CN112981331B - Film forming method and film forming apparatus - Google Patents
Film forming method and film forming apparatus Download PDFInfo
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- CN112981331B CN112981331B CN202011385908.0A CN202011385908A CN112981331B CN 112981331 B CN112981331 B CN 112981331B CN 202011385908 A CN202011385908 A CN 202011385908A CN 112981331 B CN112981331 B CN 112981331B
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- 238000000034 method Methods 0.000 title claims abstract description 87
- 239000010408 film Substances 0.000 claims abstract description 241
- 239000000758 substrate Substances 0.000 claims abstract description 185
- 238000005530 etching Methods 0.000 claims abstract description 120
- 239000000463 material Substances 0.000 claims abstract description 54
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 30
- 230000001678 irradiating effect Effects 0.000 claims abstract description 22
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 238000010884 ion-beam technique Methods 0.000 claims description 18
- 230000001154 acute effect Effects 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 39
- 150000002500 ions Chemical class 0.000 description 22
- 239000007789 gas Substances 0.000 description 16
- 238000004544 sputter deposition Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- 238000005096 rolling process Methods 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
- C23C14/5833—Ion beam bombardment
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention provides a film forming method and a film forming device capable of coating a surface with a prescribed film thickness while maintaining the shape of a concave-convex surface when forming a thin film on the surface of a substrate on which convex portions and concave portions are formed. A film formation method for forming a film on a substrate (10) having a convex portion extending in a 1 st direction and a concave portion extending in the 1 st direction alternately formed along a 2 nd direction intersecting the 1 st direction, the film formation method comprising: a film forming step of irradiating a film forming material onto a substrate (10) to form a thin film; and an etching step of irradiating the substrate (10) on which the thin film is formed with an etching beam, and etching the substrate, wherein the direction of irradiating the film-forming material and the direction of irradiating the etching beam are inclined with respect to the normal line of the film-forming surface of the substrate (10), and the irradiation angles of the two are set to be the same.
Description
Technical Field
The present invention relates to a film forming method and a film forming apparatus for forming a thin film on a substrate.
Background
Conventionally, a technique of forming a thin film on a substrate by sputtering or the like has been known. However, when the substrate surface is provided with irregularities, cavities called voids may be formed in the formed thin film. This will be described with reference to fig. 10. Fig. 10 is a schematic cross-sectional view of a substrate on which a thin film is formed by a film forming method according to a conventional example.
Convex portions 711 and concave portions 712 are provided on the surface of the illustrated substrate 710. Fig. 10 (a) shows an initial state during the film formation process. As shown in the figure, the film 720a formed is formed such that a part of the film formed on the upper surface of the convex portion 711 protrudes toward the concave portion 712 side and covers the same. Therefore, when the film formation process is directly performed, a void V is formed above the concave portion 712. Fig. 10 (b) shows a state where film formation is performed until the upper surface of the thin film 720b is substantially planar. In this way, if the voids V are formed, the desired functions and qualities may not be obtained. The reason why the voids are generated is that the film forming rate varies depending on the upper surface of the concave portion, the upper surface of the convex portion, and the side surface of the substrate to which the particles are attached by sputtering, and the film thickness varies.
Prior art literature
Patent literature
Patent document 1: japanese patent application laid-open No. 2015-529444
Patent document 2: japanese patent application laid-open No. 2012-67394
Disclosure of Invention
Problems to be solved by the invention
The invention aims to provide a film forming method and a film forming device capable of coating a surface with a prescribed film thickness while maintaining the shape of a concave-convex surface when forming a thin film on the surface of a substrate on which convex portions and concave portions are formed.
Means for solving the problems
In order to solve the above problems, the present invention adopts the following means.
That is, the film forming method of the present invention forms a film on a substrate having a convex portion extending in the 1 st direction and a concave portion extending in the 1 st direction alternately formed along the 2 nd direction intersecting the 1 st direction,
the film forming method comprises the following steps:
a film forming step of irradiating the substrate with a film forming material to form a thin film; and
an etching step of irradiating the substrate on which the thin film is formed with an etching beam to perform etching,
the direction of irradiating the film-forming material and the direction of irradiating the etching beam are inclined with respect to the normal line of the film-forming surface of the substrate, and the irradiation angles of both are set to be the same.
Here, "the irradiation angles of both are set to be the same" means that although it is desirable that the irradiation angles of both are the same, it is also included that some deviation occurs in the irradiation (incidence) angle due to dimensional tolerances of various members or some influence.
According to the present invention, the direction in which the film forming material is irradiated onto the substrate in the film forming step is inclined with respect to the normal line, so that the film thickness of the film formed on the substrate surface is intentionally varied depending on the position. In addition, by setting the direction of irradiating the film forming material to the substrate and the direction of irradiating the etching beam to the substrate (incidence angle) in the film forming step to be the same, the etching beam is used to shave off and thin the film at a thicker portion, and a part of the shaved material is attached and thickened at a thinner portion. Thus, the film surface can be flattened flat.
