JP2019533293A - Method and apparatus for treating the surface of a substrate using particle beams - Google Patents

Abstract

The present invention relates to a method and apparatus for treating the surface of a substrate using a particle beam. The method comprises the step of irradiating the surface (302) of the substrate (114), wherein a first region (308) of the surface (302) of the substrate (114) has a The surface (302) is treated with the particle beam (104) impinging on the surface (302) of the substrate (114) in the form of a non-pulse (306) and a second of the surface (302) of the substrate (114). In region (310), the surface (302) of the substrate (114) is treated with the particle beam (104) impinging on the surface (302) of the substrate (114) in the form of pulses (304). [Selection] Figure 3

Description

  The present invention relates to a method and apparatus for treating a surface of a substrate using a particle beam.

  In the industry, for example, there is a ridge on the surface of the device and the surface is treated on a coated semiconductor or other component surface when the surface deviates from an object, for example, an object surface having too much or too little material. Is used.

  Excess material can be removed using, for example, ion beam etching. In site selective ion beam etching, the ion beam is moved relative to the surface to be processed. The surface to be treated can be divided into a plurality of surface segments. During scanning, the ion beam always remains on one surface segment for a predetermined time.

  FIG. 4 shows a schematic cross-sectional view of a substrate 400 having a surface 406 that is treated to obtain a predetermined homogeneity and roughness 402 using an ion beam. In ion beam etching, material is removed from the treated surface 406 at each surface segment. The ion beam passes through the surface in so-called scans S1, S2, and S3 in a plurality of times, that is, in a plurality of irradiation passes, and removes material in each scan.

  Currently, ion beams with high temporal constancy of current density distribution are used for surface modification purposes throughout the entire processing period in order to achieve specific precise local substrate removal or substrate deposition.

  During each scan, this may be the minimum amount of material, also referred to as reference etch 408. The reference etch 406 depends on the beam profile of the ion beam, the ion energy, the technical maximum possible moving speed, and the line supply. The amount of material that can be removed per scan is limited to a maximum value 404 due to thermal stress on the substrate. During each scan, for example, a material layer having a thickness in the range of 5 nm to 30 nm can be removed by ion irradiation. Thus, the substrate is scanned multiple times to achieve greater removal.

  However, as a result of the reference etch, material is unnecessarily removed over the entire surface of the component being processed, which unnecessarily takes processing time and reduces the homogeneity of the target plane 402.

  Alternatively, an electrically switched ion beam is used that is adapted to suit the respective surface segment pulse duration. These areas of the substrate intended for smaller changes are treated with an ion beam with a shorter residence time and at the same time a shorter pulse duration, while those areas of the substrate intended for larger changes are correspondingly It is treated with an ion beam having a longer residence time and a longer duration. The total dwell time spent is divided equally between the multiple scans S1, S2, S3.

  However, each pulse results in a flashing (on / off switching) of the ion beam on the surface segment. Due to the blinking (on / off switching) process, the material removal has a temporal gradient profile. The gradient profile and the location where the switching process takes place may have time and / or spatial variation. The gradient profile causes systematic errors during ion beam etching. As a result, each irradiation period has a gradient profile from the blinking (on / off switching) of the ion beam, and the systematic errors in the individual periods are added up. This reduces the accuracy of ion beam processing.

  In various embodiments, an apparatus and method for treating a surface of a substrate using a particle beam is provided. This alleviates or even avoids at least some of the drawbacks described above.

  In various embodiments, a method for treating a surface of a substrate using a particle beam is provided. The method includes a step of irradiating the surface of the substrate with the particle beam. Upon irradiation, in the first region of the surface of the substrate, the surface of the substrate is treated with the particle beam impinging on the surface of the substrate in a non-pulsed manner. At the time of irradiation, at least a second region of the surface of the substrate, the surface of the substrate is treated with the particle beam impinging on the surface of the substrate in a pulsed manner.

  Pulsed and non-pulsed irradiation of the substrate surface can occur in the scanning process, i.e. the processing pass of the substrate surface.

  By combining non-pulse irradiation of the first pass and pulse irradiation of the second pass, the number of pulses required to treat the surface can be reduced or minimized.

  Thus, errors caused by pulse gradients during substrate processing can be reduced or minimized compared to pure pulse processing. Otherwise, the error of each pulse will be summed over all irradiation passes (scans). The error caused by the pulse gradient is caused, for example, by an invariant particle beam profile when switching the particle beam contact with the surface on and off.

  Compared to non-pulse surface treatment, i.e. continuous wave treatment, unnecessary or improper treatment of the surface can be avoided or reduced. As a result, the surface can be treated more accurately, and the surface roughness can be lower, or the surface can be more uniform or consistent with a given surface property.

  In another different embodiment, the method comprises the step of irradiating the surface of the substrate with the particle beam, wherein the surface of the substrate is treated with the particle beam upon irradiation in a first region of the surface. The surface of the substrate is treated with the particle beam impinging on the surface of the substrate, pulsed with a first duty cycle. In at least a second region of the surface of the substrate, the surface of the substrate is treated with the particle beam impinging on the surface of the substrate, pulsed at a second duty cycle different from the first duty cycle. .

