KR102392557B1 - Substrate processing method, substrate processing apparatus and film-forming apparatus - Google Patents

Abstract

[Problem] To provide a technique capable of obtaining a high cleaning effect without impairing the insulation of the insulating resin substrate.
[Solutions] A method for cleaning an insulating resin substrate includes a first cleaning step of cleaning the surface of the insulating resin substrate in a first gas atmosphere, and after the first cleaning step, the surface of the insulating resin substrate in a second gas atmosphere and a second cleaning process of cleaning the Here, the first gas is a gas that generates a physical cleaning action, and the second gas is a gas that generates a chemical cleaning action.

Description

SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS AND FILM-FORMING APPARATUS

The present invention relates to a substrate processing method, a substrate processing apparatus, and a film forming apparatus.

In the film-forming apparatus of a semiconductor device, the cleaning process of the substrate surface by an ion beam or plasma may be performed prior to a film-forming process. In such a cleaning process, atmospheric gas is selected according to the purpose. For example, in Patent Document 1, a mixed gas of argon and oxygen (Ar+O ₂ ) is used for the removal treatment of the organic material film, and the ratio of argon and oxygen is 97%: 3% in order to obtain a high ashing rate. It is disclosed that it is good to set it. In Patent Document 2, as atmospheric gas for the cleaning process of polymer debris, a mixed gas of oxygen and nitrogen (O ₂ +N ₂ ), a mixed gas of hydrogen and argon (H ₂ +Ar), and a mixed gas of argon and nitrogen (Ar+N ₂ ) ), a mixed gas of oxygen and argon (O ₂ +Ar) is disclosed. Further, in Patent Document 3, in the dry etching treatment of a laminate comprising an electrode film/perovskite layer/electrode film, a mixed gas of argon, oxygen, and chlorine (Ar+O ₂ +Cl ₂ ), a mixed gas of argon and oxygen (Ar+O) ₂ ) is disclosed.

Japanese Patent Laid-Open No. 2006-278748 Japanese Patent Laid-Open No. 2003-059902 Japanese Patent Laid-Open No. 2006-019729

The cleaning process in a noble gas atmosphere such as argon gas has an advantage that a high cleaning effect can be obtained by a physical cleaning action (etching). However, the cleaning treatment in a rare gas atmosphere is not suitable for a substrate made of an insulating resin material such as polyimide. This is because the insulation of the substrate surface may be lost due to collision of high-energy ions. On the other hand, cleaning treatment in an atmosphere such as oxygen gas reacts with organic substances of the substrate to perform chemical cleaning, and has the advantage of not impairing the insulation of the substrate surface, but has a disadvantage that the cleaning effect is low.

This invention was made in view of the said situation, and an object of this invention is to provide the technique which can acquire a high cleaning effect, without impairing the insulation of an insulating resin substrate.

A first aspect of the present invention is a method for cleaning an insulating resin substrate, a first cleaning step of cleaning the surface of the insulating resin substrate in a first gas atmosphere, and after the first cleaning step, the insulating resin in a second gas atmosphere a second cleaning step of cleaning the surface of the substrate, wherein the first gas is a gas that generates a physical cleaning action, and the second gas is a gas that generates a chemical cleaning action A method for cleaning an insulating resin substrate is provided.

According to this method, by first performing the first cleaning step, a high cleaning effect due to the physical cleaning action can be obtained. Here, although the insulation of the surface of the insulating resin substrate may be lost due to the first cleaning step, by performing the second cleaning step after the first cleaning step, the insulation of the surface of the substrate can be restored by its chemical action. . Therefore, it becomes possible to acquire a high cleaning effect, without impairing the insulation of an insulating resin substrate.