ADVANTAGEOUS EFFECTS OF INVENTION
As described above, according to the present invention, when a thin film is formed on a substrate surface having projections and recesses formed thereon, the surface can be coated with a uniform film thickness while maintaining the uneven shape of the surface.
Drawings
FIG. 1 is a schematic configuration diagram of the inside of a film forming apparatus according to an embodiment of the present invention.
Fig. 2 is a flowchart showing an operation of the film forming apparatus according to the embodiment of the present invention.
FIG. 3 is an explanatory view of the operation of the film forming apparatus according to the embodiment of the present invention.
FIG. 4 is a schematic configuration diagram of the inside of a film forming apparatus according to an embodiment of the present invention.
Fig. 5 is an explanatory view of an ion source according to the embodiment of the present invention.
Fig. 6 is an explanatory diagram of a film forming method according to an embodiment of the present invention.
Fig. 7 is an explanatory diagram of a film forming method according to an embodiment of the present invention.
Fig. 8 is an explanatory diagram of a film forming method according to an embodiment of the present invention.
Fig. 9 is an explanatory diagram of a film forming method according to an embodiment of the present invention.
Fig. 10 is a schematic cross-sectional view of a substrate on which a thin film is formed by a film forming method according to a conventional example.
Description of the reference numerals
A film forming apparatus, 10 substrates, 11 convex portions, 12 concave portions, 15 substrate conveying apparatus, 15a holding member, 15b supporting member, 15C connecting member, 15d rolling element, 20a, 20b, 20C, 20d film, 100 stock room, 111 mounting table, 112 guide rail, 121 driving source, 122 guide rail, 200 gas pressure switching chamber, 210 guide rail, 221, 222 heater, 300 process chamber, 300a pretreatment region, 300b film forming region, 300C etching region, 301 chamber, 302 guide rail, 303 exhaust pump, 304 gas supply valve, 310 substrate processing apparatus, 320 sputtering apparatus, 330 etching apparatus, 331 ion source, 331a ion beam, 331a etching beam, 332 cathode, 333 beam irradiation surface, 334 anode, 335 permanent magnet, 336 high voltage power source, C control apparatus, F holding surface, N normal.
Detailed Description
Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. However, the following embodiments are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. The hardware configuration and software configuration, processing flow, manufacturing conditions, size, material, shape, and the like of the device in the following description are not meant to limit the scope of the present invention only unless specifically described.
(embodiment)
A film forming method and a film forming apparatus according to an embodiment of the present invention will be described with reference to fig. 1 to 9. Fig. 1 is a schematic configuration diagram of the inside of a film forming apparatus according to an embodiment of the present invention, and shows a schematic configuration when the whole inside of the film forming apparatus is viewed from above. Fig. 2 is a flowchart showing an operation of the film forming apparatus according to the embodiment of the present invention. FIG. 3 is an explanatory view of the operation of the film forming apparatus according to the embodiment of the present invention. Fig. 4 is a schematic configuration diagram of the inside of the film forming apparatus according to the embodiment of the present invention, and shows a schematic configuration of the vicinity of the etching apparatus when viewed in the substrate transport direction. Fig. 5 is an explanatory view of an ion source as an etching apparatus according to an embodiment of the present invention, where (a) of fig. 5 is a front view showing a beam irradiation surface of the ion source, (b) of fig. 5 is a AA cross-sectional view in (a) of fig. 5, and (c) of fig. 5 is a graph showing etching intensity in a longitudinal direction of the ion beam. Fig. 6 to 9 are explanatory views of a film forming method according to an embodiment of the present invention.
< integral Structure of film Forming apparatus >
With particular reference to fig. 1, the overall configuration of the film forming apparatus 1 of the present embodiment will be described. The film forming apparatus 1 includes: a stocker chamber 100 that accommodates a substrate 10 to be subjected to a film formation process; an air pressure switching chamber 200 for switching the chamber between an atmospheric state and a vacuum state; and a processing chamber 300 for performing various processes on the processing surface of the substrate 10.
The stocker 100 serves to house a plurality of substrate transport devices 15, and the substrate transport devices 15 can transport the substrates 10 while holding them. The stocker 100 is provided with a stage 111 on which a plurality of substrate transfer devices 15 are placed, and a drive mechanism for reciprocating the stage 111. The driving mechanism includes a driving source 121 such as a motor for rotating the ball screw, a guide rail 122 for restricting the moving direction of the mounting table 111, and the like. However, the driving mechanism for reciprocating the mounting table 111 is not limited to such a configuration, and various known techniques can be employed. The mounting table 111 is provided with a plurality of guide rails 112 for restricting the movement direction of the substrate transport apparatus 15.