  The duty cycle can also be referred to as pulse duty factor (pulse occupancy), scanning speed or duty cycle (duty ratio). In order to determine the duty cycle, the surface can be subdivided into a plurality of equally sized segments or regions that are treated, ie irradiated, with particle beams. To determine the duty cycle, further assume that multiple segments are processed with the same or constant energy density particle beam per segment. Thus, the duty cycle results from the ratio of the time of the turned on beam in the segment to the total dwell time of the beam in the segment. Thus, the duty cycle is related to the dwell time per region segment in various embodiments.

  The size of one segment, ie its edge length, arises from the beam profile of the particle beam, for example. This is, for example, the half-width and / or step size of the Gaussian beam, ie the smallest mechanical change of the particle beam on the surface of the substrate.

  Obviously, the duty factor is zero when the surface of the substrate is not treated. For non-pulse processing, the duty cycle is 1.0. In pulse processing, the duty cycle is greater than 0.0 and less than 1.0.

  For example, the first duty cycle may have a value in the range of 0.0 to 1.0. The second duty cycle may have a value greater than 0.0 and less than 1.0, for example.

  In various embodiments, the method includes non-pulsed irradiation where the surface of the substrate is treated with a particle beam that is non-pulsed and impinges on the surface of the substrate.

  In various embodiments, pulsed and non-pulsed irradiations may overlap on a region or segment of the surface. Non-pulsed irradiation may be referred to as continuous wave irradiation. Pulsed irradiation may have a lower removal rate or separation rate at a constant energy density than non-pulsed irradiation, for example. This facilitates pulse width reduction and particle beam on / off operation (and associated less or less gradient particle beam control). As a result, the reliability of the surface treatment becomes higher.

  However, in various embodiments, the residence time per segment and the removal or separation rate between individual segments can be varied to achieve, for example, pulse amplitude modulation or pulse frequency modulation. The residence time per segment or per pulse is reduced or increased, for example, for non-pulse processing, for example at a constant energy density of the particle beam. As a result, the removal or separation rate can be changed and, without a doubt, the pulse amplitude can be increased or decreased. However, the pulsing removal or separation rate may be averaged over each region segment and may correspond to the non-pulsing removal or separation rate. As an example, the pulse treatment may include a surface treatment of the substrate with a long residence time and a relatively narrow pulse, i.e., a lower particle beam delivery rate. This supply speed is the progress of the particle beam in the scanning line for controlling the residence time in the surface region in the scanning line. Line supply is the delivery of particle beams from one scan line to the next. Line feed cannot have a direct influence on the residence time of the particle beam in a constant area of the surface.

  In one embodiment, the pulsed irradiation of the surface is performed by increasing or decreasing the pulse amplitude and with little or no pulse braking, i.e. by pulse amplitude modulation, for example based on non-pulsed irradiation of the same region of the surface. Is called.

  In one embodiment, the method further comprises determining the number of pulsed and non-pulsed treatments for each region of the surface to be treated. By clearly defining the processing of the substrate prior to the start of processing, the surface treatment can be optimized.

  In still other embodiments, determining the number of pulse treatments may include determining a pulse width, pulse amplitude, pulse shape, pulse position, and / or pulse distribution. For example, the duty cycle of the pulsing of the surface of the substrate with particle beams results from the amount of material that is removed or separated. This makes it possible, for example, to optimize the required number of pulses from which the pulse width, (gradient) shape and position can be determined, thus reducing the systematic error of the method.

  The pulse distribution can have, for example, the position of the pulse, for example with respect to one or more reference points. The reference point is, for example, the end or center of the area to be processed. The pulse distribution may be, for example, a mirrored distribution of pulses relative to the center of the region being processed.

  In yet another embodiment, the particle beam may impinge on the surface of the substrate in a pulsed manner such that the pulse is positioned in contrast to the center of the pulsed region. Thereby, the homogeneity of the surface of the area | region processed by a pulse form can be improved.

  In yet another embodiment, the method further comprises defining a reference plane that is above or below the surface in at least one region of the substrate. The substrate is pulsed in the region when the surface of the region has a predetermined relationship with the reference plane due to processing. The region may or may not be processed non-pulsed with particle beams in other cases.

  In other words, the reference plane may be defined above or below the surface in at least one region of the substrate. The substrate is pulsed in the region when the surface of the region has a predetermined relationship with the reference plane, and the region is otherwise non-pulsed or not processed.

  For example, the reference plane is a central plane formed by a rough processing method such as chemical mechanical polishing. Pulsed machine ablation irradiation can be performed, for example, when the surface of the surface segment is located below the reference plane. Non-pulse mechanical removal irradiation can be performed, for example, when the surface of the surface segment is placed on or near the reference plane. The surface is positioned in the vicinity of the reference surface, for example, when it does not reach the predetermined target plane using non-pulsed irradiation.

