KR102660385B1 - Film forming method and film forming apparatus - Google Patents

Abstract

[Problem] To provide a film formation method and film formation apparatus that can suppress the generation of voids when forming a thin film on a substrate surface on which convexities and concave parts are formed.
[Solution] A film forming method for forming a film on a substrate (10) in which convex portions extending in a first direction and concave portions extending in the first direction are alternately formed along a second direction intersecting the first direction, comprising: A process of forming a thin film while transporting the substrate 10 in the second direction, and irradiating the substrate 10 with a first etching beam while transporting the substrate 10 on which the thin film is formed in the second direction. A first etching process of performing etching, and transporting the substrate 10 irradiated with the first etching beam in the second direction while performing a second etching process on the substrate 10 from an irradiation direction different from the first etching beam. It includes a second etching process in which etching is performed by irradiating an etching beam.

Description

Film forming method and film forming device {FILM FORMING METHOD AND FILM FORMING APPARATUS}

The present invention relates to a film forming method and film forming apparatus for forming a thin film on a substrate.

Conventionally, techniques for forming a thin film on a substrate by sputtering or the like are known. However, when irregularities are provided on the surface of the substrate, a hollow space called a void may be formed inside the thin film to be formed. This point will be explained with reference to FIG. 10. Figure 10 is a schematic cross-sectional view of a substrate on which a thin film is formed by a film forming method according to a conventional example.

On the surface of the illustrated substrate 710, a convex portion 711 and a concave portion 712 are provided. FIG. 10(a) shows the initial state during the film forming process. As shown in this figure, in the formed film 720a, the film formed on the upper surface of the convex part 711 is formed so that a part of it protrudes toward the concave part 712 and covers it. Therefore, if the film forming process is performed as is, a void V is formed above the concave portion 712. FIG. 10(b) shows a state in which film formation is performed until the upper surface of the thin film 720b becomes substantially flat. In this way, if a void V is formed, the desired function or quality may not be obtained.

Patent Document 1: Japanese Patent Publication No. 2015-529744 Patent Document 2: Japanese Patent Publication No. 2012-67394

An object of the present invention is to provide a film forming method and a film forming apparatus capable of suppressing the generation of voids when forming a thin film on a substrate surface on which convexities and concave parts are formed.

The present invention adopts the following means to solve the above problems.

That is, the film forming method of the present invention is,

A film forming method for forming a film on a substrate in which convex portions extending in a first direction and concave portions extending in the first direction are alternately formed along a second direction intersecting the first direction,

A process of forming a thin film while transporting the substrate in the second direction;

A first etching process in which etching is performed by irradiating the substrate with a first etching beam while transporting the substrate on which the thin film is formed in the second direction;

A second etching process in which etching is performed by irradiating the substrate with a second etching beam from a different irradiation direction than the first etching beam while transporting the substrate to which the first etching beam has been irradiated in the second direction. Includes.

According to the present invention, even if the film thickness of the film formed by the film formation process is different at each position, the thick film is shaved off and made thin by etching, and a part of the shaved material is attached to the thin film part and becomes thicker. Additionally, since the irradiation directions of the first etching beam and the second etching beam are different, the effect of flattening the film surface is obtained.

In addition, the film forming apparatus of the present invention,

A film forming apparatus for forming a film on a substrate in which convex portions extending in a first direction and concave portions extending in the first direction are alternately formed along a second direction intersecting the first direction,

With chamber,

a film-forming material irradiation device provided in the chamber and irradiating film-forming material toward the substrate;

a first etching device provided in the chamber and irradiating a first etching beam toward the substrate;

a second etching device provided in the chamber and irradiating a second etching beam in a different irradiation direction from the first etching beam;

A control device for controlling the film forming material irradiation device, the first etching device, and the second etching device is provided.

As described above, according to the present invention, the generation of voids can be suppressed when forming a thin film on the surface of a substrate on which convex portions and concave portions are formed.

1 is a schematic diagram of the internal structure of a film forming apparatus according to Embodiment 1 of the present invention.
Figure 2 is a flowchart showing the operation of the film forming apparatus according to Embodiment 1 of the present invention.
Figure 3 is an explanatory diagram of an etching operation in the film forming apparatus according to Embodiment 1 of the present invention.
Figure 4 is a schematic internal configuration diagram of a film forming apparatus according to Embodiment 1 of the present invention.
Figure 5 is an explanatory diagram of an ion source according to Embodiment 1 of the present invention.
Figure 6 is an explanatory diagram of a film forming method according to Embodiment 1 of the present invention.
7 is an explanatory diagram of a film forming method according to Embodiment 1 of the present invention.
Figure 8 is a schematic cross-sectional view of a substrate on which a thin film was formed by the film forming apparatus according to Embodiment 1 of the present invention.
Figure 9 is a schematic structural diagram of the inside of a film forming apparatus according to Embodiment 2 of the present invention.
Figure 10 is a schematic cross-sectional view of a substrate on which a thin film is formed by a film forming method according to a conventional example.

