JPS62287068A - Ion beam vapor deposition device - Google Patents
Ion beam vapor deposition deviceInfo
- Publication number
- JPS62287068A JPS62287068A JP13241786A JP13241786A JPS62287068A JP S62287068 A JPS62287068 A JP S62287068A JP 13241786 A JP13241786 A JP 13241786A JP 13241786 A JP13241786 A JP 13241786A JP S62287068 A JPS62287068 A JP S62287068A
- Authority
- JP
- Japan
- Prior art keywords
- evaporated
- vapor deposition
- evaporation
- ion
- sources
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 27
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 12
- 238000001704 evaporation Methods 0.000 claims abstract description 69
- 230000008020 evaporation Effects 0.000 claims abstract description 65
- 150000002500 ions Chemical class 0.000 claims abstract description 59
- 239000000463 material Substances 0.000 claims abstract description 37
- 239000000428 dust Substances 0.000 abstract description 8
- 238000010891 electric arc Methods 0.000 abstract description 7
- 238000012423 maintenance Methods 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 description 16
- 230000008021 deposition Effects 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 230000032258 transport Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000011364 vaporized material Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
〔産業上の利用分野〕
この発明は、金属シートの表面に薄膜を形成するイオン
ビーム蒸着装置に関するものである。Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] This invention relates to an ion beam evaporation apparatus for forming a thin film on the surface of a metal sheet.
従来より、金属シートの表面に薄膜を形成してシート表
面の改質（硬度向上、耐摩耗性向上９耐食性向上、摩擦
係数低減２色調光沢改善）を行っている。Conventionally, a thin film is formed on the surface of a metal sheet to modify the sheet surface (improve hardness, improve abrasion resistance, improve corrosion resistance, reduce friction coefficient, and improve two-tone gloss).
このような薄膜の形成は、第３図に示すイオンビーム蒸
着装置により行っている。図において、４０は鋼板等の
金属シートからなる被蒸着部材であり、真空槽４２内を
ローラ４４により矢印方向に水平移動する。また、真空
槽４２内には、被落着部材４０の下方において、被蒸着
部材４０の搬送方向に蒸発源４６．４８とイオン源５０
．５２とが交互に並んで設けられている。蒸発源４６゜
４８は、電子銃（図示セず）から電子ビームを照射して
容器４６ａ、４８ａ内の蔑着材料（例えばＴＩ）５４を
電子ビーム加熱することで蒸着材料５４を蒸気化させる
ものである。また、イオン源５０．５２は、例えばＮ等
の元素のイオンを被蒸着部材４０に向けて加速して照射
し、例えばイオン注入を行うものである。Formation of such a thin film is performed using an ion beam evaporation apparatus shown in FIG. In the figure, reference numeral 40 denotes a member to be deposited made of a metal sheet such as a steel plate, and is moved horizontally within the vacuum chamber 42 by rollers 44 in the direction of the arrow. Further, in the vacuum chamber 42, below the member to be deposited 40, an evaporation source 46, 48 and an ion source 50 are arranged in the conveying direction of the member to be deposited 40.
．． 52 are arranged alternately. The evaporation sources 46 and 48 evaporate the evaporation material 54 by irradiating an electron beam from an electron gun (not shown) and heating the evaporation material (for example, TI) 54 in the containers 46a and 48a with the electron beam. It is. Further, the ion sources 50 and 52 accelerate and irradiate ions of an element such as N toward the member 40 to be vapor-deposited, thereby performing, for example, ion implantation.
次に、被蒸着部材４０の下面に薄膜を形成する動作を説
明する。 ２゜
■ まず、蒸発源４６より蒸発した層着材料が被蒸着部
材４０の下面に蒸着し、厚さ３００人程度の蒸着層を形
成する。Next, the operation of forming a thin film on the lower surface of the member to be deposited 40 will be explained. 2°■ First, the layering material evaporated from the evaporation source 46 is deposited on the lower surface of the member 40 to be evaporated, forming a evaporated layer with a thickness of about 300 layers.
■ 次に、イオン源５０より■で形成した蒸着層に向け
て３０ＫｅＶ程度のエネルギをもったＮイオンを照射し
て蒸着層に注入し、被蒸着部材４゜の下面にＴＩＮと被
蒸着部材４０の構成原子とが混合したミキシング層を形
成する。(2) Next, N ions with an energy of about 30 KeV are irradiated from the ion source 50 toward the vapor deposition layer formed in (2) and injected into the vapor deposition layer. A mixing layer is formed in which the constituent atoms are mixed.
