to the optical distance L concentrates in a frontward orientation light of wavelength λ whose extraction is desired. Therein, φ is the phase shift [rad] in the reflective film at reflection; the interference order number m is 0 or a positive integer, and when m=0, the optical distance L assumes the minimum positive value that satisfies the formula; and λ is the emission wavelength. - For the interference order number m either 0 or 1 is selected. Implementations where the interference order number is 0 allow the thickness of the film constituting the EL elements to be thin, reducing the amount of organic material used, and allowing changeover to lower cost to be realized. What is more, chromatic shift depending on the view-angle direction is not liable to occur.
- Hole-
transport layers 16 are formed on thepixel electrodes 15. Hole injection layers (HILs; not illustrated) may be formed between thepixel electrodes 15 and the hole-transport layers 16. - The film thickness of the hole-
transport layers 16 on thepixel electrodes 15 may be made to differ among the red, green, andblue pixels 37. For example, a hole-transport layer 16R is formed atop thepixel electrodes 15R, a hole-transport layer 16G is formed atop thepixel electrodes 15G, a hole-transport layer 16B is formed atop thepixel electrodes 15B, and the film thicknesses of the respective hole-transport layers 16 are made to differ. - In an EL display panel according to the first embodiment of the present invention, as indicated in
FIG. 1 , a red light-emittinglayer 17R, a green light-emittinglayer 17G, and a blue light-emittinglayer 17B are formed over thepixel electrodes 15. - The “reformed” light-emitting
layers 17—for example, the light-emittinglayer 17R and the light-emittinglayer 17G—include mixtures of host materials and guest materials. In the light-emittinglayer 17R and the light-emittinglayer 17G at least either the host materials or the guest materials differ, and the emission colors differ from each other. - The absorption spectrum of the guest material that the light-emitting
layer 17R contains at least partially overlaps the emission spectrum of the light-emittinglayer 17G. The absorption spectrum of the guest material that the light-emittinglayer 17G contain at least partially overlaps the emission spectrum of the light-emittinglayer 17B. - In
FIG. 1 , the light-emittinglayer 17R above thepixel electrodes 15G and thepixel electrodes 15B is reformed. Meanwhile, the light-emittinglayer 17G above thepixel electrodes 15B is also reformed. - The light-emitting
layer 17R above thepixel electrodes 15R inFIG. 1 emits in a red color. The light-emittinglayer 17R above thepixel electrodes 15G and thepixel electrodes 15B does not emit light. The light-emittinglayer 17G above thepixel electrodes 15G emits in a green color. The light-emittinglayer 17G above thepixel electrodes 15B does not emit light. - The light-emitting
layer 17R above thepixel electrodes 15R inFIG. 1 contains light-emitting guest material at a concentration that is higher compared to the light-emittinglayer 17R above thepixel electrodes 15G and thepixel electrodes 15B. - The bulk of the guest material that the light-emitting
layer 17R above thepixel electrodes 15R inFIG. 1 includes is capable of emitting light, while most of the guest material that the light-emittinglayer 17R above thepixel electrodes 15G and thepixel electrodes 15B include is quenched or does not undergo excitation. Alternatively, at least one of either the hole mobility or the hole-injection efficiency of the light-emittinglayer 17R above thepixel electrodes 15R is lesser compared to the light-emittinglayer 17R above thepixel electrodes 15G and thepixel electrodes 15B. - The light-emitting
layer 17G above thepixel electrodes 15R and thepixel electrodes 15G contains light-emitting guest material at a concentration that is higher compared to the light-emittinglayer 17G above thepixel electrodes 15B. Most of the guest material in the light-emittinglayer 17G above thepixel electrodes 15B is quenched or does not undergo excitation. - Alternatively, the electrical properties of the light-emitting
layer 17G above thepixel electrodes 15R and thepixel electrodes 15G differs from those of the light-emittinglayer 17G above thepixel electrodes 15B. At least one of either the hole mobility or the hole-injection efficiency of the light-emittinglayer 17G above thepixel electrodes 15R and thepixel electrodes 15G is lesser compared to the light-emittinglayer 17G above thepixel electrodes 15B. - The bulk of the guest material that the light-emitting
layer 17G above thepixel electrodes 15R and thepixel electrodes 15G includes is capable of emitting light, while most of the light-emitting-layer 17G guest material that the light-emittinglayer 17G above thepixel electrodes 15B includes is quenched or does not undergo excitation. - At least one of either the light-emitting-
layer 17R hole mobility or hole-injection efficiency of the light-emittinglayer 17R above thepixel electrodes 15G and thepixel electrodes 15B is greater compared to the light-emittinglayer 17R above thepixel electrodes 15R. At least one of either the light-emitting-layer 17G hole mobility or hole-injection efficiency of the light-emittinglayer 17G above thepixel electrodes 15B is greater compared to the light-emittinglayer 17G above thepixel electrodes 15R and thepixel electrodes 15G. - While in the present specification, an example where an EL display panel having
EL elements 22 of a structure in which overpixel electrodes 15, hole-transport layers 16, light-emittinglayers 17, and electron-transport layers 18 are formed, andcathode electrodes 19 as common electrodes are formed is described to illustrate, this is not limiting. The EL display panel may haveEL elements 22 of inverse structure in which electron-transport layers 18, light-emittinglayers 17, and hole-transport layers 16 are formed above thepixel electrodes 15, and thecathode electrode 19 as a common electrode is built on. - For implementations whose
EL elements 22 are of inverse structure, in the drawings, and in the present specification and the description it makes, of the present invention, hole-transport layers would necessarily be replaced with electron-transport layers. And hole-injection layers would necessarily be replaced with electron-injection layers. - For implementations where the
EL elements 22 are of inverse structure, in the structural section views of, and in the views for explaining methods of manufacturing, EL display panels of the present invention inFIG. 1 ,FIG. 10 ,FIG. 14 ,FIG. 15 ,FIG. 16 ,FIG. 17 ,FIG. 19 ,FIG. 21 ,FIG. 22 ,FIG. 23 ,FIG. 24 ,FIG. 25 ,FIG. 26 ,FIG. 27 ,FIG. 28 , etc., the views would necessarily be switched the electron-transport layer 18 for the hole-transport layers 16, and the hole-transport layers 16 for the electron-transport layers 18. - The light-emitting
layer 17R above thepixel electrodes 15G and thepixel electrodes 15B is, according to manufacturing methods of the present invention, irradiated withlaser light 59 in the ultraviolet region, the violet region, or the blue region. It is principally the guest material in the light-emittinglayer 17R that absorbs thelaser light 59. - Ultraviolet rays are electromagnetic waves that, being invisible optical rays, are of wavelength from 10 nm to 400 nm, that is, shorter than visible light and longer than soft X-rays. Infrared rays are electromagnetic waves whose wavelength is longer (whose frequency is lower) than the reds among visible light rays, and that are of shorter wavelength than radio waves.
- By the light-emitting
layer 17R absorbinglaser light 59, covalently bonded chains in the layers' guest material are severed. Severing the covalently bonded chains in a vapor-deposition chamber 56 free of oxygen leads to the radicals in the covalently bonded chains creating double bonds. Meanwhile, atoms in other of the covalently bonded chains drop out and bond together. Or they create a crosslinked structure with the other of the covalently bonded chains, producing a change in structure. Further, severing of the covalently bonded chains transforms the material into another substance. Accordingly, the HOMO and LUMO electric potentials of the guest material in the light-emittinglayer 17R are changed, such that guest material in the light-emittinglayer 17R having been irradiated with alaser beam 59 no longer emits light. - The
laser beam 59 has narrow directivity and satisfactory rectilinearity. Light-emittinglayers 17 in apredetermined pixel 37 can therefore be selected and irradiated with thelaser beam 59. In EL display panels including those of the present invention,pixels 37 of identical color are arrayed vertically (from the top toward the bottom of the screen) as illustrated inFIG. 7 etc. While the material of the light-emittinglayers 17 is deposited also between neighboringpixel electrodes 15, source signal lines 35, among other features, are formed between neighboringpixel electrodes 15. Furthermore, a predetermined spacing exists between neighboringpixels 37. Accordingly, even if the size of the laser-beam 59laser spot 91 is large, irradiating of the light-emittinglayers 17 in sideways-neighboring pixels is nonexistent. - Controlling a
mirror galvanometer 62 allows the direction along which thelaser beam 59 is scanned to be controlled with high speed and accuracy. Further, thelaser device 58 is disposed outside the vapor-deposition chamber 56, therefore facilitating maintenance. Thelaser beam 59 is generated outside the vapor-deposition chamber 56, and the generatedlaser light 59 is optically guided into the vacuum inside the vapor-deposition chamber 56 through alaser window 63. Accordingly, the vacuum state inside the vapor-deposition chamber 56 may be maintained optimally. It should be noted that thelaser device 58 may be disposed within the vapor-deposition chamber 56. - Shorter wavelengths of the irradiating beam raise the rate of optical absorption into the material. Since the spot diameter can be narrowed down to near the diffraction limit, a
laser beam 59 whose light wavelength is shorter allows thermal impact on the surroundings when the material is processed to be lessened, suiting it to minute processing work, to enable processing work on ultrahigh-definition EL display panels. - In addition, by scanning the area interior of a
single pixel electrode 15 with thelaser beam 59, the light-emittinglayers 17 etc. can be favorably reformed, coinciding with the geometry of thepixel electrode 15. - The
laser device 58 is preferably a device whose mode of operation is continuous-wave. With a pulsed-mode laser device 58, on the other hand, the pulse energy of the laser beam is intense. In implementations where pixels that are irradiated with thelaser beam 59 are arranged discretely, as with EL display panels in which the pixels are arranged in matrix form, it is preferable to utilize a pulsed-mode laser device 58. - Since the
laser light 59 output from a pulsed-mode laser device 58 is on/off controlled with a Q switch, irregularities in pulse intensity are liable to occur. Consequently, reforming the light-emittinglayers 17 etc. by irradiating the locations being reformed with a plurality of laser pulses is desirable. - In implementations with a pulsed laser, the same location is irradiated with a plurality of pulses. Irradiating the same location with a plurality of pulses averages the energy of the
laser light 59 with which that same location is irradiated, making the condition of the reforming uniform. Here, the lasing interval between laser pulses preferably is from at least 50 nsec to not more than 5 μsec. In addition, the lasing interval between laser pulses preferably is such that the first of the laser pulses puts the light-emittinglayer 17 in a semi-dissolved state, and that with the subsequent laser pulse, the light-emittinglayer 17 is laser-pulse irradiated before turning solid. - In implementations with a continuous wave laser, the same location is irradiated with the laser beam a plurality of times. Irradiating the same location with the
laser beam 59 a plurality of times averages the energy of the laser light with which that same location is irradiated, making the condition of the reforming uniform. Here, the lasing interval of thelaser beam 59 preferably is from at least 50 nsec to not more than 5 pec. In addition, the lasing interval of thelaser beam 59 preferably is such that the first-time irradiating by thelaser beam 59 puts the light-emittinglayer 17 in a semi-dissolved state, and that the subsequent irradiating by thelaser beam 59 is executed before the light-emittinglayer 17 turns solid. - For the
laser device 58, a laser device as one example that can be employed is the laser lift-off (LLO) apparatus commodified by Optopia Co., Ltd. The laser-device laser wavelength in the laser lift-off apparatus is 343 nm, and the line beam length is 750 mm. The line width is 30 the energy density is 250 mJ/cm2, and the pulse width is 15 ns. Accordingly, even with largescale EL display panels, down a one-pixel column (from the upper edge to the lower edge of the screen) thelaser beam 59 can be directed onto the one-pixel column with asingle laser spot 91. A pulse width for thelaser beam 59 of from at least 10 nsec to not more than 80 nsec is appropriate. - Illustrative as other examples of the
laser device 58 are devices utilizing solid-state lasers whose wavelength is 355 nm, and devices utilizing 308-nm excimer lasers. - EL display-device manufacturing methods of the present invention utilize the
laser device 58 to very accurately select thepixels 37 and reform a given light-emittinglayer 17. The light intensity of thelaser beam 59 per unit area is high. Accordingly, the light-emittinglayers 17 etc. can be reformed in a brief time period. - With the present invention, at least in the operational step of forming a light-emitting
layer 17 for a single color, a vapor-depositionfine mask 251 as with conventional manufacturing methods is not employed. Therefore, the problem of color adulteration in the emission color due to misregistration of the vapor-depositionfine mask 251 does not arise. What is more, the cost of the deposition manufacturing apparatus may be reduced. Since no vapor-depositionfine mask 251 is employed, vapor-depositionfine mask 251 positioning is not necessary, making it possible to curtail manufacturing Takt time. - With the present invention, irradiating by the
laser beam 59 produces a change in the combinatorial state of the guest material and host material in the light-emittinglayers 17. Light of wavelength in the ultraviolet region is preferably used for thelaser beam 59. - Manufacturing methods as well as manufacturing apparatuses of the present invention laser the film layers and the light-emitting
layers 17 etc. constituting theEL elements 22 with a laser or other energy beam to reform the layers. - Accordingly, the
EL elements 22 and the light-emittinglayers 17 that thelaser light 59 has irradiated are quenched, or are rendered non-emitting, or else are rendered practically non-emitting. - Recombining of electrons and holes is, in the
pixels 37R, caused to occur in the light-emittinglayer 17R primarily. In thepixels 37G, recombining of electrons and holes is caused to occur in the light-emittinglayer 17G primarily. In thepixels 37B, it is caused to occur in the light-emittinglayer 17B primarily. - In an EL display panel according to the first embodiment example of the present invention, in the
pixels 37R, while recombining of electrons and holes occurs in the light-emittinglayer 17R primarily, there is a possibility that recombining arises in the light-emittinglayers pixel electrodes 15R, the light-emittinglayers - In the
pixels 37R, the guest material that the light-emittinglayer 17R includes absorbs the energy by which the light-emittinglayer 17G and the light-emittinglayer 17B undergo excitation and emits light. The guest material that the light-emittinglayer 17G includes undergoes excitation from absorbing the light that the light-emittinglayer 17B gives off, but does not, for the most part, undergo excitation from absorbing the light that the light-emittinglayer 17R gives off. Further, the guest material that the light-emittinglayer 17B includes for the most part does not absorb the energy by which the light-emittinglayers - In the
pixels 37R, at least a portion out of the excitation energy that the light-emittinglayer 17B gives off is converted into light having the emission spectrum of the guest material that the light-emittinglayer 17R includes. At least a portion of the energy by which the light-emittinglayer 17G undergoes excitation is converted into light having the emission spectrum of the guest material that the light-emittinglayer 17R includes. Accordingly, with the emission color of thepixels 37R being approximately equal to the emission color of the light-emittinglayer 17R, thepixels 37R give off red light. - In the
pixels 37G, while recombining of electrons and holes occurs in the light-emittinglayer 17G primarily, there is a possibility that recombining arises in the light-emittinglayers laser beam 59, the light-emittinglayer 17R above thepixel electrodes 15G do not contain the optically emitting guest material. - Since the light-emitting
layer 17R in thepixels 37G does not contain the optically emitting guest material, no color conversion occurs in the light-emittinglayer 17R. In the light-emittinglayer 17B, the aforementioned color conversion is produced. Accordingly, with the emission color of thepixel electrodes 15G being approximately equal to the emission color of the light-emittinglayer 17G, thepixel electrodes 15G give off green light. - In the
pixels 37B, while recombining of electrons and holes occurs in the light-emittinglayer 17B primarily, there is a possibility that recombining arises in the light-emittinglayers laser beam 59, the light-emittinglayers pixel electrodes 15B do not contain the optically emitting guest material, consequently only the light-emittinglayer 17B emits light. - Since the light-emitting
