JPH09213634A - Thin film-forming method manufacture of semiconductor device and thin film-forming device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enable a thin film material source smaller than a base substance to be applicable thereby making a small chamber capacity serve the purpose by relatively shifting the special position of thin film material particle flow and the base substance, while irradiating a partial region of the base substance with the thin film material particles. SOLUTION: A thin film forming device 10 is provided with a gas leading part 12 for introducing gas into a chamber 11, a gas exhaust part 13 for exhausting gas from the chamber 11 and a cathode 14. The thin film forming device 10 arranged between a target 15 corresponding to a thin film material source and a supporting base 19 is also provided with a shield board 17 for ejecting the thin film material particles to a partial region of a base substance. In such a constitution, a rotary axle 19A extends from the lower part of the supporting base 19 to be engaged with a turning means made of a motor and a gear thereby turning the supporting base 19. Here, the rotary axle 19A and the turning means fill the role the role of a shifting means for relatively shifting the thin film material source and the base substance.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to a thin film forming method for irradiating a substrate with thin film raw material particles produced by physical vapor deposition to form a thin film on the substrate, and a thin film forming method. The present invention relates to a method for manufacturing a semiconductor device, and a thin film deposition apparatus suitable for carrying out such a thin film deposition method.

[0002]

2. Description of the Related Art For example, in order to manufacture a semiconductor device,
It is necessary to form various thin films in the manufacturing process. As a film forming method, a chemical vapor deposition method (CVD method)
Another example is a method of spraying or irradiating particles containing a physically desired thin film component. Among the latter methods, a method of physically irradiating the surface of the substrate with thin film raw material particles such as vacuum deposition method, sputtering method, ion plating method, etc.
In the case of manufacturing a semiconductor device using a VD (Physical Vapor Deposition) method, conventionally, a batch method has been adopted in which a plurality of silicon wafers corresponding to a substrate are arranged in a chamber of a thin film forming apparatus and formed simultaneously.

By the way, as semiconductor devices have become highly integrated, miniaturized, and silicon wafers have become larger in diameter, the uniformity of the film thickness and film quality within the surface of the silicon wafer has improved, and the film thickness and film quality of each silicon wafer has improved. Is an important issue. However, in the batch method, it is not possible to obtain uniform film thickness and film quality for each silicon wafer, and nowadays, the single wafer method in which film formation is performed for each silicon wafer in the chamber is predominant.

FIG. 11 shows the structure of a conventional sputtering apparatus. An inert gas or a reactive gas such as N ₂ or O _{2 is} introduced into the chamber 11 evacuated by a vacuum from the gas introduction part 12 and discharged from the gas discharge part 13. A target 15 made of, for example, a metal, which is a raw material of a thin film to be formed, is used as a cathode 14, and a DC voltage is applied to the target 15 to generate plasma 16. The positive ions of this plasma 16 are the target 1
As a result of colliding with 5, the metal particles fly out from the target 15. The metal particles scatter on the surface of the base 20 placed on the support 19, and as a result, a thin film 21 made of a desired metal is formed on the base 20. The positions of the plasma 16, the target 15 and the substrate 20 are usually fixed, and the size of the target 15 is the same as or larger than the size of the substrate 20 (for example, a silicon wafer). In the figure, solid arrows indicate metal particles (thin film raw material particles).
Is schematically represented. On the other hand, a dotted arrow schematically represents process gas ions (for example, Ar ⁺ ) in plasma.
The same applies to the following.

[0005]

In such a single-wafer type apparatus, improvement in the uniformity of film thickness and film quality within the surface of a silicon wafer has been promoted so far. There is a limit to the increase in the size of the thin film deposition apparatus itself due to the increase in size. Currently, the size of silicon wafer is 15 cm
(6 inches) or 20 cm (8 inches) is the mainstream, but it is expected to become 30 cm (12 inches) or more in the near future. The following problems have been pointed out as the diameter of such a silicon wafer increases. Therefore, it can be said that the conventional single-wafer method has reached a limit in dealing with the increase in diameter of silicon wafers.

