TWI681068B - Substrate processing device and film forming device - Google Patents

Abstract

[Problem] To provide a technology that can perform uniform treatment on the surface to be treated in the entire surface area of the substrate using the reverse sputtering principle. [Solution] A substrate processing device (14) including: a chamber (41) in which a substrate (2) is arranged and a discharge gas is introduced; a substrate holder (42) that holds a substrate in the chamber (41) (2); the substrate holder supporting portion (43), which supports the substrate holder (42) in the chamber (41); and the voltage applying means (44), which makes the substrate holder (42) a cathode, at least The chamber (41) and the substrate holder support (43) are anodes, and a voltage is applied to the substrate (2); wherein, the discharge generated by the voltage application means (44) is applied to the chamber (41) Ions or electrons generated inside are irradiated on the surface of the substrate (2) to perform surface treatment of the substrate (2). The substrate holder (42) and the substrate holder support portion (43) are opposed to the substrate holder (42) It is connected to the floating holder (50) which is electrically insulated from the substrate holder supporting part (43).

Description

Substrate processing device and film forming device

The invention relates to a substrate processing device and a film forming device.

In the film forming process of the semiconductor device, before sputtering, as a pretreatment or etching process for cleaning the surface of the substrate, a substrate surface treatment using the reverse sputtering principle is performed (Patent Document 1). The surface treatment by reverse sputtering is performed by introducing a discharge gas such as Ar gas into the chamber in which the substrate is arranged, while maintaining the chamber at a predetermined vacuum pressure, and applying a predetermined high-frequency voltage to the substrate. The plasma generated due to the discharge generated on the processed surface of the substrate due to the voltage application causes ions in the plasma to collide with the processed surface of the substrate, thereby removing the oxide film and the like formed on the processed surface. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Unexamined Patent Publication No. 2012-132053

[Problems to be solved by the invention]

In the application of the voltage to the substrate in the reverse sputtering process, the substrate mounting portion of the substrate holder is a cathode, and devices other than the substrate holder such as a chamber are configured as anodes. To uniformly process the entire surface of the substrate to be processed, the plasma area needs to be formed to be wider than the surface to be processed. However, depending on the device configuration, in a region where the substrate mounting portion of the substrate holder serving as the cathode is close to the anode, the charging of electrons may be hindered and the diffusion of plasma may be hindered. As a result, the processing distribution of the processed surface of the substrate may be affected.

An object of the present invention is to provide a technique that can perform uniform treatment over the entire surface to be treated in terms of substrate surface treatment using the reverse sputtering principle. [Technical means to solve the problem]

In order to achieve the above object, the substrate processing apparatus of the present invention is a substrate processing apparatus provided with: a 　　 chamber in which a substrate is arranged and a discharge gas is introduced; a 　　 substrate holder that holds the substrate in the chamber; 　　 substrate holder A support portion that supports the substrate holder in the chamber; and a voltage application means that makes the substrate holder a cathode and at least the chamber and the substrate holder support portion is an anode, and applies a voltage to the substrate Wherein 　　 irradiates the surface of the substrate with ions or electrons generated in the chamber due to the discharge generated by the voltage application by the voltage application means, thereby performing the surface treatment of the substrate, 　　 the substrate holder and the substrate The holder support portion is connected via a floating portion electrically insulated from the substrate holder and the substrate holder support portion. In order to achieve the above object, the film forming apparatus of the present invention includes: the above substrate processing apparatus; and a film forming processing section that performs film forming processing on the surface of the substrate subjected to the surface treatment through the substrate processing apparatus. [Comparing the efficacy of the previous technology]

According to the present invention, the surface to be treated can be uniformly processed over the entire surface of the substrate using the reverse sputtering principle.

Hereinafter, suitable embodiments and examples of the present invention will be described with reference to the drawings. However, the following embodiments and examples are only examples of preferred constitutions of the present invention, and the scope of the present invention is not limited to these constitutions. In addition, the hardware configuration and software configuration, processing flow, manufacturing conditions, dimensions, materials, shapes, etc. of the device in the following description do not limit the scope of the present invention to such intent unless there is a specific description.

