KR20230011443A - Film forming method and film forming apparatus - Google Patents

Abstract

Provided are a film forming method and a film forming apparatus, which are able to, when forming a thin film on a surface of a substrate with a convex unit and a concave unit, suppress the generation of a void. A convex unit extended in a first direction and a concave unit extended in the first direction are formed on a substrate (10) in turn in a second direction crossing the first direction. The film forming method is to form a film on the substrate (10), comprising: a step of returning the substrate (10) in the second direction and forming a thin film; a first etching step of returning the substrate (10) with the thin film in the second direction, and irradiating a first etching beam to the substrate (10), and performing the etching; and a second etching step of returning the substrate (10) to which the first etching beam is irradiated in the second direction, and irradiating a second etching beam to the substrate (10) from a different irradiation direction from that of the first etching beam, and performing the etching.

Description

Film formation method and film formation apparatus {FILM FORMING METHOD AND FILM FORMING APPARATUS}

The present invention relates to a film formation method and film formation apparatus for forming a thin film on a substrate.

BACKGROUND OF THE INVENTION Conventionally, a technique of forming a thin film on a substrate by sputtering or the like is known. However, when irregularities are provided on the substrate surface, hollow spaces called voids may be formed inside the thin film to be formed. This point will be described with reference to FIG. 10 . 10 is a schematic cross-sectional view of a substrate on which a thin film is formed by a conventional film forming method.

On the surface of the illustrated substrate 710, a convex portion 711 and a concave portion 712 are provided. Fig. 10(a) shows an initial state in the process in which the film forming process is performed. As shown in this figure, in the formed film 720a, a part of the film formed on the upper surface of the convex portion 711 protrudes toward the concave portion 712 side and is covered. Therefore, if the film forming process is performed as it is, a void V is formed above the concave portion 712 . Fig. 10(b) shows a state in the case where film formation is performed until the upper surface of the thin film 720b becomes substantially flat. When the voids V are formed in this way, desired functions and quality may not be obtained.

Patent Document 1: Japanese Patent Publication No. 2015-529744 Patent Document 2: Japanese Unexamined Patent Publication No. 2012-67394

An object of the present invention is to provide a film forming method and a film forming apparatus capable of suppressing generation of voids when forming a thin film on the surface of a substrate on which convex portions and concave portions are formed.

The present invention adopts the following means in order to solve the above problems.

That is, the film formation method of the present invention,

A film formation method in which convex portions extending in a first direction and concave portions extending in the first direction are alternately formed along a second direction intersecting the first direction to form a film, comprising:

forming a thin film while conveying the substrate in the second direction;

a first etching step of performing etching by irradiating a first etching beam onto the substrate while transporting the substrate on which the thin film is formed in the second direction;

A second etching step of performing etching by irradiating the substrate with a second etching beam from an irradiation direction different from that of the first etching beam while transporting the substrate irradiated with the first etching beam in the second direction. includes

According to the present invention, even if the film thickness of the film formed by the film formation step is different at each position, by etching, the film is thinned at the thick part, and a part of the scraped material adheres and becomes thick at the thin film part. Further, since the irradiation directions of the first etching beam and the second etching beam are different, an effect of flattening the film surface is obtained.

In addition, the film forming apparatus of the present invention,

A film forming apparatus for forming a film on a substrate on which convex portions extending in a first direction and concave portions extending in the first direction are alternately formed along a second direction intersecting the first direction,

chamber,

a film formation material irradiation device provided in the chamber and irradiating a film formation material toward the substrate;

A first etching device provided in the chamber and irradiating a first etching beam toward the substrate;

a second etching device provided in the chamber and irradiating a second etching beam in a direction different from that of the first etching beam;

and a control device for controlling the film formation material irradiation device, the first etching device, and the second etching device.

As described above, according to the present invention, generation of voids can be suppressed when a thin film is formed on the surface of a substrate on which convex and concave portions are formed.

1 is a schematic configuration diagram of the inside of a film forming apparatus according to Embodiment 1 of the present invention.
2 is a flowchart showing the operation of the film forming apparatus according to Embodiment 1 of the present invention.
3 is an explanatory diagram of an etching operation in the film forming apparatus according to Embodiment 1 of the present invention.
4 is a schematic internal configuration diagram of a film forming apparatus according to Embodiment 1 of the present invention.
5 is an explanatory diagram of an ion source according to Embodiment 1 of the present invention.
6 is an explanatory diagram of a film forming method according to Embodiment 1 of the present invention.
7 is an explanatory diagram of a film forming method according to Embodiment 1 of the present invention.
8 is a schematic cross-sectional view of a substrate on which a thin film is formed by the film forming apparatus according to Embodiment 1 of the present invention.
9 is a schematic configuration diagram of the inside of a film forming apparatus according to Embodiment 2 of the present invention.
10 is a schematic cross-sectional view of a substrate on which a thin film is formed by a conventional film forming method.

