KR102500133B1 - Film forming method and film forming apparatus - Google Patents

Abstract

[Problem] To provide a film formation method and a film formation apparatus capable of covering the surface with a predetermined film thickness while maintaining a concavo-convex surface shape when forming a thin film on a substrate surface having convex and concave portions.
[Solution] A film formation method in which convex portions extending in a first direction and concave portions extending in the first direction are alternately formed along a second direction intersecting the first direction to form a film on a substrate 10, comprising: A film formation step of irradiating a substrate 10 with a film formation material to form a thin film, and an etching process of irradiating the substrate 10 on which the thin film has been formed with an etching beam to perform etching, wherein the film formation material is irradiated It is characterized in that the direction of irradiation and the direction of irradiation of the etching beam are inclined with respect to the normal line of the film formation surface of the substrate 10, and the irradiation angles of both are set to be the same.

Description

Film formation method and film formation apparatus {FILM FORMING METHOD AND FILM FORMING APPARATUS}

The present invention relates to a film formation method and film formation apparatus for forming a thin film on a substrate.

BACKGROUND OF THE INVENTION Conventionally, a technique of forming a thin film on a substrate by sputtering or the like is known. However, when irregularities are provided on the substrate surface, hollow spaces called voids may be formed inside the thin film to be formed. This point will be described with reference to FIG. 10 . 10 is a schematic cross-sectional view of a substrate on which a thin film is formed by a conventional film forming method.

On the surface of the illustrated substrate 710, a convex portion 711 and a concave portion 712 are provided. Fig. 10(a) shows an initial state in the process in which the film forming process is performed. As shown in this figure, in the formed film 720a, a part of the film formed on the upper surface of the convex portion 711 protrudes toward the concave portion 712 side and is covered. Therefore, if the film forming process is performed as it is, a void V is formed above the concave portion 712 . Fig. 10(b) shows a state in the case where film formation is performed until the upper surface of the thin film 720b becomes substantially flat. When the voids V are formed in this way, desired functions and quality may not be obtained. The cause of such voids is that the film formation rate differs depending on the top surface of the concave portion, the top surface of the convex portion, and the side surface of the substrate to which the particles are adhered by sputtering, resulting in a difference in film thickness.

Patent Document 1: Japanese Patent Publication No. 2015-529744 Patent Document 2: Japanese Unexamined Patent Publication No. 2012-67394

An object of the present invention is to provide a film forming method and a film forming apparatus capable of covering the surface with a predetermined film thickness while maintaining a concavo-convex surface shape when forming a thin film on a substrate surface having convex and concave portions.

The present invention adopts the following means in order to solve the above problems.

That is, the film formation method of the present invention,

A film formation method in which convex portions extending in a first direction and concave portions extending in the first direction are alternately formed along a second direction intersecting the first direction to form a film, comprising:

a film forming step of irradiating the substrate with a film forming material to form a thin film;

An etching step of performing etching by irradiating an etching beam to the substrate on which the thin film is formed,

It is characterized in that the direction in which the film formation material is irradiated and the direction in which the etching beam is irradiated are inclined with respect to a normal line of the film formation surface of the substrate, and both irradiation angles are set to be the same.

Here, "both irradiation angles are set to be the same" means that it is preferable that both irradiation angles are the same, but a slight deviation occurs in the irradiation (incidence) angle due to dimensional tolerances of various members or some kind of influence. means also included.

According to the present invention, the film thickness of the film to be formed on the substrate surface is dared to be different depending on the position by inclining the direction in which the film formation material is irradiated onto the substrate in the film formation step with respect to the normal line. Then, by setting the direction in which the film formation material is irradiated onto the substrate in the film formation step and the direction (incident angle) in which the etching beam is irradiated onto the substrate are the same, the etching beam cuts away the film in the thick portion. It becomes thin, and in the portion where the film is thin, a part of the scraped material adheres and becomes thick. This makes it possible to make the surface of the film flat and even.

As described above, according to the present invention, when forming a thin film on the surface of a substrate on which convex and concave portions are formed, the surface can be covered with a uniform film thickness while maintaining the concavo-convex shape of the surface.

1 is a schematic configuration diagram of the inside of a film forming apparatus according to an embodiment of the present invention.
2 is a flowchart illustrating the operation of a film forming apparatus according to an embodiment of the present invention.
3 is an operation explanatory diagram in the film forming apparatus according to the embodiment of the present invention.
4 is a schematic internal configuration diagram of a film forming apparatus according to an embodiment of the present invention.
5 is an explanatory diagram of an ion source according to an embodiment of the present invention.
6 is an explanatory diagram of a film forming method according to an embodiment of the present invention.
7 is an explanatory diagram of a film forming method according to an embodiment of the present invention.
8 is an explanatory diagram of a film forming method according to an embodiment of the present invention.
9 is an explanatory diagram of a film forming method according to an embodiment of the present invention.
10 is a schematic cross-sectional view of a substrate on which a thin film is formed by a conventional film forming method.

