JP6567119B1 - Substrate processing apparatus, control method therefor, film forming apparatus, and electronic component manufacturing method - Google Patents

Substrate processing apparatus, control method therefor, film forming apparatus, and electronic component manufacturing method Download PDF

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JP6567119B1
JP6567119B1 JP2018060349A JP2018060349A JP6567119B1 JP 6567119 B1 JP6567119 B1 JP 6567119B1 JP 2018060349 A JP2018060349 A JP 2018060349A JP 2018060349 A JP2018060349 A JP 2018060349A JP 6567119 B1 JP6567119 B1 JP 6567119B1
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substrate
ion
ion source
ion beam
processing apparatus
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可子 阿部
可子 阿部
新 渡部
新 渡部
大和 阿部
大和 阿部
崇 竹見
崇 竹見
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Canon Tokki Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
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    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
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Abstract

【課題】基板の面に対する表面処理を効率的に行うことのできる技術を提供する。【解決手段】基板処理装置が、基板を支持する支持手段と、前記基板を間に挟むような位置関係で配置された第１のイオンソース及び第２のイオンソースと、前記支持手段により支持された１枚の基板又は前記支持手段によりそれぞれの処理面の反対面同士が対向して支持された２枚の基板と、前記第１及び第２のイオンソースとを、基板の面に沿った第１の方向に相対的に移動させながら、前記１枚の基板の両側の処理面又は前記２枚の基板のそれぞれの前記処理面に対し、前記第１及び第２のイオンソースからイオンビームを照射する制御を行う制御手段と、を有する。【選択図】図１A technique capable of efficiently performing a surface treatment on a surface of a substrate is provided. A substrate processing apparatus is supported by a supporting unit that supports a substrate, a first ion source and a second ion source that are arranged in a positional relationship with the substrate interposed therebetween, and the supporting unit. A single substrate or two substrates whose opposite surfaces are supported by the supporting means so as to face each other, and the first and second ion sources are arranged along the surface of the substrate. Irradiating an ion beam from the first and second ion sources to the processing surfaces on both sides of the one substrate or the processing surfaces of the two substrates while moving relatively in one direction. Control means for performing control. [Selection] Figure 1

Description

本発明は、基板処理装置及びその制御方法、成膜装置、電子部品の製造方法に関する。   The present invention relates to a substrate processing apparatus, a control method thereof, a film forming apparatus, and an electronic component manufacturing method.

半導体デバイスの成膜装置においては、成膜の前処理として、イオンビームによる基板表面の洗浄（異物の除去）やエッチングが行われることがある。従来、基板の両面に対しこのような前処理を行う場合には、特許文献１のように、チャンバ内に固定した基板の両側からイオンビームを照射する方法がとられていた。   2. Description of the Related Art In a semiconductor device deposition apparatus, substrate surface cleaning (removal of foreign matter) or etching with an ion beam may be performed as a pretreatment for deposition. Conventionally, when such pretreatment is performed on both surfaces of a substrate, a method of irradiating an ion beam from both sides of a substrate fixed in a chamber has been adopted as in Patent Document 1.

特開２００８−１１７７５３号公報JP 2008-117753 A

しかしながら、特許文献１に開示されている従来方法では、１枚の基板を処理するたびに基板の取り替えが必要となるため、作業が煩雑であるとともに、生産性が極めて悪い。また、基板の全面にイオンビームを照射しなければならないため、大サイズの基板を処理できないという制約（あるいは、イオンソースの大型化を招くという不利）がある。   However, the conventional method disclosed in Patent Document 1 requires a replacement of the substrate every time one substrate is processed, and thus the operation is complicated and the productivity is extremely poor. In addition, since the entire surface of the substrate must be irradiated with an ion beam, there is a limitation that a large-sized substrate cannot be processed (or a disadvantage that an ion source is increased in size).

本発明は上記実情に鑑みなされたものであって、基板の面に対する表面処理を効率的に行うことのできる技術を提供することを目的とする。   This invention is made | formed in view of the said situation, Comprising: It aims at providing the technique which can perform the surface treatment with respect to the surface of a board | substrate efficiently.

本発明の第一側面は、基板を支持する支持手段と、前記基板を間に挟むような位置関係で配置された第１のイオンソース及び第２のイオンソースと、前記支持手段により支持された１枚の基板又は前記支持手段によりそれぞれの処理面の反対面同士が対向して支持された２枚の基板と、前記第１及び第２のイオンソースとを、基板の面に沿った第１の方向に相対的に移動させながら、前記１枚の基板の両側の処理面又は前記２枚の基板のそれぞれの前記処理面に対し、前記第１及び第２のイオンソースからイオンビームを照射する制御を行う制御手段と、を有し、前記第１のイオンソースと前記第２のイオンソースの中間に位置し、且つ、前記第１の方向に平行で、前記１枚の基板の両側の処理面の中間又は前記２枚の基板のそれぞれの処理面の中間を通る仮想面を考えたときに、前記第１のイオンソースのイオンビームの前記仮想面における照射領域と、前記第２のイオンソースのイオンビームの前記仮想面における照射領域とが、前記仮想面上で異なる位置になるように、前記第１及び第２のイオンソースが配置されていることを特徴とする基板処理装置を提供
する。
The first aspect of the present invention is supported by the supporting means, the supporting means for supporting the substrate, the first ion source and the second ion source arranged in a positional relationship so as to sandwich the substrate therebetween, and the supporting means. One substrate or two substrates whose opposite surfaces are supported by the support means so as to face each other, and the first and second ion sources are arranged along a surface of the substrate. The ion beam is irradiated from the first and second ion sources to the processing surfaces on both sides of the one substrate or the processing surfaces of the two substrates, while relatively moving in the direction of. possess a control means for controlling the said first ion source located in the middle of the second ion source, and, parallel to the first direction, the processing of both sides of the one substrate Treatment of the middle of the surface or each of the two substrates When an imaginary surface passing through the middle is considered, an irradiation region on the virtual surface of the ion beam of the first ion source and an irradiation region on the virtual surface of the ion beam of the second ion source are Provided is a substrate processing apparatus in which the first and second ion sources are arranged so as to be in different positions on a virtual plane .

この構成によれば、基板とイオンソースを相対移動させながら、基板の面（１枚の基板の両側の処理面、又は、２枚の基板のそれぞれの処理面）に対する表面処理を行うことができるため、生産性の高い処理が実現できる。また、イオンビームで基板の表面を第１の方向に走査する方式となるため、基板全体の面積よりも小さい照射範囲のイオンビームで足りる。したがって、比較的小型のイオンソースにより、大サイズの基板の処理が可能である。   According to this configuration, surface treatment can be performed on the surface of the substrate (the treatment surfaces on both sides of one substrate or the treatment surfaces of each of the two substrates) while relatively moving the substrate and the ion source. Therefore, highly productive processing can be realized. Further, since the surface of the substrate is scanned in the first direction with an ion beam, an ion beam having an irradiation range smaller than the area of the entire substrate is sufficient. Therefore, a large-sized substrate can be processed by a relatively small ion source.

本発明の第二側面は、基板を支持する支持手段と、前記基板を間に挟むような位置関係で配置された第１のイオンソース及び第２のイオンソースと、を備える基板処理装置の制御方法であって、前記支持手段により支持された１枚の基板又は前記支持手段によりそれぞれの処理面の反対面同士が対向して支持された２枚の基板と、前記第１及び第２のイオンソースとを、基板の面に沿った第１の方向に相対的に移動させる工程と、前記１枚の基板の両側の処理面又は前記２枚の基板のそれぞれの前記処理面に対し、前記第１及び第２のイオンソースからイオンビームを照射する制御を行う工程と、を有し、前記第１及び第２のイオンソースからイオンビームを照射する制御を行う工程は、前記第１のイオンソースと前記第２のイオンソースの中間に位置し、且つ、前記第１の方向に平行で、前記１枚の基板の両側の処理面の中間又は前記２枚の基板のそれぞれの処理面の中間を通る仮想面を考えたときに、前記第１のイオンソースのイオンビームの前記仮想面における照射領域と、前記第２のイオンソースのイオンビームの前記仮想面における照射領域とが、前記仮想面上で異なる位置になるように配置された前記第１及び第２のイオンソースからイオンビームを照射する制御を行う工程であることを特徴とする基板処理装置の制御方法を提供する。
According to a second aspect of the present invention, there is provided a control of a substrate processing apparatus comprising: a supporting unit that supports a substrate; and a first ion source and a second ion source that are arranged in a positional relationship so as to sandwich the substrate. A method comprising: a single substrate supported by the support means, or two substrates supported by the support means so that opposite surfaces of each processing surface are opposed to each other; and the first and second ions Moving the source relative to a first direction along the surface of the substrate, and processing surfaces on both sides of the one substrate or each of the processing surfaces of the two substrates. 1 and a step of performing control from a second ion source irradiating an ion beam, have a step of performing control for irradiating the ion beam from the first and second ion source, the first ion source And the second ion source When an imaginary plane located between and parallel to the first direction and passing through the middle of the processing surfaces on both sides of the one substrate or the middle of each processing surface of the two substrates is considered The irradiation region on the virtual surface of the ion beam of the first ion source and the irradiation region on the virtual surface of the ion beam of the second ion source are arranged at different positions on the virtual surface. There is provided a method for controlling a substrate processing apparatus, characterized in that it is a step of performing control to irradiate an ion beam from the first and second ion sources .

本発明の第三側面は、上記基板処理装置と、前記基板処理装置によって処理された基板の表面に成膜処理を行う成膜処理部と、を備えることを特徴とする成膜装置を提供する。   According to a third aspect of the present invention, there is provided a film forming apparatus comprising: the substrate processing apparatus; and a film forming processing unit that performs a film forming process on a surface of the substrate processed by the substrate processing apparatus. .

本発明の第四側面は、電子部品の製造方法であって、上記基板処理装置によって、前記電子部品が実装される基板の表面を処理する工程と、前記基板の表面に成膜処理を行う工程と、を有することを特徴とする電子部品の製造方法を提供する。   A fourth aspect of the present invention is a method for manufacturing an electronic component, the step of processing a surface of a substrate on which the electronic component is mounted by the substrate processing apparatus, and a step of performing a film forming process on the surface of the substrate An electronic component manufacturing method is provided.