EMBODIMENT OF THE INVENTION Hereinafter, preferred embodiment of this invention is described, referring drawings. However, the following embodiments are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In the following description, the hardware configuration and software configuration of the device, processing flow, manufacturing conditions, dimensions, material, shape, etc. are intended to limit the scope of the present invention only to these unless otherwise specified. It is not.

(Embodiment 1)

Referring to Figs. 1 to 8, a film forming method and a film forming apparatus according to Embodiment 1 of the present invention will be described. 1 is a schematic internal configuration diagram of a film forming apparatus according to Embodiment 1 of the present invention, and shows a schematic configuration when the entire interior of the film forming apparatus is viewed from above. 2 is a flowchart showing the operation of the film forming apparatus according to Embodiment 1 of the present invention. 3 is an explanatory view of the nicking operation in the film forming apparatus according to Embodiment 1 of the present invention. Fig. 4 is a schematic internal configuration diagram of a film forming apparatus according to Embodiment 1 of the present invention, showing a schematic configuration of a vicinity where an etching beam irradiation device is installed, viewed from the substrate transport direction. 5 is an explanatory diagram of an ion source as a beam irradiation device for etching according to Embodiment 1 of the present invention, (a) of the same figure is a front view showing a beam irradiation surface of the ion source, and (b) of the same figure is the same. AA cross-sectional view in (a) of the figure, and (c) of the same figure is a graph showing the etching intensity of the ion beam in the longitudinal direction. 6 and 7 are explanatory diagrams of a film forming method according to Embodiment 1 of the present invention. 8 is a schematic cross-sectional view of a substrate on which a thin film is formed by the film forming apparatus according to Embodiment 1 of the present invention.

<Overall Configuration of Film Formation Equipment>

In particular, with reference to FIG. 1 , the overall configuration of the film forming apparatus 1 according to the present embodiment will be described. The film forming apparatus 1 includes a Stocker chamber 100 in which the substrate 10 to be subjected to the film forming process is accommodated, an atmospheric pressure switching chamber 200 for switching the room between a standby state and a vacuum state, and various types of substrates 10 processed on the processing surface. A processing chamber 300 for processing is provided.

The Stocker chamber 100 plays a role of accommodating a plurality of substrate transport devices 15 that can be transported while holding the substrates 10 therein. The Stocker chamber 100 includes a mounting table 111 on which a plurality of substrate conveying devices 15 are mounted, and a drive mechanism for reciprocating the mounting table 111. This drive mechanism is composed of a drive source 121 such as a motor that rotates the ball screw, a guide rail 122 that regulates the moving direction of the mounting table 111, and the like. However, the drive mechanism for reciprocating the mounting table 111 is not limited to this configuration, and various known technologies can be employed. In addition, a plurality of guide rails 112 regulating the moving direction of the substrate transport device 15 are installed on the mounting table 111 .

In the air pressure conversion chamber 200, in order to send the substrate conveying device 15 carried in from the Stocker chamber 100 in a standby state to the processing chamber 300 in a vacuum state, at a stage before being sent to the processing chamber 300, It is responsible for converting the room from an atmospheric state to a vacuum state. In addition, heaters 221 and 222 for heating the substrate 10 are installed in the atmospheric pressure conversion chamber 200 according to the present embodiment. That is, depending on the material of the substrate 10, when it is transported to the processing chamber 300 at room temperature, various gases are generated from the substrate 10, which adversely affects film formation. Accordingly, by heating the substrate 10 with the heaters 221 and 222 , gas is forcibly generated at an early stage, and generation of gas in the processing chamber 300 can be suppressed. In addition, a guide rail 210 for regulating the movement direction of the substrate transport device 15 is also installed in the atmospheric pressure conversion chamber 200 .

The processing chamber 300 includes a chamber 301 inside which a vacuum atmosphere is created, and a guide rail 302 that regulates the moving direction of the substrate transport device 15 . Regarding the mechanism for reciprocating the substrate conveying device 15, since various known technologies can be applied, detailed description thereof is omitted, but a driving mechanism by a ball screw, a rack and pinion mechanism, etc. are applied. It is possible.

In the processing chamber 300, a preprocessing area 300a, a film formation area 300b, and an etching area 300c are provided. In the pre-processing area 300a, a substrate processing apparatus 310 for performing pre-processing such as cleaning of the processing surface of the substrate 10 prior to the film formation process is installed. In the film formation area 300b, a sputtering device 320 as a film formation material irradiation device that performs a film formation process on the treated surface of the substrate 10 is installed. Further, an etching beam irradiation device 330 for etching a film formed on the substrate 10 by the sputtering device 320 is installed in the etching area 300c. On the other hand, the space provided in front of the substrate processing apparatus 310 of the preprocessing area 300a is a space in which the substrate transport apparatus 15 waits before preprocessing by the substrate processing apparatus 310 is performed. The film forming apparatus 1 according to the present embodiment has a so-called in-line structure in which a series of processes are performed on the substrate 10 while holding and transporting the substrate 10 .