■ さらに、■、■と同様にして、蒸発源４８による蒸
着とイオン源５２による低エネルギ（数ＫｅＶ）のイオ
ン注入とにより■で形成したミキシング層上にさらにＴ
ｉＮ層を形成し、被蒸着部材４０に所望の厚さのＴＩＮ
薄膜を形成する。■Furthermore, in the same manner as in ■ and ■, T is further deposited on the mixing layer formed in ■ by evaporation using the evaporation source 48 and low energy (several KeV) ion implantation using the ion source 52.
Form an iN layer and apply TIN to a desired thickness on the member 40 to be evaporated.
Forms a thin film.
シカシ、このように構成されたイオンビーム蒸着装置に
よると、蒸発源４６．４８およびイオン源５ｏ、５２が
水平に搬送される被蒸着部材４゜の下方に配設されてい
るので、蒸発源４６．４８から苺発した蒸着材料５４が
イオン源５０．５２内にごみとして落下し、イオン−５
５ｏ、ｓ２が汚れやすく、イオン源５０．５２の清浄に
手間がかかるという問題があった。また、被蒸着部材４
０を水平に搬送するので、蒸発源４６．４８ならびにイ
オン源５０．５２の上方における被蒸着部材４０がたる
まないように、可能な限り蒸発源４６ならびにイオン源
５２の前後におけるローラ４４の間隔を狭くする必要が
ある。そのため、蒸発源４６゜４８から蒸発した蒸着材
料５４がローラ４４に付着し、ローラ４４の清浄にも手
間がかかるという問題があった。According to the ion beam evaporation apparatus configured in this manner, the evaporation sources 46 and 48 and the ion sources 5o and 52 are disposed below the member to be evaporated 4° that is transported horizontally. The vapor deposition material 54 emitted from .48 falls into the ion source 50.52 as dust, and the ions -5
There was a problem in that the ion sources 50 and 52 were easily contaminated and it took time and effort to clean the ion sources 50 and 52. In addition, the member to be evaporated 4
0 is conveyed horizontally, the distance between the rollers 44 before and after the evaporation source 46 and the ion source 52 is set as much as possible so that the member 40 to be evaporated does not sag above the evaporation source 46, 48 and the ion source 50, 52. It needs to be narrowed. Therefore, there was a problem in that the vapor deposition material 54 evaporated from the evaporation source 46.degree. 48 adhered to the roller 44, and cleaning the roller 44 took time and effort.
この発明の目的は、イオン源に蒸発した蒸着材料がごみ
として落下しにくく、かつ搬送手段にも付着しにくくな
り、保守が容易に行なえるイオンビーム蒸着装置を提供
することである。An object of the present invention is to provide an ion beam evaporation apparatus in which evaporation material evaporated into an ion source is less likely to fall as dust and adhere to a conveyance means, and which can be easily maintained.
この発明のイオンビーム蒸着装置は、真空槽と、この真
空槽内でシート状の被蒸着部材を垂直に搬送する搬送手
段と、前記真空槽内において前記被蒸着部材の側方に設
けられ蒸着材料をアーク放電により蒸発させてイオン化
する蒸発源と、前記真空槽と前記被蒸着部材との間にバ
イアス電圧を印加し前記イオン化した蒸着材料を前記被
蒸着部材に引付けるバイアス電源と、前記蒸発源の前記
被蒸着部材の搬送方向下手側において前記真空槽内に設
けられ前記被蒸着部材の表面に蒸着した蒸着層にイオン
を照射するイオン源とを備えたものである。The ion beam evaporation apparatus of the present invention includes a vacuum chamber, a conveying means for vertically conveying a sheet-like member to be evaporated in the vacuum chamber, and a evaporation material provided on the side of the member to be evaporated in the vacuum chamber. an evaporation source that evaporates and ionizes by arc discharge; a bias power source that applies a bias voltage between the vacuum chamber and the member to be evaporated to attract the ionized evaporation material to the member to be evaporated; and the evaporation source. and an ion source that is provided in the vacuum chamber on the downstream side in the conveyance direction of the member to be vapor-deposited and irradiates the vapor deposition layer deposited on the surface of the member to be vapor-deposited with ions.
