KR101366042B1 - Ion processing apparatus using the position control of the ion beam source that contains the antenna of the pole type - Google Patents

Abstract

The present invention relates to an ion processing apparatus using position control of an ion beam source including a pole type antenna, and more particularly, to change an emission angle in a direction in which an ion beam emitted from an ion beam source is located in a vacuum chamber. Ion using a position control of an ion beam source including a pole type antenna capable of performing a deposition process of a workpiece while the sputter valence generated by the first collision of the ion beam with the emission angle is first collided with the workpiece. It relates to a processing device.
An ion processing apparatus using position control of an ion beam source including a pole type antenna according to the present invention generates a plasma by injecting a reaction gas into a plasma chamber having a pole type antenna, and extracts and accelerates an ion beam through the generated plasma. A workpiece fixing part for fixing and supporting the workpiece in the vacuum chamber, the workpiece for depositing the ion beam target for colliding the ion beam source and the ion beam emitted from the ion beam source, and the sputter atoms generated by collision with the ion beam target; It is technically significant to include an ion beam source driver provided on one side of the ion beam source to control the emission angle of the ion beam generated from the ion beam source to the ion beam target.

Description

Ion processing apparatus using the position control of the ion beam source that contains the antenna of the pole type}

The present invention relates to an ion processing apparatus using position control of an ion beam source including a pole type antenna, and more particularly, to change an emission angle in a direction in which an ion beam emitted from an ion beam source is located in a vacuum chamber. Ion using a position control of an ion beam source including a pole type antenna capable of performing a deposition process of a workpiece while the sputter valence generated by the first collision of the ion beam with the emission angle is first collided with the workpiece. It relates to a processing device.

Plasma is an ionized gas, which is composed of ions, electrons, excited atoms, molecules, and radicals that are very chemically active. Also called state. Since the plasma contains an ionized gas, the semiconductor may be accelerated or chemically reacted using an electric or magnetic field to produce a semiconductor such as etching, depositing, cleaning, and ashing the wafer. It is useful for the process.

There are a number of plasma sources for generating plasma. Capacitive Coupled Plasma (CCP) and Inductive Coupled PlasmaM ICP using Radio Frequency are representative examples.

Capacitively coupled plasma (CCP) sources have the advantages of high capacitive coupling control and ion control, resulting in higher process productivity compared to other plasma sources, and high density plasma because ion density can be easily increased with increasing radio frequency power. It is commonly used to obtain. However, such increase in radio frequency power increases ion bombardment energy, and consequently, there is a limit of radio frequency power in order to prevent damage caused by ion bombardment.

On the other hand, the inductively coupled plasma (ICP) source is a technology development is mainly made of a method using a radio frequency antenna (RF Antenna) and a method using a transformer (also referred to as transformer coupled plasma (Transformer Coupled Plasma)). In order to improve the characteristics of the plasma, and to increase the reproducibility and control ability by adding an electromagnet or a permanent magnet, or by adding a capacitive coupling electrode, technology is being developed.

In this case, a radio frequency antenna is generally used as a spiral type antenna or a pole type antenna. The radio frequency antenna is disposed outside the plasma reactor and transmits induced electromotive force into the plasma reactor through a dielectric window such as quartz. Inductively coupled plasma using a radio frequency antenna can obtain a high density plasma relatively easily, but the plasma uniformity is affected by the structural characteristics of the antenna. Therefore, the structure of the radio frequency antenna is improved to obtain a uniform high density plasma.

However, although the ion beam generated by using a conventional plasma has been used in the deposition process of a flat workpiece, when the workpiece is three-dimensional, that is, a three-dimensional workpiece, the efficiency of the deposition process using the ion beam generated by using a conventional plasma is inferior. A problem occurs.

Moreover, in the deposition process using the conventional ion beam source, it is difficult to impart various physical properties while performing ion treatment on the surface of the workpiece.

The present invention devised to solve the problems of the prior art as described above has an object to provide an ion beam source that can improve the plasma characteristics, such as plasma density, plasma uniformity, plasma potential.

In addition, the present invention does not need a direct or indirect bias to the object in order to ionize the workpiece, and thus to give a variety of physical properties by surface ion treatment of a flexible substrate such as PC, PET, Metal foil in a fixed frame There is another purpose.

In addition, another object of the present invention is to provide an ion beam source driver capable of rotating an ion beam source to change the emission angle of the ion beam emitted from the ion beam source.

In addition, the present invention to generate a sputter atom by first impinging the ion beam emitted from the ion beam source to the ion beam target in order to be able to impart a variety of physical properties to the surface of the workpiece, and then to make the sputter atoms secondary collision to the workpiece There is another purpose for it.