In order to transfer the substrate transfer device 15 transferred from the atmospheric storage chamber 100 to the processing chamber 300 in a vacuum state, the air pressure switching chamber 200 serves to switch the chamber from the atmospheric state to the vacuum state at a stage before being transferred to the processing chamber 300. The air pressure switching chamber 200 of the present embodiment is provided with heaters 221 and 222 for heating the substrate 10. That is, if the substrate 10 is directly transported to the processing chamber 300 at normal temperature, various gases are generated from the substrate 10, and adverse effects are generated during film formation. Therefore, the substrate 10 is heated by the heaters 221 and 222, so that the gas can be forcibly generated in advance, and the gas generation in the process chamber 300 can be suppressed. The air pressure switching chamber 200 is also provided with a guide rail 210 for restricting the moving direction of the substrate transfer apparatus 15.
The processing chamber 300 includes a chamber 301 having a vacuum atmosphere therein and a guide rail 302 for restricting the movement direction of the substrate transfer apparatus 15. As the mechanism for reciprocating the substrate conveying device 15, various known techniques can be applied, and thus detailed description thereof will be omitted, but a driving mechanism based on a ball screw, a rack and pinion mechanism, or the like can also be applied.
A pretreatment region 300a, a film formation region 300b, and an etching region 300c are provided in the processing chamber 300. In the pretreatment area 300a, a substrate treatment apparatus 310 for performing pretreatment such as cleaning of the treatment surface of the substrate 10 before the film formation treatment is provided. The film formation region 300b is provided with a sputtering device 320 as a film formation material irradiation device that performs a film formation process on the processing surface of the substrate 10. Further, an etching device 330 for etching the film formed on the substrate 10 by the sputtering device 320 is provided in the etching region 300c. The space provided in the front stage of the substrate processing apparatus 310 in the pretreatment area 300a is a space where the substrate transport apparatus 15 stands by before the substrate processing apparatus 310 performs pretreatment. The film forming apparatus 1 according to the present embodiment has a so-called inline configuration in which a series of processes are performed on the substrate 10 while the substrate 10 is held and transported.
< action of the film Forming apparatus as a whole >
The film forming apparatus 1 includes a control device C for controlling the drive mechanism for reciprocating the stage 111, the air pressure in the air pressure switching chamber 200, the air pressures in the heaters 221 and 222 and the processing chamber 300, the substrate processing apparatus 310, the sputtering apparatus 320, and the etching apparatus 330, and also for controlling the conveyance of the substrate 10 by the substrate conveying apparatus 15. The following operations (film forming step, etching step, etc.) are performed by being controlled by the control device C. The control device C may be configured by a computer having a processor, a memory, a storage, an I/O, and the like, for example. In this case, the function of the control device C is realized by the processor executing a program stored in the memory or the storage. As the computer, a general-purpose personal computer may be used, or an embedded computer or PLC (programmable logic controller) may be used. Alternatively, a part or all of the functions of the control device C may be configured by a circuit such as an ASIC or FPGA. The control device C may be configured to transmit a control command through a wire connected to various devices or the like to be controlled, or may be configured to transmit a control command to various devices or the like through a wireless line. Hereinafter, the overall operation of the film forming apparatus 1 will be described with reference to fig. 2 in particular.
< preparation procedure >
The stocker 100 accommodates a plurality of substrate transport devices 15 each holding a substrate 10. The substrate transfer device 15 that holds the substrate 10 to be processed is transferred from the stocker 100 to the air pressure switching chamber 200 (step S101). In the air pressure switching chamber 200, a decompression operation is performed, and the chamber is switched from an atmospheric state to a vacuum state. In addition, the heating process for the substrate 10 is performed simultaneously according to the material of the substrate 10 (step S102). For example, the substrate 10 is heated from about 100 ℃ to about 180 ℃ by a heating process for about ten minutes. Thereafter, the substrate 10 is transferred from the gas pressure switching chamber 200 to the pretreatment region 300a of the process chamber 300 (step S103). In the pretreatment region 300a, the surface treatment by the ion beam irradiation is performed on the treatment surface of the substrate 10 by the substrate treatment apparatus 310 (step S104).
< film Forming Process >
Next, the substrate 10 is conveyed to the film formation region 300b (step S105), and a sputtering process is performed on the processing surface of the substrate 10 by the sputtering apparatus 320 (step S106). The sputtering apparatus 320 is a well-known technique, and therefore, a detailed description thereof is omitted, but it is provided with a target or the like that releases a film-forming material by applying a high voltage. The target may be a flat plate-shaped target or a rotatable cylindrical target.
Etching procedure-
The substrate 10 subjected to the film formation process is transported to the etching region 300c (step S107), and the etching process is performed by the etching apparatus 330 (step S108).