  The material is removed from the surface of the substrate in a non-pulsed manner, for example, in a region of the substrate. If the surface of this region is in the reference plane, the type of irradiation, i.e. mode, can be changed for this region, for example switching to pulsed material removal. This material may be removed, for example, in pulses in this region until, for example, the surface of this region is placed on a predetermined object plane. Thereafter, the treatment in this area can be non-irradiated. That is, the particle beam can be blocked from the scanning path on the surface of the substrate in this region. In other words, at least one region of the surface of the substrate is processed in various embodiments in pulses and non-pulses. Pulse processing and non-pulse processing can be performed simultaneously or at different timing, for example, in different scan passes. If the surface is located slightly above the reference plane, the pulse processing may have, for example, an overlap of pulse and non-pulse processing. Thus, various embodiments can reduce the number of scans and / or improve processing accuracy. The surface roughness or waviness of the substrate can be reduced after processing, for example.

  In yet another embodiment, the method further comprises determining the first duty cycle and the second duty cycle for each region of the surface to be treated.

  In yet another embodiment, after the non-pulsed irradiation is performed on one area of the surface, the pulsed irradiation is performed on the same area of the surface.

  In yet another embodiment, the non-pulsed irradiation is performed on the same region of the surface after the pulsed irradiation is performed on one region of the surface.

  In yet another embodiment, pulsed and non-pulsed irradiation is performed on a region of the surface after non-pulsed irradiation is performed on the entire surface of the substrate. Alternatively, after the pulsed and non-pulsed irradiation is performed on one area of the surface, the non-pulsed irradiation is performed on the entire surface of the substrate.

  In various embodiments, the particle beam is a neutral particle beam, an ion beam, a particle bundle beam, a neutral particle conglomerate (neutral particle cluster, so-called gas cluster) beam, an ionized particle conglomerate (so-called gas cluster) beam, or It is an electron beam. Neutral particles are understood, for example, as seemingly invariant particles, for example as a conglomerate of one of atoms, molecules or both. However, the neutral particles may include, for example, partial charges or dipoles. Ions or electrons are not neutral particles in this sense.

  In various embodiments, when the surface is treated with the particle beam, material may be removed from the surface of the substrate or a portion of the surface. This process may be, for example, ion beam etching.

  Alternatively or additionally, material is deposited on the surface of the substrate or a portion of the surface when processing the surface with the particle beam. This process may be, for example, magnetron sputtering. In magnetron sputtering, the electric and magnetic fields are superimposed at the irradiation source so that the electrons of the excitation plasma are deflected onto a coil path such as a spiral line or circle on the surface of the irradiation source's sputtering material. This increases the electron path length of the excitation gas and increases the number of collisions per charge carrier. The result is a very low pressure plasma, the so-called magnetron plasma. The positive charge carriers of the magnetron plasma are accelerated by a potential on the surface of the sputtering material, and neutral particles are emitted from the surface of the sputtering material through an impact treatment. These trigger neutral particles in turn form a particle flow, ie a neutral particle beam, in the direction of the substrate. In certain embodiments, the beam may be partially ionized.

  In various embodiments, the magnetron sputtering is high power impulse magnetron sputtering (HiPIMS).

  For example, a pulsar or circuit breaker is used for power adjustment. A particle beam with a higher degree of ionization can be achieved by magnetron sputtering through a pulsed discharge with a power higher than 1 MW. This results in a change in the properties of the growth layer, for example the higher adhesion strength of the growth layer.

  In one embodiment, the first region may be different from the second region. The second region may be different in time and / or space. The second region is disposed next to the first region, for example. Alternatively or in addition, the second region may be pulsed at a different timing than the first region, i.e. with a different illumination.

  In one embodiment, the method further comprises detecting a surface condition of at least a portion of the surface of the substrate. The surface condition can be detected, for example, before irradiation. Based on the surface condition, the reference plane, the object plane, the segment size of the surface, and the duty cycle of irradiation in individual irradiation paths (scans) per segment can be determined.

  Multiple scans per surface segment can be used to reduce the heat introduced into the substrate. This is because some of the heat is dissipated between scans via heat dissipation and heat radiation. As a result, the thermal stress in the first region can be reduced, thereby reducing the risk of substrate damage or avoiding other adverse thermal effects on the substrate.

  In yet another embodiment, the method further comprises determining an object plane that is above or below the surface of the substrate. The substrate is processed in at least one region of the surface of the substrate until it reaches the target plane.

  In yet another embodiment, the method further comprises irradiating the surface of the substrate. During the further irradiation step, for example, the particle beam is blocked in a region of the surface of the substrate that has reached the target plane, so that the surface is not treated by the particle beam in this region. The particle beam can be blocked, for example, by turning off the shutter and / or the particle beam.

  In yet another embodiment, the method comprises at least one other additional irradiation step. The first region of the surface of the non-pulsed substrate is processed during the further further irradiation step using the particle beam that impinges on the surface of the substrate in a pulsed manner. In other words, the previous non-pulsed region can be pulsed at another timing, for example during a later scan.

  In various embodiments, an apparatus for treating a surface of a substrate using a particle beam is provided. The apparatus has a particle beam source designed to treat the surface of the substrate with particle beams. The apparatus further includes beam source control means for controlling the particle beam. The beam source control means is configured to irradiate the surface of the substrate with the particle beam, and in the first region of the surface of the substrate, the surface of the substrate is non-pulsed and the substrate In the second region of the surface of the substrate, the surface of the substrate is treated with the particle beam pulsed onto the surface of the substrate.

