KR20190113503A - Substrate processing apparatus and control method thereof, film formation apparatus, manufacturing method of electronic component - Google Patents

Abstract

The present invention is to provide a technique capable of efficiently performing surface treatment on the surface of a substrate. A substrate processing apparatus includes: a support means for supporting a substrate; a first ion source and a second ion source disposed in a positional relationship like sandwiching the substrate; one substrate supported by the support means or two substrates on which opposite surfaces of the individual processing surfaces face each other to be supported by the support means; and a control means for controlling the irradiation of the ion beams from first and second ion sources with regard to the processing surfaces on both sides of the one substrate or each of the processing surfaces of the two substrates while moving the first and second ion sources relatively in a first direction along the surface of the substrate.

Description

Substrate processing apparatus, control method thereof, film forming apparatus, manufacturing method of electronic component {SUBSTRATE PROCESSING APPARATUS AND CONTROL METHOD THEREOF, FILM FORMATION APPARATUS, MANUFACTURING METHOD OF ELECTRONIC COMPONENT}

TECHNICAL FIELD This invention relates to a substrate processing apparatus, its control method, the film-forming apparatus, and the manufacturing method of an electronic component.

In the film-forming apparatus of a semiconductor device, as a pre-process of film-forming, washing | cleaning (removal of a foreign material) and etching of the board | substrate surface by an ion beam may be performed. Conventionally, when performing such pretreatment with respect to both surfaces of a board | substrate, the method of irradiating an ion beam from both sides of the board | substrate fixed in the chamber like FIG.

Japanese Patent Publication No. 2008-117753

However, in the conventional method disclosed in Patent Literature 1, since the replacement of the substrate is required every time one substrate is processed, the work is complicated and the productivity is extremely bad. In addition, since the ion beam must be irradiated to the entire surface of the substrate, there is a limitation (or disadvantage that causes an enlargement of the ion source) that the substrate of a large size cannot be processed.

The present invention has been made in view of the above-described circumstances, and an object thereof is to provide a technique capable of efficiently performing surface treatment on a surface of a substrate.

According to a first aspect of the present invention, there is provided a support means for supporting a substrate, a first ion source and a second ion source disposed in a positional relationship such as sandwiching the substrate therebetween, and one sheet supported by the support means. While moving the two substrates and the first and second ion sources relatively supported by opposite substrates of the respective processing surfaces by the substrate or the supporting means in the first direction along the surface of the substrate, And control means for performing control of irradiating ion beams from the first and second ion sources to the processing surfaces on both sides of the one substrate or each of the processing surfaces of the two substrates. A substrate processing apparatus is provided.

According to this configuration, since the surface treatment can be performed on the surface of the substrate (processing surfaces on both sides of one substrate or each processing surface of two substrates) while the substrate and the ion source are relatively moved, productivity is improved. High processing can be realized. Moreover, since it becomes a system which scans the surface of a board | substrate in a 1st direction with an ion beam, the ion beam of an irradiation range smaller than the area of the whole board | substrate is enough. Therefore, a relatively small ion source enables processing of a large sized substrate.

According to a second aspect of the present invention, there is provided a control method for a substrate processing apparatus including support means for supporting a substrate and a first ion source and a second ion source disposed in a positional relationship such as sandwiching the substrate. One substrate supported by the supporting means or two substrates supported by the supporting means opposite to each other, and the first and second ion sources along the surface of the substrate. Irradiating ion beams from the first and second ion sources to a process of moving relatively in a first direction, and to the processing surfaces on both sides of the one substrate or the processing surfaces of each of the two substrates; Provided is a control method of a substrate processing apparatus, comprising the step of performing control.

A third aspect of the present invention provides a film forming apparatus comprising the substrate processing apparatus and a film forming processing unit for performing a film forming process on a surface of the substrate processed by the substrate processing apparatus.

A 4th aspect of this invention is a manufacturing method of an electronic component, Comprising: The said substrate processing apparatus includes the process of processing the surface of the board | substrate in which the said electronic component is mounted, and the process of performing a film-forming process on the surface of the said board | substrate. It provides a method for producing an electronic component, characterized in that.

 According to a fifth aspect of the present invention, there is provided a method of manufacturing an electronic component, wherein one sheet supported by a support means for supporting a substrate or two sheets in which opposite surfaces of respective processing surfaces are supported by the support means are opposed to each other. A step of preparing a substrate of the substrate, and a step of relatively moving the first ion source and the second ion source disposed in a positional relationship such that the substrate is sandwiched between the substrate and the substrate in a first direction along the surface of the substrate. And irradiating an ion beam from the first and second ion sources to the processing surfaces on both sides of the one substrate or the processing surfaces of each of the two substrates, and forming a film on the surface of the substrate. Provided are a method for manufacturing an electronic component, including a step of performing a treatment.

