JP7060633B2 - Film forming equipment and electronic device manufacturing equipment - Google Patents

Description

The present invention relates to a film forming apparatus and an electronic device manufacturing apparatus for forming a thin film on a substrate.

Conventionally, a technique of forming a thin film on a substrate by sputtering or the like is known. However, for example, when the surface of the substrate is provided with irregularities, cavities called voids may be formed inside the thin film to be formed. As a countermeasure, a technique of repeatedly performing sputtering and etching while transporting a substrate is known (see Patent Document 1). According to such a technique, it is possible to form a thin film along the unevenness of the surface of the substrate.

However, with the above techniques, in the case of a large substrate, the position of the substrate and the mask are likely to be misaligned, and it is difficult to improve the accuracy of the position where the thin film is formed.

Japanese Unexamined Patent Publication No. 2012-67394

An object of the present invention is to provide a film forming apparatus and an electronic device manufacturing apparatus capable of improving the accuracy of a thin film forming position while adopting a configuration in which a film forming film is formed while irradiating and etching a film forming material. There is something in it.

The present invention employs the following means to solve the above problems.

That is, the film forming apparatus of the present invention is
With the chamber
A film-forming material discharging device provided in the chamber and performing a film-forming operation by discharging the film-forming material toward the surface of the substrate held in the chamber.
An etching beam irradiating device provided in the chamber and performing an etching operation by irradiating the surface of the substrate with an etching beam.
A transport device that transports the film-forming material discharge device and the etching beam irradiation device, and
Equipped with
While transporting the film-forming material discharging device and the etching beam irradiation device by the transport device, the film-forming operation by the film-forming material discharging device and the etching operation by the etching beam irradiation device are performed on the substrate. And
The etching beam irradiation device is characterized in that it is provided on both sides of the film forming material discharging device with respect to the transport direction of the transport device.

According to the present invention, the film forming operation and the etching operation are performed by the film forming material discharging device and the etching beam irradiating device, which are conveyed while the substrate is held, respectively, so that the accuracy of the thin film forming position is improved. be able to.

As described above, according to the present invention, it is possible to improve the accuracy of the thin film forming position while adopting a configuration in which the film is formed while irradiating and etching the film forming material.

FIG. 1 is a schematic configuration diagram of the internal configuration of the film forming apparatus according to the first embodiment of the present invention as viewed in a plane. FIG. 2 is a schematic configuration diagram showing a cross-sectional view of the internal configuration of the film forming apparatus according to the first embodiment of the present invention. FIG. 3 is a schematic configuration diagram showing a cross-sectional view of the internal configuration of the film forming apparatus according to the first embodiment of the present invention. FIG. 4 is a diagram illustrating the mechanism of the atmospheric arm. FIG. 5 is a schematic configuration diagram of a film forming material discharging device according to the first embodiment of the present invention. FIG. 6 is a schematic configuration diagram of the etching beam irradiation device according to the first embodiment of the present invention. FIG. 7 is a schematic cross-sectional view showing an example of an electronic device. FIG. 8 is a main configuration diagram of the film forming apparatus according to the second embodiment of the present invention. FIG. 9 is a main configuration diagram of the film forming apparatus according to the third embodiment of the present invention.

Hereinafter, embodiments for carrying out the present invention will be described in detail exemplary with reference to the drawings. However, the dimensions, materials, shapes, relative arrangements, etc. of the components described in this embodiment are not intended to limit the scope of the present invention to those alone unless otherwise specified. ..