(Example 1) <Overall Configuration of Film Forming Apparatus> FIG. 4 is a schematic diagram schematically showing the overall configuration of the film forming apparatus 1 according to an embodiment of the present invention. The film forming apparatus 1 includes a storage chamber 11 that houses the substrate 2 subjected to film formation, a heating chamber 12 that performs heating treatment of the substrate 2, and a film formation chamber 13 that performs film formation on the surface of the substrate 2 to be processed. The film-forming chamber 13 is provided with a substrate processing device 14 for pre-processing such as washing the surface of the substrate 2 before the film-forming process, etc., and an etching process, and performing a film-forming process on the surface of the substrate 2 The sputtering device 15 of the film formation processing section. The film forming apparatus 1 of the present embodiment has a configuration in which the substrate 2 is transported between the chambers in a vertical state (the surface to be processed is in a vertical posture) (refer to FIG. 1 ).

FIG. 5 is a flowchart of the film formation process. The substrate 2 is sequentially transferred from the storage chamber 11 to the heating chamber 12 (S101), from the heating chamber 12 to the film formation chamber 13 of the substrate processing apparatus 14 (S103), and from the substrate processing apparatus 14 to the sputtering apparatus 15 (S105), The film formation process is carried out. After the substrate 2 is heat-treated by the heater 121 through the heater 121 (S102), first, the surface treatment by the substrate processing apparatus 14 using the film-forming chamber 13 is performed (S104). The substrate 2 subjected to the surface treatment is then subjected to a sputtering process using targets 151, 152, and 153 made of various materials based on the sputtering device 15 (S106), and the film forming process is completed.

The film forming apparatus 1 according to this embodiment can be applied to various electrode formation accompanying pretreatment, for example. As a specific example, for example, a plating seed film for a FC-BGA (Flip-Chip Ball Grid Array) mounting substrate and a metal laminated film for a SAW (Surface Acoustic Wave) device are formed. In addition, the formation of a conductive hard film on the junction portion of the LED, a terminal film of the MLCC (Multi-Layered Ceramic Capacitor), and the like are also exemplified. In addition, it can also be applied to the formation of an electromagnetic shielding film for an electronic component package and a terminal film of a chip resistor. The size of the processing substrate 2 can be exemplified by a range of approximately 50 mm×50 mm to 600 mm×600 mm. Examples of the material of the substrate 2 include glass, alumina, ceramics, and LTCC (Low Temperature Co-fired Ceramics).

<Substrate Processing Apparatus> FIG. 1 is a schematic diagram schematically showing the overall configuration of the substrate processing apparatus 14 according to this embodiment. 1( a) is a schematic diagram including a configuration diagram when the configuration of the substrate processing apparatus 14 is viewed from the transport direction of the substrate 2, and FIG. 1 (b) is a substrate holding viewed from a direction facing the surface to be processed 21 of the substrate 2. Schematic diagram of the configuration of the support and the substrate holder support. The substrate processing apparatus 14 includes a chamber 41 constituting the film forming chamber 13, a substrate holder 42, a substrate holder support 43, a matching box 44 as a voltage application means, a high-frequency power supply 45, a pressure adjustment means 46, and gas supply means 47.

The substrate 2 is transported between the chambers of the film forming apparatus 1 in the upright state as described above, and is also disposed in the chamber 41 with the processed surface 21 being vertical (the processed surface 21 faces the horizontal direction) . As shown in FIG. 1, the substrate 2 presses the peripheral portion of the surface to be processed 21 through the pressing frame 421 so that the surface opposite to the surface to be processed 21 is pressed against the substrate holder 42 to press the frame 421 and the substrate holder The state between 42 is held. The pressing frame 421 is fixed to the substrate holder 42 via fasteners 423 such as screws so as to maintain the state where the substrate 2 is sandwiched between the substrate holders 42. The substrate holder 42 that holds the substrate 2 as above is supported by the substrate holder support 43. The substrate holder supporting portion 43 is configured to include wheels 431 as a conveying means underneath, and can be moved by the guide rail 432 laid on the bottom surface of the chamber 41 in the chamber 41 while supporting the substrate holder 42.

