JP6556822B2 - Substrate processing method, substrate processing apparatus, and film forming apparatus - Google Patents

Description

  The present invention relates to a substrate processing method, a substrate processing apparatus, and a film forming apparatus.

In a semiconductor device film forming apparatus, a substrate surface cleaning process using an ion beam or plasma may be performed prior to the film forming process. In such a cleaning process, an atmospheric gas is selected according to the purpose. For example, in Patent Document 1, a mixed gas of argon and oxygen (Ar + O ₂ ) is used for the removal treatment of the organic material film, and the ratio of argon and oxygen is 97%: 3 in order to obtain a high ashing rate. It is disclosed that it is good to set to%. In Patent Document 2, oxygen and nitrogen mixed gas (O ₂ + N ₂ ), hydrogen and argon mixed gas (H ₂ + Ar), and argon and nitrogen mixed gas are used as atmospheric gases for cleaning the polymer debris. (Ar + N ₂ ), a mixed gas of oxygen and argon (O ₂ + Ar) is disclosed. Further, Patent Document 3 discloses a mixed gas of argon, oxygen, and chlorine (Ar + O ₂ + Cl ₂ ) and a mixed gas of argon and oxygen (Ar + O ₂ ) in the dry etching process of the laminate including the electrode film / perovskite layer / electrode film. Is disclosed.

JP 2006-278748 A JP 2003-059902 A JP 2006-019729 A

  The cleaning treatment in an atmosphere of a rare gas such as argon gas has an advantage that a high cleaning effect by a physical cleaning action (etching) can be obtained. However, the cleaning treatment in a rare gas atmosphere is not suitable for a substrate made of an insulating resin material such as polyimide. This is because the insulation of the substrate surface may be lost due to the collision of high energy ions. On the other hand, the cleaning process under an atmosphere such as oxygen gas is a chemical cleaning that reacts with the organic substance of the substrate and has the advantage of not impairing the insulating property of the substrate surface, but the demerit that the cleaning effect is low There is.

  This invention is made | formed in view of the said situation, Comprising: It aims at providing the technique which can acquire a high cleaning effect, without impairing the insulation of an insulating resin substrate.

A second aspect of the present invention is a method for cleaning an insulating resin substrate, including a cleaning step of cleaning the surface of the insulating resin substrate in an atmosphere containing at least one of a first gas and a second gas, The first gas is a gas that generates a physical cleaning action, and the second gas generates a chemical cleaning action and restores the insulating properties of the insulating resin substrate. a gas having the higher cleaning Engineering, said second atmosphere have a high ratio of the first gas than the gas, while maintaining the ratio of the first gas and the second gas, wherein the first step of the surface of the insulating resin substrate is scanned with the ion beam, after the first step, under an atmosphere ratio is not high in the second gas than said first gas, said first The insulating resin substrate while maintaining the ratio of the second gas and the second gas Provides a cleaning method of the insulating resin substrate, characterized in that it comprises a second step of scanning the ion beam the surface.

According to this method, in the first step, a high cleaning effect by a physical cleaning action can be obtained. At this time, the insulating property of the surface of the insulating resin substrate may be lost, but in the second step, the insulating property of the substrate surface can be recovered by the chemical action of the second gas. Therefore, a high cleaning effect can be obtained without impairing the insulating properties of the insulating resin substrate.

According to a fourth aspect of the present invention, there is provided a substrate processing apparatus for cleaning an insulating resin substrate, a chamber in which the insulating resin substrate is disposed, and a first gas for introducing a first gas into the chamber. Gas introduction means, second gas introduction means for introducing a second gas into the chamber, and cleaning the surface of the insulating resin substrate by irradiating the surface of the insulating resin substrate with an ion beam Cleaning means, and control means, wherein the first gas is a gas that generates a physical cleaning action, the second gas generates a chemical cleaning action , and A gas having an action of restoring the insulating properties of the insulating resin substrate , wherein the control means applies the surface of the insulating resin substrate under an atmosphere containing at least one of the first gas and the second gas. when cleaning, from the previous SL second gas Under an atmosphere it has a high ratio of the first gas, while maintaining the ratio of the first gas and the second gas, the first step of the surface of the insulating resin substrate is scanned with the ion beam performed, after the first step, the atmosphere has a high ratio of the second gas than the first gas, while maintaining the ratio of the first gas and the second gas, the insulation There is provided a substrate processing apparatus characterized in that the first and second gas introduction means and the cleaning means are controlled so as to perform a second step of scanning the surface of the functional resin substrate with an ion beam .