According to this invention, surface treatment with respect to the surface of a board | substrate can be performed efficiently.

FIG. 1: is a top view which shows typically the internal structure of the inline film-forming apparatus.
FIG. 2 is a flowchart showing the operation of the film forming apparatus. FIG.
3 is a schematic view of an internal configuration of a substrate processing apparatus viewed from above.
FIG. 4: is a schematic diagram which looked at the internal structure of the substrate processing apparatus in the conveyance direction of a board | substrate. FIG.
FIG. 5: (A)-FIG. 5 (D) is a figure which shows the structure of an ion source.
FIG. 6 is a front view illustrating a bias member installed. FIG.
FIG. 7: is a figure explaining the processing nonuniformity by the collision of beams.
8A and 8B are diagrams showing examples of the ion source arrangement in the second embodiment.
9A and 9B are diagrams showing examples of the ion source arrangement in the second embodiment.
FIG. 10 is a diagram illustrating a problem when the ion beam is perpendicular to the substrate.
FIG. 11: (A)-FIG. 11 (C) is a figure which shows the example of the ion source arrangement | positioning of 3rd Embodiment.
FIG. 12 is a diagram illustrating a modification of the bias member of the third embodiment. FIG.
FIG. 13: is a figure which shows typically the structure of the board | substrate detection of 4th Embodiment.
FIG. 14 is a flowchart showing an example of ion source control in the fourth embodiment. FIG.
FIG. 15 is a diagram illustrating a modification of the configuration of the substrate detection of the fourth embodiment. FIG.
FIG. 16 is a diagram showing a state in which an ion beam is irradiated to each processing surface of two substrates. FIG.

EMBODIMENT OF THE INVENTION Hereinafter, preferred embodiment and Example of this invention are described with reference to drawings. However, the following embodiments and examples are merely illustrative of the preferred configuration of the present invention, the scope of the present invention is not limited to these configurations. In addition, in the following description, the hardware configuration, software configuration, processing flow, manufacturing conditions, dimensions, materials, shapes, and the like of the apparatus are not intended to limit the scope of the present invention to only these unless otherwise specified. .

<1st embodiment>

(Overall Configuration of Deposition Device)

FIG. 1: is a top view which showed typically the internal structure of the film-forming apparatus 1 which concerns on 1st Embodiment of this invention. The film-forming apparatus 1 pre-processes the stock chamber 11 which accommodates the board | substrate 2 to form into a film, the injection chamber 12 which heat-processes the board | substrate 2, and the process surface of the board | substrate 2. And a processing chamber 13 for performing a film forming process. The processing chamber 13 includes a pretreatment area 13A and a film formation area 13B. The pretreatment area 13A is subjected to pretreatment such as cleaning of the processing surface of the substrate 2 prior to the film formation process. The substrate processing apparatus 14 for this purpose is provided, and the sputtering apparatus 15 as a film-forming process part which performs a film-forming process on the process surface of the board | substrate 2 is provided in the film-forming area 13B. In addition, the space provided in the front end of the substrate processing apparatus 14 of 13 A of preprocessing areas is a space where the board | substrate before performing preprocessing by the substrate processing apparatus 14 waits. The film forming apparatus 1 of the present embodiment has a so-called in-line configuration in which a series of processes of heating, pre-processing and film-forming are performed while supporting and conveying the substrate 2.

2 is a flowchart showing the operation of the film forming apparatus 1. A plurality of substrates 2 are accommodated in the stock chamber 11. The board | substrate 2 used as a process object is conveyed from the stock chamber 11 to the injection chamber 12 (step S101), and is heated by the heater 121 (step S102). In this embodiment, the board | substrate 2 is heated from about 100 degreeC to about 180 degreeC by the heat processing for about 10 minutes. Then, the board | substrate 2 is conveyed from the injection chamber 12 to 13 A of preprocessing areas of the process chamber 13 (step S103). In the pretreatment area 13A, surface treatment by ion beam irradiation is performed on the processing surface of the substrate 2 by the substrate processing apparatus 14 (step S104). Next, the board | substrate 2 is conveyed to the film-forming area 13B (step S105), and the sputtering process is performed with respect to the process surface of the board | substrate 2 by the sputter apparatus 15 (step S106). The targets 151 and 152 used in the sputtering process may be the same material or different materials. As mentioned above, the film-forming process with respect to the board | substrate 2 is complete | finished. The board | substrate 2 after completion | finish of a process is discharged | emitted to the stock room 11.