The object of the present invention is to generate a plasma by injecting a reaction gas into a plasma chamber having a pole-type antenna, and collides the ion beam source and the ion beam emitted from the ion beam source to extract and accelerate the ion beam through the generated plasma The ion beam target and the workpiece for depositing the sputter atoms generated by collision with the ion beam target, and the workpiece fixing portion for holding and supporting the workpiece in the vacuum chamber and the emission angle of the ion beam generated from the ion beam source It is achieved by an ion processing apparatus using position control of an ion beam source that includes a pole type antenna including an ion beam source driver provided on one side of the ion beam source to control toward the target.

The present invention devised to solve the problems of the prior art as described above has the effect of providing an ion beam source extraction apparatus that can improve the plasma characteristics, such as plasma density, plasma uniformity, plasma potential.

In addition, the present invention does not need a direct or indirect bias on the object in order to ionize the workpiece, and thus can be given a variety of physical properties by surface ion treatment of a flexible substrate, such as PC, PET, Metal foil in a fixed frame That has a different effect.

In addition, the present invention can change the emission angle of the ion beam emitted from the ion beam source by using the ion beam source driver included in the ion beam source, the impact angle of the ion beam emitted by the changed emission angle to the surface of the workpiece is changed According to the present invention, there is another effect for providing various physical properties to the surface of the workpiece.

In addition, the present invention is to first impinge the ion beam emitted from the ion beam source to the ion beam target to generate sputter atoms, and then to impart a variety of physical properties on the surface of the workpiece by secondary impact on the workpiece sputter atoms generated There is another effect.

1 is a block diagram illustrating an ion beam source using a pole type plasma generating antenna according to the present invention;
2 is a block diagram showing an ion beam emitted from an ion beam source according to the present invention,
3 is a configuration diagram for showing an ion beam emission angle change according to the present invention,
4 is a configuration diagram for illustrating a method of depositing ions on a planar workpiece according to an embodiment of the present invention;
5 is a block diagram showing a method of depositing ions in a three-dimensional workpiece according to another embodiment of the present invention,
6 is a block diagram showing a method of depositing ions in a three-dimensional workpiece using a plurality of ion beam sources according to another embodiment of the present invention,
7 is a configuration diagram illustrating an ion beam source driver according to the present invention.

The terms and words used in the present specification and claims should not be construed as limited to ordinary or dictionary terms and the inventor may appropriately define the concept of the term in order to best describe its invention It should be construed as meaning and concept consistent with the technical idea of the present invention.

Therefore, the embodiments described in this specification and the configurations shown in the drawings are merely the most preferred embodiments of the present invention and do not represent all the technical ideas of the present invention. Therefore, It is to be understood that equivalents and modifications are possible.

Hereinafter, preferred embodiments of the present invention will be described in detail.

1 is a block diagram illustrating an ion beam source using a pole type plasma generating antenna according to the present invention. As shown in FIG. 1, the ion beam source 100 includes a plasma chamber 110 which is a space for plasma generation, a reaction gas injection hole (not shown) for injecting reactive gas into the plasma chamber 110, and a sealed plasma chamber. A grid 140 for extracting and accelerating the ion beam 130 from the plasma generated by using the pole type antenna 120, the pole type antenna 120 is provided in one or more in the 110; It is configured to include.

The plasma chamber 110 is in a vacuum state, and an auxiliary vacuum device for maintaining the vacuum state may be added, and a cooling device may be added to solve the high temperature heat generated in the plasma chamber 110. At this time, the cooling device is preferably provided with any one or more of water-cooled or air-cooled.

The plasma chamber 110 is provided with a gas outlet (not shown) to allow at least one of oxygen or water vapor to flow in and out of the plasma chamber 110.

In addition, the plasma chamber 110 is provided with a reaction gas inlet (not shown) for generating a plasma, the reaction gas containing any one or more of an inert gas such as argon, nitrogen or oxygen and the like in the mixing ratio It is preferable to mix and match so that the reaction gas inlet may be provided more than one in order to distribute the partial pressure of reaction gas evenly.

The inner surface of the plasma chamber 110 may be provided with an inner wall using an insulating film coating or quartz, if necessary, the outer shape of the plasma chamber 110 may be formed in a variety of forms, such as a polygonal column, but is preferably formed in a cylindrical shape. .

In addition, an ion beam for emitting the ion beam 130 on the outer circumferential surface of the plasma chamber 110 so that the ion beam 130 generated in the plasma chamber 110 can be given to a certain direction to be emitted to the outside of the plasma chamber 110. At least one outlet 115 is provided.

The ion beam emitter 115 is formed as a gap at a predetermined interval of the cylindrical plasma chamber 110, and is formed in a straight line shape from the upper side to the lower side.