EMBODIMENT OF THE INVENTION Hereinafter, preferred embodiment of this invention is described, referring drawings. However, the following embodiments are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In the following description, the hardware configuration and software configuration of the device, processing flow, manufacturing conditions, dimensions, material, shape, etc. are intended to limit the scope of the present invention only to these unless otherwise specified. It is not.

(Embodiment)

A film forming method and a film forming apparatus according to an embodiment of the present invention will be described with reference to FIGS. 1 to 9 . 1 is a schematic internal configuration diagram of a film forming apparatus according to an embodiment of the present invention, and shows a schematic configuration when the entire interior of the film forming apparatus is viewed from above. 2 is a flowchart illustrating the operation of a film forming apparatus according to an embodiment of the present invention. 3 is an operation explanatory diagram in the film forming apparatus according to the embodiment of the present invention. Fig. 4 is a schematic internal configuration diagram of a film forming apparatus according to an embodiment of the present invention, and shows a schematic configuration of a vicinity where an etching apparatus is installed, viewed from the substrate transport direction. 5 is an explanatory diagram of an ion source as an etching apparatus according to an embodiment of the present invention, (a) of the same figure is a front view showing a beam irradiation surface of the ion source, and (b) of the same figure is (a) of the same figure. ) is a cross-sectional view of AA, and (c) of the same figure is a graph showing the etching intensity of the ion beam in the longitudinal direction. 6 to 9 are explanatory diagrams of a film forming method according to an embodiment of the present invention.

<Overall Configuration of Film Formation Equipment>

In particular, with reference to FIG. 1 , the overall configuration of the film forming apparatus 1 according to the present embodiment will be described. The film forming apparatus 1 includes a Stocker chamber 100 in which the substrate 10 to be subjected to the film forming process is accommodated, an atmospheric pressure switching chamber 200 for switching the room between a standby state and a vacuum state, and various types of substrates 10 processed on the processing surface. A processing chamber 300 for processing is provided.

The Stocker chamber 100 plays a role of accommodating a plurality of substrate transport devices 15 that can be transported while holding the substrates 10 therein. The Stocker chamber 100 includes a mounting table 111 on which a plurality of substrate conveying devices 15 are mounted, and a drive mechanism for reciprocating the mounting table 111. This drive mechanism is composed of a drive source 121 such as a motor that rotates the ball screw, a guide rail 122 that regulates the moving direction of the mounting table 111, and the like. However, the drive mechanism for reciprocating the mounting table 111 is not limited to this configuration, and various known technologies can be employed. In addition, a plurality of guide rails 112 regulating the moving direction of the substrate transport device 15 are installed on the mounting table 111 .

In the air pressure conversion chamber 200, in order to send the substrate conveying device 15 carried in from the Stocker chamber 100 in a standby state to the processing chamber 300 in a vacuum state, at a stage before being sent to the processing chamber 300, It is responsible for converting the room from an atmospheric state to a vacuum state. In addition, heaters 221 and 222 for heating the substrate 10 are installed in the atmospheric pressure conversion chamber 200 according to the present embodiment. That is, depending on the material of the substrate 10, if it is transported to the processing chamber 300 at room temperature, various gases are generated from the substrate 10, which adversely affects film formation. Accordingly, by heating the substrate 10 with the heaters 221 and 222 , gas is forcibly generated at an early stage, and generation of gas in the processing chamber 300 can be suppressed. In addition, a guide rail 210 for regulating the movement direction of the substrate transport device 15 is also installed in the atmospheric pressure conversion chamber 200 .

The processing chamber 300 includes a chamber 301 inside which a vacuum atmosphere is created, and a guide rail 302 that regulates the moving direction of the substrate transport device 15 . Regarding the mechanism for reciprocating the substrate conveying device 15, since various known technologies can be applied, detailed description thereof is omitted, but a driving mechanism by a ball screw, a rack and pinion mechanism, etc. are applied. possible.