layer 17R and the light-emittinglayer 17G in thepixels 37B do not contain the optically emitting guest material, no color conversion occurs in the light-emittinglayers pixels 37B being approximately equal to the emission color of the light-emittinglayer 17B, thepixel electrodes 15B give off blue light. - As indicated by the
FIG. 3A graph, for the host material, a material that does not readily absorb thelaser light 59 is selected, while for the guest material, one that does readily absorb thelaser light 59 is. Alternatively, a wavelength that the host material does not readily absorb, yet that the guest (dopant) material does readily absorb is selected for the wavelength of thelaser light 59. - Preferably, the host material and the guest material are selected to be in a relationship in which, as graphed in
FIG. 3A , when the absorptivity of the guest material is at least 75%, the absorptivity of the host material is not greater than 25%. It should be noted that inFIG. 3 , the optical absorptances (%) of the guest materials and the host material are normalized and graphed with the optical absorptance when maximum being 100%. - In
FIG. 3A , guest material A is an example of a material having the property that its absorptivity (%) increases at wavelengths of 400 nm or less, and having an absorptivity of at least 75% at the wavelength of thelaser beam 59. Guest material B is an example of a material having an ideal absorptivity at, and in the proximity of, the wavelength of thelaser light 59. - The laser-light wavelength, and the guest material and the host material are selected so that at the wavelength of the
laser light 59, the optical absorptivity of the guest material and the optical absorptivity of the host material are in a relationship where the one is at least three times the other, preferably in a relationship where the one is at least four times the other. - For example, given a guest-material optical absorptivity of 75% and a host-material optical absorptivity of 25% with
laser light 59, then 75%/25%=3 times. Given a guest-material optical absorptivity of 50% and a host-material optical absorptivity of 10% withlaser light 59, then 50%/10%=5 times. - It should be understood that the features explanatorily illustrated by
FIG. 3 are of course also applicable in other embodiment examples of the present invention. - For the wavelength of the
laser beam 59, the optical absorptivity (%) of the hole-transport layer must also be taken into consideration. The light-emittinglayers 17 are formed over the hole-transport layers 16, and the light-emittinglayers 17 are irradiated with thelaser beam 59. In some instances, during that process the hole-transport layer 16 may be irradiated withlaser light 59 having permeated the light-emittinglayers 17. The hole-transport layer 16 absorbinglaser light 59 can lead to the possibility of the hole-transport layer 16 undergoing a change in properties. - Accordingly, as indicated in the
FIG. 3B graph, for the hole-transport layer 16 material, preferably a hole-transport layer 16 material is selected so that there will be the sort of relationship as with the host material where, when the laser-light 59 optical absorptivity of the guest material is at least 75%, the laser-light 59 optical absorptivity of the host material is not greater than 25%. - The present invention is not limited to configurations in which the light-emitting
layers 17 are formed from a guest material and a host material. In some implementations, the light-emittinglayers 17 are formed by a single material. In implementations where the light-emittinglayers 17 are formed by a single material, that single material is reformed. - A technical concept behind the present invention would be irradiating the organic films forming the
EL elements 22 with alaser beam 59 or the like to reform the light-emittinglayers 17 etc. Doing so requires a relationship between the laser-light 59 optical absorptivities of the light-emittinglayers 17 and of the hole-transport layer material. That is, as indicated in theFIG. 3B graph, the wavelength of thelaser light 59 necessitates a relationship between the optical absorptivity (%) of the hole-transport layer and the optical absorptivity (%) of the light-emittinglayers 17. - Accordingly, it is preferable to select a hole-transport layer material so that there will be a relationship where, as graphed in
FIG. 3B , when the laser-light 59 optical absorptivity of the material in the light-emittinglayers 17 is at least 75%, the laser-light 59 optical absorptivity of the hole-transport layer material is not greater than 25%. - In
FIG. 3B , light-emitting layer material A is an example of a material having the property that its absorptivity (%) increases at wavelengths of 400 nm or less, and having an absorptivity of at least 75% at the wavelength of thelaser beam 59. Light-emitting layer material B is an example of a material having an ideal absorptivity at, and in the proximity of, the wavelength of thelaser light 59. For the hole-transport layer material, that makes the optical absorptivity at the wavelength of thelaser beam 59 not greater than 25%. - The foregoing gives the material that constitutes the light-emitting
layers 17 and the material that constitutes the hole-transport layers a difference in optical absorptivity of 75%/25%=3 times or more at the wavelength of the reforming beam (laser light 59 or the like). It is preferable that the difference in optical absorptivity be 4 times or more. - The laser light wavelength, the light-emitting layer material, and the hole-transport layer material are selected so that at the wavelength of the
laser beam 59, the relationship between the optical absorptivity of the light-emittinglayers 17 and the optical absorptivity of the hole-transport layers will be three times or greater. - For example, given a light-emitting
layer 17 optical absorptivity of 75% and hole-transport-layer material optical absorptivity of 25% withlaser light 59, then 75%/25%=3 times. Given a light-emittinglayer 17 optical absorptivity of 50% and a hole-transport layer optical absorptivity of 10% withlaser light 59, then 50%/10%=5 times. - In the embodiment of
FIG. 1 , as far as the light-emitting layers above thepixel electrodes 15R are concerned, the red light-emittinglayer 17R emits red light. The green light-emittinglayer 17G and the blue light-emittinglayer 17B do not emit light. The red light-emittinglayer 17R is “emitting,” the green light-emittinglayer 17G is “quenched,” and the blue light-emittinglayer 17B is “quenched.” - As far as the light-emitting layers above the
pixel electrodes 15G are concerned, the green light-emittinglayer 17G emits green light. The red light-emittinglayer 17R and the blue light-emittinglayer 17B do not emit light. The red light-emittinglayer 17R is “quenched,” the green light-emittinglayer 17G is “emitting,” and the blue light-emittinglayer 17B is “quenched.” - As far as the light-emitting layers above the
pixel electrodes 15B are concerned, the blue light-emittinglayer 17B emits blue light. The red light-emittinglayer 17R and the blue light-emittinglayer 17B do not emit light. The red light-emittinglayer 17R is “quenched,” the green light-emittinglayer 17G is “quenched,” and the blue light-emittinglayer 17B is “emitting.” - For the hole-
transport layers 16, which function to transport holes to the light-emittinglayers 17, so that excitation energy does not travel from the light-emittinglayers 17 because the hole-transport layers are in contact with the light-emitting layers, and further does not interact with other layers to form an exciplex, a material having an energy band gap larger than that of the light-emittinglayers 17 is utilized. Illustrative of such materials are, e.g., TPD, α-NPD, NBP, and TCTA. - The hole injection layer has a HOMO level between the HOMO level of the hole-
transport layer 16 and the work function of the anode, and functions to lower the injection barrier to tunneling from the anode to the organic layer. - Electron-
transport layers 18 are formed over the light-emittinglayers 17. Electron-injection layers (EILs; not depicted) may be formed between the electron-transport layers 18 and thecathode electrodes 19. The types of electron-transport layer 18 may be made distinct among thered pixels 37R, thegreen pixels 37G, and theblue pixels 37B. - The electron-
transport layers 18 possess functionality for injecting and transporting electrons from the cathode electrodes (cathodes) 19. As with the hole-transport layer 16, a material having a wide band gap is likewise preferable. As materials for the electron-transport layer 18, tris(8-hydroxyquinolinato)aluminum (Alq3), or derivatives or metallic coordination complexes thereof may be cited as examples. - The light-emitting
layers 17 are regions where when a voltage is applied to the pixel electrodes (anodes) 15 and the cathode electrodes (cathodes) 19, holes injected from the anode side and electrons injected from the cathode side recombine. Specifically, the light-emitting layers may be constituted by single layers composed of one type or two or more types of these light-emitting materials, or may be a laminate of light-emitting layers composed of a chemical compound of a type different from that or those of the single-layer light-emitting layers. - In instances where the
EL elements 22 form a resonator structure, the emission light, having caused multiplex interference between the light-reflecting surface of thecathodes 19 and the light-reflecting surface of the reflectingfilms 12, constituted to be semitransparent/semi-reflective, is extracted from thecathode 19 side. The optical distance L between the light-reflecting surface of the reflectingfilms 12 and the light-reflecting surfaces on thecathode 19 side is defined by the wavelength of light whose extraction is desired, with the film thickness and interference conditions for each layer being determined so as to satisfy this optical distance L. - In the
FIG. 1 embodiment example, the insulatingfilms 14 in thered pixels 37R, thegreen pixels 37G, and theblue pixels 37B are adjusted so as to create optical distances L in thered pixels 37R, thegreen pixels 37G, and theblue pixels 37B whereby optical cavity effects are maximally exhibited. Nevertheless, the present invention is not thereby limited. -
FIG. 28A is an embodiment example in which the interference order number in the red (R) pixels and the green (G) pixels are created at the zeroth order, and the interference order number in the blue (B) pixels at the first order. - The film thicknesses of the insulating
films 14 are formed differentiating by red (R) pixels and green (G) pixels. Further, the hole-transport layers (HTL) in the blue (B) pixels are formed thicker. The hole-transport layers are not formed by a single-cycle deposition, but are formed by a plural-cycle depositions. Also, the hole-transport layers formed by plural-cycle depositions may be created with differing hole-transport layer materials. - The cavity-effect exhibiting optical distances L the are made proportional to the emission wavelengths. Red wavelengths are longer than green wavelengths, and green wavelengths are longer than blue wavelengths. Accordingly, given that the interference order numbers are identical, the red optical distance L1 is longer than the green optical distance L2, and the green optical distance L2 is longer than the blue optical distance L3.
- The film thickness of the
EL elements 22 is on the order of 100 nm. Given that the interference order number is the zeroth order, the film thickness of theblue pixels 37B will be thinnest. A thin optical distance L is liable to give rise to defects due to dust and the like during manufacturing. Consequently, compared with thered pixels 37R, the occurrence of defects in theblue pixels 37B is frequent, such that EL display-panel yields are degraded by defects in theblue pixels 37B. - In the manner of the embodiment example of
FIG. 28A , by having the interference order number for theblue pixels 37B be the first order and making the film thickness of theEL elements 22 thicker than those of the pixels of the other colors, EL display-panel yields may be improved. What is more, in the red (R) pixels, the green (G) pixels, and the blue (B) pixels, since optimum optical distances L corresponding to the emission wavelengths may be realized, optical cavity effects may be exhibited, realizing ideal color reproducibility. - It should be noted that with
FIG. 28A , while the interference order number for the blue (B) pixels among the three colors is rendered the first order, the present invention is not thereby limited, and as inFIG. 28B , the interference order numbers for the red (R) pixels, the green (G) pixels, and the blue (B) pixels all together may be made the first order. Furthermore, configurations differentiating film thicknesses in the red (R) pixels, the green (G) pixels, and the blue (B) pixels are not limited to a film layer in common to each; in the red (R) pixels it may be the transport layer (HTL); in the green (G) pixels it may be the light-emitting layer (EML); and in the blue (B) pixels it may be the insulatingfilm 14B. - Further, the interference order number in the red (R) pixels, the green (G) pixels, and the blue (B) pixels may be the same, as indicated in
FIG. 28C , and the optical distance L may be adjusted with a film layer in common among them.FIG. 28C is an embodiment example in which the interference order number for the red (R) pixels, the green (G) pixels, and the blue (B) pixels is made in common the zeroth order, and in which the insulating films in the red (R) pixels, the green (G) pixels, and the blue (B) pixels are differentiated to realize optimal optical cavity effects, realizing ideal color reproducibility. The blue (B) pixels may adequately lack an insulating film. Thereflective films 12B and thepixel electrodes 15B are stacked together. - Further, it will be understood that, as indicated in
FIG. 28D , the interference order numbers in the red (R) pixels, the green (G) pixels, and the blue (B) pixels may be differentiated, with the interference order number in a plurality of the colors being the first order. The red (R) pixels have an interference order number that is the zeroth order, and the green (G) pixels and blue (B) pixels have an interference order number that is the first order. In the green (G) pixels, the light-emittinglayer 17G is formed thicker, and in the blue (B) pixels, the insulatingfilms 14B are formed thicker. - Banks (sidewalls) 95 are formed on the perimeter of the
pixel electrodes 15. Thebanks 95 are created with the objective, primarily, of preventing the vapor-depositionfine masks 251 from coming into contact with thepixel electrodes 15 and like features when the vapor-depositionfine masks 251 are set into place, and of preventing the light-emittinglayers 17 between neighboring pixels from becoming intermixed. - It should be understood that, as is the case with the present invention, not employing vapor-deposition
fine masks 251—given that the light-emittinglayers 17 are reformed by being irradiated with thelaser beam 59 or other narrow-directivity beam, given that no color adulteration between pixels arises, or given that color adulteration between pixels may be prevented or kept under control, etc. etc.—means that as indicated inFIGS. 26 and 27 ,banks 95 need not be created. - It should be noted that the manufacturing apparatuses, manufacturing methods, EL display panels etc., of the present invention have been describing, as an illustrative example, a top-emitting type EL panel in which
reflective films 12 are formed, and light generated in the light-emittinglayers 17 is extracted through the transparent cathode-electrode 19 side. The present invention is not thereby limited, however, and may be applied to a bottom-emitting EL display panel rendered to have thecathodes 19 be reflective films, so that light is extracted only from the lower electrode side. -
FIG. 4 is a configurational diagram and an explanatory diagram of a vapor deposition apparatus for an EL display-panel manufacturing apparatus of the present invention. An EL display-panel deposition apparatus of the present invention has adeposition chamber 56 furnished with ametal evaporation source 65 and anorganic evaporation source 66. Thedeposition chamber 56 is furnished with a slidingstage 51 for retaining theTFT substrate 52, a temperature-adjustingplate 53 for retaining theTFT substrate 52 at or adjusting it to a predetermined temperature, a vacuum pump (vacuum exhaust device) 54, and anexhaust duct 55 that ties thevacuum pump 54 and the vapor-deposition chamber 56. - In a film-forming tool 116 (referring to
FIG. 11 ), the vacuum levels in the vapor-deposition chamber 56, atransfer device chamber 117, and alaser device chamber 118 preferably are kept down to a level of at least 1×10′ Pa vacuum. More preferably, maintaining the chambers at vacuum level of at least 1×10′ Pa is favorable. - Under a high vacuum, due to the phenomenon that boiling points drop, the boiling point (sublimation point) is lowered, but the energy whereby the CC bonds and other chemical bonds constituting organic molecules dissociate/break down is not affected. Given these facts, even with organic materials that in the air do not break down and cannot sublimate (vaporize), film formation is made possible by heating the materials in a high-vacuum situation where oxygen has been eliminated, to sublimate them readily and build thin films onto substrates.
- What is more, because the vapor-deposited organic material is in a high-vacuum situation where oxygen has been eliminated, irradiating it with a laser beam yet promotes the necessary chemical change in the organic material. Accordingly, despite the irradiating with a laser beam, there is no encroachment of oxidation reactions that would lead to carbonization.
- So that organic materials of two kinds may be made into films by codeposition, a plurality of vapor-deposition power sources and film-thickness gauges for the host material and for the guest material are installed.