The grid 140 is connected to a power supply unit (not shown) to receive power, the power supply unit supplies high frequency (RF) or direct current (DC) power to the grid 140, and the grid 140 is supplied to the grid 140. High frequency (RF) power or direct current (DC) power is transmitted to the pole type antenna 120.

2 is a block diagram illustrating an ion beam emitted from an ion beam source according to the present invention. As shown in FIG. 2, the plasma chamber 110 constituting the ion beam source 100 is formed in a cylindrical shape, and an ion beam emitter for emitting the generated ion beam on the outer circumferential surface of the cylindrical plasma chamber 110 ( 115 is formed.

As shown in (a) of FIG. 2, the ion beam emitters 115 formed of a single ion beam 130 are emitted in one direction according to the position and direction of the ion beam source 100.

As shown in (b) of FIG. 2, the two ion beam emitters 115 may emit ion beams 130 in two directions depending on the position and direction of the ion beam source 100.

That is, one or more ion beam emitters 115 formed in the plasma chamber 110 may be formed, and a plurality of ion beam emitters 115 formed on the outer circumferential surface of the plasma chamber 110 having a cylindrical shape may correspond to each ion beam. The emission angle of the ion beam 130 is determined corresponding to the spacing of the emission holes 115.

3 is a configuration diagram for illustrating the change of the ion beam emission angle according to the present invention. As shown in FIG. 3, one ion beam outlet 115 is formed on an outer circumferential surface of the plasma chamber 110 constituting the ion beam source 100, and an ion beam emitted through one ion beam outlet 115 is formed. 130 may emit the ion beam 130 in one direction in which the ion beam emitter 115 is formed.

However, when the workpiece is a small plate, ion implantation or surface treatment of the workpiece may be performed using the ion beam 130 emitted in one direction. However, when the workpiece is a large plate or a three-dimensional workpiece 200, the workpiece may be oriented in one direction. Since ion implantation or surface treatment may not be performed smoothly with the emitted ion beam 130, the emission angle of the ion beam 130 may be changed by rotating the ion beam source 110 including the one ion beam emission port 115. You can change it.

That is, as shown in (a) of FIG. 3, the ion beam 130 emitted in one direction only collides with a part of the surface of the three-dimensional object 200. However, as shown in FIG. 3B, when the ion beam source 100 provided in the cylindrical shape is rotated to change the emission angle of the ion beam outlet 115, the ion beam 130 emitted is a three-dimensional workpiece. Since the collision efficiently occurs in the 200, ion implantation or surface treatment may be performed smoothly.

In addition, it is possible to control the degree of ion collision and the properties according to the ion beam 130 collides with the workpiece 200. On the other hand, in order to more efficiently perform ion implantation or surface treatment for the three-dimensional workpiece 200, it is preferable to rotate the three-dimensional workpiece 200.

4 is a configuration diagram for illustrating a method of depositing ions on a planar workpiece according to an embodiment of the present invention. As shown in FIG. 4, FIG. 4A shows one ion beam source 100 and FIG. 4B shows two ion beam sources 100.

In the ion beam source 100, the ion beam 130 generated through the ion beam emitter 115 of the plasma chamber 110 is emitted in one direction, but the ion beam 130 emitted in one direction collides with the ion beam target 300. While sputtering the ion beam target 300.

Subsequently, the sputter atom 135 emitted after the ion beam 130 collides with the ion beam target 300 is formed by the emission angle of the ion beam 130 emitted in one direction and the ion beam 130 of the ion beam target 300 where the ion beam 130 collides first. The sputter atoms 135 that are emitted toward the plate workpiece 250 in correspondence with the forming angle and are emitted by the primary collision with the ion beam target 300 impinge on the plate workpiece 250.

5 is a block diagram showing a method of depositing ions on a three-dimensional workpiece according to another embodiment of the present invention. As shown in FIG. 5, the ion beam 130 emitted at a predetermined emission angle through the ion beam discharge port 115 formed in the plasma chamber 110 of the ion beam source 100 collides first with the ion beam target 300. The sputter atoms 135 are sputtered by the ion beam target 300 to release the sputter atoms 135 from the ion beam target 300, and the emitted sputter atoms 135 collide with the three-dimensional workpiece 200 in a second collision with respect to the three-dimensional workpiece 200. Ion implantation or surface treatment can be performed.

At this time, the three-dimensional workpiece 200 may be rotated to efficiently perform the ion implantation or surface treatment performed by the sputter atom 135, the rotation of the three-dimensional workpiece 200 to combine the three-dimensional workpiece 200 Can be rotated using a drive included in the workpiece fixing portion (not shown).