The film forming apparatus 1 according to the present embodiment is applicable to, for example, various electrode formation involving pretreatment. As a specific example, the film formation of the plating seed film for FC-BGA (Flip-Chip®Ball®Grid®Array) mounting board | substrate, and the metal laminated film for SAW (Surface "Acoustic" Wa "e) device is mentioned, for example. Moreover, the film formation of the conductive hard film in the bonding part of LED, the terminal part film | membrane of MLCC (Multi-Layered Capacitor Capacitor), etc. are mentioned. In addition, the present invention can also be applied to the formation of an electronic shield film and a terminal part film of a chip resistor in an electronic component package. Although the size of the board | substrate 2 is not specifically limited, In this embodiment, the board | substrate 2 of the size of about 200 mm x 200 mm is illustrated. In addition, the material of the board | substrate 2 is arbitrary, For example, board | substrates, such as a polyimide, glass, a silicon, a metal, and a ceramic, are used. In this embodiment, the board | substrate with which the polyimide-type resin coating was applied to both surfaces of the ceramic is used.

(Substrate processing unit)

3 and 4 show the configuration of the substrate processing apparatus 14 according to the present embodiment. FIG. 3: is a schematic diagram which looked at the internal structure of the substrate processing apparatus 14 from the top, and FIG. 4 is a schematic diagram which looked at the internal structure of the substrate processing apparatus 14 from the conveyance direction of the board | substrate 2. As shown in FIG.

The substrate processing apparatus 14 of the present embodiment is an apparatus for performing cleaning or etching processing on the surface (processing surface) of a substrate by ion beam irradiation, and schematically includes a chamber 41 and a substrate support portion (support means). 42, the first ion source 43a, the second ion source 43b, the first high voltage power supply 44a, the second high voltage power supply 44b, the first bias member 45a, and the second bias member 45b), the 1st bias power supply 46a, the 2nd bias power supply 46b, and the control part 47 are provided. Reference numeral 48a denotes an ion beam radiated from the first ion source 43a, and reference numeral 48b denotes an ion beam radiated from the second ion source 43b.

The chamber 41 is an airtight container constituting the processing chamber 13, and is maintained in a vacuum state or a reduced pressure state by an exhaust pump (not shown). The entire chamber 41 is electrically grounded. The board | substrate support part 42 has the structure which can move on the rail attached to the bottom face of the chamber 41, supporting the board | substrate 2 in a vertical position so that the process surface of the board | substrate 2 may follow a perpendicular direction. The rail extends in a direction parallel to the surface of the substrate 2, and the substrate support 42 moves in a direction parallel to the surface of the substrate 2 by the driving of a motor (not shown).

The first ion source 43a and the second ion source 43b are means for irradiating an ion beam. In this embodiment, the two ion sources 43a and 43b are arrange | positioned in the positional relationship like sandwiching the board | substrate 2, and the structure which can irradiate an ion beam simultaneously to the processing surface of both sides of the board | substrate 2 is employ | adopted, have. Specifically, the first ion source 43a irradiates an ion beam to the first surface 20a of the substrate 2 (here, the surface on the left hand side is called the first surface 20a toward the conveyance direction). The second ion source 43b irradiates an ion beam to the second surface 20b of the substrate 2 (here, the surface on the right hand side is called the second surface 20b in the conveying direction). In addition, the distance between the ion source and the substrate is set to about 100 to 200 mm. The first high voltage power supply 44a and the second high voltage power supply 44b are power sources for applying an anode voltage (˜kV) to the first ion source 43a and the second ion source 43b, respectively.

The first bias member 45a is a member for correcting (smoothing) the etching distribution of the ion beam of the first ion source 43a and is disposed to surround the ion beam. The first bias member 45a is fixed to the inner wall of the chamber 41 via the insulating spacer, and a bias of about several tens of V is applied from the first bias power supply 46a. The second bias member 45b is a member for correcting (smoothing) the etching distribution of the ion beam of the second ion source 43b. Since the structure is the same as that of the 1st ion source 43b, repeated description is abbreviate | omitted.

The first ion source 43a and the second ion source 43b have the same basic structure (although different arrangements). Therefore, the description common to both is also referred to simply as "ion source 43" without distinguishing both. Similarly, when it is not necessary to distinguish between the configuration on the first surface 20a side or the configuration on the second surface 20b side, the "high voltage power supply 44", the "bias member 45", and the "bias power supply" (46) ".

The control part 47 is an apparatus for controlling the operation of each part of the substrate processing apparatus 14. Specifically, the controller 47 controls the movement of the substrate support 42, the control of the exhaust pump (not shown), the control of the high voltage power supply 44 (on / off of the ion source 43), and the bias power supply 46. Control and the like.