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. However, the following embodiments merely exemplify preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In addition, in the following description, the hardware configuration and software configuration of the device, processing flow, manufacturing conditions, dimensions, materials, shapes, etc. are intended to limit the scope of the present invention to these only, unless otherwise specified. It's not.

(Embodiment 1)

1 to 8, a film forming method and a film forming apparatus according to Embodiment 1 of the present invention will be described. 1 is a schematic internal configuration diagram of a film forming apparatus according to Embodiment 1 of the present invention, and shows the schematic configuration of the entire inside of the film forming apparatus when viewed from above. Figure 2 is a flowchart showing the operation of the film forming apparatus according to Embodiment 1 of the present invention. Figure 3 is an explanatory diagram of a nickname operation in the film forming apparatus according to Embodiment 1 of the present invention. FIG. 4 is a schematic internal configuration diagram of the film forming apparatus according to Embodiment 1 of the present invention, and shows the schematic configuration of the vicinity where the etching beam irradiation device is installed, viewed in the substrate transport direction. Figure 5 is an explanatory diagram of an ion source as an etching beam irradiation device according to Embodiment 1 of the present invention, (a) of the same figure is a front view showing the beam irradiation surface of the ion source, and (b) of the same figure is a front view showing the beam irradiation surface of the ion source. (a) of the figure is a cross-sectional view of AA, and (c) of the same figure is a graph showing the etching intensity in the longitudinal direction of the ion beam. 6 and 7 are explanatory diagrams of the film forming method according to Embodiment 1 of the present invention. Figure 8 is a schematic cross-sectional view of a substrate on which a thin film was formed by the film forming apparatus according to Embodiment 1 of the present invention.

<Overall configuration of the tabernacle device>

In particular, with reference to FIG. 1, the overall configuration of the film forming apparatus 1 according to this embodiment will be described. The film forming apparatus 1 includes a stocker chamber 100 in which the substrate 10 to be film formed is accommodated, an air pressure conversion chamber 200 that switches the room between an atmospheric state and a vacuum state, and various types of surfaces on the processing surface of the substrate 10. It is provided with a processing room 300 where processing is performed.

The stocker room 100 serves to accommodate a plurality of substrate transport devices 15 capable of transporting the substrate 10 while holding it. This stocker room 100 is equipped with a table 111 on which a plurality of substrate transfer devices 15 are mounted, and a drive mechanism that reciprocates the table 111. This drive mechanism is composed of a drive source 121 such as a motor that rotates the ball screw, and a guide rail 122 that regulates the moving direction of the table 111. However, the drive mechanism that reciprocates the platform 111 is not limited to this configuration, and various known technologies can be employed. Additionally, a plurality of guide rails 112 are installed on the table 111 to regulate the moving direction of the substrate transport device 15.

The atmospheric pressure conversion chamber 200 sends the substrate transfer device 15 brought in from the stocker room 100 in an atmospheric state to the processing chamber 300 in a vacuum state, at a stage before being sent to the processing chamber 300, It is responsible for converting the room from an atmospheric state to a vacuum state. Additionally, heaters 221 and 222 for heating the substrate 10 are installed in the air pressure conversion chamber 200 according to this embodiment. That is, depending on the material of the substrate 10, if the substrate 10 is transported to the processing chamber 300 at room temperature, various gases are generated from the substrate 10 and have a negative effect during film formation. Accordingly, by heating such a substrate 10 with the heaters 221 and 222, gas is forcibly generated at an early stage, and gas generation within the processing chamber 300 can be suppressed. Additionally, a guide rail 210 that regulates the moving direction of the substrate transport device 15 is also installed in the air pressure conversion chamber 200.

The processing chamber 300 includes a chamber 301 with a vacuum atmosphere inside, and a guide rail 302 that regulates the moving direction of the substrate transfer device 15. As for the mechanism for reciprocating the substrate transport device 15, various known technologies can be applied, so detailed description thereof is omitted, but a drive mechanism using a ball screw, a rack and pinion mechanism, etc. are applied. possible.