In the processing chamber 300, a preprocessing area 300a, a film formation area 300b, and an etching area 300c are provided. In the pre-processing area 300a, a substrate processing apparatus 310 for performing pre-processing such as cleaning of the processing surface of the substrate 10 prior to the film formation process is installed. In the film formation area 300b, a sputtering device 320 as a film formation material irradiation device that performs a film formation process on the treated surface of the substrate 10 is installed. Further, in the etching area 300c, an etching device 330 for etching a film formed on the substrate 10 by the sputtering device 320 is installed. On the other hand, the space provided in front of the substrate processing apparatus 310 of the preprocessing area 300a is a space in which the substrate transport apparatus 15 waits before preprocessing by the substrate processing apparatus 310 is performed. The film forming apparatus 1 according to the present embodiment has a so-called in-line structure in which a series of processes are performed on the substrate 10 while holding and transporting the substrate 10 .

<Overall Operation of Film Formation Device>

The film forming apparatus 1 includes a driving mechanism for reciprocating the mounting table 111, atmospheric pressure in the atmospheric pressure conversion chamber 200, heaters 221 and 222, atmospheric pressure in the processing chamber 300, a substrate processing apparatus 310, and a sputtering apparatus. 320 and the etching device 330, as well as a control device C for performing transport control of the substrate 10 by the substrate transport device 15 is provided. The following operations (film forming process, etching process, etc.) are executed by being controlled by this control device C. The control device C may be composed of, for example, a computer having a processor, memory, storage, I/O, and the like. In this case, the function of the control device C is realized when the processor executes a program stored in memory or storage. As the computer, a general-purpose computer may be used, or an embedded computer or PLC (programmable logic controller) may be used. Alternatively, some or all of the functions of the control device C may be constituted by circuits such as ASICs and FPGAs. In addition, the control device C may be configured to transmit control commands via wiring connected to various devices to be controlled, or may be configured to transmit control commands to various devices and the like wirelessly. Hereinafter, the overall operation of the film forming apparatus 1 will be described with reference to FIG. 2 .

<<Preparation Process>>

In the Stocker chamber 100, a plurality of substrate transport devices 15 each holding the substrate 10 are accommodated. Among them, the substrate conveying device 15 holding the substrate 10 to be processed is conveyed from the Stocker chamber 100 to the atmospheric pressure conversion chamber 200 (step S101). In the atmospheric pressure conversion chamber 200, a pressure reduction operation is performed, and the room is switched from a standby state to a vacuum state. Further, depending on the material of the substrate 10, the heat treatment to the substrate 10 is performed simultaneously (step S102). For example, the substrate 10 is heated from about 100° C. to about 180° C. by heat treatment for about 10 minutes. Thereafter, the substrate 10 is transported from the atmospheric pressure conversion chamber 200 to the preprocessing area 300a of the processing chamber 300 (step S103). In the pre-processing area 300a, surface treatment by ion beam irradiation is performed on the treated surface of the substrate 10 by the substrate processing apparatus 310 (step S104).

<<Film formation process>>

Next, the substrate 10 is conveyed to the film formation area 300b (step S105), and sputtering is performed on the treated surface of the substrate 10 by the sputtering apparatus 320 (step S106). As for the sputtering device 320, since it is a well-known technique, its detailed description is omitted. However, a target or the like from which a film forming material is released when a high voltage is applied is provided. On the other hand, as for the target, a plate-shaped target may be employed, or a cylindrical target configured to be rotatable may be employed.

<<Etching Process>>

The substrate 10 subjected to the film formation process is conveyed to the etching area 300c (step S107), and an etching process is performed by the etching apparatus 330 (step S108).

After the etching process is performed, it is determined by the control device C whether or not the number of times of sputtering X has reached N (step S109). ), and the film forming process and the etching process are performed again. In this embodiment, the film forming process and the etching process are repeatedly performed a predetermined number of times N. Further, downward arrows T11, T21, T12, T22, ..., T1X, T2X in Fig. 1 indicate moving steps of the substrate 10 (substrate transport device 15). After the film formation process and the etching process are repeated N times, the processed substrate 10 is sent to the air pressure conversion chamber 200, switched from a vacuum state to a standby state, and then carried out to the Stocker chamber 100.

On the other hand, in this embodiment, the case where the stocker chamber 100 and the atmospheric pressure conversion chamber 200 installed at one end side of the processing chamber 300 adopts the structure which carries in and carries out the substrate transport apparatus 15 is shown. However, for the Stocker chamber 100 and the atmospheric pressure conversion chamber 200 installed on one end side of the processing chamber 300, only the loading operation of the substrate transport device 15 is performed, and the substrate transport device is placed on the other end side of the processing chamber 300. It is also possible to employ a structure in which an air pressure conversion chamber for carrying out (15) and a Stocker chamber for accommodating the substrate 10 after processing are provided.