The substrate holder 42 and the substrate holder support portion 43 are connected as structural members, and are connected via a floating portion 50 electrically insulated from both. The floating portion 50 is a metal plate-shaped member such as SUS (stainless steel), which is parallel to the substrate 2 at a position slightly below the substrate 2 and is longer than the lower end side of the substrate 2 in front and rear to extend along the substrate 2 The posture of the extending direction (the conveying direction of the substrate 2) is set. As for the material of the floating portion 50, in addition to SUS, metal such as aluminum, which is generally used in the chamber of the film forming apparatus, can be used.

The floating portion 50 serves as an insulating mechanism, and is connected to the substrate holder 42 via the first insulating member 501 and to the substrate holder support 43 via the second insulating member 502. Although the insulating members 501 and 502 are made of PEEK (Poly Ether Ether Ketone: polyether ether ketone resin), insulating resins such as ceramics and polytetrafluoroethylene (registered trademark) can also be used.

Among the inner walls of the chamber 41, the side wall surface and the upper surface, and the outer surface of the substrate holder supporting portion 43 are covered with a protective plate 481 (a metal plate such as SUS or aluminum). In addition, a protective plate 482 is also provided on the opposite side of the substrate mounting surface side of the substrate holder 42. The guard plates 481 and 482 are materials that prevent the inner wall of the chamber 41 and the outer surfaces of the substrate holder supporting portion 43 and the substrate holder 42 from being scattered during film formation. The protective plates 481 and 482 are configured to be detachable, making it easy to perform maintenance such as washing and exchange. The shield plate 481 is connected to the chamber 41 or the substrate holder supporting portion 43, and these become the GND potential (anode). In addition, the protective plate 482 is applied with a potential similar to the substrate holder 42 and becomes a part of the cathode.

<Substrate surface treatment using the reverse sputtering principle> In a state where the substrate 2 is installed in the chamber 41, the discharge gas is supplied into the chamber 41 through the gas supply means 47, and at the same time through a pressure adjustment means such as a vacuum pump 461 46. Maintain the pressure in the chamber 41 to a predetermined pressure (for example, 0.3 to 1.2 Pa). As for the discharge gas, for example, O ₂ , N ₂ , Ar, CF ₃ , NF ₃ and these mixed gases, atmosphere, etc. are mentioned. The substrate holder 42 is connected to the matching box 44 and the high-frequency power supply 45 via the power supply unit 46, and a predetermined high-frequency voltage (for example, 50 to 400W/210mm×320mm (vehicle area)) that is impedance-matched through the matching box 44 is applied. = 0.07 to 0.60 W/cm ² (driving power)).

By the above voltage application, the plasma P is formed in the vicinity of the surface to be processed 21 of the substrate 2 and the substrate holder 42. In addition, the ions or electrons in the plasma P irradiate and collide with the surface 21 of the substrate 2 to be etched. With this, for example, in the pretreatment of the subsequent film formation process (sputtering), the natural oxide film formed on the surface to be treated 21, contamination of organic substances, and the like can be removed, and a cleaning effect and a substrate surface active effect can be obtained.