Inside the processing chamber 300, a preprocessing area 300a, a film forming area 300b, and an etching area 300c are provided. In the preprocessing area 300a, a substrate processing device 310 is installed to perform preprocessing such as cleaning the processing surface of the substrate 10 prior to film forming processing. Additionally, a sputtering device 320 as a film forming material irradiation device that performs a film forming process on the processing surface of the substrate 10 is installed in the film forming area 300b. Additionally, an etching beam irradiation device 330 that etches the film formed on the substrate 10 by the sputter device 320 is installed in the etching area 300c. On the other hand, the space installed in the front of the substrate processing device 310 in the preprocessing area 300a is a space where the substrate transport device 15 waits before performing preprocessing by the substrate processing device 310. The film forming apparatus 1 according to the present embodiment has a so-called in-line configuration that performs a series of processes on the substrate 10 while holding and transporting the substrate 10.

<Overall operation of the tabernacle device>

The film deposition device 1 includes a drive mechanism that reciprocates the platform 111, air pressure in the air pressure conversion chamber 200, heaters 221 and 222, air pressure in the processing chamber 300, a substrate processing device 310, and a sputter device. In addition to controlling the etching beam irradiation device 330 (320), a control device (C) is provided for controlling the transportation of the substrate 10 by the substrate transportation device 15. The following operations (film formation process, first etching process, second etching process, etc.) are performed by being controlled by this control device C. The control device C can be configured as a computer having, for example, a processor, memory, storage, I/O, etc. In this case, the function of the control device C is realized by the processor executing the program stored in the memory or storage. As a computer, a general-purpose computer may be used, an embedded computer, or a PLC (programmable logic controller) may be used. Alternatively, some or all of the functions of the control device C may be configured with a circuit such as ASIC or FPGA. Additionally, the control device C may be configured to transmit control commands through wiring connected to various devices to be controlled, etc., or may be configured to transmit control commands to various devices, etc. wirelessly. Below, with particular reference to FIG. 2, the overall operation of the film forming apparatus 1 will be described.

<<Preparation process>>

In the stocker room 100, a plurality of substrate transfer devices 15, each holding a substrate 10, are accommodated. Among them, the substrate transfer device 15 that holds the substrate 10 to be processed is transferred from the stocker room 100 to the air pressure conversion room 200 (step S101). In the atmospheric pressure conversion room 200, a pressure reduction operation is performed, and the room is converted from an atmospheric state to a vacuum state. Additionally, depending on the material of the substrate 10, heat treatment is performed simultaneously on the substrate 10 (step S102). For example, the substrate 10 is heated from 100°C to about 180°C by heat treatment for about 10 minutes. Thereafter, the substrate 10 is transported from the atmospheric pressure conversion chamber 200 to the preprocessing area 300a of the processing chamber 300 (step S103). In the pretreatment area 300a, surface treatment by ion beam irradiation is performed on the processing surface of the substrate 10 by the substrate processing apparatus 310 (step S104).

<<Film formation process>>

Next, the substrate 10 is transported to the film deposition area 300b (step S105), and sputtering is performed on the processing surface of the substrate 10 by the sputter device 320 (step S106). Since the sputtering device 320 is a known technology, its detailed description will be omitted, but it is provided with a target from which film-forming material is released by applying a high voltage. On the other hand, as for the target, a flat target may be adopted, or a cylindrical target configured to be rotatable may be adopted.

<<Etching process>>

The substrate 10 on which the film forming process has been performed is transported to the etching area 300c (step S107), and etching is performed by the etching beam irradiation device 330 (step S108).

After the etching process is performed, the control device C determines whether the number of sputterings ), and the film forming process and etching process are performed again. In this embodiment, the film forming process and the etching process are repeated a predetermined number of times N. In addition, the lower arrows T11, T21, T12, T22, ..., T1X, T2X in FIG. 1 indicate the movement process of the substrate 10 (substrate transport device 15). After the film forming process and the etching process are repeated N times, the processed substrate 10 is sent to the atmospheric pressure conversion chamber 200, converted from a vacuum state to an atmospheric state, and then transported to the stocker chamber 100.

On the other hand, in this embodiment, a configuration in which loading and unloading of the substrate transfer device 15 is performed in the stocker room 100 and the atmospheric pressure switching room 200 installed at one end of the processing chamber 300 is shown. However, only the loading operation of the substrate transfer device 15 is performed for the stocker chamber 100 and the air pressure conversion chamber 200 installed on one end of the processing chamber 300, and the substrate transfer device is installed on the other end of the processing chamber 300. A configuration in which an air pressure conversion chamber for carrying out the unloading of (15) and a stocker chamber for accommodating the processed substrate 10 may be adopted.