(Ion source)

With reference to FIG. 5A-FIG. 5C, the detailed structure of the ion source 43 is demonstrated. FIG. 5A is a side view of the ion source 43, FIG. 5B is a front view showing a beam irradiation surface (cross section) of the ion source 43, and FIG. 5C is an ion source ( It is AA sectional drawing of 43).

The ion source 43 is roughly comprised with the cathode 50, the anode 51, and the magnet 52. As shown in FIG. In this embodiment, the cathode 50 also serves as the case of the ion source 43. The cathode 50 and the anode 51 are each formed of SUS, and both are electrically insulated. The cathode 50 is electrically grounded by being fixed to the chamber 41. On the other hand, the anode 51 is connected to the high voltage power supply 44. In this configuration, when high pressure is applied from the high voltage power supply 44 to the anode 51, the ion beam is emitted from the exit opening provided in the beam irradiation surface 55 of the case (cathode 50). As the principle of the ion source 43, there are a type in which gas is introduced from the back side of the case to generate ions inside the case, and a type in which atmospheric gases present on the outside of the case are ionized. Argon gas, oxygen gas, nitrogen gas, etc. can be used as gas.

The ion source 43 of the present embodiment has a beam irradiation surface 55 having an elongated shape (line shape or track shape) of about 250 mm × about 70 mm so that the exit opening has a long length direction and a short length direction. Have. And the ion source 43 is arrange | positioned so that the long longitudinal direction of an emission opening may cross | intersect with the conveyance direction of the board | substrate 2. As shown in FIG. By using such a long vertical ion source 43, the ion beam is irradiated to the whole longitudinal direction (direction orthogonal to a conveyance direction) of the board | substrate 2. As shown in FIG. Therefore, the beam can be irradiated to the whole surface of the board | substrate 2 by one beam scan along a conveyance direction, and the surface treatment can be speeded up (productivity improvement).

By the way, FIG. 5D has shown the etching distribution (intensity distribution) of the long longitudinal direction of the ion beam radiate | emitted from the ion source 43. As shown in FIG. As shown in the figure, the intensity in the long longitudinal direction of the ion beam is not uniform, and depending on the magnetic field design of the ion source 43, the intensity of the central portion becomes large, such as the dotted line 56, or the solid line 57. A distribution is obtained such that the strength of the central portion is reduced as shown in FIG. If there is a bias in the etching distribution as shown in Fig. 5D, unevenness occurs in the etching amount of the substrate 2, which is not preferable. Therefore, it is preferable to correct the bias of the etching distribution by the bias member 45.

(Bias member)

6 is a front view illustrating a state in which the bias member 45 is installed. As shown in the figure, the bias member 45 is formed in a rectangular frame and is provided to surround the ion beam emitted from the beam irradiation surface 55 of the ion source 43 (beam irradiation surface 55 and The bias member 45 is disposed with a gap of about several millimeters). The bias member 45 may be formed of any material as long as it is a conductive material. Typically, a metal material may be used, and SUS or the like may be preferably used in consideration of the rigidity of the mold. In this embodiment, the bias member 45 is formed by folding and bending the SUS board of about 1 mm of plate | board thickness.

Here, in the case where the etching distribution of the ion source 43 is the same as the dotted line 56 in FIG. 5D, a positive bias is applied to the bias member 45 so as to repel the ion beam (plus ions). As a result, the beam at the end converges and the beam intensity at the end increases, so that the etching distribution is smoothed. On the other hand, when the etching distribution of the ion source 43 is the same as the solid line 57 in FIG. 5D, a negative bias may be applied to the bias member 45. As a result, the beam at the end diverges and the beam intensity at the end becomes low, so that the etching distribution is smoothed. In this way, by biasing the etching distribution of the ion beam by the bias member 45, non-uniformity in the etching amount can be suppressed and uniform surface treatment can be realized.

(Flow of surface treatment)

The detail of surface treatment (step S104) by ion beam irradiation is demonstrated. When the board | substrate 2 is conveyed to the preprocessing area 13A of the process chamber 13, the control part 47 controls the 1st high voltage power supply 44a and the 2nd high voltage power supply 44b, and the 1st ion source 43a is carried out. ) And beam irradiation of the second ion source 43b. In that state, the control part 47 moves the board | substrate support part 42 at a constant speed, and makes the board | substrate 2 pass through an ion beam.