According to this configuration, a high cleaning effect due to a physical cleaning action can be obtained in the first step . At this time, the insulating property of the surface of the insulating resin substrate may be lost, but in the second step, the insulating property of the substrate surface can be recovered by the chemical action of the second gas. Therefore, a high cleaning effect can be obtained without impairing the insulating properties of the insulating resin substrate.

  According to the present invention, a high cleaning effect can be obtained without impairing the insulating properties of the insulating resin substrate.

FIG. 1 is a top view schematically showing an internal configuration of an in-line type film forming apparatus. FIG. 2 is a flowchart showing the operation of the film forming apparatus of the first embodiment. FIG. 3 is a schematic diagram showing the configuration of the substrate processing apparatus of the first embodiment. FIG. 4 is a schematic view of the internal configuration of the substrate processing apparatus as viewed in the substrate transport direction. FIG. 5 is a diagram illustrating control of substrate conveyance and beam irradiation in the first embodiment. FIG. 6 is a diagram showing control of the gas flow rate in the first embodiment. FIG. 7 is a diagram illustrating control of substrate conveyance and beam irradiation in the second embodiment. FIG. 8 is a diagram illustrating control of the gas flow rate in the second embodiment. FIG. 9 is a schematic diagram showing the configuration of the substrate processing apparatus of the third embodiment. FIG. 10 is a schematic diagram showing the configuration of the substrate processing apparatus of the fourth embodiment. FIG. 11 is a diagram showing gas flow rate control and voltage application control in the fourth embodiment. FIG. 12 is a schematic diagram showing the configuration of the film forming apparatus and the substrate processing apparatus of the fifth embodiment.

  Hereinafter, preferred embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples are merely illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In the following description, the hardware configuration and software configuration of the apparatus, processing flow, manufacturing conditions, dimensions, materials, shapes, and the like limit the scope of the present invention only to those unless otherwise specified. It is not intended.

<First Embodiment>
(Overall configuration of deposition system)
FIG. 1 is a top view schematically showing the overall internal configuration of the film forming apparatus 1 according to the first embodiment of the present invention. The film formation apparatus 1 includes a stocker chamber 11 in which a substrate 2 to be subjected to film formation is accommodated, a heating chamber 12 that performs heat treatment of the substrate 2, and a process that performs pretreatment and film formation on the surface to be processed of the substrate 2 A chamber 13. The processing chamber 13 includes a preprocessing area 13A and a film forming area 13B, and the preprocessing area 13A includes a substrate process for performing preprocessing such as cleaning of the surface to be processed of the substrate 2 prior to the film forming process. An apparatus 14 is provided, and in the film formation area 13B, a sputtering apparatus 15 is provided as a film formation processing unit for performing a film formation process on the surface to be processed of the substrate 2. The film forming apparatus 1 of the present embodiment has a so-called in-line configuration in which a series of processes such as heating, pretreatment, and film formation are performed while the substrate 2 is being conveyed.

FIG. 2 is a flowchart showing the operation of the film forming apparatus 1. A plurality of substrates 2 are accommodated in the stocker chamber 11. Among them, the substrate 2 to be processed is transferred from the stocker chamber 11 to the heating chamber 12 (step S101) and heated by the heater 121 (step S102). In the present embodiment, the substrate 2 is heated from about 100 ° C. to about 180 ° C. by an approximately sufficient heat treatment. Thereafter, the substrate 2 is transferred from the heating chamber 12 to the pretreatment area 13A of the treatment chamber 13 (step S103). In the pretreatment area 13A, the substrate processing apparatus 14 performs a cleaning process on the surface to be processed of the substrate 2 (step S104). Next, the substrate 2 is transported to the film forming area 13B (step S105), and the sputtering process is performed on the surface to be processed of the substrate 2 by the sputtering apparatus 15 (step S106). The targets 151 and 152 used in the sputtering process may be the same material or different materials. Above,
The film forming process for the substrate 2 is completed. The substrate 2 after the processing is discharged to the stocker chamber 11.