  In various embodiments, an apparatus for treating a surface of a substrate using a particle beam is provided. The apparatus has a particle beam source designed to treat the surface of a substrate with particle beams. The apparatus further includes beam source control means for controlling the particle beam. The beam source control means is configured to irradiate the surface of the substrate with the particle beam, and in the first region of the surface of the substrate, the surface of the substrate is pulsed at a first duty cycle. Processed in the second region of the surface of the substrate, wherein the surface of the substrate is pulsed at a second duty cycle different from the first duty cycle. Processed by the particle beam impinging on the surface of the substrate.

  In one embodiment, the apparatus has a processing chamber. The irradiation source and at least a part of the substrate are arranged in the processing chamber, for example during irradiation.

  Embodiments of the present invention are illustrated in the drawings and will be described in more detail below.

  These drawings show the following:

It is a figure which shows the apparatus which concerns on various embodiment. It is a block diagram which shows the beam source control of the apparatus which concerns on various embodiment. FIG. 6 illustrates a method according to various exemplary embodiments. It is a figure which shows the process of the surface of a board | substrate.

  In the following detailed description, reference is made to the accompanying drawings. The accompanying drawings form part of the present specification and illustrate specific embodiments using the present invention. In this regard, for example, the terms “up”, “down”, “front”, “back”, “front”, “back, etc.” are used with respect to the orientation of the drawings to be described. Since it can be arranged in a plurality of different orientations, the wording of this direction is exemplary and is in no way limiting, other embodiments may be used and are structural without departing from the protection scope of the present invention. It goes without saying that logical changes may be made, and the features of the various exemplary embodiments described herein may be combined with each other, unless expressly specified otherwise. The detailed description of should not be construed in a limiting sense, and the scope of the present invention is defined by the appended claims.

  As used herein, the terms “coupled”, “connected”, and “coupled” refer to direct and indirect coupling, direct or indirect connection, and direct and Used to describe indirect linkage. In the drawings, the same or similar elements are appropriately given the same reference numerals.

  FIG. 1 is a diagram schematically showing the apparatus 100. Such an apparatus 100 is suitable, for example, for processing the surface of the substrate 114 using the particle beam 104.

  The apparatus 100 has a particle beam source 102 designed to emit a particle beam 104 that strikes a region of the surface of the substrate 114 in a region 106 (also referred to as a strike region).

  The particle beam source 102 is adapted to be suitable for treating the surface of a substrate with a particle beam, for example to remove material from the substrate or to separate material from the surface.

  In one embodiment, the irradiation source 102 is an ion beam source and the particle beam 140 is a focused ion beam having, for example, a Gaussian charge current distribution density. An ion beam is used in this example to remove the thin film from the substrate. The ion beam source may be configured as a wide ion beam source.

  The apparatus 100 further includes a beam source controller 112 that controls the particle beam 104. According to various embodiments, such a beam source controller 112 may modify, control, cancel and / or readjust particle beam parameters and characteristics automatically, manually, or in corresponding combinations. Good. This may be related to the position of the different components of the particle beam source 102 or the electrical operating current. Similarly, the beam source controller 112 relates to direct or indirect parameters of the particle beam 104, such as the characteristics of the beam neutralizer, the source gas composition and dose of the particle beam source, and / or the temperature of various components. You can do it.

  In addition, the beam source controller 112 may change the parameters of the particle beam source 102 and thus the particle beam 104. For example, the acceleration voltage that has an effect on the kinetic energy of charged particles of a particle beam can be changed. The beam source controller 112 may contain and control or adjust a gas source (not shown) to the particle beam source 102 or plasma excitation of the particle beam source 102 to control the particle number of the particle beam 104. . A gas supply may generally be necessary for the particle beam source to maintain the particle beam 140. Plasma excitation is generally required for particle beam sources operated with charged particles to generate charge carriers (eg, ions) required for charged or non-neutral particle beam 104 from a supplied gas.

  The beam source controller 112 includes a particle source 102 that irradiates the surface of the substrate 114. In the first region of the surface of the substrate 114, the surface of the substrate 114 hits the surface of the substrate 114 in a non-pulsed manner. In the second region of the surface of the substrate 114 that is processed by the particle beam 104, the surface of the substrate 114 is processed by the particle beam 104 that impinges on the surface of the substrate 114 in pulses.

  Alternatively or additionally, the irradiation beam source controller 112 may process the surface of the substrate 114 with a particle beam 104 impinging on the surface of the substrate 114 that is pulsed with a first duty cycle in a first region of the surface of the substrate 114. And in the second region of the surface of the substrate 114, the surface of the substrate 114 is processed by the particle beam 104 impinging on the surface of the substrate 114, pulsed at a second duty cycle different from the first duty cycle, Be placed.

  The beam source controller 112 further includes a particle beam source 102 for non-pulse irradiation of the surface of the substrate. In non-pulse irradiation, the surface of the substrate is non-pulsed by the particle beam 104 that hits the surface of the substrate 114. It is processed.