<Overall Operation of Film Formation Device>

The film forming apparatus 1 includes a driving mechanism for reciprocating the mounting table 111, atmospheric pressure in the atmospheric pressure conversion chamber 200, heaters 221 and 222, atmospheric pressure in the processing chamber 300, a substrate processing apparatus 310, and a sputtering apparatus. 320 and the etching beam irradiation device 330, as well as a control device C for carrying out transport control of the substrate 10 by the substrate transport device 15. The following operations (film formation process, first etching process, second etching process, etc.) are executed by being controlled by this control device C. The control device C may be composed of, for example, a computer having a processor, memory, storage, I/O, and the like. In this case, the function of the control device C is realized when the processor executes a program stored in memory or storage. As the computer, a general-purpose computer may be used, or an embedded computer or PLC (programmable logic controller) may be used. Alternatively, some or all of the functions of the control device C may be constituted by circuits such as ASICs and FPGAs. In addition, the control device C may be configured to transmit control commands via wiring connected to various devices to be controlled, or may be configured to transmit control commands to various devices and the like wirelessly. Hereinafter, the overall operation of the film forming apparatus 1 will be described with reference to FIG. 2 .

<<Preparation Process>>

In the Stocker chamber 100, a plurality of substrate transport devices 15 each holding the substrate 10 are accommodated. Among them, the substrate conveying device 15 holding the substrate 10 to be processed is conveyed from the Stocker chamber 100 to the atmospheric pressure conversion chamber 200 (step S101). In the atmospheric pressure conversion chamber 200, a pressure reduction operation is performed, and the room is switched from a standby state to a vacuum state. Further, depending on the material of the substrate 10, the heat treatment to the substrate 10 is performed simultaneously (step S102). For example, the substrate 10 is heated from about 100° C. to about 180° C. by heat treatment for about 10 minutes. Thereafter, the substrate 10 is transported from the atmospheric pressure conversion chamber 200 to the preprocessing area 300a of the processing chamber 300 (step S103). In the pre-processing area 300a, surface treatment by ion beam irradiation is performed on the treated surface of the substrate 10 by the substrate processing apparatus 310 (step S104).

<<Film formation process>>

Next, the substrate 10 is conveyed to the film formation area 300b (step S105), and sputtering is performed on the treated surface of the substrate 10 by the sputtering apparatus 320 (step S106). As for the sputtering device 320, since it is a well-known technique, its detailed description is omitted. However, a target or the like from which a film forming material is released when a high voltage is applied is provided. On the other hand, as for the target, a plate-shaped target may be employed, or a cylindrical target configured to be rotatable may be employed.

<<Etching Process>>

The board|substrate 10 on which the film-forming process was performed is conveyed to the etching area 300c (step S107), and the etching process by the etching beam irradiation apparatus 330 is performed (step S108).

After the etching process is performed, it is determined by the control device C whether or not the number of times of sputtering X has reached N (step S109). ), and the film forming process and the etching process are performed again. In this embodiment, the film forming process and the etching process are repeatedly performed a predetermined number of times N. Further, downward arrows T11, T21, T12, T22, ..., T1X, T2X in Fig. 1 indicate moving steps of the substrate 10 (substrate transport device 15). After the film formation process and the etching process are repeated N times, the processed substrate 10 is sent to the air pressure conversion chamber 200, switched from a vacuum state to a standby state, and then carried out to the Stocker chamber 100.

On the other hand, in this embodiment, the case where the stocker chamber 100 and the atmospheric pressure conversion chamber 200 installed at one end side of the processing chamber 300 adopts the structure which carries in and carries out the substrate transport apparatus 15 is shown. However, for the Stocker chamber 100 and the atmospheric pressure conversion chamber 200 installed on one end side of the processing chamber 300, only the loading operation of the substrate transport device 15 is performed, and the substrate transport device is placed on the other end side of the processing chamber 300. It is also possible to employ a structure in which an air pressure conversion chamber for carrying out (15) and a Stocker chamber for accommodating the substrate 10 after processing are provided.