- As to the
laser beam 59 that thelaser device 58 has generated, the intensity of thelaser beam 59 is adjusted with anoptical density filter 60, as indicated inFIG. 4 . For thelaser light 59 that reforms the light-emittinglayers 17, primarily alaser beam 59 in the ultraviolet wavelength region is adopted. - The features relating to the
laser device 58, explanatorily illustrated byFIG. 4 etc., may be applied as a device, explanatorily illustrated byFIG. 20 , for removingdeposits 201 or a device for reformingdeposits 201. - As the
optical density filter 60, a variable attenuator employing a polarizing beam splitter illustrates an example. The transmittance (reflectance) is changed by rotating a V2 wave plate that is in front of the polarizing beam splitter. - The
laser beam 59 that thelaser device 58 generates is shaped with acylindrical lens 61 to be rectangular or elliptical as required. The beam is also shaped with a slit mask to be roughly rectangular or circular to match it approximately to the pixel geometry. - The
laser light 59, with its intensity having been adjusted by theoptical density filter 60, is incident on themirror galvanometer 62. Themirror galvanometer 62 scans thelaser beam 59 over an xy two-dimensional area (theTFT substrate 52 or a donor film 197). In themirror galvanometer 62, a couple of motors (rotary encoders) that scan thelaser beam 59 in the x- and y-axis directions are employed. - The
laser beam 59 enters the vapor-deposition chamber 56 through alaser window 63 disposed in the vapor-deposition chamber 56. Thelaser beam 59 is shone onto theTFT substrate 52 in a high-vacuum state. Thelaser window 63 is formed of quartz glass. - The
laser device 58 is disposed within the atmosphere external to the vapor-deposition chamber 56, where thelaser beam 59 is introduced through thelaser window 63 into the vacuum within the vapor-deposition chamber 56. Accordingly, operation and maintenance of thelaser device 58 are facilitated. - An fθ (f-theta)
lens 64 is deployed as a lens for focusing thelaser beam 59 onto theTFT substrate 52. By the reforming of the lens-surface curvature of thefθ lens 64, the lens is designed so that the scanning speed will be constant along the lens periphery and in its center. - The direction of the
laser beam 59 generated by thelaser device 58 is varied by themirror galvanometer 62, and through thefθ lens 64, the laser beam is cast onto the surface of theTFT substrate 52 or thedonor film 197. - As indicated in
FIG. 5 , the position of thefθ lens 64 is changed along the interval fromfθ lens 64 a tofθ lens 64 b as required. By the position of thefθ lens 64 being changed, the focus position of thelaser beam 59 may be varied. Likewise, the position of the slidingstage 51 is changed along the interval from slidingstage 51 a to slidingstage 51 b. By the position of the slidingstage 51 being changed, the focus position of thelaser beam 59 may be varied. Changing the focus position allows the lasing coverage by thelaser beam 59 and the size oflaser spot 91 to be varied. -
FIGS. 5 and 6 are explanatory diagrams for describing a method for reforming the light-emittinglayer 17 etc. by means of thelaser device 58. As illustrated inFIG. 6 , an apparatus for carrying out reforming includes abeam detection device 77 and abeam control device 78. - The
laser device 58 generates alaser beam 59. Thelaser beam 59 is incident on a beam-splittingmirror 72 b. The beam-splittingmirror 72 b functions like a half-silvered mirror, for monitoring the intensity of thelaser light 59 generated by thelaser device 58. The beam-splittingmirror 72 b reflects a predetermined proportion of the laser light from thelaser beam 59. - The
laser light 59 b reflected by the beam-splittingmirror 72 b is reflected by a mirror 73 b, concentrated by a lens 74 c, and incident on anoptical amplifier circuit 76 b. -
FIG. 6B is a circuit diagram of theoptical amplifier circuit 76. Theoptical amplifier circuit 76 includes a photodiode (PD), anoperational amplifier 81, resistors R, a capacitor C, and associated components. In theoptical amplifier circuit 76, thelaser light 59 b is photoelectrically converted by the photodiode (PD). The laser light having been photoelectrically converted is amplified and turned into an analog signal voltage V2. The analog signal voltage V2 is converted into a digital signal by an A/D conversion circuit 80 b, which is input into alaser control circuit 79. - The
laser control circuit 79, detecting the relative strength of thelaser beam 59, feedback-controls thelaser device 58 so that the beam strength will be a predetermined intensity setting or within a predetermined intensity range. The feedback control conditions the intensity of thelaser beam 59 to be within a predetermined settings range. - Laser light 59 a from the
laser device 58 penetrates the beam-splittingmirror 72 b and a beam-splittingmirror 72 a, is guided into the vapor-deposition chamber 56 through thelaser window 63 in the vapor-deposition chamber 56, and strikes the light-emittinglayer 17 that is the object of the reforming process. - The beam-splitting
mirror 72 a functions as a spectrally selective mirror. A multilayer optical film is formed on the front side of the beam-splittingmirror 72 a and has the functions of transmitting wavelengths in a given band as well as reflecting wavelengths in a given band. The beam-splittingmirror 72 a transmits thelaser light 59 a and reflects fluorescent/phosphorescent-wavelength light 71 from excitation in the light-emittinglayer 17. - The fluorescent/phosphorescent-
spectrum light 71 is concentrated by a lens 74 a, its direction is bent by a mirror 73 a, and it is concentrated by alens 74 b. Anoptical filter 75 transmits only wavelengths within a fixed range among those of theconcentrated light 71. Theoptical filter 75 is employed to undergo excitation and detect the optical intensity of the generated wavelengths within a predetermined band range. - The fluorescent/
phosphorescent light 71 transmitted through theoptical filter 75 impinges on the optical amplifier circuit 76 a. Via the photodiode (PD), the optical amplifier circuit 76 a photoelectrically converts the light 71. The photoelectrically convertedradiant energy 71 is amplified and made into an analog signal voltage V1. The analog signal voltage V1 is converted into a digital signal by an A/D conversion circuit 80 a and input into thelaser control circuit 79. - The
laser control circuit 79 detects the relative strength of the fluorescent- or phosphorescent-spectrum light 71 and detects whether the light is at a predetermined intensity setting or within a predetermined intensity range, and if the light is at the predetermined intensity setting or within the predetermined intensity range, thelaser device 58 changes or shifts the lasing position of the irradiatinglaser beam 59 a. It also changes the intensity of thelaser beam 59 a. - The
laser beam 59 a is directed onto the deposited light-emittinglayer 17, whereby undergoing excitation, the light-emittinglayer 17 emits fluorescent/phosphorescent light 71. Thelaser beam 59 a reforms the irradiated light-emittinglayer 17. Reforming the light-emittinglayer 17 lowers the intensity of the fluorescence/phosphorescence 71 that the light-emittinglayer 17 generates. - Accordingly, the
laser beam 59 a dually possesses the functions of both exciting the light-emittinglayer 17 and reforming the light-emittinglayer 17. Especially, because it is light within the ultraviolet region, thelaser beam 59 a readily excites the light-emittinglayer 17. - Because the wavelength of the
laser beam 59 a is fixed, it can be readily separated from the wavelengths of the generated fluorescence/phosphorescence 71. That means that the fluorescent/phosphorescent light 71 is easy detected. Further, the fact that thebeam detection device 77 is equipped with theoptical filter 75 and the beam-splittingmirror 72 a, as illustrated inFIG. 6 , for separating the fluorescence/phosphorescence 71 facilitates detection. - The transmission wavelength of the
optical filter 75 is switched to correspond to the wavelength of the fluorescence/phosphorescence 71 that the light-emittinglayers 17 generates. This is because the amplification factor of the optical amplifier circuit 76 a differs with the wavelength/intensity of the fluorescence/phosphorescence 71 that the light-emittinglayers 17 emit. - With the light-emitting layers, since the wavelength/intensity of the fluorescence/
phosphorescence 71 that the light-emittinglayer 17R emits, the wavelength/intensity of the fluorescence/phosphorescence 71 that the light-emittinglayer 17G emits, and the wavelength/intensity of the fluorescence/phosphorescence 71 that the light-emittinglayer 17B emits differ, they are controlled to optimum values corresponding to the fluorescence/phosphorescence 71 of each light-emittinglayer 17. - Measuring or detecting the intensity of the fluorescence/
phosphorescence 71 allows the status of the reforming of the light-emittinglayer 17 to be grasped. Once the reforming status has exceeded a predetermined set value, the reforming of thepixel 37 that is the object of irradiating by thelaser beam 59 a is determined to be completed, and thelaser beam 59 a is operated to position it onto the next pixel to be reformed. - The
beam detection device 77 and thebeam control device 78 are attached to the same component. Accordingly, along with the movement of the lasing position of thelaser beam 59, thebeam detection device 77 also moves at the same time. It will be appreciated, however, that thebeam detection device 77 may be installed inside thevapor deposition chamber 56, while thebeam control device 78 may be installed outside thevapor deposition chamber 56. - The
optical amplifier circuit 76 may be situated at the rear side of theTFT substrate 52.Laser light 59 c would be detected by anoptical amplifier circuit 76 c disposed to the rear of theTFT substrate 52. Likewise, fluorescence/phosphorescence 71 a would detected by theoptical amplifier circuit 76 c situated along the rear side of theTFT substrate 52. - The
beam detection device 77 is configured so that the angle θ of the lenses 74 that detecting the fluorescence/phosphorescence 71, as indicated inFIG. 6C , may be variable. Varying of the angle θ is conveyed out by a control device installed outside thevapor deposition chamber 56. The angle θ is automatically adjusted to an angle at which the fluorescence/phosphorescence 71 can be detected most strongly. - The positions of the lenses 74 a to 74 b and the beam detection devices 77 a to 77 b are varied or set so that the intensity of the fluorescence/
phosphorescence 71 can be detected most strongly. - It is preferable that the
beam detection device 77 be configured so that it may discriminate not only the intensity but also the wavelength of the fluorescence/phosphorescence 71. For example, the proportion to which the reds' emission wavelength has changed into greens' emission wavelength, or the amount of the change is detected. If it has changed into greens' emission wavelength, reds' emission wavelength resultantly is put into a “quenched” state and may be detected as having become non-emitting. - It should be noted that, distinct from the
laser beam 59 a shone on the light-emittinglayers 17, light for exciting the light-emittinglayers 17 may be separately generated, and the light-emittinglayer 17G may be irradiated with the light. An example that illustrates is a configuration in which a laser-beam 59 generation device for fluorescent/phosphorescent emission is set up separately, and in which thelaser beam 59 is directed onto the light-emittinglayers 17 being reformed. - When the intensity of the generated fluorescence/
phosphorescence 71 goes to a predetermined value or less, the light-emittinglayer 17 has been put into a quenched state. With the layer having been put into a quenched state, the reforming of the light-emittinglayer 17G is determined to be completed, and the lasing position of thelaser beam 59 a is shifted to the next pixel. Further, the time necessary for the reforming is gauged, whereby the intensity of thelaser beam 59 a is controlled. - Monitoring the intensity/wavelength of the fluorescence/
phosphorescence 71 with thebeam detection device 77 makes it possible to put the light-emittinglayer 17 in the pixel that is the object of the reforming very precisely into a quenched state. And because monitoring, with thebeam control device 78, the intensity of thelaser beam 59 that thelaser device 58 outputs makes it possible to put the intensity of the laser light directed onto the light-emittinglayer 17 at a stabilized, constant setting, the light-emittinglayer 17 in the pixel that is the reform target can be put very precisely into a quenched state. - The
laser device 58 has the function of generating light of wavelength from at least 310 nm to not more than 400 nm in the ultraviolet-A (UV-A) proximity, and of directing the generated light onto apredetermined pixel electrode 15. - Thanks to the energy that their photons possess being large, ultraviolet-ray generating laser devices can perform photolytic processing in which irradiating materials (mainly organic substances) that possess areas where the bonds are weak directly dissociates the molecular bonds. In photolytic processing, since the energy striking a workpiece does not heat it, but is used chiefly by the decomposition, the processed surface is left extremely keen. As laser devices that generate light having wavelengths in the ultraviolet region, ultraviolet lasers (frequency-tripled and frequency-quadrupled YAG lasers), solid-state ultraviolet lasers, and excimer lasers illustrate some examples.
- The fact that the
laser beam 59 can be concentrated and directed onto the process site makes it possible readily to reform or vaporize organic material etc. in the process site. Thanks to the vaporizing of the organic material etc. being conveyed out within a vacuum, carbonizing of the organic material is nonexistent, and there is no impact on the area surrounding the site irradiated with the laser beam. - The configuration is preferably such that
laser beam 59 may be shone onto theTFT substrate 52 from above it. Despite the guest material being heated by thelaser beam 59 and the heated guest material sublimating, clinging of the material onto the surrounding area can be kept to a minimum. - A femtosecond laser device may be utilized for the
laser device 58. A femtosecond laser device, a pulse laser, is laser device whose pulse width is at the femtosecond level. - Laser intensity is expressed by I=E/(S·t), wherein E is the pulse energy, S is the surface area of the beam spot, and t is the time width of the laser pulse.
- Unlike CO2 laser devices and YAG laser devices employed in ordinary manufacturing processes, femtosecond laser devices are characterized by nonthermal processes. When a CO2 laser beam or a YAG laser beam strikes a processing-target object, it is worked by the object's molecules absorbing the photoenergy and vibrating, and by the light energy being converted into thermal energy melting and vaporizing the object. In the case of femtosecond lasers, manufacturing processes can be done by virtue of a phenomenon called “ablation” in which molecular bonds are severed by the photoenergy and the molecules are removed without thermally diffusing to the peripheral regions. Accordingly, only the location irradiated with the
laser beam 59 is reformed, with the periphery not being thermally influenced or affected. - The laser-spot size, as indicated by the
laser spot 91 a inFIG. 7 , of thelaser beam 59 could be smaller than thepixel electrodes 15. This is because the entire area of apixel electrode 15 can be irradiated with thelaser beam 59 a by shifting thelaser spot 91 a within thepixel electrode 15. - The distribution of the
laser beam 59 a intensity is a Gaussian distribution. If the entirety of the location that is reformed is irradiated with thelaser beam 59, it is preferable that as graphed inFIG. 7B , the span W1 atintensity 63% in the Gaussian distribution of thelaser beam 59 a be made the width of the light-emittinglayer 17 to be reformed. More preferably, the span W2 atintensity 80% in the Gaussian distribution of thelaser light 59 a is favorably set to the width of the light-emittinglayer 17 to be reformed. - Whether the guest material in the light-emitting
layers 17 will be reformed or vaporized may be easily realized by thelaser device 58 generating and controlling the intensity of thelaser beam 59 directed onto theTFT substrate 52. Varying of thelaser beam 59 a intensity takes place in theoptical density filter 60. Here, theoptical density filter 60 preferably is constituted so that the intensity of thelaser beam 59 a may be varied in units of thelaser beam 59 a pulses. - Having the laser spots be oval or rectangular so as to surround the entirety of a pixel electrode(s) 15, as with 91 b and 91 c in
FIG. 7 is advantageous. Making thelaser beam 59 a elliptical or rectangular may be realized easily by employing thecylindrical lens 61.Laser spot 91 b is of geometry whereby asingle pixel electrode 15 is irradiated over its entire range.Laser spot 91 c is of geometry whereby a plurality ofpixel electrodes 15 is irradiated simultaneously. - Having the laser spot be in stripe form, as with
laser spot 91 d inFIG. 7 , and irradiating theTFT substrate 52 with line oflaser light 59 is also advantageous. - The
laser spot 91 from thelaser beam 59 is directed onto apixel 37 to be reformed, and the position of thelaser spot 91 is shifted to reform the light-emitting-layer guest material or host material in thepixel 37. Alternatively, the host material and the guest material that form the light-emittinglayer 17 are vaporized. - With the horizontal width of the
pixels 37 being a narrow 30 μm or less, in some cases directing the laser-beam 59laser spot 91 onto apixel 37 irradiates a neighboring column ofpixels 37 with the laser light. In those cases, aslit mask 92 as illustrated inFIG. 8 is employed to make it so that the neighboring pixel columns are not irradiated with thelaser light 59. - As illustrated in the plan view and the sectional view of
FIGS. 8A and 8B , with thelaser spot 91 a through the slit in theslit mask 92, thelaser beam 59 is directed onto the light-emittinglayer 17. Thelaser spot 91 a is scanned in the a-direction, whereby the pixels down the pixel column are reformed in sequence. - As illustrated in the plan view and the sectional view of
FIGS. 8C and 8D , with thelaser spot 91 b through the slit in theslit mask 92, thelaser beam 59 is directed onto the light-emittinglayer 17. Thelaser spot 91 a is scanned in the b-direction, whereby the pixels down the pixel column are reformed in sequence. - As illustrated in the plan view and the sectional view of
FIGS. 8E and 8F , with therectangular laser spot 91 c through the slit in theslit mask 92, thelaser beam 59 is directed onto the light-emittinglayer 17. Therectangular laser spot 91 c simultaneously lasers the pixels in a single row of thedisplay screen 36. As to the light-emittinglayers 17 in the pixel example that thelaser light 59 irradiates, the light-emittinglayers 17 in the pixels of a single row are simultaneously reformed. - The
slit mask 92 is shifted to accord with the travel of thelaser spot 91, reforming the light-emittinglayer 17 in a predetermined-color pixel in thedisplay screen 36. Alternatively, thelaser spot 91 is shifted to align with the position of the hole in the slit mask, to reform the light-emittinglayer 17 in a predetermined-color pixel in thedisplay screen 36. - The
slit mask 92 is formed by a thin metal membrane or a synthetic resin film. For this reason, because theslit mask 92 is situated to correspond to the position of thepixels 37, it is necessary to place the mask under tension and retain it in a planar condition. - As shown in
FIG. 9 , atransparent substrate 94 on which is formed a slit-patternedsheet 93 of metal or other suitable material may be utilized. As thetransparent substrate 94, a baseplate that transmits thelaser beam 59 or other light of wavelength in the ultraviolet region is employed. As thetransparent substrate 94, quartz glass, soda-lime glass, and the like illustrate examples. - As illustrated in the plan view and the sectional view of
FIGS. 9A and 9B , through the slit openings in the slit-patternedsheet 93, thelaser beam 59 is directed onto the light-emittinglayer 17. Thelaser beam 59 penetrating the slit openings is of rectangular form and simultaneously illuminates the pixels in a single row of thedisplay screen 36. As to the light-emittinglayers 17 in the pixel example that thelaser light 59 irradiates, the light-emittinglayers 17 in the pixels of a single row are simultaneously reformed - The EL display-panel manufacturing method of the present invention in the first embodiment example will be described.