この発明の構成によれば、被蒸着部材を垂直に搬送して
被蒸着部材の側方に蒸発源とイオン源を配置したので、
蒸発した蒸着材料がごみとしてイオン源に落下しにくく
なる。また、被蒸着部材を垂直に搬送するようにしたの
で、被蒸着部材がたるんだすせず、蒸発源ならびにイオ
ン源の前後における搬送手段の間隔を大きく取ることが
できる。According to the configuration of the present invention, the evaporation source and the ion source are arranged on the sides of the evaporation target member while the evaporation target member is conveyed vertically, so that
Evaporated deposition material is less likely to fall into the ion source as dust. Furthermore, since the member to be evaporated is conveyed vertically, the member to be evaporated does not sag, and the distance between the conveying means before and after the evaporation source and the ion source can be increased.
したがって蒸発源から蒸発した蒸着材料が搬送手段に付
着しにくくなる。このように、蒸発した蒸着材料がごみ
としてイオン源に落下しにくく、かつ搬送手段にも付着
しにくくなり、保守が容易に行なえる。Therefore, the evaporation material evaporated from the evaporation source is less likely to adhere to the conveying means. In this way, the evaporated deposition material is less likely to fall into the ion source as dust, and is also less likely to adhere to the transport means, making maintenance easier.
しかも、蒸着材料の熔融は、アーク放電によって行うの
で、蒸着材料は放電した部分しか熔融しない。したがっ
て、蒸発源を被蒸着部材の側方に配置しても蒸発材料が
こぼれたりしない。Moreover, since the vapor deposition material is melted by arc discharge, only the portion of the vapor deposition material where the discharge occurs is melted. Therefore, even if the evaporation source is placed on the side of the member to be evaporated, the evaporation material will not spill.
この発明の一実施例を第１図および第２図に基づいて説
明する。このイオンビーム蒸着装置は、第１図に示すよ
うに、真空槽ｌＯ内にシート状の被蒸着部材１４を搬送
手段１２により垂直に搬送し、真空槽１０内で被蒸着部
材１４の側方に蒸発源１６ａ、１６ｂ、１６ｃ、１６ｄ
を設け、各蒸発源１６ａ〜１６ｄの被蒸着部材１４の搬
送方向下手側において真空槽１０内にイオン源１８ａ。An embodiment of the present invention will be described based on FIGS. 1 and 2. As shown in FIG. 1, this ion beam evaporation apparatus vertically transports a sheet-like member 14 to be evaporated into a vacuum chamber 10 by means of a conveying means 12, and then vertically transports a member 14 to be evaporated inside the vacuum chamber 10 to the side of the member 14 to be evaporated. Evaporation sources 16a, 16b, 16c, 16d
An ion source 18a is provided in the vacuum chamber 10 on the downstream side in the conveying direction of the member to be evaporated 14 of each of the evaporation sources 16a to 16d.
１８ｂ、１８ｃ、１８ｄを設けたものである。18b, 18c, and 18d are provided.
蒸発源１６ａ−１６ｄは、被蒸着部材１４の側方に位置
した蒸着材料からなる陰極２４ａ、２４ｂ。The evaporation sources 16a to 16d are cathodes 24a and 24b made of evaporation material located on the sides of the member 14 to be evaporated.
２４ｃ、２４ｄをアーク放電により蒸発しイオン化する
ものである。イオン化した貫着材料は、バイアス電源３
４により真空槽１０と被蒸着部材１４との間に印加した
バイアス電圧により被蒸着部材１４に引イ・ｊけられる
。24c and 24d are evaporated and ionized by arc discharge. The ionized penetrating material is supplied to the bias power source 3.
4, the bias voltage applied between the vacuum chamber 10 and the member 14 to be evaporated causes it to be drawn toward the member 14 to be evaporated.
また、イオン源１８８〜１８ｄは、被蒸着部材１４の表
面に蒸着した蒸着層にイオンを照射して、例えばこのイ
オンを注入するものである。Further, the ion sources 188 to 18d irradiate the vapor deposition layer deposited on the surface of the member 14 with ions to implant the ions, for example.