The film forming apparatus 1 according to the present embodiment can be applied to various types of electrode formation involving pretreatment, for example. As a specific example, the film formation of the plating seed film suitable for FC-BGA (Flip-Chip Ball Grid Array) mounted substrates, and the metal laminated film for SAW (Surface Acoustic Wave) devices is mentioned, for example. Moreover, the film formation of the conductive hard film in the bonding part of LED, the terminal part film of MLCC (Multi-Layered Ceramic Capacitor), etc. are mentioned. In addition, it is applicable also to the film formation of the electronic shield film in an electronic component package, and the terminal part film of a chip resistor. Although the size of the substrate 10 is not particularly limited, in this embodiment, a substrate 10 having a size of about 200 mm x 200 mm is used. In addition, the material of the board|substrate 10 is arbitrary, For example, the board|substrate of polyimide, glass, silicon, metal, ceramics, etc. is used.

<Substrate processing device and etching device>

In particular, the substrate processing apparatus 310 and the etching apparatus 330 will be described with reference to FIGS. 3(b) and 4 . The basic configuration of the substrate processing apparatus 310 and the etching apparatus 330 are the same. That is, the substrate processing device 310 and the etching device 330 are devices for performing cleaning or etching processing on the surface (processing surface) of the substrate by ion beam irradiation. In this way, since the basic structure of both is the same, the etching device 330 will be described here.

The etching device 330 includes an ion source 331 and a high-voltage power supply 336 that applies a voltage to the ion source 331 . 4 also shows the ion beam 331a irradiated from the ion source 331.

The chamber 301 in the processing chamber 300 is an airtight container, and its interior is maintained in a vacuum state (or reduced pressure state) by the exhaust pump 303 . By opening the gas supply valve 304 and supplying gas into the chamber 301, a suitable gas atmosphere (or pressure zone) for processing can be appropriately changed. The entire chamber 301 is electrically grounded. The substrate transport device 15 moves the substrate 10 on a guide rail 302 provided on the bottom surface of the chamber 301 while holding the substrate 10 in a vertical position so that the processing surface of the substrate 10 follows the vertical direction. It is designed to be movable. The guide rail 302 extends in a direction parallel to the surface of the substrate 10, and the substrate transport device 15 moves along a direction parallel to the surface of the substrate 10 by a driving mechanism (not shown).

The substrate transport device 15 includes a holding member (substrate holder) 15a for holding a substrate 10, a supporting member (transport carrier) 15b for supporting the holding member 15a, and a holding member 15b. A connecting member 15c for electrically insulating and mechanically connecting the member 15a and the support member 15b, and a rolling element 15d provided at the lower end of the support member 15b are provided. When the rolling element 15d rolls on the guide rail 302 , the substrate transport device 15 moves along the guide rail 302 . Here, the surface holding the board|substrate 10 by the holding member 15a is called holding surface F.

FIG. 3( b ) shows the etching device 330 and substrate transport during a process in which etching is performed (etching process) while the substrate transport device 15 moves in the direction of the arrows T11, T12, and T1X in FIG. The appearance of the device 15 is shown. Meanwhile, the distance between the ion source 331 and the substrate 10 is set to about 100 to 200 mm. In addition, the high-voltage power source 336 is configured to apply an anode voltage (~several kV) to the ion source 331.

<Ion Source>

In particular, referring to FIG. 5 , the ion source 331 will be described in more detail. The ion source 331 includes a cathode 332 , a beam irradiation surface 333 , an anode 334 , and a permanent magnet 335 . In this embodiment, the cathode 332 also serves as the case of the ion source 331 . The cathode 332 and the anode 334 are each made of SUS, and both are electrically insulated. The cathode 332 is electrically grounded by being fixed to the chamber 301 . On the other hand, the anode 334 is connected to the high voltage power source 336. In this configuration, when a high voltage is applied from the high voltage power supply 336 to the anode 334, an ion beam is emitted from an exit opening provided in the beam irradiation surface 333 of the case (cathode 332). As for the principle of the ion source 331, there are a type in which gas is introduced from the rear side of the case and ions are generated inside the case, and a type in which atmospheric gas existing outside the case is ionized. Any of these may be used. . 4 shows the latter case, and gas is supplied into the chamber 301 by opening the gas supply valve 304 . As the gas, argon gas, oxygen gas, nitrogen gas or the like can be used.