The film forming apparatus 1 according to this embodiment is applicable to, for example, various electrode formations involving pretreatment. Specific examples include, for example, the formation of a plating seed film suitable for FC-BGA (Flip-Chip Ball Grid Array) mounting substrate or a metal lamination film for SAW (Surface Acoustic Wave) devices. In addition, the conductive hard film in the bonding part of the LED, the film formation of the terminal film of the MLCC (Multi-Layered Ceramic Capacitor), etc. can also be mentioned. In addition, it can be applied to the formation of electronic shield films in electronic component packages and terminal film of chip resistors. The size of the substrate 10 is not particularly limited, but in this embodiment, the substrate 10 with a size of approximately 200 mm x 200 mm is used. Additionally, the material of the substrate 10 is arbitrary, and for example, substrates such as polyimide, glass, silicon, metal, and ceramic are used.

<Substrate processing device and etching beam irradiation device>

In particular, with reference to FIGS. 3 and 4 , the substrate processing apparatus 310 and the etching beam irradiation apparatus 330 will be described. The basic configuration of the substrate processing device 310 and the etching beam irradiation device 330 is the same. That is, these substrate processing devices 310 and the etching beam irradiation device 330 are devices for cleaning or etching the surface (processing surface) of a substrate by ion beam irradiation. In this way, since the basic configurations of both are the same, the etching beam irradiation device 330 will be described here.

The etching beam irradiation device 330 includes an ion source 331 and a high-voltage power supply 336 that applies a voltage to the ion source 331. Figure 4 also shows the ion beam 331a emitted from the ion source 331. Additionally, the etching beam irradiation device 330 according to the present embodiment is provided with a variable mechanism that changes the irradiation direction of the etching beam (ion beam 331a). More specifically, it is provided with a motor 337 that rotates the rotation shaft of the ion source 331 and a bearing 338 of the rotation shaft. However, the variable mechanism is not limited to this configuration, and various known technologies can be adopted. Additionally, in the case of the substrate processing apparatus 310, there is no need to install such a variable mechanism. Of course, depending on some technical reason, a variable mechanism that changes the irradiation direction of the ion beam may be installed in the substrate processing apparatus 310 as well.

The chamber 301 in the processing chamber 300 is an airtight container, and its interior is maintained in a vacuum state (or reduced pressure state) by the exhaust pump 303. By opening the gas supply valve 304 and supplying gas into the chamber 301, the gas atmosphere (or pressure zone) suitable for processing can be appropriately changed. The entire chamber 301 is electrically grounded. The substrate transfer device 15 holds the substrate 10 in a vertical position so that the processing surface of the substrate 10 follows the vertical direction, and moves on the guide rail 302 provided on the bottom of the chamber 301. It is designed to be portable. The guide rail 302 extends in a direction parallel to the surface of the substrate 10, and the substrate transport device 15 moves along a direction parallel to the surface of the substrate 10 by a drive mechanism (not shown).

The substrate transfer device 15 includes a holding member (substrate holder) 15a that holds the substrate 10, a support member (transfer carrier) 15b that supports the holding member 15a, and a holding member (substrate holder) 15b that holds the substrate 10. It is provided with a connecting member 15c that mechanically connects the member 15a and the support member 15b while electrically insulating it, and a rolling element 15d provided at the lower end of the support member 15b. As the rolling element 15d rolls over the guide rail 302, the substrate transport device 15 moves along the guide rail 302. Here, the surface on which the substrate 10 is held by the holding member 15a is called the holding surface F.

FIG. 3(a) shows the etching beam irradiation device 330 during a process (first etching process) in which an etching process is performed while the substrate transport device 15 moves in the direction of the arrows T11, T12, and T1X in FIG. 1. ) and the substrate transport device 15 are shown. In addition, FIG. 3(b) shows an etching beam irradiation device during a process (second etching process) in which an etching process is performed while the substrate transport device 15 moves in the direction of the arrows T21, T22, and T2X in FIG. 1 ( 330) and the substrate transport device 15 are shown. Meanwhile, the distance between the ion source 331 and the substrate 10 is set to about 100 to 200 mm. Additionally, the high-voltage power supply 336 is configured to apply an anode voltage (∼several kV) to the ion source 331.