真空槽１０は金属等の導電性材料からなり、上下に補助
真空槽２０．２２が形成されており、真空槽１０内を所
定の真空度に維持している。被蒸着部材１４は金属シー
ト等からなり、真空槽１０に設けたローラからなる搬送
手段１２によって、真空槽１０内を上から下へ垂直に搬
送される。The vacuum chamber 10 is made of a conductive material such as metal, and auxiliary vacuum chambers 20 and 22 are formed above and below to maintain the inside of the vacuum chamber 10 at a predetermined degree of vacuum. The member 14 to be vapor-deposited is made of a metal sheet or the like, and is vertically conveyed inside the vacuum chamber 10 from top to bottom by a conveyance means 12 consisting of rollers provided in the vacuum chamber 10 .
蒸発源１６１〜＋６ｄとイオンｔＡｌ ８ ａ 〜１８
ｄは、真空槽１０内において被蒸着部材１４の両側に並
設されている。被蒸着部材１４の片側には、真空槽１０
の一ヒから下に並んで蒸発源１６ａ、イオン源ｉａａ、
蒸発源１６ｂ、イオン源＋８ｂが設けられており、被蒸
着部材１４の片面に薄膜を形成する。また、被蒸着部材
１４の他側には、真空槽１０の上から下に並んで蒸発源
１６Ｃ，イオン源１８ｃ、范発源＋６ｄ、イオン源１８
ｄが設けられており、被蒸着部材１４の他面に薄膜を形
成する。各蒸発源］ ６ ａ−１６ｄは、真空槽１０に
固定されたＴ１等の蒸着材料でできた陰極２４ａ〜２４
ｄと、陰極２４２〜２４ｄの中央部に設けたトリガ電極
２６ａ〜２６ｄと、陰極２４ａ〜２４ｄに負極を接続し
正極を陽極である真空槽１０およびトリガ電極２６ａ〜
２６ｄに接続したアーク電源２８ａ〜２８ｄと、このア
ーク電源２８ａ〜２８ｄとトリガ電極２６ａ〜２６ｄと
の間に設けた抵抗３０ａ〜３０ｄと、陰極２４ａ〜２４
ｄを接地電位にある真空槽１０より絶縁するための絶縁
物３１ａ〜３１ｄとから構成されている。また、イオン
源１８８〜１８ｄば、例えばＮイオンをマルチアパーチ
ャ３２ａ〜３２ｄから引き出して加速し被蒸着部材１４
に照射するものである。Evaporation sources 161~+6d and ions tAl8a~18
d are arranged in parallel on both sides of the member to be evaporated 14 in the vacuum chamber 10 . A vacuum chamber 10 is installed on one side of the member 14 to be vapor-deposited.
The evaporation source 16a, the ion source iaa,
An evaporation source 16b and an ion source +8b are provided to form a thin film on one side of the member 14 to be evaporated. Further, on the other side of the member 14 to be evaporated, arranged from top to bottom of the vacuum chamber 10 are an evaporation source 16C, an ion source 18c, a fan source +6d, and an ion source 18.
d is provided to form a thin film on the other surface of the member 14 to be evaporated. Each evaporation source] 6 a - 16 d are cathodes 24 a - 24 made of an evaporation material such as T1 fixed to the vacuum chamber 10
d, trigger electrodes 26a to 26d provided at the center of the cathodes 242 to 24d, a vacuum chamber 10 whose negative electrode is connected to the cathodes 24a to 24d, and whose positive electrode is an anode, and trigger electrodes 26a to 26d.
Arc power supplies 28a to 28d connected to 26d, resistors 30a to 30d provided between arc power supplies 28a to 28d and trigger electrodes 26a to 26d, and cathodes 24a to 24
d from the vacuum chamber 10 which is at ground potential. In addition, the ion sources 188 to 18d, for example, extract N ions from the multi-apertures 32a to 32d and accelerate them to the deposition target member 14.
It irradiates the area.
なお、バイアス電１Ｍ３４は、負極を被蒸着部材１４に
接し正極を真空槽１０に接続した直流の電源からなる。The bias electrode 1M34 is composed of a DC power source whose negative electrode is in contact with the member to be evaporated 14 and whose positive electrode is connected to the vacuum chamber 10.