(A) In the conventional thin film deposition apparatus, it is necessary to generate plasma while maintaining a uniform magnetic field in a spatial region having a size equal to or larger than the size of a silicon wafer. When the generated plasma is non-uniform, the uniformity of the film formation rate on the surface of the silicon wafer deteriorates. As a result, malfunctions due to variations in wiring resistance in semiconductor circuits, and opening / closing of connection holes that connect wiring layers
Short circuit failure occurs. (B) It is difficult to optimize the thin film deposition apparatus for obtaining a uniform magnetic field in a wider space area. When a thin film deposition apparatus is composed of a sputtering apparatus, in a space region where the magnetic field is weak, for example, a non-erosion phenomenon (particle reattachment speed becomes faster than sputtering on the target surface, and a phenomenon that a sparse film is deposited on a silicon wafer) ) Is generated, and the production yield of semiconductor devices is reduced due to the generation of dust. (C) In the thin film deposition apparatus, a larger chamber volume is required, a vacuum pump having a high evacuation capacity is required for plasma generation, and it becomes difficult to uniformly supply gas into the chamber. (D) In the case where the thin film deposition apparatus is composed of a sputtering apparatus using an expensive target such as titanium (Ti) or gold (Au),
Generally, not all targets are made of titanium or gold.
A bonding method is generally used in which a titanium plate or a gold plate having a thickness of several mm is attached to a back plate made of an inexpensive metal such as copper (Cu) using solder or the like. A large applied power is required to generate plasma in a wide space region, and there is a problem that heat generation causes peeling at the bonding portion of the target. Such a problem has already occurred in the case of a 20 cm silicon wafer.

[0007] A sputtering method, which can achieve high step coverage deposition at high speed and has a uniform deposition rate within the surface of a substrate (deposition member), is disclosed in, for example, Japanese Unexamined Patent Application Publication No. Hei 5-
It is known from the publication 234893. In this sputtering method, a substrate is placed at a position facing a sputter gun assembly having a plurality of targets. Then, a plasma generating gas is supplied to each concave portion formed on the surface side of each target facing the substrate, and plasma is locally generated in each hollow portion surrounded by the concave portion. Then, the target is sputtered by this plasma, and the sputtered particles whose flight direction is regulated by the wall of the recess are made to fly to the base body that is moved and scanned relative to each target,
Deposit sputtered particles on a substrate.

As described above, the relative scanning of the target and the substrate is said to improve the uniformity of the deposition amount and deposition shape in the surface of the substrate. Further, the diameter of the target can be made smaller than the diameter of the substrate by using a plurality of targets. Moreover, it is said that by providing the target with a recess and locally generating plasma in the recess, it is not necessary to increase the gas pressure in the entire other processing space, and the sputtering efficiency is improved.

However, in the sputtering method disclosed in Japanese Patent Laid-Open No. 5-234893, since a plurality of targets are used, the sputtering apparatus becomes complicated,
It is difficult to reduce the volume of the entire sputtering device. In addition, a specially shaped target with a recess must be used.

Therefore, an object of the present invention is to enable the use of a thin film material source smaller than the substrate, and to use a thin film deposition apparatus having a complicated structure, which is smaller than the conventional thin film deposition apparatus. The chamber volume is sufficient, and in some cases, it is only necessary to generate plasma while maintaining a uniform magnetic field in a space region narrower than the size of the substrate, and a thin film raw material source of a special shape is unnecessary, and It is an object of the present invention to provide a method of manufacturing a semiconductor device to which such a thin film forming method is applied, and a thin film forming apparatus suitable for carrying out such a thin film forming method.

[0011]

A thin film forming method according to a first aspect of the present invention for achieving the above object is to use thin film raw material particles produced by physical vapor deposition as a substrate. A method for forming a thin film on a substrate by irradiation, comprising:
It is characterized in that the spatial position of the flow of the thin film raw material particles and the substrate are moved relative to each other while irradiating a partial region of the thin film raw material particles with the thin film raw material particles.

In the thin film forming method according to the first aspect of the present invention, the spatial position of the flow of the thin film raw material particles is fixed, and the substrate is rotated around an axis perpendicular to the surface of the substrate on which the thin film is formed. The form which can be made can be mentioned. In this case, the planar shape of the region of the substrate irradiated with the thin film raw material particles can be a fan shape having a radius substantially equal to the radius of the substrate, or alternatively, the planar shape of the region of the substrate irradiated with the thin film raw material particles. Can be rectangular with long sides approximately equal to the radius of the substrate. In the latter case, it is preferable to increase the density of the thin film raw material particles with which the substrate is irradiated from the center of the substrate in the circumferential direction. More specifically, (density of thin film raw material particles) / (linear velocity of the substrate) It is preferable to increase the density of the thin film raw material particles with which the substrate is irradiated so that the ratio of (1) becomes substantially constant. In these cases, a plurality of thin films may be formed. The thin films having a plurality of layers may be made of the same kind of material or different kinds of materials.