<Ion Source>

In particular, with reference to FIG. 5, the ion source 331 will be described in more detail. The ion source 331 includes a cathode 332, a beam irradiation surface 333, an anode 334, and a permanent magnet 335. In this embodiment, the cathode 332 also serves as a case for the ion source 331. The cathode 332 and anode 334 are each made of SUS, and the two are electrically insulated. The cathode 332 is electrically grounded by being fixed to the chamber 301. Meanwhile, the anode 334 is connected to the high-voltage power supply 336. In this configuration, when a high voltage is applied to the anode 334 from the high-voltage power supply 336, an ion beam is emitted from an exit aperture provided on the beam irradiation surface 333 of the case (cathode 332). Additionally, the principle of the ion source 331 includes a type that introduces gas from the back side of the case and generates ions inside the case, and a type that ionizes the atmospheric gas existing outside the case, but either type may be used. . FIG. 4 shows the latter case, and gas is supplied into the chamber 301 by opening the gas supply valve 304. As the gas, argon gas, oxygen gas, nitrogen gas, etc. can be used.

The ion source 331 according to this embodiment has a beam irradiation surface 333 of a long and thin shape (line shape or track shape) of about 300 to 400 mm x about 70 mm so that the emission aperture has a long longitudinal direction and a short longitudinal direction. has. Then, the ion source 331 is arranged so that the longitudinal direction of the emission opening intersects the transport direction of the substrate 10. By using such a vertically long ion source 331, the ion beam is irradiated entirely in the longitudinal direction (direction perpendicular to the transport direction) of the substrate 10. Therefore, the beam can be irradiated to the entire surface of the substrate 10 with one beam scan along the transport direction, and surface treatment can be speeded up (improved productivity).

Meanwhile, FIG. 5(c) shows the etching intensity of the ion beam emitted from the ion source 331 in the longitudinal direction. As shown in the figure, the intensity of the longitudinal direction of the ion beam is not constant, and depending on the magnetic field design of the ion source 331, the intensity of the central portion becomes large as shown in the broken line (L2) or as shown in the solid line (L1). Similarly, one of the distributions is taken where the intensity in the central part becomes small. If there is a bias in the distribution of etching intensity as shown in Fig. 5(c), it is undesirable because unevenness in the etching amount occurs. Accordingly, by using the beam irradiation surface 333 whose size is approximately 1.5 to 2 times that of the substrate 10, the distribution of the etching intensity can be made uniform.

<Flow of surface treatment by substrate processing device>

According to the substrate processing apparatus 310 configured as described above, when the substrate 10 is transported to the preprocessing area 300a of the processing chamber 300, the control device C controls the high-voltage power supply and applies the ion source to the ion source. Start beam irradiation. In that state, the control device C moves the substrate transport device 15 at a constant speed and causes the substrate 10 to pass through the ion beam. By this method, an ion beam is irradiated to the surface of the substrate 10, and the surface side of the substrate 10 is subjected to surface treatment (cleaning treatment). By employing such a beam scanning configuration, the entire substrate can be processed with an ion beam with an irradiation range smaller than the area of the substrate 10, making it possible to miniaturize the ion source and, by extension, the entire device. In addition, by adopting a configuration in which the substrate 10 is supported in an attitude in which the processing surface of the substrate 10 follows the vertical direction and an ion beam is irradiated in a horizontal direction with respect to the processing surface, the particles chipped by etching are absorbed by gravity. Since it does not fall and remain on the processed surface of the substrate 10, there is also the advantage of preventing the occurrence of uneven processing due to residual particles.

<Film formation process and etching process>

In particular, with reference to FIGS. 6 and 7 , the film forming process and the etching process will be described in more detail. The film forming method and film forming apparatus according to the present embodiment can be suitably used when forming a thin film on the surface of a substrate 10 on which linear convex portions 11 and concave portions 12 are alternately formed on the surface side. there is. That is, in the film forming method and film forming apparatus according to the present embodiment, the convex portion 11 extending in the first direction and the concave portion 12 extending in the first direction extend in a second direction intersecting the first direction. Accordingly, it can be preferably used when forming a film on alternately formed substrates 10. In addition, the etching process according to this embodiment consists of a first etching process and a second etching process, as explained using FIG. 3. In the film forming method according to the present embodiment, the substrate 10 is transported in a direction (second direction) perpendicular to the direction (first direction) in which the convex portions 11 and the concave portions 12 extend. , film formation by the film formation process, etching by the first etching process, and etching by the second etching process are performed.