本発明の第五側面は、電子部品の製造方法であって、基板を支持する支持手段により支持された１枚の基板又は前記支持手段によりそれぞれの処理面の反対面同士が対向して支持された２枚の基板を用意する工程と、前記基板を間に挟むような位置関係で配置された第１のイオンソース及び第２のイオンソースと、前記基板とを、基板の面に沿った第１の方向に相対的に移動させる工程と、前記１枚の基板の両側の処理面又は前記２枚の基板のそれぞれの前記処理面に対し、前記第１及び第２のイオンソースからイオンビームを照射する工程と、前記基板の表面に成膜処理を行う工程と、を有し、前記第１及び第２のイオンソースからイオンビームを照射する工程は、前記第１のイオンソースと前記第２のイオンソースの中間に位置し、且つ、前記第１の方向に平行で、前記１枚の基板の両側の処理面の中間又は前記２枚の基板のそれぞれの処理面の中間を通る仮想面を考えたときに、前記第１のイオンソースのイオンビームの前記仮想面における照射領域と、前記第２のイオンソースのイオンビームの前記仮想面における照射領域とが、前記仮想面上で異なる位置になるように配置された前記第１及び第２のイオンソースからイオンビームを照射する工程であることを特徴とする電子部品の製造方法を提供する。 According to a fifth aspect of the present invention, there is provided a method of manufacturing an electronic component, wherein one substrate supported by a supporting means for supporting a substrate or opposite surfaces of the respective processing surfaces are supported by the supporting means. A step of preparing two substrates, a first ion source and a second ion source arranged in a positional relationship so as to sandwich the substrate therebetween, and the substrate along a surface of the substrate. An ion beam from the first ion source and the second ion source with respect to the process surface on both sides of the one substrate or each of the process surfaces of the two substrates. irradiating, have a, and performing a film forming process on the surface of the substrate, irradiating an ion beam from said first and second ion source, wherein the first ion source second Located in the middle of the ion source of When considering a virtual plane parallel to the first direction and passing through the middle of the processing surfaces on both sides of the one substrate or the middle of the processing surfaces of the two substrates, the first ion source The first and second regions are arranged such that the irradiation region on the virtual surface of the ion beam of the second ion source and the irradiation region on the virtual surface of the ion beam of the second ion source are at different positions on the virtual surface. There is provided a method for manufacturing an electronic component, which is a step of irradiating an ion beam from two ion sources .

本発明によれば、基板の面に対する表面処理を効率的に行うことができる。   According to the present invention, the surface treatment on the surface of the substrate can be efficiently performed.

図１はインライン型の成膜装置の内部構成を模式的に示した上視図である。FIG. 1 is a top view schematically showing an internal configuration of an in-line type film forming apparatus. 図２は成膜装置の動作を示すフローチャートである。FIG. 2 is a flowchart showing the operation of the film forming apparatus. 図３は基板処理装置の内部構成を上方からみた模式図である。FIG. 3 is a schematic view of the internal configuration of the substrate processing apparatus as viewed from above. 図４は基板処理装置の内部構成を基板の搬送方向にみた模式図である。FIG. 4 is a schematic view of the internal configuration of the substrate processing apparatus as viewed in the substrate transport direction. 図５Ａ〜図５Ｄはイオンソースの構成を示す図である。5A to 5D are diagrams showing the configuration of the ion source. 図６はバイアス部材が設置された様子を示す正面図である。FIG. 6 is a front view showing a state in which the bias member is installed. 図７はビーム同士の衝突による処理ムラを説明する図である。FIG. 7 is a diagram for explaining processing unevenness due to collision between beams. 図８Ａ及び図８Ｂは第２実施形態のイオンソース配置の例を示す図である。8A and 8B are diagrams showing examples of the ion source arrangement of the second embodiment. 図９Ａ及び図９Ｂは第２実施形態のイオンソース配置の例を示す図である。9A and 9B are diagrams illustrating examples of ion source arrangements according to the second embodiment. 図１０はイオンビームを基板に垂直に当てた場合の課題を説明する図である。FIG. 10 is a diagram for explaining a problem when the ion beam is applied perpendicularly to the substrate. 図１１Ａ〜図１１Ｃは第３実施形態のイオンソース配置の例を示す図である。11A to 11C are diagrams illustrating examples of ion source arrangements according to the third embodiment. 図１２は第３実施形態のバイアス部材の変形例を示す図である。FIG. 12 is a view showing a modification of the bias member of the third embodiment. 図１３は第４実施形態の基板検知の構成を模式的に示す図である。FIG. 13 is a diagram schematically illustrating a configuration of substrate detection according to the fourth embodiment. 図１４は第４実施形態のイオンソース制御の一例を示すフローチャートである。FIG. 14 is a flowchart illustrating an example of ion source control according to the fourth embodiment. 図１５は第４実施形態の基板検知の構成の変形例を示す図である。FIG. 15 is a diagram illustrating a modified example of the configuration of the substrate detection according to the fourth embodiment. 図１６は２枚の基板のそれぞれの処理面にイオンビームを照射する様子を示す図である。FIG. 16 is a diagram showing a state in which an ion beam is irradiated on each processing surface of two substrates.

以下、図面を参照しつつ本発明の好適な実施形態及び実施例を説明する。ただし、以下の実施形態及び実施例は本発明の好ましい構成を例示的に示すものにすぎず、本発明の範囲はそれらの構成に限定されない。また、以下の説明における、装置のハードウェア構成及びソフトウェア構成、処理フロー、製造条件、寸法、材質、形状などは、特に特定的な記載がないかぎりは、本発明の範囲をそれらのみに限定する趣旨のものではない。   Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In the following description, the hardware configuration and software configuration of the apparatus, processing flow, manufacturing conditions, dimensions, materials, shapes, and the like limit the scope of the present invention only to those unless otherwise specified. It is not intended.

＜第１実施形態＞
（成膜装置の全体構成）
図１は、本発明の第１実施形態に係る成膜装置１の全体的な内部構成を模式的に示した上視図である。成膜装置１は、成膜処理される基板２が収容されるストッカ室１１と、基板２の加熱処理を行う仕込室１２と、基板２の処理面に前処理や成膜処理を行う処理室１３と、を備える。処理室１３は、前処理エリア１３Ａと成膜エリア１３Ｂを含んでおり、前処理エリア１３Ａには、成膜処理に先立って基板２の処理面の洗浄等の前処理を行うための基板処理装置１４が設けられ、成膜エリア１３Ｂには、基板２の処理面に成膜処理を行う成膜処理部としてのスパッタ装置１５が設けられている。なお、前処理エリア１３Ａの基板処理装置１４の前段に設けられた空間は、基板処理装置１４による前処理を施す前の基板が待機するスペースである。本実施形態の成膜装置１は、基板２を支持・搬送しつつ加熱〜前処理〜成膜といった一連の処理を施す、いわゆるインライン型の構成を有している。 <First Embodiment>
(Overall configuration of deposition system)
FIG. 1 is a top view schematically showing the overall internal configuration of the film forming apparatus 1 according to the first embodiment of the present invention. The film forming apparatus 1 includes a stocker chamber 11 in which a substrate 2 to be formed is accommodated, a preparation chamber 12 that performs heat treatment of the substrate 2, and a processing chamber that performs pretreatment and film formation on the processing surface of the substrate 2. 13. The processing chamber 13 includes a preprocessing area 13A and a film forming area 13B. The preprocessing area 13A includes a substrate processing apparatus for performing preprocessing such as cleaning of the processing surface of the substrate 2 prior to film forming processing. 14 is provided, and in the film formation area 13B, a sputtering apparatus 15 is provided as a film formation processing unit for performing a film formation process on the processing surface of the substrate 2. In addition, the space provided in the front stage of the substrate processing apparatus 14 in the preprocessing area 13A is a space where the substrate before performing the preprocessing by the substrate processing apparatus 14 waits. The film forming apparatus 1 of the present embodiment has a so-called in-line configuration in which a series of processes such as heating, pretreatment, and film formation are performed while supporting and transporting the substrate 2.

図２は、成膜装置１の動作を示すフローチャートである。ストッカ室１１には複数枚の基板２が収容されている。そのうち処理対象となる基板２が、ストッカ室１１から仕込室１２へ搬送され（ステップＳ１０１）、ヒータ１２１により加熱される（ステップＳ１０２）。本実施形態では、約十分ほどの加熱処理により、１００℃から１８０℃程度まで基板２を加熱する。その後、基板２が仕込室１２から処理室１３の前処理エリア１３Ａへ搬送される（ステップＳ１０３）。前処理エリア１３Ａでは、基板処理装置１４により基板２の処理面に対してイオンビーム照射による表面処理が施される（ステップＳ１０４）。次に、基板２が成膜エリア１３Ｂへ搬送され（ステップＳ１０５）、スパッタ装置１５により基板２の処理面に対しスパッタリング処理が施される（ステップＳ１０６）。スパッタリング処理で用いられるターゲット１５１、１５２は同種の材料でもよいし異なる材料でもよい。以上で、基板２に対する成膜処理が終了する。処理終了後の基板２はストッカ室１１へと排出される。   FIG. 2 is a flowchart showing the operation of the film forming apparatus 1. A plurality of substrates 2 are accommodated in the stocker chamber 11. Among them, the substrate 2 to be processed is transferred from the stocker chamber 11 to the preparation chamber 12 (step S101) and heated by the heater 121 (step S102). In the present embodiment, the substrate 2 is heated from about 100 ° C. to about 180 ° C. by an approximately sufficient heat treatment. Thereafter, the substrate 2 is transferred from the preparation chamber 12 to the preprocessing area 13A of the processing chamber 13 (step S103). In the pretreatment area 13A, the substrate processing apparatus 14 performs surface treatment by ion beam irradiation on the processing surface of the substrate 2 (step S104). Next, the substrate 2 is transferred to the film formation area 13B (step S105), and the sputtering process is performed on the processing surface of the substrate 2 by the sputtering apparatus 15 (step S106). The targets 151 and 152 used in the sputtering process may be the same material or different materials. Thus, the film forming process for the substrate 2 is completed. The substrate 2 after the processing is discharged to the stocker chamber 11.