(Example 1)
The film forming apparatus and the electronic device manufacturing apparatus according to the first embodiment of the present invention will be described with reference to FIGS. 1 to 7. FIG. 1 is a schematic configuration diagram of the internal configuration of the film forming apparatus according to the first embodiment of the present invention as viewed in a plane (viewed from above). FIG. 2 is a schematic configuration diagram of the internal configuration of the film forming apparatus according to the first embodiment of the present invention in a cross-sectional view. More specifically, in FIG. 1, the internal configuration seen in the direction of arrow V1 is as follows. It is the figure which showed the structure of the part in cross-section. FIG. 3 is a schematic configuration diagram of the internal configuration of the film forming apparatus according to the first embodiment of the present invention in a cross-sectional view. More specifically, in FIG. 1, the internal configuration viewed in the direction of arrow V2 is described. It is the figure which showed the structure of the part in cross-section. FIG. 4 is a diagram illustrating the mechanism of the atmospheric arm, and shows a part of the atmospheric arm in a schematic cross-sectional view. FIG. 5 is a schematic configuration diagram of the film-forming material discharging device according to the first embodiment of the present invention, and FIG. 5A is a schematic configuration diagram of the vicinity of the film-forming material discharging device as viewed from the front. b) is a cross-sectional view taken along the line AA in the figure (a). FIG. 6 is a schematic configuration diagram of the etching beam irradiating device according to the first embodiment of the present invention, FIG. 6A is a plan view of the etching beam irradiating device, and FIG. 6B is the same figure (a). ) Is a cross-sectional view of BB. FIG. 7 is a schematic cross-sectional view showing an example of an electronic device.

<Overall configuration of film forming equipment>
The overall configuration of the film forming apparatus according to this embodiment will be described with reference to FIGS. 1 to 3. The film forming apparatus 1 according to the present embodiment includes a chamber 10 having a vacuum atmosphere inside, a film forming material discharging device 100 provided in the chamber 10, an etching beam irradiation device 200 also provided in the chamber 10, and an etching beam irradiation device 200. It is provided with a transport device 300 for transporting these while holding them.

In the chamber 10, a substrate holding mechanism 11 for holding the substrate P and a mask holding mechanism 12 for holding the mask M are provided. By these holding mechanisms, the substrate P and the mask M are kept stationary during the film forming operation. The chamber 10 is an airtight container, and the inside thereof is maintained in a vacuum state (or a decompression state) by the exhaust pump 20. By opening the gas supply valve 30 and supplying gas into the chamber 10, it is possible to appropriately change the gas atmosphere (or pressure band) suitable for the treatment. The entire chamber 10 is electrically grounded by the grounding circuit 40.

The transport device 300 includes an atmosphere box 310, a pair of guide rails 321 and 322 for guiding the moving direction of the atmosphere box 310, a drive mechanism 330 for moving the atmosphere box 310, and the atmosphere driven by the movement of the atmosphere box 310. It is equipped with an arm 340. The atmosphere box 310 has a cavity inside, and is configured to communicate with the outside of the chamber 10 through the inside of the atmosphere arm 340. Therefore, the inside of the atmospheric box 310 is exposed to the atmosphere. By adopting such a configuration, the wirings 51 and 52 connected to the power supply 50 provided outside the chamber 10 can be connected to the film forming material discharging device 100 and the etching beam irradiating device 200. The film forming material discharging device 100 and the etching beam irradiating device 200 are fixed to the atmospheric box 310.

The atmosphere box 310 is configured to be reciprocally movable by a pair of guide rails 321 and 322. Further, the atmosphere box 310 is configured to reciprocate by a drive mechanism 330. The drive mechanism 330 according to the present embodiment employs a ball screw mechanism, and includes a ball screw 331 and a drive source 332 such as a motor for rotating the ball screw 331. However, the drive mechanism for reciprocating the atmosphere box 310 is not limited to the ball screw mechanism, and various known techniques such as a rack and pinion mechanism can be adopted. When a rack and pinion mechanism is adopted for the drive mechanism 330, it can be provided in the transport guide portion.

The atmosphere arm 340 is provided to arrange the wirings 51 and 52 connected to the power source 50 provided outside the chamber 10 in the cavity of the moving atmosphere box 310. That is, the atmosphere arm 340 is configured such that the inside thereof is formed of a cavity and that the atmosphere arm 340 operates following the movement of the atmosphere box 310. More specifically, the atmospheric arm 340 includes a first arm 341 and a second arm 342. One end of the first arm 341 is rotatably configured with respect to the bottom plate of the chamber 10. One end of the second arm 342 is rotatably pivotally supported with respect to the other end of the first arm 341, and the other end is rotatably supported with respect to the atmosphere box 310.