The film forming apparatus 1 according to the present embodiment can be applied to various electrode formations that involve pretreatment, for example. As a specific example, for example, FC-BGA (Flip-Chip Ball Grid)
Array) A plating seed film for a mounting substrate and a metal laminated film for a SAW (Surface Acoustic Wave) device may be mentioned. In addition, a conductive hard film in the bonding part of the LED, a film formation of a terminal part film of MLCC (Multi-Layered Ceramic Capacitor), and the like are also included. In addition, the present invention can be applied to the formation of an electromagnetic shielding film in an electronic component package and a terminal film of a chip resistor. Examples of the size of the substrate 2 include a range of about 50 mm × 50 mm to 600 mm × 600 mm. As the substrate 2, an insulating resin substrate made of polyimide resin is used. Alternatively, a substrate made of a polyimide resin coating may be used for a substrate made of a different material.

(Substrate processing equipment)
3 and 4 are schematic views showing the configuration of the substrate processing apparatus 14 according to the present embodiment. FIG. 3 is a schematic view of the internal configuration of the substrate processing apparatus 14 as viewed from above. FIG. 4 is a schematic view of the internal configuration of the substrate processing apparatus 14 as viewed in the transport direction of the substrate 2.

  The substrate processing apparatus 14 of this embodiment is an apparatus for performing a cleaning process on the surface (surface to be processed) of an insulating resin substrate, and roughly includes a chamber 41, a substrate support part 42, and a first gas introduction part 43. , A second gas introduction unit 44, a control unit 45, and a beam irradiation unit 46.

  The chamber 41 is an airtight container that constitutes the processing chamber 13. The inside of the chamber 41 is maintained in a reduced pressure state by an unillustrated exhaust pump. The substrate support unit 42 is a substrate transport unit that can move on a rail 410 laid on the bottom surface of the chamber 41 while supporting the substrate 2 in a vertical state. The first gas introduction unit 43 is an apparatus for introducing the first gas into the chamber 41, and includes a gas introduction pipe 430 that connects between a first gas supply source (not shown) and the chamber 41, A flow rate control device 431 such as an MFC (mass flow controller), an open / close valve 432, and the like are included. The second gas introduction unit 44 is a device for introducing the second gas into the chamber 41, and a gas introduction pipe that connects between the second gas supply source (not shown) and the chamber 41. 440, a flow control device 441, an opening / closing valve 442, and the like. The beam irradiation unit 46 is a cleaning unit that cleans the surface of the substrate 2 by irradiating the surface of the substrate 2 with a high-energy ion beam. The control unit 45 is a device for controlling the operation of each unit of the substrate processing apparatus 14. Specifically, the control unit 45 controls the movement of the substrate support unit 42, the flow rate of the first gas introduction unit 43 and the second gas introduction unit 44, the control of the ion beam irradiated from the beam irradiation unit 46, and the like. Do.

The substrate processing apparatus 14 of the present embodiment performs the first cleaning that cleans the surface of the substrate 2 in the atmosphere of the first gas, and then cleans the surface of the substrate 2 in the atmosphere of the second gas. 2 is characterized in that it is cleaned. Here, the first gas is a gas that generates a physical cleaning action, that is, a physical cleaning action on the surface of the substrate 2 when the substrate 2 is irradiated with an ion beam in an atmosphere of the first gas. Is used (or a physical cleaning action is dominant). For example, a rare gas such as argon (Ar) or neon (Ne) can be preferably used. In this embodiment, argon gas is used from the advantage that a good etching action can be obtained. On the other hand, the second gas has a chemical cleaning action on the surface of the substrate 2 when the substrate 2 is irradiated with an ion beam in an atmosphere of a chemical cleaning action, that is, the atmosphere of the second gas. Working gas (or chemical cleaning action becomes dominant) is used. For example, oxygen (O ₂ ), nitrogen (N ₂ ), or the like can be preferably used. However, when nitrogen gas is used, a detoxification facility for removing the cyanide produced is required. In this embodiment, oxygen gas that does not require a detoxification facility is used.

(Control of cleaning process)
With reference to FIGS. 5 and 6, the control of the cleaning process of the present embodiment will be described. FIG. 5 shows the transfer of the substrate 2 and the beam irradiation control, and FIG. 6 shows the control of the flow rate of the gas introduced into the chamber. 5, t1, t2,... Represent time.