A second aspect of the present invention is a method for cleaning an insulating resin substrate, comprising a cleaning step of cleaning the surface of the insulating resin substrate in an atmosphere containing at least one of a first gas and a second gas, the first gas comprising: , a gas that generates a physical cleaning action, the second gas is a gas that generates a chemical cleaning action, and at the start of the cleaning process, a ratio of the first gas is higher than that of the second gas, At the end of the process, the ratio of the first gas to the second gas in the atmospheric gas is changed so that the ratio of the second gas is higher than that of the first gas. provides

According to this method, a high cleaning effect due to a physical cleaning action can be obtained at the start of the cleaning process. At this time, although the insulation of the surface of the insulating resin substrate may be lost, at the end of the cleaning process, the insulation of the surface of the substrate can be restored by the chemical action of the second gas. Therefore, it becomes possible to acquire a high cleaning effect, without impairing the insulation of an insulating resin substrate.

A third aspect of the present invention is a substrate processing apparatus for cleaning an insulating resin substrate, comprising: a chamber in which an insulating resin substrate is disposed; first gas introduction means for introducing a first gas into the chamber; second gas introduction means for introducing two gases, cleaning means for cleaning the surface of the insulating resin substrate, and control means, wherein the first gas is a gas for generating a physical cleaning action, and the second gas The gas is a gas that generates a chemical cleaning action, and the control means includes, after a first cleaning of cleaning the surface of the insulating resin substrate in the first gas atmosphere is performed, and then the insulating resin substrate in the second gas atmosphere. and controlling the first and second gas introduction means so that a second cleaning for cleaning the surface of the substrate is performed.

According to this configuration, by first performing the first cleaning, a high cleaning effect due to the physical cleaning action can be obtained. Here, although the insulating property of the surface of the insulating resin substrate may be lost by the first washing, by performing the second washing after the first washing, the insulating property of the substrate surface can be restored by the chemical action thereof. Therefore, it becomes possible to acquire a high cleaning effect, without impairing the insulation of an insulating resin substrate.

A fourth aspect of the present invention is a substrate processing apparatus for cleaning an insulating resin substrate, comprising: a chamber in which an insulating resin substrate is disposed; first gas introduction means for introducing a first gas into the chamber; second gas introduction means for introducing two gases, cleaning means for cleaning the surface of the insulating resin substrate, and control means, wherein the first gas is a gas for generating a physical cleaning action, and the second gas The gas is a gas that generates a chemical cleaning action, and the control means is configured to, when cleaning the surface of the insulating resin substrate in an atmosphere containing at least one of the first gas and the second gas, at the start of cleaning controls the first and second gas introduction means such that the ratio of the first gas is higher than that of the second gas, and the ratio of the second gas is higher than that of the first gas when the cleaning is finished. A substrate processing apparatus comprising

According to this configuration, a high cleaning effect due to a physical cleaning action can be obtained when cleaning is started. At this time, although the insulation of the surface of the insulating resin substrate may be lost, at the end of cleaning, the insulation of the surface of the substrate can be restored by the chemical action of the second gas. Therefore, it becomes possible to acquire a high cleaning effect, without impairing the insulation of an insulating resin substrate.

ADVANTAGE OF THE INVENTION According to this invention, a high cleaning effect can be acquired, without impairing the insulation of an insulating resin substrate.

BRIEF DESCRIPTION OF THE DRAWINGS It is a top view which shows typically the internal structure of an in-line type film-forming apparatus.
2 is a flowchart showing the operation of the film forming apparatus according to the first embodiment.
It is a schematic diagram which shows the structure of the substrate processing apparatus of 1st Embodiment.
Fig. 4 is a schematic view of the internal configuration of the substrate processing apparatus viewed in the transport direction of the substrate.
It is a figure which shows control of conveyance of the board|substrate and beam irradiation in 1st Embodiment.
It is a figure which shows control of the flow volume of the gas in 1st Embodiment.
It is a figure which shows control of conveyance of the board|substrate and beam irradiation in 2nd Embodiment.
It is a figure which shows control of the flow volume of the gas in 2nd Embodiment.
It is a schematic diagram which shows the structure of the substrate processing apparatus of 3rd Embodiment.
It is a schematic diagram which shows the structure of the substrate processing apparatus of 4th Embodiment.
It is a figure which shows control of the flow volume of gas and control of voltage application in 4th Embodiment.
12 is a schematic diagram showing the configuration of a film forming apparatus and a substrate processing apparatus according to a fifth embodiment.