また、第２図は、イオンビーム蒸着装置の要部斜視図を
示している。Moreover, FIG. 2 shows a perspective view of essential parts of the ion beam evaporation apparatus.
次に、被蒸着部材Ｉ４の両面に薄膜を形成する動作につ
いて説明する。なお、被蒸着部材１４の両面はそれぞれ
同様にして薄膜形成を行うので、第１図の被蒸着部材１
４の紙面方向左側面についてのみ説明し、右側面につい
てはその説明を省略する。Next, the operation of forming a thin film on both sides of the member to be evaporated I4 will be explained. Note that thin films are formed on both sides of the member 14 to be evaporated in the same way, so the member 14 to be evaporated shown in FIG.
Only the left side surface of No. 4 in the paper direction will be described, and the description of the right side side will be omitted.
■ まず、図示しない駆動源につながれた一つまたは複
数個の搬送手段１２を駆動して被蒸着部材１４を」二か
ら下へ搬送する。(2) First, one or more conveyance means 12 connected to a drive source (not shown) is driven to convey the member 14 to be deposited downward.
■ 蒸発源＋６ａより菌着材料を蒸気化して被蒸着部材
１４の表面に蒸着し、厚さ３００人程度の芸着層を形成
する。蒸着材料の蒸着は、次のようにして行う。まず、
トリガ電極２６ａと陰極２４ａとの間にアーク放電が起
きて蒸着材料が蒸発し、さらにこの蒸発した蒸着材料を
介して蒸着材料からなる陰極２４ａと陽極である真空槽
１０との間にアーク放電が発生して蒸着材料が蒸発して
イオン化する。蒸発してイオン化した蒸着材料は、バイ
アス電源３４によるバイアス電圧によって、被蒸着部材
１４の表面に引付けられ被蒸着部材１４の側面に蒸着し
て、Ｔｉの蒸着層を形成す■ イオン源１８ａより■で
形成した蒸着ｌ響に向けて例えば３０Ｋｅ■のエネルギ
をもったＮイオンを照射して蒸着層に注入し、被蒸着部
材Ｉ４の表面にＴＩＮと被蒸着部材１４の構成原子とが
混合したミキシング層を形成する。(2) The germ-adhering material is vaporized from the evaporation source +6a and deposited on the surface of the member 14 to be vapor-deposited to form a layer with a thickness of about 300 layers. The vapor deposition material is vapor-deposited as follows. first,
An arc discharge occurs between the trigger electrode 26a and the cathode 24a, and the vapor deposition material evaporates, and further, an arc discharge occurs between the cathode 24a made of the vapor deposition material and the vacuum chamber 10, which is the anode, through the vaporized vapor deposition material. The vaporized material is evaporated and ionized. The evaporated and ionized deposition material is attracted to the surface of the member to be evaporated 14 by the bias voltage from the bias power supply 34, and is deposited on the side surface of the member to be evaporated to form a deposited layer of Ti. For example, N ions having an energy of 30 Ke are irradiated toward the vapor deposition layer formed in step (3) and injected into the vapor deposition layer, so that TIN and constituent atoms of the member to be vaporized 14 are mixed on the surface of the member to be vaporized I4. Form a mixing layer.
■ 次に、蒸発源１６ｂより蒸発材料を蒸気化し、■で
形成したミキシング層に蒸着する。(2) Next, the evaporation material is evaporated from the evaporation source 16b and deposited on the mixing layer formed in (2).
■ さらに、イオンｉｌ＋ａｂより低エネルギ（例えば
数にθＶ）のＮイオンを照射して注入し、被蒸着部材１
４に所望の厚さのＴＩＮ薄股薄膜成する。■ Furthermore, N ions with lower energy (for example, θV) than the ions il+ab are irradiated and implanted into the member to be evaporated.
4, a thin TIN film of desired thickness is formed.
以上のようにして、被蒸着部材１４の両面にＴ ｉ Ｎ
ｉ股を形成する。As described above, T i N is applied to both sides of the member 14 to be vapor-deposited.
Form an i-crotch.