FIG. 10 is a diagram for explaining the EL display-panel manufacturing method of the present invention in the first embodiment example.FIG. 11 is also a diagram for explaining the EL display-panel manufacturing method of the present invention. As indicated inFIG. 4 , in a manufacturing method of the present invention, theTFT substrate 52 is set into place in a vacuum state such as in thevapor deposition chamber 56. Each of the organic films constituting theEL elements 22 is formed by vapor deposition. - In
FIG. 11 , theTFT substrate 52 is conveyed into the film-formingtool 116 from a convey-inchamber 113. The film-formingtool 116 interior is maintained in an ultra-vacuum state. In the middle of the film-formingtool 116 is acentral chamber 115, and installed in thecentral chamber 115 interior is a transport robot (not illustrated) that conveys TFTs tocompartment chambers 111, as well as conveys them out of thecompartment chambers 111. The transfer robot conveys the slidingstage 51 with associated components out from acompartment chamber 111, changes its direction, and conveys it into acompartment chamber 111 for a subsequent process operation. - The
laser device 58 for reforming the light-emittinglayers 17 etc. is installed inside thelaser device chamber 118, wherein theTFT substrate 52 is conveyed into thelaser device chamber 118 via a load-lock (LL) chamber. Following formation of thecathode electrodes 19 on theTFT substrate 52 or following sealing of the substrate with a sealingmembrane 20 and a sealingfilm 27, the substrate is conveyed out from a convey-outchamber 114. - Having been conveyed in from the convey-in
chamber 113, theTFT substrate 52 is conveyed into a hole-transport-layer 16 deposition chamber (HTL) 111 c. In thecompartment chamber 111 c, as illustrated inFIGS. 10A and 11A , the hole-transport layer 16 is formed over thepixel electrodes 15 on theTFT substrate 52. - Next, the
TFT substrate 52 is conveyed into a compartment chamber (EML (R)) 111 d where emission-layers (EML) R are deposited. By means of a vapor-deposition technique, as illustrated inFIG. 10B the light-emittinglayer 17R is laminated onto the hole-transport layers 16. The light-emittinglayer 17R is formed by codeposition of a host material and a red guest material. - In the manufacturing step of forming the light-emitting
layer 17R, a vapor-depositionfine mask 251R provided with openings in positions corresponding to thepixels 37R, as with conventional manufacturing methods, is not employed. The light-emittinglayer 17R is formed as a continuous film on theentire display screen 36 by the employing of a vapor deposition technique. That is, the light-emittinglayer 17R is formed continuously and in common on thepixel electrodes 15R, thepixel electrodes 15G, and thepixel electrodes 15B. For the formation of the light-emittinglayer 17R, a vapor-deposition coarse mask (not depicted) having an opening for thedisplay screen 36 is employed so that the light-emittinglayer 17R will be vapor-deposited inside thedisplay screen 36. - In the present-invention embodiment examples of
FIG. 10 etc., in the ELdisplay panel banks 95 are depicted, but thebanks 95 are not necessarily required constituent elements. Thebanks 95, formed onto the source signal lines 35, onto thegate signal lines 34, and on the periphery of thepixel electrodes 15, exhibit an electric-field shielding effect. The banks formed of a material into which pigments and dyes that absorb visible light has been added. - The
TFT substrate 52 in thecentral chamber 115 is directionally switched around by the transport robot, then is conveyed into thelaser device chamber 118 via the load-lock chamber 112. - In the
laser device chamber 118, irradiating of the light-emittinglayer 17 on theTFT substrate 52 with thelaser beam 59 a is carried out, as indicated inFIG. 10B . Thelaser beam 59 a is directed onto the light-emittinglayer 17R where it is above thepixel electrodes 15G and thepixel electrodes 15B. Thelaser beam 59 a is not directed onto the light-emittinglayer 17R where it is above thepixel electrodes 15R. Reformed with the lasing portion of thelaser beam 59 a, the light-emittinglayer 17R is made into reformedsections 96 a. - Absorbing the
laser light 59 a, the covalently bonded chains in the guest material in the light-emittinglayer 17R over thepixel electrodes 15G and thepixel electrodes 15B are severed. In the oxygen-free deposition chamber 56, when the covalently bonded chains break, radicals from the covalently bonded chains, creating double bonds, stripping away and bonding with atoms from other covalently bonded chains, and otherwise creating crosslinked structures with other covalently bonded chains, produce change in structure. - The guest material in the light-emitting
layer 17R corresponding to thepixel electrodes 15R is not irradiated with thelaser beam 59 a. Accordingly, as a light-emitting guest material its capacity is maintained. - In exemplary implementations of the present invention, each organic film by which the
EL elements 22 are built is described as being formed by a vapor deposition technique, but the implementations are not thereby limited. It will be appreciated that the electron-transport layers 18, the hole-transport layers 16, and the light-emittinglayers 17 etc. may be formed by an inkjet scheme or a printing scheme. For example, for the light-emittinglayer 17, a host material and a guest material are dissolved in a solvent and by an inkjet scheme are formed over thepixel electrodes 15 as the light-emittinglayer 17. Procedures whereby, as well as EL display-panel (device) configurations in which, the light-emittinglayer 17R is formed by an inkjet scheme and the light-emittinglayer 17R is reformed by being irradiated with thelaser beam 59 also come under the technical category of the present invention. - Further, while the present invention has had it that, for the sake of facilitating comprehension, the light-emitting
layers 17 are reformed principally by the guest material absorbing light, it is not thereby limited. Procedures whereby, as well as EL display-panels (devices) in which, the light-emittinglayer 17 is formed of a solitary organic film such as Alq3, for example, in which case the solitary organic film is irradiated with light to reform the solitary organic film, also come under the technical category of the present invention. Also, procedures whereby, as well as EL display-panels (devices) in which, the hole-transport layers etc. are reformed by being irradiated with thelaser beam 59 also come under the technical category of the present invention. - The
laser beam 59 is ultraviolet light having a wavelength λ of from at least 300 nm to not more than 420 nm. More preferably, thelaser beam 59 is ultraviolet light having a wavelength λ of from at least 310 nm to not more than 400 nm. - Next, the
TFT substrate 52 is conveyed into thecentral chamber 115 via the load-lock chamber 112, then conveyed into the compartment chamber (EML (G)) 111 b. In thecompartment chamber 111 b, the light-emittinglayer 17G is laminated over the light-emittinglayer 17R, as illustrated inFIG. 10C , by a vapor deposition technique. - In the manufacturing step of depositing the light-emitting
layer 17G, a vapor-depositionfine mask 251R is not employed. A vapor-deposition coarse mask (not depicted) is employed to deposit the light-emittinglayer 17G on thedisplay screen 36 in the display panel. Accordingly, the light-emittinglayer 17G is formed in common above thepixel electrodes 15R, thepixel electrodes 15G, and thepixel electrodes 15B. - The
TFT substrate 52 in thecentral chamber 115 is directionally switched around by the transport robot, then is conveyed into thelaser device chamber 118 via the load-lock chamber 112. - In the
laser device chamber 118, irradiating of the light-emittinglayer 17G on theTFT substrate 52 with thelaser beam 59 b is carried out, as indicated inFIG. 10D . Thelaser beam 59 b is directed onto the light-emittinglayer 17G where it is above thepixel electrodes 15B. Thelaser beam 59 b is not directed onto the light-emittinglayer 17G where it is above thepixel electrodes 15R and thepixel electrodes 15G. Reformed by the lasing portion of thelaser beam 59 b, the light-emittinglayer 17G is made into reformedsections 96 b. - In many cases the excitation energy of the guest material in the light-emitting
layer 17G is greater compared with that of the guest material in the light-emittinglayer 17R. A guest material whose excitation energy is greater can mean that the wavelengths absorbed will be shorter. In those cases, for the laser-beam 59 b wavelength, a laser beam whose wavelength is shorter than that of thelaser beam 59 a is selected. For example, thelaser beam 59 b is ultraviolet light of wavelength λ from at least 300 nm to not more than 380 nm. Thelaser beam 59 a is ultraviolet light of wavelength λ from at least 310 nm to not more than 400 nm. Alternatively, the wavelengths of thelaser beam 59 a and thelaser beam 59 b may be the same, while the per-unit-surface-area intensities of thelaser beam 59 a and thelaser beam 59 b are made to differ. - Absorbing the
laser light 59 b, the light-emittinglayer 17G where it is above thepixels 37B (pixel electrodes 15B) is reformed. The light-emittinglayer 17G where it is above thepixels 37B (pixel electrodes 15B) is made into reformedsections 96 b. Consequently, having been reformed the guest material in the light-emittinglayer 17G may not undergo excitation. The light-emittinglayer 17G behaves as a host material. - The light-emitting
layer 17R above thepixel electrodes 15G is set forth as being reformedsections 96 a, while the light-emittinglayer 17G above thepixel electrodes 15B is set forth as being reformedsections 96 b. The reformedsections 96 a and the reformedsections 96 b differ in their guest and associated materials and frequently differ physically or in terms of physical properties. Nevertheless, it often happens that the physical properties of the reformedsections 96 a and of the reformedsections 96 b are the same or are similar. Accordingly, the reformedsections 96 a and the reformedsections 96 b may be assumed to be the same and be “reformedsections 96.” - The
TFT substrate 52 is conveyed into the compartment chamber (EML (B) ETL) 111 e, as illustrated inFIG. 11A , via thecentral chamber 115. The light-emittinglayer 17B, as illustrated inFIG. 10E , is laminated over the light-emittinglayer 17G. As to the deposition of the light-emittinglayer 17B material, a host material and a blue-light-emitting guest material within a vacuum are co-deposited and laminated onto the light-emittinglayer 17G by vacuum vapor deposition. - In the manufacturing step of vacuum vapor-depositing the light-emitting
layer 17B, a vapor-depositionfine mask 251R is not employed. A vapor-deposition coarse mask (not depicted) is employed to deposit the light-emittinglayer 17B on the entirety of thedisplay screen 36 in the display panel. Accordingly, the light-emittinglayer 17B is formed in common above thepixel electrodes 15R, thepixel electrodes 15G, and thepixel electrodes 15B. - Next, an electron-
transport layer 18 as represented inFIG. 10F is formed over the light-emittinglayer 17B, following which LiF or Liq or the like as an electron injection membrane is built on, and acathode electrode 19 is laminated onto the electron-transport layer 18. For thecathode electrode 19, aluminum, silver, a silver-magnesium (MgAg) alloy, calcium, or the like is utilized. - The
cathode electrode 19 is laminated over the light-emittinglayer 17B by, for example, vacuum vapor deposition. In the vacuum vapor deposition, a vapor-deposition coarse mask is used so that the cathode-electrode material will be deposited in the display area of the EL display panel. Acathode electrode 19 is thereby formed as a continuous film over the entire display area. - Next, after the cathode electrode (cathode) 19 as illustrated in
FIG. 10F has been formed, a sealingmembrane 20 is built on to an extent that will not exert an influence on the groundwork, by a film forming method in which the energy of the film-forming particles is small—e.g., physical vapor deposition or CVD. - For example, in cases where a sealing
membrane 20 made from amorphous silicon nitride is built on, it is formed to a film thickness of 2 to 3 μm by CVD. Therein, in order to prevent degradation in luminance due to deterioration of the organic layer, the film forming temperature is set to within a range of fromCelsius 15° C. to 25° C., near normal temperatures. - Also, the sealing
membrane 20 may be rendered by building on SiON or the like by CVD, and thereafter building on an acrylic or epoxy organic material or the like. Preferably a moisture-proofing measure is taken by pasting a sealingfilm 27 onto the sealingmembrane 20. Next, theTFT substrate 52 and a sealing substrate are glued together with a sealing layer intervening so that the EL display elements are encompassed by theTFT substrate 52, the sealing substrate, and the sealing layer. - Alternatively, the
TFT substrate 52 is sealed by thin-film sealing technology. With thin-film sealing technology, extremely thin inorganic membranes and organic membranes are formed laminated in multiple layers onto theTFT substrate 52. A multilayer structure is imparted in which inorganic membranes (ordinary thickness less than 1 μm) and organic membranes (ordinary thickness 6 μm and above) are overlaid in alternation. The inorganic membranes protect theEL elements 22 chiefly by preventing intrusion of oxygen and moisture. - The
TFT substrate 25 is conveyed out from the film-formingtool 116 via the convey-outchamber 114. It should be noted that in order to have the display contrast be excellent, a circularly polarizing plate (circularly polarizing film) 29 is pasted on or otherwise arranged on the light-exiting side of the EL display panel. - With the embodiment example of
FIG. 10 , it was explained that a laser device for generating alaser beam 59 a and alaser device 58 for generating alaser beam 59 b are set up, but the present invention is not thereby limited. Thelaser beam 59 a and thelaser beam 59 b may be generated by asingle laser device 58 that generates a variable-wavelength beam. And it will be appreciated that a plurality oflaser devices 58 that generate laser light either aslaser beam 59 a orlaser beam 59 b may be set up. The wavelengths of thelaser beam 59 a and thelaser beam 59 b may be made to differ. - In the foregoing embodiment example, it was explained that after the light-emitting
layer 17 is formed, thelaser beam 59 is directed on it to reform the light-emittinglayer 17, but the present invention is not thereby limited. For example, while the light-emittinglayer 17 is being formed by vapor deposition, thelaser beam 59 may be directed on it to reform or remove the light-emittinglayer 17. - In an EL display panel of the present invention,
pixels 37 for a plurality of colors are arranged in matrix form. In the EL display panel, on pixels for at least one color, a light-emitting layer 17 a for a first color is layered, and atop it a light-emitting layer 17 b for a second color is layered. The emission wavelength from the first-color light-emitting layer 17 a is longer than the emission wavelength from the second-color light-emitting layer 17 b. The guest material in the first-color light-emitting layer 17 a absorbs the energy whereby the second-color light-emitting layer 17 b undergoes excitation, and emits light. - In an EL display panel of the present invention, the light-emitting layer 17 a for the first color is layered on pixels for at least one color, and atop it the light-emitting layer 17 b for the second color is layered. The
laser beam 59 or other beam having narrow directivity is directed onto the light-emitting layer 17 a of the first color to reform the first-color light-emitting layer 17 a and render it a non-emitting layer. The light-emitting layer 17 b of the second color is light-emitting. - In a case where, for example, a bilaminar light-emitting lamina being the red light-emitting
layer 17R and the green light-emittinglayer 17G has been laminated over thepixel electrodes 15, by reforming the red light-emittinglayer 17R, the red light-emittinglayer 17R does not emit light; the green light-emittinglayer 17G alone emits light, and thepixels 37 having theaforesaid pixel electrodes 15 emit green light. - The present invention is not limited by EL display panels in which
pixels 37 for a plurality of colors are arranged in matrix form. In display panels of the present invention, a section that emits light in a plurality of locations is formed in a display unit or else adisplay screen 36, wherein a plurality of light-emittinglayers 17 is laminated on the light-emitting section. The light-emitting section is characterized in that, without a vapor-depositionfine mask 251 etc. being employed, alaser beam 59 or other beam of narrow directivity is directed onto the light-emittinglayers 17 of longer wavelength among the plurality of light-emittinglayers 17, whereby the longer wavelength light-emittinglayers 17 are reformed. - With manufacturing methods and manufacturing apparatuses of the present invention, during the formation of at least any of the light-emitting
layers 17 in order to build the light-emittinglayer 17R, the light-emittinglayer 17G, and the light-emittinglayer 17B, no vapor-depositionfine mask 251 is employed. In the present invention, in order to form a light-emittinglayer 17R, light-emittinglayer 17G, or light-emittinglayer 17B that emits light, at least any one of the light-emittinglayers 17 is irradiated with thelaser beam 59 or other ultraviolet beam of narrow directivity. - For control of the lasing position of the
laser beam 59, positioning with a high level of precisions can be carried out by means of themirror galvanometer 62 or a sliding stage (linear stage or the like). Further, the positioning can be easily set to correspond to the position of apixel 37 on theTFT substrate 52. Accordingly, EL display panels in which the form of thepixels 37, the arrangement of thepixels 37, or the number of thepixels 37 differ can be readily manufactured by changing the product variety. What is more, the equipment cost of the manufacturing apparatus is extraordinarily inexpensive. - In conventional manufacturing schemes employing vapor-deposition
fine masks 251, in cases where thepixels 37 are high-definition, the fact that the deposition openings (mask apertures) in the vapor-depositionfine mask 251 are smaller means that fabricating the vapor deposition openings in the vapor-depositionfine mask 251 is arduous. A further issue has been that positioning the vapor-depositionfine mask 251 to accord with the positions of thepixels 37 in the EL display panel is challenging. Still further, vapor-depositionfine masks 251 employed in the manufacture of large EL display panels for televisions are large in surface area and heavy in weight. A consequent issue has been that the transport robot that positions the vapor-depositionfine masks 251 is also large-scale. - In manufacturing schemes and manufacturing apparatuses of the present invention, the emission colors of the light-emitting
layers 17 is determined by irradiating thepixels 37 with thelaser beam 59. With ultraviolet-wavelength laser beams 59, spot sizes of 10 μm or less diameter are realizable. Further,such laser beams 59 may be positioned at high speed by mirror-galvanometer 62 control. And even with the EL display-panel dimensions being wide-area, by mirror-galvanometer 62 control or by shifting of the slidingstage 51 etc., thelaser beam 59 may be positioned at high speed into any site on the EL display panel, from its periphery to its midportion. What is more, since only control of thelaser beam 59, not positioning of the vapor-depositionfine mask 251, is required, manufacturing facilities are inexpensive and manufacturing Takt time can be shortened. - Through the foregoing features, with the manufacturing schemes of the present invention, EL display panels can be manufactured at low cost even with the
pixels 37 being high-definition and the EL display-panel dimensions being wide-area. What is more, outstanding display grade and high manufacturing yield may be realized. - The embodiment illustrated with
FIGS. 1 and 10 was an example in which the light-emittinglayers 17 are irradiated with alaser beam 59 to reform the light-emittinglayers 17. Nevertheless, the present invention is not thereby limited. - A light-emitting
layer 17 continuing over neighboringpixels 37 may be formed, and by irradiating the light-emittinglayer 17 in thosepixels 37 with thelaser beam 59, light-emittinglayer 17 there may be removed. - For example, in