Alternatively, in the thin film forming method according to the first aspect of the present invention, the flow of thin film raw material particles is linearly and continuously in a direction parallel to the surface of the substrate on which the thin film is formed. An example is a mode in which the thin film raw material particles are irradiated onto a partial region of the substrate while moving the spatial position and the substrate relatively. In this case, the substrate may be fixed and the spatial position of the flow of the thin film raw material particles may be moved, or the spatial position of the flow of the thin film raw material particles may be moved and the substrate may be moved together. It is preferable to fix the spatial position of the flow of particles and move the substrate. Incidentally, it is desirable that the planar shape of the region of the substrate irradiated with the thin film raw material particles is a rectangle having a long side substantially equal to the longest length of the substrate in the direction perpendicular to the moving direction. Further, a plurality of thin films may be formed. The thin films having a plurality of layers may be made of the same kind of material or different kinds of materials.

In the thin film forming method according to the first aspect of the present invention, (a) thin film raw material particles are linearly and continuously formed in a first direction parallel to the surface of the substrate on which the thin film is formed. The thin film raw material particles are irradiated onto a partial region of the base while moving the spatial position of the flow of the film relative to the base, and (b) the thin film raw material particles are irradiated onto the base along the first direction. After you're done
Moving the spatial position of the flow of the thin film raw material particles and the substrate relatively in a stepwise manner in a second direction which is parallel to the surface of the substrate on which the thin film is formed and which is perpendicular to the first direction, Then, the step (a) may be repeated. In this case, the substrate may be fixed and the spatial position of the flow of the thin film raw material particles may be moved, or the spatial position of the flow of the thin film raw material particles may be moved and the substrate may be moved together. It is preferable to fix the spatial position of the flow of particles and move the substrate. The plane shape of the region of the substrate irradiated with the thin-film raw material particles has a length substantially equal to one side shorter than the longest length of the substrate along the first direction and a step-like movement distance along the second direction. It may be a rectangle consisting of one side having a height. Further, a plurality of thin films may be formed.
The thin films having a plurality of layers may be made of the same kind of material or different kinds of materials.

The thin film forming method according to the first aspect of the present invention described above can be applied to the method for manufacturing a semiconductor device according to the first aspect of the present invention described later.

The second object of the present invention to achieve the above object.
The thin film forming method according to the above aspect is a thin film forming method of forming a thin film on a substrate by irradiating a partial region of the substrate with thin film raw material particles generated by physical vapor deposition. And irradiating a partial region of the substrate with the thin film raw material particles, and a step of relatively moving the spatial position of the flow of the thin film raw material particles and the region of the substrate irradiated with the thin film raw material particles in a stepwise manner. Characterized by repeating.

In the thin film forming method according to the second aspect of the present invention, (a) a space for the flow of the thin film raw material particles is stepwise in the first direction parallel to the surface of the substrate on which the thin film is formed. The position and the region of the substrate to which the thin film raw material particles are irradiated are relatively moved to irradiate the thin film raw material particles to a partial region of the substrate, and (b) the thin film raw material particles along the first direction. After the irradiation of the substrate is completed, the spatial position of the flow of the thin film raw material particles is stepwise in a second direction parallel to the surface of the substrate on which the thin film is formed and perpendicular to the first direction. It is preferable to relatively move the region of the substrate irradiated with the thin film raw material particles and then repeat the step (a). In this case, the substrate may be fixed and the spatial position of the flow of the thin film raw material particles may be moved, or the spatial position of the flow of the thin film raw material particles may be moved and the substrate may be moved together. It is preferable to fix the spatial position of the flow of particles and move the substrate. The planar shape of the region of the substrate irradiated with the thin-film raw material particles has one side having a length substantially equal to the stepwise movement distance along the first direction and the stepwise shape along the second direction. It is desirable that the rectangle be composed of one side having a length substantially equal to the moving distance of. Furthermore, it is preferable that the planar shape of the region of the substrate irradiated with the thin film raw material particles is an integral multiple of the size of the product (for example, semiconductor chip) to be formed on the substrate. Also, a plurality of thin films may be formed. The thin films having a plurality of layers may be made of the same kind of material or different kinds of materials.

The thin film forming method according to the second aspect of the present invention described above can be applied to the method for manufacturing a semiconductor device according to the second aspect of the invention described later.

The first aspect of the present invention for achieving the above object
The method for manufacturing a semiconductor device according to the aspect, irradiating the substrate with the thin film raw material particles generated by physical vapor deposition,
A method of manufacturing a semiconductor device in which a thin film is formed on a substrate, wherein a spatial position of a flow of thin film raw material particles and a substrate are relatively moved while irradiating a partial region of the substrate with the thin film raw material particles. Is characterized by.

Second aspect of the present invention for achieving the above object
The method for manufacturing a semiconductor device according to the aspect, irradiating the substrate with the thin film raw material particles generated by physical vapor deposition,
A method of manufacturing a semiconductor device in which a thin film is formed on a substrate, the step of irradiating a partial region of the substrate with thin film raw material particles, the spatial position of the flow of the thin film raw material particles, and the substrate to which the thin film raw material particles are irradiated. It is characterized in that the step of relatively moving the area and the area in step is repeated.