FIG. 4 shows a schematic cross-sectional view of the structure near one end of the first arm 341. As shown in the figure, the bottom plate of the chamber 10 is provided with a through hole 10a, and the first arm 341 is provided with a cylindrical protrusion 341a. A cylindrical member 341b with a step for rotatably connecting the bottom plate of the atmosphere box 310 and the first arm 341 is provided. One end of the cylindrical member 341b is inserted into a through hole 10a provided in the bottom plate of the chamber 10. Further, the protruding portion 341a provided on the first arm 341 is inserted from the other end side of the cylindrical member 341b. The annular gap between the through hole 10a and the cylindrical member 341b and the annular gap between the protrusion 341a and the cylindrical member 341b are sealed by the seal rings 341c and 341d, respectively.

With the above configuration, the first arm 341 is rotatably supported with respect to the bottom plate of the chamber 10, and the hollow portion inside the first arm 341 and the space outside the first arm 341 (inside the chamber 10). It is separated from the space). That is, the inside of the chamber 10 can be maintained in a vacuum state (or a decompression state). The same applies to the mechanism in which the first arm 341 and the second arm 342 are rotatably supported by the shaft, and the mechanism in which the second arm 342 and the atmosphere box 310 are rotatably supported by the shaft. Since it is a mechanism, its description will be omitted.

The transport device 300 configured as described above makes it possible to reciprocate the film forming material discharge device 100 and the etching beam irradiation device 200 fixed to the atmospheric box 310 together with the atmospheric box 310. As a result, the film forming material discharging device 100 and the etching beam irradiating device 200 are simultaneously operated during the movement of at least one of the outward path and the returning path, whereby the film forming operation and the etching operation are performed on the substrate P. Can be done at the same time. Therefore, even when the film formation is formed on the large substrate P, the film forming operation and the etching operation are simultaneously performed by the transport device 300 while moving the film forming material discharging device 100 and the etching beam irradiation device 200. As a result, the thin film can be continuously formed from one end side to the other end side of the substrate P. Further, even if the surface of the substrate P is provided with irregularities, a thin film is formed along the irregularities on the surface of the substrate P because a part of the formed portion is formed while being etched. It is possible to make it. When the film forming material discharging device 100 and the etching beam irradiating device 200 are arranged as shown in FIG. 2, the film forming operation and the etching operation are simultaneously performed in the process of moving from right to left in the figure. Let me do it. As a result, a thin film is formed while a part of the formed portion is etched.

<Film film material release device>
As the film-forming material discharging device in the present invention, various devices capable of forming a thin film on the substrate surface using the film-forming material can be applied. Here, an example of the film forming material discharging device 100 applicable to the film forming apparatus 1 according to the present embodiment will be described with reference to FIG. The film forming material discharging device 100 shown in FIG. 5 is a magnetron sputtering type sputtering device. The film forming material discharging device 100 includes a target unit 110, and a support block 120 and an end block 130 that support both ends of the target unit 110. The support block 120 and the end block 130 are fixed to the upper surface of the atmospheric box 310. The target unit 110 includes a cylindrical target 111, a cathode 112 which is an electrode arranged on the inner circumference thereof, and a magnet unit 113 arranged inside the cathode 112. The target 111 is rotatably supported by a support block 120 and an end block 130, and is configured to rotate during sputtering by a drive source such as a motor (not shown) provided in the end block 130. Further, a magnetic field (leakage magnetic field) is formed between the target 111 and the substrate P by the magnet unit 113 arranged inside the cathode 112.

In the film forming material discharging device 100 configured as described above, by applying a voltage above a certain level between the target 111 and the chamber 10 which is the anode, plasma is generated between them. Then, the cations in the plasma are attracted by the electric field and collide with the target 111, so that the particles of the target material are emitted from the target 111. The particles emitted from the target 111 repeatedly collide with each other, and the neutral atoms of the target substance among the emitted particles are deposited on the substrate P. As a result, a thin film formed by the constituent atoms of the target 111 is formed on the substrate P. Further, the leakage magnetic field can concentrate the plasma in a predetermined region between the target 111 and the substrate P. As a result, sputtering is efficiently performed, so that the deposition rate of the target substance on the substrate P can be improved. Further, in the film forming material discharging device 100 according to the present embodiment, the target 111 is configured to rotate during sputtering. As a result, the consumed area (erosion area due to erosion) of the target 111 is not concentrated on a part, and the utilization efficiency of the target 111 can be improved.

