JP2019119921A - Positioning method of charged object and static electricity removing device - Google Patents

Abstract

To provide a positioning method of a charged object and a static electricity removing device, capable of removing static electricity without reducing a vacuum degree in a chamber, in the same chamber with that in film making processing.SOLUTION: A high vacuum processing mechanism D requiring high vacuum and an electricity removing mechanism S are provided in a chamber 1 which is kept in high vacuum. The electricity removing mechanism S is constituted with a discharge electrode 3 to which voltage is applied, a ground electrode 4 connected to the ground, and a gas supply means for supplying gas G into an electric field E1 formed by the voltage apply discharge electrode 3 and the ground electrode 4, and plasma is generated in the electric field E1. A proper density of the plasma is specified according to a charged amount of the charged object 2, and a position of the charged object 2 is specified with reference of the proper position where an electricity removing object face 2a of the charged object 2 is exposed, in plasma atmosphere in an area A1 in which the proper density is formed.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a method and an apparatus for positioning a charged object, in which charge is eliminated in a space maintaining a high vacuum.

  2. Description of the Related Art Conventionally, in the process of manufacturing a device such as a semiconductor integrated circuit, film formation processes such as thin film formation and fine circuit formation are performed under high vacuum. In the manufacturing process of such a device, a gas exhausting means which is constantly evacuated is connected to the chamber, and the inside of the chamber is kept in a high vacuum state.

A substrate for forming a thin film has a property of being easily electrostatically charged because an insulating material is used. If the substrate is subjected to film formation processing while static electricity is charged, problems such as the formation of a uniform thin film may occur.
Also, devices manufactured based on a substrate are called electrostatic sensitive devices, and are easily damaged by electrostatic charging and discharge resulting therefrom.
In order to solve the above-mentioned problems, in the thin film formation process performed under high vacuum, it is necessary to carry out the static elimination treatment as needed.

As such a charge removal process, a method of generating plasma and removing charge is known. In this method, a discharge electrode applying a high voltage, a ground electrode forming an electric field between the discharge electrode, and gas supply means for supplying a gas into the electric field formed between the discharge electrode and the ground electrode Is provided in the chamber.
When a high voltage is applied to the discharge electrode, the gas in the chamber is ionized to generate plasma. When the surface of the substrate is exposed to plasma, the surface charge of the substrate is discharged to the ground electrode side through the plasma, and the surface of the substrate is destaticized.

However, it has been difficult to use a static eliminator that neutralizes the surface of the substrate with plasma in the same space of a high vacuum chamber that performs the film formation process.
The reason is that almost no plasma is generated under the thin film forming high vacuum. With respect to the high vacuum (10 ^-6 to 10 ^-2 [Pa]) used in the above-mentioned film formation process, in the low vacuum (1 [Pa] or more) which is optimal for the above-mentioned plasma generation There is.

For example, when a gas for plasma generation is introduced into a high vacuum, the gas diffuses into the chamber in a very short time. Therefore, when a large amount of gas is supplied to generate plasma, the degree of vacuum in the chamber is reduced, and the high vacuum state is lost.
In addition, if the gas supply amount is reduced to maintain a high vacuum, the gas diffuses immediately throughout the chamber, and the gas density decreases. If the gas density is reduced, plasma can not be generated, so that it is not possible to perform charge removal using plasma.

Japanese Patent Application Laid-Open No. 2003-051523 Unexamined-Japanese-Patent No. 10-298758

  In the conventional method and apparatus, it has not been possible to simultaneously perform the film forming process requiring a high vacuum and the charge removing process optimum for a low vacuum in the same space of the chamber. This is because the required high vacuum is broken if a large amount of gas is supplied to carry out the charge removal by plasma before, during, or after the film formation process while maintaining the high vacuum state. If the inside of the chamber is in a low vacuum state, the inside of the chamber must be returned to a high vacuum state in order to perform the film forming process again, which causes a problem that the processing efficiency is lowered. .

  An object of the present invention is to provide a method of positioning a charged object and a charge removal apparatus capable of charge removal processing in the same chamber as film formation processing under high vacuum.

According to a first aspect of the present invention, a high vacuum processing mechanism and a charge removal mechanism are provided in the same space of a chamber maintaining a high vacuum. The charge removal mechanism includes a discharge electrode for applying a voltage, a grounded ground electrode, and a gas supply means for supplying a gas for plasma generation between the discharge electrode and the ground electrode.
Further, by supplying the gas in a state where a voltage is applied to the discharge electrode, plasma is generated between the discharge electrode and the ground electrode. It is premised on the static elimination method of discharging the charge of the charged object to the side of the ground electrode through this plasma.