The thin film forming apparatus of the present invention for achieving the above object is for irradiating a substrate with thin film raw material particles produced by physical vapor deposition to form a thin film on the substrate. The thin film deposition apparatus of (a) comprising: (a) a thin film raw material source for generating thin film raw material particles; (b) a support stand for mounting a substrate; and (c) a thin film raw material source and a support stand. A shield plate which is disposed between the shield plates and has an opening for irradiating a part of the substrate with the thin film raw material particles, and (d) a moving means for relatively moving the thin film raw material source and the substrate. , Are provided.

In the thin film forming apparatus of the present invention, there may be mentioned a mode in which the thin film raw material source is fixed and the supporting base is rotated by the moving means. In this case, it is preferable to provide the shield plate with a fan-shaped opening having a radius substantially equal to the radius of the base body, or it is preferable to provide the shield plate with a rectangular opening having a long side substantially equal to the radius of the base body. . In the latter case, from the center of the base body in the circumferential direction,
In order to increase the density of the thin film raw material particles with which the substrate is irradiated, more specifically, the substrate is irradiated with the ratio of (density of thin film raw material particles) / (linear velocity of the substrate) being substantially constant. In order to increase the density of the thin film raw material particles, it is preferable to increase the plasma density in the circumferential direction from the center of the substrate. For that purpose, for example, a magnet may be arranged in the vicinity of the thin film raw material source so that the magnetic flux density increases from the center of the base body in the circumferential direction.

Alternatively, in the thin film deposition apparatus of the present invention, in order to fix the thin film raw material source and move the substrate linearly and continuously in the direction parallel to the surface of the substrate on which the thin film is deposited. An example is a mode in which the support table is placed on a moving table or a moving stage corresponding to the moving means. In this case, it is preferable to provide the shield plate with a rectangular opening having a long side that is substantially equal to the longest length of the base body in the direction perpendicular to the moving direction of the base body.

Alternatively, in the thin film forming apparatus of the present invention, the thin film raw material source may be fixed and the support may be placed on an XY table or an XY stage corresponding to the moving means. In this case, the thin-film raw material source is fixed, and the first direction (X
Direction or Y direction), the substrate is moved linearly and continuously, and further, a second direction (Y direction) which is parallel to the surface of the substrate on which the thin film is formed and which is perpendicular to the first direction. Alternatively, it is preferable to have a structure in which the substrate can be moved stepwise in the X direction). In this case, the shape of the opening provided in the shield plate is one side shorter than the longest length of the base body along the first direction (X direction or Y direction) and the second direction (Y direction or X direction). It is preferable to make a rectangle having one side having a length substantially equal to the step-like movement distance to. Alternatively, the thin film raw material source is fixed, the substrate is moved stepwise in the first direction (X direction or Y direction) parallel to the surface of the substrate on which the thin film is formed, and further, the thin film is formed. It is also possible to adopt a structure in which the substrate can be moved stepwise in a second direction (Y direction or X direction) which is parallel to the surface of the substrate and which is perpendicular to the first direction. In this case, the shape of the opening provided in the shield plate has a side having a length substantially equal to the stepwise movement distance in the first direction (X direction or Y direction) and the second direction (Y direction). Alternatively, it is preferable to use a rectangular shape having one side having a length substantially equal to the stepwise movement distance in the X direction). Further, in this case, it is preferable that the shape of the opening is an integral multiple of the size of the product (for example, semiconductor chip) to be formed on the base.

In the thin film deposition apparatus of the present invention, a plurality of thin film raw material sources are provided in the thin film deposition apparatus in order to form a plurality of thin films, and corresponding to these plural thin film raw material sources,
It is also possible to provide an opening in the shield plate.

The shield plate may be made of any material as long as it is a material capable of reliably shielding the thin film raw material particles, and in which dust is hardly generated by the attached thin film raw material particles. Is preferred. For example, when shielding aluminum-based thin film raw material particles, it is preferable to use a stainless steel shield plate, and when shielding titanium-based thin film raw material particles, use an aluminum-based or titanium-based shield plate. It is preferable.

As the thin film forming method of the present invention or the thin film forming method in the semiconductor device manufacturing method of the present invention, specifically, a DC two-pole sputtering method, a DC three-pole DC
DC multipole sputtering method such as quadrupole, DC magnetron sputtering method, RF dipole sputtering method, RF multipole sputtering method such as RF triode / RF quadrupole, RF magnetron sputtering method, bias sputtering method, reactive sputtering method, asymmetrical AC sputtering method Various sputtering methods such as the getter sputtering method can be used. Moreover, various ion plating methods such as a DC ion plating method, a direct current method, a high frequency method, a cluster ion beam method, and a hot cathode method can be mentioned. Furthermore, the resistance heating vapor deposition method,
Various vacuum vapor deposition methods such as an electron beam vapor deposition method, a high frequency heating vapor deposition method, a laser beam heating vapor deposition method, and a flash vapor deposition method can be mentioned. The thin film deposition apparatus may be a thin film deposition apparatus suitable for carrying out these exemplified methods.

