JP2004207708A - Plasma treatment apparatus and plasma treatment method, and manufacturing method for thin film transistor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus and a plasma treatment method to precisely control a distance between a plasma and a treated subject and to easily carry a substrate whose thickness is thin and whose dimension is large-sized. <P>SOLUTION: The plasma treatment apparatus has a gas supplying means to introduce a process gas between a first electrode and a second electrode (between a pair of electrodes) under an atmospheric pressure or under a pressure close to the atmospheric pressure, a plasma generating means to generate the plasma by applying a high-frequency voltage to the first electrode or the second electrode in a state that the process gas is introduced, and a carrier means to carry the subject to be treated floating it by blowing the process gas or a carrier gas against the subject to be treated. Film forming (forming) of a thin film by etching-processing, ashing-processing, and a plasma CVD-processing the subject to be treated or a surface of the subject to be treated is achieved by moving a relative position of the first and second electrodes and the subject to be treated. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

  The present invention relates to a plasma processing apparatus and a plasma processing method for efficiently performing plasma processing such as thin film formation, etching, and ashing.

  The invention also relates to a method for manufacturing a thin film transistor.

  Techniques for forming a pixel and a driver circuit using a semiconductor element formed of a polycrystalline semiconductor over an insulator are actively being developed because they greatly contribute to miniaturization and low power consumption. In many cases, a plasma device is used for forming a semiconductor element. However, this plasma device operates at substantially atmospheric pressure, and does not require a load lock by isolating a process space or the like by a gas flow. (For example, see Patent Document 1).

JP 2001-93871 A

  Precise control of the distance between the generated plasma and the object has been difficult. In recent years, the thickness of a substrate, which is a main object to be processed, has been reduced to 1 to 10 mm and its width and length have been increased to 1 m or more with the reduction in weight and the efficiency of the manufacturing process. Therefore, the transfer of the substrate is difficult, and the substrate is warped or damaged during the transfer.

  Therefore, the present invention provides a plasma processing apparatus and a plasma processing method that enable precise control of the distance between plasma and an object to be processed, and facilitate transfer of a thin and large substrate.

  In order to solve the above-mentioned problems, the present invention takes the following measures.

  In the plasma processing apparatus of the present invention, a gas supply unit for introducing a process gas between the first and second electrodes (between a pair of electrodes) under an atmospheric pressure or a pressure near the atmospheric pressure, and the process gas is introduced. A plasma generating means for generating a plasma by applying a high-frequency voltage to the first or second electrode in a state in which the processing gas or the carrier gas is blown onto the workpiece, And a transport means for floating and transporting. The plasma generated between the first and second electrodes, that is, the relative position between the first and second electrodes and the object to be processed is moved, and the object to be processed or the The thin film is formed (formed) on the surface of the object by etching, ashing, or plasma CVD. Alternatively, a cleaning process for a component is performed using the plasma generated between the first and second electrodes, that is, the first and second electrodes. Further, in the plasma supply means, the first electrode has a cylindrical shape surrounding the second electrode and having a nozzle-like gas supply port at a tip thereof.

  Note that the formation of a thin film by a plasma CVD method uses a chemical reaction using a gas on the surface of an object to be processed.

  In the above-described plasma processing apparatus, by appropriately changing a gas to be used, any one of film formation by plasma CVD, etching, ashing, and component cleaning can be performed.

  In the present invention, a process gas is introduced between the first and second electrodes (between a pair of electrodes) under an atmospheric pressure or a pressure near the atmospheric pressure, and the first or the second gas is introduced in a state where the process gas is introduced. A high-frequency voltage is applied to the second electrode to generate plasma, and the process gas or the carrier gas is sprayed on the object to float and convey the object. Further, the plasma and the object to be processed are moved relative to each other, and an etching process, an ashing process, a thin film formation (formation) by a plasma CVD method, or the plasma is applied to the object or the surface of the object to be processed. The cleaning process of the component is performed using the cleaning process.

 Forming a gate electrode on a substrate having an insulating surface; forming a gate insulating film on the substrate; forming an amorphous semiconductor on the gate insulating film; Forming a crystalline semiconductor by crystallizing the same, and forming an insulating film on the crystalline semiconductor, wherein the method comprises the steps of: With the process gas introduced, a high-frequency voltage is applied to the first or second electrode, and the relative positions of the first and second electrodes and the substrate are moved to form the gate electrode. And forming the gate insulating film, the amorphous semiconductor, and the insulating film.