FIG. 10B , on theTFT substrate 52 the light-emittinglayer 17R is laminated onto the hole-transport layer 16. The light-emittinglayer 17R is formed as a light-emittinglayer 17R continuing over thered pixels 37R, thegreen pixels 37G, and theblue pixels 37B. Next, thelaser beam 59 a is directed onto the light-emittinglayer 17R above thegreen pixel electrodes 15G and theblue pixel electrodes 15B. The irradiating by thelaser beam 59 a superheats the light-emittinglayer 17R, vaporizing it. By being vaporized, the light-emittinglayer 17R is removed. - Further, as indicated in
FIG. 10D , the light-emittinglayer 17G above theblue pixel electrodes 15B is irradiated with thelaser beam 59 b. By being irradiated with thelaser beam 59 b, the light-emittinglayer 17G absorbs thelaser light 59 b and is thereby superheated and vaporized. By being vaporized, the light-emittinglayer 17G is removed from atop the hole-transport layer 16. - By means of the foregoing manufacturing steps, three light-emitting layers, the light-emitting
layer 17R, the light-emittinglayer 17G, and the light-emittinglayer 17G, are laminated over thered pixel electrodes 15R. Two light-emitting layers, the light-emittinglayer 17G and the light-emittinglayer 17G, are laminated over thegreen pixel electrodes 15G. The light-emittinglayer 17G is laminated over theblue pixel electrodes 15B. - It should be noted that in the manufacturing step of
FIG. 10B , although the light-emittinglayer 17R is removed by being vaporized, in some cases a portion of the light-emittinglayer 17R may be left remaining. Because light-emittinglayer 17R remaining is reformed by thelaser beam 59 a, however, it does not contribute to optical emission. In the manufacturing step ofFIG. 10D , although the light-emittinglayer 17G is removed by being vaporized, in some cases a portion of the light-emittinglayer 17G may be left remaining. Because light-emittinglayer 17G remaining is reformed by thelaser beam 59 b, however, it does not contribute to optical emission. - In the
pixels 37R, at least a portion of the excitation energy that the light-emittinglayer 17B releases is converted into light having the emission spectrum of the guest material that the light-emittinglayer 17R contains. At least a portion of the energy whereby by the light-emittinglayer 17G is excited is converted into light having the emission spectrum of the guest material that the light-emittinglayer 17R contains. Accordingly, with the emission color of thepixels 37R being about equal to the emission color of the light-emittinglayer 17R, thepixels 37R give off red light. - In the
pixels 37G, recombination of electrons and holes occurs mainly in the light-emittinglayer 17G, but there is a possibility that the recombining emits light in the light-emittinglayer 17B. At least a portion of the excitation energy that the light-emittinglayer 17B releases is converted into light having the emission spectrum of the guest material that the light-emittinglayer 17G contains. Accordingly, with the emission color of thepixel electrodes 15G being about equal to the emission color of the light-emittinglayer 17G, thepixel electrodes 15G give off green light. - In the
pixels 37B, recombination of electrons and holes occurs mainly in the light-emittinglayer 17B. Because the light-emittinglayers 17 for the other colors have been removed, thepixels 37B give off blue light. - Accordingly, by the ablating of the light-emitting
layers 17 with thelaser beams 59, EL display panels having the three primary colors red, green and blue may be manufactured. - In the foregoing embodiment example, a description has been made with the
laser device 58 being utilized to reform the light-emittinglayers 17. Nevertheless, the present invention is not thereby limited. For example, an LED (light-emitting diode) that generates ultraviolet light may be used as the reforming beam. Because their light-emitting elements are tiny, LEDs can generate narrow-directivity beams. -
FIG. 12 is a diagram for explaining an opticalgenerator using LEDs 122.FIG. 13 , meanwhile, is a diagram for explaining a method of reforming a light-emittinglayer 17 utilizing the optical generator ofFIG. 12 . - For the
substrate 123 of the optical generator, a metal plate or a ceramic plate is employed as a base element in order to dissipate the heat that theLEDs 122 generate. A heat-dissipating plate (not depicted) is attached to the back side of the substrate. -
LEDs 122 that generate ultraviolet light are attached to thesubstrate 123. The dimensions (vertical length c, horizontal length b) of the light-emitting sections of theLEDs 122 are approximately matched to the dimensions of thepixel 37 areas that undergo reforming. Alternatively, the dimensions (vertical length c, horizontal length b) of the light-emitting sections are made smaller than the dimensions of thepixel 37 areas that undergo reforming. - Further, the generator may be a configuration in which lenses (not depicted) or the like are arranged in front of the light emitting sections of the
LEDs 122 so that the approximate entirety of thepixels 37 may be irradiated with the ultraviolet light that theLEDs 122 generate. TheLEDs 122 emitting light allows the light-emittinglayers 17 formed above thepixel electrodes 15 inpixels 37 of a predetermined color to be reformed. - The
LED 122 surface-mounting position e along the vertical orientation is matched to the pitch of thepixels 37. TheLED 122 surface-mounting position d along the horizontal orientation is approximately matched to the column pitch of thepixels 37. An alternative is to have the LED 122 vertical surface-mounting position e and theLED 122 horizontal surface-mounting position d be n times the pixel pitch (n: apositive number 1 or greater). - The length f along which the LEDs are mounted is the length from the first row to the last pixel row on the EL display panel. Accordingly, the number of LEDs mounted down the length f matches the number of pixel rows on the EL display panel. An alternative is to make the length f be 1/n (n: a
positive number 1 or greater) of the length from the first row to the last pixel row on the EL display panel. - In
FIG. 12 , for ease of illustration, the surface-mounting columns for theLEDs 122 are rendered as two lines, but the present invention is not thereby limited. For example, theLED 122 surface-mounting columns may be made three or more lines. The number ofLED 122 surface-mounting columns or surface-mounting rows may be the number of pixel columns or pixel rows on the display panel. Such implementations eliminate the necessity of, as indicated inFIG. 13 , shifting the optical generator in the direction a. The optical generator should be positioned on the EL display panel and theLEDs 122 caused to emit light. - The wavelengths of the light generated by
LEDs 122 a andLEDs 122 b as illustrated inFIG. 12 may be made to differ. For example, the optical generator may be configured to cause theLEDs 122 a to generate light whose principal wavelength is that of thelaser beam 59 a, and to cause theLED 122 b to generate light whose principal wavelength is that of thelaser light 59 b, explanatorily illustrated byFIG. 10 . -
FIG. 12B is a section view along the line a-a′ inFIG. 12A . A light-absorbingelement 121 for absorbing ultraviolet light that theLEDs 122 have generated is formed surrounding theLEDs 122. TheLEDs 122 a generateultraviolet light 141 a, and theLEDs 122 b generateultraviolet light 141 b. As thelight absorbing element 121 an example in which carbon has been added to an acrylic or epoxy resin is illustrative. - As illustrated in
FIGS. 13A and 13B , the optical generator is arranged so as to coincide with the position of thepixel electrodes 15 on theTFT substrate 52. And by shifting the optical generator by a pixel-column or pixel-row pitch, and in the position into which theLEDs 122 have been shifted, causing them to emit light, the light-emittinglayers 17 in thepixels 37 are reformed. - In instances where a pair of pixel columns or a pair of pixel rows are reformed simultaneously, both the
LEDs 122 a and theLEDs 122 b emit light. In instances where a single pixel column or a single pixel row is reformed, either theLEDs 122 a or theLEDs 122 b emit light. - As given in the foregoing, with the present invention, the light-generating means for generating
ultraviolet light 59 is not limited to thelaser device 58. As long as it is a light-generating means whereby beams of light in and near the ultraviolet range may be radiated in correspondence with thepixel 37 positions without a vapor-depositionfine mask 251 intervening, it may be any means. And it will be appreciated that by having the light-generating means be a means for generating infrared light, it may find application as a light-generatingsource 58 for the thermal transfer device ofFIG. 18 and related figures. - It will be appreciated that by having the optical-
generator LEDs 122 be infrared light-emitting LEDs, they may be employed as the light-generatingsource 58 for the thermal transfer device illustrated inFIG. 18 ,FIG. 19 andFIG. 20 . Likewise as withFIG. 13 , adonor film 197 should be arranged between theTFT substrate 52 and the optical generator, wherein a transferorganic film 195 in thedonor film 197 is superheated by the light that the infrared-emitting LEDs of the optical-generator generates, forming the light-emittinglayer 17. - By having the
LEDs 122 a in the optical generator illustrated inFIG. 12A be infrared light-emitting LEDs and having theLEDs 122 b be ultraviolet light-emitting LEDs, the optical generator may be configured as a dual-use device both for reforming and for thermal transferring the constituent material of the light-emittinglayers 17. What is more, the device can be used as an optical generator, explanatorily illustrated byFIG. 20 , for removingdeposits 201. - The light that the
LEDs 122 generate has a fixed band of wavelengths rather than a single wavelength as with laser light. Accordingly, the generating of ultraviolet light whose dominant wavelength is from 310 nm to 400 nm is adopted for the light that theLEDs 122 produce. - While referring to the drawings, a description of a second embodiment example of the present invention will be made in the following.
FIGS. 14 and 15 are a sectional configuration diagram of, and a diagram for explaining a method of manufacturing, an EL display panel in the second embodiment of the present invention. - In
FIG. 14 , a light-emitting layer (EML (R)) 17R and a light-emitting layer (EML (GB)) 17GB are formed above thered pixel electrodes 15R. A light-emitting layer (EML (R)) 17R and a light-emitting layer (EML (GB)) 17GB are formed above thegreen pixel electrodes 15G and theblue pixel electrodes 15B. - The light-emitting layer (EML (GB)) 17GB contains a blue guest material and a green guest material. The wavelengths of the light that the blue guest material and the green guest material absorb differ.
- Above the
green pixel electrodes 15G, the light-emitting layer (EML (R)) 17R is reformed by being irradiated withlaser beam 59 a. Likewise, the blue guest material in the light-emitting layer (EML (GB)) 17GB is reformed by the light-emitting layer (EML (GB)) 17GB being irradiated withlaser beam 59 b. - Above the
blue pixel electrodes 15B, the light-emitting layer (EML (R)) 17R is reformed by being irradiated with thelaser beam 59 a. Likewise, the green guest material in the light-emitting layer (EML (GB)) 17GB is reformed by the light-emitting layer (EML (GB)) 17GB being irradiated withlaser beam 59 c. - While referring to the drawings, a description of a manufacturing method in the second embodiment example of the present invention will be made in the following. The
TFT substrate 52 is conveyed in from the convey-inchamber 113 inFIG. 11A and conveyed into the chamber (HTL) 111 c. As illustrated inFIG. 15A , the hole-transport layer 16 is formed over thepixel electrodes 15 on theTFT substrate 52. - Next, the
TFT substrate 52 is conveyed into the emission-layer (EML) R deposition compartment chamber (EML (R)) 111 d. By means of a vapor-deposition technique, as illustrated inFIG. 10B the light-emittinglayer 17R is laminated onto the hole-transport layer 16. The light-emittinglayer 17R is formed by codeposition of a host material and a red guest material. The light-emittinglayer 17R is formed as a continuous film across thedisplay screen 36 entirety. - Next, the
TFT substrate 52 is conveyed into thelaser device chamber 118. In thelaser device chamber 118, irradiating of theTFT substrate 52 light-emittinglayer 17R is carried out withlaser beam 59 a, as indicated inFIG. 15B . Thelaser beam 59 a is directed onto the light-emittinglayer 17R above thepixel electrodes 15G and thepixel electrodes 15B. Thelaser beam 59 a is not directed onto the light-emittinglayer 17R above thepixel electrodes 15R. Reformed with the lasing portion of thelaser beam 59 a, the light-emittinglayer 17R is made into reformedsections 96 a. Because the light-emittinglayer 17R where it is above thepixel electrodes 15R is not irradiated with thelaser beam 59 a, as a light-emitting guest material its capacity is maintained. - Next, the
TFT substrate 52 is conveyed into thecentral chamber 115 via the load-lock chamber 112, then conveyed into the compartment chamber (EML (G)) 111 b. In thecompartment chamber 111 b, the light-emitting layer (EML (GB)) 17GB is laminated over the light-emittinglayer 17R, as illustrated inFIG. 15C . - The light-emitting layer (EML (GB)) 17GB contains a blue guest material and a green guest material. The wavelengths of the
laser beams 59 that the blue guest material and the green guest material absorb differ. Changing the wavelength of thelaser beam 59 directed onto the light-emitting layer (EML (GB)) 17GB, enables selecting between the blue guest material and the green guest material to reform. - As indicated by the
FIG. 3C graph, for the host material, a material that does not readily absorb thelaser beam 59 a, thelaser beam 59 b, and thelaser beam 59 c is selected. Alternatively, a material that transmits thelaser beam 59 is selected. - The concept that the material “does not readily absorb” laser light and similar optical radiation includes, apart from the material not absorbing light, reflecting said laser light and similar optical radiation, as well as transmitting said laser light and similar optical radiation. Further, the concept also includes that the material or its constituents does not change despite absorbing laser light and similar optical radiation.
- For the guest material R, a material that readily absorbs the
laser light 59 a is selected. For the guest material B, a material that readily absorbs thelaser light 59 b but does not readily absorb thelaser light 59 c is selected. For the guest material G, a material that readily absorbs thelaser light 59 c but does not readily absorb thelaser light 59 b is selected. - Preferably, given that the guest-material B absorptivity, as graphed in
FIG. 3C , is 100% at the wavelength of thelaser beam 59 b, a guest-material G stuff whose guest-material G absorptivity will be not greater than 25% is selected. Likewise, given that the guest-material G absorptivity is 100% at the wavelength of thelaser beam 59 c, a guest material B whose guest-material B absorptivity will be not greater than 25% is selected. Further, given that the guest-material B absorptivity is 100% at the wavelength of thelaser beam 59 b, a host material whose host-material absorptivity will be not greater than 25% is selected. - Absorptivity being 100% may be read as transmittance being 0%; absorptivity being 0%, as transmittance being 100%; absorptivity being 75%, as transmittance being 25%; absorptivity being 25%, as transmittance being 75%.
- The light-emitting layer (EML (GB)) 17GB is formed above the
green pixel electrodes 15G, as illustrated inFIG. 15D . The light-emitting layer (EML (GB)) 17GB contains a guest material B that contributes to blue light emission and a guest material G that contributes to green light emission. As indicated inFIG. 3C , thelaser beam 59 b wavelength is a shorter wavelength than thelaser beam 59 c wavelength. Guest material B absorbs light of shorter wavelengths better than the guest material G. - With the light-emitting layer (EML (GB)) 17GB above the
green pixel electrodes 15G being irradiated withlaser beam 59 b, the guest material B in the light-emitting layer (EML (GB)) 17GB, absorbing thelaser light 59 b, is reformed. The guest material Gin the light-emitting layer (EML (GB)) 17GB does not absorb thelaser light 59 b. Because the light-emitting layer (EML (GB)) 17GB is maintained in a state in which the guest material G is capable of emitting light, the light-emitting layer (EML (GB)) 17GB acts as a green-emitting light-emittinglayer 17G. - The light-emitting layer (EML (GB)) 17GB is formed above the
blue pixel electrode 15B, as illustrated inFIG. 15E . With the light-emitting layer (EML (GB)) 17GB being irradiated withlaser beam 59 c, the guest material Gin the light-emitting layer (EML (GB)) 17GB, absorbing thelaser light 59 c, is reformed. The guest material B does not absorb thelaser light 59 b. Since the light-emitting layer (EML (GB)) 17GB is maintained in a state in which the guest material B is capable of emitting light, the light-emitting layer (EML (GB)) 17GB acts as a blue-emitting light-emittinglayer 17B. - Next, an electron-
transport layer 18 as represented inFIG. 15F is formed over the light-emittinglayers 17G and B, following which LiF or Liq or the like as an electron injection membrane is built on, and acathode electrode 19 is laminated onto the electron-transport layer 18. Thecathode electrode 19 is formed onto the electron-transport layer 18. - The bulk of the guest material that the light-emitting
layer 17R above thepixel electrodes 15R includes is capable of emitting light. The red guest material included in the light-emittinglayer 17R above thepixel electrodes 15G and thepixel electrodes 15B for the most part is quenched or does not undergo excitation. By being irradiated with thelaser beam 59 b, the blue guest material B included in the light-emitting layer 17GB above thepixel electrodes 15G for the most part is quenched or does not undergo excitation. By being irradiated with thelaser beam 59 c, the green guest material G included in the light-emitting layer 17GB above thepixel electrodes 15B for the most part is quenched or does not undergo excitation. - In the light-emitting layer 17GB above the
pixel electrodes 15R, it is possible for the green guest material G and the blue guest material B also to undergo excitation. The green guest material Gin the light-emitting layer 17GB absorbs the energy whereby by the blue guest material B undergoes excitation. Absorbing energy whereby by the green guest material G is excited, the red guest material R included in the light-emittinglayer 17R above thepixel electrodes 15R emits light. - In the light-emitting
layer 17R above thepixel electrodes 15G, because the contained red guest material R has been irradiated with thelaser beam 59 a, it does not undergo excitation. Likewise, because the blue guest material B in the light-emitting layer 17GB has been irradiated with thelaser beam 59 b, it does not undergo excitation. Therefore, the light-emitting layer 17GB optically emits in green. Accordingly, the pixel-electrode 15G pixels - It should be understood that with the light-emitting layer 17GB above the
pixel electrodes 15G, the green guest material G in the light-emitting layer 17GB is a material that optimally absorbs the energy whereby the blue guest material B undergoes excitation, and otherwise that with the configuration of theEL element 22, the green guest material G included in the upper light-emitting layer 17GB above thepixel electrodes 15G absorbs the energy whereby the blue guest material B undergoes excitation and emits light. Accordingly, the light-emitting layer 17GB optically emits in green. In this case, the manufacturing step of irradiating the light-emitting layer 17GB above thepixel electrodes 15G with thelaser light 59 b inFIG. 15D can be eliminated. - In the light-emitting
layer 17R above thepixel electrodes 15B, because the contained red guest material R has been irradiated with thelaser beam 59 a, it does not undergo excitation. Likewise, because the green guest material Gin the light-emitting layer 17GB has been irradiated with thelaser beam 59 c, it does not undergo excitation. Therefore, the light-emitting layer 17GB optically emits in blue. Accordingly, the pixel-electrode 15B pixels - While referring to the drawings, a description of a third embodiment of the present invention will be made in the following.