EMBODIMENT OF THE INVENTION Hereinafter, preferred embodiment and Example of this invention are described, referring drawings. However, the following embodiments and examples are merely illustrative of preferred configurations of the present invention, and do not limit the scope of the present invention to such configurations. In addition, in the following description, the hardware configuration and software configuration of the device, processing flow, manufacturing conditions, dimensions, material, shape, etc. are intended to limit the scope of the present invention only as such, unless specifically stated otherwise. not of

<First embodiment>

(The overall configuration of the film forming apparatus)

1 is a perspective view schematically showing the overall internal configuration of a film forming apparatus 1 according to a first embodiment of the present invention. The film forming apparatus 1 includes a stocker chamber 11 in which a substrate 2 to be film-formed is accommodated, a heating chamber 12 in which a heat treatment of the substrate 2 is performed, and a pretreatment surface of the substrate 2 to be processed. and a processing chamber 13 for performing a film forming process. The processing chamber 13 includes a pre-processing area 13A and a film-forming area 13B, and in the pre-processing area 13A, pre-processing such as cleaning of the target surface of the substrate 2 is performed prior to the film-forming process. A substrate processing apparatus 14 for performing a film formation process is provided, and in the film formation area 13B, a sputtering apparatus 15 as a film formation processing unit for performing a film formation process on the target surface of the substrate 2 is provided. The film-forming apparatus 1 of this embodiment has a so-called in-line type structure which performs a series of processes of heating - pre-processing - film-forming while conveying the board|substrate 2 .

2 is a flowchart showing the operation of the film forming apparatus 1 . A plurality of substrates 2 are accommodated in the stocker chamber 11 . Among them, the substrate 2 to be processed is transferred from the stocker chamber 11 to the heating chamber 12 (step S101), and heated by the heater 121 (step S102). In this embodiment, the board|substrate 2 is heated from 100 degreeC to about 180 degreeC by heat processing for about ten minutes. Thereafter, the substrate 2 is transferred from the heating chamber 12 to the pre-processing area 13A of the processing chamber 13 (step S103 ). In the pre-processing area 13A, a cleaning process is performed on the to-be-processed surface of the substrate 2 by the substrate processing apparatus 14 (step S104). Next, the board|substrate 2 is conveyed to the film-forming area 13B (step S105), and sputtering process is performed with respect to the to-be-processed surface of the board|substrate 2 by the sputtering apparatus 15 (step S106). The targets 151 and 152 used in the sputtering process may be of the same material or different materials. Thus, the film-forming process with respect to the board|substrate 2 is complete|finished. The substrate 2 after processing is discharged to the stocker chamber 11 .

The film-forming apparatus 1 which concerns on this embodiment is applicable to various electrode formation accompanying pre-processing, for example. Specific examples include, for example, a plating seed film for FC-BGA (Flip-Chip Ball Grid Array) mounting substrates and film formation of a metal lamination film for SAW (Surface Acoustic Wave) devices. Moreover, the film formation of the electroconductive hard film in the bonding part of LED, the terminal part film of MLCC (Multi-Layered 　 Ceramic 　 Capacitor), etc. are mentioned. In addition, it is applicable also to the film-forming of the electronic shield film in an electronic component package, or the terminal part film of a tip resistor.

As for the size of the board|substrate 2, the thing of the range of about 50 mm x 50 mm - 600 mm x 600 mm can be illustrated. As the substrate 2, an insulating resin substrate made of a polyimide-based resin is used. Moreover, with respect to the board|substrate which consists of another material, you may use the board|substrate coated with the polyimide-type resin.

(substrate processing unit)

3 and 4 are schematic diagrams showing the configuration of the substrate processing apparatus 14 according to the present embodiment. FIG. 3 is a schematic diagram of the internal configuration of the substrate processing apparatus 14 viewed from above, and FIG. 4 is a schematic diagram of the internal configuration of the substrate processing apparatus 14 viewed in the conveyance direction of the substrate 2 .

The substrate processing apparatus 14 of this embodiment is an apparatus for performing a cleaning process of the surface (to-be-processed surface) of an insulating resin substrate, Comprising: The chamber 41, the board|substrate support part 42, the 1st gas introduction part 43 generally. ), a second gas introduction unit 44 , a control unit 45 , and a beam irradiation unit 46 .

