JPS59170270A - Apparatus for forming film - Google Patents

Apparatus for forming film

Info

Publication number
JPS59170270A
JPS59170270A JP4259983A JP4259983A JPS59170270A JP S59170270 A JPS59170270 A JP S59170270A JP 4259983 A JP4259983 A JP 4259983A JP 4259983 A JP4259983 A JP 4259983A JP S59170270 A JPS59170270 A JP S59170270A
Authority
JP
Japan
Prior art keywords
substrate
thin film
particles
ion gun
substrate holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4259983A
Other languages
Japanese (ja)
Inventor
Katsuya Okumura
勝弥 奥村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP4259983A priority Critical patent/JPS59170270A/en
Publication of JPS59170270A publication Critical patent/JPS59170270A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To improve film formation on the edge part of a semiconductor substrate with the titled apparatus by combining the 1st ion gun for applying sputtered particles to the substrate on a substrate holder through a target with the 2nd ion gun for etching the deposited particles. CONSTITUTION:Argon particles 16 emitted from the 1st ion gun 14 collide against a target 12 and reach a substrate 11 on a substrate holder 10 as reflected sputtered particles 7, forming a thin film 13. Argon particles 19 emitted from the 2nd ion gun 18 also reach the substrate 11. Film formation on the edge part of the surface of the substrate 11 is improved by the argon particles 19, and fracture is perfectly prevented. Argon particles may be applied alternately from the guns 14, 18 to the substrate 11 attached to a rotating substrate holder.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、膜形成装置に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a film forming apparatus.

〔発明の技術的背景〕[Technical background of the invention]

従来、半導体基板の表面に所望の薄膜が形成されている
。而して、従来の膜形成装置は、真空蒸着法やスパッタ
リング法にょシ薄膜の形成を行っている。また、膜厚の
均一な薄膜を形成するために、薄膜の堆積中に基板を加
熱する技術手段が採用されている。Conventionally, a desired thin film has been formed on the surface of a semiconductor substrate. Conventional film forming apparatuses use vacuum evaporation or sputtering to form thin films. Additionally, in order to form thin films with uniform thickness, technical means are employed to heat the substrate during the deposition of the thin film.

〔背景技術の問題点〕[Problems with background technology]

しかしながら、第１図に示す如く、薄膜１の形成される
半導体基板２の表面は、素子の微細化に伴って多数の凹
凸部３を有する。このため、薄膜１の形成時に半導体基
板２を加熱しても、凹凸部３にて形成される段差のとこ
ろで、膜厚が極めて薄くなったシ、著しい場合には切断
される。However, as shown in FIG. 1, the surface of the semiconductor substrate 2 on which the thin film 1 is formed has a large number of uneven portions 3 due to miniaturization of elements. Therefore, even if the semiconductor substrate 2 is heated during the formation of the thin film 1, the film thickness becomes extremely thin at the steps formed by the uneven portions 3, and in severe cases, the film is cut.

このように凹凸部３を有する半導体基板２の表面に、所
望の薄膜１を良好なステッゾ力バレイノの下に形成でき
ない。その結果、高品質の半導体装置を提供できガい問
題があった。As described above, it is not possible to form the desired thin film 1 on the surface of the semiconductor substrate 2 having the uneven portions 3 under a good Stezzo force. As a result, there was a problem in that it was difficult to provide high quality semiconductor devices.

〔発明の目的〕[Purpose of the invention]

本発明は、基板の表面に良好なステｙｆ力バレイジで所
定の薄膜を形成して高品質の半導体装置を得ることがで
きる膜形成装置を提供することをその目的とするもので
ある。An object of the present invention is to provide a film forming apparatus capable of forming a predetermined thin film on the surface of a substrate with good stay-f force radiation to obtain a high quality semiconductor device.

〔発明の概要〕[Summary of the invention]

本発明は、同一工程で薄膜の堆積及びエツチング処理を
施す機構を設けたことにより、基板の表面に良好なステ
ップ力バレイジで所定の薄膜を形成して、高品質の半導
体装置を得ることができる膜形成装置でおる。By providing a mechanism for depositing and etching a thin film in the same process, the present invention makes it possible to form a predetermined thin film on the surface of a substrate with good step force coverage and obtain a high quality semiconductor device. Use a film forming device.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の実施例について図面を参照して説明する
。Embodiments of the present invention will be described below with reference to the drawings.