The film forming apparatus 1 according to the present embodiment can be applied to various types of electrode formation involving pretreatment, for example. As a specific example, the film formation of the plating seed film suitable for FC-BGA (Flip-Chip Ball Grid Array) mounted substrates, and the metal laminated film for SAW (Surface Acoustic Wave) devices is mentioned, for example. Moreover, the film formation of the conductive hard film in the bonding part of LED, the terminal part film of MLCC (Multi-Layered Ceramic Capacitor), etc. are mentioned. In addition, it is applicable also to the film formation of the electronic shield film in an electronic component package, and the terminal part film of a chip resistor. Although the size of the substrate 10 is not particularly limited, in this embodiment, a substrate 10 having a size of about 200 mm x 200 mm is used. In addition, the material of the board|substrate 10 is arbitrary, For example, the board|substrate of polyimide, glass, silicon, metal, ceramics, etc. is used.

<Substrate processing device and beam irradiation device for etching>

In particular, with reference to FIGS. 3 and 4 , the substrate processing apparatus 310 and the etching beam irradiation apparatus 330 will be described. The basic configuration of the substrate processing apparatus 310 and the etching beam irradiation apparatus 330 are the same. That is, the substrate processing device 310 and the etching beam irradiation device 330 are devices for cleaning or etching the surface (processed surface) of the substrate by ion beam irradiation. In this way, since the basic structure of both is the same, the etching beam irradiation device 330 will be described here.

The etching beam irradiation device 330 includes an ion source 331 and a high-voltage power supply 336 that applies a voltage to the ion source 331 . 4 also shows the ion beam 331a irradiated from the ion source 331. In addition, the etching beam irradiation device 330 according to the present embodiment includes a variable mechanism for varying the irradiation direction of the etching beam (ion beam 331a). More specifically, a motor 337 for rotating the rotating shaft of the ion source 331 and a bearing 338 for the rotating shaft are provided. However, the variable mechanism is not limited to this structure, and various known techniques can be employed. In addition, in the case of the substrate processing apparatus 310, it is not necessary to provide such a variable mechanism. Of course, depending on some technical reason, a variable mechanism for varying the irradiation direction of the ion beam may be provided in the substrate processing apparatus 310 as well.

The chamber 301 in the processing chamber 300 is an airtight container, and its interior is maintained in a vacuum state (or reduced pressure state) by the exhaust pump 303 . By opening the gas supply valve 304 and supplying gas into the chamber 301, a suitable gas atmosphere (or pressure zone) for processing can be appropriately changed. The entire chamber 301 is electrically grounded. The substrate transport device 15 moves the substrate 10 on a guide rail 302 provided on the bottom surface of the chamber 301 while holding the substrate 10 in a vertical position so that the processing surface of the substrate 10 follows the vertical direction. It is designed to be movable. The guide rail 302 extends in a direction parallel to the surface of the substrate 10, and the substrate transport device 15 moves along a direction parallel to the surface of the substrate 10 by a driving mechanism (not shown).

The substrate transport device 15 includes a holding member (substrate holder) 15a for holding a substrate 10, a supporting member (transport carrier) 15b for supporting the holding member 15a, and a holding member 15b. A connecting member 15c for electrically insulating and mechanically connecting the member 15a and the support member 15b, and a rolling element 15d provided at the lower end of the support member 15b are provided. When the rolling element 15d rolls on the guide rail 302 , the substrate transport device 15 moves along the guide rail 302 . Here, the surface holding the board|substrate 10 by the holding member 15a is called holding surface F.

FIG. 3( a ) shows a beam irradiation device 330 for etching during a process (first etching process) in which the substrate transfer device 15 moves in the direction of the arrows T11, T12 and T1X in FIG. ) and the state of the substrate conveying device 15 are shown. 3( b ) shows a beam irradiation device for etching during a process (second etching process) in which the substrate transfer device 15 moves in the direction of the arrows T21, T22, and T2X in FIG. 330) and the state of the substrate transport device 15 are shown. Meanwhile, the distance between the ion source 331 and the substrate 10 is set to about 100 to 200 mm. In addition, the high-voltage power source 336 is configured to apply an anode voltage (~several kV) to the ion source 331.

<Ion Source>

In particular, referring to FIG. 5 , the ion source 331 will be described in more detail. The ion source 331 includes a cathode 332 , a beam irradiation surface 333 , an anode 334 , and a permanent magnet 335 . In this embodiment, the cathode 332 also serves as the case of the ion source 331 . The cathode 332 and the anode 334 are each made of SUS, and both are electrically insulated. The cathode 332 is electrically grounded by being fixed to the chamber 301 . On the other hand, the anode 334 is connected to the high voltage power source 336. In this configuration, when a high voltage is applied from the high voltage power supply 336 to the anode 334, an ion beam is emitted from an exit opening provided in the beam irradiation surface 333 of the case (cathode 332). As for the principle of the ion source 331, there are a type in which gas is introduced from the rear side of the case and ions are generated inside the case, and a type in which atmospheric gas existing outside the case is ionized. Any of these may be used. . 4 shows the latter case, and gas is supplied into the chamber 301 by opening the gas supply valve 304 . As the gas, argon gas, oxygen gas, nitrogen gas or the like can be used.