The chamber 41 is an airtight container constituting the processing chamber 13 . The inside of the chamber 41 is maintained in a pressure-reduced state by an exhaust pump (not shown). The substrate support part 42 is a substrate transport means capable of moving on a rail 410 installed on the bottom surface of the chamber 41 while supporting the substrate 2 in a vertical state. The first gas introduction unit 43 is a device for introducing a first gas into the chamber 41 , and includes a gas introduction pipe 430 connecting between the first gas supply source (not shown) and the chamber 41 ; It is comprised by the flow control apparatus 431, such as MFC (mass flow controller), the on-off valve 432, etc. In addition, the second gas introduction part 44 is a device for introducing the second gas into the chamber 41 , and a gas introduction pipe 440 connecting the second gas supply source (not shown) and the chamber 41 . ), a flow control device 441 , an on/off valve 442 , and the like. The beam irradiation unit 46 is a cleaning means for cleaning the surface of the substrate 2 by irradiating the surface of the substrate 2 with an ion beam of high energy. The control unit 45 is a device for controlling the operation of each unit of the substrate processing apparatus 14 . Specifically, the control unit 45 includes movement of the substrate support unit 42 , control of flow rates of the first gas introduction unit 43 and the second gas introduction unit 44 , and control of the ion beam irradiated from the beam irradiation unit 46 . do etc.

The substrate processing apparatus 14 of this embodiment performs a first cleaning of cleaning the surface of the substrate 2 in a first gas atmosphere, and then performing a second cleaning of cleaning the surface of the substrate 2 in a second gas atmosphere. It is characterized in that it does Here, as the first gas, a gas that generates a physical cleaning action, that is, when an ion beam is irradiated to the substrate 2 in the first gas atmosphere, a physical cleaning action is exerted on the surface of the substrate 2 (or gas (where the physical cleaning action dominates) is used. For example, a noble gas such as argon (Ar) or neon (Ne) can be preferably used. In this embodiment, argon gas is used from the advantage that a favorable etching action|action can be acquired. On the other hand, as the second gas, a gas that generates a chemical cleaning action, that is, when an ion beam is irradiated to the substrate 2 in a second gas atmosphere, a chemical cleaning action is exerted on the surface of the substrate 2 (or gas (where a chemical cleaning action is dominant) is used. For example, oxygen (O ₂ ), nitrogen (N ₂ ), etc. can be preferably used. However, when nitrogen gas is used, since a detoxification facility for removing the generated cyanide is required, in the present embodiment, an unnecessary oxygen gas is used for the detoxification facility.

(control of washing process)

Control of the washing process of this embodiment is demonstrated with reference to FIG.5 and FIG.6. Fig. 5 shows control of conveyance of the substrate 2 and beam irradiation, and Fig. 6 shows control of the flow rate of gas introduced into the chamber. 5 and 6, t1, t2, ... represents the time.

First, the control unit 45 moves the substrate 2 to the start position (home position), and the flow rate control unit 431 of the first gas introduction unit 43 and the flow rate control unit 44 of the second gas introduction unit 44 ( 441) respectively, and the flow rate ratio of the flow rate F1 of the first gas and the flow rate F2 of the second gas is set to F1:F2=100%:0% (t1). Then, the control unit 45 scans the surface of the substrate 2 with an ion beam irradiated from the beam irradiation unit 46 while moving the substrate 2 in the right direction in the figure at a constant speed in the first gas atmosphere. (t2). When the substrate 2 reaches the end position (that is, when the scanning of the surface of the substrate 2 is completed), the control unit 45 stops beam irradiation and movement of the substrate 2 (t3). In addition, introduction of the first gas is also stopped. The process from t1 to t3 up to this point is the first cleaning process.