FIG. 6(a) schematically shows the substrate 10 being transported during these processes, and FIG. 6(b) shows the substrate 10 being transported during the film forming process. there is. Additionally, FIG. 7(a) shows the substrate 10 being transported during the first etching process, and FIG. 7(b) shows the substrate 10 being transported during the second etching process. It is showing. On the other hand, the substrate 10 in FIGS. 6(b) and 7 corresponds to the cross section along BB in FIG. 6. 6 and 7, the substrate transport device 15 is omitted, and only the substrate 10 transported by the substrate transport device 15 is shown. In the following description, the normal line of the holding surface F by the holding member 15a holding the conveyed substrate 10 is referred to as “normal line N” for convenience. In addition, the beam irradiated in the first etching process is called the “first etching beam,” and the beam irradiated in the second etching process is called the “second etching beam.”

The direction in which the film forming material is irradiated to the substrate 10 in the film forming process is configured to be parallel to the normal line N. In FIG. 6(b), it is shown that the irradiation direction d1 of the film forming material irradiated from the sputtering device 320 (target) toward the substrate 10 is parallel to the normal line N. As shown in FIG. 6(b), the film 20a formed by the first film formation process has a film thickness t1 of the film formed on the upper surface of the convex part 11 than the upper surface of the concave part 12. It is thicker than the film thickness t2 of the film formed on the upper surface of the convex part 11, and a part of the film formed on the upper surface of the convex part 11 protrudes toward the concave part 12 and covers it.

Then, the film formed through the film forming process is irradiated with the first etching beam to perform etching (see FIG. 7(a)). Thereafter, the film etched by the first etching beam is irradiated with a second etching beam at a different incident angle from that of the first etching beam, and etching is performed (see FIG. 7(b)). . Hereinafter, the first etching beam and the second etching beam will be described in more detail.

The irradiation direction of the first etching beam and the irradiation direction of the second etching beam are both perpendicular to the direction in which the convex portions 11 and concave portions 12 in the substrate 10 extend. Here, the irradiation portion irradiated by the first etching beam and the second etching beam includes a normal line N, and the convex portion 11 and the concave portion 12 in the substrate 10 extend. The surface parallel to the direction is assumed to be the boundary surface. Then, the first etching beam is irradiated from one of the two regions divided by this boundary, and the second etching beam is irradiated from the other of these two regions. For example, in FIG. 7, the portion indicated by the arrow S is the irradiated portion, and includes the irradiated portion S and the normal line N, and the convex portion 11 and The surface (boundary surface) parallel to the direction in which the concave portion 12 extends corresponds to the straight line T in the drawing. In this case, the first etching beam is irradiated from the area to the left of the figure rather than the straight line T corresponding to the boundary surface (see FIG. 7(a)), and the second etching beam is irradiated from the straight line T corresponding to the boundary surface. ), it can be seen that it is irradiated from the area on the right side of the drawing (see FIG. 7(b)). In addition, the angle (α) on the acute angle side among the angles at which the first etching beam and the normal line (N) intersect, and the acute angle side angle (β) among the angles at which the second etching beam and the normal line (N) intersect, All are set to 10° or more and 75° or less. On the other hand, in the case where both the cross-sectional shape of the convex portion 11 and the cross-sectional shape of the concave portion 12 are symmetrical with respect to the center (the center of the width in the conveyance direction of the substrate 10), α = β It is desirable to do so.

When an etching beam is irradiated to the film, the film is gradually shaved in the beam irradiation direction. Accordingly, the film 20a formed on the surface of the substrate 10 is cut off by the first etching beam, centered around the left side of the portion formed on the upper surface of the convex portion 11 in FIG. 7(a). Lose. The film 20b in FIG. 7(a) shows the state after the first etching process. Additionally, the dotted line L1 shown in the same figure indicates the position of the surface of the film 20a after the film forming process. On the other hand, part of the material shaved off by etching adheres to the film and becomes part of the film. At this time, especially because the etching beam tends to adhere to areas that are not irradiated, areas with thin film thickness tend to become thick due to the attached material.

By the second etching process performed after the first etching process, the film 20b is formed on the right side of the portion formed on the upper surface of the convex portion 11 in FIG. 7(b) by the second etching beam. It is cut around the surrounding area. The film 20c in FIG. 7(b) shows the state after the second etching process. In addition, the dotted line L2 shown in the figure indicates the position of the surface of the film 20b after the first etching process. In this process as well, as in the first etching process, part of the material shaved off by etching adheres to the film and becomes part of the film.