By this method, an ion beam is irradiated to both the 1st surface 20a and the 2nd surface 20b of the board | substrate 2, and both surfaces of the board | substrate 2 can be surface-treated simultaneously. Therefore, compared with the method of processing both surfaces of the fixed substrate as in the prior art, a process with high productivity can be realized. In addition, by employing beam scanning as in the present embodiment, the entire substrate can be processed with an ion beam having an irradiation range smaller than the area of the substrate 2, so that the ion source 43 is downsized, and further, the entire apparatus is downsized. Can be planned. In addition, as in the present embodiment, the substrate 2 is supported in a posture in which the processing surface of the substrate 2 is in the vertical direction, and the etching is performed by employing a configuration in which the ion beam is irradiated in the horizontal direction with respect to the processing surface. Since the particles crushed by the particles fall due to gravity and do not remain on the processing surface of the substrate 2, there is an advantage in that processing irregularities due to the residual particles can be prevented.

<2nd embodiment>

When the method of irradiating an ion beam from both sides of the board | substrate 2 is employ | adopted like 1st Embodiment moving, there exists a possibility that the process nonuniformity by the collision of beams may arise. For example, as shown in FIG. 7, after the substrate 2 passes the irradiation range of the ion beam, the ion beam 48a of the first ion source 43a and the ion beam of the second ion source 43b. If 48b comes into direct contact, the plasma in the collision portion 70 becomes unstable, and the surrounding plasma is also affected, causing variation in the etching amount on the substrate surface. In order to solve such a problem, 2nd Embodiment is characterized by the point which devised arrangement | positioning of the 1st ion source 43a and the 2nd ion source 43b so that the process nonuniformity by the collision of beams may be reduced. Have

FIG. 8A is a diagram illustrating an example of an ion source arrangement according to the second embodiment. In FIG. 8A, an imaginary surface 80 positioned between the first ion source 43a and the second ion source 43b and parallel to the conveyance direction of the substrate 2 is considered. In the case of this example, the virtual surface 80 passes through the intermediate point of the thickness direction of the board | substrate 2, and becomes a surface parallel to the board | substrate 2. As shown in FIG. In addition, the first cross section 81 and the region where the ion beam of the second ion source 43b intersects the region where the ion beam of the first ion source 43a intersects the virtual surface 80 intersect each other. Is referred to as a second cross-section 82. The first end face 81 shows the irradiation area in the imaginary plane 80 of the ion beam of the first ion source 43a, and the second end face 82 shows the imaginary beam of the ion beam of the second ion source 43b. The irradiation area on the surface 80 is shown (also, the ion beam may have a diffusion strictly, but since the purpose here is to define the geometrical arrangement of the ion source, the ion beam is parallel without diffusion). It is assumed that the outer edge of the beam (the unfolded portion) has a lower strength than the central portion of the beam, and even if the outer edges of the beam collide with each other, the impact is small. none). FIG. 8B is a diagram schematically showing the virtual surface 80 and the end faces 81 and 82 of each ion beam.

In the present embodiment, as shown in FIG. 8B, the first ion source 43a and the second end surface 82 are positioned at different positions on the virtual surface 80. The second ion source 43b is disposed. By arranging the two ion sources 43a and 43b in this way, the collision range of the beams in the state in which the board | substrate 2 does not exist can be made small. Therefore, the processing nonuniformity resulting from the collision of beams (compared with the state of FIG. 7) can be reduced.

Here, the overlap between the first end face 81 and the second end face 82 is preferably as small as possible. This is because the smaller the collision range between the beams, the higher the effect of reducing the processing nonuniformity. For example, the overlapping area between the first end face 81 and the second end face 82 is preferably smaller than half of the area of the first end face 81, more preferably smaller than 1/4, Even more preferably less than 1/8. And, most preferably, a configuration in which the first end face 81 and the second end face 82 are spaced apart (ie, not overlapping at all) on the virtual surface 80 is good. 9A and 9B are examples of an ion source arrangement in which the first end face 81 and the second end face 82 are completely separated from each other. According to this configuration, since the collision between beams does not occur even in a state where the substrate 2 does not exist, the processing unevenness due to the collision between the beams as described above does not occur and high quality surface treatment can be realized. Can be.

<Third embodiment>

When the ion beam 48 is perpendicular to the substrate 2 as shown in FIG. 10, the particles 100 shaved by etching scatter in the direction of the ion source 43 and adhere to the ion source 43. It may be discarded. 3rd Embodiment considered such a subject, and is characterized by the structure for suppressing adhesion of the particle | grains 100 which scattered from the board | substrate 2. As shown in FIG.