第２図は、本発明の一実施例の概略構成を示す説明図で
ある。図中１０は、薄膜１３が形成される半導体基板１
ノを保持する基板ホルダーである。基板ホルダー１０の
前方には、基板ホルダー１０の前方には、基板ホルダー
１ｏ上の半導体基板１ノに対向するようにして、ターゲ
ット１２が設けられている。ターゲット１２は、形成す
る薄膜１３と同じ材質、例えばアルミニウムで形成され
ている。ターゲット１２の前方には、これと対向して第
１イオン銃１４が設けられている。第１イオン銃１４は
、例えばアルゴンイオンのような粒子１６をターゲット
１２の表面に照射して、ターゲット１２の表面から半導
体基板１ノの表面にスパッター粒子１７を放出させるよ
うになっている。また、基板ホルダー１０の前方には、
基板ホルダー１ｏ上の半導体基板１ノに対向するように
して、第２イオン銃１８が設けられている。第２イオン
銃１８は、例えばアルゴンイオンのような粒子１９を半
導体基板１１の表面に照射して、半導体基板表面に堆積
した薄膜１３をエツチングするようになっている。FIG. 2 is an explanatory diagram showing a schematic configuration of an embodiment of the present invention. In the figure, 10 is a semiconductor substrate 1 on which a thin film 13 is formed.
This is a board holder that holds the board. A target 12 is provided in front of the substrate holder 10 so as to face the semiconductor substrate 1 on the substrate holder 1o. The target 12 is made of the same material as the thin film 13 to be formed, for example, aluminum. A first ion gun 14 is provided in front of the target 12 and facing it. The first ion gun 14 is configured to irradiate the surface of the target 12 with particles 16 such as, for example, argon ions, and release sputtered particles 17 from the surface of the target 12 onto the surface of the semiconductor substrate 1 . In addition, in front of the substrate holder 10,
A second ion gun 18 is provided so as to face the semiconductor substrate 1 on the substrate holder 1o. The second ion gun 18 is configured to irradiate the surface of the semiconductor substrate 11 with particles 19, such as argon ions, to etch the thin film 13 deposited on the surface of the semiconductor substrate.

このように構成された膜形成装置２ｏは、第１イオン銃
１４から放出された粒子ノロが、ターゲット１２に衝突
してスパッター粒子１７を叩き出す。スパッター粒子１
２は、半導体基板１１の表面に付着して薄膜１３を堆積
する。一方、この堆積処理と併行して第２イオン銃１８
からエツチング用の粒子１９が、半導体基板１１の表面
に向けて放出される。このため、半導体基板１１の表面
では、スフ４ツター粒子１７による薄膜１３の堆積処理
と、エツチング用の粒子１９によるこの薄膜１３のエン
チング処理とが同時に行われる、ここで、スパッター粒
子１７による薄膜１３の堆積速度を、エツチング用の粒
子１９によるエツチング速度よシも大きく設定しておく
と、半導体基板１１の表面では、凸部１１ａで凹部１１
ｂよりも早い速度で薄膜１３のエツチング処理が進行す
ることになる。In the film forming apparatus 2o configured in this manner, particle slag emitted from the first ion gun 14 collides with the target 12 and knocks out sputter particles 17. Sputtered particles 1
2 adheres to the surface of the semiconductor substrate 11 to deposit a thin film 13. Meanwhile, in parallel with this deposition process, the second ion gun 18
Etching particles 19 are emitted toward the surface of the semiconductor substrate 11 from above. Therefore, on the surface of the semiconductor substrate 11, the deposition process of the thin film 13 using the sputtered particles 17 and the etching process of this thin film 13 using the etching particles 19 are performed simultaneously. If the deposition rate of etching is set higher than the etching rate of the etching particles 19, on the surface of the semiconductor substrate 11, the convex portions 11a overlap the concave portions 11.
The etching process of the thin film 13 will proceed at a faster rate than b.

しかも、凸部１１ａでスパッタリングされた粒子は、半
導体基板１ノの表面に再付着する。このため、薄膜１３
の膜厚は、凹凸部１１ｂ・１１ａの段差を次第に小さく
するように、段差部で局部的に増大する。その結果、所
定の処理時間後には、第３図に示す如く、凹凸部１１ｂ
１１１ａを有する半導体基板１１の表面に、極めご良好
なステンプカバレイ・ゾの下に均一な膜厚の薄膜１３を
形成することができる。Moreover, the particles sputtered by the convex portions 11a re-adhere to the surface of the semiconductor substrate 1. For this reason, the thin film 13
The film thickness locally increases at the step portion so that the step difference between the uneven portions 11b and 11a becomes gradually smaller. As a result, after a predetermined processing time, as shown in FIG.
A thin film 13 having a uniform thickness can be formed on the surface of the semiconductor substrate 11 having the semiconductor substrate 111a under an extremely good stamp cover layer.