After the etching process is performed, the control device C determines whether or not the number of times X of sputtering reaches N (step S109), and if N is not reached, the substrate 10 returns to the film formation region 300b, and the film formation process and the etching process are performed again. In this embodiment, the film formation process and the etching process are repeated a predetermined number of times N. The lower arrows T11, T21, T12, T22, …, and T1X, T X in fig. 1 indicate the movement process of the substrate 10 (substrate conveying device 15). After repeating the film forming process and the etching process N times, the processed substrate 10 is transported to the gas pressure switching chamber 200, and after being switched from the vacuum state to the atmospheric state, is transported to the stocker 100.
In the present embodiment, a configuration is shown in which the substrate transport apparatus 15 is carried in and out in the stocker chamber 100 and the air pressure switching chamber 200 provided at one end side of the processing chamber 300. However, the following structure can be adopted for the stocker chamber 100 and the atmospheric pressure switching chamber 200 provided at one end side of the processing chamber 300: only the substrate transfer device 15 is operated, and an air pressure switching chamber for transferring the substrate transfer device 15 and a stocker for accommodating the processed substrate 10 are provided at the other end side of the processing chamber 300.
The film forming apparatus 1 of the present embodiment can be applied to, for example, various electrode formation accompanied by pretreatment. Specific examples thereof include a plating seed film for an FC-BGA (Flip-Chip Ball Grid Array) mounting substrate and a metal laminate film for a SAW (Surface Acoustic Wave) device. Further, a conductive hard film at the junction of the LED, a film at the terminal of the MLCC (Multi-Layered Ceramic Capacitor), and the like can be cited. In addition to this, the present invention can be applied to the formation of an electromagnetic shielding film in an electronic component package and a terminal portion film of a chip resistor. The size of the substrate 10 is not particularly limited, but in the present embodiment, a substrate 10 having a size of about 200mm×200mm is used. The material of the substrate 10 is arbitrary, and for example, a substrate such as polyimide, glass, silicon, metal, or ceramic is used.
< substrate processing apparatus and etching apparatus >
Referring specifically to fig. 3 (b) and 4, the substrate processing apparatus 310 and the etching apparatus 330 are described. The basic structures of the substrate processing apparatus 310 and the etching apparatus 330 are the same. That is, the substrate processing apparatus 310 and the etching apparatus 330 are apparatuses for performing a process of cleaning or etching a surface (a processing surface) of a substrate by ion beam irradiation. Thus, since the basic structures of both are the same, the etching device 330 is described here.
The etching apparatus 330 includes an ion source 331 and a high-voltage power supply 336 for applying a voltage to the ion source 331. Also shown in fig. 4 is an ion beam 331a that is irradiated from the ion source 331.
The chamber 301 in the process chamber 300 is an airtight container, and the inside thereof is maintained in a vacuum state (or a reduced pressure state) by an exhaust pump 303. By opening the gas supply valve 304 and supplying gas into the chamber 301, the gas atmosphere (or pressure zone) can be changed appropriately for the process. The entire chamber 301 is electrically grounded. The substrate transport apparatus 15 is configured to be movable on a guide rail 302 laid on the bottom surface of the chamber 301 while holding the substrate 10 in a vertical posture so that the processing surface of the substrate 10 is along the vertical direction. The guide rail 302 extends in a direction parallel to the surface of the substrate 10, and the substrate transport apparatus 15 is moved in a direction parallel to the surface of the substrate 10 by a driving mechanism not shown.
The substrate transfer apparatus 15 includes: a holding member (substrate holder) 15a that holds the substrate 10; a supporting member (conveying carrier) 15b that supports the holding member 15a; a connecting member 15c that mechanically connects the holding member 15a and the supporting member 15b while electrically insulating them; and rolling elements 15d provided at the lower end of the support member 15 b. The substrate transport apparatus 15 moves along the guide rail 302 by rolling the rolling bodies 15d on the guide rail 302. The surface on which the substrate 10 is held by the holding member 15a is referred to herein as a holding surface F.
Fig. 3 b shows the case of the etching device 330 and the substrate transfer device 15 in the step of performing the etching process (etching step) while the substrate transfer device 15 moves in the directions of arrows T11, T12, and T1X in fig. 1. The distance between the ion source 331 and the substrate 10 is set to be about 100mm to 200mm. The high-voltage power supply 336 is configured to apply an anode voltage (about several kV) to the ion source 331.