Then, while returning the board|substrate 2 back to a start position, the control part 45 controls the flow control apparatuses 431, 441, and the flow rate ratio of 1st gas and 2nd gas is F1:F2=0%. : Set to 100% (t4). Then, the control unit 45 scans the surface of the substrate 2 with an ion beam while moving the substrate 2 in the right direction in the figure at a constant speed in the second gas atmosphere (t5). When the substrate 2 reaches the end position, the control unit 45 stops beam irradiation (t6). This process from t4 to t6 is the second cleaning process.

According to the cleaning treatment as described above, by first performing the first cleaning step, it is possible to obtain a high cleaning effect by a physical cleaning action (etching action) in the first gas atmosphere. Here, although the insulation of the surface of the resin substrate may be lost by the first cleaning step, by performing the second cleaning step after the first cleaning step, the insulation of the surface of the substrate can be restored by its chemical action. Therefore, it becomes possible to acquire a high cleaning effect, without impairing the insulation of a resin substrate. Furthermore, it can be realized by simple control of changing the type of atmospheric gas and performing two beam scans. In addition, in this embodiment, although beam scanning was performed once each in the 1st cleaning process and the 2nd cleaning process, you may perform beam scanning multiple times in each cleaning process. Regarding the beam scanning direction, only the scanning direction for moving the substrate from the start position is disclosed in this embodiment. After the first cleaning step is completed, the second cleaning step moves the substrate in the direction returning to the start position. The beam may be scanned. In addition to the configuration of moving the substrate, the beam may be scanned by fixing the substrate, moving the beam irradiation unit 46 or changing the irradiation direction of the beam. Moreover, although the whole board|substrate may be cleaned, it is also possible to clean only a part of the board|substrate surface by irradiating a beam only in a necessary range.

<Second embodiment>

Next, a second embodiment of the present invention will be described. In the substrate processing apparatus 14 of this embodiment, the ratio of the first gas is higher than that of the second gas at the start of the cleaning process, and the ratio of the second gas is higher than that of the first gas when the cleaning process ends. It is characterized in that the ratio of the first gas and the second gas in the gas is changed. Configurations other than that may be the same as those of the first embodiment, so the description is omitted.

(control of washing process)

With reference to FIG. 7 and FIG. 8, the control of the washing process of this embodiment is demonstrated. FIG. 7 shows control of conveyance of the substrate 2 and beam irradiation, and FIG. 8 shows control of the flow rate of gas introduced into the chamber. 7 and 8, t1, t2, ... represents the time.

First, the control unit 45 moves the substrate 2 to the start position (home position), and sets the flow rate ratio of the first gas and the second gas to F1:F2=100%:0% (t1). Then, the control unit 45 scans the surface of the substrate 2 with the ion beam irradiated from the beam irradiation unit 46 while moving the substrate 2 in the right direction in the figure at a constant speed (t2). Next, the control unit 45 changes the flow rate ratio of the first gas and the second gas to F1:F2=66.7%:33.3% (t3), and then moves the substrate 2 to the left at a constant speed in the drawing. While moving, the second beam scan is performed (t4). Thereafter, the third beam scan is performed in an atmosphere of the flow rate ratio F1: F2 = 33.3%: 66.7% (t5 to t6), and the fourth beam scan is performed in an atmosphere of the flow rate ratio F1: F2 = 0%: 100%. performed (t7 to t8). In this embodiment, as shown in FIG. 8, the flow rate ratio is maintained constant during the period (during beam scanning) in which a beam is irradiated to the surface of the board|substrate 2 . It is because non-uniformity does not generate|occur|produce in the result of surface treatment.

According to the above control, at the start of the cleaning treatment, the cleaning treatment is performed in an atmosphere dominated by the first gas, and a high cleaning effect can be obtained by a physical cleaning action (etching action). At this time, although the insulation of the surface of the resin substrate may be lost, since the treatment is performed in an atmosphere dominated by the second gas at the end of the cleaning treatment, the insulation of the surface of the substrate can be restored by its chemical action. Therefore, it becomes possible to acquire a high cleaning effect, without impairing the insulation of a resin substrate. Furthermore, it can be realized by simple control of performing beam scanning while changing the flow rate ratio of the atmospheric gas.