<What is superior about the film forming method and film forming device according to this embodiment>

According to the film formation method and film formation apparatus 1 according to the present embodiment, after film formation, etching is performed by the first etching process and the second etching process, so that the part where the film is thick is shaved off and the part where the film is thin is thickened, thereby forming the film. The process and etching process are performed repeatedly. As a result, the surface of the film becomes flat and even, and the overall film thickness gradually becomes thicker. Thereby, the generation of voids can be suppressed. Additionally, by setting the number of times (N) of repeating the film forming process and the etching process to a certain level or more, a film 20d having a flat upper surface can be formed, as shown in FIG. 8 .

And, since the incident angles of the first etching beam in the first etching process and the second etching beam in the second etching process are different, the deviation when the film is cut by etching can be suppressed. In particular, in the present embodiment, an irradiation portion irradiated by an etching beam and a normal line N are parallel to the direction in which the convex portions 11 and concave portions 12 of the substrate 10 extend. Assuming that the surface is an interface, the first etching beam is irradiated from one of the two regions divided through the interface, and the second etching beam is configured to be irradiated from the other of the two regions. . Thereby, variation when the film is chipped away by etching can be effectively suppressed.

Additionally, the etching beam irradiation device 330 according to the present embodiment is provided with a variable mechanism that changes the irradiation direction of the etching beam (ion beam 331a). As a result, the first etching beam and the second etching beam are irradiated by the common etching beam irradiation device 330. Therefore, only one etching beam irradiation device 330 needs to be provided.

(Embodiment 2)

In Figure 9, Embodiment 2 of the present invention is shown. In the above-mentioned Embodiment 1, the configuration in the case where the first etching beam and the second etching beam are irradiated by a common etching beam irradiation device was shown. On the other hand, in this embodiment, the configuration in the case where the first etching beam irradiation device for irradiating the first etching beam and the second etching beam irradiation device for irradiating the second etching beam are provided separately. Explain. Since the basic structure and operation are the same as those of Embodiment 1, the same components are given the same reference numerals and their descriptions are omitted.

Fig. 9 is a schematic internal configuration diagram of a film forming apparatus according to Embodiment 2 of the present invention, and shows a schematic configuration of the entire interior of the film forming apparatus when viewed from above. The film forming apparatus 1 according to the present embodiment also includes a stocker chamber 100, an air pressure conversion chamber 200, and a processing chamber 300, as in the case of the above-described embodiment 1. The configuration of the stocker chamber 100 and the air pressure conversion chamber 200 is the same as the configuration shown in Embodiment 1 above, so description thereof is omitted. And, within the processing chamber 300, a preprocessing area 300a, a film deposition area 300b, a first etching area 300c, and a second etching area 300d are provided. Regarding the configuration of the preprocessing area 300a and the substrate processing device 310 installed in the preprocessing area 300a, and the film forming area 300b and the sputtering device 320 installed in the film forming area 300b, the above embodiments Since it is the same as the configuration shown in 1, its description is omitted.

And, an etching beam irradiation device is installed in the first etching area 300c and the second etching area 300d, respectively. The etching shown in FIG. 7(a) described in Embodiment 1 is performed (first etching process) by the first etching beam irradiation device 340 installed in the first etching area 300c, and the etching is performed in the second etching area 300d. ), the etching shown in FIG. 7(b) described in Embodiment 1 is performed by the second etching beam irradiation device 350 installed (second etching process). In the case of this embodiment, the first etching process and the second etching process are performed while the substrate transport device 15 moves in the direction of the arrows T11, T12, and T1X in FIG. 9. On the other hand, when the substrate transport device 15 moves in the direction of arrows T21, T22, and T2X in FIG. 9, it is controlled by the control device C so that irradiation of the etching beam is not performed.

In the etching beam irradiation device according to this embodiment, as in the case of Embodiment 1 above, a configuration including a variable mechanism that changes the irradiation direction of the etching beam (ion beam) can be adopted. However, in the case of this embodiment, etching is performed in the first etching process and the second etching process using separate etching beam irradiation devices. Therefore, since the irradiation direction of the ion beam irradiated from these etching beam irradiation devices can be determined in advance, the etching beam irradiation device according to this embodiment, unlike the case of Embodiment 1, is provided with a variable mechanism. You do not have to do.

Regarding the overall operation of the film deposition apparatus (preparation process, film formation process, etching process), except that the method of moving the substrate transfer device 15 in the first etching process and the second etching process is different, it is basically the same. Since it is the same as Embodiment 1 above, its description is omitted. Additionally, since the configuration of the etching beam irradiation device is the same as that of Embodiment 1 above except that no variable mechanism is required, detailed description thereof will be omitted. In addition, the positional (direction) relationship between the substrate 10 and the first etching beam and the second etching beam in the first etching process and the second etching process is the same as that of Embodiment 1, That explanation is also omitted.

