SG155128A1 - Photovoltaic device comprising a sputter deposited passivation layer as well as a method and apparatus for producing such a device - Google Patents

Photovoltaic device comprising a sputter deposited passivation layer as well as a method and apparatus for producing such a device

Info

Publication number
SG155128A1
SG155128A1 SG200900629-7A SG2009006297A SG155128A1 SG 155128 A1 SG155128 A1 SG 155128A1 SG 2009006297 A SG2009006297 A SG 2009006297A SG 155128 A1 SG155128 A1 SG 155128A1
Authority
SG
Singapore
Prior art keywords
producing
well
passivation layer
sputter deposited
photovoltaic device
Prior art date
Application number
SG200900629-7A
Inventor
Roland Trassl
Sven Schramm
Winfried Wolke
Jan Catoir
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/028,457 external-priority patent/US20090199901A1/en
Priority claimed from EP08101435A external-priority patent/EP2088630A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG155128A1 publication Critical patent/SG155128A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present invention refers to a method of producing a photovoltaic device having at least one semiconductor unit comprising the following steps: - cleaning of at least one surface of the semiconductor unit by etching, - drying of the at least one surface of the semiconductor unit in a substantially oxygen-free or oxygen-depleted environment and depositing of a passivation layer on the at least one surface as well as to a device for carrying out such a method and to photovoltaic devices produced by this method.
SG200900629-7A 2008-02-08 2009-01-29 Photovoltaic device comprising a sputter deposited passivation layer as well as a method and apparatus for producing such a device SG155128A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/028,457 US20090199901A1 (en) 2008-02-08 2008-02-08 Photovoltaic device comprising a sputter deposited passivation layer as well as a method and apparatus for producing such a device
EP08101435A EP2088630A1 (en) 2008-02-08 2008-02-08 Photovoltaic device comprising a sputter deposited passivation layer as well as method and apparatus for producing such a device

Publications (1)

Publication Number Publication Date
SG155128A1 true SG155128A1 (en) 2009-09-30

Family

ID=41071295

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200900629-7A SG155128A1 (en) 2008-02-08 2009-01-29 Photovoltaic device comprising a sputter deposited passivation layer as well as a method and apparatus for producing such a device

Country Status (4)

Country Link
JP (1) JP2009188407A (en)
KR (1) KR20090086324A (en)
SG (1) SG155128A1 (en)
TW (1) TW201001738A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6567119B1 (en) * 2018-03-27 2019-08-28 キヤノントッキ株式会社 Substrate processing apparatus, control method therefor, film forming apparatus, and electronic component manufacturing method

Also Published As

Publication number Publication date
TW201001738A (en) 2010-01-01
JP2009188407A (en) 2009-08-20
KR20090086324A (en) 2009-08-12

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