本実施形態に係る成膜装置１は、例えば、前処理を伴う種々の電極形成に適用可能である。具体例としては、例えば、ＦＣ−ＢＧＡ（Ｆｌｉｐ−Ｃｈｉｐ Ｂａｌｌ Ｇｒｉｄ
Ａｒｒａｙ）実装基板向けのメッキシード膜や、ＳＡＷ（Ｓｕｒｆａｃｅ Ａｃｏｕｓｔｉｃ Ｗａｖｅ）デバイス向けのメタル積層膜の成膜が挙げられる。また、ＬＥＤのボンディング部における導電性硬質膜、ＭＬＣＣ（Ｍｕｌｔｉ−Ｌａｙｅｒｅｄ Ｃｅｒａｍｉｃ Ｃａｐａｃｉｔｏｒ）の端子部膜の成膜なども挙げられる。その他、電子部品パッケージにおける電磁シールド膜やチップ抵抗器の端子部膜の成膜にも適用可能である。基板２のサイズは特に限定されないが、本実施形態では、２００ｍｍ×２００ｍｍ程度のサイズの基板２を例示する。また、基板２の材料は任意であり、例えば、ポリイミド、ガラス、シリコン、金属、セラミックなどの基板が用いられる。本実施形態では、セラミックの両面にポリイミド系の樹脂コーティングがされた基板を用いる。 The film forming apparatus 1 according to the present embodiment can be applied to various electrode formations that involve pretreatment, for example. As a specific example, for example, FC-BGA (Flip-Chip Ball Grid)
Array) A plating seed film for a mounting substrate and a metal laminated film for a SAW (Surface Acoustic Wave) device may be mentioned. In addition, a conductive hard film in the bonding part of the LED, a film formation of a terminal part film of MLCC (Multi-Layered Ceramic Capacitor), and the like are also included. In addition, the present invention can be applied to the formation of an electromagnetic shielding film in an electronic component package and a terminal film of a chip resistor. Although the size of the board | substrate 2 is not specifically limited, In this embodiment, the board | substrate 2 about 200 mm x 200 mm in size is illustrated. Moreover, the material of the board | substrate 2 is arbitrary, For example, board | substrates, such as a polyimide, glass, a silicon | silicone, a metal, and a ceramic, are used. In this embodiment, a substrate having a polyimide resin coating on both sides of a ceramic is used.

（基板処理装置）
図３及び図４に、本実施形態に係る基板処理装置１４の構成を示す。図３は、基板処理装置１４の内部構成を上方からみた模式図であり、図４は、基板処理装置１４の内部構成を基板２の搬送方向にみた模式図である。 (Substrate processing equipment)
3 and 4 show the configuration of the substrate processing apparatus 14 according to the present embodiment. FIG. 3 is a schematic view of the internal configuration of the substrate processing apparatus 14 as viewed from above. FIG. 4 is a schematic view of the internal configuration of the substrate processing apparatus 14 as viewed in the transport direction of the substrate 2.

本実施形態の基板処理装置１４は、イオンビーム照射により基板の表面（処理面）に対し洗浄ないしエッチングの処理を行うための装置であって、概略、チャンバ４１、基板支持部（支持手段）４２、第１のイオンソース４３ａ、第２のイオンソース４３ｂ、第１の高圧電源４４ａ、第２の高圧電源４４ｂ、第１のバイアス部材４５ａ、第２のバイアス部材４５ｂ、第１のバイアス電源４６ａ、第２のバイアス電源４６ｂ、及び、制御部４７を備える。符号４８ａは第１のイオンソース４３ａから照射されたイオンビーム、符号４８ｂは第２のイオンソース４３ｂから照射されたイオンビームを示す。   The substrate processing apparatus 14 according to this embodiment is an apparatus for performing cleaning or etching processing on the surface (processing surface) of a substrate by ion beam irradiation. The substrate processing apparatus 14 generally includes a chamber 41 and a substrate support portion (support means) 42. , First ion source 43a, second ion source 43b, first high-voltage power supply 44a, second high-voltage power supply 44b, first bias member 45a, second bias member 45b, first bias power supply 46a, A second bias power supply 46 b and a control unit 47 are provided. Reference numeral 48a indicates an ion beam irradiated from the first ion source 43a, and reference numeral 48b indicates an ion beam irradiated from the second ion source 43b.

チャンバ４１は、処理室１３を構成する気密容器であり、不図示の排気ポンプにより真空状態又は減圧状態に維持される。チャンバ４１全体は電気的に接地されている。基板支持部４２は、基板２の処理面が鉛直方向に沿うように基板２を垂直な姿勢で支持しつつ、チャンバ４１の底面に敷設されたレール上を移動可能な構造を有する。レールは基板２の表面と平行な方向に延設されており、不図示のモータの駆動により基板支持部４２は基板２の表面に平行な方向に沿って移動する。   The chamber 41 is an airtight container constituting the processing chamber 13, and is maintained in a vacuum state or a reduced pressure state by an unillustrated exhaust pump. The entire chamber 41 is electrically grounded. The substrate support unit 42 has a structure that can move on a rail laid on the bottom surface of the chamber 41 while supporting the substrate 2 in a vertical posture so that the processing surface of the substrate 2 is along the vertical direction. The rail extends in a direction parallel to the surface of the substrate 2, and the substrate support 42 moves along a direction parallel to the surface of the substrate 2 by driving a motor (not shown).

第１のイオンソース４３ａ及び第２のイオンソース４３ｂはイオンビームの照射手段である。本実施形態では２つのイオンソース４３ａ、４３ｂが、基板２を間に挟むような位置関係に配置され、基板２の両側の処理面に同時にイオンビームを照射可能な構成を採用している。具体的には、第１のイオンソース４３ａは、基板２の第１の面２０ａ（ここでは、搬送方向に向かって左手側の面を第１の面２０ａと呼ぶ）にイオンビームを照射し、第２のイオンソース４３ｂは、基板２の第２の面２０ｂ（ここでは、搬送方向に向かって右手側の面を第２の面２０ｂと呼ぶ）にイオンビームを照射する。なお、イオンソース−基板間の距離は約１００〜２００ｍｍに設定されている。第１の高圧電源４４ａ及び第２の高圧電源４４ｂはそれぞれ第１のイオンソース４３ａ及び第２のイオンソース４３ｂにアノード電圧（〜数ｋＶ）を印加するための電源である。   The first ion source 43a and the second ion source 43b are ion beam irradiation means. In the present embodiment, a configuration is adopted in which the two ion sources 43 a and 43 b are arranged in a positional relationship such that the substrate 2 is sandwiched between them, and the processing surfaces on both sides of the substrate 2 can be simultaneously irradiated with an ion beam. Specifically, the first ion source 43a irradiates the first surface 20a of the substrate 2 (here, the surface on the left hand side in the transport direction is referred to as the first surface 20a) with an ion beam, The second ion source 43b irradiates the second surface 20b of the substrate 2 (here, the surface on the right hand side in the transport direction is referred to as the second surface 20b) with an ion beam. The distance between the ion source and the substrate is set to about 100 to 200 mm. The first high-voltage power supply 44a and the second high-voltage power supply 44b are power supplies for applying an anode voltage (up to several kV) to the first ion source 43a and the second ion source 43b, respectively.

第１のバイアス部材４５ａは、第１のイオンソース４３ａのイオンビームのエッチング分布を補正（平滑化）するための部材であり、イオンビームを取り囲むように配置されている。第１のバイアス部材４５ａは、絶縁スペーサを介してチャンバ４１内壁に固定されており、第１のバイアス電源４６ａから数十Ｖ程度のバイアスが印加されている。また、第２のバイアス部材４５ｂは、第２のイオンソース４３ｂのイオンビームのエッチング分布を補正（平滑化）するための部材である。その構成は第１のイオンソース４３ｂと同様のため繰り返しの説明は割愛する。   The first bias member 45a is a member for correcting (smoothing) the ion beam etching distribution of the first ion source 43a, and is disposed so as to surround the ion beam. The first bias member 45a is fixed to the inner wall of the chamber 41 through an insulating spacer, and a bias of about several tens of volts is applied from the first bias power source 46a. The second bias member 45b is a member for correcting (smoothing) the ion beam etching distribution of the second ion source 43b. Since the configuration is the same as that of the first ion source 43b, repeated description is omitted.

なお、第１のイオンソース４３ａと第２のイオンソース４３ｂとは（配置は異なるが）基本的な構造は同じである。したがって、両者に共通する説明においては、両者を区別せず、単に「イオンソース４３」とも表記する。同じように、第１の面２０ａ側の構成か第２の面２０ｂ側の構成かを区別する必要が無い場合は、「高圧電源４４」、「バイアス部材４５」、「バイアス電源４６」とも表記する。   The basic structure of the first ion source 43a and the second ion source 43b is the same (although the arrangement is different). Therefore, in the explanation common to both, they are not distinguished from each other, and are simply expressed as “ion source 43”. Similarly, when it is not necessary to distinguish between the configuration on the first surface 20a side and the configuration on the second surface 20b side, they are also expressed as “high voltage power supply 44”, “bias member 45”, and “bias power supply 46”. To do.

制御部４７は、基板処理装置１４の各部の動作を制御するための装置である。具体的には、制御部４７は、基板支持部４２の移動、不図示の排気ポンプの制御、高圧電源４４の制御（イオンソース４３のオン／オフ）、バイアス電源４６の制御などを行う。   The control unit 47 is a device for controlling the operation of each unit of the substrate processing apparatus 14. Specifically, the control unit 47 performs movement of the substrate support unit 42, control of an unillustrated exhaust pump, control of the high-voltage power supply 44 (on / off of the ion source 43), control of the bias power supply 46, and the like.