  In one embodiment, the apparatus 100 has a processing chamber 122. At least a portion of the irradiation source 102 and the substrate 114 are disposed in the processing chamber 122, for example, during irradiation. In other words, the apparatus 100 has a processing chamber 122 shown in a sectional view, in which a particle beam source 102 configured to emit a particle beam 104 is disposed.

  The particle beam source 102 may be a wall of the processing chamber 122 (movable or fixed), or a carriage in the processing chamber 122 (for example, the bottom of the door of the processing chamber 122, for example, the particle beam source 102 is provided and can move the particle beam source 102 ).

  The processing chamber 122 may further include a temperature controller that controls the temperature of the processing chamber walls and adjacent devices. In various embodiments, the temperature controller may be useful because the result of processing the substrate 114 by the particle beam 104 is temperature dependent. For example, an electrical connection to ground may be useful in various embodiments to offset electrical charging of the substrate 114 during processing with particle beams.

  The processing chamber 122 may further include a beam neutralizer that can offset the charging of the substrate 114 during processing with the particle beam. The substrate may be electrically connected to a reference potential, for example a ground potential, to prevent charging.

  The processing chamber 122 may include a suitable vacuum system that can regulate the pressure within the processing chamber 122 so that a vacuum can be created within the processing chamber 122 as desired.

  The position of the particle beam source 102 can be changed by a holder (not shown) and a beam source controller 112.

  The holder may be configured to allow linear movement in one, two or all three spatial directions and / or rotational movement about one, two or all three spatial axes. Alternatively or additionally, the substrate can be moved accordingly.

  The particle beam 104 may strike a strike region 106 on the surface of the substrate. Using the holder, the strike region 106 can be moved to any position or region on the surface of the substrate 114.

  In one embodiment, a method for processing a substrate 114 may include:

  The substrate 114 may be measured in advance, ie the surface condition, eg surface irregularities, may be determined by interferometry. The surface irregularity information may be stored in a memory of the detector 122 (for example, a processor such as a programmable processor and / or a hard wired logic) as an initial state of the substrate 114.

  The substrate 114 can be held in the processing chamber 122 that has been reduced to an appropriate processing pressure by a substrate holder and a vacuum system. The holder may be positioned such that when the particle beam source 102 is turned on, the particle beam 104 hits a shield, for example a diaphragm.

  Thereafter, the particle beam source 102 can be turned on using the beam source controller 112. In some embodiments, one can wait until the particle beam source 102 has a stable particle beam 104, ie, for example, until the particle beam 104 has only a small intensity variation.

  The strike region 106 of the particle beam 104 can be changed by the beam source controller 112 and the holder.

  Depending on the desired application, it may be advantageous for the substrate 114 to be in the focal plane of the particle beam 104. As a result, the strike region 106 is minimized in the spatial range, and thus the spatial resolution of the desired processing of the substrate 114 is maximized. Alternatively, the substrate 114 may be positioned off the focal plane. As a result, the heat output density can be reduced.

  By measuring the surface properties of the substrate 114, such as surface waviness, the particle beam 104 two-dimensional removal rate on the substrate 114 can be determined using, for example, interferometry and a comparison of previously determined data of the substrate 114. Can be determined. This two-dimensional removal rate may correspond to a Gaussian two-dimensional removal rate.

  The substrate 114 can then be attached to the substrate holder in the processing chamber 122, and the processing chamber 122 can be depressurized to an appropriate processing pressure using a vacuum system. As described above, the particle beam source 102 can then be operated with a stable particle beam 104.

  Thereafter, the two-dimensional distribution density function of the particle beam can be determined. As a result, the two-dimensional distribution density function with corresponding parameters is adapted to generate a two-dimensional correlation distribution density function that is a model of the two-dimensional removal rate of the strike region (so-called reference point) of the beam with sufficient accuracy. The The corresponding accuracy depends on the desired result for the processing substrate 114.

  Thereafter, calculations can be performed using the decision device 122. In this calculation, the two-dimensional correlation distribution density may be used to determine the motion profile of the particle beam 104 relative to the substrate 114. Alternatively, the motion profile may be generated, for example, using the two-dimensional removal rate of the reference point and stored in the memory of the beam source controller 112.

  This motion profile may include the position of the particle beam 104 on the substrate, the relative convection time, the duty cycle, and the pulse shape. Alternatively, the motion profile may include velocity data where the velocity describes the moving velocity of the particle beam 104 relative to the surface of the substrate 114.

  A motion profile may have one or more scan paths. In one scan pass, the particle beam source passes through each region of the surface. In this case, the pulsed, non-pulsed, or untreated particle beam (eg, by blocking the particle beam with a shield) can strike the surface of the substrate.

  The detector 122 may be electrically connected to the beam source controller 112 and / or a holder (not shown) so that a motion profile is performed. Thereafter, using the beam source controller 112 and the holder, the strike region 106 of the particle beam 104 can be directed across the surface of the substrate 114 in response to a motion profile corresponding to the processing of the surface of the substrate 114. The processed substrate 114 may then be removed from the processing chamber 122.

  The method implemented in the determination device 122 can, for example, calculate a motion profile such that the surface of the substrate has a desired pattern or a surface that is as flat as possible after processing.