FIGS. 16 and 17 are a sectional structure diagram of, and diagrams for explaining the manufacture of, an EL display panel in the third embodiment of the present invention. - In
FIG. 16 , a light-emittinglayer 17R, a light-emittinglayer 17G, and a light-emittinglayer 17B are formed above thered pixel electrodes 15R. A light-emittinglayer 17G and a light-emittinglayer 17B are formed above thegreen pixel electrodes 15G and theblue pixel electrodes 15B. - The light-emitting
layer 17G above theblue pixel electrodes 15B has been irradiated with light to reform the green guest material in the light-emittinglayer 17G. - While referring to the drawings, a description of a manufacturing method in the third embodiment example of the present invention will be made in the following. As illustrated in
FIG. 17A , as for theTFT substrate 52, the hole-transport layer 16 is formed over thepixel electrodes 15. Next, theTFT substrate 52 is conveyed into the emission-layer (EML) R deposition compartment chamber (EML (R)) 111 d. - As illustrated in
FIG. 17B , a vapor-depositionfine mask 251R is arranged on theTFT substrate 52 in order to form the red light-emittinglayer 17R. The vapor-depositionfine mask 251R is a mask having apertures in the red-pixel positions. - Red light-emitting
layer material 172R is vaporized to laminate a light-emittinglayer 17R onto the hole-transport layer 16. The light-emittinglayer 17R is formed by codeposition of a host material and a red guest material. The codeposition is implemented in a vacuum process step. - Next, the
TFT substrate 52 is conveyed into thecompartment chamber 111 b. In thecompartment chamber 111 b, as shown inFIG. 17C , the light-emittinglayer 17G is laminated. The light-emittinglayer 17G contains a green guest material. - Next, the
TFT substrate 52 is conveyed into thelaser device chamber 118 shown inFIG. 11A . As illustrated inFIG. 17D , the light-emittinglayer 17G above theblue pixel electrode 15B is irradiated with thelaser light 59. When thelaser beam 59 is irradiated, the guest material G of the light-emittinglayer 17G absorbs thelaser beam 59 and is reformed. - Since the light-emitting
layer 17G above thegreen pixel electrode 15G is not irradiated with thelaser light 59, the guest material G of the light-emittinglayer 17G is in a state capable of emitting light. - Next, as illustrated in
FIG. 17E , a light-emittinglayer 17B is formed. Since the light-emittinglayer 17B is maintained in a state in which the guest material B can emit light, the light-emittinglayer 17B becomes a light-emitting layer that emits blue light. - Next, as illustrated in
FIG. 17F , the electron-transport layer 18 is formed above the light-emitting layer 17GB, then the electron-injection layer is formed, and thecathode electrode 19 is laminated onto the electron-transport layer 18. - In the embodiment of
FIG. 17 , it has been described that the light-emittinglayer 17 is formed using the vapor-depositionfine mask 251, but the present invention is not limited to this. For example, it goes without saying that other layers such as the hole-transport layer 16 may be formed using the vapor-depositionfine mask 251. For example, the step of forming the hole-transport layer (HTL) of theblue pixel 37B ofFIG. 28A , the step of forming the hole-transport layer (HTL) of thered pixel 37R ofFIG. 28B , and the step of forming the hole-transport layer (HTL) of theblue pixel 37B ofFIG. 28 D, and the step of forming the insulatingfilm 14B are exemplifying. - In the light-emitting
layer 17R above thepixel electrode 15R inFIG. 16 , recombination of electrons and holes mainly occurs in the red guest material R of the light-emittinglayer 17R. It may also occur in the blue guest material B of thelayer 17B. - The green guest material G of the light-emitting
layer 17G absorbs energy that excites the blue guest material B of the light-emittinglayer 17B. The red guest material R included in the light-emittinglayer 17R above thepixel electrode 15R absorbs energy that excites the green guest material G and emits light. The light-emittinglayer 17 of thepixel electrode 15R of the EL display panel of the present invention shown inFIG. 16 emits red light. - The green guest material G of the light-emitting
layer 17G above thepixel electrode 15G absorbs energy that excites the blue guest material B of the light-emittinglayer 17B. The light-emittinglayer 17 of thepixel electrode 15G of the EL display panel of the present invention shown inFIG. 16 emits green light. - In the light-emitting
layer 17G above thepixel electrode 15B, the contained green guest material G is not excited by being irradiated with thelaser beam 59. The light-emittinglayer 17B emits blue light. Therefore, thepixel 37 of thepixel electrode 15B emits blue light. - In the manufacturing method of the present invention shown in
FIG. 17 , the formation of the light-emittinglayer 17R with the vapor-depositionfine mask 251 is described as an example. However, the present invention is not limited to this. For example, the light-emittinglayer 17R may be formed by a laser thermal transfer method, an ink jet method, or a printing method. - It is also a technical category of the present invention to form other light-emitting layers such as the light-emitting
layer 17G and the light-emittinglayer 17B with a vapor-deposition fine mask. Moreover, it is not limited to the light-emittinglayer 17. For example, the positive hole-transport layer 16 may be formed. By forming the hole-transport layer 16 using the vapor-depositionfine mask 251, for example, as shown inFIG. 1 , the film thicknesses of the hole-transport layer 16R, the hole-transport layer 16G, and the hole-transport layer 16B may be easily varied and formed. - A fourth embodiment of the present invention will be described below with reference to the drawings. First, a laser thermal transfer apparatus which is one of the EL display panel manufacturing apparatuses of the present invention will be described.
-
FIG. 18 is an explanatory diagram of a laser thermal transfer apparatus which is one of the EL display panel manufacturing apparatuses of the present invention. Items related to thelaser device 58 of the laser thermal transfer device, the control device, the control method, the operation, and the like have been described with reference toFIGS. 4, 5, 6 etc. - The
laser light 59 generated by thelaser device 58 is light in the ultraviolet region when reforming the light-emittinglayer 17 and the like, whereas it is different from light in the infrared region in the case of laser thermal transfer. -
FIG. 11B is an explanatory diagram of an EL display panel manufacturing apparatus according to the fourth embodiment of the present invention. The laser thermal transfer device is disposed in thetransfer device chamber 117 ofFIG. 11B . TheTFT substrate 52 is conveyed into thetransfer device chamber 117 via theload lock chamber 112 a. Here,FIGS. 11A and 11B are that thecompartment chamber 111 d is aload lock chamber 112 a and atransfer device 117. - As shown in
FIG. 18 , the transfer device for the transferorganic film 195 includes alaser device 58 that generateslaser light 59 d for irradiating thedonor film 197.FIG. 19 is an explanatory diagram for explaining the operation of irradiating thedonor film 197 with thelaser beam 59 d by thelaser device 58 in the transfer process. - The laser thermal transfer apparatus includes a sliding
stage 182 on which theTFT substrate 52 is placed and acontrol mechanism 185. Thesupport mechanism 183 of thecontrol mechanism 185 holds thedonor film 197 disposed on theTFT substrate 52. Thesupport mechanism 183 includes a raise/lower mechanism 184 so that the distance between theTFT substrate 52 and thedonor film 197 can be adjusted. Further, the slidingstage 182 has anexhaust port 181 for exhausting the gas existing between theTFT substrate 52 and thedonor film 197 to the outside. - The
control mechanism 185 a includes asupport mechanism 183 a that supports one end of thedonor film 197 and a raise/lower mechanism 184 a. Thecontrol mechanism 185 b includes asupport mechanism 183 b that supports the other end of thedonor film 197 and a raise/lower mechanism 184 b. Thesupport mechanism 183 a and thesupport mechanism 183 b can move thedonor film 197 up and down on the slidingstage 182 independently. - The raise/
lower mechanism 184 a moves up and down on the slidingstage 182. Thesupport mechanism 183 b fixes the other end of thedonor film 197. The raise/lower mechanism 184 b moves thedonor film 197 up and down on the slidingstage 182. - The
support mechanism 183 supports thedonor film 197 so that thedonor film 197 is disposed on theTFT substrate 52. Thesupport mechanism 183 and the raise/lower mechanism 184 can support both ends of thedonor film 197 and move thedonor film 197 up and down with respect to theTFT substrate 52. - The sliding
stage 182 includes twoexhaust ports exhaust port 181 is a passage that connects the inside and the outside of thetransfer device chamber 117. The gas existing between theTFT substrate 52 placed on the slidingstage 182 and thedonor film 197 disposed on theTFT substrate 52 through theexhaust port 181 is exhausted to the outside of thetransfer device chamber 117. - The sliding
stage 182 further includes driving means (not shown) for moving. For example, when thelaser beam 59 is irradiated in the normal direction of theTFT substrate 52, a driving unit (mechanism) for moving the slidingstage 182 in the lateral direction is provided. - The
support mechanism 183 can be raised or lowered in the normal direction of theTFT substrate 52 by the raise/lower mechanism 184. Thecontrol mechanism 185 a and thecontrol mechanism 185 b can be independently controlled in operation, and can be controlled to rise and fall independently. - The
pressure roller 186 is disposed on thedonor film 197 and can apply pressure on thedonor film 197 toward theTFT substrate 52. Thepressure roller 186 applies pressure to thedonor film 197 toward theTFT substrate 52 during the bonding process between thedonor film 197 and theTFT substrate 52 to bring thedonor film 197 and theTFT substrate 52 into close contact with each other. Thepressure roller 186 can prevent the transferorganic film 195 transferred to theTFT substrate 52 from being peeled off during the peeling process between thedonor film 197 and theTFT substrate 52. - The
support mechanism 183 moves thedonor film 197 so as to be separated from theTFT substrate 52 before the bonding step between theTFT substrate 52 and thedonor film 197. Theexhaust port 181 exhausts gas existing in the space between theTFT substrate 52 and thedonor film 197 to the outside. - The
support mechanism 183 pulls in a direction extending from one end and the other end of thedonor film 197 to the outside. By pulling thedonor film 197 taut, thesupport mechanism 183 prevents thedonor film 197 from sagging toward theTFT substrate 52. - As shown in
FIG. 18 , at the time of the peeling process, first, thesupport mechanism 183 a lifts one end of thedonor film 197, so that thepressure roller 186 is opposed to one end from one end of thedonor film 197. Move along. By applying pressure to thedonor film 197 by thepressure roller 186, it is possible to prevent the transferorganic film 195 transferred to theTFT substrate 52 from being peeled off during the peeling process. - During the peeling process of the
donor film 197 and theTFT substrate 52, thesupport mechanism 183 a is raised while thesupport mechanism 183 b is stopped. In thedonor film 197, theTFT substrate 52 is separated from one end of thedonor film 197 from the side close to thesupport mechanism 183 a. - When the raising of the
support mechanism 183 a is completed, thesupport mechanism 183 b starts to rise. As for thedonor film 197, thedonor film 197 closer to thesupport mechanism 183 b is raised, and thedonor film 197 and theTFT substrate 52 are separated. - The EL display panel manufacturing method according to the fourth embodiment of the present invention uses a laser thermal transfer method. In the laser thermal transfer method, the step of disposing the
TFT substrate 52 on the slidingstage 182, the step of removing the gas existing between theTFT substrate 52 and thedonor film 197, and the step of the bonding of thedonor film 197 and theTFT substrate 52 are performed. A step of transferring the transferorganic film 195 of thedonor film 197 to theTFT substrate 52, and a step of peeling thedonor film 197 and theTFT substrate 52 are performed. -
FIG. 19 is an explanatory diagram for explaining a configuration of adonor film 197 used in the fourth embodiment of the present invention and a manufacturing method using thedonor film 197. - The
base film 191 of thedonor film 197 is made of a transparent polymer material. As thebase film 191, it is particularly preferable to use a polyethylene terephthalate film. The thickness of thebase film 191 is preferably from 10 μm to 500 μm. - Although the
base film 191 constituting thedonor film 197 is described as a film made of a resin material, the present invention is not limited to this. It will be appreciated that thebase film 191 may be formed of an inorganic material plate such as glass. Therefore, the donor film is not limited to a film, and may be any component as long as it is a sheet-like material on which thephotoconversion film 192 and the transferorganic film 195 are formed. - A
photoconversion film 192 is formed on thebase film 191. Thephotoconversion film 192 is a layer that absorbs thelaser light 59 d in the infrared-visible light region and converts part of the light into heat. Examples of thephotoconversion film 192 include a metal film containing aluminum oxide and aluminum sulfide as a light-absorbing substance, carbon black, and graphite. - An
intermediate film 193 can be formed on thephotoconversion film 192. Theintermediate film 193 serves to prevent the light-absorbing substance contained in thephotoconversion film 192, such as carbon black, from contaminating the transferorganic film 195 formed in the subsequent process. Theintermediate film 193 can be formed of an acrylic resin or an alkyd resin. In the case where theintermediate film 193 is formed on thephotoconversion film 192, it is preferable to further form abuffer film 194 on theintermediate film 193. - The
buffer film 194 is formed to prevent damage to the organic film or the like formed on the transferorganic film 195 and to effectively adjust the adhesive force between theintermediate film 193 and the transferorganic film 195. Thebuffer film 194 is made of metal or metal oxide having a laser beam transmittance of 20% or less, and the thickness of thebuffer film 194 is 0.05 μm or more and 1 μm or less. - A transfer
organic film 195 is formed on thebuffer film 194. The transferorganic film 195 is an organic material for forming the light-emittinglayer 17, the hole injection layer, the hole-transport layer 16, the electron-injection layer, the electron-transport layer 18, and the like. - In one embodiment, the transfer
organic film 195 is manufactured by coating an organic thin film forming substance. As the transferorganic film 195, two or more organic layers can be laminated as needed instead of one organic layer. - As shown in
FIG. 19 , after adonor film 197 is disposed at a position spaced apart from theTFT substrate 52 by a predetermined distance, thedonor film 197 is irradiated withlaser light 59 d having an infrared wavelength or a visible wavelength. - In the embodiment of the present invention, description will be made by exemplifying the formation of the light-emitting
layer 17R of thepixel 37R by thermal transfer, but the present invention is not limited to this. It will be appreciated that the light-emittinglayers 17 of thepixels 37 of other colors may be formed. The formation by thermal transfer is not limited to the light-emittinglayer 17, and it goes without saying that another organic film such as the hole-transport layer 16 may be formed. - As shown in
FIG. 19 , adonor film 197 is disposed on theTFT substrate 52. As shown inFIG. 18 , the alignment between theTFT substrate 52 and thedonor film 197 is performed by acontrol mechanism 185 or the like. - The
laser beam 59 d passes through thebase film 191 and heats thephotoconversion film 192. Thephotoconversion film 192 emits heat by thelaser beam 59 d. Thephotoconversion film 192 expands, and the transferorganic film 195 peels from thedonor film 197. The peeled transferorganic film 195 a is laminated as the light-emittinglayer 17R above thepixel electrode 15 of theTFT substrate 52. - The thickness of the laminated light-emitting
layer 17 is proportional to the thickness of the transferorganic film 195. Therefore, by defining the thickness of the transferorganic film 195, the thickness of the light-emittinglayer 17 can be defined. - Alternatively, a plurality of
donor films 197 may be used and the transferorganic film 195 may be transferred onto the hole transport layer 16 a plurality of times. The film thickness of the light-emittinglayer 17 can be accurately formed to a prescribed film thickness by transferring a plurality of times. - As the
laser beam 59 d, all general-purpose laser beams such as solid, gas, semiconductor, and dye can be used. Among these, it is preferable to use laser light having a wavelength in the infrared region having a wavelength of 800 nm or more. For example, a YAG laser, a glass laser, and a carbon dioxide laser are exemplified. A helium neon (HeNe) laser can also be employed. -
FIG. 11B andFIG. 21 are explanatory views of the EL display panel manufacturing method and manufacturing apparatus in the fourth embodiment. InFIG. 11B , theTFT substrate 52 is conveyed into thefilm forming apparatus 116 from the convey-inchamber 113. - The thermal transfer device that thermally transfers the light-emitting
layer 17 is installed in thetransfer device chamber 117. TheTFT substrate 52 is conveyed into thetransfer device chamber 117 via theload lock chamber 112 a. TheTFT substrate 52 is conveyed into a chamber (HTL)chamber 111 c in which thehole transport layer 16 is deposited. In thecompartment chamber 111 c, as shown inFIG. 21A , thehole transport layer 16 is formed above thepixel electrode 15 of theTFT substrate 52. - Next, the
TFT substrate 52 is conveyed into atransfer device chamber 117 to which the light-emitting layer R is transferred. As shown inFIG. 21B , after thedonor film 197 is disposed at a position separated from theTFT substrate 52, thedonor film 197 is irradiated withlaser light 59 d having a wavelength in the infrared region or the visible light region. Thelaser beam 59 d passes through thebase film 191 and heats thephotoconversion film 192. - The released heat causes the
photoconversion film 192 of thedonor film 197 to expand, and the transferorganic film 195 a peels from thedonor film 197. The peeled transferorganic film 195 is transferred onto thehole transport layer 16 of theTFT substrate 52 to a desired pattern and thickness as the light-emittinglayer 17R. The transferorganic film 195 a becomes the light-emittinglayer 17R. - As shown in
FIG. 21B , the transferorganic film 195 is thermally transferred to theTFT substrate 52 as the light-emitting layer 17R.b However, as illustrated inFIG. 20 , the transferorganic film 195 may adhere as an adherent 201 b on thebank 95 as well as above thered pixel electrode 15R. Further, in some cases, the adheringmaterial 201 a is attached not only to thered pixel electrode 15R but also above thegreen pixel electrode 15G and above theblue pixel electrode 15B. - The
deposit 201 b adhering to thebank 95 may peel off and adhere to thepixel electrode 15 and cause a defect. Further, the adheringmaterial 201 a attached above thegreen pixel electrode 15G and above theblue pixel electrode 15B emits light, which may cause a color adulteration problem. -
FIG. 20 is an explanatory view of a method for reforming or removing thedeposit 201 generated in the manufacturing process of the EL display panel of the present invention. - The
deposit 201 adhered to an unnecessary portion by thermal transfer is irradiated with alaser beam 59 a to be reformed. Thedeposit 201 is irradiated with laser light 59 a in the ultraviolet band. The guest material of thedeposit 201 is reformed by irradiation with laser light 59 a having an ultraviolet wavelength. Due to the reforming, thedeposit 201 does not emit light or is removed. - The
laser beam 59 a can be the same as thelaser beam 59 inFIG. 4 . Thesame laser device 58 can be used. The wavelength of thelaser beam 59 a is in the ultraviolet region. - The
deposit 201 is reformed by the irradiation of thelaser beam 59 a. Alternatively, thedeposit 201 is heated and evaporated by irradiation with thelaser beam 59 a, and is removed from above thepixel electrode 15. - Next, the
TFT substrate 52 is conveyed into the compartment chamber (EML (G)) 111 b. In thecompartment chamber 111 b, as shown inFIG. 21C , the light-emittinglayer 17G is laminated above the light-emittinglayer 17R by a vapor deposition method. - The vapor-deposition
fine mask 251 is not used in the vacuum vapor deposition step of the light-emittinglayer 17G. The light-emittinglayer 17G is deposited on theentire display screen 36 of the display panel using a rough deposition mask (not shown). Accordingly, the light-emittinglayer 17G is formed in common above thepixel electrode 15R, thepixel electrode 15G, and thepixel electrode 15B. - The
TFT substrate 52 is conveyed into thelaser device chamber 118 via theload lock chamber 112 b. In thelaser device chamber 118, as shown inFIG. 21D , the light-emittinglayer 17G of theTFT substrate 52 is irradiated with laser light 59 a. Thelaser light 59 a irradiates the light-emittinglayer 17G above thepixel electrode 15B. Thelaser light 59 a is not applied to the light-emittinglayer 17G above thepixel electrode 15R and thepixel electrode 15G. The light-emittinglayer 17G is reformed by the irradiated portion of thelaser light 59 a to become a reformedportion 96 b. - Since the light-emitting
layer 17G corresponding to thepixel electrode 15R and thepixel electrode 15G is not irradiated with thelaser light 59 a, the performance as the light-emitting layer is maintained. - Next, the
TFT substrate 52 is conveyed into a compartment chamber (EML (B) ETL) 111 e. In thecompartment chamber 111 e, as shown inFIG. 21E , the light-emittinglayer 17B is laminated above the light-emittinglayer 17G by a vapor deposition method. - The vapor-deposition
fine mask 251 is not used in the vacuum vapor deposition process of the light-emittinglayer 17B. The light-emittinglayer 17B is deposited on theentire display screen 36 of the display panel using a rough deposition mask (not shown). Therefore, the light-emittinglayer 17B is formed in common above thepixel electrode 15R, thepixel electrode 15G, and thepixel electrode 15B. - Next, as illustrated in
FIG. 21F , the electron-transport layer 18 is formed above the light-emittinglayer 17B, then the electron-injection layer is formed, and thecathode electrode 19 is stacked on the electron-transport layer 18. - The panel structure manufactured by the EL display panel manufacturing method described in
FIG. 21 is the same as that inFIG. 16 . Since the structure and operation of the EL display panel inFIG. 16 have been described, description thereof will be omitted. The fourth embodiment is different in that the light-emittinglayer 17 ofFIG. 16 is formed by a thermal transfer method. - In the manufacturing method of the present invention shown in
FIG. 21 , the formation of the light-emittinglayer 17R using thedonor film 197 or the like has been described as an example. For example, it is also a technical category of the present invention to form other light-emitting layers such as the light-emittinglayer 17G and the light-emittinglayer 17B with thedonor film 197 or the like. Moreover, it is not limited to the light-emittinglayer 17. For example, the insulatingfilm 14 may be formed. By forming the insulatingfilm 14 using thedonor film 197 or the like, for example, as shown inFIG. 1 , the thicknesses of the insulatingfilm 14R, the insulatingfilm 14G, and the insulatingfilm 14B can be easily set. -
FIGS. 22 and 23 are a cross-sectional view of an EL display panel and an explanatory view of a manufacturing method according to the fifth embodiment of the present invention. - In
FIG. 22 , a light-emittinglayer 17R and a light-emitting layer EML (GB) are formed above thered pixel electrode 15R. A light-emitting layer EML (GB) is formed above thegreen pixel electrode 15G and theblue pixel electrode 15B. - The light-emitting layer EML (GB) is formed by codepositing a host material, a green light emitting guest material, and a blue light emitting guest material.