このように構成されたイオンビーム蒸着装置によると、
被蒸着部材１４を垂直に搬送し、蒸発源１６８〜＋６ｄ
およびイオン源］ ８ａ −］ ８ ｄを被蒸着部材１
４の側方に配置したので、蒸発した蒸着材料がイオン源
１８ａ〜＋８ｄに落ドしにくくなる。また、被蒸着部材
１４を垂直に］峠送するようにしたので、被蒸着部材１
４がたるんだすせず、蒸発源１６ａ、１６ｃならびにイ
オン源１８ｂ。According to the ion beam evaporation apparatus configured in this way,
The member to be evaporated 14 is conveyed vertically, and the evaporation sources 168 to +6d are
and ion source ] 8 a -] 8 d to the member to be evaporated 1
4, the evaporated deposition material is less likely to fall onto the ion sources 18a to +8d. In addition, since the member 14 to be vapor-deposited is conveyed vertically, the member 14 to be vapor-deposited
4 is slack, the evaporation sources 16a, 16c and the ion source 18b.
１８ｄの前後における搬送手段１２の間隔を大きく取る
ことができる。したがって、蒸発１ＪｊＡ１６ ａ〜１
６ｄから叢発した蒸着材料が搬送手段１２に付着しにく
くなる。このように、蒸発した蒸着材料がごみとしてイ
オン源１８８〜１８ｄに落下しに＜＜、かつ搬送手段１
２にも付着しにくくなり、清浄等の保守が容易に行なえ
る。The distance between the conveying means 12 before and after 18d can be increased. Therefore, evaporation 1JjA16 a~1
The vapor deposition material emitted from 6d becomes difficult to adhere to the conveyance means 12. In this way, the evaporated deposition material falls as dust to the ion sources 188 to 18d, and the transport means 1
2, and maintenance such as cleaning can be easily performed.
しかも、蒸着材料の熔融は、アーク放電によって行うの
で、蒸着材料は放電した部分しか溶融しない。したがっ
て、蒸発源１６ａ〜１６ｄを被蒸着部材１４の側方に配
置しても蒸着材料がこぼれたりしない。Moreover, since the vapor deposition material is melted by arc discharge, only the portion of the vapor deposition material where the discharge occurs is melted. Therefore, even if the evaporation sources 16a to 16d are arranged on the sides of the member 14 to be evaporated, the evaporation material does not spill.
また、被蒸着部材１４を垂直に搬送し、被蒸着部材１４
の両側に各々蒸発源１６ａ〜１６ｄおよびイオン源１８
ａ−１８ｄを並設して被蒸着部材１４の両側面に薄膜を
形成できるようにしたので、真空槽１０内を１度上から
下へ搬送するだけで被蒸着部材１４の両側面の薄膜形成
が行え、薄膜形成作業が容易に行なえる。Further, the member to be evaporated 14 is conveyed vertically, and the member to be evaporated 14
Evaporation sources 16a to 16d and ion sources 18 are provided on both sides of the
a-18d are arranged in parallel to form a thin film on both sides of the member 14 to be evaporated, so a thin film can be formed on both sides of the member 14 to be evaporated by simply transporting it from top to bottom in the vacuum chamber 10 once. can be carried out, and thin film formation work can be carried out easily.
また、ＴｉＮの反応を起こすため番こ必要な十分なエネ
ルギを持ってイオン源１８ａ〜１８ｄから被蒸着部材１
４にイオンが照射されるので、被茎着部材１４をあらか
じめ余熱しておく必要がなく、低温状態で薄膜成形が行
なえる。In addition, the ion sources 18a to 18d are supplied to the member to be evaporated with sufficient energy to cause a TiN reaction.
4 is irradiated with ions, there is no need to preheat the covering member 14 in advance, and thin film formation can be performed at a low temperature.