FIG. 11A is a diagram illustrating an example of an ion source arrangement according to the third embodiment. As can be seen from the figure, in this embodiment, the ion sources 43a and 43b are inclined with respect to the substrate 2 (that is, the ion beam is non-vertically perpendicular to the substrate 2). By adopting such an arrangement, the particles 110 are scattered in the direction opposite to the direction of incidence of the ion beam, so that adhesion of the particles 110 to the ion sources 43a and 43b can be suppressed. Further, by applying the ion beam obliquely to the substrate 2, there is an additional effect that the etching amount can be improved, that is, the efficiency of the surface treatment can be improved. In addition, when the ion beam is directed toward the film formation area 13B as shown in FIG. 11A, scattered particles 110 enter the injection chamber 12 or the injection chamber 12 and the processing chamber 13. There is also an effect that it can be prevented from adhering to structures (doors) in between.

Further, even if the ion beam is inclined to the substrate 2 in any direction, it is possible to obtain the effects of preventing the particles from adhering and improving the surface treatment efficiency. However, when using the line-shaped ion source 43 like this embodiment, it is preferable to incline an ion beam so that the ion source 43 may be rotated about the axis of a long longitudinal direction. In other words, the plane unfolded in the axis of the ion beam and the conveying direction (axis of the substrate 2) is perpendicular to the surface of the substrate 2, and the ion beam is in relation to the surface of the substrate 2. The ion beam may be inclined so as to contact non-vertically. This is because by tilting in this way, it is possible to suppress the deviation of the beam intensity irradiated onto the surface of the substrate 2 and to suppress the processing unevenness.

11B is another example of the ion source arrangement. In FIG. 11B, the ion beam is directed to the injection chamber 12 side. Also in this configuration, as in FIG. 11A, the effect of preventing the adhesion of particles and improving the efficiency of surface treatment can be obtained. In addition, there is an effect that the scattering particles 110 can be prevented from invading the film formation area 13B or adhering to the target 151.

11C is another example of the ion source arrangement. In FIG. 11C, the first ion source 43a and the second ion source 43b are inclined in the reverse direction. Also in this configuration, as in FIG. 11A, the effect of preventing the adhesion of particles and improving the efficiency of surface treatment can be obtained.

12 is a modification of the bias member. In this example, a part of the bias member 45 is extended and provided to cover an area where particles can scatter by the extended part. In the case of the example of FIG. 12, since the ion source 43 is inclined so that an ion beam may face the downstream side of a conveyance direction, the plate-shaped extended installation part 120 is provided in the conveyance direction downstream of the bias member 45. FIG. Doing. By this structure, the bias member 45 also plays a role as a so-called anti-stick member, and can prevent particles from adhering to the structure in the substrate processing apparatus 14.

<4th embodiment>

With reference to FIG. 13 and FIG. 14, 4th Embodiment is described. In the present embodiment, when the substrate is not present in the beam irradiation range, the irradiation of the ion beam is stopped to prevent the occurrence of collision between the beams. FIG. 13: is a figure which shows typically the structure of the board | substrate detection in the substrate processing apparatus 14 of 4th Embodiment, and FIG. 14 is a flowchart which shows an example of the ion source control of 4th Embodiment.

As shown in FIG. 13, four position sensors for detecting the presence or absence of the board | substrate 2 (or the board | substrate support part 42) are provided in the conveyance path | route of the board | substrate 2 in 13 A of preprocessing areas. have. The position sensor 131 is a sensor for turning on the first ion source 43a, and the position sensor 132 is a sensor for turning on the second ion source 43b. In addition, the position sensor 133 is a sensor for turning off the first ion source 43a, and the position sensor 134 is a sensor for turning off the second ion source 43b.

It is assumed that both the first ion source 43a and the second ion source 43b are turned off at the time (initial state) in which the substrate 2 is carried into the pretreatment area 13A. When the control part 47 detects the front end of the board | substrate 2 by the 1st position sensor 131 (step S140), only the 1st ion source 43a is turned on (step S141). At this time, since the second ion source 43b is off, collision of the ion beam does not occur. Next, when the control part 47 detects the front end of the board | substrate 2 by the 2nd position sensor 132 (step S142), the 2nd ion source 43b is turned on (step S143). At this time, since the ion beam from the first ion source 43a is blocked by the substrate 2 and does not leak to the second ion source 43b side, collision of the ion beam does not occur.

After that, when the third position sensor 133 detects the front end of the substrate 2 (step S144), the control unit 47 turns off the first ion source 43a (step S145). Furthermore, the control part 47 turns off the 2nd ion source 43b when it detects the front end of the board | substrate 2 with the 4th position sensor 134 (step S146). By this stop control, since the first ion source 43a stops before the rear end of the substrate 2 is out of the beam irradiation range of the second ion source 43b, collision of the ion beam does not occur.