< ion Source >
Referring specifically to fig. 5, ion source 331 is illustrated in greater detail. The ion source 331 includes a cathode 332, a beam irradiation surface 333, an anode 334, and a permanent magnet 335. In the present embodiment, the cathode 332 doubles as the housing of the ion source 331. The cathode 332 and the anode 334 are respectively formed of SUS, and are electrically insulated. The cathode 332 is electrically grounded by being fixed to the chamber 301. On the other hand, the anode 334 is connected to a high-voltage power supply 336. In this configuration, when a high voltage is applied to the anode 334 from the high voltage power supply 336, an ion beam is emitted from an emission opening of the beam irradiation surface 333 provided in the case (cathode 332). As the principle of the ion source 331, there are a type in which gas is introduced from the back surface side of the case to generate ions inside the case and a type in which ambient gas existing outside the case is ionized, but any type may be used. In fig. 4, the latter case is shown, and gas is supplied into the chamber 301 by opening the gas supply valve 304. As the gas, argon, oxygen, nitrogen, or the like can be used.
The ion source 331 of the present embodiment has a beam irradiation surface 333 having an elongated shape (linear shape or racetrack shape) of about 300mm to 400mm×about 70mm so that the outlet opening has a long side direction and a short side direction. The ion source 331 is disposed so that the longitudinal direction of the outlet opening intersects the conveyance direction of the substrate 10. By using such a long ion source 331, the ion beam is irradiated in the entire longitudinal direction (direction orthogonal to the transport direction) of the substrate 10. Therefore, the entire surface of the substrate 10 can be irradiated with the beam by 1 beam scanning in the transport direction, and the surface treatment (etching treatment) can be performed at a higher speed (productivity improvement).
Fig. 5 (c) shows the etching intensity in the longitudinal direction of the ion beam emitted from the ion source 331. As shown in the figure, the intensity of the ion beam in the longitudinal direction is not uniform, and depending on the magnetic field design of the ion source 331, either a distribution in which the intensity of the center portion is large as in the broken line L2 or the intensity of the center portion is small as in the solid line L1 is adopted. If there is a deviation in the etching intensity distribution as in fig. 5 (c), the etching amount is not uniform, which is not preferable. Therefore, the beam irradiation surface 333 having a size of about 1.5 to 2 times is used for the substrate 10, whereby the etching intensity distribution can be made uniform.
< flow of surface treatment of substrate treatment apparatus >
According to the substrate processing apparatus 310 configured as described above, when the substrate 10 is transferred to the pretreatment region 300a of the processing chamber 300, the control apparatus C controls the high-voltage power supply to start beam irradiation by the ion source. In this state, the control device C moves the substrate transport device 15 at a constant speed, and causes the ion beam to pass through the substrate 10. By such a method, the surface of the substrate 10 is irradiated with an ion beam, and the surface side of the substrate 10 is subjected to a surface treatment (cleaning treatment). By adopting such a configuration for performing beam scanning, the entire substrate can be processed with an ion beam having an irradiation range smaller than the area of the substrate 10, and thus the ion source can be miniaturized, and the entire apparatus can be miniaturized. In addition, by adopting a configuration in which the substrate 10 is supported in a posture in which the processing surface of the substrate 10 is in the vertical direction and the processing surface is irradiated with an ion beam in the horizontal direction, particles scraped off by etching fall down by the action of gravity and do not remain on the processing surface of the substrate 10, and therefore there is an advantage in that occurrence of processing unevenness due to the remaining of particles can be prevented.
< film Forming Process and etching Process >
The film forming step and the etching step will be described in more detail with reference to fig. 3 and fig. 6 to 9 in particular. The film forming method and the film forming apparatus according to the present embodiment are preferably used in the case of forming a thin film on the surface of the substrate 10 having the linear protrusions 11 and the linear recesses 12 alternately formed on the surface side. That is, the film forming method and the film forming apparatus according to the present embodiment are preferably used in the case of forming a film on the substrate 10 on which the convex portion 11 extending in the 1 st direction and the concave portion 11 extending in the 1 st direction are alternately formed along the 2 nd direction intersecting the 1 st direction.
Fig. 3 (a) shows the substrate transport apparatus 15 and the sputtering apparatus 320 in the film formation process, and fig. 3 (b) shows the substrate transport apparatus 15 and the etching apparatus 330 in the etching process. In the present embodiment, the film forming step and the etching step are performed while conveying the substrate 10 in directions indicated by lower arrows T11, T12, and T1X in fig. 1. Further, when the substrate 10 is conveyed in the directions of the lower arrows T21, T22, and T2X in fig. 1, the operations of the sputtering apparatus 320 and the etching apparatus 330 are stopped.
Fig. 6 shows two preferable examples of the film forming method and the film forming apparatus according to the present embodiment, with respect to the method of conveying the substrate 10. Hereinafter, the "1 st conveyance mode" and the "2 nd conveyance mode" are referred to, respectively. Fig. 6 (a) shows a case of the substrate 10 in the case of the 1 st conveyance system. As shown in the figure, in the 1 st conveyance method, the substrate 10 is conveyed in a direction (2 nd direction) perpendicular to a direction (1 st direction) in which the groove-like step formed by the convex portion 11 and the concave portion 12 of the substrate 10 extends. Fig. 6 (b) shows the case of the substrate 10 in the case of the 2 nd conveyance system. As shown in the figure, in the 2 nd conveyance method, the substrate 10 is conveyed in parallel to the direction (1 st direction) in which the groove-like step formed by the convex portion 11 and the concave portion 12 of the substrate 10 extends.