The ion source 331 according to the present embodiment has a beam irradiation surface 333 having a long and thin shape (line shape or track shape) of about 300 to 400 mm × about 70 mm so that the emission aperture has a long longitudinal direction and a short longitudinal direction. has And, the ion source 331 is arranged so that the longitudinal direction of the emission opening crosses the transport direction of the substrate 10 . By using such a vertically long ion source 331, the ion beam is irradiated throughout the longitudinal direction of the substrate 10 (direction orthogonal to the transport direction). Accordingly, the entire surface of the substrate 10 can be irradiated with a beam in one beam scan along the transport direction, and the surface treatment can be speeded up (productivity improved).

On the other hand, Fig. 5(c) shows the etching intensity of the ion beam emitted from the ion source 331 in the longitudinal direction. As shown in the figure, the intensity of the ion beam in the longitudinal direction is not constant, and depending on the design of the magnetic field of the ion source 331, the intensity in the central part becomes large as shown by the broken line L2 or Take any one of the distributions in which the intensity of the central part is small. If there is a bias in the distribution of etching strength as shown in FIG. 5(c), it is not preferable because non-uniformity occurs in the etching amount. Therefore, by using the beam irradiation surface 333 of about 1.5 to 2 times the size of the substrate 10, the distribution of the etching intensity can be made uniform.

<Flow of surface treatment by the substrate processing device>

According to the substrate processing apparatus 310 configured as described above, when the substrate 10 is transported to the preprocessing area 300a of the processing chamber 300, the control device C controls the high-voltage power supply, and the ion source start beam irradiation. In that state, the control device C moves the substrate transport device 15 at a constant speed to pass the substrate 10 through the ion beam. By this method, the surface of the substrate 10 is irradiated with ion beams, and the surface side of the substrate 10 is subjected to surface treatment (cleaning treatment). By adopting such a configuration for performing beam scanning, the entire substrate can be processed with an ion beam in an irradiation range smaller than the area of the substrate 10, so that the size of the ion source and the overall size of the device can be reduced. In addition, by adopting a configuration in which the processing surface of the substrate 10 supports the substrate 10 in a vertical direction and irradiates ion beams in a horizontal direction with respect to the processing surface, the particles scraped by etching are removed by gravity. Since it falls and does not remain on the treated surface of the substrate 10, there is also an advantage that occurrence of non-uniformity in processing due to remaining particles can be prevented.

<Film Formation Process and Etching Process>

In particular, with reference to FIGS. 6 and 7, the film forming process and the etching process will be described in more detail. The film forming method and film forming apparatus according to the present embodiment can be suitably used when forming a thin film on the surface of a substrate 10 on which linear convex portions 11 and concave portions 12 are alternately formed on the surface side. there is. That is, in the film forming method and film forming apparatus according to the present embodiment, the convex portion 11 extending in the first direction and the concave portion 12 extending in the first direction form a second direction crossing the first direction. It can be preferably used when forming a film on the substrates 10 alternately formed according to the pattern. Further, the etching process according to the present embodiment is composed of a first etching process and a second etching process, as described with reference to FIG. 3 . In the film forming method according to the present embodiment, the substrate 10 is conveyed in a direction (second direction) perpendicular to the direction (first direction) in which the convex portions 11 and the concave portions 12 extend, while , film formation by the film formation process, etching by the first etching process, and etching by the second etching process are performed.

Fig. 6 (a) schematically shows how the substrate 10 is conveyed during these steps, and Fig. 6 (b) shows how the substrate 10 is conveyed during the film forming step. there is. Fig. 7(a) shows a state in which the substrate 10 is transported during the first etching step, and Fig. 7(b) shows a state in which the substrate 10 is transported during the second etching step. indicates On the other hand, the substrate 10 in Figs. 6(b) and 7 corresponds to the cross section BB in Fig. 6 . In FIGS. 6 and 7 , the substrate transport device 15 is omitted and only the state of the substrate 10 transported by the substrate transport device 15 is shown. In the following description, the normal line of the holding surface F by the holding member 15a holding the conveyed substrate 10 is referred to as "normal line N" for convenience. In addition, the beam irradiated in the 1st etching process is called "1st etching beam", and the beam irradiated in the 2nd etching process is called "2nd etching beam".

The direction in which the substrate 10 is irradiated with the film-forming material in the film-forming step is configured to be parallel to the normal line N. In FIG. 6( b ), it has been shown that the irradiation direction d1 and the normal line N of the film-forming material irradiated toward the substrate 10 from the sputtering device 320 (target) are parallel. In the film 20a formed in the first film forming step, as shown in FIG. 6(b), the film thickness t1 of the film formed on the upper surface of the convex portion 11 is the upper surface of the concave portion 12. It is thicker than the film thickness t2 of the film formed on the convex portion 11, and the film formed on the upper surface of the convex portion 11 is formed so that a part of the film protrudes toward the concave portion 12 side and covers it.