  Forming a gate electrode on a substrate having an insulating surface; forming a gate insulating film on the substrate; forming an amorphous semiconductor on the gate insulating film; A method for manufacturing a thin film transistor having a step of forming an insulating film thereon, wherein the process gas is introduced between the first and second electrodes under atmospheric pressure or a pressure close to atmospheric pressure, and A high-frequency voltage is applied to the first and second electrodes, and the relative positions of the first and second electrodes and the substrate are moved so that the gate electrode, the gate insulating film, the amorphous semiconductor, and the insulating film A method for manufacturing a thin film transistor, which is characterized by performing formation, is provided.

  The present invention provides a plasma processing apparatus that uniformly heats an object to be processed by spraying a heated gas, and floats and moves the object to be processed horizontally and in a non-contact state by the gas to efficiently perform plasma processing. And a plasma processing method. In addition, the entire surface of the object to be processed is moved by airflow control means for injecting gas in a vertical direction and an oblique direction, and the airflow control means simultaneously performs spraying and suction on the object to be processed to reduce the flying height of the object to be processed. The height of the object to be processed is precisely adjusted by adjusting the horizontal accuracy of the object to be processed and the gas flow rate. In the present invention having the above structure, control between the plasma and the object can be easily performed.

  Embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that the form and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention is not construed as being limited to the description of the embodiments below.

  In this embodiment, a plasma processing apparatus of the present invention will be described with reference to FIGS. FIG. 1A is a top view of the plasma processing apparatus according to the present invention, and FIG. 1B is a cross-sectional view. 1A and 1B, an object to be processed 12 such as a glass substrate, a resin substrate, or a semiconductor substrate to be subjected to a surface treatment is set in a cassette chamber 21. Regardless of the large substrate (for example, 300 mm × 360 mm) or the normal substrate (for example, 127 mm × 127 mm), a substrate having a desired size is used as the processing target 12. It is preferable that the substrate set in the cassette chamber 21 is preliminarily subjected to pretreatment such as cleaning.

  Reference numeral 22 denotes a transfer chamber, which transfers the workpiece 12 arranged in the cassette chamber 21 to the plasma processing chamber 23 by a transfer mechanism 20 (for example, a robot arm). In the plasma processing chamber 23 adjacent to the transfer chamber 22, an air flow control unit 18 that creates an air flow so as to block outside air for dust prevention and also transfers the workpiece 12, a heating unit 19, and a plasma generation unit 25 are provided. As the heating unit 19, a known heating unit such as a halogen lamp may be used, and the object to be processed 12 is heated from the lower surface. The airflow control means 18 and the gas outlet 26 control the airflow using a carrier gas such as an inert gas supplied from a gas supply means 29. Since the plasma processing apparatus of the present invention is operated at or near atmospheric pressure, only the airflow control means 18 controls the airflow in the vicinity of the plasma generation means 25, so that contamination from the outside and the backflow of reaction products can be achieved. Can be prevented. That is, the separation from the outside can be performed only by the airflow control means 18, and it is not necessary to completely seal the plasma processing chamber 23. Further, according to the present invention, there is no need for evacuation or opening to the atmosphere required for the decompression device, and there is no need to arrange a complicated vacuum system.

  The gas supplied from the gas supply unit 29 is heated to a desired temperature (for example, 50 ° C. to 800 ° C.) by the heating unit 28, and the heated gas is sprayed on the object 12 to be processed. Heat 12 The heating means 28 is not particularly limited as long as it can heat the gas, and a known means may be used. In the present invention, the heated gas is blown onto the upper surface of the object 12 to be heated, and the heating unit 19 further heats the lower surface of the object 12. In this way, by heating both surfaces of the processing target 12, the processing target 12 is uniformly heated. In addition, an inert gas may be used as the carrier gas supplied from the gas supply unit 29.

  The plasma generating means 25 includes the first electrode 13 and the second electrode 14, and is connected to the high-frequency power supply 17, an exhaust system, a gas supply means, and the like (FIG. 2). In the plasma processing chamber 23, the workpiece 12 on which the predetermined surface treatment has been completed is transported to the transport chamber 24, and is transported from the transport chamber 24 to another processing chamber.