Fig. 7 shows the 1 st conveyance method, fig. 7 (a) shows a film forming step, and fig. 7 (b) shows an etching step. The substrate 10 in fig. 7 corresponds to the BB cross section in fig. 6 (a). Fig. 8 shows the 2 nd conveyance method, fig. 8 (a) shows a film forming step, and fig. 8 (b) shows an etching step. The substrate 10 in fig. 8 corresponds to the CC section in fig. 6 (b). In fig. 6 to 8, the substrate transport apparatus 15 is omitted, and only the substrate 10 transported by the substrate transport apparatus 15 is shown. In the following description, for convenience, a normal line of the holding surface F held by the holding member 15a holding the conveyed substrate 10 is referred to as a "normal line N". The beam irradiated in the etching step is referred to as an "etching beam". The normal N can also be referred to as a normal to the film formation surface of the substrate 10.
In the film forming method and the film forming apparatus 1 of the present embodiment, the direction in which the film forming material is irradiated to the substrate 10 and the irradiation direction of the etching beam in the film forming process are directions parallel to a plane including the normal line N and a direction parallel to the direction in which the substrate 10 is conveyed. In the film forming step, the direction in which the film forming material is irradiated onto the substrate 10 and the direction in which the etching beam is irradiated onto the substrate 10 are inclined with respect to the normal line N, and the irradiation angles (incidence angles) of both are set to be the same. The phrase "the irradiation angles of both are set to be the same" means that although it is desirable that the irradiation angles of both are the same, it also includes cases where some deviation occurs in the irradiation angles due to dimensional tolerances of various members or some influence. In the film forming step, the angle on the acute angle side of the angle at which the direction of irradiating the film forming material onto the substrate 10 intersects the normal line N and the angle on the acute angle side of the angle at which the etching beam intersects the normal line N are both 10 ° to 75 °. In the film forming step, the angle on the acute angle side of the angle at which the direction of irradiating the film forming material onto the substrate 10 intersects with the normal line N corresponds to the angle α in fig. 7 (a). The angle on the acute angle side of the angle at which the etching beam intersects the normal line N corresponds to the angle α in fig. 7 (b). The direction in which the film forming material is irradiated to the substrate 10 and the irradiation direction of the etching beam in the film forming step are the same in both the case of the 1 st conveyance system and the case of the 2 nd conveyance system.
In the case of the 1 st conveyance method, the direction in which the film forming material is irradiated onto the substrate 10 and the direction in which the etching beam is irradiated onto the substrate 10 in the film forming step are perpendicular to the direction in which the groove-like step formed by the convex portion 11 and the concave portion 12 extends (1 st direction). In the case of the 2 nd conveyance method, the direction in which the film forming material is irradiated onto the substrate 10 and the direction in which the etching beam is irradiated onto the substrate 10 in the film forming step are both parallel to the plane including the normal N and the direction (1 st direction) in which the groove-like step formed by the convex portion 11 and the concave portion 12 extends.
< 1 st delivery mode >
With reference to fig. 7 in particular, a film formation method in the film formation process and an etching method in the etching process in the case of the 1 st conveyance system will be described. The film-forming material irradiated from the sputtering apparatus 320 (target) toward the substrate 10 has a film thickness that gradually increases on the surface of the substrate 10 with respect to the irradiation direction of the film-forming material. Fig. 7 (a) shows a film 20a formed by the film forming step. As shown in the drawing, the film thickness of the film formed on the upper surface of the convex portion 11 is thicker toward the right in the drawing, and the film thickness of the film in the vicinity shielded by the convex portion 11 is thinner on the upper surface of the concave portion 12.
Then, the film 20a formed in the film forming step is irradiated with an etching beam, and is etched (see fig. 7 (b)). When the etching beam is irradiated onto the film 20a, the film 20a is gradually scraped off with respect to the irradiation direction of the beam. Therefore, the film 20a formed on the surface of the substrate 10 is scraped off by the etching beam around the right side in the drawing of the portion formed on the upper surface of the convex portion 11 in fig. 7 (b). The film 20b in fig. 7 (b) shows a state after the etching process. The broken line L1 in the drawing indicates the position of the surface of the film 20a after the film formation step. As described above, in the film forming step, the direction in which the film forming material is irradiated onto the substrate 10 and the direction in which the etching beam is irradiated onto the substrate 10 are inclined with respect to the normal line N, and the irradiation (incidence) angles of both are set to be the same. Therefore, the thicker the film thickness, the greater the amount of the portion to be scraped off by etching. In addition, a part of the material scraped off by etching adheres to the film and becomes a part of the film. In this case, particularly, since the etching beam is easily attached to a portion where the etching beam is not irradiated, a portion having a small film thickness tends to be thickened by an attached material.