<Excellent points of the present embodiment> 　　 Referring to FIGS. 1 to 3, the advantages of the present embodiment will be described. FIG. 2 is a schematic diagram for explaining and comparing the characteristics of the substrate processing apparatus 14 according to this embodiment with the comparative example. FIG. 2(a) is a schematic diagram illustrating the configuration of the connection portion of the substrate holder 42 and the substrate holder supporting portion 43 of the substrate processing apparatus 14 according to this embodiment (the periphery of the floating portion 50 in FIG. 1(a) Enlarged image). FIG. 2(b) is a circuit diagram schematically showing the circuit configuration of the substrate processing apparatus 14 according to this embodiment. FIG. 2(c) is a schematic diagram illustrating the configuration of the connection portion between the substrate holder 42 and the substrate holder support 43 in the comparative example. FIG. 2(d) is a circuit diagram schematically showing the circuit configuration of the substrate processing apparatus 14 in the comparative example. FIG. 3 is a schematic diagram showing the plasma region formed in the comparative example (for comparison with FIG. 1(b) of the present embodiment).

As shown in FIG. 1, the substrate holder support portion 43 is connected to the GND potential via the chamber 41. In terms of voltage application means for applying voltage to the substrate 2, the substrate holder 42 becomes the cathode, and the substrate holder support portion 43 and the chamber 41 becomes the anode. Here, as shown in FIGS. 2(a) and (b), in this embodiment, an electrically insulating floating portion is provided between the substrate holder 42 serving as the cathode and the substrate holder supporting portion 43 serving as the anode 50.

Here, in order to obtain a uniform etching effect over the entire area of the processed surface 21 of the substrate 2, it is necessary to form the plasma P in a wider range than the processed surface 21. That is, as shown in FIG. 1(b), by forming a region A1 that is spread over a wide area above the upper end edge of the processed surface 21 of the substrate 2 and an area that is left and right outside the left and right side edges of the processed surface A2, A3, and the plasma P of each of the regions A4 below the lower end side of the surface to be processed 21 enable a sufficient etching effect to be obtained even around the periphery of the surface to be processed 21.

In the comparative example, as shown in FIGS. 2(c) and (d), on the one hand, the connecting portion 49 connecting the substrate holder 42 and the substrate holder supporting portion 43 is connected to the substrate holder 42 via an insulating member 491, and On the one hand, the substrate holder supporting portion 43 is connected via the metal member 492 without being insulated. For this reason, the connecting portion 49 has the same potential as the substrate holder supporting portion 43. Therefore, in the comparative example, as shown in FIGS. 2( c) and 3, the anode region has a structure extending so as to shield the substrate holder 42 as the cathode from the region A4 where the plasma P is to be formed. For this reason, electrons fall to the GND potential in the area A4, and the plasma P does not diffuse from the lower edge 22 of the substrate 2 to the area A4 below. The density of the plasma is in the area around the lower edge of the processed surface 21 of the substrate 2 (and The area close to the area A4) becomes low. As a result, the area where the etching is distributed around the lower edge of the surface to be treated 21 may deteriorate.

On the other hand, in this embodiment, the floating portion 50 which is a connection portion between the substrate holder 42 as the cathode and the substrate holder support 43 as the anode is electrically insulated from the cathode and the anode, It does not hinder the charging of electrons in the area A4. As a result, as shown in FIGS. 1(b) and 2(a), the plasma P diffuses to the region A4 and can be obtained in a region (a region close to the region A4) around the lower end side of the processed surface 21 of the substrate 2 Full etching effect.

<Others> 　　 The placement of the floating portion electrically insulated from the cathode and anode shown in this embodiment is only an example, and the suitable placement of the floating portion varies depending on the device configuration. That is, in the present embodiment, in order to configure the device for transporting the substrate in the vertical direction, it is necessary to provide a floating portion around the lower end of the substrate in the vicinity of the substrate holder supporting structure as the anode. For example, in a device configuration in which the substrate is placed horizontally and reverse sputtering processing is performed, the floating portion may be provided so as to surround the periphery of the substrate. Alternatively, it may be configured such that only a necessary area is provided among the areas along the outer periphery of the substrate, that is, only a portion of the constituent portions connected to the anode that is close to the periphery of the substrate is changed to a floating portion.