  In order to perform locally different removals or locally different depositions, the substrate and / or particle beam is moved with a mechanical positioning system and / or the particle beam is pulsed, for example with different duty cycles.

  Due to the limited mechanical dynamics of the mechanical system, the minimum residence time per surface segment is typically at least a few milliseconds.

  By using a pulsed particle beam, the time-averaged beam intensity at one surface segment can be reduced. As a result, the minimum local residence time can be reduced.

  The motion profile is part of the method of treating the surface of the substrate 114 with the particle beam 104 in various exemplary embodiments.

  This method includes a step of irradiating the surface of the substrate 114 with the particle beam 104. At the time of irradiation, in the first region on the surface of the substrate, the surface of the substrate is treated with a particle beam that hits the surface of the substrate in a non-pulsed manner. In the second region of the substrate surface, the substrate surface is irradiated when irradiating the surface of the substrate with a pulsed particle beam.

  Alternatively or additionally, when irradiated in a first region of the substrate surface, the substrate surface is treated with a particle beam impinging on the substrate surface, pulsed at a first duty cycle. In the second region of the substrate surface, the substrate surface is treated with a particle beam impinging on the substrate surface, pulsed with a second duty cycle. The second duty cycle is different from the first duty cycle.

  The pulsed irradiation is performed, for example, after non-pulsed irradiation of the surface of the substrate and / or a region of the surface of the substrate. Alternatively, non-pulse irradiation of the surface of the substrate and / or part of the surface of the substrate is performed after the pulse irradiation.

  The particle beam is, for example, a neutral particle beam, a cluster beam, a cluster ion beam, an ion beam, or an electron beam. A method for treating the surface of the substrate is, for example, magnetron sputtering.

  When treating a surface with a particle beam, the material can be removed from the surface of the substrate and / or the material can be deposited on the surface of the substrate.

  The first region, i.e. the non-pulse processing region, may be different from the second region, i.e. the pulse processing region. The non-pulse processing region can be processed by pulsing in subsequent processing such as other scanning.

  All components of the device such as a current measuring device, holder or current probe can be adapted to suit a particular environment. For example, if the device is operated in a vacuum, the flow guide, grease and component materials may be adapted.

  Methods according to various embodiments are described in more detail with respect to FIG.

  FIG. 2 is a block diagram illustrating beam source control of an apparatus according to various exemplary embodiments. The beam source controller 112 has one or more ports 202 that connect or integrate the device into the external environment of the device, such as a security controller or remote monitor.

  The beam source controller 112 receives a processor 204, computer 204, or other computing device 204 (hereinafter referred to as a processing module computer PMC) that receives, evaluates and controls the individual signals of the components and modules of the device. May include.

  The PMC 204 may be a freely programmable processor (eg, a microprocessor or nanoprocessor), hardwired logic or firmware, or an application specific integrated circuit (ASIC) or a field programmable gate array (FPGA).

  Among other things, the central axis system 206 is connected to the PMC 204 and is connected to the particle beam circuit 208 and the accelerator circuit 210 by a switch circuit 212 to control the particle beam 104 of the beam source 102 and its beam profile.

  The particle beam switch circuit 208 and the accelerator circuit 210 may each have power supplies that are technically equal to each other.

  The switch circuit 212 may comprise an electrically switchable switch, such as a power transistor, between the irradiation source 102 and the particle beam circuit 208 and / or between the irradiation source 102 and the accelerator circuit 210. The switch circuit 212 may be configured such that the potential of the particle beam circuit 208 or the accelerator circuit 210 can be electrically connected to the irradiation source 102, or a ground potential or other potential can be applied to the irradiation source 102. . In this way, the particle beam can be easily pulsed and the position of the pulse on the surface and its energy can be easily adjusted.

  FIG. 3 is a diagram illustrating a method according to various exemplary embodiments.

  The motion profile described above may be a method 300 for treating the surface 302 of the substrate using the particle beam 104 in various embodiments.

  In the upper part of FIG. 3, a cross-sectional profile of the surface 302 of the substrate processed using the particle beam 104 is shown. The particle beam is driven or guided on the surface in a plurality of passes (scanning) S1, S2, S3.

  On the other hand, the material may be pulsed 310 from the surface of the substrate, ie, using particle beam pulses 304, or may be unpulsed 308 in continuous wave mode 306. Alternatively, the surface may remain untreated. For example, if the surface is not treated, the particle beam is off or blocked and no material is removed from the surface.

  In non-processing, the duty cycle is 0.0. For non-pulse processing, the duty cycle is 1.0. In pulse processing, the duty cycle is greater than 0.0 and less than 1.0.

  Below the cross-sectional profile are shown the local segment removal rate 332, the speed profile 334, and the different scans S1, S2, S3 for the cross-sectional profile, respectively. The removal rate 332 can be set to a constant energy distribution of the particle beam using the residence time per position. The residence time can be adjusted using, for example, the supply rate of the particle beam. Modulation of the absorbed dose can be achieved by local fluctuations in the feed rate and thus by the residence time. The change in feed rate and hence the residence time will be apparent from the particle beam velocity profile 334. The particle beam may be guided at a lower speed in the first region 336 than in the second region 338, for example.