  First, the control unit 45 moves the substrate 2 to a start position (home position), and sends a flow rate instruction signal to the flow rate control device 431 of the first gas introduction unit 43 and the flow rate control device 441 of the second gas introduction unit 44, respectively. And the flow rate ratio of the first gas flow rate F1 and the second gas flow rate F2 is set to F1: F2 = 100%: 0% (t1). Then, the control unit 45 scans the surface of the substrate 2 with the ion beam irradiated from the beam irradiation unit 46 while moving the substrate 2 in the right direction in the drawing at a constant speed in the atmosphere of the first gas ( t2). When the substrate 2 reaches the end position (that is, when the scanning of the surface of the substrate 2 is completed), the control unit 45 stops the beam irradiation and the movement of the substrate 2 (t3). Also, the introduction of the first gas is stopped. The process from t1 to t3 so far is the first cleaning step.

  Thereafter, the control unit 45 returns the substrate 2 to the start position and controls the flow rate control devices 431 and 441 so that the flow rate ratio of the first gas and the second gas is F1: F2 = 0%: 100%. Set (t4). Then, the controller 45 scans the surface of the substrate 2 with the ion beam while moving the substrate 2 in the right direction in the drawing at a constant speed in the atmosphere of the second gas (t5). When the substrate 2 reaches the end position, the controller 45 stops the beam irradiation (t6). This process from t4 to t6 is the second cleaning step.

  According to the cleaning treatment as described above, by performing the first cleaning step first, it is possible to obtain a high cleaning effect by a physical cleaning action (etching action) under the atmosphere of the first gas. Here, the insulating property of the resin substrate surface may be lost by the first cleaning step, but by performing the second cleaning step after the first cleaning step, the chemical action of the substrate surface Insulation can be restored. Therefore, a high cleaning effect can be obtained without impairing the insulating properties of the resin substrate. Moreover, it can be realized by a simple control of performing the beam scanning twice by changing the kind of the atmospheric gas. In this embodiment, beam scanning is performed once each in the first cleaning process and the second cleaning process. However, a plurality of beam scans may be performed in each cleaning process. Regarding the beam scanning direction, this embodiment discloses only the scanning direction in which the substrate is moved from the start position. However, after the first cleaning process is completed, the second cleaning process returns to the start position. The substrate may be moved to scan the beam. In addition to the configuration of moving the substrate, the beam may be scanned by fixing the substrate and moving the beam irradiation unit 46 or changing the beam irradiation direction. In addition, the entire substrate may be cleaned, but it is also possible to clean only a part of the substrate surface by irradiating the beam only in a necessary range.

<Second Embodiment>
Next, a second embodiment of the present invention will be described. In the substrate processing apparatus 14 of the present embodiment, the ratio of the first gas is higher than the second gas at the start of the cleaning process, and the ratio of the second gas is higher than the first gas at the end of the cleaning process. It is characterized in that the ratio of the first gas to the second gas in the atmospheric gas is changed so as to increase. Since the other configuration may be the same as that of the first embodiment, description thereof is omitted.

(Control of cleaning process)
With reference to FIGS. 7 and 8, the control of the cleaning process of the present embodiment will be described. FIG. 7 shows the control of the conveyance of the substrate 2 and the beam irradiation, and FIG. 8 shows the control of the flow rate of the gas introduced into the chamber. In FIG. 7 and FIG. 8, t1, t2,... Represent time.

  First, the control unit 45 moves the substrate 2 to the start position (home position) and sets the flow rate ratio of the first gas and the second gas to F1: F2 = 100%: 0% (t1). Then, the control unit 45 scans the surface of the substrate 2 with the ion beam irradiated from the beam irradiation unit 46 while moving the substrate 2 in the right direction in the drawing at a constant speed (t2). Next, the control unit 45 changes the flow rate ratio of the first gas and the second gas to F1: F2 = 66.7%: 33.3% (t3), and then moves the substrate 2 to the left in the figure. The second beam scan is performed while moving at a constant speed (t4). Thereafter, a third beam scan is performed in an atmosphere with a flow rate ratio F1: F2 = 33.3%: 66.7% (t5 to t6), and 4 in an atmosphere with a flow rate ratio F1: F2 = 0%: 100%. A second beam scan is performed (t7 to t8). In this embodiment, as shown in FIG. 8, the flow rate ratio is kept constant during the period in which the surface of the substrate 2 is irradiated with a beam (during beam scanning). This is because unevenness is not generated in the result of the surface treatment.