なお、前記実施例では、被蒸着部材１４の両側にそれぞ
れ２組ずつ蒸発源をイオン源を配置したものであったが
、被芸着部材１４の片側に設けたものや、蒸発源および
イオン源を１組ずつ設けたものでもよい。また、蒸発源
による蒸着作業の前に、イオン源による被蒸着部材１４
の表面のクリーニングと活性化を行ってもよい。さらに
、本実施例では被蒸着部材１４の表面にＴｉＮなどの金
属窒化物の薄膜を形成したが、蒸発源でＡＩ！を蒸着し
イオン源でＡｒイオンを照射して被蒸着部材１４の表面
にＡ７！の薄膜を形成したり、あるいは蒸発源からＴｉ
ｔ−蒸発させイオン源でＣイオンを照射してＴｉｃの金
属炭化物の薄膜を形成できることは勿論である。In the above embodiment, two sets of evaporation sources and ion sources were arranged on each side of the member 14 to be evaporated. It is also possible to provide one set of each. In addition, before the vapor deposition operation using the evaporation source, the member 14 to be vaporized using the ion source
Cleaning and activation of the surface may be performed. Furthermore, in this example, a thin film of metal nitride such as TiN was formed on the surface of the member 14 to be evaporated, but the evaporation source was not used for AI! A7! is deposited on the surface of the member 14 to be evaporated by irradiating Ar ions with an ion source. to form a thin film of Ti or from an evaporation source.
Of course, a thin film of Tic metal carbide can be formed by irradiating C ions with a t-evaporation ion source.
この発明のイオンビーム蒸着装置によれば、被蒸着部材
を垂直に搬送して被蒸着部材の側方に蒸発源とイオン源
を配置したので、蒸発した蒸着材料がごみとしてイオン
源に落下しにくくなる。また、被蒸着部材を垂直に搬送
するようにしたので、被蒸着部材がたるんだすせず、蒸
発源ならびにイオン源の前後における搬送手段の間隔を
大きく取ることができる。したがって、蒸発源から蒸発
した蒸着材料が搬送手段に付着しにくくなる。このよう
に、蒸発した蒸着材料がごみとしてイオン源に落下しに
＜＜、かつ搬送手段にも付着しにくくなり、保守が容易
に行なえるという効果がある。According to the ion beam evaporation apparatus of the present invention, the member to be evaporated is conveyed vertically and the evaporation source and the ion source are arranged on the side of the member to be evaporated, so that the evaporated material is less likely to fall into the ion source as dust. Become. Furthermore, since the member to be evaporated is conveyed vertically, the member to be evaporated does not sag, and the distance between the conveying means before and after the evaporation source and the ion source can be increased. Therefore, the evaporation material evaporated from the evaporation source is less likely to adhere to the conveyance means. In this way, the evaporated deposition material is less likely to fall into the ion source as dust and adhere to the conveying means, making maintenance easier.
第１図はこの発明の一実施例の概略図、第２図はその要
部斜視図、第３図は従来例の斜視図である。
１０・・・真空槽、１２・・・搬送手段、１４・・・被
蒸着部材、１６ａ〜１６ｄ−’Ｉｆ発源、１８ａ 〜１
８ｄ・・・イオン源、２６ａ〜２６ｄ・・・トリガ電極
、３４・・・バイアス電源
第１図
第２図FIG. 1 is a schematic diagram of an embodiment of the present invention, FIG. 2 is a perspective view of the main part thereof, and FIG. 3 is a perspective view of a conventional example. DESCRIPTION OF SYMBOLS 10... Vacuum chamber, 12... Transport means, 14... Member to be vapor-deposited, 16a-16d-'If source, 18a-1
8d...Ion source, 26a-26d...Trigger electrode, 34...Bias power supply Fig. 1 Fig. 2
Claims (1)
に搬送する搬送手段と、前記真空槽内において前記被蒸
着部材の側方に設けられ蒸着材料をアーク放電により蒸
発させてイオン化する蒸発源と、前記真空槽と前記被蒸
着部材との間にバイアス電圧を印加し前記イオン化した
蒸着材料を前記被蒸着部材に引付けるバイアス電源と、
前記蒸発源の前記被蒸着部材の搬送方向下手側において
前記真空槽内に設けられ前記被蒸着部材の表面に蒸着し
た蒸着層にイオンを照射するイオン源とを備えたイオン
ビーム蒸着装置。a vacuum chamber; a conveying means for vertically conveying a sheet-like member to be deposited within the vacuum chamber; an evaporation source; a bias power source that applies a bias voltage between the vacuum chamber and the member to be evaporated to attract the ionized evaporation material to the member to be evaporated;
An ion beam evaporation apparatus comprising: an ion source that is provided in the vacuum chamber on a downstream side of the evaporation source in the direction of conveyance of the member to be evaporated, and irradiates ions to a vapor deposition layer deposited on the surface of the member to be evaporated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13241786A JPS62287068A (en) | 1986-06-06 | 1986-06-06 | Ion beam vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13241786A JPS62287068A (en) | 1986-06-06 | 1986-06-06 | Ion beam vapor deposition device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62287068A true JPS62287068A (en) | 1987-12-12 |