In addition, in this embodiment, although the description is made on the premise that the installation surface of the substrate holder support portion 43 on the inner wall of the chamber 41 is a horizontal plane, the up, down, left, and right directions are defined, but as long as the direction of the installation surface changes, the up, down, left, and right Of course, the definition of direction also changes according to it.

1‧‧‧film forming device 2‧‧‧substrate 21‧‧‧surface to be processed 14‧‧‧substrate processing device 41‧‧‧chamber 42‧‧‧substrate holder 43‧‧‧substrate holder support 44‧ ‧‧ Matching box 45‧‧‧High frequency power supply 46‧‧‧Pressure adjustment means 47‧‧‧Gas supply means 50‧‧‧Floating part 481, 482‧‧‧Protection plate 501, 502‧‧‧Insulation structure material P ‧‧‧Plasma

[FIG. 1] Schematic diagram of a substrate processing apparatus related to an embodiment of the present invention [FIG. 2] A comparative explanatory diagram of an embodiment of the present invention and a comparative example [FIG. 3] An explanatory diagram of a plasma region in the comparative example [FIG. 4] Schematic diagram of a film forming apparatus related to an embodiment of the present invention [FIG. 5] Flow chart of film forming process

2‧‧‧ substrate

14‧‧‧Substrate processing device

21‧‧‧ Treated surface

41‧‧‧ Chamber

42‧‧‧ substrate holder

43‧‧‧Substrate holder support

44‧‧‧ Matching box

45‧‧‧High frequency power supply

46‧‧‧Pressure adjustment method

47‧‧‧Gas supply means

50‧‧‧Floating Department

421‧‧‧Press frame

423‧‧‧fastener

431‧‧‧wheel

432‧‧‧rail

461‧‧‧Vacuum pump

481、482‧‧‧Protection board

501, 502‧‧‧Insulation structural material

A1, A2, A3, A4

P‧‧‧Plasma

Claims (10)

A substrate processing apparatus includes: a 　　 chamber in which a substrate is arranged and a discharge gas is introduced; a 　　 substrate holder that holds the substrate in the chamber; a 　　 substrate holder support portion that holds the substrate holder in the chamber Support in the room; and a voltage applying means that makes the substrate holder a cathode and at least the chamber and the substrate holder supporting portion as an anode, and applies a voltage to the substrate; wherein, 　　 will be a voltage that passes through the voltage applying means The discharge generated by the application causes ions or electrons generated in the chamber to irradiate the surface of the substrate to perform the surface treatment of the substrate. The substrate holder and the substrate holder supporting portion pass through the substrate holder and The above-mentioned substrate holder supporting portion is electrically connected to the floating portion and is connected. As in the substrate processing apparatus of claim 1, the floating portion is arranged on at least a part of a region along the outer periphery of the substrate. A substrate processing apparatus according to claim 1 or 2, wherein the floating portion is disposed between the substrate holder support portion and a portion of the periphery of the substrate that is close to the substrate holder support portion. A substrate processing apparatus according to claim 1 or 2, wherein the substrate holder holds the substrate so that the surface to be processed is vertical, and the floating portion is disposed below the lower end of the substrate. According to the substrate processing apparatus of claim 4 of the patent application range, the floating portion has a portion that is close to the entire lower area of the lower end portion of the substrate. The substrate processing apparatus according to claim 1 or 2, wherein the floating portion is connected to the substrate holder and the substrate holder support portion via an insulating member. According to the substrate processing apparatus of claim 1 or 2, the floating part is a metal plate-shaped member and is arranged parallel to the surface to be processed of the substrate. The substrate processing apparatus as claimed in item 1 or 2 of the patent application further includes a shield plate disposed in the chamber, and the shield plate is included in the anode. According to the substrate processing apparatus of claim 1 or 2, the substrate holder supporting portion is configured to be movable in the chamber. A film forming apparatus comprising: a substrate processing device as described in any one of claims 1 to 9; and a film forming processing section that performs film forming processing on the surface of a substrate subjected to surface treatment through the substrate processing device.

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