The ion source 331 according to the present embodiment has a beam irradiation surface 333 having a long and thin shape (line shape or track shape) of about 300 to 400 mm × about 70 mm so that the emission aperture has a long longitudinal direction and a short longitudinal direction. has And, the ion source 331 is arranged so that the longitudinal direction of the emission opening crosses the transport direction of the substrate 10 . By using such a vertically long ion source 331, the ion beam is irradiated throughout the longitudinal direction of the substrate 10 (direction orthogonal to the transport direction). Accordingly, the entire surface of the substrate 10 can be irradiated with a beam in one beam scan along the transport direction, and the surface treatment (etching treatment) can be speeded up (productivity improved).

On the other hand, Fig. 5(c) shows the etching intensity of the ion beam emitted from the ion source 331 in the longitudinal direction. As shown in the figure, the intensity of the ion beam in the longitudinal direction is not constant, and depending on the design of the magnetic field of the ion source 331, the intensity in the central part becomes large as shown by the broken line L2 or Take any one of the distributions in which the intensity of the central part is small. If there is a bias in the distribution of etching strength as shown in FIG. 5(c), it is not preferable because non-uniformity occurs in the etching amount. Therefore, by using the beam irradiation surface 333 of about 1.5 to 2 times the size of the substrate 10, the distribution of the etching intensity can be made uniform.

<Flow of surface treatment by the substrate processing device>

According to the substrate processing apparatus 310 configured as described above, when the substrate 10 is transported to the preprocessing area 300a of the processing chamber 300, the control device C controls the high-voltage power supply, and the ion source start beam irradiation. In that state, the control device C moves the substrate transport device 15 at a constant speed to pass the substrate 10 through the ion beam. By this method, the surface of the substrate 10 is irradiated with ion beams, and the surface side of the substrate 10 is subjected to surface treatment (cleaning treatment). By adopting such a configuration for performing beam scanning, the entire substrate can be processed with an ion beam in an irradiation range smaller than the area of the substrate 10, so that the size of the ion source and the overall size of the device can be reduced. In addition, by adopting a configuration in which the processing surface of the substrate 10 supports the substrate 10 in a vertical direction and irradiates ion beams in a horizontal direction with respect to the processing surface, the particles scraped by etching are removed by gravity. Since it falls and does not remain on the treated surface of the substrate 10, there is also an advantage that occurrence of non-uniformity in processing due to remaining particles can be prevented.

<Film Formation Process and Etching Process>

In particular, with reference to Fig. 3 and Figs. 6 to 9, the film forming process and the etching process will be described in more detail. The film forming method and film forming apparatus according to the present embodiment can be suitably used when forming a thin film on the surface of a substrate 10 on which linear convex portions 11 and concave portions 12 are alternately formed on the surface side. there is. That is, in the film forming method and film forming apparatus according to the present embodiment, the convex portion 11 extending in the first direction and the concave portion 11 extending in the first direction form a second direction crossing the first direction. It can be preferably used when forming a film on the substrates 10 alternately formed according to the pattern.

Fig. 3 (a) shows the state of the substrate transport device 15 and the sputtering device 320 during the film formation process, and Fig. 3 (b) shows the substrate transport device 15 and the etching device 330 during the etching process. represents the appearance of In the present embodiment, the film forming step and the etching step are performed while the substrate 10 is conveyed in the direction of the downward arrows T11, T12 and T1X in Fig. 1 . On the other hand, when the substrate 10 is conveyed in the direction of the downward arrows T21, T22 and T2X in Fig. 1, the operation of the sputtering device 320 and the etching device 330 is stopped.

6 shows two preferred examples of a method for transporting the substrate 10 in the film forming method and film forming apparatus according to the present embodiment. Hereinafter, it is called a "1st conveyance mode" and a "2nd conveyance mode", respectively. Fig. 6 (a) shows the appearance of the substrate 10 in the case of the first transport mode. As shown in this figure, in the first transport mode, the groove-like step formed by the convex portion 11 and the concave portion 12 in the substrate 10 extends in the direction (first direction) The substrate 10 is transported in the vertical direction (second direction). Fig. 6(b) shows the appearance of the substrate 10 in the case of the second transport mode. As shown in this figure, in the second conveyance mode, the groove-shaped step difference formed by the convex portion 11 and the concave portion 12 in the substrate 10 is parallel to the extending direction (first direction). Thus, the substrate 10 is transported.