  Then, first, the appropriate density of plasma according to the charge amount of the charged object is specified. Next, an appropriate position for exposing the surface to be neutralized of the charged object in the atmosphere of plasma in the appropriate density area is specified, and the position of the charged object is determined based on the appropriate position. Furthermore, the charge of the charge removal target surface of the charged object is discharged to the ground electrode side through the plasma maintaining the appropriate density, thereby removing the charge of the charged object.

In the present invention, while the applicant repeats the experiment, even under high vacuum, the charge of the charged object is instantaneously eliminated through the plasma by using the plasma of a predetermined density before the plasma is diffused. It is found that the film formation processing is not affected because the charge is eliminated instantaneously.
The appropriate density of the plasma is determined according to the level of high vacuum, the charge amount of the charged object, the required charge removal time, and the like.

  The charge removing device according to the second aspect of the present invention comprises a high vacuum processing mechanism requiring high vacuum such as thin film formation and fine circuit formation on a charged object in the same space of a chamber maintaining high vacuum, and plasma A charge removing mechanism for removing charge from the charged object, and holding means for holding the charged object are provided. The charge removal mechanism includes a discharge electrode for applying a voltage, a grounded ground electrode, and a gas supply means for supplying a gas for plasma generation between the discharge electrode and the ground electrode.

  On the premise of the above configuration, a plasma is generated by the electric field formed between the discharge electrode and the ground electrode and the gas supplied from the gas supply means. Further, the holding means is an appropriate density area where the plasma density necessary to discharge the charge on the surface to be discharged is maintained in the generated plasma, and the charging is performed at the appropriate position where the surface to be discharged is exposed. It is characterized in that it is configured to hold an object.

The charge eliminator of the third invention is characterized in that the chamber, the holding means, or the gas supply means doubles as the ground electrode.
The ground electrode serves to form an electric field with the discharge electrode and to discharge the charge to the ground side.

  In the static elimination device of the fourth invention, the discharge electrode is a mesh electrode, a gas supply means is provided outside the discharge electrode with respect to the charged object, and the gas is supplied through the mesh electrode. It is characterized in that it is configured.

In the first aspect of the invention, since the charge removal target surface is positioned at an appropriate position in the appropriate density area of the plasma, the high density plasma before the plasma is diffused can be used for charge removal.
That is, since the plasma before diffusion can be used for diselectrification in the chamber maintained at a high vacuum, the charge of the charged object can be removed even if the supply amount of the gas for generating plasma is reduced.
Since the total amount of gas supplied into the chamber is reduced, it is possible to prevent the degree of vacuum in the chamber from being lowered.

In addition, since the total amount of gas can be reduced, the gas diffused into the chamber is quickly exhausted through a vacuum pump or the like which maintains a high vacuum. Since the gas is exhausted quickly, the high vacuum necessary for the high vacuum processing mechanism can be maintained.
As described above, since the charge removal can be performed while maintaining the high vacuum in the chamber, the high vacuum processing mechanism and the charge removal mechanism can be provided together in the same space of the chamber.

In the second invention, since the high vacuum processing mechanism and the charge removal mechanism can be provided together in the same space of the chamber, the charge removal can be performed as needed even in the process of processing the charged object.
In addition, since the high vacuum in the chamber is maintained, it does not take time until the inside of the chamber is brought into a high vacuum state again by the vacuum pump after the low vacuum state and the static elimination treatment as in the prior art. That is, the time taken to manufacture the device is significantly reduced.

  According to the third invention, since the electric field is formed between the discharge electrode and the chamber, the holding means, or the gas supply means present around the discharge electrode, the ground electrode is not necessary. Since the ground electrode is not provided in the chamber, the apparatus can be miniaturized.

  According to the fourth invention, since the discharge electrode is a mesh electrode, the gas for plasma generation supplied from the outside of the electrode passes through the mesh electrode to form between the discharge electrode and the ground electrode. Supplied to the electric field formed on the The gas that has passed through the mesh electrode is reliably supplied to the electric field, so that most of the gas that has passed through the mesh electrode can be plasmatized.

It is the model which showed the static elimination apparatus of 1st Embodiment. It is the model which showed the static elimination apparatus of 2nd Embodiment.