（イオンソース）
図５Ａ〜図５Ｃを参照して、イオンソース４３の詳しい構成を説明する。図５Ａはイオンソース４３の側面図であり、図５Ｂはイオンソース４３のビーム照射面（端面）を示す正面図であり、図５Ｃはイオンソース４３のＡ−Ａ断面図である。 (Ion source)
A detailed configuration of the ion source 43 will be described with reference to FIGS. 5A to 5C. 5A is a side view of the ion source 43, FIG. 5B is a front view showing a beam irradiation surface (end surface) of the ion source 43, and FIG. 5C is an AA cross-sectional view of the ion source 43.

イオンソース４３は、概略、カソード５０、アノード５１、磁石５２を有して構成される。本実施形態ではカソード５０がイオンソース４３の筐体を兼ねている。カソード５０とアノード５１はそれぞれＳＵＳにより形成され、両者は電気的に絶縁されている。カソード５０はチャンバ４１に固定されることで、電気的に接地されている。一方、アノード５１は高圧電源４４に接続されている。この構成において、高圧電源４４からアノード５１に対し高圧が印加されると、筐体（カソード５０）のビーム照射面５５に設けられた出射開口からイオンビームが出射する。なお、イオンソース４３の原理としては、筐体の背面側からガスを導入して筐体内部でイオンを発生するタイプと、筐体の外側に存在する雰
囲気ガスをイオン化するタイプとがあるが、いずれを用いてもよい。ガスとしては、アルゴンガス、酸素ガス、窒素ガスなどを用いることができる。 The ion source 43 generally includes a cathode 50, an anode 51, and a magnet 52. In the present embodiment, the cathode 50 also serves as the casing of the ion source 43. The cathode 50 and the anode 51 are each formed of SUS, and both are electrically insulated. The cathode 50 is electrically grounded by being fixed to the chamber 41. On the other hand, the anode 51 is connected to a high voltage power supply 44. In this configuration, when a high voltage is applied from the high voltage power supply 44 to the anode 51, an ion beam is emitted from the emission opening provided in the beam irradiation surface 55 of the housing (cathode 50). The principle of the ion source 43 includes a type in which gas is introduced from the back side of the casing to generate ions inside the casing and a type in which atmospheric gas existing outside the casing is ionized. Any of them may be used. As the gas, argon gas, oxygen gas, nitrogen gas, or the like can be used.

本実施形態のイオンソース４３は、出射開口が長手方向と短手方向を持つように、約２５０ｍｍ×約７０ｍｍの長細い形状（ライン形状又はトラック形状）のビーム照射面５５を有している。そして、出射開口の長手方向が基板２の搬送方向に対して交差するように、イオンソース４３が配置されている。このような縦長のイオンソース４３を用いることで、基板２の縦方向（搬送方向に対して直交する方向）全体にイオンビームが照射されることとなる。したがって、搬送方向に沿った１回のビーム走査で基板２の全面に対しビームを照射でき、表面処理の高速化（生産性向上）を図ることができる。   The ion source 43 of the present embodiment has a beam irradiation surface 55 having a long and narrow shape (line shape or track shape) of about 250 mm × about 70 mm so that the exit aperture has a longitudinal direction and a short direction. The ion source 43 is arranged so that the longitudinal direction of the exit opening intersects the transport direction of the substrate 2. By using such a vertically long ion source 43, the ion beam is irradiated to the entire vertical direction of the substrate 2 (direction perpendicular to the transport direction). Accordingly, the entire surface of the substrate 2 can be irradiated with a single beam scan along the transport direction, and the surface treatment can be speeded up (productivity improved).

ところで、図５Ｄは、イオンソース４３から出射されるイオンビームの長手方向のエッチング分布（強度分布）を示している。同図に示されるように、イオンビームの長手方向の強度は一様ではなく、イオンソース４３の磁場設計に依存して、破線５６のように中央部分の強度が大きくなるか、実線５７のように中央部分の強度が小さくなるかのいずれかの分布をとる。図５Ｄのようなエッチング分布の偏りがあると、基板２のエッチング量にムラが生じるため望ましくない。そこで、バイアス部材４５によってエッチング分布の偏りを補正することが好ましい。   Incidentally, FIG. 5D shows the etching distribution (intensity distribution) in the longitudinal direction of the ion beam emitted from the ion source 43. As shown in the figure, the intensity of the ion beam in the longitudinal direction is not uniform, and depending on the magnetic field design of the ion source 43, the intensity of the central portion increases as indicated by the broken line 56, or as indicated by the solid line 57. The distribution in which the intensity of the central portion becomes smaller is taken. An uneven etching distribution as shown in FIG. 5D is not desirable because the etching amount of the substrate 2 is uneven. Therefore, it is preferable to correct the deviation of the etching distribution by the bias member 45.

（バイアス部材）
図６は、バイアス部材４５が設置された様子を示す正面図である。同図のように、バイアス部材４５は、矩形の枠体からなり、イオンソース４３のビーム照射面５５から出射されるイオンビームの周囲を取り囲むように設置される（ビーム照射面５５とバイアス部材４５は数ｍｍ程度の隙間をあけて配置される。）。バイアス部材４５は、導電性を有する材質であればどのような材料で形成してもよい。典型的には金属材料を用いればよく、枠体の剛性を考慮すると、ＳＵＳなどを好適に用いることができる。本実施形態では、板厚約１ｍｍのＳＵＳ板を折り曲げることにより、バイアス部材４５が形成されている。 (Bias member)
FIG. 6 is a front view showing a state in which the bias member 45 is installed. As shown in the figure, the bias member 45 is formed of a rectangular frame and is installed so as to surround the periphery of the ion beam emitted from the beam irradiation surface 55 of the ion source 43 (the beam irradiation surface 55 and the bias member 45). Are arranged with a gap of about several mm). The bias member 45 may be formed of any material as long as it is a conductive material. Typically, a metal material may be used, and SUS or the like can be preferably used in consideration of the rigidity of the frame. In the present embodiment, the bias member 45 is formed by bending a SUS plate having a thickness of about 1 mm.

ここで、イオンソース４３のエッチング分布が図５Ｄの破線５６のような場合には、イオンビーム（プラスイオン）と反発するように、バイアス部材４５にプラスバイアスをかける。これにより、端部のビームが収束し、端部のビーム強度が増すため、エッチング分布が平滑化される。一方、イオンソース４３のエッチング分布が図５Ｄの実線５７のような場合には、バイアス部材４５にマイナスバイアスをかけるとよい。これにより、端部のビームが発散し、端部のビーム強度が下がるため、エッチング分布が平滑化される。このように、バイアス部材４５によってイオンビームのエッチング分布の偏りを補正することにより、エッチング量のムラを抑制し、均一な表面処理を実現できる。   Here, when the etching distribution of the ion source 43 is as indicated by a broken line 56 in FIG. 5D, a positive bias is applied to the bias member 45 so as to repel the ion beam (plus ions). As a result, the beam at the end converges and the beam intensity at the end increases, so that the etching distribution is smoothed. On the other hand, when the etching distribution of the ion source 43 is as indicated by the solid line 57 in FIG. 5D, it is preferable to apply a negative bias to the bias member 45. As a result, the beam at the end diverges and the beam intensity at the end decreases, so that the etching distribution is smoothed. In this way, by correcting the bias in the ion beam etching distribution by the bias member 45, unevenness in the etching amount can be suppressed and uniform surface treatment can be realized.

（表面処理の流れ）
イオンビーム照射による表面処理（ステップＳ１０４）の詳細を説明する。基板２が処理室１３の前処理エリア１３Ａへ搬送されると、制御部４７が、第１の高圧電源４４ａ及び第２の高圧電源４４ｂを制御し、第１のイオンソース４３ａ及び第２のイオンソース４３ｂのビーム照射を開始する。その状態で、制御部４７が、基板支持部４２を一定速度で移動させ、基板２をイオンビームに通過させる。 (Surface treatment flow)
The details of the surface treatment (step S104) by ion beam irradiation will be described. When the substrate 2 is transferred to the pretreatment area 13A of the processing chamber 13, the control unit 47 controls the first high-voltage power supply 44a and the second high-voltage power supply 44b, and the first ion source 43a and the second ion Beam irradiation of the source 43b is started. In this state, the control unit 47 moves the substrate support unit 42 at a constant speed and allows the substrate 2 to pass through the ion beam.

このような方法により、基板２の第１の面２０ａと第２の面２０ｂの両方にイオンビームが照射され、基板２の両面を同時に表面処理することができる。したがって、従来のように固定基板の両面を処理する方法に比べて、生産性の高い処理が実現できる。また、本実施形態のようにビーム走査を採用したことで、基板２の面積よりも小さい照射範囲のイオンビームで基板全体の処理を行うことができるため、イオンソース４３の小型化、ひいては装置全体の小型化を図ることができる。また、本実施形態のように、基板２の処理面
が鉛直方向に沿うような姿勢で基板２を支持し、処理面に対して水平方向にイオンビームを照射する構成を採用したことで、エッチングによって削られたパーティクルが重力によって落下し、基板２の処理面に残留しないため、パーティクルの残留による処理ムラの発生を防止することができるという利点もある。 By such a method, both the first surface 20a and the second surface 20b of the substrate 2 are irradiated with the ion beam, and both surfaces of the substrate 2 can be surface-treated at the same time. Therefore, it is possible to realize processing with high productivity as compared with the conventional method of processing both surfaces of the fixed substrate. Further, since the beam scanning is employed as in the present embodiment, the entire substrate can be processed with an ion beam having an irradiation range smaller than the area of the substrate 2, so that the ion source 43 can be reduced in size and the entire apparatus. Can be miniaturized. Further, as in the present embodiment, etching is performed by adopting a configuration in which the substrate 2 is supported in such a posture that the processing surface of the substrate 2 is along the vertical direction and the ion beam is irradiated in the horizontal direction with respect to the processing surface. Since the particles scraped by the particles fall by gravity and do not remain on the processing surface of the substrate 2, there is an advantage that it is possible to prevent the processing unevenness due to the particles remaining.