As the thin film raw material particles or thin film, Al,
Al-Si, Al-Cu, Al-Si-Cu, Al-S
i-Ti, Al-Ti, Ti, TiN, TiON, A
g, Ag-Cu, Au, Au-Ge, Au-Pd, Au
-Zn, Co, Cr, Cu, Ni, Pd, W, W-Ti
Can be illustrated. As a thin film raw material source, A
1, Al-Si, Al-Cu, Al-Si-Cu, Al
-Si-Ti, Al-Ti, Ti, Ag, Au, Co,
Examples thereof include Cr, Cu, Ni, Pd, and W.
Furthermore, Si or SiO ₂ can be exemplified as the substrate or substrate.

In the present invention, the spatial position of the flow of the thin film raw material particles and the substrate (or the substrate to which the thin film raw material particles are irradiated) while or after the partial irradiation of the thin film raw material particles with the thin film raw material particles. Area) is moved relative to.
Therefore, the size of the thin film raw material source can be made smaller than the size of the substrate, and it is possible to use the thin film deposition apparatus having a simple structure and a chamber volume smaller than that of the conventional one. Furthermore, in some cases, plasma may be generated while maintaining a uniform magnetic field in a space area smaller than the size of the substrate, so that a thin film having a uniform film quality and film thickness can be formed with good controllability. Is possible.

[0030]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings based on an embodiment of the invention (may be abbreviated as an embodiment).

(Embodiment 1) A thin film forming method according to a first aspect of the present invention and a semiconductor device manufacturing method according to a first aspect of the present invention. An outline of a thin film forming apparatus of the present invention suitable for carrying out such a method is shown in the schematic view of FIG. still,
In all the embodiments, a sputtering apparatus will be described as an example of the thin film forming apparatus. This thin film deposition apparatus 10
Is a chamber 11, a gas introduction part 12 for introducing gas into the chamber 11, a gas exhaust part 13 for exhausting gas from the chamber 11, a cathode 14,
It is composed of a target 15 corresponding to a thin film raw material source and a support 19 on which a substrate 20 made of a silicon wafer is placed. The thin film deposition apparatus 10 is provided between a target 15 corresponding to a thin film raw material source and a support 19,
A shield plate 17 for irradiating a partial region of the substrate with the thin film raw material particles is provided. In the thin film deposition apparatus of the first embodiment, the plasma density is almost constant. This state is schematically shown in FIG.

In the first embodiment, the thin film raw material source is fixed and the support is rotated. Specifically, the rotating shaft 19A extends from the lower portion of the support base 19, and a rotating means (not shown) (for example, composed of a motor and a gear) serves as the rotating shaft 19A.
Engage with, which causes the support 19 to rotate. The rotating shaft 19A and rotating means (not shown) correspond to moving means for relatively moving the thin film raw material source and the substrate. With such a structure, the thin film 21 is formed with the spatial position of the flow of the thin film raw material particles fixed (that is, with the target 15 and the shield plate 17 that are the thin film raw material sources fixed). Axis (L _ax ) perpendicular to the plane of the substrate 20 to be _treated
The substrate 20 can be rotated around.

FIG. 3A shows a schematic plan view of the shield plate 17. In the first embodiment, in order to irradiate a partial region of the substrate 20 with the thin film raw material particles, the shield plate 17 is provided with a fan-shaped opening 18 having a radius substantially equal to the radius of the substrate 20. Here, the substantially equal radii mean
This means that it does not have to be exactly equal to the radius of the substrate 20. By providing the shield plate 17 with the opening 18 having such a shape, the substrate 2 irradiated with the thin film raw material particles
The plane shape of the region of 0 can be a fan shape having a radius substantially equal to the radius of the base body 20. The plane shape of the region of the substrate 20 irradiated with the thin film raw material particles means the flow of the thin film raw material particles when the flow of the thin film raw material particles is cut along a plane parallel to the surface of the substrate on which the thin film is formed. Means the shape. When the shape of the opening is rectangular, the moving speed (linear velocity) of the base becomes higher toward the outer peripheral side of the base, and as a result, the film thickness becomes thinner toward the outer peripheral side of the base. By making the region of the substrate 20 irradiated with the thin film raw material particles into a fan shape, such a phenomenon can be avoided and a thin film having a uniform film thickness can be formed.
The planar shape of the target 15 is larger than that of the opening 18 and can be similar to the shape of the opening 18.
The same applies to the following examples.