Then, the film formed in the film forming step is irradiated with the first etching beam to perform etching (see Fig. 7(a)). After that, the film after being etched by the first etching beam is irradiated with a second etching beam at an incident angle different from that of the first etching beam, and etching is performed (see FIG. 7(b)). . Hereinafter, the 1st etching beam and the 2nd etching beam are demonstrated in more detail.

Both the irradiation direction of the first etching beam and the irradiation direction of the second etching beam are perpendicular to the extending direction of the convex portion 11 and the concave portion 12 in the substrate 10 . Here, the convex portion 11 and the concave portion 12 in the substrate 10 extend, including irradiation portions irradiated by the first etching beam and the second etching beam, and the normal line N. A plane parallel to a direction is assumed to be a boundary plane. Then, the 1st etching beam is irradiated from one area|region of two areas divided by this interface, and the 2nd etching beam is irradiated from the other area|region of these two areas. For example, in FIG. 7 , a portion indicated by an arrow S is an irradiation portion, and includes the irradiation portion S and a normal line N, and furthermore, the convex portion 11 in the substrate 10 and A plane (boundary plane) parallel to the direction in which the concave portion 12 extends corresponds to a straight line T in the drawing. In this case, the first etching beam is irradiated from a region on the left side of the drawing from the straight line T corresponding to the boundary surface (see Fig. 7(a)), and the second etching beam is irradiated from the straight line T corresponding to the boundary surface ), it can be seen that it is irradiated from the right area in the drawing (see FIG. 7(b)). In addition, among the angles at which the first etching beam and the normal line N intersect, the angle α on the acute angle side and the angle β on the acute angle side among the angles at which the second etching beam and the normal line N intersect, All are set to 10° or more and 75° or less. On the other hand, when both the cross-sectional shape of the convex portion 11 and the cross-sectional shape of the concave portion 12 are symmetrical with respect to their center (center of width in the conveying direction of the substrate 10), α = β It is preferable to

When the film is irradiated with a beam for etching, the film is gradually scraped in the irradiation direction of the beam. Accordingly, the film 20a formed on the surface of the substrate 10 is scraped around the left side in the drawing of the portion formed on the upper surface of the convex portion 11 in FIG. 7(a) by the first etching beam, lose In Fig. 7(a), the film 20b shows the state after the first etching step. Also, a dotted line L1 shown in the same figure indicates the position of the surface of the film 20a after the film forming step. On the other hand, a part of the material scraped off by etching adheres to the film and becomes a part of the film. At this time, since the etching beam tends to adhere particularly to portions not irradiated, portions with a thin film thickness tend to become thicker due to the adhered material.

In the second etching process performed subsequent to the first etching process, the film 20b is formed on the right side of the drawing of the portion formed on the upper surface of the convex portion 11 in FIG. 7(b) by the second etching beam. It is cut around the vicinity. In Fig. 7(b), the film 20c shows the state after the second etching step. In addition, a dotted line L2 shown in the figure indicates the position of the surface of the film 20b after the first etching step. Also in this step, as in the case of the first etching step, a part of the material cut by etching adheres to the film and becomes a part of the film.

<Excellent points of the film forming method and film forming apparatus according to the present embodiment>

According to the film forming method and film forming apparatus 1 according to the present embodiment, after film formation, etching is performed by the first etching process and the second etching process, so that the thick film thickness portion is removed and the thin film thickness portion is thickened. The process and the etching process are repeatedly performed. As a result, the surface of the film becomes flat and even, and the film thickness of the entire film gradually increases. Thereby, generation|occurrence|production of a void can be suppressed. Further, by setting the number (N) of repeating the film formation process and the etching process to a certain level or more, as shown in FIG. 8 , a film 20d having a flat upper surface can be formed.

Further, the first etching beam in the first etching step and the second etching beam in the second etching step have different angles of incidence, so that variations in film cutting by etching can be suppressed. In particular, in the present embodiment, the irradiation portion irradiated with the etching beam and the normal line N are parallel to the direction in which the convex portion 11 and the concave portion 12 of the substrate 10 extend. Assuming that the surface is an interface, the first etching beam is irradiated from one of the two areas divided by the interface, and the second etching beam is irradiated from the other of the two areas. . In this way, it is possible to effectively suppress variations when the film is scraped by etching.

In addition, the etching beam irradiation device 330 according to the present embodiment includes a variable mechanism for varying the irradiation direction of the etching beam (ion beam 331a). Thereby, the 1st etching beam and the 2nd etching beam are irradiated by the common etching beam irradiation apparatus 330. Therefore, only one beam irradiation device 330 for etching needs to be provided.