However, as described above, various devices can be applied to the film forming material discharging device in the present invention, and for example, a sputtering device provided with a flat plate-shaped target can also be applied.

<Beam irradiation device for etching>
As the etching beam irradiation device in the present invention, various devices capable of etching a part of the film formed on the substrate surface can be applied. Here, an example of the etching beam irradiation device 200 applicable to the film forming apparatus 1 according to the present embodiment will be described with reference to FIG.

The etching beam irradiation device 200 includes an ion source 210 and a high-voltage power supply 220 that applies a voltage to the ion source 210. The high voltage power supply 220 is configured to apply an anode voltage (up to several kV) to the ion source 210.

The ion source 210 includes a cathode 211, a beam irradiation surface 212, an anode 213, and a permanent magnet 214. In this embodiment, the cathode 211 also serves as the housing of the ion source 210. The cathode 211 and the anode 213 are each formed of SUS, and both are electrically isolated. The cathode 211 is electrically grounded by being fixed to the chamber 10. On the other hand, the anode 213 is connected to the high voltage power supply 220. In this configuration, when a high voltage is applied from the high voltage power supply 220 to the anode 213, an ion beam is emitted from an emission opening provided in the beam irradiation surface 212 of the housing (cathode 211). As the principle of the ion source 210, there are a type in which gas is introduced from the back side of the housing to generate ions inside the housing and a type in which the atmospheric gas existing on the outside of the housing is ionized. Either may be used. In this embodiment, the latter is adopted, and gas is supplied into the chamber 10 by opening the gas supply valve 30. As the gas, argon gas, oxygen gas, nitrogen gas and the like can be used.

The ion source 210 according to this embodiment has a beam irradiation surface 212 having an elongated shape (line shape or track shape) so that the emission opening has a longitudinal direction and a lateral direction. Then, the ion source 210 so that the longitudinal direction of the exit opening intersects the longitudinal direction of the substrate P.
Is placed. By using such a vertically long ion source 210, the ion beam is irradiated to the entire width direction of the substrate P. Therefore, it is possible to irradiate the entire surface of the substrate P with a beam by one beam scanning along the transport direction, and it is possible to increase the speed of surface treatment (improve productivity).

In this embodiment, the case where the etching beam is an ion beam has been described. However, the etching beam is not limited to the ion beam, and a laser beam can also be used. For example, when the material of the film to be etched is an inorganic film (SiN, etc.), an oxide film (SiO2, ITO, etc.), or a metal film (Al, Cu, etc.), an ion beam (Ar, Xe, etc.) It is preferable to use an ion beam (ion beam generated by a rare gas). On the other hand, when the material of the film to be etched is an organic film (organic compound or the like), it is preferable to use a laser beam. In the former case, the beam diameter is relatively large, whereas in the latter case, the beam diameter is relatively small. Further, in the latter case, it is more effective if the photothermal conversion material is contained in the film or in the underlying layer.

<Manufacturing equipment for electronic devices>
An electronic device manufacturing apparatus and an electronic device manufactured by the electronic device manufacturing apparatus will be described with reference to FIG. 7. The film forming apparatus 1 described above can be used as a manufacturing apparatus for manufacturing an electronic device. That is, the film forming apparatus 1 is placed on the substrate P (including those in which a laminate is formed on the surface of the substrate P) in the manufacture of various electronic devices such as semiconductor devices, magnetic devices, and electronic components, and optical components. It can be used to deposit and form thin films (organic films, metal films, metal oxide films, etc.). More specifically, the film forming apparatus 1 is preferably used in the manufacture of electronic devices such as light emitting elements, photoelectric conversion elements, and touch panels. Above all, the film forming apparatus 1 according to the present embodiment is particularly preferably applicable in the production of an organic light emitting element such as an organic EL (Electroluminescence) element and an organic photoelectric conversion element such as an organic thin film solar cell. The electronic device in the present invention also includes a display device (for example, an organic EL display device) and a lighting device (for example, an organic EL lighting device) equipped with a light emitting element, and a sensor (for example, an organic CMOS image sensor) equipped with a photoelectric conversion element. It's a waste.