As described above, in the film forming method and film forming apparatus according to the present embodiment, the same effects as in the case of Embodiment 1 can be obtained. In addition, in the case of this embodiment, it is necessary to install an etching beam irradiation device in the first etching area 300c and the second etching area 300d, but it is not necessarily necessary to install a variable mechanism, so the device configuration can be simplified. Also, in this embodiment, only the loading operation of the substrate transfer device 15 is performed for the stocker chamber 100 and the atmospheric pressure conversion chamber 200 installed on one end of the processing chamber 300, and the processing chamber 300 A configuration in which an air pressure conversion chamber for unloading the substrate transport device 15 and a stocker chamber for accommodating the processed substrate 10 can be installed on the other end side may be adopted.

(etc)

In the above embodiment, the case where the first etching beam and the second etching beam are ion beams has been described. However, the etching beam is not limited to an ion beam, and a laser beam can also be used. For example, if the material of the film to be etched is an inorganic film (SiN, etc.), an oxide film (SiO2, ITO, etc.), or a metal film (Al, Cu, etc.), the material is etched by an ion beam (rare gas such as Ar, It is preferable to use an ion beam generated. On the other hand, when the material of the film to be etched is an organic film (organic compound, etc.), it is preferable to use a laser beam. In the former case, the beam diameter is relatively large, whereas in the latter case, the beam diameter is relatively small. In addition, in the latter case, it is more effective if the photothermal conversion material is contained in the film or in the base layer.

In addition, in the first embodiment, the etching beam irradiation device is provided with a variable mechanism that changes the irradiation direction of the etching beam, so that the first etching beam and the second etching beam are a common etching beam irradiation device. It shows the composition of the case investigated by . However, for example, by changing the direction of the substrate 10 by installing a mechanism for rotating the substrate 10 in the substrate transfer device, the first etching beam and the second etching beam are irradiated with a common etching beam. A configuration that is irradiated by a device may also be adopted. In addition, by installing a mechanism that varies the inclination of the substrate transport device itself, the direction of the substrate 10 is changed, so that the first etching beam and the second etching beam are irradiated by a common etching beam irradiation device. You can also adopt a configuration that works.

1: Tabernacle device
10: substrate
11: Convex portion
12: recess
15: Substrate transport device
15a: Retention member
15b: support member
15c: connection member
15d: rolling element
20a, 20b, 20c, 20d: membrane
100: Stocker Room
111: wit
112: Guide rail
121: Drive source
122: Guide rail
200: Atmospheric pressure conversion room
210: Guide rail
221, 222: heater
300: Processing room
300a: Preprocessing area
300b: Tabernacle area
300c: Etching area
301: Chamber
302: Guide rail
303: exhaust pump
304: Gas supply valve
310: substrate processing device
320: Sputter device
330: Beam irradiation device for etching
331: Ion source
331a: ion beam
331a: Beam for etching
332: cathode
333: Beam irradiation surface
334: anode
335: Permanent magnet
336: high voltage power
337: motor
338: bearing
340: Beam irradiation device for first etching
350: Beam irradiation device for second etching
C: Control unit
F: holding surface
N: normal

Claims (11)

delete delete delete delete delete delete delete delete A film forming apparatus for forming a film on a substrate in which convex portions extending in a first direction and concave portions extending in the first direction are alternately formed along a second direction intersecting the first direction,
With chamber,
a film-forming material irradiation device provided in the chamber and irradiating film-forming material toward the substrate conveyed in the second direction;
an etching device provided on a downstream side of the film-forming material irradiation device in the chamber to irradiate an etching beam toward the substrate on which the film-forming material is formed and transported in the second direction;
a substrate transport device for transporting the substrate;
a rotation mechanism that rotates the substrate to change the direction of the substrate outside the irradiation area of the etching beam by the etching device;
A control device is provided to control the film forming material irradiation device, the etching device, and the substrate transport device,
After the first etching beam is irradiated toward the substrate by the etching device, the direction of the substrate is changed by the rotation mechanism and transported by the substrate transport device, and the substrate is transferred by the etching device toward the substrate. A film forming device characterized in that the second etching beam is irradiated in a different irradiation direction from the first etching beam. According to clause 9,
In the chamber, an area provided with the film forming material irradiation device and an area provided with the etching device are installed separately, and the substrate is transferred to each area by the substrate transfer device. According to claim 9 or 10,
The film forming apparatus wherein the control device performs control to repeatedly operate each of the film forming material irradiation device and the etching device a preset number of times.