(Embodiment 2)

9 shows Embodiment 2 of the present invention. In the first embodiment, the first etching beam and the second etching beam are irradiated with a common etching beam irradiation device. In contrast, in the present embodiment, a first etching beam irradiation device for irradiating a first etching beam and a second etching beam irradiation device for irradiating a second etching beam are provided separately. explain about Since the basic configuration and operation are the same as those in Embodiment 1, the same reference numerals are assigned to the same components, and descriptions thereof are omitted.

9 is a schematic internal configuration diagram of the film forming apparatus according to Embodiment 2 of the present invention, showing the schematic configuration when the entire interior of the film forming apparatus is viewed from above. The film forming apparatus 1 according to the present embodiment also includes a Stocker chamber 100, an air pressure conversion chamber 200, and a processing chamber 300 as in the case of the first embodiment. Since the configurations of the Stocker chamber 100 and the air pressure conversion chamber 200 are the same as those shown in the first embodiment, the description thereof is omitted. In the processing chamber 300, a preprocessing area 300a, a film formation area 300b, a first etching area 300c, and a second etching area 300d are provided. Regarding the configuration of the preprocessing area 300a and the substrate processing apparatus 310 installed in the preprocessing area 300a, and the sputtering apparatus 320 installed in the film formation area 300b and the film formation area 300b, the above embodiment Since it is the same as the configuration shown in 1, the description thereof is omitted.

In the first etching area 300c and the second etching area 300d, an etching beam irradiation device is installed, respectively. The etching shown in FIG. 7(a) described in Embodiment 1 is performed by the first etching beam irradiation device 340 provided in the first etching area 300c (first etching process), and the second etching area 300d ), the etching shown in FIG. 7(b) described in Embodiment 1 is performed by the second etching beam irradiation device 350 provided in (second etching step). In the case of the present embodiment, the first etching process and the second etching process are performed while the substrate conveying device 15 moves in the directions indicated by the arrows T11, T12, and T1X in FIG. 9 . On the other hand, when the substrate transport device 15 moves in the direction indicated by the arrows T21, T22 and T2X in Fig. 9, the control unit C controls so that the etching beam is not irradiated.

In the etching beam irradiation device according to the present embodiment, as in the case of the first embodiment, a configuration including a variable mechanism for varying the irradiation direction of the etching beam (ion beam) can be employed. However, in the case of the present embodiment, in the first etching process and the second etching process, etching is performed by separate etching beam irradiation devices. Therefore, unlike the case of Embodiment 1, the etching beam irradiation device according to the present embodiment is provided with a variable mechanism, because the irradiation direction of the ion beam irradiated from these etching beam irradiation devices can be determined in advance. You do not have to do.

Regarding the overall operation of the film formation apparatus (preparation process, film formation process, etching process), except for the difference in the method of moving the substrate transfer device 15 in the first etching process and the second etching process, basically, Since it is the same as the above Embodiment 1, the description is omitted. Also, the configuration of the etching beam irradiation device is the same as that of the first embodiment except that the variable mechanism is not required, so detailed description thereof is omitted. In addition, since the positional (direction) relationship between the substrate 10, the first etching beam, and the second etching beam in the first etching process and the second etching process is the same as in the case of the first embodiment, The explanation is also omitted.

As described above, in the film forming method and film forming apparatus according to the present embodiment, the same effects as in the case of the first embodiment can be obtained. In addition, in the case of the present embodiment, although it is necessary to provide a beam irradiation device for etching in the first etching area 300c and the second etching area 300d, respectively, it is not necessary to provide a variable mechanism, so the device configuration can be simplified. Also in this embodiment, only the loading operation of the substrate conveying device 15 is performed in the Stocker chamber 100 and the atmospheric pressure conversion chamber 200 installed on one end side of the processing chamber 300, and the It is also possible to employ a structure in which an air pressure conversion chamber for carrying out the substrate conveying device 15 and a Stocker chamber for accommodating the processed substrate 10 are provided on the other end side.

(Etc)

In the above embodiment, the case where the first etching beam and the second etching beam are ion beams has been described. However, the etching beam is not limited to an ion beam, and a laser beam can also be used. For example, when the material of the film to be etched is an inorganic film (SiN, etc.), an oxide film (SiO2, ITO, etc.), or a metal film (Al, Cu, etc.), an ion beam (Ar, Xe, etc.) generated ion beam) is preferred. In contrast, when the material of the film to be etched is an organic film (organic compound or the like), it is preferable to use a laser beam. In the case of the former, the beam diameter is relatively large, whereas in the case of the latter, the beam diameter is relatively small. Moreover, in the case of the latter, it is more effective if a photothermal conversion material is contained in the film|membrane or base layer.