  Note that one or both of the first electrode 13 and the second electrode 14 may be covered with a solid dielectric. Examples of the solid dielectric include metal oxides such as aluminum oxide, zirconium dioxide and titanium dioxide, organic substances such as polyethylene terephthalate and polytetrafluoroethylene, silicon oxide, glass and oxides such as barium titanate. . The solid dielectric may be in the form of a sheet or a film, but preferably has a thickness of 0.05 to 4 mm. This is because a high voltage is required to generate discharge plasma, and if the solid dielectric is too thin, dielectric breakdown occurs when a voltage is applied, and an arc discharge occurs.

  Next, the detailed configuration of the plasma generating means 25 will be described with reference to the cross-sectional view of FIG. Dotted lines in FIG. 2 indicate gas paths. Reference numerals 13 and 14 denote electrodes made of a conductive metal such as aluminum, copper, and stainless steel. The first electrode 13 is connected to a power supply (high-frequency power supply) 17. Note that a cooling system (not shown) for circulating cooling water may be connected to the first electrode 13. By providing the cooling system, it is possible to prevent the heating when the surface treatment is continuously performed by circulating the cooling water and to improve the efficiency by the continuous treatment. The second electrode 14 has a shape surrounding the first electrode 13 and is electrically grounded. Each of the first electrode 13 and the second electrode 14 has a cylindrical shape having a nozzle-like gas supply port at its tip. The gas heated by the heating means 28 is supplied to the space between the first electrode 13 and the second electrode 14. Then, the atmosphere in this space is replaced, and a high-frequency voltage (for example, 10 to 500 MHz) is applied to the first electrode 13 by the high-frequency power supply 17 in this state, and the plasma 11 is generated in the space. By irradiating a reactive gas flow containing chemically active excited species such as ions and radicals generated by the plasma 11 toward the surface of the processing target 12, a thin film on the surface of the processing target 12 is formed. Perform surface treatment such as formation and cleaning.

  2, 27 is a valve, 28 is a heating means, 29 to 31 are gas supply means, 32 is exhaust gas, and 33 is a filter. The heating unit 28 heats the gas supplied from the gas supply units 29 to 31 until a desired temperature (for example, 50 to 800 degrees) is reached. Reference numeral 29 denotes a gas supply unit for a carrier gas, 30 denotes a gas supply unit for a purified gas, and 31 denotes a gas supply unit for a process gas. As a carrier gas, a gas such as an inert gas which does not affect surface treatment performed in a treatment chamber is used. Further, the process gas is appropriately set in accordance with the type of surface treatment performed in the processing chamber. The exhaust gas 32 is introduced into the filter 28 via the valve 27. The filter 28 removes dust mixed in the exhaust gas. Then, the gas purified by the filter 33 is introduced again into the gas supply means 30 for the purified gas, and is used again as a process gas.

  Further, as described above, the processing target 12 floats horizontally by the gas blown in the oblique direction and the vertical direction from the airflow control unit 18 and the gas from the space between the two electrodes, and moves in the non-contact state in the traveling direction. Conveyed. In the vicinity of the electrode, gas is blown upward, and the processing object 12 floats by this gas. In the vicinity of the airflow control means 18, gas blowing and gas suction are performed simultaneously to control the height at which the workpiece 12 floats. Further, using the valve 27, the horizontal accuracy of the processing target 12 is adjusted by the flow rate of the gas, and the distance between the processing target 12 and the first and second electrodes 13 and 14 is precisely adjusted. This configuration prevents the large, thin workpiece 12 that is difficult to transport from being distorted, warped, or, in the worst case, broken.

  In addition, unlike the above-described FIGS. 1 and 2, a plurality of surface treatments may be continuously performed on the workpiece 12 by arranging a plurality of plasma generating units in the traveling direction in order. For example, as shown in FIG. 3, a plurality of plasma generating means 25A to 25C are sequentially arranged, and a plurality of surface treatments are continuously performed by transporting the workpiece 12 in a traveling direction. This is because the plasma processing apparatus of the present invention operates under the atmospheric pressure or a pressure close to the atmospheric pressure. Therefore, it is not necessary to separately provide the processing chambers for performing each surface treatment, and only to provide the airflow control means 18. Therefore, contamination from the outside can be prevented. Further, in the present invention, the plasma generation unit 25 is fixed, and the airflow control unit 18 for controlling the gas is used as the transfer unit for the workpiece 12. Therefore, when performing a plurality of surface treatments successively, the plasma generation means may be arranged in the same processing chamber in the traveling direction in order, and the workpiece 12 may be transported using the airflow control means 18.