In this embodiment, as shown in Fig. 8 , the flow rate F2 of the second gas at the start of the cleaning process is set to 0, and the flow rate F1 of the first gas at the end of the cleaning process is set to 0, and the flow rates of each gas are set to 0. Although it is changed linearly, such control is an example. For example, at the start of the cleaning process, the flow rate of the second gas may be set to F2>0, and at the end of the cleaning process, the flow rate of the first gas may be set to F1>0. Moreover, also about the flow volume of each gas, you may change it nonlinearly, or you may change it stepwise. That is, if the flow rate at the start of the cleaning process is F1 > F2 and the flow rate at the end becomes F1 < F2 (in other words, when the cleaning process starts, the cleaning action of the first gas becomes dominant, and the cleaning process ends In this case, as long as the cleaning action of the second gas becomes dominant), it does not matter how the flow rate of each gas is controlled.

<Third embodiment>

9 shows the configuration of the substrate processing apparatus 14 according to the third embodiment. In the substrate processing apparatus 14 of the present embodiment, beam irradiation units 46A and 46B are provided on both sides with the substrate 2 sandwiched therebetween. According to this structure, both surfaces of the board|substrate 2 can be wash|cleaned simultaneously by one scan. Alternatively, the two substrates 2 can be simultaneously cleaned by supporting the two substrates 2 in parallel to the substrate support portion. Accordingly, it is possible to provide a substrate processing apparatus having higher productivity than the first and second embodiments. In addition, about the specific control of a washing|cleaning process, you may be the same as that of 1st and 2nd embodiment.

<Fourth embodiment>

10 shows the configuration of the substrate processing apparatus 14 according to the fourth embodiment. While the first to third embodiments were configured to perform a cleaning treatment by an ion beam, the present embodiment is a configuration in which a plasma cleaning treatment is performed by a reverse sputtering method.

The substrate processing apparatus 14 of this embodiment is schematically a chamber 41, the substrate support part 42, the 1st gas introduction part 43, the 2nd gas introduction part 44, the control part 45, a voltage application member ( 47) and a high-frequency power supply 48. The difference from the above-described embodiment is that, instead of the beam irradiation unit, the voltage applying member 47 and the high frequency power supply 48 are provided. Configurations other than that may be basically the same as those of the above-described embodiment, so the description is omitted.

(control of washing process)

With reference to FIG. 11, the control of the washing|cleaning process of this embodiment is demonstrated. 11 shows control of the flow rate of the gas introduced into the chamber and control of the voltage application member 47 .

First, the control unit 45 moves the substrate 2 to a predetermined processing position in the substrate processing apparatus 14 (t1). At this time, the voltage application member 47 and the electrode 421 of the substrate support part 42 come into close contact, and electrical connection between them is achieved. Then, the control unit 45 sends a flow rate indication signal to the flow rate control device 431 of the first gas introduction unit 43 and the flow rate control unit 441 of the second gas introduction unit 44, respectively, and controls the flow rate of the first gas. A flow rate ratio of the flow rate F1 and the flow rate F2 of the second gas is set to F1:F2=100%:0% (t2). Then, the control unit 45 controls the voltage application member 47 to apply a predetermined high-frequency voltage to the substrate support unit 42 through the electrode 421 (t3). By this voltage application, plasma P of the first gas is formed in the vicinity of the surface of the substrate 2 (refer to FIG. 10). The cleaning process of the surface of the substrate 2 is performed by collision of ions in the plasma P.

Thereafter, the control unit 45 changes the flow rate ratio of the first gas and the second gas gradually while maintaining the voltage application, and finally sets F1:F2=0%:100% (t4). Therefore, the chemical cleaning process by the plasma P of the 2nd gas is finally performed.

According to the above control, at the start of the cleaning treatment, the cleaning treatment is performed in an atmosphere dominated by the first gas, and a high cleaning effect can be obtained by a physical cleaning action (etching action). At this time, although the insulation of the surface of the resin substrate may be lost, since the treatment is performed in an atmosphere dominated by the second gas at the end of the cleaning treatment, the insulation of the surface of the substrate can be restored by its chemical action. Therefore, it becomes possible to acquire a high cleaning effect, without impairing the insulation of a resin substrate. Furthermore, it can be realized by simple control such as changing the flow rate ratio of the atmospheric gas while the voltage is applied.