Fig. 7 shows the case of the first conveyance mode, (a) in the same figure shows a film forming process, and (b) in the same figure shows an etching process. On the other hand, the substrate 10 in FIG. 7 corresponds to the cross section BB in FIG. 6(a). Fig. 8 shows the case of the second transport mode, (a) of the same figure shows a film forming process, and (b) of the same figure shows an etching process. On the other hand, the substrate 10 in FIG. 8 corresponds to the CC cross section in FIG. 6(b). In FIGS. 6 to 8 , the substrate transport device 15 is omitted and only the state of the substrate 10 transported by the substrate transport device 15 is shown. In the following description, the normal line of the holding surface F by the holding member 15a holding the conveyed substrate 10 is referred to as "normal line N" for convenience. In addition, the beam irradiated in the etching process is called "etching beam". On the other hand, the normal line N can also be referred to as the normal line of the film formation surface of the substrate 10 .

In the film forming method and film forming apparatus 1 according to the present embodiment, the direction in which the substrate 10 is irradiated with the film forming material in the film forming step and the direction in which the etching beam is irradiated are the normal line N and the substrate ( 10) is a direction parallel to a plane including a direction parallel to the conveying direction. In addition, the direction in which the substrate 10 is irradiated with the film formation material in the film formation step and the direction in which the substrate 10 is irradiated with the etching beam are inclined with respect to the normal line N, and both are irradiated at angles. (angle of incidence) is set to be the same. In addition, "both irradiation angles are set to be the same" means that it is preferable that both irradiation angles be the same, but the case where some deviation occurs in the irradiation angle due to dimensional tolerances of various members or some kind of influence is also included. it means. Further, among the angles at which the normal line N intersects with the direction in which the substrate 10 is irradiated with the film-forming material in the film formation step, the acute angle side among the angles at which the etching beam and the normal line N intersect, the acute angle side The angles of are all 10° or more and 75° or less. On the other hand, among the angles at which the normal line N intersects the direction in which the substrate 10 is irradiated with the film formation material in the film formation step, the angle on the acute angle side corresponds to the angle α in FIG. 7(a). Among the angles at which the etching beam and the normal line N intersect, the angle on the acute angle side corresponds to the angle α in Fig. 7(b). On the other hand, the direction in which the substrate 10 is irradiated with the film-forming material in the film formation step and the direction in which the etching beam is irradiated are the same in both the case of the first transport mode and the second transport mode.

In the case of the first transport mode, both the direction in which the substrate 10 is irradiated with the film-forming material in the film-forming step and the direction in which the substrate 10 is irradiated with the etching beam are convex portions 11 and the groove-shaped steps formed by the concave portions 12 are perpendicular to the extending direction (first direction). In addition, in the case of the second transport mode, both the direction in which the substrate 10 is irradiated with the film-forming material in the film-forming step and the direction in which the substrate 10 is irradiated with the etching beam are convex portions 11 and a direction (first direction) in which the groove-shaped steps formed by the concave portions 12 extend and the plane including the normal line N are parallel to each other.

<<First Conveyance Mode>>

In particular, referring to FIG. 7 , a method in which a film is formed by the film forming process in the case of the first transfer mode and a method in which the film is etched by the etching process will be described. The film-forming material irradiated from the sputtering apparatus 320 (target) toward the substrate 10 becomes thicker on the surface of the substrate 10 in the irradiation direction of the film-forming material. Fig. 7(a) shows a film 20a formed by the film forming step. As shown, among the films formed on the upper surface of the convex portion 11, the film thickness becomes thicker toward the right side in the drawing, and on the upper surface of the concave portion 12, the vicinity blocked by the convex portion 11 The film thickness of the film becomes thin.

Then, the film 20a formed in the film forming step is irradiated with an etching beam to perform etching (see Fig. 7(b)). When the film 20a is irradiated with the etching beam, the film 20a is gradually scraped in the irradiation direction of the beam. Accordingly, the film 20a formed on the surface of the substrate 10 is shaved around the right side of the drawing of the portion formed on the upper surface of the convex portion 11 in FIG. 7(b) by the etching beam. Film 20b in Fig. 7(b) shows the state after the etching step. In addition, a dotted line L1 shown in the figure indicates the position of the surface of the film 20a after the film forming step. As described above, the direction in which the film formation material is irradiated to the substrate 10 and the direction in which the etching beam is irradiated to the substrate 10 in the film formation step are inclined with respect to the normal line N, and both The irradiation (incident) angle of is set to be the same. Therefore, the thicker the film thickness, the greater the amount of etching. On the other hand, a part of the material scraped off by etching adheres to the film and becomes a part of the film. At this time, since it is easy to adhere especially to the part not irradiated with the etching beam, the part with a thin film thickness tends to become thicker by the adhering material.