When the central angle (θ) of the fan shape is 30 degrees, it is necessary to form a thin film having a thickness of 100 nm on the entire surface of the substrate 20 if the film formation rate when the substrate is not rotated is 1200 nm / min. The time is 1 minute. Note that, for example, if the rotation speed of the base is 1 rpm, one thin film is formed on the base. On the other hand, if the rotation speed of the substrate is 2 rpm, a two-layer thin film is formed on the substrate. In this case, a thin film composed of a plurality of layers made of the same kind of material is formed.

The film forming conditions for forming an aluminum film by the DC magnetron sputtering method will be exemplified below. Target: Aluminum Gas used: Argon gas = 100 sccm Pressure: 0.26 Pa DC power: 15 kW

In the method of manufacturing a semiconductor device according to the first embodiment, for example, a thin film made of aluminum is formed under the above conditions on an insulating layer formed on a silicon wafer (corresponding to a base), Wiring made of aluminum can be formed by patterning the thin film based on the photolithography technique and the dry etching technique.

Film forming conditions for forming a TiN film by the DC magnetron sputtering method will be exemplified below. Target: Ti Working gas: Argon gas / Nitrogen gas = 40/80 sccm Pressure: 0.33 Pa DC power: 8 kW

In the method of manufacturing a semiconductor device according to the first embodiment, for example, after forming a thin film made of aluminum under the above conditions on an insulating layer formed on a silicon wafer (corresponding to a base), TiN under the above conditions
To form an antireflection film. When such an antireflection film is not formed, when a resist material is applied on a thin film made of aluminum and the resist material is exposed by a photolithography technique, the thin film made of aluminum reflects light to reflect a desired resist material. This is because the pattern may not be formed.

(Embodiment 2) The thin film deposition apparatus in Embodiment 2 whose schematic diagram is shown in FIG. 2 is a modification of Embodiment 1. As shown in the schematic plan view of FIG. 3B, the shape of the opening 18 provided in the shield plate 17 in the second embodiment has a long side (L) substantially equal to the radius of the base body 20.
Is a rectangle with. When the target 15 has a rectangular planar shape, plasma can be generated more uniformly than a fan-shaped target. However, the ratio of (density of thin film raw material particles) / (linear velocity of the substrate) becomes smaller as it approaches the outer peripheral portion of the substrate, and as a result, the film forming rate decreases as it approaches the outer peripheral portion of the substrate. In order to avoid such a phenomenon, the density of the thin film raw material particles with which the substrate is irradiated may be increased in the circumferential direction from the center of the substrate.
Specifically, the density of the thin film raw material particles with which the substrate is irradiated may be increased so that the ratio of (density of thin film raw material particles) / (linear velocity of the substrate) becomes substantially constant. This makes it possible to equalize the film forming rates at the outer peripheral portion of the substrate and the central portion of the substrate.

To this end, a permanent magnet, for example, is arranged near the thin film raw material source (more specifically, inside the cathode 14) so that the magnetic flux density increases in the circumferential direction from the center of the substrate. It is preferable. As a result, the magnetic field on the surface of the target 15 becomes stronger toward the outer peripheral direction of the base body 20. As a result, the plasma density increases toward the outer peripheral direction of the substrate 20. Note that the plasma density is schematically shown in FIG. 2 by a chain line. Here, although the plasma density shown in FIG. 2 changes linearly, it may change stepwise depending on the case.

In the second embodiment, the radius of the substrate is 1
5 cm, the length of the long side L of the rectangular opening 18 is 15 cm,
The length of the short side was 10 mm. When the film formation rate when the substrate 20 is not rotated is proportional to the distance from the center of the substrate and the film formation rate at the outermost periphery of the substrate 20 is 1200 nm / min, a thin film having a thickness of 100 nm is formed on the entire surface of the substrate. The time required to form a film is about 8 minutes. Note that, for example, if the rotation speed of the substrate is 1/8 rpm, one thin film is formed on the substrate. On the other hand, if the rotation speed of the substrate is 1 rpm, 8
A thin film of layers is deposited on the substrate. In this case, a thin film composed of a plurality of layers made of the same kind of material is formed. Here, when the length of the short side of the opening is increased in order to increase the film formation rate, the film formation rate is simply not proportional to the linear velocity.

The method of manufacturing the semiconductor device according to the second embodiment can be substantially the same as that of the first embodiment, and detailed description thereof will be omitted.