  In FIGS. 1 to 3 described above, the processing target 12 is transported by using the airflow control unit 18. However, as shown in FIGS. 6A and 6B, the workpiece 12 may be transported using the airflow control means 18 and a mechanical transport mechanism (robot arm) 51. Then, the workpiece 12 can be transported horizontally in the traveling direction. In addition, as shown in FIG. 6C, a rail 53 is installed in the traveling direction of the workpiece 12 instead of the robot arm 51, and a workpiece 52 provided on a carriage 52 running on the rail 53 is provided. The workpiece 12 may be transported horizontally using a fixing device.

  The present invention provides a plasma processing apparatus that uniformly heats an object to be processed by spraying a heated gas, and floats and moves the object to be processed horizontally and in a non-contact state by the gas to efficiently perform plasma processing. And a plasma processing method. In addition, the entire surface of the object to be processed (particularly suitable for a large substrate) is moved by air flow control means for injecting gas in a vertical direction and an oblique direction, and the air flow control means simultaneously performs spraying and gas suction on the object to be processed. The height of the object to be processed is adjusted precisely by adjusting the floating height of the object to be processed and the horizontal accuracy of the object to be processed by the gas flow rate. In the present invention having the above structure, control between the plasma and the object can be easily performed. Further, according to the present invention, plasma processing can be easily performed by being conveyed along the shape of the surface of the object without being limited by the size of the object.

  Further, according to the present invention having the above structure, the film forming speed, the etching speed, and the ashing speed are improved. Further, by sequentially arranging the plasma generating means in the same processing chamber, a plurality of surface treatments can be continuously performed, so that the manufacturing apparatus is simplified.

  Example 1 In this example, a plasma processing method of the present invention will be described. Hereinafter, a case where a thin film is formed on a surface of a processing object by using a chemical vapor deposition method, a case where an etching process, an ashing process, and a cleaning process are performed will be described.

When a thin film is formed on the object 12 or on the surface of the object 12 by chemical vapor deposition (CVD) using the plasma processing method of the present invention, FIGS. Si _x H _y from the gas supply means 31 of the process gas in the 6, and supplies the raw material gas such as SiH _x Cl _y, hydrogen, oxygen, a mixed gas of one and a rare gas of nitrogen to the plasma generation means 25 This is performed by generating plasma. For example, a silicon film is formed using a mixed gas of SiCl ₄ (silicon tetrachloride gas), hydrogen gas, and a rare gas.

In the case where the object 12 or the surface of the object 12 is subjected to an etching treatment, the gas supply means 31 supplies raw material gas such as NF ₃ , fluorocarbon (CF ₄ ), SF ₆ , CO _x , hydrogen and oxygen. This is performed by supplying a mixed gas of one of them and a rare gas to the plasma generating means 25 to generate plasma. For example, an etching process is performed by generating fluorine atoms using a source gas such as NF ₃ or SF ₆ and reacting with solid silicon to vaporize as volatile SiF ₄ gas and exhausting the gas to the outside.

When performing the ashing process on the object 12 or the surface of the object 12, the gas supply unit 31 supplies oxygen source gas and hydrogen, fluorocarbon (CF ₄ ), NF ₃ , H ₂ O, and CHF ₃ . One of them is supplied to the plasma generation means 25 to generate plasma. For example, in the ashing process of the photosensitive organic resist, the ashing process is performed by introducing CO ₂ , CO, and H ₂ O by introducing oxygen and fluorocarbon, and stripping the resist.

Further, a cleaning process for components constituting the plasma processing apparatus of the present invention may be performed, and particularly, a cleaning process for the electrodes 13 and 14 may be performed. At this time, cleaning is performed by plasma using a gas such as NF ₃ , fluorocarbon, SF ₆ , CO _x , and particularly in the case of an organic substance, O ₂ .

  This embodiment can be freely combined with Embodiment Mode.

  In this embodiment, a case where a thin film transistor (a so-called bottom gate type) is manufactured by continuously performing surface treatment of an object to be processed (mainly a substrate) using the plasma processing apparatus of the present invention is described. Here, a manufacturing process for manufacturing an N-channel TFT and a P-channel TFT over the same substrate will be described with reference to FIGS.

  As the substrate 200, a substrate having an insulating surface such as a glass substrate is used (FIG. 4A). On the substrate 200, a predetermined pattern is formed on a metal such as W-Si (tungsten silicon), Ag (silver), or TaN (tantalum nitride) to form the gate electrodes 209 and 210 to a thickness of 50 to 500 nm. Form. In this embodiment, as the gate electrodes 209 and 210, W-Si (tungsten silicon) is formed to a thickness of 200 nm by a sputtering method using a W (tungsten) target. FIG. 4F shows a top view at this time.