  According to the control described above, at the start of the cleaning process, the cleaning process is performed in an atmosphere in which the first gas is dominant, and a high cleaning effect by a physical cleaning function (etching function) can be obtained. . At this time, the insulating property of the resin substrate surface may be lost, but at the end of the cleaning process, the processing is performed in an atmosphere in which the second gas is dominant. Can be recovered. Therefore, a high cleaning effect can be obtained without impairing the insulating properties of the resin substrate. Moreover, it can be realized by simple control of performing beam scanning while changing the flow rate ratio of the atmospheric gas.

  In the present embodiment, as shown in FIG. 8, the flow rate F2 of the second gas at the start of the cleaning process is set to 0, and the flow rate F1 of the first gas at the end is set to 0. However, such control is an example. For example, the flow rate of the second gas may be set to F2> 0 at the start of the cleaning process, or the flow rate of the first gas may be set to F1> 0 at the end of the cleaning process. . Also, the flow rate of each gas may be changed non-linearly or stepwise. That is, if the flow rate at the start of the cleaning process is F1> F2 and the flow rate at the end is F1 <F2 (in other words, the cleaning action of the first gas becomes dominant at the start of the cleaning process, and the cleaning process As long as the cleaning action of the second gas becomes dominant at the end of the process, the flow rate of each gas may be controlled in any way.

<Third Embodiment>
FIG. 9 shows the configuration of the substrate processing apparatus 14 according to the third embodiment. The substrate processing apparatus 14 of the present embodiment is provided with beam irradiation units 46A and 46B on both sides of the substrate 2. According to this configuration, both surfaces of the substrate 2 can be simultaneously cleaned by one scanning. Alternatively, the two substrates 2 can be simultaneously cleaned by supporting the two substrates 2 in parallel on the substrate support portion. Therefore, it is possible to provide a substrate processing apparatus having higher productivity than the first and second embodiments. The specific control of the cleaning process may be the same as that of the first and second embodiments.

<Fourth embodiment>
FIG. 10 shows the configuration of the substrate processing apparatus 14 according to the fourth embodiment. The first to third embodiments are configured to perform a cleaning process using an ion beam, whereas the present embodiment is configured to perform a plasma cleaning process using a reverse sputtering method.

The substrate processing apparatus 14 of this embodiment generally includes a chamber 41, a substrate support unit 42, a first gas introduction unit 43, a second gas introduction unit 44, a control unit 45, a voltage application member 47, and a high frequency power supply 48. Have The difference from the above-described embodiment is that the voltage applying member 47 is used instead of the beam irradiation unit.
And a high-frequency power supply 48 is provided. Since the other configuration may be basically the same as that of the above-described embodiment, the description is omitted.

(Control of cleaning process)
With reference to FIG. 11, the control of the cleaning process of the present embodiment will be described. FIG. 11 shows the control of the flow rate of the gas introduced into the chamber and the control of the voltage application member 47.

  First, the control unit 45 moves the substrate 2 to a predetermined processing position in the substrate processing apparatus 14 (t1). At this time, the voltage applying member 47 and the electrode 421 of the substrate support portion 42 are in close contact with each other, and electrical connection between them is achieved. Subsequently, the control unit 45 sends a flow rate instruction signal to the flow rate control device 431 of the first gas introduction unit 43 and the flow rate control device 441 of the second gas introduction unit 44, respectively, so that the first gas flow rate F1 and the first gas flow rate F1 are changed. The flow rate ratio of the flow rate F2 of gas No. 2 is set to F1: F2 = 100%: 0% (t2). And the control part 45 controls the voltage application member 47, and applies a predetermined | prescribed high frequency voltage with respect to the board | substrate support part 42 via the electrode 421 (t3). By applying this voltage, plasma P of the first gas is formed in the vicinity of the surface of the substrate 2 (see FIG. 10). The surface of the substrate 2 is cleaned by collision of ions in the plasma P.

  Thereafter, the controller 45 gradually changes the flow rate ratio of the first gas and the second gas while maintaining the voltage application, and finally sets F1: F2 = 0%: 100% (t4). ). Therefore, finally, a chemical cleaning process using the plasma P of the second gas is performed.