＜第２実施形態＞
第１実施形態のように、基板２を移動させながら基板２の両側からイオンビームを照射する方法を採用した場合、ビーム同士の衝突による処理ムラが生ずるおそれがある。例えば図７に示すように、基板２がイオンビームの照射範囲を通過した後、第１のイオンソース４３ａのイオンビーム４８ａと第２のイオンソース４３ｂのイオンビーム４８ｂとが直接当たってしまうと、その衝突部分７０におけるプラズマが不安定な状態となり、周囲のプラズマにも影響を与え、基板表面に対するエッチング量にばらつきが生じるのである。第２実施形態は、このような課題に鑑みたものであり、ビーム同士の衝突による処理ムラを軽減するように、第１のイオンソース４３ａと第２のイオンソース４３ｂの配置を工夫した点に特徴を有する。 Second Embodiment
When the method of irradiating an ion beam from both sides of the substrate 2 while moving the substrate 2 as in the first embodiment, processing unevenness due to collision between the beams may occur. For example, as shown in FIG. 7, after the substrate 2 has passed through the ion beam irradiation range, the ion beam 48a of the first ion source 43a and the ion beam 48b of the second ion source 43b directly hit each other. The plasma in the collision portion 70 becomes unstable, affects the surrounding plasma, and the etching amount with respect to the substrate surface varies. The second embodiment has been made in view of such a problem, in that the arrangement of the first ion source 43a and the second ion source 43b is devised so as to reduce processing unevenness due to collision between beams. Has characteristics.

図８Ａは、第２実施形態に係るイオンソース配置の一例を示す図である。図８Ａにおいて、第１のイオンソース４３ａと第２のイオンソース４３ｂの中間に位置し、且つ、基板２の搬送方向に平行な仮想面８０を考える。本例の場合、仮想面８０は、基板２の厚み方向のちょうど中間点を通過し、且つ、基板２と平行な面となる。また、第１のイオンソース４３ａのイオンビームと仮想面８０とが交わる領域を第１の断面８１、第２のイオンソース４３ｂのイオンビームと仮想面８０とが交わる領域を第２の断面８２と呼ぶ。第１の断面８１は、第１のイオンソース４３ａのイオンビームの仮想面８０における照射領域を表し、第２の断面８２は、第２のイオンソース４３ｂのイオンビームの仮想面８０における照射領域を表している（なお、イオンビームは厳密には拡がりをもつかもしれないが、ここではイオンソースの幾何学的な配置を規定することが目的のため、イオンビームを拡がりをもたない平行ビームと仮定して考える。ビームの外縁部分（拡がった部分）はビームの中心部分に比べて強度が低下し、仮にビームの外縁同士が衝突したとしてもその影響は小さいため、平行ビームと仮定して考えても差し支えない。）。図８Ｂは、仮想面８０と各イオンビームの断面８１、８２を模式的に示す図である。   FIG. 8A is a diagram illustrating an example of an ion source arrangement according to the second embodiment. In FIG. 8A, consider a virtual plane 80 that is located between the first ion source 43 a and the second ion source 43 b and is parallel to the transport direction of the substrate 2. In the case of this example, the virtual surface 80 passes through an intermediate point in the thickness direction of the substrate 2 and is a surface parallel to the substrate 2. In addition, a region where the ion beam of the first ion source 43a and the virtual surface 80 intersect with each other is the first cross section 81, and a region where the ion beam of the second ion source 43b and the virtual surface 80 intersect with the second cross section 82. Call. The first cross section 81 represents the irradiation region on the virtual surface 80 of the ion beam of the first ion source 43a, and the second cross section 82 represents the irradiation region on the virtual surface 80 of the ion beam of the second ion source 43b. (Note that although the ion beam may have a divergence in the strict sense, the ion beam is defined as a parallel beam having no divergence for the purpose of defining the geometrical arrangement of the ion source. Assuming that the outer edge part (expanded part) of the beam has a lower intensity than the center part of the beam, and even if the outer edges of the beam collide with each other, the effect is small, so it is assumed that the beam is a parallel beam. It ’s okay.) FIG. 8B is a diagram schematically showing a virtual plane 80 and cross sections 81 and 82 of each ion beam.

本実施形態では、図８Ｂに示すように、第１の断面８１と第２の断面８２とが仮想面８０上で異なる位置になるように、第１のイオンソース４３ａと第２のイオンソース４３ｂを配置する。このように２つのイオンソース４３ａ、４３ｂを配置することによって、基板２が存在しない状態におけるビーム同士の衝突範囲を小さくすることができる。したがって、（図７の状態と比べて）ビーム同士の衝突に起因する処理ムラを軽減することができる。   In the present embodiment, as shown in FIG. 8B, the first ion source 43a and the second ion source 43b are arranged so that the first cross section 81 and the second cross section 82 are at different positions on the virtual plane 80. Place. By arranging the two ion sources 43a and 43b in this way, the collision range of the beams in the state where the substrate 2 does not exist can be reduced. Therefore, the processing unevenness caused by the collision between the beams can be reduced (compared to the state of FIG. 7).

ここで、第１の断面８１と第２の断面８２との重なりはできるだけ小さい方が好ましい。ビーム同士の衝突範囲が小さいほど処理ムラの軽減効果が高いと期待できるためである。例えば、第１の断面８１と第２の断面８２との重なり面積が、第１の断面８１の面積の１／２より小さいことが好ましく、１／４より小さいことがより好ましく、１／８より小さいことがさらに好ましい。そして、最も好ましくは、第１の断面８１と第２の断面８２とが仮想面８０上で離間している（つまり、まったく重ならない）構成がよい。図９Ａ及び図９Ｂは、第１の断面８１と第２の断面８２とが完全に離間したイオンソース配置の例である。この構成によれば、基板２が存在しない状態においてもビーム同士の衝突が発生しないため、上述したようなビーム同士の衝突に起因する処理ムラは発生せず、高品質な表面処理を実現できる。   Here, the overlap between the first cross section 81 and the second cross section 82 is preferably as small as possible. This is because it can be expected that the effect of reducing the processing unevenness is higher as the collision range between the beams is smaller. For example, the overlapping area of the first cross section 81 and the second cross section 82 is preferably smaller than 1/2 of the area of the first cross section 81, more preferably smaller than 1/4, and more than 1/8. More preferably, it is small. Most preferably, the first cross section 81 and the second cross section 82 are separated on the virtual plane 80 (that is, do not overlap at all). 9A and 9B are examples of an ion source arrangement in which the first cross section 81 and the second cross section 82 are completely separated from each other. According to this configuration, since the collision between the beams does not occur even when the substrate 2 is not present, the processing unevenness due to the collision between the beams as described above does not occur, and a high-quality surface treatment can be realized.

＜第３実施形態＞
図１０のようにイオンビーム４８を基板２に対し垂直に当てた場合、エッチングによって削られたパーティクル１００がイオンソース４３の方向に飛散し、イオンソース４３に付着してしまう可能性がある。第３実施形態は、このような課題に鑑みたものであり、基板２から飛散したパーティクル１００の付着を抑制するための構造に特徴を有する。 <Third Embodiment>
When the ion beam 48 is applied perpendicularly to the substrate 2 as shown in FIG. 10, there is a possibility that the particles 100 removed by the etching are scattered in the direction of the ion source 43 and attached to the ion source 43. The third embodiment has been made in view of such a problem, and has a feature in a structure for suppressing adhesion of the particles 100 scattered from the substrate 2.

図１１Ａは、第３実施形態に係るイオンソース配置の一例を示す図である。図から分かるように、本実施形態では、イオンソース４３ａ、４３ｂを基板２に対し傾ける（つまり、イオンビームを基板２に対し非垂直に当てる）。このような配置を採ることにより、イオンビームの入射方向とは反対の方向にパーティクル１１０が飛散するようになるため、イオンソース４３ａ、４３ｂへのパーティクル１１０の付着を抑制することができる。また、イオンビームを基板２に対して斜めに当てることにより、エッチング量の向上、すなわち、表面処理の効率を向上できるという付加的な効果もある。さらに、図１１Ａのようにイオンビームを成膜エリア１３Ｂ側に向けた場合、飛散したパーティクル１１０が仕込室１２に侵入したり、仕込室１２と処理室１３の間の構造物（扉など）に付着したりすることを防止できるという効果もある。   FIG. 11A is a diagram illustrating an example of an ion source arrangement according to the third embodiment. As can be seen from the drawing, in this embodiment, the ion sources 43a and 43b are tilted with respect to the substrate 2 (that is, the ion beam is applied non-perpendicularly to the substrate 2). By adopting such an arrangement, the particles 110 are scattered in the direction opposite to the incident direction of the ion beam, so that the adhesion of the particles 110 to the ion sources 43a and 43b can be suppressed. Further, by applying the ion beam obliquely with respect to the substrate 2, there is an additional effect that the etching amount, that is, the efficiency of the surface treatment can be improved. Furthermore, when the ion beam is directed toward the film forming area 13B as shown in FIG. 11A, the scattered particles 110 enter the charging chamber 12 or enter a structure (such as a door) between the charging chamber 12 and the processing chamber 13. There is also an effect that it can prevent adhesion.

なお、イオンビームを基板２に対しどの方向に傾けたとしても、上述したパーティクルの付着防止と表面処理の効率向上の効果を得ることはできる。ただし、本実施形態のようにライン形状のイオンソース４３を用いている場合には、長手方向の軸回りにイオンソース４３を回転させるようにイオンビームを傾けることが好ましい。言い換えると、イオンビーム（の軸）と基板２の搬送方向（の軸）とで張られる平面が基板２の表面と垂直になり、且つ、イオンビームが基板２の表面に対し非垂直に当たるように、イオンビームを傾けるとよい。このように傾けることによって、基板２の表面に照射されるビーム強度の偏りを避け、処理ムラを抑制することができるからである。   Note that, regardless of the direction in which the ion beam is tilted with respect to the substrate 2, it is possible to obtain the effects of preventing the adhesion of particles and improving the efficiency of the surface treatment. However, when the line-shaped ion source 43 is used as in this embodiment, it is preferable to incline the ion beam so as to rotate the ion source 43 around the longitudinal axis. In other words, the plane stretched by the ion beam (axis) and the transport direction (axis) of the substrate 2 is perpendicular to the surface of the substrate 2 and the ion beam strikes the surface of the substrate 2 non-perpendicularly. Tilt the ion beam. This is because by tilting in this way, it is possible to avoid unevenness of the beam intensity applied to the surface of the substrate 2 and suppress processing unevenness.