<<Second Conveyance Mode>>

In particular, with reference to FIG. 8 , a method in which a film is formed by the film forming process in the case of the second conveyance mode and a method in which etching is performed by the etching process will be described. The film-forming material irradiated from the sputtering apparatus 320 (target) toward the substrate 10 becomes thicker on the surface of the substrate 10 in the irradiation direction of the film-forming material. Fig. 8(a) shows a film 20a formed by the film forming step. As shown, the film thickness of the film formed on the upper surface of the convex portion 11 and the upper surface of the concave portion 12 becomes thick, and the side surface of the convex portion 11 (also referred to as the side surface of the concave portion 12) ), the film thickness of the film formed is thin.

Then, the film 20a formed in the film forming step is irradiated with an etching beam to perform etching (see Fig. 8(b)). When the film 20a is irradiated with the etching beam, the film 20a is gradually scraped in the irradiation direction of the beam. Therefore, the film 20a formed on the surface of the substrate 10 is formed on the upper surface of the convex portion 11 and the portion formed on the upper surface of the concave portion 12 in FIG. 8(b) by the etching beam. is cut around Film 20b in Fig. 8(b) shows the state after the etching step. In addition, a dotted line L1 shown in the figure indicates the position of the surface of the film 20a after the film forming step. As described above, the direction in which the film formation material is irradiated to the substrate 10 and the direction in which the substrate 10 is irradiated with the etching beam in the film formation step are inclined with respect to the normal line N, and both The irradiation (incident) angle of is set to be the same. Therefore, the thicker the film thickness, the greater the amount of etching. On the other hand, a part of the material scraped off by etching adheres to the film and becomes a part of the film. At this time, since it is easy to adhere especially to the part not irradiated with the etching beam, the part with a thin film thickness tends to become thicker by the adhering material.

<Excellent points of the film forming method and film forming apparatus according to the present embodiment>

According to the film forming method and film forming apparatus 1 according to the present embodiment, the surface of the substrate 10 is inclined by inclining the direction in which the substrate 10 is irradiated with the film forming material in the film forming step with respect to the normal line N. The film thickness of the film to be formed is made different depending on the position. Then, by setting the direction in which the film formation material is irradiated to the substrate 10 in the film formation step and the direction (incidence angle) in which the etching beam is irradiated to the substrate 10 are the same, by the etching beam, In the part where the film is thick, it is sheared to become thin, and in the part where the film is thin, a part of the sheared material adheres and becomes thick. This makes it possible to make the surface of the film flat and even.

On the other hand, in this embodiment, the surface of the film formed on the surface of the substrate 10 can be made flat even when the film forming process and the etching process are performed only once (when the number of repetitions N = 1 described above). Then, if it is desired to increase the film thickness, the number of repetitions N may be set so as to achieve a desired film thickness. Also in this case, the film thickness can be gradually increased while making the surface of the film flat and even.

On the other hand, in the above description, the convex portion 11 and the concave portion 12 formed on the surface side of the substrate 10 have a cross-sectional shape (in the direction in which the convex portion 11 and the concave portion 12 extend). The case where the shape of the cross section perpendicular to the cross section) is a rectangle has been described. However, in this invention, about the shape of a convex part and a concave part, it is not limited to such a shape. For example, as shown in FIG. 9 , the cross-sectional shape of the convex portion 11 and the concave portion 12 (the shape of the cross section perpendicular to the direction in which the convex portion 11 and the concave portion 12 extend) is It is applicable even in case of trapezoid. On the other hand, FIG. 9 shows the case of the first conveyance mode as a case of using such a substrate 10, (a) of the same figure shows a film forming process, and (b) of the same figure shows an etching process. indicates

Fig. 9(a) shows a film 20a formed by the film forming step. As shown, even in the case of the substrate 10 having a trapezoidal cross-sectional shape, among the films formed on the upper surface of the convex portion 11, the film thickness becomes thicker toward the right side in the drawing, and the upper surface of the concave portion 12 In , the film thickness in the vicinity blocked by the convex portion 11 becomes thin. On the other hand, on the upper surface of the concave portion 12, there is also a portion where a film is hardly formed.

Then, the film 20a formed in the film forming step is irradiated with an etching beam to perform etching (see Fig. 9(b)). When the film 20a is irradiated with the etching beam, the film 20a is gradually scraped in the irradiation direction of the beam. Accordingly, the film 20a formed on the surface of the substrate 10 is scraped around the right side of the drawing of the portion formed on the upper surface of the convex portion 11 in FIG. 9(b) by the etching beam. Film 20b in Fig. 9(b) shows the state after the etching step. In addition, a dotted line L1 shown in the figure indicates the position of the surface of the film 20a after the film forming step. Similarly, in the case of the substrate 10 having a trapezoidal cross-sectional shape of the irregularities, the thicker the film thickness, the larger the amount cut by etching, and a part of the material cut by etching adheres to the film, and a part of the film do. At this time, since it is easy to adhere especially to the part not irradiated with the etching beam, the part with a thin film thickness tends to become thicker by the adhering material. Therefore, as in the case described above, the surface of the film becomes flat and even.