Furthermore, in the first embodiment, the etching beam irradiation device includes a variable mechanism for varying the irradiation direction of the etching beam, so that the first etching beam and the second etching beam are common to the etching beam irradiation device. The configuration of the case investigated by was shown. However, by changing the direction of the substrate 10 by, for example, installing a mechanism for rotating the substrate 10 in the substrate transport device, the first etching beam and the second etching beam are irradiated with a common etching beam. A structure irradiated by the device may also be employed. In addition, by providing a mechanism for varying the inclination of the substrate transport device itself, by changing the direction of the substrate 10, the first etching beam and the second etching beam are irradiated by a common etching beam irradiation device. A configuration may be employed.

1: Tabernacle device
10: substrate
11: convex part
12: recess
15: substrate conveying device
15a: holding member
15b: support member
15c: connection member
15d: rolling element
20a, 20b, 20c, 20d: film
100: Stockersil
111: tactile table
112: guide rail
121: driving source
122: guide rail
200: air pressure conversion room
210: guide rail
221, 222: heater
300: processing room
300a: pre-processing area
300b: tabernacle area
300c: etching area
301: chamber
302: guide rail
303 exhaust pump
304: gas supply valve
310: substrate processing device
320: sputter device
330: beam irradiation device for etching
331 ion source
331a: ion beam
331a: beam for etching
332 cathode
333: beam irradiation surface
334 anode
335: permanent magnet
336: high voltage power supply
337: motor
338: bearing
340: first etching beam irradiation device
350: beam irradiation device for second etching
C: control unit
F: holding surface
N: Normal

Claims (11)

A step of forming a thin film while conveying the substrate;
After the step of forming the thin film, a first etching step of performing etching by irradiating the substrate with a first etching beam while transporting the substrate on which the thin film is formed;
and a second etching step of performing etching by irradiating the substrate with a second etching beam from an irradiation direction different from that of the first etching beam while transporting the substrate irradiated with the first etching beam. . According to claim 1,
A film formation method characterized by forming a film on a substrate on which concave or convex portions are formed, or on a substrate on which concave or convex portions are formed. According to claim 1 or 2,
The film formation method characterized in that the first etching step and the second etching step are carried out in opposite directions in which the substrate is transported. According to claim 1,
At least one of a concave portion and a convex portion extending in a first direction is formed on the substrate,
The film forming method according to claim 1 , wherein both the irradiation direction of the first etching beam and the irradiation direction of the second etching beam are perpendicular to the first direction. According to claim 4,
a normal line of a holding surface by an irradiation portion irradiated by the first etching beam and the second etching beam and a holding member holding a conveyed substrate, and is parallel to the first direction; Assuming that one surface is the boundary surface,
The film formation method according to claim 1 , wherein the first etching beam is irradiated from one of two areas divided by the boundary surface, and the second etching beam is irradiated from the other area of the two areas. According to claim 5,
The angle of the acute angle among the angles of intersection of the first etching beam and the normal line, and the angle of the acute angle of the angles of intersection of the second etching beam and the normal line are both 10 ° or more and 75 ° or less, characterized in that tabernacle method. According to claim 5,
A film formation method characterized in that a direction in which the film formation material is irradiated onto the substrate in the step of forming the thin film is parallel to the normal line. According to claim 1 or 2
The film formation method according to claim 1 , wherein the first etching beam and the second etching beam are ion beams or laser beams. A film forming apparatus for forming a film on a substrate on which convex portions extending in a first direction and concave portions extending in the first direction are alternately formed along a second direction intersecting the first direction,
chamber,
a film formation material irradiation device provided in the chamber and irradiating a film formation material toward the substrate conveyed in the second direction;
an etching device provided downstream of the film-forming material irradiation device in the chamber and irradiating a beam for etching toward the substrate on which the film-forming material is formed and conveyed in the second direction;
a substrate conveying device for conveying the substrate;
a rotating mechanism for rotating the substrate and changing the direction of the substrate outside an irradiation area of the etching beam by the etching device;
a control device for controlling the film formation material irradiation device, the etching device, and the substrate transport device;
After the first etching beam is irradiated toward the substrate by the etching device, the direction of the substrate is changed by the rotation mechanism and transported by the substrate conveying device, and the etching device moves toward the substrate by the etching device. A film forming apparatus characterized in that a second etching beam is irradiated in an irradiation direction different from that of the first etching beam. According to claim 9,
In the chamber, a region provided with the film formation material irradiation device and a region provided with the etching device are provided separately, and the substrate is transported to each region by the substrate transport device. The method of claim 9 or 10,
The film formation apparatus characterized in that the control device performs control to repeatedly operate each of the film formation material irradiation device and the etching device a preset number of times.

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