As shown in FIG. 1, in the static elimination apparatus of the first embodiment, a high vacuum processing mechanism D for forming a thin film on a substrate incorporating an electronic component of a semiconductor integrated circuit and a plasma in a chamber 1 where high vacuum is maintained. And a charge removing mechanism S for removing charges.
A vacuum pump P is connected to the chamber 1 to constantly evacuate the space of the chamber 1 so that a high vacuum can be maintained. In the space of such a chamber 1, a high vacuum of 10 ⁻⁶ to 10 ⁻² [Pa] is maintained.

In the high vacuum processing mechanism D, for example, sputtering processing is performed.
In the sputtering apparatus (not shown) which is to be the high vacuum processing mechanism D, a target for sputtering and the substrate are held by a holding means in the chamber 1. Then, when the ion beam is irradiated to the target from an ion source provided in the chamber 1, atoms of the target are sputtered, and the atoms are attached to the surface of the substrate to form a thin film.

Next, the static elimination mechanism S provided in the same space as the high vacuum processing mechanism D will be described.
The charge removing mechanism S provided in the chamber 1 includes a discharge electrode 3 for applying a voltage, a ground electrode 4 for forming an electric field E1 between the discharge electrode 3, and a space between the discharge electrode 3 and the ground electrode 4. And the gas supply means for supplying the gas G.

  The discharge electrode 3 has its tip pointed and is supported on the side wall of the chamber 1 via a support means made of an insulator (not shown). The discharge electrode 3 is connected to a power source 5 outside the chamber 1 by a conductor covered with an insulator. Furthermore, the power supply 5 is connected to ground.

A high voltage from a power source 5 is applied to the discharge electrode 3. The power supply 5 is a direct current power supply and continues to output the voltage of the negative electrode.
Although the power supply 5 applies the voltage of the negative electrode, the voltage of the positive electrode may be used. Although the power supply 5 is described as a DC power supply, an AC power supply may be used.

  Furthermore, in the chamber 1, a plate-like ground electrode 4 is provided at a position facing the discharge electrode 3. The ground electrode 4 is fixed to the chamber 1 via a support means (not shown). The ground electrode 4 is grounded by a conductor covered with an insulator.

  The ground electrode 4 is provided to form an electric field E1 with the discharge electrode 3 to which a high voltage is applied. However, within the chamber maintained at high vacuum, no discharge occurs even if a high voltage is applied to the discharge electrode 3. The reason is that since the inside of the chamber 1 is in a high vacuum state, there is no gas G to such an extent that a plasma is generated, and an electrical substantially insulating state is achieved.

A gas nozzle 6 for supplying a gas G to an electric field E1 formed between the discharge electrode 3 and the ground electrode 4 is provided on the side wall of the chamber 1. And the jet nozzle 6a of the said gas nozzle 6 is turned to the said electric field E1.
Furthermore, a gas supply source for plasma generation (not shown) is connected to the gas nozzle 6 through a valve V provided outside the chamber 1. The valve V is connected to a valve control unit 7 for controlling the opening and closing of the valve V.

In the first embodiment, the gas supply means of the present invention is constituted by the gas nozzle 6, the valve V, the valve control unit 7 and a gas supply source not shown.
Although air or nitrogen gas is mainly used as the gas G, it is sufficient to select the optimum gas G as needed, and the type of gas is not limited.

  The valve control unit 7 controls the valve V to be momentarily opened to supply the gas G. When the gas G is instantaneously ejected from the ejection port 6a via the valve V, the gas G is locally supplied to the space in which the electric field E1 is formed.

When the gas G is supplied locally to the space in which the electric field E1 is formed, a plasma is generated, but the plasma density is determined according to the correlation between the strength of the electric field E1 and the concentration of the gas G .
However, in the chamber 1 where high vacuum is maintained, the generated plasma diffuses into the chamber 1 in a very short time, but the plasma density is still high near the jet nozzle 6 a of the gas nozzle 6 The further away from the jet nozzle 6a, the lower the plasma density.

The holding means for holding the charged object 2 includes a holding plate 8 for fixing the position of the charged object 2 and a moving mechanism (not shown) for moving the holding plate 8. Can be transported into and out of the chamber 1.
As the moving mechanism, for example, a hand of a robot arm or the like is typical.

In such a static eliminator, the position of the charged object 2 is determined as follows.
First, the charge amount of the charge removal target surface 2 a of the charged object 2 is measured by a surface potentiometer (not shown) or the like.