In this embodiment, the flow rate F2 of the second gas at the start of the cleaning process is set to 0, and the flow rate F1 of the first gas at the end of the cleaning process is set to 0, and the flow rates of each gas are changed linearly. is an example. For example, at the start of the cleaning process, the flow rate of the second gas may be set to F2>0, and at the end of the cleaning process, the flow rate of the first gas may be set to F1>0. Moreover, also about the flow volume of each gas, you may change it nonlinearly, or you may change it stepwise. Further, as in the first embodiment, the first half of the washing process may be switched in two stages, such as F1:F2=100%:0%, and the second half, F1:F2=0%:100%. That is, if the flow rate at the start of the cleaning process is F1 > F2 and the flow rate at the end becomes F1 < F2 (in other words, when the cleaning process starts, the cleaning action of the first gas becomes dominant, and the cleaning process ends In this case, as long as the cleaning action of the second gas becomes dominant), it does not matter how the flow rate of each gas is controlled.

<Fifth embodiment>

12 is a perspective view schematically showing the overall internal configuration of the film forming apparatus and the substrate processing apparatus according to the fifth embodiment. The film forming apparatus 1 is, in general, a chamber 41 , a substrate support portion 42 supporting a plurality of substrates 2 , a first gas introduction portion 43 , a second gas introduction portion 44 , and a control unit 45 . , a beam irradiation unit 46 , and a plurality of targets 151 and 152 . In addition, in order to help understanding, the same code|symbol is attached|subjected about the structural part same or corresponding to the above-mentioned embodiment.

The board|substrate support part 42 of this embodiment is a disk-shaped table rotatable clockwise, and has a structure which can support the 12 board|substrates 2 in the state perpendicular|vertical (standing state) on the upper surface. Each board|substrate 2 is arrange|positioned with the to-be-processed surface facing outward. The film-forming apparatus 1 of this embodiment has a so-called carousel type structure which performs a series of processes of heating - pre-processing - film-forming, rotating the board|substrate support part 42 . This film-forming apparatus 1 is suitable for the processing of the board|substrate 2 of a comparatively small size of about 100 mm on one side, for example.

(control of washing process)

First, the control unit 45 rotates the substrate support unit 42 clockwise at a constant rotation speed (eg, 20 rpm). In a stage in which rotation is stabilized, the control unit 45 irradiates an ion beam from the beam irradiation unit 46 and sequentially scans the surface of each substrate 2 . By performing this beam irradiation for about 3 minutes (that is, each board|substrate 2 is beam-scanned about 60 times at a time), the cleaning process of the board|substrate 2 surface is performed.

Also in this embodiment, similarly to the first embodiment (FIG. 6) described above, the first half cleaning process is performed in the first gas atmosphere, and the second half cleaning process is performed in the second gas atmosphere, or in the second embodiment (FIG. 8). ), the flow rate ratio of the first gas and the second gas may be changed during the cleaning process. Thereby, effects similar to those of the above-described embodiment can be obtained.

＜Others＞

Although preferred specific examples of the present invention have been described by exemplifying the first to fifth embodiments, the scope of the present invention is not limited to these specific examples and can be appropriately modified within the scope of the technical idea. For example, the configurations and control contents described in the first to fifth embodiments may be combined with each other as long as there is no technical contradiction. In addition, as the material of the first gas, the second gas, and the substrate, materials other than those exemplified in the first to fifth embodiments may be used. In addition, although the apparatus structure of an in-line type and carousel type was illustrated in the said embodiment, the structure of a substrate processing apparatus and a film-forming apparatus is not limited to these, Any kind may be sufficient.