6 is a block diagram illustrating a method of depositing ions on a three-dimensional workpiece using a plurality of ion beam sources according to another embodiment of the present invention. As shown in FIG. 6, each of the two ion beam sources 100 provided in the vacuum chamber 400 includes two ion beam outlets 115, and each of the two ion beam outlets 115 is generated. The ion beam 130 is emitted.

The emission angle of the emitted ion beam 130 is determined so that the ion beam source 100 is rotated to face the two ion beam targets 300, and the ion beam 130 emitted by the predetermined emission angle is 1 at the ion beam target 300. The sputter atoms, which are sequentially collided and emitted from the ion beam target 300 by the first collision, collide secondly with the three-dimensional workpiece 200 positioned between the respective ion beam targets 300.

7 is a configuration diagram illustrating an ion beam source driver according to the present invention. As shown in FIG. 7, in order to change the emission angle of the ion beam emission port 115 formed on the outer circumferential surface of the plasma chamber 110 provided in the ion beam source 100, an ion beam source provided on one side of the ion beam source 100. The driving units 510, 520, 525, and 530 are used.

The ion beam source driver 510, 520, 525, 530 is an ion beam source provided in the vacuum chamber 400 using any one or more of the gear method 510, the belt method 520, 525, or the motor method 530. The emission angle of 100 can be changed.

FIG. 7A illustrates an embodiment for changing the emission angle of the ion beam source 100 using the gear system 510, and FIG. 7B illustrates the belt system 520 and 525. An embodiment for changing the emission angle of the ion beam source 100 is shown. Meanwhile, the belt 530 for changing the emission angle of the ion beam source 100 in the belt systems 520 and 525 may be formed as a chain.

In addition, Figure 7 (c) shows an embodiment for changing the emission angle of the ion beam source 100 using the motor system 530, the motor used in the motor system 530 uses a servo motor It is preferable.

After changing the emission angle of the ion beam 130 emitted from the ion beam source 100 using any one or more of the methods shown in (a), (b) or (c) of FIG. A position sensor 600 for measuring may be provided in the ion beam source 100.

That is, the emission angle of the ion beam source 100 is changed using the ion beam source drivers 510, 520, 525, and 530, and the position sensor 600 provided in the ion beam source 100 is more precisely ion beam source 100. Measure the angle of release.

Subsequently, when a difference occurs between the emission angle measured by the position sensor 600 and the set emission angle, the ion beam source 100 using an actuator (not shown) included in the ion beam source drivers 510, 520, 525, and 530. It is preferable to fine tune the angle of release.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, Various changes and modifications will be possible.

100: ion beam source 110: plasma chamber
120: pole type antenna 130: ion beam
135 sputter atom 140 grid
200: solid workpiece 250: planar workpiece
300: ion beam target 400: vacuum chamber
510: gear 520: motor
530: belt or chain 600: position sensor

Claims (11)

An ion beam source for generating a plasma by injecting a reaction gas into a plasma chamber having a pole type antenna and extracting and accelerating an ion beam through the generated plasma;
An ion beam target for impinging the ion beam emitted from the ion beam source;
A workpiece for depositing sputter atoms generated by collision in the ion beam target;
A workpiece fixing portion for fixing and supporting the workpiece in a vacuum chamber; And
An ion beam source driver provided at one side of the ion beam source to control the emission angle of the ion beam generated from the ion beam source to the ion beam target.
Ion processing apparatus using the position control of the ion beam source including a pole type antenna comprising a.
The method of claim 1,
And an ion beam emitter for emitting the ion beam on an outer circumferential surface of the plasma chamber along a longitudinal direction of the plasma chamber.
delete The method of claim 1,
The ion beam source is an ion processing apparatus using position control of an ion beam source including a pole type antenna, characterized in that for applying the DC or RF power to the pole type antenna.
The method of claim 1,
And the ion beam source driver rotates the ion beam source to change an emission angle of the generated ion beam.

The method of claim 5, wherein
Position of the ion beam source including the pole type antenna, characterized in that the ion beam source driving unit comprises any one of a gear driving method, a belt driving method, a chain driving method or a motor driving method. Ion treatment device using control.
The method of claim 1,
And the ion beam source comprises a position sensor for measuring an emission angle of the ion beam source rotated by the ion beam source driver.
The method of claim 7, wherein
And the ion beam source driver comprises an actuator for correcting an emission angle of the ion beam source measured by the position sensor.

The method of claim 1,
The workpiece is an ion processing apparatus using position control of an ion beam source including a pole-type antenna, characterized in that any one of a flat plate or a three-dimensional form.
delete The method of claim 9,
When the workpiece is a three-dimensional shape, the ion processing device using the position control of the ion beam source including a pole type antenna, characterized in that the workpiece fixing unit includes a workpiece rotation drive to rotate the workpiece.

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