According to the structure of this embodiment, the influence on the surface treatment by the collision of beams can be prevented as much as possible. In addition, since unnecessary beam irradiation is eliminated, it is also effective in reducing power consumption and preventing deterioration of the ion source. Furthermore, by stopping the beam irradiation when the substrate 2 is not present, the ion beam does not come into contact with the structure in the substrate processing apparatus 14, and therefore, it is effective in preventing deterioration of the structure in the substrate processing apparatus 14. .

In addition, although four position sensors were provided in 4th Embodiment, as shown in FIG. 15, two position sensors, the position sensor 151 for turning on the ion source 43, and the position sensor 152 for turning off are provided. You may make it the structure to make it. In this case, the control part 47 turns on both the 1st ion source 43a and the 2nd ion source 43b at the timing which detected the front-end | tip of the board | substrate 2 with the 1st position sensor 151. FIG. do. In addition, two ion sources 43a and 43b are simultaneously turned off at the timing when the front end of the substrate 2 is detected by the second position sensor 152. Even with such a configuration and control, unnecessary beam irradiation can be reduced, so that effects such as reduction of power consumption and prevention of deterioration of the structural portion in the ion source or the substrate processing apparatus 14 can be obtained.

<Others>

Although preferred specific examples of the present invention have been described with reference to the first to fourth embodiments, the scope of the present invention is not limited to these specific examples, and any modification can be made within the scope of the technical idea. For example, the configurations and control contents described in the first to fourth embodiments may be combined with each other as long as there is no technical contradiction.

In addition, in the said embodiment, although the bias member 45 was provided in front of the ion source 43, if the intensity distribution of an ion beam does not have any problem, the bias member 45 does not need to be provided. In addition, in the said embodiment, although the structure which supports one board | substrate to the board | substrate support part 42 and irradiates an ion beam to both surfaces of one board | substrate was illustrated, the substrate processing apparatus of this invention is a board | substrate of one board | substrate. Not only the use which processes both process surfaces simultaneously, but also the use which processes each process surface of two board | substrates simultaneously. For example, as shown in FIG. 16, the processing surfaces 20a and 20b of each of the substrates 2a and 2b face the outside (the ion source side), and the back surfaces (the opposite surfaces of the processing surface) 21a and 21b. Two board | substrates 2a and 2b are provided in the board | substrate support part 42 so that this may oppose, and one process surface 20a of one board | substrate 2a and one process surface 20b of the other board | substrate 2b will be provided. You may irradiate an ion beam to two surfaces of. This is sufficient to change the structure of the substrate holder of the substrate support 42. In addition, in FIG. 16, although two board | substrates 2a and 2b are provided in parallel, if each process surface 20a and 20b is facing the corresponding ion source side, two board | substrates 2a and 2b will be provided. It may be provided in the board | substrate support part 42 in this non-parallel state. In addition, in the said embodiment, although the board | substrate was vertically supported by the board | substrate support part 42, the support posture of a board | substrate is not limited to this. For example, the substrate may be supported laterally or may be supported obliquely. In addition, in the said embodiment, although the structure which fixed the ion source 43 and moving the board | substrate support part 42 is fixed, the board | substrate support part 42 may be fixed and the ion source 43 may be moved, and the board | substrate support part 42 is carried out. And both of the ion source 43 may be moved. In addition, in the said 3rd Embodiment, although the two ion source 43 was arrange | positioned inclined together, the structure which only inclines either one may be sufficient.

In addition, in this specification, the term "parallel" means only mathematically exact parallelism (i.e., an angle between two planes or lines is 0 degrees) unless otherwise stated or technical limitations or contradictions exist. Rather, it includes a state where there is a predetermined angle (eg, less than 30 degrees) between two faces or lines. Similarly, the term "vertical" or "orthogonal" refers not only to a state where the angle between two planes or lines is 90 degrees, but also a state that is deviated only by a predetermined angle from 90 degrees (for example, in a range of 90 degrees ± 30 degrees). Include. Similarly, the term "vertical" includes not only a state coinciding with the gravity direction, but also a state deviated by a predetermined angle from the gravity direction. Similarly, the term "horizontal" includes not only a state intersecting the gravity direction by 90 degrees, but also a state deviating by a predetermined angle from 90 degrees.