  The sum of the material removed in the multiple scans S1, S2, S3 is (as will be described in more detail below) if the substrate surface 302 is positioned below the reference plane 320 (described in more detail below). ) Substantially corresponds to the material shown in the cross-sectional profile above the object plane 330.

  The surface to be treated can be illuminated at a maximum speed for segments having a surface substantially below the reference plane 320 and slower at the periphery of the edge (shown as diagram 334 for each scan). .

  The surface of the substrate exposed in each of the scans S1, S2, and S3 is caused by the particle beam 104 so that the maximum possible portion 318 of the material in one segment is, for example, the minimum removal time specific to the apparatus for each segment. And processed to be non-pulsed with dwell time. The remaining 314 is pulsed out in one scan using the minimum possible duty cycle. The duty cycle can be achieved with one pulse or with multiple pulses illuminated in contrast to the center of a segment.

  By combining non-pulse processing 308 and pulse processing 310, the number of pulses can be reduced or minimized. In this way, errors caused by pulse gradients during substrate processing can be reduced or minimized compared to pure pulse processing.

  Errors caused by the gradient and position of the pulse are mapped by a continuous particle beam profile, for example when switching the particle beam impinging on the surface on and off.

  Compared to non-pulse surface treatment, i.e. continuous wave treatment, unnecessary or improper treatment of the surface can be avoided or reduced. As a result, the surface can be treated more accurately, and the surface roughness can be lower, or the surface can be more uniform or consistent with a given surface property.

  The method includes, for example, detecting a surface state of at least a part of the surface of the substrate. Excess material or material deficiency can be determined, for example, starting from the surface 302 of the substrate for a given object plane 330. The object plane 330 is, for example, the layer thickness achieved and / or the homogeneity of the surface of the substrate.

  In other words, the method may include determining an object plane 330 that is above or below the surface 302 of the substrate. The substrate can be processed in at least one region of the surface of the substrate until it reaches the target plane.

  The surface 302 can be divided into a plurality of segments. The plurality of segments are, for example, flat and two-dimensional regions arranged on the surface of the substrate.

  The method may further include defining a reference plane 320 that is above or below the surface 302 in at least one region of the substrate. The substrate may be pulsed in multiple segments, for example, if the surface of each segment meets a predetermined condition with respect to the reference plane 320. In the method of removing material, for example, when the surface of each segment is located below the reference plane 320, pulse processing can be performed. A segment having a surface above the reference plane can be processed, for example, in a non-pulsed manner, which results in faster material removal.

  The reference plane 320 may be located below and / or above the surface 302 of the substrate segment.

  In various exemplary embodiments, the reference plane 320 is a plane obtained by roughing the surface of the substrate, for example, by (chemical) mechanical polishing.

  Alternatively or additionally, the reference plane 320 is a plane where only the feed rate is used to correct the dwell time until it is reached.

  For individual segments, the number of pulse treatments 310 and non-pulse treatments 308 may be determined to reach the target surface from the surface 302 before starting the irradiation of the particle beam 104.

  Determining the number of pulse treatments 308 may include, for example, determining a pulse width, pulse amplitude, pulse shape, and / or pulse distribution.

  The method includes, for example, determining a duty cycle for each region of the surface to be treated. By controlling the duty cycle, beam source power and current density variations caused by, for example, thermal drift can be compensated, for example, within a specified error range. To this end, the time averaged beam source emission current is a duty cycle and measurement variable adjusted to maintain the beam source emission current, and thus the time averaged ion current distribution, while maintaining other processing parameters. Can be used.

  The particle beam may, for example, impinge on the surface of the substrate in a pulsed manner such that the pulse is placed in contrast to the center, ie segment, of the pulsed region. The particle beam has, for example, a Gaussian beam profile. Thus, in contrast, a pulsed segment is more homogenous, for example, in connection with point object processing for the center of the segment and / or for asymmetric processing.

  The pulse processing includes, for example, a plurality of pulses 304 located at the end or between the end and the center of the segment.

  In various embodiments, the method includes a further irradiation step 312 of the surface of the substrate. During a further irradiation step 312, the particle beam 104 is blocked in a region of the surface of the substrate that has reached the target plane 330, for example using a shield or using the switch circuit of the beam source controller 112. Such blocking can prevent the surface of this region from being treated with particle beams. In other words, during further processing steps, the beam source, for example an ion source, can be turned off completely. That is, the duty cycle is 0.0. In this case, for example, the ion beam is directed from one position of the substrate to another, but this is done without coating or etching the surface segments.

  The simultaneous use of dwell time and pulse duration adapted as processing parameters can make the substrate or ion beam velocity more uniform and the overall process more reasonable, resulting in a positioning system configuration. This will extend the life of the parts.