Subsequently, a gate insulating film 211 is formed over the gate electrodes 209 and 210 (FIG. 4B). The gate insulating film 211 is formed using a plasma treatment apparatus of the present invention with a thickness of 30 to 200 nm by a plasma CVD method using a silicon-containing insulating film. The gate insulating film 211 has a two-layer structure. As a first layer, a silicon oxide film 211a formed using a mixed gas of TEOS (Tetraethyl Orthosilicate) and O ₂ is formed to a thickness of 10 to 200 nm (preferably 50 to 100 nm). As a second layer, a silicon nitride film 211b formed with SiH ₄ and N ₂ as a reaction gas is formed to a thickness of 50 to 200 nm (preferably 100 to 150 nm). In this embodiment, the plasma generating means for forming the silicon oxide film 211a and the plasma generating means for forming the silicon nitride film 211b are sequentially arranged in the traveling direction, and each plasma generating means is supplied from a gas supply means. The first silicon oxide film 211a was continuously formed to a thickness of 50 nm and the second silicon nitride film to a thickness of 100 nm by appropriately changing the gas used. Each plasma generating means was separated by the airflow control means, and the workpiece 12 was levitated and transported in a non-contact state by the airflow control means.

  Note that the gate insulating film 211 is not limited to a two-layer structure and may have a structure of three or more layers, or may be formed using a material other than a silicon oxide film and a silicon nitride film. In consideration of the dielectric constant of the thin film, the TFT is set so as to obtain a desired capacitance.

Next, an amorphous semiconductor film 213 is formed over the gate insulating film 211 (FIG. 4C). The amorphous semiconductor film 213 is formed with a thickness of 25 to 80 nm (preferably 30 to 60 nm) using a SiH ₄ gas by a plasma CVD method using the plasma treatment apparatus of the present invention. In the present embodiment, the plasma generation means for forming the amorphous semiconductor film 213 is disposed in the traveling direction next to the plasma generation means for forming the gate insulation film 211, so that the gate insulation film is formed. Subsequent to 211, an amorphous semiconductor film having a thickness of 50 nm was also formed continuously.

Subsequently, the amorphous semiconductor film 213 is crystallized by a laser crystallization method to form a crystalline semiconductor film 214 (FIG. 4D). Note that when a crystalline semiconductor film is formed by a laser crystallization method, a continuous wave or pulsed gas laser or a solid laser may be used. The former gas laser includes an excimer laser and the like, and the latter solid laser includes a laser using a crystal such as YAG or YVO ₄ doped with Cr, Nd or the like. In order to obtain a crystal having a large grain size in crystallization of the amorphous semiconductor film, it is preferable to use a solid-state laser capable of continuous oscillation and to apply second to fourth harmonics of a fundamental wave. In the case of using the above laser, it is preferable that a laser beam emitted from a laser oscillator be linearly condensed by an optical system and irradiated on a semiconductor film. The crystallization conditions are set as appropriate. When an excimer laser is used, the pulse oscillation frequency is set to 300 Hz, and the laser energy density is set to 100 to 700 mJ / cm ² (preferably 200 to 300 mJ / cm ² ).

In this embodiment, a YAG laser is used, a pulse oscillation frequency is set to 1 to 300 Hz using the second harmonic, and a laser energy density is set to 300 to 1000 mJ / cm ² (preferably 350 to 500 mJ / cm ² ). A semiconductor film 214 was formed. At this time, a laser beam condensed linearly with a width of 100 to 1000 μm (preferably 400 μm) is irradiated over the entire surface of the substrate, and the superposition rate (overlap rate) of the linear beam at this time is 50 to 98. %. In this embodiment, a laser irradiation apparatus is provided in the same processing chamber where the gate insulating film 211 and the amorphous semiconductor film 213 are formed in accordance with the traveling direction of the substrate 200. Then, subsequent to the formation of the amorphous semiconductor film 213, laser crystallization of the amorphous semiconductor film 213 was continuously performed in the same processing chamber.