Next, the appropriate density of plasma according to the measured charge amount of the charged object 2 is specified. The appropriate density of the plasma is obtained from the plasma density necessary to discharge the charge amount of the surface 2a to be discharged.
Therefore, the appropriate density of plasma is specified according to the charge amount of the charge removal target surface 2a, the diffusion rate of plasma, and the required charge removal processing time.

For example, the higher the plasma density, the more the charged charge per unit time can be discharged. However, since the density of the plasma also depends on the gas concentration, it is necessary to determine the appropriate density in the process of dilution of the plasma in consideration of the degree of vacuum in the chamber 1, that is, the diffusion rate of the gas G. .
The plasma density measurement apparatus may be used to specify the appropriate density of plasma, or simulation may be repeated using a charged sample.

  The plasma density largely varies depending on the distance between the jet nozzle 6 a and the surface 2 a of the object 2 to be neutralized under the high vacuum as described above. Since the gas G is supplied instantaneously and locally from the nozzle under high vacuum, the plasma density becomes high near the jet 6a, while the plasma diffuses into the chamber 1 with the passage of time and the density becomes It will be diluted. Therefore, the plasma density is also different depending on the distance between the jet nozzle 6 a and the surface 2 a of the charge object 2 to be neutralized. Therefore, the appropriate density of plasma also depends on the distance from the jet 6 a to the charged object 2.

  As described above, when the appropriate density of plasma is specified, an appropriate position for exposing the charge removal target surface 2 a of the charged object 2 in the atmosphere of plasma maintaining the appropriate density is determined. An atmosphere of an appropriate density in which such an appropriate density of plasma is formed is referred to as an appropriate density area A1.

The area A1 only needs to generate the minimum plasma necessary for the charge removal, so the charge object 2 is removed by holding the charge object 2 in a high density plasma atmosphere before the plasma is diffused. be able to.
The charged object 2 is held at the proper position by the moving mechanism.

Next, the operation of the above-mentioned charge removal apparatus will be described.
In the chamber 1, a high vacuum processable by the high vacuum processing mechanism D is maintained by the vacuum pump P. In addition, the charged object 2 is held by the holding plate 8 in the chamber 1. Since the holding plate 8 is movable by a moving mechanism (not shown), the position of the charge removal target surface 2 a of the charged object 2 in the chamber 1 can be freely specified.

The moving mechanism moves the charge removal target surface 2a of the charged object 2 to a predetermined position within the appropriate density area A1 where plasma is generated.
Then, while the high voltage is applied to the discharge electrode 3, the valve V is momentarily opened by the valve control unit 7 to instantaneously and locally generate the gas G for plasma generation with a constant concentration. Supply.

When the gas G is supplied instantaneously and locally from the gas nozzle 6, an atmosphere capable of generating plasma instantaneously and locally is formed in the space where the electric field E1 is formed.
Then, plasma is generated by the gas G and the electric field E1. The generated plasma diffuses into the chamber 1 with the passage of time, so the plasma density optimum for the charge removal before the diffusion is used for the charge removal.

In addition, it is generally said that the low vacuum state of 1 to 10 ⁺² [Pa] is preferable for the generation of plasma. Therefore, in the area A1, the degree of vacuum optimum for plasma generation is determined instantaneously and locally by repeating simulation etc., and the plasma of the appropriate density according to the charge amount of the charged object 2 is specified. It is like that.

In the first embodiment, the charge removal target surface 2 a of the charged object 2 is a high density plasma before diffusion, and is exposed to a plasma of an appropriate density optimum for the charge removal.
The charge of the target surface 2a of the static elimination target exposed to the plasma is discharged to the side of the ground electrode 4 through the plasma having the conductive characteristic.
The ground electrode 4 for discharging the charge may be grounded, so the chamber 1 which is grounded may be used as the ground electrode.

  Since the space in the chamber 1 is constantly evacuated by the vacuum pump P during the above-described charge removal process, a small amount of gas G diffused into the chamber 1 is immediately evacuated.

In the first embodiment, since the high-density plasma before diffusing into the chamber 1 is used for the static elimination process, the total amount of the gas G for generating the plasma can be small. Therefore, since the total amount of gas G can be reduced, a high vacuum in the chamber 1 can be maintained.
The charged object 2 destaticized as described above is transported to the high vacuum processing mechanism D area by the moving mechanism.

In the first embodiment, since the charge removal target surface is positioned at an appropriate position in the appropriate density area A1 of plasma, it is possible to use high density plasma before the plasma is diffused.
That is, in the chamber 1 kept at high vacuum, the plasma before diffusion can be used for diselectrification, so the charge of the charged object 2 can be discharged even if the supply amount of the gas G for generating plasma is reduced.
Thus, the total amount of gas G supplied into the chamber 1 can be reduced, so that the degree of vacuum in the entire chamber 1 can be prevented from decreasing.