< 2 nd delivery mode >
With reference to fig. 8 in particular, a film formation method in the film formation process and an etching method in the etching process in the case of the 2 nd conveyance system will be described. The film-forming material irradiated from the sputtering apparatus 320 (target) toward the substrate 10 has a film thickness that gradually increases on the surface of the substrate 10 with respect to the irradiation direction of the film-forming material. Fig. 8 (a) shows a film 20a formed by the film forming step. As shown in the drawing, the film thickness of the film formed on the upper surface of the convex portion 11 and the upper surface of the concave portion 12 is thick, and the film thickness of the film formed on the side surface of the convex portion 11 (also referred to as the side surface of the concave portion 12) is thin.
Then, the film 20a formed in the film forming step is irradiated with an etching beam, and is etched (see fig. 8 b). When the etching beam is irradiated onto the film 20a, the film 20a is gradually scraped off with respect to the irradiation direction of the beam. Therefore, the film 20a formed on the surface of the substrate 10 is scraped off by the etching beam around the portion formed on the upper surface of the convex portion 11 and the portion formed on the upper surface of the concave portion 12 in fig. 8 (b). The film 20b in fig. 8 (b) shows a state after the etching process. The broken line L1 in the drawing indicates the position of the surface of the film 20a after the film formation step. As described above, in the film forming step, the direction in which the film forming material is irradiated onto the substrate 10 and the direction in which the etching beam is irradiated onto the substrate 10 are inclined with respect to the normal line N, and the irradiation (incidence) angles of both are set to be the same. Therefore, the thicker the film thickness, the greater the amount of the portion to be scraped off by etching. In addition, a part of the material scraped off by etching adheres to the film and becomes a part of the film. In this case, particularly, since the etching beam is easily attached to a portion where the etching beam is not irradiated, a portion having a small film thickness tends to be thickened by an attached material.
< advantages of the film Forming method and film Forming apparatus of the embodiment >
According to the film forming method and the film forming apparatus 1 of the present embodiment, the direction in which the film forming material is irradiated onto the substrate 10 in the film forming step is inclined with respect to the normal line N, so that the film thickness of the film formed on the surface of the substrate 10 is intentionally varied depending on the position. In the film forming step, the direction in which the film forming material is irradiated to the substrate 10 and the direction (incidence angle) in which the etching beam is irradiated to the substrate 10 are set to be the same, and the etching beam is used to shave off and thin the film at a portion where the film is thick, and a portion of the shaved material is attached and thickened at a portion where the film is thin. Thus, the film surface can be flattened flat.
In the present embodiment, even when the film formation process and the etching process are performed only 1 time (the number of repetitions n=1 described above), the surface of the film formed on the surface of the substrate 10 can be flattened. When the film thickness is to be increased, the number of repetitions N may be set so as to achieve a desired film thickness. In this case, the film thickness can be gradually increased while flattening the surface of the film.
In the above description, the case where the cross-sectional shapes of the convex portion 11 and the concave portion 12 formed on the front surface side of the substrate 10 (the shape of the cross-section perpendicular to the direction in which the convex portion 11 and the concave portion 12 extend) are rectangular has been described. However, in the present invention, the shapes of the convex and concave portions are not limited to such shapes. For example, as shown in fig. 9, the present invention can be applied to a case where the cross-sectional shapes of the convex portion 11 and the concave portion 12 (the cross-sectional shapes perpendicular to the extending direction of the convex portion 11 and the concave portion 12) are trapezoidal. Fig. 9 shows a case where such a substrate 10 is used, and also shows the case of the 1 st conveyance system, fig. 9 (a) shows a film forming step, and fig. 9 (b) shows an etching step.
Fig. 9 (a) shows a film 20a formed by the film forming step. As shown in the figure, even in the case of the substrate 10 having a trapezoidal cross-sectional shape, the film thickness of the film formed on the upper surface of the convex portion 11 is thicker toward the right in the figure, and the film thickness of the film in the vicinity shielded by the convex portion 11 is thinner on the upper surface of the concave portion 12. In addition, there is a portion where a film is hardly formed on the upper surface of the concave portion 12.
Then, the film 20a formed in the film forming step is irradiated with an etching beam, and is etched (see fig. 9 b). When the etching beam is irradiated onto the film 20a, the film 20a is gradually scraped off with respect to the irradiation direction of the beam. Therefore, the film 20a formed on the surface of the substrate 10 is scraped off by the etching beam around the right side in the drawing of the portion formed on the upper surface of the convex portion 11 in fig. 9 (b). The film 20b in fig. 9 (b) shows a state after the etching process. The broken line L1 in the drawing indicates the position of the surface of the film 20a after the film formation step. In the case of the substrate 10 having a trapezoidal cross-sectional shape, similarly, the thicker the film thickness, the greater the amount of material removed by etching, and a part of the material removed by etching adheres to the film to become a part of the film. In this case, particularly, since the etching beam is easily attached to a portion where the etching beam is not irradiated, a portion having a small film thickness tends to be thickened by an attached material. Therefore, the film surface is flattened in the same manner as in the above case.