Subsequently, an insulating film 215 is formed over the crystalline semiconductor film 214. In this embodiment, a silicon oxide film 211a formed with a mixed gas of TEOS and O ₂ to a thickness of 50 nm is formed by a plasma CVD method. Further, in the same processing chamber, a plasma generating means for forming a silicon oxide film was arranged next to the laser irradiation apparatus which performed the above laser crystallization. As a result, in the same processing chamber, a total of five times of surface treatment including the formation of the gate insulating film (two layers) 211, the formation of the amorphous semiconductor film 213, the laser crystallization, and the formation of the insulating film 215 are continuously performed. Could be done. As described above, in the present invention, a plurality of surface treatments can be continuously performed in the same processing chamber by fixing the plasma generation means and sequentially arranging the same in the transport direction of the workpiece. As a result, external contamination is prevented and the required time is reduced, and productivity is improved.

Next, the crystalline semiconductor film 214 and the insulating film 215 were patterned into desired shapes to form semiconductor layers 216 and 217 (FIGS. 4E and 4G). Subsequently, back exposure was performed using a photolithography method to form a mask 218 made of a resist. Then, a first doping process is performed to add an N-type impurity element to the semiconductor layers 216 and 217 at a low concentration. The first doping treatment may be performed by an ion doping method or an ion implantation method. The conditions of the ion doping method are a dose of 1 × 10 ^{13 to} 5 × 10 ¹⁴ / cm ² and an acceleration voltage of 40 to 80 keV. As the impurity element imparting N-type, an element belonging to Group 15 may be used, and typically, phosphorus (P) or arsenic (As) is used. In this embodiment mode, a dose amount is 5.0 × 10 ¹⁴ / cm ² , an acceleration voltage is 50 keV, and P (phosphorus) is used as an N-type impurity element by ion doping. Was formed. At this time, an impurity element imparting N-type was added to the impurity region in a concentration range of 1 × 10 ¹⁸ to 1 × 10 ²⁰ / cm ² .

Subsequently, after removing the resist mask 218, a new resist mask 219 is formed, and a second doping process is performed at an acceleration voltage higher than that of the first doping process (FIG. 5A). The conditions of the ion doping method are such that the dose is 1 × 10 ^{13 to} 3 × 10 ¹⁵ / cm ² and the acceleration voltage is 60 to 120 keV. In this embodiment mode, as a result of performing the doping process under the conditions of a dose amount of 3.0 × 10 ¹⁵ / cm ² and an acceleration voltage of 65 keV, the impurity region 220 has 1 × 10 ^{19 to} 5 × 10 ²¹ / cm ^2. An impurity element imparting N-type was added in a concentration range of cm ² . Further, a region 240 to which no impurity element was added or a region to which a slight amount of impurity element was added (collectively referred to as a channel formation region) 240 was formed.

Next, after removing the resist mask 219, a new resist mask 221 is formed (FIG. 5B). After that, a third doping process is performed to form an impurity region to which an impurity element imparting a conductivity type opposite to the first conductivity type is added to a semiconductor layer serving as an active layer of the P-channel TFT. In this embodiment, the impurity region 222 is formed in a self-aligning manner by adding a p-type impurity element using the resist mask 221 as a mask for the impurity element. The impurity region 222 was formed by ion doping using diborane (B ₂ H ₆ ) under the conditions of a dose of 1 × 10 ¹⁶ / cm ² and an acceleration voltage of 80 keV. By this doping treatment, doping treatment was performed so that the concentration of the impurity element imparting the P-type becomes 1 × 10 ^{19 to} 5 × 10 ²¹ atoms / cm ² . Further, a channel formation region 241 was formed.

  Note that a desired impurity region may be formed by performing doping processing two or more times by appropriately changing conditions for performing the doping processing.

  Then, a first interlayer insulating film 223 made of an insulating film is formed (FIG. 5C). The first interlayer insulating film 223 is formed of an insulating film containing silicon with a thickness of 100 to 200 nm by a plasma CVD method. In this embodiment, a 100-nm-thick silicon oxynitride film 223 is formed by a plasma CVD method. Next, a second interlayer insulating film 224 is formed over the first interlayer insulating film 223. As the second interlayer insulating film 224, a silicon oxide film formed by a CVD method, a silicon oxide film applied by an SOG (Spin On Glass) method or a spin coating method, an organic insulating film such as acrylic, and a non-photosensitive film A thin film selected from organic insulating films having a thickness of 0.7 to 5 μm (preferably 2 to 4 μm) is formed. In this embodiment, an acrylic film 50 having a thickness of 1.6 μm is formed by the CVD method. Note that the second interlayer insulating film 224 is preferably a film excellent in flatness because the second interlayer insulating film 224 has a strong meaning of alleviating unevenness due to the TFT formed over the substrate 200 and flattening.