- Hereinafter, a manufacturing method of the fifth embodiment of the present invention will be described with reference to the drawings. As illustrated in
FIG. 23A , thehole transport layer 16 is formed on theTFT substrate 52 above thepixel electrode 15. Next, as illustrated inFIG. 23B , a vapor-depositionfine mask 251R is disposed on theTFT substrate 52 in order to form the red light-emittinglayer 17R. The red light-emittinglayer material 172R is evaporated, and the light-emittinglayer 17R is laminated on thehole transport layer 16. The light-emittinglayer 17R is formed by codepositing a host material and a red guest material. - Next, as illustrated in
FIG. 23C , a light-emitting layer EML (GB) is laminated. The light-emitting layer EML (GB) contains a green light emitting guest material and a blue light emitting guest material. The light-emitting layer EML (GB) is formed by codepositing a host material, a green light emitting guest material, and a blue light emitting guest material. - Next, the
TFT substrate 52 is conveyed into thelaser device chamber 118, and as shown inFIG. 23D , the light-emitting layer EML (GB) above theblue pixel electrode 15B is irradiated with thelaser light 59 c. When thelaser beam 59 c is irradiated, the green guest material G in the light-emitting layer EML (GB) absorbs thelaser beam 59 c and becomes the reformedportion 96. - As shown in
FIG. 3C , a material that hardly absorbs thelaser beam 59 c is selected as the host material and the green guest material B. As the green guest material G, a material that easily absorbs thelaser light 59 c is selected. - Preferably, as shown in
FIG. 3C , the guest material B is selected such that the absorptance of the guest material B is 25% or less when the absorptivity of the guest material G is 100% at the wavelength of thelaser beam 59 c. Further, the material is selected so that the difference between the absorption rate of the guest material G and the absorption rate of the guest material B is three times or more. - Since the light-emitting
layer 17G above thegreen pixel electrode 15G is not irradiated with thelaser light 59 c, the guest material G of the light-emittinglayer 17G is in a state capable of emitting light. - Next, as illustrated in
FIG. 23E , the electron-transport layer 18 is formed above the light-emitting layer EML (GB), and as illustrated inFIG. 23F , the electron-injection layer is formed, and thecathode electrode 19 is laminated onto the electron-transport layer 18. - The absorption spectrum of the red guest material R included in the light-emitting
layer 17R above thepixel electrode 15R inFIG. 22 at least partially overlaps the emission spectrum of the green guest material in the light-emitting layer EML (GB). Further, the emission spectrum of the green guest material of the light-emitting layer EML (GB) at least partially overlaps the emission spectrum of the blue guest material B of the light-emitting layer EML (GB). - In the light-emitting
layer 17R above thepixel electrode 15R, recombination of electrons and holes mainly occurs in the red guest material R of the light-emittinglayer 17R, but recombination occurs in the green guest material G and blue of the light-emitting layer EML (GB). This may also occur in the guest material B. - The green guest material G of the light-emitting layer EML (GB) absorbs energy for exciting the blue guest material B. The red guest material R included in the light-emitting
layer 17R above thepixel electrode 15R absorbs energy that excites the green guest material G and emits light. The light-emittinglayer 17R of thepixel electrode 15R of the EL display panel of the present invention shown inFIG. 22 emits red light. - In the light-emitting layer EML (GB) above the
pixel electrode 15G, recombination of electrons and holes mainly occurs in the green guest material G of the light-emittinglayer 17G, but recombination occurs in the blue guest material of the light-emitting layer EML (GB). It may also occur in the blue guest material B of B. - The green guest material G of the light-emitting layer EML (GB) absorbs energy that excites the blue guest material B of the light-emitting layer EML (GB). The light-emitting layer EML (GB) of the
pixel electrode 15G of the EL display panel of the present invention shown inFIG. 22 emits green light. - In the light-emitting layer EML (GB) above the
pixel electrode 15B, the contained green guest material G is not excited by being irradiated with thelaser beam 59 c. In the light-emitting layer EML (GB) above thepixel electrode 15B, the blue guest material B emits light. Therefore, thepixel 37 of thepixel electrode 15B emits blue light. -
FIGS. 24 and 25 are a cross-sectional view of an EL display panel according to the sixth embodiment of the present invention and an explanatory diagram of the manufacturing method. - In
FIG. 24 , the light-emitting layer EML (RGB) is formed above the red, green, andblue pixel electrodes 15. The light-emitting layer EML (RGB) is formed by codepositing a host material, a red light-emitting guest material, a green light-emitting guest material, and a blue light-emitting guest material. - A manufacturing method of the sixth embodiment of the present invention will be described below. As shown in
FIG. 25A , thehole transport layer 16 is formed on theTFT substrate 52 above thepixel electrode 15. Next, as illustrated inFIG. 25B , the light-emitting layer 17RGB is laminated on thehole transport layer 16 on theTFT substrate 52. The light-emitting layer 17RGB is formed by codepositing a host material, a red light-emitting guest material, a green light-emitting guest material, and a blue light-emitting guest material. - Next, the
TFT substrate 52 is conveyed into thelaser device chamber 118, and as shown inFIG. 25C , thelaser light 59 a is applied to the light-emitting layer EML (RGB) above thegreen pixel electrode 15G and theblue pixel electrode 15B. When thelaser beam 59 a is shone onto it, the red guest material R in the light-emitting layer EML (RGB) absorbs thelaser beam 59 a and becomes the reformedportion 96 a. - As shown in
FIG. 3D , for the red guest material R, a material that easily absorbs thelaser beam 59 a is selected. As the green guest material G and the blue guest material B, materials that hardly absorb thelaser light 59 a are selected. - Preferably, as shown in
FIG. 3D , the guest material G is selected such that the absorption rate of the guest material G is 25% or less when the absorption rate of the guest material R is 100% at the wavelength of thelaser beam 59 a. Further, the material is selected so that the difference between the absorption rate of the guest material R and the absorption rate of the guest material G is three times or more. The material is preferably selected so as to be 4 times or more. - Since the light-emitting
layer 17R above thered pixel electrode 15R is not irradiated with thelaser light 59 a, the guest material R, the guest material G, and the guest material B of the light-emitting layer 17RGB are maintained in a state capable of emitting light. - Next, as illustrated in
FIG. 25D ,laser light 59 b is applied to the light-emitting layer EML (RGB) above theblue pixel electrode 15B. When thelaser beam 59 b is irradiated, the green guest material G of the light-emitting layer EML (RGB) absorbs thelaser beam 59 b and becomes the reformedportion 96 b. - As shown in
FIG. 3D , for the green guest material G, a material that easily absorbs thelaser beam 59 b is selected. For the blue guest material B, a material that hardly absorbs thelaser beam 59 b is selected. - Preferably, as shown in
FIG. 3D , the guest material B is selected such that the absorption rate of the guest material B is 25% or less when the absorption rate of the guest material G is 100% at the wavelength of thelaser beam 59 b. Further, the material is selected so that the difference between the absorption rate of the guest material G and the absorption rate of the guest material B is three times or more. - Next, as shown in
FIG. 25E , an electron-transport layer 18 is formed above the light-emitting layer EML (RGB), an electron-injection layer is formed as shown inFIG. 25F , and thecathode electrode 19 is laminated onto the electron-transport layer 18. - In the light-emitting layer EML (RGB) above the
pixel electrode 15R inFIG. 24 , recombination of electrons and holes mainly occurs in the red guest material R of the light-emittinglayer 17R, but recombination occurs in the light-emitting layer EML (RGB). It may also occur in the green guest material G and the blue guest material B. - The green guest material G of the light-emitting layer EML (RGB) absorbs the energy with which the blue guest material B is excited. The red guest material R included in the light-emitting layer EML (RGB) above the
pixel electrode 15R emits light by absorbing energy excited by the green guest material G. The light-emittinglayer 17R of thepixel electrode 15R of the EL display panel of the present invention shown inFIG. 24 emits red light. - The green guest material G of the light-emitting layer EML (RGB) above the
pixel electrode 15G absorbs energy that excites the blue guest material B of the light-emitting layer EML (RGB). The light-emitting layer EML (RGB) of thepixel electrode 15G of the EL display panel of the present invention shown inFIG. 24 emits green light. - The green guest material G contained in the light-emitting layer EML (RGB) above the
pixel electrode 15B is not excited by being irradiated with thelaser light 59 b. Further, the red guest material R contained in the light-emitting layer EML (RGB) is not excited by being irradiated with thelaser light 59 a. In the light-emitting layer EML (RGB) above thepixel electrode 15B, the blue guest material B emits light. Therefore, thepixel 37 of thepixel electrode 15B emits blue light. - In the above embodiment, the light-emitting
layer 17 and the like above thepixel electrode 15 are irradiated with thelaser light 59 to reform the light-emittinglayer 17 and the like. However, the present invention is not limited to this. When the light-emittinglayers 17 of different colors overlap between adjacent pixels, color mixing occurs. For example, when the red light-emittinglayer 17R and the green light-emittinglayer 17G overlap, the overlapping light-emitting layer may generate red light and green light, and mixed color light may be generated. - As shown in
FIG. 20 , the light-emittinglayer 17 and the like may be reformed or removed by irradiatinglaser light 59 between thepixels 37. -
FIGS. 26 and 27 are a cross-sectional view of an EL display panel according to a seventh embodiment of the present invention and an explanatory view of the manufacturing method. In the seventh embodiment,laser light 59 is irradiated between adjacent pixels to reform the light-emittinglayer 17 and the like between adjacent pixels. In the seventh embodiment, thepixel 37 is irradiated with thelaser light 59 c and the irradiated light-emittinglayer 17 is reformed to form a non-light-emitting layer in the first embodiment described with reference toFIGS. 1 and 10 is illustrated. - In the seventh embodiment, as shown in
FIG. 27 , the light-emittinglayer 17 between thepixel electrodes 15 and thehole transport layer 16 are irradiated with alaser beam 59 c to form a reformedportion 96 c. The section structure illustrates the embodiment ofFIG. 1 , wherein thebank 95 ofFIG. 1 is eliminated, and the portion of thebank 95 ofFIG. 1 is irradiated with thelaser beam 59 c making a structure where the locations irradiated with thelaser beam 59 c are a reformedportion 96 c. - By not forming the
bank 95, the step of forming thebank 95 can be omitted, and the manufacturing cost can be reduced. In addition, the aperture ratio of thepixel 37 can be increased, the current concentration in thepixel 37 is eliminated, and the life of theEL element 22 can be increased. - Further, by irradiating the
laser light 59 c between thepixels 37, color mixing due to overlapping of the light-emittinglayers 17 of different colors betweenadjacent pixels 37 is eliminated, and mixed color light emission is eliminated. - As shown in
FIG. 27A , thehole transport layer 16 is formed above thepixel electrode 15 of theTFT substrate 52. - Next, as illustrated in
FIG. 27B , the light-emittinglayer 17R is laminated on thehole transport layer 16 by a vapor deposition method. Further, the light-emittinglayer 17 of theTFT substrate 52 is irradiated with alaser beam 59 a. Thelaser light 59 a is applied to the light-emittinglayer 17R above thepixel electrode 15G and thepixel electrode 15B. - As shown in
FIG. 27C , the light-emittinglayer 17R is reformed by the irradiated portion of thelaser beam 59 a to become a reformedportion 96 a. Next, as illustrated inFIG. 27C , the light-emittinglayer 17G is laminated on the light-emittinglayer 17R by a vapor deposition method. - Next, as shown in
FIG. 27D , the light-emittinglayer 17G of theTFT substrate 52 is irradiated with alaser beam 59 b. Thelaser light 59 b irradiates the light-emittinglayer 17G above thepixel electrode 15B. The light-emittinglayer 17G is reformed by the irradiated portion of thelaser beam 59 b to become a reformedportion 96 b. - As shown in
FIG. 27E , the light emitting material between thepixels 37 is reformed by irradiatinglaser light 59 c between adjacent pixels. - As shown in
FIG. 27E , when thelaser beam 59 c is irradiated, aslit mask 92 or the like is used, and thelaser beam 59 c is irradiated from the opening (light transmission portion) of the slit mask 92 c. The gap can be reformed. - Next, as illustrated in
FIG. 27F , the electron-transport layer 18 is formed above the light-emittinglayer 17B, and thecathode electrode 19 is stacked on the electron-transport layer 18. - As described above, the technical idea of the present invention is to irradiate a laser beam or the like to reform or remove the light-emitting
layer 17 or the like to make it non-light emitting. - The contents (or part of the contents) described in each drawing of the embodiment can be applied to various electronic devices. Specifically, it can be applied to a display portion of an electronic device.
- Such electronic devices include video cameras, digital cameras, goggles-type displays, navigation systems, sound playback devices (car audio, audio components, etc.), computers, game devices, portable information terminals (mobile computers, mobile phones, portable games). And an image reproducing apparatus (specifically, an apparatus having a display capable of reproducing a recording medium such as digital versatile disc (DVD) and displaying the image).
-
FIG. 29A is a perspective view of a display using theEL display panel 271 of the present invention. TheEL display panel 271 is attached to thehousing 272. The display illustrated inFIG. 29A has a function of displaying various information (still images, moving images, text images, and the like) on the display portion. -
FIG. 29B is a perspective view of a smartphone using theEL display panel 271 of the present invention. TheEL display panel 271 is installed into thehousing 272. - An EL display device using the EL display panel according to the present embodiment is a concept including a system device such as an information device. The concept of a display device includes system equipment such as information equipment.
- As described above, the embodiments have been described as examples of the technology in the present disclosure. For this purpose, the accompanying drawings and detailed description are provided.
- In addition, since the above-described embodiments are for illustrating the technique in the present disclosure, various modifications, replacements, additions, omissions, and the like can be made within the scope of the claims and the equivalents thereof.