FIG. 7 shows an example of an organic EL element manufactured by an electronic device manufacturing apparatus. The illustrated organic EL element is formed on the substrate P in the order of the anode F1, the hole injection layer F2, the hole transport layer F3, the organic light emitting layer F4, the electron transport layer F5, the electron injection layer F6, and the cathode F7. ing. The film forming apparatus 1 according to the present embodiment is particularly used when forming a laminated film such as a metal film or a metal oxide used for an electron injection layer or an electrode (cathode or anode) on an organic film by sputtering. It is preferably used. Further, the film formation is not limited to the organic film, and any combination of materials that can be formed by sputtering, such as a metal material and an oxide material, can be laminated on various surfaces.

<Superior points of the film forming apparatus and the electronic device manufacturing apparatus according to this embodiment>
According to the film forming apparatus 1 and the electronic device manufacturing apparatus using the film forming apparatus 1 according to the present embodiment, the film forming material discharging apparatus 100 and the etching beam irradiating apparatus 200 are conveyed while the substrate P is held. A film forming operation and an etching operation are performed, respectively. Therefore, the substrate P and the mask M do not move during the film forming operation, and these positional deviations can be suppressed. Therefore, the accuracy of the thin film formation position can be improved. Further, since the film forming operation and the etching operation are performed at the same time, the time required to form the thin film can be shortened, and the productivity can be improved.

(Example 2)
FIG. 8 shows Example 2 of the present invention. In this embodiment, a configuration in which the beam irradiation direction by the etching beam irradiation device is devised is shown. Since other configurations and operations are the same as those in the first embodiment, the same components are designated by the same reference numerals, and the description thereof will be omitted.

FIG. 8 is a main configuration diagram of the film forming apparatus according to the second embodiment of the present invention. In FIG. 8, among the configurations of the film forming apparatus according to the present embodiment, the atmospheric box 310, the film forming material discharging device 100 fixed to the atmospheric box 310, the etching beam irradiation device 200, and the atmospheric box 310 are moved. Only a part of the ball screw 331 for making the ball screw 331 and the substrate P and the mask M arranged in the chamber are shown. Since other configurations are as shown in the first embodiment, the description thereof will be omitted.

In this embodiment, the etching beam irradiation device 200 is provided so that the irradiation direction of the etching beam is inclined with respect to the perpendicular direction of the holding surface on which the substrate P is held. In the figure, the arrow D indicates the irradiation direction of the etching beam. As a result, the etching beam is applied to the outside of the region X facing the atmospheric box 310 with respect to the substrate P. Therefore, it is possible to prevent the particles generated during etching from adhering to the film forming material discharging device 100 and the etching beam irradiating device 200. Further, when the configuration of irradiating the etching beam in the vertical direction is adopted, a part of the etched material is likely to be reattached to the surface of the substrate P. On the other hand, by irradiating the etching beam so as to be inclined with respect to the perpendicular direction, reattachment can be suppressed, so that the etching efficiency can be improved. Needless to say, the film forming apparatus according to the present embodiment can also obtain the same effect as that of the first embodiment.

(Example 3)
FIG. 9 shows Example 3 of the present invention. In this embodiment, a configuration in which a pair of etching beam irradiation devices are provided is shown. Since other configurations and operations are the same as those in the first embodiment, the same components are designated by the same reference numerals, and the description thereof will be omitted.