(Embodiment 3) Embodiment 3 also relates to a thin film deposition method according to the first aspect of the present invention and a semiconductor device manufacturing method according to the first aspect of the present invention. In the third embodiment, the thin film raw material is moved linearly and continuously in a direction parallel to the surface of the substrate on which the thin film is formed, while relatively moving the spatial position of the flow of thin film raw material particles and the substrate. The particles are irradiated onto a region of the substrate. More specifically, with the spatial position of the flow of the thin film raw material particles fixed (that is, the target 15 that is the thin film raw material source and the shield plate 17 are fixed), the surface of the substrate 20 on which the thin film is formed. While the substrate 20 is linearly and continuously moved in a direction parallel to, the thin film raw material particles are applied to a partial region of the substrate 20.

In the third embodiment, the planar shape of the region of the substrate irradiated with the thin film raw material particles is a rectangle having a long side substantially equal to the longest length of the substrate in the direction perpendicular to the moving direction. FIG. 4 shows a schematic diagram of a thin film deposition apparatus suitable for carrying out the third embodiment. The thin film deposition apparatus of the third embodiment is different from that of the first embodiment in that the support base 19 is mounted on a moving table or a moving stage (not shown) corresponding to the moving means. . The base body 20 placed on the support table 19 can be linearly and continuously moved in the left and right directions in FIG. 4 by a moving table or a moving stage.

In order to irradiate a partial region of the substrate 20 with the thin film raw material particles, as shown in a schematic plan view of FIG. 6A, a direction perpendicular to the moving direction of the substrate 20 (see FIG. 4). Also different from the first embodiment is that the shield plate 17 is provided with a rectangular opening 18 having a long side L substantially equal to the longest length of the base body 20 in the direction perpendicular to the paper surface of FIG.

The length of the short side of the opening 18 is 20 mm,
When the film formation rate is 100 nm / min, the thickness is 500 nm
When forming the thin film, if the substrate 20 is moved at a speed of 4 mm / min, the film formation is completed by one irradiation of the thin film raw material particles. When the substrate 20 is moved at a speed of 8 mm / min, film formation is completed by irradiating the thin film raw material particles twice. In this case, a thin film composed of a plurality of layers made of the same kind of material is formed.

The thickness of the thin film 21 formed on the substrate 20 is measured by using a crystal oscillator, magnetism or X-ray,
By detecting how much the measured film thickness value deviates from the set film thickness value and controlling the moving speed of the base body 20 based on the detection result, more accurate film thickness control becomes possible. A dummy substrate for film thickness measurement is placed on the support 19 upstream of the moving substrate 20, and a thin film is formed on the dummy substrate for film thickness measurement. The film thickness can be controlled. In measurement of the film thickness using magnetism, a coil is arranged below the base body 20 in the support base 19. Then, a magnetic field is formed by passing an electric current through such a coil, and the change in the magnetic field when the thin film 21 is formed on the substrate 20 is measured based on the change in the current flowing through the coil. The method of obtaining can be illustrated.

The method of manufacturing the semiconductor device according to the third embodiment can be substantially the same as that of the first embodiment, and detailed description thereof will be omitted.

(Embodiment 4) Embodiment 4 is a modification of Embodiment 3. In the fourth embodiment, a plurality of thin films are formed. The thin films having a plurality of layers are composed of different materials. In the thin film deposition apparatus according to the fourth embodiment, which is schematically shown in FIG. 5, in order to irradiate a partial region of the substrate with the plurality of types of thin film raw material particles, a plurality of types of thin film raw material sources (in the fourth embodiment, 2A) target 15A,
15B is provided in the thin film deposition apparatus, and corresponding to the targets 15A and 15B which are thin film raw material sources of these plural types,
The shield plate 17 is provided with openings 18A and 18B (see the schematic plan view of FIG. 6B). Incidentally, in the thin film deposition apparatus in the fourth embodiment shown in FIG.
In the same manner as described in the first embodiment, the gas introduction part 12
A, 12B, gas discharge parts 13A, 13B, cathode 14
A and 14B are provided. Thereby, the base 20
Thin films 21A and 21B are formed on top. The thin film raw material source may be of the same type, if necessary.

By depositing the thin film raw material source in the order of the desired film structure and irradiating a partial region of the substrate with the thin film raw material particles, the laminated thin films can be formed easily at once and in a short time. Is possible. Since the thin film layers other than the uppermost thin film layer are covered with the uppermost thin film layer, it is possible to reliably prevent the thin film layers other than the uppermost thin film layer from being deteriorated such as being oxidized. Since the moving speed of the substrate is common, it is necessary to adjust the film forming speed and the length of the short side of the opening for each thin film layer.