  According to the control described above, at the start of the cleaning process, the cleaning process is performed in an atmosphere in which the first gas is dominant, and a high cleaning effect by a physical cleaning function (etching function) can be obtained. . At this time, the insulating property of the resin substrate surface may be lost, but at the end of the cleaning process, the processing is performed in an atmosphere in which the second gas is dominant. Can be recovered. Therefore, a high cleaning effect can be obtained without impairing the insulating properties of the resin substrate. Moreover, it can be realized by a simple control of changing the flow rate ratio of the atmospheric gas while the voltage is applied.

  In the present embodiment, the flow rate F2 of the second gas at the start of the cleaning process is set to 0, the flow rate F1 of the first gas at the end of the cleaning process is set to 0, and the flow rates of the respective gases are changed linearly. However, such control is an example. For example, the flow rate of the second gas may be set to F2> 0 at the start of the cleaning process, or the flow rate of the first gas may be set to F1> 0 at the end of the cleaning process. . Also, the flow rate of each gas may be changed non-linearly or stepwise. Further, as in the first embodiment, the first half of the cleaning process may be switched to two stages such as F1: F2 = 100%: 0%, and the second half such that F1: F2 = 0%: 100%. That is, if the flow rate at the start of the cleaning process is F1> F2 and the flow rate at the end is F1 <F2 (in other words, the cleaning action of the first gas becomes dominant at the start of the cleaning process, and the cleaning process As long as the cleaning action of the second gas becomes dominant at the end of the process, the flow rate of each gas may be controlled in any way.

<Fifth Embodiment>
FIG. 12 is a top view schematically showing the overall internal configuration of the film forming apparatus and the substrate processing apparatus according to the fifth embodiment. The film forming apparatus 1 generally includes a chamber 41, a substrate support unit 42 that supports a plurality of substrates 2, a first gas introduction unit 43, a second gas introduction unit 44, a control unit 45, a beam irradiation unit 46, and A plurality of targets 151 and 152 are provided. In addition, the same code | symbol is attached | subjected about the component which is the same thru | or corresponding to the above-mentioned embodiment for assisting understanding.

  The substrate support portion 42 of the present embodiment is a disk-like table that can rotate clockwise, and has a structure that can support 12 substrates 2 on the upper surface thereof in a vertical state (upright state). Each substrate 2 is disposed with the surface to be processed facing outward. The film forming apparatus 1 of the present embodiment has a so-called carousel type configuration in which a series of processes such as heating, pretreatment, and film formation are performed while rotating the substrate support portion 42. For example, the film forming apparatus 1 is suitable for processing a relatively small substrate 2 having a side of about 100 mm.

(Control of cleaning process)
First, the control unit 45 rotates the substrate support unit 42 clockwise at a constant rotation speed (for example, 20 rpm). When the rotation is stabilized, the control unit 45 emits an ion beam from the beam irradiation unit 46 and sequentially scans the surface of each substrate 2. By performing this beam irradiation for about 3 minutes (that is, each substrate 2 is scanned about 60 times), the surface of the substrate 2 is cleaned.

  Also in this embodiment, whether the first half of the cleaning process is performed in the atmosphere of the first gas and the latter half of the cleaning process is performed in the atmosphere of the second gas, as in the first embodiment (FIG. 6). As in the second embodiment (FIG. 8), the flow rate ratio between the first gas and the second gas may be changed during the cleaning process. Thereby, there can exist an effect similar to the above-mentioned embodiment.

<Others>
Although the preferred specific examples of the present invention have been described by exemplifying the first to fifth embodiments, the scope of the present invention is not limited to these specific examples, and may be appropriately modified within the scope of the technical idea. Can do. For example, the configurations and control contents described in the first to fifth embodiments may be combined with each other as long as there is no technical contradiction. The first gas, the second gas, the material of the substrate, and the like may be other than those exemplified in the first to fifth embodiments. In the above embodiment, the inline type and carousel type apparatus configurations are exemplified, but the configurations of the substrate processing apparatus and the film forming apparatus are not limited to these, and any configuration may be used.