In addition, since the total amount of the gas G can be reduced, the gas G diffused in the chamber 1 is quickly exhausted through the vacuum pump P or the like which maintains a high vacuum. Since the gas G is quickly exhausted, the high vacuum necessary for the high vacuum processing mechanism D can be maintained.
As described above, since the charge removal can be performed while maintaining the high vacuum in the chamber 1, the high vacuum processing mechanism D and the charge removal mechanism S can be provided together in the same space of the chamber 1.

As described above, even if the high vacuum processing mechanism D and the charge removal mechanism S are provided together in the same space of the chamber 1, the high vacuum can be removed without breaking the high vacuum.
Furthermore, since the high vacuum in the chamber 1 is maintained, the time for returning from the low vacuum to the high vacuum can be shortened, and for example, the time required for the film forming process can be shortened.

In the first embodiment, a sputtering apparatus is described as the high vacuum processing mechanism D. However, for example, if it is necessary to perform static elimination under high vacuum, such as a vacuum deposition apparatus or a CVD processing apparatus, how Processing devices can also be used.
Further, in the first embodiment, the hand of the robot arm has been described as an example of the moving mechanism, but another moving mechanism can be used. For example, a belt conveyor can be used as a moving mechanism.

  Furthermore, although the ground electrode 4 is provided and described in the first embodiment, the side wall of the chamber 1 may be used as the ground electrode, for example, by omitting the ground electrode 4. In such a case, an electric field E1 is formed between the discharge electrode 3 and the side wall of the chamber 1. Since the ground electrode only needs to have a potential difference with the discharge electrode 3, the gas nozzle 6 or the like disposed in the vicinity of the discharge electrode 3 other than the chamber 1 may be used as the ground electrode.

Further, in the first embodiment, the discharge electrode 3 used was an electrode having a sharpened tip, but various types of electrodes such as a plate, a wire, and a mesh can be used.
And, in this first embodiment, it is possible to discharge electricity as needed in the device manufacturing process. By reciprocating the high vacuum processing mechanism D and the charge removal mechanism S by the moving mechanism, the charge removal processing can be performed as needed.

Next, a second embodiment will be described using FIG.
The second embodiment is characterized in that the holding plate 9 holding the charged object 2 is grounded, and the jet port 11a of the gas nozzle 11 is directed to the electric field E2 from the outside of the mesh-like discharge electrode 10. There is. The other configuration is the same as that of the first embodiment, and the same reference numerals are used for the same components as the first embodiment.

  In the second embodiment, the discharge electrode 10 is formed of a mesh electrode knitted in a lattice shape, and is supported on the side wall of the chamber 1 by a support means made of an insulator (not shown). The discharge electrode 10 is connected to a power source 5 outside the chamber 1 by a conductor covered with an insulator.

The holding plate 9 of the holding means is provided to face the discharge electrode 10, and the holding plate 9 is disposed in parallel with the discharge electrode 10. The holding plate 9 is supported by a moving mechanism (not shown), and can reciprocate between the high vacuum processing mechanism D and the charge removing mechanism S.
The charged object 2 is fixed to the side of the discharge electrode 10 in the holding plate 9 by a claw portion (not shown). The holding plate 9 is electrically conductive and has a larger area than the charged object 2. When the charged object 2 is superimposed on the holding plate 9, the holding plate 9 is provided so as to protrude from the outer periphery of the charged object 2.

  In the second embodiment, an electric field E2 is formed by the discharge electrode 10 and the holding plate 9 holding the charged object 2. Thus, in the second embodiment, the holding plate 9 also serves as the ground electrode.

  Further, a gas nozzle 11 is provided on the side wall of the chamber 1 outside the discharge electrode 10 with respect to the charged object 2. The gas nozzle 11 is directed to an electric field E2 whose jet port 11a is formed between the discharge electrode 10 and the holding plate 9. The gas G ejected from the ejection port 11 a passes through the mesh-like discharge electrode 10 and is supplied to the electric field E2.

  The other configuration is the same as that of the first embodiment, but the inside of the chamber 1 is constantly evacuated by a vacuum pump P so that a high vacuum can be maintained as a whole. The positioning of the charged object 2 is also similar to that of the first embodiment.

