JPH0293073A - Sheet plasma-type cvd device - Google Patents

Abstract

PURPOSE:To form a uniform thin film on a large-area substrate with good adhesion by arranging pallets on which the substrate is set in a treating chamber in opposition to each other, and providing a means for producing vertically long sheet plasma in the space. CONSTITUTION:A hollow discharge cathode 11, an intermediate electrode 12, a permanent magnet 13, a plasma control coil 14a, and a gas inlet pipe 15 are successively set on the ceiling of the treating chamber 1 from the upper part. An exhaust port 6, a plasma control coil 14b, an anode 16, and a permanent magnet 17 are arranged on the lower side. The pallets 2 with the substrate 3 set on their inner surface are vertically arranged in opposition to each other. A voltage is impressed on the hollow discharge cathode, an ionized gas is supplied, and columnar plasma is produced. The plasma is expanded and contracted by the magnet 13 to form sheet plasma. The outward expansion of the sheet plasma is controlled by the plasma control coils 14a and 14b, and the plasma is focused on the anode. When a raw gas is supplied into the sheet plasma, the raw gas is ionized over the whole length of the pallet 2.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a sheet plasma 20VD device.

(Conventional technology) Conventionally, as a device for attaching a homogeneous thin film to a large-area substrate,
A vertical double-sided plasma device shown in FIG. 2 is known.

In the figure, l is a processing chamber, 2 is a pallet, 3 is a substrate, 4 is a raw material gas supply pipe, 5 is a high frequency electrode, 6 is an exhaust pipe,
7 is a heater.

In the processing chamber I, high frequency electrodes 5 are arranged facing each other. A large number of small holes are provided on the opposing surface of the high-frequency electrode 5.5, so that the source gas supplied from the source gas supply pipe 4 is discharged into the discharge space. In addition, in order to apply a homogeneous film to the substrate 3, a pallet 2
And the substrate 3 is configured to be heated by a heater 6.

Other conventional examples include, for example, Japanese Patent Application Laid-Open No. 61-284
579, JP-A-61-119676, JP-A-59-88820, etc. are known.

The method disclosed in JP-A No. 61-284579 concentrates plasma on the substrate and supplies raw material gas to the substrate portion, and the method disclosed in JP-A No. 61-119676 and JP-A-5
The method disclosed in Japanese Patent No. 9-88820 uses sheet plasma in combination with laser light or molecular beam.

(Problem to be Solved by the Invention) However, in the above-mentioned vertical plasma apparatus, since the plasma is high-frequency plasma, the plasma density is low and the raw material gas is not sufficiently ionized. Not only is it not possible to obtain a film, but the film formation rate is slow. Also,
A high frequency electrode is required for each substrate row, which is expensive.

The method disclosed in Japanese Patent Application Laid-Open No. 61-284579 concentrates plasma on the substrate and supplies raw material gas to the substrate, and the ionization rate of the supplied gas is low and the film formation rate is slow, making production difficult. Bad sex.

Furthermore, JP-A-61-119676, JP-A-59
The method disclosed in Japanese Patent No. 88820 requires equipment for generating sheet plasma and laser light or molecular beams, and has problems such as being expensive.

(Means for Solving the Problems) In order to solve the following two problems, the present invention provides a cytoplasma 2〇VD apparatus in which pallets on which substrates are mounted are disposed vertically facing each other in a processing chamber, and the pallets are At the same time, a hollow discharge cathode, an intermediate electrode, and a permanent magnet are arranged in the above order from above at a position approximately in the middle of the pallet on the ceiling of the processing chamber, and on the cathode side and below the pallet. Electromagnetic coils are disposed on the anode side and sheet plasma is formed in the space between the pallets, while a raw material gas introduction pipe is disposed near the cathode.

(Example) An embodiment according to the present invention will be described with reference to FIG.

In the figure, on the ceiling of the processing chamber I, from above, there is a Porrow discharge cathode II, an intermediate electrode 12. Permanent magnet 13. Plasma control coil 14a
, a gas introduction pipe 15 are provided in this order.

On the other hand, an exhaust port 6 and a plasma control coil 14b are provided on the lower side, and an anode +6. A permanent magnet 17 is arranged.

Furthermore, in the processing chamber 1, a pallet 2 having a substrate 3 attached to its inner surface is arranged vertically facing the sheet plasma generated as described below.

Since it has the above configuration, now exhaust air from the exhaust port 6,
The inside of the processing chamber 1 is brought into a vacuum state. Then, when a voltage is applied to the hollow discharge cathode 11 and an ion gas (r, gas, etc.) is supplied, a cylindrical plasma is generated. This cylindrical plasma is expanded and contracted by the permanent magnet 13 and is Forms a sheet plasma with width, thickness, and density of .

Then, this sheet plasma is generated by the plasma control coil 1
4a and 14b prevent it from spreading outward and converge on the anode.

Note that the intermediate electrode 12 includes a permanent magnet 12a and a coil 12b.
It creates a pressure difference between the cathode region and the anode region, prevents backflow of ions from the anode region, and prevents damage to the cathode.

Further, when raw material gas such as 5io4 is supplied from the gas introduction pipe 15 to the sort plasma, this raw material gas is ionized by the sort plasma, but the ionization is carried out along the entire length of the pallet 2. A thin film such as an a-9i film that is uniform and has good adhesion can be formed on the substrate 3 having a large area.

As described above, since plasma is formed in the vertical direction from the hollow discharge cathode 11 toward the anode 1G, by increasing the size of the pallet 2 in the vertical direction, it is possible to increase the passage distance of the source gas.

Note that if H2 gas is used as the ion gas, the degree of cleaning of the substrate 3 will be improved, and H2 gas as the additive gas will improve the cleaning quality of the substrate 3.
reduce the amount.

(Effects of the Invention) As is clear from the above explanation, according to the notebook plasma CVD apparatus according to the present invention, sheet plasma can be generated vertically, so that raw material gas can be ionized over a large area. Can be done.

Therefore, a film can be formed on a large area or on a plurality of substrates at once, improving productivity.

Furthermore, since the passage distance of the raw material gas can be increased, the ionization rate is increased by note plasma, a thin film with good density can be obtained, and the amount of raw material gas can be reduced.

[Brief explanation of the drawing]

FIG. 1 is a block diagram of an embodiment according to the present invention, and FIG. 2 is a block diagram of a conventional vertical double-sided plasma apparatus.
Pallet, 3... Board, 4... Gas supply pipe, 5... High frequency electrode, 6... Exhaust port, 11... Hollow discharge cathode, 12
...Intermediate electrode, 13...Permanent magnet, 14a 14h
...Plasma control coil, 15...Gas introduction pipe. Patent applicant Chugai Roko Kogyo Co., Ltd. Agent
Figure 1: Patent attorney: 1 person

Claims (1)

[Claims] (1) Pallets are arranged vertically and facing each other in the processing chamber, and the substrates are mounted on the opposing surfaces of the pallets, and a hollow discharge cathode, an intermediate electrode, and a permanent magnet are placed from above at approximately the middle of the pallets on the ceiling of the processing chamber. are arranged in the above order, and electromagnetic coils are arranged respectively on the cathode side and the anode side provided below the pallet to form a sheet plasma in the space between the pallets, while the raw material gas introduction pipe is connected. Sheet plasma type CV characterized by being installed near the cathode
D device.