| JPH0533304B2 JPH0533304B2 (en) | 1993-05-19 |
Family
ID=15080886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13241786A Granted JPS62287068A (en) | 1986-06-06 | 1986-06-06 | Ion beam vapor deposition device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62287068A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0250950A (en) * | 1988-08-12 | 1990-02-20 | Toppan Printing Co Ltd | Manufacture of vapor-deposited film |
| EP1296353A2 (en) * | 1997-12-05 | 2003-03-26 | Korea Institute Of Science And Technology | Apparatus for surface modification of polymer, metal and ceramic materials using ion beam |
| WO2011016471A1 (en) * | 2009-08-06 | 2011-02-10 | 富士電機ホールディングス株式会社 | Apparatus for producing a thin-film lamination |
| JP2015227488A (en) * | 2014-05-31 | 2015-12-17 | 国立大学法人山梨大学 | Vertical film deposition apparatus |
| CN109957752A (en) * | 2017-12-26 | 2019-07-02 | 佳能特机株式会社 | The manufacturing method of substrate board treatment and its control method, film formation device, electronic component |
| JP2019173066A (en) * | 2018-03-27 | 2019-10-10 | キヤノントッキ株式会社 | Substrate processing apparatus and method of controlling the same, film deposition apparatus, and method of manufacturing electronic component |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58100675A (en) * | 1981-12-11 | 1983-06-15 | Mitsubishi Heavy Ind Ltd | Method and device for continuous vapor deposition |
| JPS6134173A (en) * | 1984-07-24 | 1986-02-18 | Agency Of Ind Science & Technol | Production of high-hardness boron nitride film |
-
1986
- 1986-06-06 JP JP13241786A patent/JPS62287068A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58100675A (en) * | 1981-12-11 | 1983-06-15 | Mitsubishi Heavy Ind Ltd | Method and device for continuous vapor deposition |
| JPS6134173A (en) * | 1984-07-24 | 1986-02-18 | Agency Of Ind Science & Technol | Production of high-hardness boron nitride film |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0250950A (en) * | 1988-08-12 | 1990-02-20 | Toppan Printing Co Ltd | Manufacture of vapor-deposited film |
| EP1296353A2 (en) * | 1997-12-05 | 2003-03-26 | Korea Institute Of Science And Technology | Apparatus for surface modification of polymer, metal and ceramic materials using ion beam |
| US6841789B2 (en) | 1997-12-05 | 2005-01-11 | Korea Institute Of Science And Technology | Apparatus for surface modification of polymer, metal and ceramic materials using ion beam |
| EP1296353A3 (en) * | 1997-12-05 | 2008-05-07 | Korea Institute Of Science And Technology | Apparatus for surface modification of polymer, metal and ceramic materials using ion beam |
| WO2011016471A1 (en) * | 2009-08-06 | 2011-02-10 | 富士電機ホールディングス株式会社 | Apparatus for producing a thin-film lamination |
| CN102471881A (en) * | 2009-08-06 | 2012-05-23 | 富士电机株式会社 | Apparatus for producing a thin-film lamination |
| JPWO2011016471A1 (en) * | 2009-08-06 | 2013-01-10 | 富士電機株式会社 | Thin film laminate manufacturing equipment |
| JP2015227488A (en) * | 2014-05-31 | 2015-12-17 | 国立大学法人山梨大学 | Vertical film deposition apparatus |
| CN109957752A (en) * | 2017-12-26 | 2019-07-02 | 佳能特机株式会社 | The manufacturing method of substrate board treatment and its control method, film formation device, electronic component |
| CN109957752B (en) * | 2017-12-26 | 2022-10-28 | 佳能特机株式会社 | Substrate processing apparatus, method of controlling the same, film forming apparatus, and method of manufacturing electronic component |
| JP2019173066A (en) * | 2018-03-27 | 2019-10-10 | キヤノントッキ株式会社 | Substrate processing apparatus and method of controlling the same, film deposition apparatus, and method of manufacturing electronic component |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0533304B2 (en) | 1993-05-19 |
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