なお、実施例の膜形成装置２０の他にも、第４図に示す
如く、基板ホルダー１０’に、回転モータ２１を取付け
ると共に、薄膜１３の堆積用のスパッター粒子１７の照
射を受ける半導体基板１１′を保持する領域と、堆積さ
れた薄膜１３をエツチングするイオン粒子１９の照射を
受ける半導体基板１１“を保持する領域とを設けたもの
を採用した膜形成装置２０’としても良い。この膜形成
装置２０′では、２枚の半導体基板１１′。In addition to the film forming apparatus 20 of the embodiment, as shown in FIG. The film forming apparatus 20' may have a region for holding the semiconductor substrate 11" and a region for holding the semiconductor substrate 11" which is irradiated with ion particles 19 for etching the deposited thin film 13. In the device 20', two semiconductor substrates 11'.

１１”の夫々に、薄膜１３の堆積とエツチングとが別々
に行われ、所定の処理時間後に基板ホルダー１０’を回
転して各々の半導体基板１１′。Deposition and etching of the thin film 13 are performed separately on each of the semiconductor substrates 11'', and after a predetermined processing time, the substrate holder 10' is rotated to separate the semiconductor substrates 11'.

１ノ“で堆積処理とエツチング処理が交互に行われる。Deposition processing and etching processing are performed alternately in one step.

この操作の繰返しによって、凹凸部１１ｂ。By repeating this operation, the uneven portion 11b is formed.

１１ａを有する半導体基板１１’　、　１１“の表面に
良好なステップ力バレイジで、均一な膜厚の薄膜１３を
形成することができる。The thin film 13 having a uniform thickness can be formed on the surface of the semiconductor substrate 11', 11'' having the semiconductor substrate 11a with good step force rayage.

また、ターゲットを例えばシリコンの如く、堆積する薄
膜を形成する元素の一部の元素で構成し、ターゲットの
周囲をＯイオンや０２雰囲気で囲んでターダノト部とす
ることによシ、所謂化成ス・ゼソターによって所望の元
素からなる薄膜を基板上に形成するようにしても良い。In addition, by forming the target with some of the elements that form the thin film to be deposited, such as silicon, and surrounding the target with an O ion or O2 atmosphere to form a tertiary node, the so-called chemical conversion film can be formed. A thin film made of a desired element may be formed on the substrate using a zesotar.

〔発明の効果〕〔Effect of the invention〕

以上説明した如く、本発明に係る膜形成装置によれば、
基板の表面に良好なステソグカバレイジで所定の薄膜を
形成して＾品質の半導体装置を容易に得ることができる
ものである。As explained above, according to the film forming apparatus according to the present invention,
By forming a predetermined thin film on the surface of a substrate with good stenographic coverage, a high quality semiconductor device can be easily obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は、従来の膜形成装置にて形成はれた薄膜の状態
を示す断面図、第２図は、本発明の一実施例の概略構成
を示す説明図、第３図は、同実施例の装置にて形成され
た薄膜の断面図、第４図は、本発明の他の実施例の概略
構成を示す説明図である。 １０・・・基板ホルダー、１１．１１’、１１″・・・
半導体基板、１　’１　ａ・・・凸部、ｌｌｂ・・・凹
部、１２・・・ターゲット、１３・・・薄膜、１４・・
・第１イオン銃、１６・・・粒子、１７・・・スパッタ
ー粒子、１８・・・第２イオン銃、１９・・・粒子、２
０．２０’・・・薄膜形成装置、２１・・・回転モータ
。 出願人代理人　　弁理士　鈴　江　武　彦号１１図 矛２図 ：ＪＰ３図FIG. 1 is a sectional view showing the state of a thin film formed by a conventional film forming apparatus, FIG. 2 is an explanatory diagram showing a schematic configuration of an embodiment of the present invention, and FIG. FIG. 4, which is a sectional view of a thin film formed by the apparatus of the example, is an explanatory diagram showing a schematic configuration of another example of the present invention. 10... Board holder, 11.11', 11''...
Semiconductor substrate, 1 '1 a...Convex portion, llb...Concave portion, 12...Target, 13...Thin film, 14...
・First ion gun, 16... Particle, 17... Sputtered particle, 18... Second ion gun, 19... Particle, 2
0.20'... Thin film forming device, 21... Rotating motor. Applicant's agent Patent attorney Takehiko Suzue No. 11 Figure 2: JP Figure 3