FIG. 9 is a main configuration diagram of the film forming apparatus according to the third embodiment of the present invention. In FIG. 9, among the configurations of the film forming apparatus according to the present embodiment, the atmospheric box 310, the film forming material discharging device 100 fixed to the atmospheric box 310, the etching beam irradiation devices 200A and 200B, and the atmospheric box 310 are shown. Only a part of the ball screw 331 for moving the ball screw 331 and the substrate P and the mask M arranged in the chamber are shown. Since other configurations are as shown in the first embodiment, the description thereof will be omitted.

In the film forming apparatus according to the present embodiment, the etching beam irradiating devices 200A and 200B discharge the film forming material in the conveying direction of the film forming material discharging device 100 and the etching beam irradiating devices 200A and 200B by the conveying device. It is provided on both sides of the device 100, respectively. As a result, the film forming operation and the etching operation can be simultaneously performed on the substrate P regardless of whether it is the outward path or the return path. Therefore, productivity can be further increased. Needless to say, the film forming apparatus according to the present embodiment can also obtain the same effect as that of the first embodiment.

Further, also in this embodiment, as in the case of the second embodiment, the etching beam irradiation device is such that the irradiation direction of the etching beam is inclined with respect to the perpendicular direction of the holding surface on which the substrate P is held. It is also possible to adopt a configuration in which 200A and 200B are provided.

1 Film-forming device 10 Chamber 100 Film-forming material discharge device 200, 200A, 200B Etching beam irradiation device 300 Conveyor device 310 Atmospheric box 340 Atmospheric arm M mask P substrate

Claims (13)

With the chamber
A film-forming material discharging device provided in the chamber and performing a film-forming operation by discharging the film-forming material toward the surface of the substrate held in the chamber.
An etching beam irradiating device provided in the chamber and performing an etching operation by irradiating the surface of the substrate with an etching beam.
A transport device that transports the film-forming material discharge device and the etching beam irradiation device, and
Equipped with
While transporting the film-forming material discharging device and the etching beam irradiation device by the transport device, the film-forming operation by the film-forming material discharging device and the etching operation by the etching beam irradiation device are performed on the substrate. And
The etching beam irradiation device is a film forming apparatus provided on both sides of the film forming material discharging device with respect to the conveying direction of the conveying device. The film forming apparatus according to claim 1, wherein the film forming material discharging apparatus is a sputtering apparatus that performs sputtering. The film forming apparatus according to claim 2, wherein the sputtering apparatus includes a cylindrical target that rotates during sputtering. The film forming apparatus according to claim 3, wherein the cylindrical target extends in a direction intersecting the transport direction of the transport device. The etching beam irradiating device has an exit opening for emitting the etching beam.
The film forming apparatus according to any one of claims 1 to 4, wherein the emission opening extends in a direction intersecting the transport direction of the transport device. The film forming apparatus according to any one of claims 1 to 5, wherein the etching beam irradiated by the etching beam irradiating apparatus is an ion beam. The film forming apparatus according to claim 6, wherein the film to be etched is any of an inorganic film, an oxide film, and a metal film. The film forming apparatus according to any one of claims 1 to 5, wherein the etching beam irradiated by the etching beam irradiating apparatus is a laser beam. The film forming apparatus according to claim 8, wherein the film to be etched is an organic film. The film forming apparatus according to any one of claims 1 to 9, wherein the irradiation direction of the etching beam is inclined with respect to the perpendicular direction of the holding surface on which the substrate is held. The transport device transports the film forming material discharging device and the etching beam irradiating device while holding the film forming material discharging device and the etching beam irradiating device so as to reciprocate between the film forming material discharging device and the etching beam irradiating device.
While the film-forming material discharging device held by the transport device and the etching beam irradiating device are moving at least one of the outward and return paths of the reciprocating movement, the film-forming material is subjected to the substrate. The film forming apparatus according to any one of claims 1 to 10, wherein the film forming operation by the discharging device and the etching operation by the etching beam irradiating device are performed at the same time. The film forming apparatus according to claim 1 is provided.
An electronic device manufacturing apparatus characterized in that an organic film is formed on a substrate by the film forming apparatus. The film forming apparatus according to claim 1 is provided.
An apparatus for manufacturing an electronic device, characterized in that a metal film or a metal oxide film is formed on an organic film formed on a substrate by the film forming apparatus.

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