(etc)

In the above embodiment, the case where the etching beam is an ion beam has been described. However, the etching beam is not limited to an ion beam, and a laser beam can also be used. For example, when the material of the film to be etched is an inorganic film (SiN, etc.), an oxide film (SiO2, ITO, etc.), or a metal film (Al, Cu, etc.), an ion beam (Ar, Xe, etc.) generated ion beam) is preferred. In contrast, when the material of the film to be etched is an organic film (organic compound or the like), it is preferable to use a laser beam. In the case of the former, the beam diameter is relatively large, whereas in the case of the latter, the beam diameter is relatively small. Moreover, in the case of the latter, it is more effective if a photothermal conversion material is contained in the film|membrane or base layer.

1: Tabernacle device
10: substrate
11: convex part
12: recess
15: substrate conveying device
15a: holding member
15b: support member
15c: connection member
15d: rolling elements
20a, 20b, 20c, 20d: film
100: Stockersil
111: tactile table
112: guide rail
121: driving source
122: guide rail
200: air pressure conversion room
210: guide rail
221, 222: heater
300: processing room
300a: pre-processing area
300b: tabernacle area
300c: etching area
301: chamber
302: guide rail
303 exhaust pump
304: gas supply valve
310: substrate processing device
320: sputter device
330: etching device
331 ion source
331a: ion beam
331a: beam for etching
332 cathode
333: beam irradiation surface
334 anode
335: permanent magnet
336: high voltage power supply
C: control unit
F: holding surface
N: Normal

Claims (11)

A film formation method in which convex portions extending in a first direction and concave portions extending in the first direction are alternately formed along a second direction intersecting the first direction to form a film, comprising:
a film forming step of irradiating the substrate with a film forming material to form a thin film;
After the step of forming the thin film, an etching step of performing etching by irradiating an etching beam to the substrate on which the thin film is formed,
The film formation method characterized in that the direction in which the film formation material is irradiated and the direction in which the etching beam is irradiated are inclined with respect to a normal line of the film formation surface of the substrate, and both irradiation angles are set to be the same. According to claim 1,
The film forming process and the etching process are performed while conveying the substrate. According to claim 2,
A film forming method capable of changing the direction in which the substrate is conveyed. According to any one of claims 1 to 3,
A film forming method characterized in that both a direction of irradiating the film forming material and a direction of irradiating the etching beam in the film forming step are perpendicular to the first direction. According to any one of claims 1 to 3,
A film forming method characterized in that both a direction of irradiating the film forming material and a direction of irradiating the etching beam in the film forming step are parallel to a plane including the first direction and the normal line. According to any one of claims 1 to 3,
An angle on the acute angle side among angles at which the normal line intersects with the direction in which the film-forming material is irradiated in the film forming step, and an angle on the acute angle side among angles at which the etching beam and the normal line intersect are both 10° or more 75 A film forming method characterized in that it is ° or less. According to any one of claims 1 to 3,
The film formation method according to claim 1 , wherein the etching beam is an ion beam or a laser beam. A film forming apparatus for forming a film on a substrate on which convex portions extending in a first direction and concave portions extending in the first direction are alternately formed along a second direction intersecting the first direction,
chamber,
a film formation material irradiation device provided in the chamber and irradiating a film formation material toward the substrate;
an etching device provided on a downstream side of the film formation material irradiation device in the chamber and irradiating an etching beam toward the substrate on which the film formation material is formed;
A control device for controlling the film formation material irradiation device and the etching device is provided;
The film formation apparatus characterized in that the direction in which the film formation material is irradiated and the direction in which the etching beam is irradiated are inclined with respect to a normal line of the film formation surface of the substrate, and both irradiation angles are set to be the same. According to claim 8,
A substrate conveying device for conveying the substrate is provided;
The film forming apparatus characterized in that the control device also controls transport by the substrate transport device. According to claim 9,
In the chamber, a region where the film formation material irradiation device is provided and a region where the etching device is provided are separately provided, and the substrate is transported to each of the regions by the substrate transport device. . According to any one of claims 8 to 10,
The film formation apparatus characterized in that the control device performs control to repeatedly operate each of the film formation material irradiation device and the etching device a preset number of times.

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