1: deposition device
2: substrate
14: substrate processing apparatus
42: substrate support
43, 43a, 43b: ion source
45, 45a, 45b: bias member
47: control unit
48, 48a, 48b: ion beam

Claims (17)

Support means for supporting a substrate,
A first ion source and a second ion source disposed in a positional relationship such as sandwiching the substrate;
One substrate supported by the supporting means or two substrates supported by opposite supporting surfaces of the respective processing surfaces by the supporting means, and the first and second ion sources, Control to irradiate ion beams from the first and second ion sources to the processing surfaces on both sides of the one substrate or the processing surfaces of each of the two substrates while moving relatively in the first direction according to the first direction. Control means for
Substrate processing apparatus comprising a. The method of claim 1,
Considering an imaginary plane positioned between the first ion source and the second ion source and parallel to the first direction,
The first area so that the irradiation area in the virtual plane of the ion beam of the first ion source and the irradiation area in the virtual plane of the ion beam of the second ion source are different positions on the virtual plane. And a second ion source is disposed. The method of claim 2,
The first and second ions such that a cross section in the imaginary plane of the ion beam of the first ion source and a cross section in the imaginary plane of the ion beam of the second ion source are spaced apart on the imaginary plane. The substrate processing apparatus characterized by the source arrange | positioned. The method according to any one of claims 1 to 3,
The exit openings of the first and second ion sources include a long longitudinal direction and a short longitudinal direction, and the long longitudinal direction is arranged to intersect the first direction. The method of claim 4, wherein
The width | variety of the said longitudinal direction of a said 1st and 2nd ion source is larger than the width | variety of the said board | substrate of the direction orthogonal to a said 1st direction. The method according to any one of claims 1 to 5,
At least one of the said 1st and 2nd ion source is arrange | positioned so that an ion beam may irradiate non-vertically with respect to the said board | substrate. The method according to any one of claims 1 to 5,
The exit openings of the first and second ion sources comprise a long longitudinal direction and a short longitudinal direction,
At least one of the first and second ion sources is arranged such that the long longitudinal direction of the ion beam irradiates the substrate perpendicularly, and the short longitudinal direction of the ion beam irradiates non-vertically with respect to the substrate. There is a substrate processing apparatus. The method according to any one of claims 1 to 7,
And a biasing member arranged to surround the ion beam emitted from each of the first and second ion sources, and to which a bias is applied. The method according to any one of claims 1 to 8,
Detecting means for detecting the presence or absence of the substrate,
The control means turns off the irradiation of the ion beam from the first ion source when it is determined that the substrate is not present in the irradiation range of the ion beam of the first ion source based on the detection result of the detection means. And when it is determined that the substrate is not present in the irradiation range of the ion beam of the second ion source based on the detection result of the detection means, the irradiation of the ion beam from the second ion source is turned off. The substrate processing apparatus made into it. The method according to any one of claims 1 to 9,
The supporting means supports the substrate so that the processing surface of the substrate is in a vertical direction. The method according to any one of claims 1 to 10,
The first and second ion sources are fixedly arranged,
And said support means is movable. Support means for supporting a substrate,
A control method of a substrate processing apparatus having a first ion source and a second ion source arranged in a positional relationship such as sandwiching the substrate therebetween,
One substrate supported by the supporting means or two substrates supported by opposite supporting surfaces of the respective processing surfaces by the supporting means, and the first and second ion sources, Relatively moving in the first direction,
Performing control of irradiating ion beams from the first and second ion sources to the processing surfaces on both sides of the one substrate or the processing surfaces of each of the two substrates;
Control method of a substrate processing apparatus comprising a. The substrate processing apparatus in any one of Claims 1-12,
And a film forming processing unit for performing a film forming process on the surface of the substrate processed by the substrate processing apparatus. As a manufacturing method of an electronic component,
The process of processing the surface of the board | substrate in which the said electronic component is mounted by the substrate processing apparatus in any one of Claims 1-12,
Process of forming a film on the surface of the substrate
Method of manufacturing an electronic component comprising a. As a manufacturing method of an electronic component,
Preparing a single substrate supported by a supporting means for supporting the substrate or two substrates in which opposite surfaces of the respective processing surfaces are supported by the supporting means to face each other;
A first ion source and a second ion source disposed in a positional relationship such that the substrate is sandwiched therebetween, and the substrate is relatively moved in a first direction along a surface of the substrate;
Irradiating ion beams from the first and second ion sources to the processing surfaces on both sides of the one substrate or the processing surfaces of each of the two substrates;
Process of forming a film on the surface of the substrate
Method of manufacturing an electronic component comprising a. The method of claim 15,
The said support means supports the said board | substrate so that the said process surface of the said board may follow a perpendicular direction. The method according to claim 15 or 16,
The said board | substrate is a board | substrate with a resin coating on the surface of a ceramic, The manufacturing method of the electronic component characterized by the above-mentioned.

Images