  Next, a third interlayer insulating film 225 is formed over the second interlayer insulating film 224. As the third interlayer insulating film 225, a silicon nitride film or a silicon nitride oxide film is formed with a thickness of 0.1 to 0.2 μm by a CVD method. In this embodiment, the silicon nitride film 225 is formed with a thickness of 0.1 μm by the CVD method. By providing the first to third interlayer insulating films 223 to 225, a blocking effect of preventing invasion of various ionic impurities such as oxygen and moisture in the air can be obtained. In the present invention, the first to third interlayer insulating films 223 to 225 were continuously formed by sequentially arranging the plasma supply means in the traveling direction as shown in FIG.

  Then, one or more contact holes are formed by dry etching or wet etching (FIG. 5D). In this embodiment mode, the first to third interlayer insulating films 223 to 225 are etched to form contact holes reaching the impurity regions 220 and 222. Next, wirings 226 to 229 electrically connected to the respective impurity regions are formed. In this embodiment mode, the wirings 226 to 229 are formed by continuously forming a 100-nm-thick Ti film, a 350-nm-thick Al film, and a 100-nm-thick Ti film by a sputtering method, and patterning and etching into a desired shape. And formed. The structure is not limited to the three-layer structure, but may be a structure having two or less layers or a stacked structure having four or more layers. Further, the material of the wiring is not limited to Al and Ti, and other conductive films may be used.

  Through the above steps, a pixel portion including the N-channel TFT 242 and the P-channel TFT 243 can be formed over the same substrate. FIG. 5E shows a top view at this time.

  The N-channel TFT 242 includes a channel formation region 240 overlapping with the gate electrode 209, and an impurity region 220 functioning as a source or drain region. Further, the P-channel TFT 243 includes a channel formation region 241 overlapping with the gate electrode 210 and an impurity region 222 functioning as a source region or a drain region.

  In this embodiment, a plurality of surface treatments of an object to be processed can be continuously performed in the same processing chamber. Therefore, the time required for the manufacturing process is reduced, and the productivity is improved. Further, as compared with the case where the respective surface treatments are performed in different processing chambers, the manufacturing process is simplified, so that the manufacturing yield is improved and the manufacturing cost is reduced.

  In this embodiment, the crystalline semiconductor film is used for manufacturing a TFT, but the present invention is not limited to this. The present invention may be applied to the manufacture of a TFT using an amorphous semiconductor or a microcrystalline semiconductor.

FIG. 1 shows a plasma processing apparatus of the present invention. FIG. 1 shows a plasma processing apparatus of the present invention. FIG. 1 shows a plasma processing apparatus of the present invention. 4A to 4C illustrate a manufacturing process of a thin film transistor. 4A to 4C illustrate a manufacturing process of a thin film transistor. FIG. 1 shows a plasma processing apparatus of the present invention.

Explanation of reference numerals

Reference Signs List 11 plasma, 12 workpiece, 13 first electrode, 14 second electrode, 17 high-frequency power supply, 18 airflow control means, 19 heating means, 20 transport mechanism, 21 cassette chamber, 22 transport chamber, 23 plasma processing chamber, 24 transfer chamber, 25 plasma generation means, 26 gas outlet, 27 valve, 28 heating means, 29 gas supply means for carrier gas, 30 gas supply means for purified gas, 31 gas supply means for process gas, 32 exhaust Gas, 33 filter, 51 transport mechanism, 52 bogie, 53 rail

Claims (15)