Claims (20)

A method (300) of treating a surface (302) of a substrate (114) with a particle beam (104), the method (300) comprising the surface (302) of the substrate (114) with the particle beam. The process of irradiating
In the first region (308) of the surface (302) of the substrate (114), the surface (302) of the substrate (114) is non-pulsed (306) and the surface (302) of the substrate (114). ) To be processed by the particle beam (104) hitting
In at least a second region (310) of the surface (302) of the substrate (114), the surface (302) of the substrate (114) impinges on the surface (302) of the substrate (114) in a pulsed manner. Process (300), characterized by being processed by particle beam (104). A method (300) of treating a surface (302) of a substrate (114) with a particle beam (104), the method (300) comprising the surface (302) of the substrate (114) with the particle beam. The process of irradiating
In the first region (308) of the surface (302) of the substrate (114), the surface (302) of the substrate (114) is pulsed (304) with a first duty cycle. ) Treated by the particle beam (104) impinging on the surface (302) of
In at least a second region (310) of the surface (302) of the substrate (114), the surface (302) of the substrate (114) is pulsed with a second duty cycle different from the first duty cycle. The method (300), characterized by being processed by the particle beam (104).   The method (300) of claim 1 or 2, further comprising the step of determining the number of pulsed and non-pulsed treatments for each surface region to be treated.   4. The method (300) of claim 3, wherein determining the number of pulse treatments includes determining pulse width, pulse amplitude, pulse shape, pulse position, and / or pulse distribution.   The particle beam (104) impinges on the surface (302) of the substrate (114) in the form of a pulse (304) such that the pulse is placed in contrast around the center of the pulse (304) processing region. 5. A method (300) according to any one of the preceding claims, characterized in that it is characterized in that The method (300) further comprises defining a reference plane (320) that is above or below the surface (302) in at least one region of the substrate (114);
The substrate (114) is pulsed (304) in the region when the surface (302) of the region has a predetermined relationship with the reference plane (320);
6. The method (300) according to any one of the preceding claims, wherein the region is otherwise unpulsed or not processed.   The method (300) of claim 2, wherein the method (300) further comprises determining the first duty cycle and the second duty cycle for each region of the surface to be treated. ).   The method (300) according to any one of the preceding claims, wherein the pulsed irradiation is performed in the same region of the surface after the non-pulsed irradiation is performed in a region of the surface. ).   The method (300) according to any one of claims 1 to 7, wherein the non-pulsed irradiation is performed in the same region of the surface after the pulsed irradiation is performed in one region of the surface. ).   The method (300) according to any one of the preceding claims, wherein the particle beam (104) is a neutral particle beam, a particle bundle beam, an ion beam or an electron beam.   The material is removed from the surface (302) or part of the surface of the substrate (114) when processing the surface (302) with the particle beam (104). The method (300) of any one of 1 to 10.   A material is deposited on the surface (302) or part of the surface of the substrate (114) when processing the surface (302) with the particle beam (104). The method (300) of any one of 1 to 11.   13. A method (300) according to any one of the preceding claims, wherein the first region is different from the second region.   The method (300) according to any one of the preceding claims, wherein the method (300) comprises a step of detecting a surface condition of at least a part of the surface (302) of the substrate. .   The method (300) comprises determining an object plane that is above or below the surface (302) of the substrate, the substrate being in the substrate (114) until reaching the object plane. 15. The method (300) according to any one of claims 1 to 14, characterized in that it is treated in a region of the surface (302).   The method (300) includes the step of further irradiating the surface (302) of the substrate (114), wherein a region (302) of the surface (302) of the substrate (114) reaching the target plane ( In 312), the particle beam (104) is blocked in this region (312) such that the surface (302) is not treated by the particle beam (104). (300).   The method comprises at least one other additional irradiation step, wherein the first region of the surface of the non-pulsed substrate is pulsed onto the surface (302) of the substrate (114). 306) The method (300) according to any one of the preceding claims, characterized in that it is processed during said further further irradiation step using the particle beam (104) that has been converted. An apparatus for processing a surface (302) of a substrate (114) using a particle beam (104) comprising:
A particle beam source configured to treat the surface (302) of the substrate (114) with a particle beam (104);
Beam source control means (112) configured to control the particle beam (104) and configured to irradiate the surface (302) of the substrate (114) with the particle beam;
With
In the first region (308) of the surface (302) of the substrate (114), the surface (302) of the substrate (114) is non-pulsed (306) and the surface (302) of the substrate (114). ) To be processed by the particle beam (104) hitting
In the second region (310) of the surface (302) of the substrate (114), the surface (302) of the substrate (114) is pulsed (304) onto the surface (302) of the substrate (114). A device characterized in that it is processed by the particle beam (104). An apparatus for processing a surface (302) of a substrate (114) using a particle beam (104) comprising:
A particle beam source configured to treat the surface (302) of the substrate (114) with the particle beam (104);
Beam source control means (112) configured to control the particle beam (104) and configured to irradiate the surface (302) of the substrate (114) with the particle beam;
With
In the first region (308) of the surface (302) of the substrate (114), the surface (302) of the substrate (114) is pulsed (304) with a first duty cycle. ) Treated by the particle beam (104) impinging on the surface (302) of
In a second region (310) of the surface (302) of the substrate (114), the surface (302) of the substrate (114) is pulsed (304) at a second duty cycle different from the first duty cycle. Processed by the particle beam (104) striking the surface (302) of the substrate (114).   20. A process chamber (122) further comprising at least a portion of the irradiation source (102) and the substrate (114) disposed in the process chamber (122). The device described in 1.

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