図１１Ｂは、イオンソース配置の他の例である。図１１Ｂでは、イオンビームを仕込室１２側に向けている。この構成でも、図１１Ａと同様、パーティクルの付着防止と表面処理の効率向上の効果を得ることができる。加えて、飛散したパーティクル１１０が成膜エリア１３Ｂに侵入したり、ターゲット１５１に付着したりすることを防止できるという効果もある。   FIG. 11B is another example of an ion source arrangement. In FIG. 11B, the ion beam is directed to the preparation chamber 12 side. Even with this configuration, the effect of preventing adhesion of particles and improving the efficiency of the surface treatment can be obtained as in FIG. 11A. In addition, there is an effect that it is possible to prevent the scattered particles 110 from entering the film formation area 13B or adhering to the target 151.

図１１Ｃは、イオンソース配置の他の例である。図１１Ｃでは、第１のイオンソース４３ａと第２のイオンソース４３ｂを逆方向に傾けている。この構成でも、図１１Ａと同様、パーティクルの付着防止と表面処理の効率向上の効果を得ることができる。   FIG. 11C is another example of the ion source arrangement. In FIG. 11C, the first ion source 43a and the second ion source 43b are inclined in opposite directions. Even with this configuration, the effect of preventing adhesion of particles and improving the efficiency of the surface treatment can be obtained as in FIG. 11A.

図１２は、バイアス部材の変形例である。この例では、バイアス部材４５の一部分を延設し、その延設部分によってパーティクルが飛散し得るエリアをカバーしている。図１２の例の場合は、イオンビームが搬送方向の下流側を向くようにイオンソース４３を傾けているので、バイアス部材４５の搬送方向下流側に板状の延設部分１２０を設けている。このような構成により、バイアス部材４５がいわゆる防着部材としての役割も担い、パーティクルが基板処理装置１４内の構造物に付着することを防ぐことができる。   FIG. 12 shows a modification of the bias member. In this example, a part of the bias member 45 is extended, and the extended part covers an area where particles can be scattered. In the case of the example in FIG. 12, the ion source 43 is inclined so that the ion beam faces the downstream side in the transport direction. Therefore, the plate-like extension portion 120 is provided on the downstream side in the transport direction of the bias member 45. With such a configuration, the bias member 45 also serves as a so-called adhesion preventing member, and particles can be prevented from adhering to the structure in the substrate processing apparatus 14.

＜第４実施形態＞
図１３及び図１４を参照して、第４実施形態を説明する。本実施形態では、ビーム照射範囲に基板が存在しない場合にイオンビームの照射を停止することによって、ビーム同士の衝突の発生を防止するものである。図１３は、第４実施形態の基板処理装置１４における基板検知の構成を模式的に示す図であり、図１４は、第４実施形態のイオンソース制御の一例を示すフローチャートである。 <Fourth embodiment>
The fourth embodiment will be described with reference to FIGS. 13 and 14. In this embodiment, when the substrate is not present in the beam irradiation range, the ion beam irradiation is stopped to prevent the collision of the beams. FIG. 13 is a diagram schematically illustrating a configuration of substrate detection in the substrate processing apparatus 14 of the fourth embodiment, and FIG. 14 is a flowchart illustrating an example of ion source control of the fourth embodiment.

図１３に示すように、前処理エリア１３Ａ内の基板２の搬送経路上に、基板２（又は基
板支持部４２）の有無を検知するための位置センサが４つ設けられている。位置センサ１３１は、第１のイオンソース４３ａをオンするためのセンサであり、位置センサ１３２は、第２のイオンソース４３ｂをオンするためのセンサである。また、位置センサ１３３は、第１のイオンソース４３ａをオフするためのセンサであり、位置センサ１３４は、第２のイオンソース４３ｂをオフするためのセンサである。 As shown in FIG. 13, four position sensors for detecting the presence or absence of the substrate 2 (or the substrate support portion 42) are provided on the transport path of the substrate 2 in the pretreatment area 13A. The position sensor 131 is a sensor for turning on the first ion source 43a, and the position sensor 132 is a sensor for turning on the second ion source 43b. The position sensor 133 is a sensor for turning off the first ion source 43a, and the position sensor 134 is a sensor for turning off the second ion source 43b.

基板２が前処理エリア１３Ａに搬入された時点（初期状態）では、第１のイオンソース４３ａも第２のイオンソース４３ｂもオフになっているものとする。制御部４７は、１番目の位置センサ１３１により基板２の先端を検知すると（ステップＳ１４０）、第１のイオンソース４３ａのみオンにする（ステップＳ１４１）。このとき、第２のイオンソース４３ｂはオフなので、イオンビームの衝突が発生することはない。次に、制御部４７は、２番目の位置センサ１３２により基板２の先端を検知すると（ステップＳ１４２）、第２のイオンソース４３ｂをオンにする（ステップＳ１４３）。この時点では、第１のイオンソース４３ａからのイオンビームは基板２によって遮られ、第２のイオンソース４３ｂ側には漏れないため、イオンビームの衝突が発生することはない。   It is assumed that both the first ion source 43a and the second ion source 43b are turned off when the substrate 2 is carried into the pretreatment area 13A (initial state). When the first position sensor 131 detects the tip of the substrate 2 (step S140), the controller 47 turns on only the first ion source 43a (step S141). At this time, since the second ion source 43b is off, collision of the ion beam does not occur. Next, when the second position sensor 132 detects the tip of the substrate 2 (step S142), the control unit 47 turns on the second ion source 43b (step S143). At this time, since the ion beam from the first ion source 43a is blocked by the substrate 2 and does not leak to the second ion source 43b side, collision of the ion beam does not occur.

その後、制御部４７は、３番目の位置センサ１３３により基板２の先端を検知すると（ステップＳ１４４）、第１のイオンソース４３ａをオフにする（ステップＳ１４５）。さらに制御部４７は、４番目の位置センサ１３４により基板２の先端を検知すると（ステップＳ１４６）、第２のイオンソース４３ｂをオフにする（ステップＳ１４７）。このような停止制御により、基板２の後端が第２のイオンソース４３ｂのビーム照射範囲から外れるより前に第１のイオンソース４３ａが停止するので、イオンビームの衝突が発生することはない。   Thereafter, when the third position sensor 133 detects the tip of the substrate 2 (step S144), the control unit 47 turns off the first ion source 43a (step S145). Further, when the control unit 47 detects the tip of the substrate 2 by the fourth position sensor 134 (step S146), the control unit 47 turns off the second ion source 43b (step S147). By such stop control, the first ion source 43a stops before the rear end of the substrate 2 deviates from the beam irradiation range of the second ion source 43b, so that collision of ion beams does not occur.

本実施形態の構成によれば、ビーム同士の衝突による表面処理への影響を可及的に防止することができる。また、無駄なビーム照射が無くなるので、消費電力の低減、並びに、イオンソースの劣化防止にも効果がある。さらに、基板２が存在しないときにビーム照射を停止することで、基板処理装置１４内の構造物にイオンビームが当たることが無くなるので、基板処理装置１４内の構造物の劣化防止にも効果がある。   According to the configuration of the present embodiment, it is possible to prevent the influence on the surface treatment due to the collision between the beams as much as possible. In addition, since unnecessary beam irradiation is eliminated, it is effective in reducing power consumption and preventing ion source deterioration. Further, by stopping the beam irradiation when the substrate 2 is not present, the ion beam does not hit the structure in the substrate processing apparatus 14, which is effective in preventing the deterioration of the structure in the substrate processing apparatus 14. is there.

なお、第４実施形態では４個の位置センサを設けたが、図１５のように、イオンソース４３のオン用の位置センサ１５１とオフ用の位置センサ１５２の２個の位置センサを設ける構成としてもよい。この場合、制御部４７は、１番目の位置センサ１５１で基板２の先端を検知したタイミングで第１のイオンソース４３ａと第２のイオンソース４３ｂの両方をオンにする。また、２番目の位置センサ１５２で基板２の先端を検知したタイミングで、２つのイオンソース４３ａ、４３ｂを同時にオフする。このような構成及び制御によっても、無駄なビーム照射を減らすことができるため、消費電力の低減、イオンソースや基板処理装置１４内の構造部の劣化防止などの効果が得られる。   In the fourth embodiment, four position sensors are provided. However, as shown in FIG. 15, two position sensors, ie, an on-position sensor 151 and an off-position sensor 152 are provided. Also good. In this case, the control unit 47 turns on both the first ion source 43 a and the second ion source 43 b at the timing when the first position sensor 151 detects the tip of the substrate 2. At the timing when the tip of the substrate 2 is detected by the second position sensor 152, the two ion sources 43a and 43b are simultaneously turned off. Even with such a configuration and control, it is possible to reduce useless beam irradiation, and thus it is possible to obtain effects such as reduction in power consumption and prevention of deterioration of the ion source and the structure in the substrate processing apparatus 14.

＜その他＞
第１から第４実施形態を例示して本発明の好ましい具体例を説明したが、本発明の範囲はこれらの具体例に限定されることはなく、その技術思想の範囲内で適宜変形することができる。例えば、第１から第４実施形態で述べた構成や制御内容については、技術的な矛盾がない限り、互いに組み合わせてもよい。 <Others>
The preferred specific examples of the present invention have been described by exemplifying the first to fourth embodiments, but the scope of the present invention is not limited to these specific examples, and may be appropriately modified within the scope of the technical idea. Can do. For example, the configurations and control contents described in the first to fourth embodiments may be combined with each other as long as there is no technical contradiction.