Gas supply means for introducing a process gas between the first and second electrodes under atmospheric pressure or near atmospheric pressure;
Plasma generation means for generating a plasma by applying a high-frequency voltage to the first or second electrode while the process gas is introduced,
By blowing the process gas or the carrier gas to the object to be processed, and having a conveyance means to float and convey the object to be processed,
A plasma processing apparatus, wherein a relative position between the first and second electrodes and the object is moved to perform etching, ashing, or thin film formation on the object. Gas supply means for introducing a process gas between the first and second electrodes under atmospheric pressure or near atmospheric pressure;
Plasma generation means for generating a plasma by applying a high-frequency voltage to the first or second electrode while the process gas is introduced,
By blowing the process gas or the carrier gas to the object to be processed, and having a conveyance means to float and convey the object to be processed,
A plasma processing apparatus for performing a cleaning process on a component using the first and second electrodes. Gas supply means for introducing a process gas between the first and second electrodes under atmospheric pressure or near atmospheric pressure;
Plasma generation means for generating a plasma by applying a high-frequency voltage to the first or second electrode while the process gas is introduced,
By blowing the process gas or the carrier gas to the object to be processed, and having a conveyance means to float and convey the object to be processed,
The first and second electrodes and the relative position of the object to be processed are moved to perform an etching process, an ashing process, or a thin film on the object to be processed,
The plasma processing apparatus according to claim 1, wherein the first electrode surrounds the periphery of the second electrode, and has a cylindrical shape having a nozzle-shaped gas supply port at a tip thereof. Gas supply means for introducing a process gas between the first and second electrodes under atmospheric pressure or near atmospheric pressure;
Plasma generation means for generating a plasma by applying a high-frequency voltage to the first or second electrode while the process gas is introduced,
By blowing the process gas or the carrier gas to the object to be processed, and having a conveyance means to float and convey the object to be processed,
Performing a cleaning process on the component using the first and second electrodes;
The plasma processing apparatus according to claim 1, wherein the first electrode surrounds the periphery of the second electrode, and has a cylindrical shape having a nozzle-shaped gas supply port at a tip thereof.   5. The method according to claim 1, wherein the distance between the workpiece and the first and second electrodes is adjusted by simultaneously spraying and suctioning the carrier gas. 6. Characteristic plasma processing apparatus.   5. The plasma processing apparatus according to claim 1, further comprising a heating unit configured to heat the process gas and the carrier gas. 6.   5. The plasma processing apparatus according to claim 1, wherein the first and second electrodes are separated from the outside by the transfer unit. 6.   5. The plasma processing apparatus according to claim 1, wherein the object to be processed is one selected from a glass substrate, a resin substrate, and a semiconductor substrate. In any one of claims 1 to 4, wherein the process gas is, Si _x H _y, a mixed gas of the raw material gas of SiH _x Cl _y, hydrogen, oxygen, and one with a rare gas of nitrogen A plasma processing apparatus, characterized in that: 5. The process gas according to claim 1, wherein the process gas is a mixed gas of a source gas of NF ₃ , fluorocarbon, SF ₆ , CO _x , and one of hydrogen and oxygen and a rare gas. A plasma processing apparatus, comprising: 5. The plasma processing according to claim 1, wherein the process gas is one of oxygen, hydrogen, fluorocarbon, NF ₃ , H ₂ O, and CHF _3. apparatus. Introducing a process gas between the first and second electrodes under atmospheric pressure or near atmospheric pressure;
In a state where the process gas is introduced, a high-frequency voltage is applied to the first or second electrode to generate plasma,
By blowing the process gas or the carrier gas onto the object, the object is levitated and conveyed,
A plasma processing method, wherein a relative position between the first and second electrodes and the object is moved to perform etching, ashing, or thin film formation on the object. Introducing a process gas between the first and second electrodes under atmospheric pressure or near atmospheric pressure;
In a state where the process gas is introduced, a high-frequency voltage is applied to the first or second electrode to generate plasma,
By blowing the process gas or the carrier gas onto the object, the object is levitated and conveyed,
A plasma processing method comprising performing a component cleaning process using the first and second electrodes. Forming a gate electrode on a substrate having an insulating surface,
Forming a gate insulating film on the substrate,
Forming an amorphous semiconductor on the gate insulating film,
Crystallizing the amorphous semiconductor to form a crystalline semiconductor,
In a method for manufacturing a thin film transistor in which an insulating film is formed over the crystalline semiconductor,
With a process gas introduced between the first and second electrodes under atmospheric pressure or near atmospheric pressure, a high-frequency voltage is applied to the first or second electrode, and the first and second electrodes are applied. A method for manufacturing a thin film transistor, wherein a relative position between a second electrode and the substrate is moved to form the gate electrode, the gate insulating film, the amorphous semiconductor, and the insulating film. Forming a gate electrode on a substrate having an insulating surface,
Forming a gate insulating film on the substrate,
Forming an amorphous semiconductor on the gate insulating film,
In the method for manufacturing a thin film transistor in which an insulating film is formed over the amorphous semiconductor,
With a process gas introduced between the first and second electrodes under atmospheric pressure or near atmospheric pressure, a high-frequency voltage is applied to the first or second electrode, and the first and second electrodes are applied. A method for manufacturing a thin film transistor, wherein a relative position between a second electrode and the substrate is moved to form the gate electrode, the gate insulating film, the amorphous semiconductor, and the insulating film.

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