Claims (2)

【特許請求の範囲】[Claims] （１）薄膜形成用の基板を保持する基板ホルダーと、該
基板ホルダー上の基板に対向して設けられた薄膜形成部
材を供給するターゲット部と、該ターゲット部に対向し
て設けられ該ターゲット部に向けてス・セッター粒子放
出用のイオンを照射する第１イオン銃と、前記基板ホル
ダー上の前記基板に対向して設けられ、エツチング用の
イオンを放出する第２イオン銃とを具備することを特徴
とする膜形成装置。(1) A substrate holder that holds a substrate for forming a thin film, a target section that is provided facing the substrate on the substrate holder and supplies the thin film forming member, and a target section that is provided opposite the target section. a first ion gun that irradiates ions for emitting etching particles toward the substrate holder; and a second ion gun that is provided opposite to the substrate on the substrate holder and emits etching ions. A film forming device characterized by: （２）基板ホルダーが回転自在に設けられており、該基
板ホルダーには、堆積用のスパッター粒子の照射を受け
る基板の保持領域と、エツチング用のイオンの照射を受
ける基板保持領域とが各々独立して形成されている称許
請求の範囲第１項記載の膜形成装置。(2) A substrate holder is rotatably provided, and the substrate holder has an independent substrate holding area that is irradiated with sputtered particles for deposition and a substrate holding area that is irradiated with ions for etching. A film forming apparatus according to claim 1, which is formed by:
JP4259983A 1983-03-15 1983-03-15 Apparatus for forming film Pending JPS59170270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4259983A JPS59170270A (en) 1983-03-15 1983-03-15 Apparatus for forming film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4259983A JPS59170270A (en) 1983-03-15 1983-03-15 Apparatus for forming film

Publications (1)

Publication Number Publication Date
JPS59170270A true JPS59170270A (en) 1984-09-26

Family

ID=12640513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4259983A Pending JPS59170270A (en) 1983-03-15 1983-03-15 Apparatus for forming film

Country Status (1)

Country Link
JP (1) JPS59170270A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0177115A1 (en) * 1984-09-04 1986-04-09 The Standard Oil Company Dual ion beam deposition of amorphous semiconductor films
JPS6196721A (en) * 1984-10-17 1986-05-15 Agency Of Ind Science & Technol Film forming method
JPS61210190A (en) * 1985-03-14 1986-09-18 Nippon Denso Co Ltd Thin film forming device
JPS6261315A (en) * 1985-09-11 1987-03-18 Sharp Corp Molecular beam epitaxy device
WO1987002713A1 (en) * 1985-10-31 1987-05-07 Ncr Corporation A method for forming an abrasion resistant coating on a transparent substrate
JPS63255356A (en) * 1987-04-10 1988-10-21 Canon Electronics Inc Formation of thin film
US4874493A (en) * 1988-03-28 1989-10-17 Microelectronics And Computer Technology Corporation Method of deposition of metal into cavities on a substrate
JP2021088733A (en) * 2019-12-02 2021-06-10 キヤノントッキ株式会社 Film deposition method and film deposition apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50105550A (en) * 1973-12-11 1975-08-20
JPS5825475A (en) * 1981-08-05 1983-02-15 Nec Corp Sputtering device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50105550A (en) * 1973-12-11 1975-08-20
JPS5825475A (en) * 1981-08-05 1983-02-15 Nec Corp Sputtering device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0177115A1 (en) * 1984-09-04 1986-04-09 The Standard Oil Company Dual ion beam deposition of amorphous semiconductor films
JPS6196721A (en) * 1984-10-17 1986-05-15 Agency Of Ind Science & Technol Film forming method
JPS61210190A (en) * 1985-03-14 1986-09-18 Nippon Denso Co Ltd Thin film forming device
JPH0559985B2 (en) * 1985-03-14 1993-09-01 Nippon Denso Co
JPS6261315A (en) * 1985-09-11 1987-03-18 Sharp Corp Molecular beam epitaxy device
WO1987002713A1 (en) * 1985-10-31 1987-05-07 Ncr Corporation A method for forming an abrasion resistant coating on a transparent substrate
JPS63255356A (en) * 1987-04-10 1988-10-21 Canon Electronics Inc Formation of thin film
US4874493A (en) * 1988-03-28 1989-10-17 Microelectronics And Computer Technology Corporation Method of deposition of metal into cavities on a substrate
JP2021088733A (en) * 2019-12-02 2021-06-10 キヤノントッキ株式会社 Film deposition method and film deposition apparatus

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