  In such an apparatus, when a high voltage is applied to the discharge electrode 10, an electric field E2 is formed between the opposed holding plate 9. When the gas G for plasma generation is passed through the mesh electrode of the discharge electrode 10 and supplied into the electric field E2, plasma is generated by the electric field E2 and the gas G. In the area A2 shown in FIG. 2, plasma of an appropriate density corresponding to the charge amount of the charged object 2 is formed instantaneously and locally.

The plasma spreads in the ejection direction of the gas G ejected from the ejection port 11 a and collides with the charge removal target surface 2 a of the charged object 2. At that time, the charge removal target surface 2a of the charged object 2 is exposed to plasma of an appropriate density.
At the same time, the holding plate 9 also serving as the ground electrode is exposed to the plasma. When the holding plate 9 is exposed to plasma, the charge of the charge removal target surface 2a of the charged object 2 flows to the holding plate 9 through the plasma, and the charged object 2 is removed.

According to the second embodiment, since the electric field E2 for generating plasma is formed between the discharge electrode 10 and the holding plate 9 of the holding means, the ground electrode provided in the first embodiment is used. Because of the omission, the device is miniaturized.
Further, since the discharge electrode 10 is a mesh electrode, the gas G for plasma generation supplied from the outside of the electrode passes through the mesh electrode, and the discharge electrode 10 and the holding plate 9 serving as the ground electrode It is supplied to the electric field E2 formed between. The gas G that has passed through the mesh electrode is reliably supplied to the electric field E2, so that most of the gas G that has passed through the mesh electrode can be plasmatized.

Although the charge removal device according to the first and second embodiments is configured to remove only the charge removal target surface 2 a of the charged object 2, both surfaces of the charged object 2 may be removed simultaneously. In such a case, both sides to be treated may be provided to be exposed to plasma.
The arrangement of the discharge electrode, the ground electrode and the gas nozzle of this device, the applied voltage, the supply amount and the supply time of the gas G for plasma generation, and the like can be set according to the size and type of the charged object 2 and the charge removal purpose.

  The present invention can be applied to charge removal of a charged object in the same chamber as a film formation process that requires a high vacuum.

DESCRIPTION OF SYMBOLS 1 ... Chamber, 2 ... charged object, 3, 10 ... Discharge electrode, 4 ... Ground electrode, 5 ... Power supply, 6, 11 ... Gas nozzle, 7 ... Valve control part, D ... High vacuum processing mechanism, S .. , E2 ... electric field, V ... valve

Claims (4)

A high vacuum processing mechanism and a charge removal mechanism are provided in the same space of the chamber maintaining a high vacuum,
The charge removal mechanism comprises a discharge electrode for applying a voltage;
A grounded electrode, and
A gas supply means for supplying a gas for plasma generation between the discharge electrode and the ground electrode;
By supplying the gas while the voltage is applied to the discharge electrode, plasma is generated between the discharge electrode and the ground electrode,
A method of discharging electricity from a charged object to the side of the ground electrode through the plasma,
A process of specifying an appropriate density of plasma according to the charge amount of the charged object;
A process of identifying an appropriate position for exposing the surface to be neutralized of the charged object in the atmosphere of plasma in the appropriate density area;
A process of specifying the position of the charged object with reference to the proper position;
And a process of discharging the charge of the charge removal target surface of the charged object to the ground electrode side through the plasma maintaining the appropriate density. In the same space of the chamber maintaining high vacuum,
High vacuum processing mechanism that requires high vacuum such as thin film formation and fine circuit formation on charged object,
A charge removing mechanism that generates plasma to discharge the charge target surface of the charged object;
Holding means for holding the charged object,
The charge removal mechanism comprises a discharge electrode for applying a voltage;
A ground electrode connected to ground,
A gas supply means for supplying a gas for plasma generation between the discharge electrode and the ground electrode;
While an electric field formed between the discharge electrode and the ground electrode and a gas supplied from the gas supply means generate plasma,
The holding means is an appropriate density area in which the plasma density necessary to discharge the charge of the charge removal target surface in the generated plasma is maintained, and the charged object is at an appropriate position where the charge removal target surface is exposed. A static eliminator configured to keep the   The static elimination device according to claim 2, wherein the chamber or the holding means or the gas supply means doubles as the ground electrode.   4. The apparatus according to claim 2, wherein the discharge electrode is a mesh electrode, a gas supply means is provided outside the discharge electrode with respect to the charged object, and the gas is supplied through the mesh electrode. Description of the charge removal device.

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