1: deposition apparatus, 2: substrate, 11: stocker chamber, 12: heating chamber, 13: processing chamber, 13A: pretreatment area, 13B: deposition area, 14: substrate processing apparatus, 15: sputtering apparatus, 41: Chamber: 42: Substrate support part, 43: First gas introduction part, 44: Second gas introduction part, 45: Control part, 46, 46A, 46B: Beam irradiation part, 47: Voltage application member, 48: High frequency Power supply, 121: heater, 151, 152: target, 410: rail, 421: electrode, 430: first gas introduction pipe, 431: flow control device, 432: open / close valve, 440: second gas introduction pipe, 441 : Flow control device, 442: Open / close valve

Claims (15)

A method of cleaning an insulating resin substrate,
A cleaning step of cleaning the surface of the insulating resin substrate in an atmosphere containing at least one of the first gas and the second gas;
The first gas is a gas that generates a physical cleaning action;
The second gas is a gas that has a function of generating a chemical cleaning action and restoring the insulating properties of the insulating resin substrate ,
The higher the cleaning do this,
It said second atmosphere have a high ratio of the first gas than the gas, wherein maintaining the first gas ratio of the second gas, the ion beam the surface of the insulating resin substrate A first step of scanning with,
After the first step, the first atmosphere has a high ratio of the second gas than the gas, while maintaining the ratio of the first gas and the second gas, the insulating resin A second step of scanning the surface of the substrate with an ion beam, and a method for cleaning an insulating resin substrate. Toward the end from the start of the cleaning step, the ratio of the first gas stepped down, the insulating resin according to claim 1, characterized in that increasing the proportion of the second gas stepwise Substrate cleaning method. The ratio of the second gas at the start of the cleaning process is 0, an insulating resin substrate according to claim 1 or 2, characterized in that the ratio of the first gas at the end is 0 Cleaning method. Wherein the first gas, the method of cleaning the insulating resin substrate according to any one of claims 1 to 3, characterized in that a noble gas. The method for cleaning an insulating resin substrate according to claim 4 , wherein the first gas is an argon gas. The second gas, the insulating resin substrate cleaning method according to any one of claims 1 to 5, characterized in that oxygen gas. The insulating resin substrate is a polyimide insulating resin substrate.
The method for cleaning an insulating resin substrate according to any one of claims 1 to 6. A substrate processing apparatus for cleaning an insulating resin substrate,
A chamber in which an insulating resin substrate is disposed;
First gas introduction means for introducing a first gas into the chamber;
Second gas introduction means for introducing a second gas into the chamber;
Cleaning means for cleaning the surface of the insulating resin substrate by irradiating the surface of the insulating resin substrate with an ion beam ;
Control means, and
The first gas is a gas that generates a physical cleaning action;
The second gas is a gas that has a function of generating a chemical cleaning action and restoring the insulating properties of the insulating resin substrate ,
The control means includes
When cleaning the surface of the insulating resin substrate in an atmosphere containing at least one of the first gas and the second gas ,
Under an atmosphere ratio is not high of the first gas than before Symbol second gas, while maintaining the ratio of the first gas and the second gas, the surface of the insulating resin substrate ion Perform the first step of scanning with the beam,
After the first step, the first atmosphere has a high ratio of the second gas than the gas, while maintaining the ratio of the first gas and the second gas, the insulating resin Performing a second step of scanning the surface of the substrate with an ion beam ;
A substrate processing apparatus for controlling the first and second gas introducing means and the cleaning means . Wherein the control means, toward the end from the start of the cleaning, down to the first ratio stepwise gas, ratio of said second gas is so increased in stages, the first and second 9. The substrate processing apparatus according to claim 8 , wherein the gas introducing means is controlled. The control means controls the first and second gas introduction means so that the ratio of the second gas at the start of the cleaning is 0 and the ratio of the first gas at the end is 0. the substrate processing apparatus according to claim 8 or 9, characterized in that control. Wherein the first gas, the substrate processing apparatus according to any one of claims 8 to 10, characterized in that a noble gas. The substrate processing apparatus according to claim 11 , wherein the first gas is an argon gas. The second gas is a substrate processing apparatus according to any one of claims 8 to 12, characterized in that oxygen gas. The insulating resin substrate is a polyimide insulating resin substrate.
The substrate processing apparatus of any one of Claims 8-13 characterized by the above-mentioned. A substrate processing device according to any one of claims 8-14,
A film forming unit that performs a film forming process on the surface of the insulating resin substrate cleaned by the substrate processing apparatus;
A film forming apparatus comprising:

Images