また、上記実施形態では、イオンソース４３の前側にバイアス部材４５を設けたが、イオンビームの強度分布が特に問題なければ、バイアス部材４５は設置しなくてもよい。また、上記実施形態では、基板支持部４２に１枚の基板を支持させて、１枚の基板の両面にイオンビームを照射する構成を例示したが、本発明の基板処理装置は１枚の基板の両側の処理面を同時に処理する用途のみならず、２枚の基板のそれぞれの処理面を同時に処理す
る用途にも利用できる。例えば、図１６に示すように、基板２ａ、２ｂそれぞれの処理面２０ａ、２０ｂが外側（イオンソース側）を向き、裏面（処理面の反対面）２１ａ、２１ｂが対向するように、２枚の基板２ａ、２ｂを基板支持部４２に設置し、一方の基板２ａの片側の処理面２０ａと他方の基板２ｂの片側の処理面２０ｂの２つの面にイオンビームを照射してもよい。これは、基板支持部４２の基板ホルダの構造を変えるだけでよい。なお、図１６では２枚の基板２ａ、２ｂを平行に設置しているが、それぞれの処理面２０ａ、２０ｂが対応するイオンソースの側を向くようになっていれば、２枚の基板２ａ、２ｂが非平行な状態で基板支持部４２に設置されても構わない。また、上記実施形態では、基板支持部４２により基板を縦にして支持したが、基板の支持姿勢はこれに限られない。例えば、基板を横にして支持してもよいし、斜めに支持してもよい。また、上記実施形態では、イオンソース４３を固定し基板支持部４２を移動させる構成としたが、基板支持部４２を固定しイオンソース４３を移動させてもよいし、基板支持部４２とイオンソース４３の両方を移動させてもよい。また、上記第３実施形態では、２つのイオンソース４３をともに傾けて配置したが、いずれか一方のみを傾ける構成でも構わない。 In the above embodiment, the bias member 45 is provided on the front side of the ion source 43. However, if the ion beam intensity distribution is not particularly problematic, the bias member 45 may be omitted. Moreover, in the said embodiment, although the board | substrate support part 42 supported one board | substrate and illustrated the structure which irradiates an ion beam to both surfaces of one board | substrate, the substrate processing apparatus of this invention is one board | substrate. The present invention can be used not only for processing the processing surfaces on both sides of the substrate simultaneously but also for processing the processing surfaces of the two substrates simultaneously. For example, as shown in FIG. 16, the two processing surfaces 20a and 20b of the substrates 2a and 2b face the outside (ion source side) and the back surfaces (opposite surfaces of the processing surfaces) 21a and 21b face each other. The substrates 2a and 2b may be installed on the substrate support portion 42, and the two surfaces of the one processing surface 20a of one substrate 2a and the one processing surface 20b of the other substrate 2b may be irradiated with an ion beam. This only requires changing the structure of the substrate holder of the substrate support 42. In FIG. 16, the two substrates 2a and 2b are installed in parallel. However, if the respective processing surfaces 20a and 20b face the corresponding ion source, the two substrates 2a and 2b You may install in the board | substrate support part 42 in the state where 2b is non-parallel. Moreover, in the said embodiment, although the board | substrate was supported vertically by the board | substrate support part 42, the support attitude | position of a board | substrate is not restricted to this. For example, the substrate may be supported sideways or may be supported diagonally. In the above embodiment, the ion source 43 is fixed and the substrate support 42 is moved. However, the substrate support 42 may be fixed and the ion source 43 may be moved, or the substrate support 42 and the ion source may be moved. Both of 43 may be moved. In the third embodiment, the two ion sources 43 are both tilted and arranged, but only one of them may be tilted.

なお、本明細書において、「平行」という用語は、特に断りのない限り又は技術的な制約や矛盾がない限り、数学的に厳密な平行（つまり２つの面又は線の間の角度が０度の状態）のみを意味するのではなく、２つの面又は線の間に所定の角度（例えば３０度より小さい角度）がある状態を含むものである。同様に、「垂直」や「直交」という用語は、２つの面又は線の間の角度が９０度である状態のみでなく、９０度から所定の角度だけ外れた状態（例えば９０度±３０度の範囲）を含む。同様に、「鉛直」という用語は、重力方向に一致する状態のみでなく、重力方向から所定の角度だけ外れた状態を含む。同様に、「水平」という用語は、重力方向と９０度で交わる状態のみでなく、９０度から所定の角度だけ外れた状態を含む。   In this specification, the term “parallel” means a mathematically exact parallel (that is, the angle between two surfaces or lines is 0 degree) unless otherwise specified or unless there is a technical limitation or contradiction. This includes not only the state of (2) but also a state in which there is a predetermined angle (for example, an angle smaller than 30 degrees) between two surfaces or lines. Similarly, the terms “perpendicular” and “orthogonal” are not only in a state where the angle between two surfaces or lines is 90 degrees, but also in a state deviated from 90 degrees by a predetermined angle (for example, 90 degrees ± 30 degrees). Range). Similarly, the term “vertical” includes not only a state corresponding to the direction of gravity but also a state deviated by a predetermined angle from the direction of gravity. Similarly, the term “horizontal” includes not only the state of intersecting the direction of gravity at 90 degrees, but also the state deviating from 90 degrees by a predetermined angle.

１：成膜装置
２：基板
１４：基板処理装置
４２：基板支持部
４３，４３ａ，４３ｂ：イオンソース
４５，４５ａ，４５ｂ：バイアス部材
４７：制御部
４８，４８ａ，４８ｂ：イオンビーム
1: Film forming apparatus 2: Substrate 14: Substrate processing apparatus 42: Substrate support parts 43, 43a, 43b: Ion sources 45, 45a, 45b: Bias member 47: Control parts 48, 48a, 48b: Ion beams

Claims (16)