(others)
In the above embodiment, the case where the etching beam is an ion beam is described. However, the etching beam is not limited to an ion beam, and a laser beam can be used. For example, the material of the film to be etched is an inorganic film (SiN or the like), an oxide film (SiO 2 ITO, etc.), and in the case of a metal film (Al, cu, etc.), an ion beam (an ion beam generated from rare gas such as Ar, xe, etc.) is preferably used. In contrast, when the material of the film to be etched is an organic film (an organic compound or the like), a laser beam is preferably used. The method has the following characteristics: in the former case, the beam diameter is relatively large, whereas in the latter case, the beam diameter is relatively small. In the latter case, when the light-heat conversion material is contained in the film or the base layer, the film is further provided withIs added effectively.
Claims (10)
1. A film formation method for forming a film on a substrate having a convex portion extending in a 1 st direction and a concave portion extending in the 1 st direction alternately formed along a 2 nd direction perpendicular to the 1 st direction, characterized in that,
the film forming method comprises the following steps:
a film forming step of irradiating the substrate with a film forming material to form a thin film; and
an etching step of irradiating the substrate on which the thin film is formed with an etching beam to perform etching,
the direction of irradiating the film-forming material and the direction of irradiating the etching beam are inclined in the same direction relative to the normal line of the film-forming surface of the substrate, and the irradiation angles of the film-forming material and the etching beam are set to be the same,
in the film forming step, the angle on the acute angle side of the angle at which the direction of irradiating the film forming material intersects the normal line and the angle on the acute angle side of the angle at which the etching beam intersects the normal line are both 10 DEG to 75 deg.
2. The method for forming a film according to claim 1, wherein,
the film forming step and the etching step are performed while the substrate is conveyed in the 2 nd direction or the substrate is conveyed parallel to the 1 st direction.
3. The method for forming a film according to claim 2, wherein,
the direction of conveying the substrate can be changed.
4. The method for forming a film according to any one of claim 1 to 3,
when the substrate is transported in the 2 nd direction, the direction in which the film forming material is irradiated and the direction in which the etching beam is irradiated in the film forming step are perpendicular to the 1 st direction.
5. The method for forming a film according to any one of claim 1 to 3,
when the substrate is transported parallel to the 1 st direction, the direction in which the film forming material is irradiated and the direction in which the etching beam is irradiated in the film forming step are both parallel to a plane including the 1 st direction and the normal line.
6. The method for forming a film according to any one of claim 1 to 3,
the etching beam is an ion beam or a laser beam.
7. A film forming apparatus for forming a film on a substrate having a convex portion extending in a 1 st direction and a concave portion extending in the 1 st direction alternately formed along a 2 nd direction perpendicular to the 1 st direction, the film forming apparatus comprising:
a chamber;
a film-forming material irradiation device provided in the chamber and irradiating the film-forming material toward the substrate;
an etching device provided in the chamber and configured to irradiate an etching beam toward the substrate; and
a control device for controlling the film forming material irradiation device and the etching device,
the direction of the film forming material irradiating device irradiating the film forming material and the direction of the etching device irradiating the etching beam are inclined at the same angle relative to the normal line of the film forming surface of the substrate, and the irradiation angles of the film forming material irradiating device and the etching device are set to be the same,
the angle of the film-forming material irradiation device on the acute angle side of the angle at which the direction of irradiation of the film-forming material intersects the normal line and the angle of the etching beam of the etching device on the acute angle side of the angle at which the etching beam intersects the normal line are both 10 DEG to 75 deg.
8. The film forming apparatus according to claim 7, wherein,
the film forming apparatus includes a substrate conveying device for conveying the substrate in the 2 nd direction or conveying the substrate parallel to the 1 st direction,
the control device also controls conveyance by the substrate conveyance device.
9. The film forming apparatus according to claim 8, wherein,
the chamber is provided with a region in which the film-forming material irradiation device is provided and a region in which the etching device is provided, and the substrate is transported to each of the regions by the substrate transport device.
10. The film forming apparatus according to any one of claims 7 to 9, wherein,
the control device controls the film forming material irradiation device and the etching device to repeatedly operate for a preset number of times.
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| JP2019218109A JP7382809B2 (en) | 2019-12-02 | 2019-12-02 | Film-forming method and film-forming equipment |
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| JP2021088733A (en) | 2021-06-10 |
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| CN112981331A (en) | 2021-06-18 |
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