- The present disclosure is useful for an EL display device and an EL display panel. In particular, it is useful for an active organic EL flat panel display. Moreover, it is useful as a manufacturing method and manufacturing apparatus of the EL display panel of the present invention.
-
-
- 12: reflective film
- 14: insulating film
- 15: pixel electrode
- 16: hole-transport layer (HTL)
- 17: light-emitting layer (EML)
- 18: electron-transport layer (ETL)
- 19: cathode electrode
- 20: sealing membrane
- 21: TFT (transistor)
- 22: EL element
- 23: capacitor
- 27: sealing film
- 28: planarizing film
- 29: circularly polarizing plate (circularly polarizing film)
- 31: gate driver IC (circuit)
- 32: source driver IC (circuit)
- 34: gate signal line
- 35: source signal line
- 36: display screen
- 37: pixel
- 51: sliding stage
- 52: TFT substrate
- 53: temperature-adjusting plate
- 54: vacuum pump
- 55: exhaust duct
- 56: deposition chamber
- 58: laser device
- 59: laser beams
- 60: optical density filter
- 61: cylindrical lens
- 62: mirror galvanometer
- 63: laser window
- 64: fθ lens
- 65: metal evaporation source
- 66: organic evaporation source
- 71: fluorescence/phosphorescence
- 72: beam-splitting mirrors
- 73: mirrors
- 74: lenses
- 75: filter
- 76: optical amplifier circuit
- 77: beam detection device
- 78: beam control device
- 79: laser control circuit
- 80: photodiode (light sensor)
- 91: laser spot
- 92: slit mask
- 94: transparent substrate
- 95: bank
- 111: compartment chamber
- 112: load-lock chamber
- 113: convey-in chamber
- 114: convey-out chamber
- 115: central chamber
- 116: film-forming tool
- 117: transfer device chamber
- 118: laser device chamber
- 121: black synthetic resin
- 122: LED
- 123: substrate
- 181: exhaust port
- 182: sliding stage
- 183: support mechanism
- 184: raise/lower mechanism
- 185: control mechanism
- 186: pressure roller
- 191: base film
- 192: photoconversion film
- 193: intermediate film
- 194: buffer film
- 195: transfer organic film
- 197: donor film
- 271: EL display panel
- 272: housing
Claims (21)
1-20. (canceled)
21. An EL display panel in which first-color pixels, second-color pixels, and third-color pixels are disposed in matrix form, the EL display panel comprising:
a first light-emitting layer formed commonly in the first-color pixels, the second-color pixels, and the third-color pixels;
a second light-emitting layer formed as an upper layer of the first light-emitting layer; and
a third light-emitting layer formed as an upper layer of the second light-emitting layer; wherein
the second-color pixels and the third-color pixels in the first light-emitting layer are laser-irradiation reformed, and
the second light-emitting layer in the third-color pixels is laser-irradiation reformed.
22. An EL display panel as set forth in claim 1, wherein:
the first light-emitting layer and the second light-emitting layer each contain a guest material and a host material; and
in the laser-irradiation reformed first light-emitting layer and the laser-irradiation reformed second light-emitting layer, among the three relationships,
i. the bandgap of the guest material is greater than the bandgap of the host material,
ii. in terms of the relative dispositions of the highest occupied molecular orbitals (HOMOs) in the guest material and in the host material, the disposition in the guest material is lower than in the host material, and
iii. in terms of the lowest unoccupied molecular orbitals (LUMO) in the guest material and in the host material, the disposition in the guest material is higher than in the host material
at least one or more relationships hold.
23. An EL display panel as set forth in claim 1, wherein:
the first light-emitting layer and the second light-emitting layer each contain a guest material and a host material; and
in the laser-irradiation reformed first light-emitting layer and the laser-irradiation reformed second light-emitting layer, among the two relationships,
i. the guest material is decomposed, and
ii. the molecular structure of the guest material is altered,
at least one or more relationships hold.
24. An EL display panel as set forth in claim 1, wherein:
among a first interference order number for the first-color pixels, a second interference order number for the second-color pixels, and a third interference order number for the third-color pixels, the interference order number for the pixels of any one color differs from the interference order number for the pixels of the other colors.
25. An EL display panel as set forth in claim 1, wherein:
pixel cathode electrodes in each of the first-color pixels, the second-color pixels, and the third-color pixels are light-permeable;
the EL display panel is of structure whereby light generated in, of the first light-emitting layer and the second light-emitting layer, each of the light-emitting layers exits from the cathode-electrode side of the respective pixels; and
pixel anode electrodes in each of the light-emitting layers are transparent electrodes, reflective films are formed on underlayers of the pixel anode electrodes, and in the pixels of at least one color, the reflective films are laminated on the transparent electrodes, wherein light generated in each of the light-emitting layers is reflected by the reflective films.
26. An EL display panel as set forth in claim 1, wherein:
pixel cathode electrodes in each of the first-color pixels, the second-color pixels, and the third-color pixels are light-permeable;
the EL display panel is of structure whereby light generated in the first light-emitting layer and the second light-emitting layer of the respective light-emitting layers exits from the cathode-electrode side;
pixel anode electrodes in each of the light-emitting layers are transparent electrodes,
reflective films are formed on underlayers of the pixel anode electrodes,
between the pixel anode electrode and the reflective film in the pixels of at least one color among the first-color pixels, the second-color pixels, and the third-color pixels, a light-permeable thin film is formed,
among optical distance between the reflective film and the cathode electrode in the first-color pixels, optical distance between the reflective film and the cathode electrode in the second-color pixels, and optical distance between the reflective film and the cathode electrode in the first-color pixels, the optical distance for the pixels of at least one color differs from the optical distance for the pixels of the other colors.
27. An EL display panel as set forth in claim 1, wherein:
pixel anode electrodes in the first-color pixels, the second-color pixels, and the third-color pixels are transparent electrodes;
reflective films are formed on underlayers of the pixel anode electrodes in each of the first-color pixels, second-color pixels, and third-color pixels; and
the pixel anode electrodes and, as electrodes, the reflective films constitute capacitors.
28. An EL display panel as set forth in claim 1, wherein:
the first light-emitting layer and the second light-emitting layer each contain a guest material and a host material; and
the absorptivity of the guest material with respect to irradiation-reforming laser light is greater than the absorptivity of the host material with respect to the irradiation-reforming laser light.
29. An EL display panel as set forth in claim 1, wherein:
a hole-transport layer is formed on an underlayer of the laser-irradiation reformed first light-emitting layer; and
the absorptivity of the hole-transport layer with respect to irradiation-reforming laser light is less than the absorptivity of the first light-emitting layer with respect to the irradiation-reforming laser light.
30. An EL display panel as set forth in claim 1, wherein:
the first light-emitting layer and the second light-emitting layer are laser-irradiation reformed at a laser-beam wavelength of from 10 nm to 400 nm;
on being irradiated with the laser beam, the first light-emitting layer and the second light-emitting layer of the respective light-emitting layers generate phosphorescence or fluorescence; and
intensity of the generated phosphorescence or fluorescence is a basis of feedback-controlling of the laser beam whereby the first light-emitting layer and the second light-emitting layer are laser-irradiation reformed.
31. An EL display panel comprising first-color pixels, second-color pixels, and third-color pixels disposed in matrix form, wherein:
a first light-emitting layer, a second light-emitting layer, and a third light-emitting layer are laminated in the first-color pixels;
the second light-emitting layer and the third light-emitting layer are also laminated in the second-color pixels;
the second light-emitting layer and the third light-emitting layer are also laminated in the third-color pixels;
the first light-emitting layer in the first-color pixels is formed independently from the light-emitting layers in the other color pixels;
the second light-emitting layer is formed commonly in the first-color pixels, the second-color pixels, and the third-color pixels; and
the second light-emitting layer in the third-color pixels is laser-irradiation reformed.
32. An EL display panel as set forth in claim 11, wherein:
the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer each contain a guest material and a host material;
the guest material in the first light-emitting layer is absorbent of energy from the guest material in the second light-emitting layer; and
the guest material in the second light-emitting layer is absorbent of energy from the guest material in the third light-emitting layer.
33. An EL display panel as set forth in claim 11, wherein among the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer formed in the first-color pixels, at least one of the light-emitting layers is formed by thermal-transfer technology.
34. An EL display panel as set forth in claim 11, wherein among the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer formed in the first-color pixels, at least one of the light-emitting layers is formed utilizing a vapor-deposition fine mask.
35. An EL display panel as set forth in claim 11, wherein:
on being irradiated with a laser beam, the second light-emitting layer in the third-color pixels generates phosphorescence or fluorescence; and
the generated phosphorescence or fluorescence, converted into a signal voltage via a photoelectric converter, feedback-controls the laser beam whereby the second light-emitting layer is laser-irradiation reformed.
36. An EL display panel as set forth in claim 11, wherein:
the third-color pixels are blue-light emitting pixels;
the interference order number of the third-color pixels is the first order; and
the interference order number of the first-color pixels and the second-color pixels is the zeroth order.
37. An EL display panel as set forth in claim 11, wherein:
the interference order number of the third-color pixels is the first order;
the interference order number of the first-color pixels and the second-color pixels is the zeroth order;
the film thickness of the hole-transport layer in the third-color pixels is thicker than the respective film thicknesses of the hole-transport layer in the first-color pixels and the hole-transport layer in the second-color pixels.
38. An EL display panel as set forth in claim 11, wherein:
pixel cathode electrodes in each of the first-color pixels, the second-color pixels, and the third-color pixels are light-permeable;
the EL display panel is of structure whereby light generated in, of the first light-emitting layer, the second light-emitting layer, and the third light emitting layer, each of the light-emitting layers is extracted from the pixels' cathode-electrode side;
a sealing film made from SiON is formed on an upper layer on the cathode electrode of each pixel; and
a circularly polarizing film is disposed on the pixels' light-emitting side.
39. An apparatus for manufacturing an EL display panel in which first-color pixels, second-color pixels, and third-color pixels are disposed in matrix form, the EL-display-panel manufacturing apparatus comprising:
a first light-emitting-layer forming means for forming a first light-emitting layer commonly in the first-color pixels, the second-color pixels, and the third-color pixels;
a laser-beam generating means for selecting, and directing a laser beam onto, at least one of the first light-emitting layer in the second-color pixels, and the first light-emitting layer in the third-color pixels; and
a second light-emitting layer forming means for forming a second light-emitting layer onto the first light-emitting layer.
40. An EL-display-panel manufacturing apparatus as set forth in claim 19, further comprising a retaining container having a transmissive section for transmitting the laser beam; wherein
the EL display panel is disposed in the retaining container;
the laser beam is transmissible through the transmissive section and optically guided inside the retaining container.
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JP2017209417 | 2017-10-30 | ||
PCT/JP2018/011863 WO2018181049A1 (en) | 2017-03-30 | 2018-03-23 | Method for manufacturing el display panel, manufacturing device for el display panel, el display panel, and el display device |
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PCT/JP2018/011863 A-371-Of-International WO2018181049A1 (en) | 2017-03-30 | 2018-03-23 | Method for manufacturing el display panel, manufacturing device for el display panel, el display panel, and el display device |
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US17/546,010 Division US20220208872A1 (en) | 2017-03-30 | 2021-12-08 | Electroluminescent Display-Panel Manufacturing Method |
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US16/499,868 Abandoned US20200111846A1 (en) | 2017-03-30 | 2018-03-23 | EL Display-Panel Manufacturing Method, EL Display-Panel Manufacturing Apparatus, EL Display panel, and EL Display Device |
US17/546,010 Pending US20220208872A1 (en) | 2017-03-30 | 2021-12-08 | Electroluminescent Display-Panel Manufacturing Method |
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Cited By (2)
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US11035999B2 (en) * | 2016-11-30 | 2021-06-15 | Samsung Display Co., Ltd. | Backlight unit, display device and manufacturing method of display device |
WO2024041659A1 (en) * | 2022-08-26 | 2024-02-29 | 大唐移动通信设备有限公司 | Measurement reporting method and apparatus, and terminal and network device |
Families Citing this family (7)
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US20200111846A1 (en) * | 2017-03-30 | 2020-04-09 | Qualtec Co., Ltd. | EL Display-Panel Manufacturing Method, EL Display-Panel Manufacturing Apparatus, EL Display panel, and EL Display Device |
JP7117773B2 (en) * | 2018-09-07 | 2022-08-15 | 株式会社Joled | Display panel manufacturing apparatus and display panel manufacturing method |
JP7281811B2 (en) * | 2018-10-27 | 2023-05-26 | 株式会社クオルテック | EL display panel manufacturing equipment |
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JP7060633B2 (en) * | 2020-01-29 | 2022-04-26 | キヤノントッキ株式会社 | Film forming equipment and electronic device manufacturing equipment |
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Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3849066B2 (en) * | 1996-05-15 | 2006-11-22 | ケミプロ化成株式会社 | Multi-color organic EL device, manufacturing method thereof, and display using the same |
JP2001131434A (en) * | 1999-11-08 | 2001-05-15 | Chemiprokasei Kaisha Ltd | Light-emitting organic pigment capable of photo-bleaching and multi-color organic el element using same |
JP4479065B2 (en) * | 2000-06-22 | 2010-06-09 | 株式会社Ihi | Laser processing equipment |
JP3723845B2 (en) | 2002-03-26 | 2005-12-07 | 国立大学法人富山大学 | Method and apparatus for measuring film thickness of organic thin film used in organic electroluminescence device |
JP2005307254A (en) * | 2004-04-20 | 2005-11-04 | Canon Inc | Vapor deposition method |
JP2007239098A (en) | 2006-02-10 | 2007-09-20 | Semiconductor Energy Lab Co Ltd | Film forming apparatus, film forming method, and manufacturing method of light emitting element |
US20080238297A1 (en) * | 2007-03-29 | 2008-10-02 | Masuyuki Oota | Organic el display and method of manufacturing the same |
JP2009063711A (en) | 2007-09-05 | 2009-03-26 | Canon Inc | Inspection method of organic el element and organic el display device, and production system |
JP4544645B2 (en) * | 2008-04-25 | 2010-09-15 | 東芝モバイルディスプレイ株式会社 | Manufacturing method of organic EL display device |
CN102106014B (en) * | 2008-07-24 | 2015-05-06 | 皇家飞利浦电子股份有限公司 | Device and method for lighting |
JP4775863B2 (en) * | 2008-09-26 | 2011-09-21 | 東芝モバイルディスプレイ株式会社 | Organic EL display device and manufacturing method thereof |
JP2010113171A (en) * | 2008-11-07 | 2010-05-20 | Toppan Printing Co Ltd | Method for producing photosensitive resin letterpress plate, method for producing organic electronic device, and method for producing organic electroluminescent display device |
JP2010226055A (en) * | 2009-03-25 | 2010-10-07 | Toshiba Mobile Display Co Ltd | Organic el display |
JP2011191739A (en) * | 2010-02-16 | 2011-09-29 | Toshiba Mobile Display Co Ltd | Organic electroluminescence device |
JP2011003558A (en) * | 2010-10-07 | 2011-01-06 | Hitachi Displays Ltd | Manufacturing method for display device |
JP2012124104A (en) * | 2010-12-10 | 2012-06-28 | Canon Inc | Method for manufacturing organic el display device |
WO2012164598A1 (en) | 2011-05-27 | 2012-12-06 | パナソニック株式会社 | Method for producing organic light-emitting element, method for aging organic light-emitting element, organic light-emitting element, organic light-emitting device, organic display panel, and organic display device |
WO2014185228A1 (en) | 2013-05-16 | 2014-11-20 | コニカミノルタ株式会社 | Organic electroluminescence element pattern forming device |
JP6207263B2 (en) * | 2013-07-03 | 2017-10-04 | 株式会社ジャパンディスプレイ | Organic EL display device and manufacturing method thereof |
JP2015115178A (en) * | 2013-12-11 | 2015-06-22 | 株式会社ジャパンディスプレイ | Organic el display device and method for manufacturing organic el display device |
JP6512833B2 (en) | 2015-01-16 | 2019-05-15 | 株式会社ジャパンディスプレイ | Display device |
US20200111846A1 (en) | 2017-03-30 | 2020-04-09 | Qualtec Co., Ltd. | EL Display-Panel Manufacturing Method, EL Display-Panel Manufacturing Apparatus, EL Display panel, and EL Display Device |
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2018
- 2018-03-23 US US16/499,868 patent/US20200111846A1/en not_active Abandoned
- 2018-03-23 WO PCT/JP2018/011863 patent/WO2018181049A1/en active Application Filing
- 2018-03-27 JP JP2018059299A patent/JP7029769B2/en active Active
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2021
- 2021-12-08 US US17/546,010 patent/US20220208872A1/en active Pending
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2022
- 2022-02-11 JP JP2022020013A patent/JP7266920B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11035999B2 (en) * | 2016-11-30 | 2021-06-15 | Samsung Display Co., Ltd. | Backlight unit, display device and manufacturing method of display device |
WO2024041659A1 (en) * | 2022-08-26 | 2024-02-29 | 大唐移动通信设备有限公司 | Measurement reporting method and apparatus, and terminal and network device |
Also Published As
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US20220208872A1 (en) | 2022-06-30 |
WO2018181049A1 (en) | 2018-10-04 |
JP7266920B2 (en) | 2023-05-01 |
JP7029769B2 (en) | 2022-03-04 |
JP2022065074A (en) | 2022-04-26 |
JP2019071267A (en) | 2019-05-09 |
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