基板を支持する支持手段と、
前記基板を間に挟むような位置関係で配置された第１のイオンソース及び第２のイオンソースと、
前記支持手段により支持された１枚の基板又は前記支持手段によりそれぞれの処理面の反対面同士が対向して支持された２枚の基板と、前記第１及び第２のイオンソースとを、基板の面に沿った第１の方向に相対的に移動させながら、前記１枚の基板の両側の処理面又は前記２枚の基板のそれぞれの前記処理面に対し、前記第１及び第２のイオンソースからイオンビームを照射する制御を行う制御手段と、
を有し、
前記第１のイオンソースと前記第２のイオンソースの中間に位置し、且つ、前記第１の方向に平行で、前記１枚の基板の両側の処理面の中間又は前記２枚の基板のそれぞれの処理面の中間を通る仮想面を考えたときに、
前記第１のイオンソースのイオンビームの前記仮想面における照射領域と、前記第２のイオンソースのイオンビームの前記仮想面における照射領域とが、前記仮想面上で異なる位置になるように、前記第１及び第２のイオンソースが配置されている
ことを特徴とする基板処理装置。 A support means for supporting the substrate;
A first ion source and a second ion source arranged in a positional relationship so as to sandwich the substrate therebetween;
One substrate supported by the support means or two substrates supported by the support means so that opposite surfaces of each processing surface are opposed to each other, and the first and second ion sources, The first and second ions are moved relative to the processing surfaces on both sides of the one substrate or the processing surfaces of the two substrates, while relatively moving in a first direction along the surface. Control means for controlling the irradiation of the ion beam from the source;
I have a,
Each of the two substrates is located between the first ion source and the second ion source and parallel to the first direction and between the processing surfaces on both sides of the one substrate. When considering a virtual plane that passes through the middle of
The irradiation region on the virtual surface of the ion beam of the first ion source and the irradiation region on the virtual surface of the ion beam of the second ion source are at different positions on the virtual surface. A substrate processing apparatus, wherein first and second ion sources are arranged . 前記第１のイオンソースのイオンビームの前記仮想面における断面と、前記第２のイオンソースのイオンビームの前記仮想面における断面とが、前記仮想面上で離間するように、前記第１及び第２のイオンソースが配置されている
ことを特徴とする請求項１に記載の基板処理装置。 The first and second sections are such that a cross section of the ion beam of the first ion source in the virtual plane and a cross section of the ion beam of the second ion source in the virtual plane are separated on the virtual plane. The substrate processing apparatus according to claim 1 , wherein two ion sources are arranged. 前記第１及び第２のイオンソースの出射開口は、長手方向と短手方向とを含み、その長手方向が前記第１の方向と交差するように配置されている
ことを特徴とする請求項１又は２に記載の基板処理装置。 The exit aperture of the first and second ion sources includes a longitudinal direction and a lateral direction, and is arranged so that the longitudinal direction intersects the first direction. Or the substrate processing apparatus of 2. 前記第１及び第２のイオンソースの前記長手方向の幅は、前記第１の方向に直交する方向の前記基板の幅よりも大きい
ことを特徴とする請求項３に記載の基板処理装置。 The substrate processing apparatus according to claim 3 , wherein a width of the first and second ion sources in the longitudinal direction is larger than a width of the substrate in a direction orthogonal to the first direction. 前記第１及び第２のイオンソースのうち少なくとも一方は、イオンビームが前記基板に対し非垂直に照射するように、配置されている
ことを特徴とする請求項１〜４のいずれか１項に記載の基板処理装置。 Wherein at least one of the first and second ion sources, as ion beam is irradiated to the non-perpendicular to the substrate, in any one of claims 1 to 4, characterized in that it is arranged The substrate processing apparatus as described. 前記第１及び第２のイオンソースの出射開口は、長手方向と短手方向とを含み、
前記第１及び第２のイオンソースのうち少なくとも一方は、イオンビームの長手方向が前記基板に垂直に照射し、且つ、当該イオンビームの短手方向が前記基板に対し非垂直に照射するように、配置されている
ことを特徴とする請求項１〜４のいずれか１項に記載の基板処理装置。 The exit apertures of the first and second ion sources include a longitudinal direction and a lateral direction,
At least one of the first and second ion sources irradiates the longitudinal direction of the ion beam perpendicularly to the substrate and irradiates the short direction of the ion beam non-perpendicular to the substrate. Are arranged, The substrate processing apparatus of any one of Claims 1-4 characterized by the above-mentioned. 前記第１及び第２のイオンソースそれぞれから出射されるイオンビームの周囲を取り囲むように配置され、且つ、バイアスが印加されている、バイアス部材をさらに有する
ことを特徴とする請求項１〜６のいずれか１項に記載の基板処理装置。 Arranged to surround the periphery of the ion beam emitted from each of the first and second ion source, and a bias is applied, according to claim 1-6, characterized in that it further comprises a biasing member The substrate processing apparatus of any one of Claims. 前記基板の有無を検知する検知手段をさらに有し、
前記制御手段は、前記検知手段の検知結果に基づき、前記第１のイオンソースのイオンビームの照射範囲に前記基板が存在しないと判断した場合に、前記第１のイオンソースからのイオンビームの照射をオフにし、前記検知手段の検知結果に基づき、前記第２のイオンソースのイオンビームの照射範囲に前記基板が存在しないと判断した場合に、前記第２のイオンソースからのイオンビームの照射をオフにする
ことを特徴とする請求項１〜７のいずれか１項に記載の基板処理装置。 It further has detection means for detecting the presence or absence of the substrate,
When the control means determines that the substrate does not exist in the irradiation range of the ion beam of the first ion source based on the detection result of the detection means, the irradiation of the ion beam from the first ion source. And when it is determined that the substrate does not exist in the ion beam irradiation range of the second ion source based on the detection result of the detection means, the ion beam irradiation from the second ion source is performed. the substrate processing apparatus according to any one of claims 1 to 7, characterized in that to turn off. 前記支持手段は、前記基板の前記処理面が鉛直方向に沿うように、前記基板を支持することを特徴とする請求項１〜８のいずれか１項に記載の基板処理装置。 Said supporting means along the said processing plane in the vertical direction of the substrate, the substrate processing apparatus according to any one of claims 1 to 8, characterized in that for supporting the substrate. 前記第１及び第２のイオンソースは、固定配置されており、
前記支持手段は、移動可能であることを特徴とする請求項１〜９のいずれか１項に記載の基板処理装置。 The first and second ion sources are fixedly arranged;
Said support means is a substrate processing apparatus according to any of claims 1-9, characterized in that it is movable. 基板を支持する支持手段と、
前記基板を間に挟むような位置関係で配置された第１のイオンソース及び第２のイオンソースと、を備える基板処理装置の制御方法であって、
前記支持手段により支持された１枚の基板又は前記支持手段によりそれぞれの処理面の反対面同士が対向して支持された２枚の基板と、前記第１及び第２のイオンソースとを、基板の面に沿った第１の方向に相対的に移動させる工程と、
前記１枚の基板の両側の処理面又は前記２枚の基板のそれぞれの前記処理面に対し、前記第１及び第２のイオンソースからイオンビームを照射する制御を行う工程と、
を有し、
前記第１及び第２のイオンソースからイオンビームを照射する制御を行う工程は、前記第１のイオンソースと前記第２のイオンソースの中間に位置し、且つ、前記第１の方向に平行で、前記１枚の基板の両側の処理面の中間又は前記２枚の基板のそれぞれの処理面の中間を通る仮想面を考えたときに、前記第１のイオンソースのイオンビームの前記仮想面における照射領域と、前記第２のイオンソースのイオンビームの前記仮想面における照射領域とが、前記仮想面上で異なる位置になるように配置された前記第１及び第２のイオンソースからイオンビームを照射する制御を行う工程である
ことを特徴とする基板処理装置の制御方法。 A support means for supporting the substrate;
A control method of a substrate processing apparatus comprising: a first ion source and a second ion source arranged in a positional relationship so as to sandwich the substrate therebetween,
One substrate supported by the support means or two substrates supported by the support means so that opposite surfaces of each processing surface are opposed to each other, and the first and second ion sources, Relatively moving in a first direction along the surface of
Performing a process of irradiating an ion beam from the first and second ion sources to the processing surfaces on both sides of the one substrate or the processing surfaces of each of the two substrates;
I have a,
The step of performing the control of irradiating the ion beam from the first and second ion sources is located between the first ion source and the second ion source and is parallel to the first direction. When an imaginary plane passing through the middle of the processing surfaces on both sides of the one substrate or the middle of the respective processing surfaces of the two substrates is considered in the imaginary surface of the ion beam of the first ion source An ion beam is emitted from the first and second ion sources arranged so that an irradiation region and an irradiation region of the ion beam of the second ion source on the virtual surface are different from each other on the virtual surface. A method for controlling a substrate processing apparatus, comprising: a step of performing irradiation control . 請求項１〜１０のいずれか１項に記載の基板処理装置と、
前記基板処理装置によって処理された基板の表面に成膜処理を行う成膜処理部と、
を備えることを特徴とする成膜装置。 A substrate processing device according to any one of claims 1 to 1 0,
A film forming unit that performs a film forming process on the surface of the substrate processed by the substrate processing apparatus;
A film forming apparatus comprising: 電子部品の製造方法であって、
請求項１〜１０のいずれか１項に記載の基板処理装置によって、前記電子部品が実装される基板の表面を処理する工程と、
前記基板の表面に成膜処理を行う工程と、
を有することを特徴とする電子部品の製造方法。 An electronic component manufacturing method comprising:
The substrate processing apparatus according to any one of claims 1 to 1 0, a step of treating the surface of the substrate on which the electronic component is mounted,
Performing a film forming process on the surface of the substrate;
A method for manufacturing an electronic component, comprising: 電子部品の製造方法であって、
基板を支持する支持手段により支持された１枚の基板又は前記支持手段によりそれぞれの処理面の反対面同士が対向して支持された２枚の基板を用意する工程と、
前記基板を間に挟むような位置関係で配置された第１のイオンソース及び第２のイオンソースと、前記基板とを、基板の面に沿った第１の方向に相対的に移動させる工程と、
前記１枚の基板の両側の処理面又は前記２枚の基板のそれぞれの前記処理面に対し、前記第１及び第２のイオンソースからイオンビームを照射する工程と、
前記基板の表面に成膜処理を行う工程と、
を有し、
前記第１及び第２のイオンソースからイオンビームを照射する工程は、前記第１のイオンソースと前記第２のイオンソースの中間に位置し、且つ、前記第１の方向に平行で、前記１枚の基板の両側の処理面の中間又は前記２枚の基板のそれぞれの処理面の中間を通る仮想面を考えたときに、前記第１のイオンソースのイオンビームの前記仮想面における照射領域と、前記第２のイオンソースのイオンビームの前記仮想面における照射領域とが、前記仮想面上で異なる位置になるように配置された前記第１及び第２のイオンソースからイオンビームを照射する工程である
することを特徴とする電子部品の製造方法。 An electronic component manufacturing method comprising:
Preparing one substrate supported by a supporting means for supporting the substrate or two substrates supported by the supporting means so that opposite surfaces of the respective processing surfaces are opposed to each other;
Relatively moving a first ion source and a second ion source arranged in a positional relationship so as to sandwich the substrate therebetween, and the substrate in a first direction along a surface of the substrate; ,
Irradiating the processing surfaces on both sides of the one substrate or the processing surfaces of each of the two substrates with an ion beam from the first and second ion sources;
Performing a film forming process on the surface of the substrate;
I have a,
The step of irradiating an ion beam from the first and second ion sources is located between the first ion source and the second ion source and parallel to the first direction, When an imaginary plane passing through the middle of the processing surfaces on both sides of the two substrates or the middle of the respective processing surfaces of the two substrates is considered, the irradiation region on the virtual surface of the ion beam of the first ion source Irradiating the ion beam from the first and second ion sources arranged so that the irradiation region of the ion beam of the second ion source on the virtual surface is different from the position on the virtual surface. A method for manufacturing an electronic component, characterized in that: 前記支持手段は、前記基板の前記処理面が鉛直方向に沿うように、前記基板を支持することを特徴とする請求項１４に記載の電子部品の製造方法。 It said supporting means along the said processing plane in the vertical direction of the substrate, method of manufacturing an electronic component according to claim 1 4, characterized in that for supporting the substrate. 前記基板は、セラミックの表面に樹脂コーティングがされた基板であることを特徴とする請求項１４または１５に記載の電子部品の製造方法。 The substrate manufacturing method of electronic component according to claim 1 4 or 1 5, characterized in that the ceramic surface is a substrate which is a resin coating.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112981331A (en) * 2019-12-02 2021-06-18 佳能特机株式会社 Film forming method and film forming apparatus
CN112981332A (en) * 2019-12-02 2021-06-18 佳能特机株式会社 Film forming method and film forming apparatus

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61163270A (en) * 1985-01-12 1986-07-23 Nissin Electric Co Ltd Thin film forming device by ion vapor deposition
JPS62287068A (en) * 1986-06-06 1987-12-12 Nissin Electric Co Ltd Ion beam vapor deposition device
JPH01195274A (en) * 1988-01-29 1989-08-07 Nippon Steel Corp Continuous thin film-forming apparatus
JPH05263245A (en) * 1992-03-19 1993-10-12 Hitachi Ltd Inline type ion beam treating system
KR19990047679A (en) * 1997-12-05 1999-07-05 박호군 Apparatus for Surface Treatment of Materials Using Ion Beams
JP3433703B2 (en) * 1999-09-03 2003-08-04 日新電機株式会社 Ion source device and vacuum processing device
JP2002313825A (en) * 2001-04-12 2002-10-25 Sony Corp Mounting method for bare chip, and bare chip processing apparatus
JP2008117753A (en) * 2006-10-12 2008-05-22 Tdk Corp Ion gun, ion beam etching device, ion beam etching equipment, etching method and manufacturing method of magnetic recording medium
SG155128A1 (en) * 2008-02-08 2009-09-30 Applied Materials Inc Photovoltaic device comprising a sputter deposited passivation layer as well as a method and apparatus for producing such a device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112981331A (en) * 2019-12-02 2021-06-18 佳能特机株式会社 Film forming method and film forming apparatus
CN112981332A (en) * 2019-12-02 2021-06-18 佳能特机株式会社 Film forming method and film forming apparatus
CN112981331B (en) * 2019-12-02 2024-03-08 佳能特机株式会社 Film forming method and film forming apparatus

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