1: film forming device
2: Substrate
11: Stocker room
12: heating chamber
13: processing room
13A: Pre-treatment area
13B: Formation area
14: Substrate processing apparatus
15: sputtering device
41: chamber
42: substrate support part
43: first gas introduction part
44: second gas introduction part
45: control
46, 46A, 46B: beam irradiation unit
47: No voltage application
48: high frequency power supply
121: heater
151, 152: target
410: rail
421: electrode
430: first gas introduction pipe
31: flow control device
432: on/off valve
440: second gas introduction pipe
441: flow control device
442: on/off valve

Claims (17)

delete A method for cleaning an insulating resin substrate, comprising:
a cleaning step of cleaning the surface of the insulating resin substrate in an atmosphere containing at least one of the first gas and the second gas;
The first gas is a gas that generates a physical cleaning action,
The second gas is a gas having an action of generating a chemical cleaning action and restoring the insulation of the insulating resin substrate,
The cleaning process is
a first step of scanning the surface of the insulating resin substrate with an ion beam in an atmosphere in which the ratio of the first gas is higher than that of the second gas while maintaining the ratio of the first gas to the second gas;
After the first process, in an atmosphere in which the ratio of the second gas is higher than that of the first gas, while maintaining the ratio of the first gas and the second gas, the surface of the insulating resin substrate is irradiated with an ion beam. A method of cleaning an insulating resin substrate comprising a second step of scanning. 3. The method of claim 2,
A method for cleaning an insulating resin substrate, wherein the ratio of the first gas is lowered in steps and the ratio of the second gas is increased stepwise from the start to the end of the cleaning process. 3. The method of claim 2,
The method for cleaning an insulating resin substrate, wherein the ratio of the second gas at the start of the cleaning process is 0, and the ratio of the first gas at the end of the cleaning process is 0. 3. The method of claim 2,
The first gas is a rare gas, wherein the cleaning method of the insulating resin substrate. 6. The method of claim 5,
The first gas is an argon gas, characterized in that the cleaning method of the insulating resin substrate. 3. The method of claim 2,
The second gas is an oxygen gas, wherein the cleaning method of the insulating resin substrate. 3. The method of claim 2,
The method for cleaning an insulating resin substrate, wherein the insulating resin substrate is a polyimide-based insulating water-based substrate. A substrate processing apparatus for cleaning an insulating resin substrate, comprising:
A chamber in which the insulating resin substrate is disposed;
first gas introduction means for introducing a first gas into the chamber;
second gas introduction means for introducing a second gas into the chamber;
cleaning means for cleaning the surface of the insulating resin substrate by irradiating the surface of the insulating resin substrate with an ion beam;
have control means,
The first gas is a gas that generates a physical cleaning action,
The second gas is a gas having an action of generating a chemical cleaning action and restoring the insulation of the insulating resin substrate,
When the control means cleans the surface of the insulating resin substrate in an atmosphere containing at least one of the first gas and the second gas,
performing a first step of scanning the surface of the insulating resin substrate with an ion beam while maintaining the ratio of the first gas to the second gas in an atmosphere in which the ratio of the first gas is higher than that of the second gas;
After the first process, in an atmosphere in which the ratio of the second gas is higher than that of the first gas, while maintaining the ratio of the first gas and the second gas, the surface of the insulating resin substrate is irradiated with an ion beam. to perform a second step of injection,
The substrate processing apparatus according to claim 1, wherein the first and second gas introduction means and the cleaning means are controlled. 10. The method of claim 9,
The control means is configured to configure the first and second gas introduction means such that the ratio of the first gas is gradually decreased and the ratio of the second gas is increased in steps from the start to the end of the cleaning. Controlled substrate processing apparatus. 10. The method of claim 9,
The control means controls the first and second gas introduction means so that the ratio of the second gas at the start of the cleaning becomes 0 and the ratio of the first gas at the end of the cleaning becomes 0 a substrate processing apparatus. 10. The method of claim 9,
The first gas is a noble gas. 13. The method of claim 12,
The first gas is an argon gas, characterized in that the substrate processing apparatus. 10. The method of claim 9,
The second gas is an oxygen gas. 10. The method of claim 9,
The substrate processing apparatus according to claim 1, wherein the insulating resin substrate is a polyimide-based insulating hand-written substrate. delete The substrate processing apparatus according to any one of claims 9 to 15;
and a film-forming unit for performing a film-forming process on the surface of the insulating resin substrate cleaned by the substrate processing apparatus.

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