Film forming conditions for a laminated thin film having a two-layer structure are illustrated below. The lower layer was made of titanium (Ti), the upper layer was made of aluminum, and the moving speed of the substrate was 40 mm / min. Lower layer deposition conditions Target: Ti Working gas: Ar = 120 sccm Pressure: 0.33 Pa DC power: 8 kW Deposition rate: 0.2 μm / min Short side length of opening: 20 mm Film thickness: 0.1 μm Upper layer deposition Conditions Target: Al Working gas: Ar = 100 sccm Pressure: 0.33 Pa DC power: 10 kW Film formation rate: 0.5 μm / min Short side length of opening: 40 mm Film thickness: 0.5 μm

In the method of manufacturing a semiconductor device according to the fourth embodiment, for example, a thin film (lower layer) made of titanium is formed under the above conditions on an insulating layer formed on a silicon wafer (corresponding to a base). A film is formed, and a thin film (upper layer) made of aluminum is formed thereon. Then, by patterning these thin films based on the photolithography technique and the dry etching technique, wirings made of aluminum and titanium can be formed. still,
The purpose of forming a thin film made of titanium is to improve the wettability of the thin film made of aluminum. The purpose of forming a thin film made of titanium is also to extend the life of the wiring by improving the crystal orientation of aluminum and enhancing the electromigration resistance.

A 25 nm thick TiN film, which functions as an antireflection film, is further formed on the upper layer made of aluminum.
When it is necessary to form a layer, a target made of titanium and a cathode are arranged downstream of the target 15B of the thin film forming apparatus shown in FIG. 5, and the shield plate 17 at a position facing the target is provided. An opening may be provided.
The film forming conditions for the TiN layer having a thickness of 25 nm are exemplified below. Target: Ti Working gas: Ar / N ₂ = 40/80 sccm Pressure: 0.33 Pa DC power: 2 kW Deposition rate: 50 nm / min Short side length of opening: 20 mm Film thickness: 25 nm

(Embodiment 5) Embodiment 5 also relates to a thin film forming method according to the first aspect of the present invention. Embodiment 5
In the thin film deposition apparatus suitable for carrying out
Similar to the thin film deposition apparatus in, the target 15 which is a thin film raw material source is fixed. The difference from the thin film deposition apparatus in the third embodiment is that the support 19 is placed on an XY table or an XY stage corresponding to the moving means. That is, in the thin film forming apparatus according to the fifth embodiment, with respect to the target 15 which is a thin film raw material source,
Substrate 2 linearly and continuously in a first direction (direction perpendicular to the paper surface of FIG. 4) parallel to the surface of substrate 20 on which the thin film is formed.
You can move 0. Further, the substrate 20 is moved stepwise in a second direction (left-right direction in FIG. 4) parallel to the surface of the substrate on which the thin film is formed with respect to the thin film raw material source and at a right angle to the first direction. Can be done.

As shown in the schematic plan view of FIG. 7A, the shield plate 17 is arranged along the first direction in order to irradiate a partial region of the substrate 20 with the thin film raw material particles. A rectangular opening 18 having one side (A) shorter than the longest length of the substrate and one side (B) having a length substantially equal to the stepwise moving distance in the second direction is formed. When the radius of the substrate 20 is 15 cm, the lengths of the sides A and B are, for example, about 5
cm. If the length of one side (B) is an integral multiple of the size of the product (for example, semiconductor chip) to be formed on the base, the product manufacturing yield is improved.

In the fifth embodiment, first, the first direction parallel to the surface of the substrate 20 on which the thin film is formed (the direction perpendicular to the paper surface of FIG. 4, and the upper direction in FIG. 7A). Linearly and continuously in the direction from the bottom to downward) while irradiating the partial region of the substrate with the thin film raw material particles while relatively moving the spatial position of the flow of the thin film raw material particles and the substrate 20 [step (I)]. Specifically, the spatial position of the flow of the thin film raw material particles is fixed (that is, the target 15 as the thin film raw material source and the shield plate 17 are fixed), and the substrate 20 is moved linearly and continuously. Let In FIG. 7A, such a section is indicated by a section “a” surrounded by a broken line.

Next, after the irradiation of the thin film raw material particles along the first direction onto the substrate 20 is completed, the thin film raw material particles are parallel to the surface of the substrate 20 on which the thin film is to be formed and perpendicular to the first direction. The spatial position of the flow of the thin film raw material particles and the substrate 20 are stepwise in the second direction (the left-hand direction in FIGS. 4 and 7A).
And are relatively moved [step (b)]. In particular,
Since the spatial position of the flow of the thin film raw material particles is fixed (that is, the target 15 as the thin film raw material source and the shield plate 17 are fixed), the substrate 20 was moved stepwise. The amount of movement of the base body 20 is substantially equal to the length of one side (B) of the opening 18.

Then, the step (a) is repeated. That is, linearly in the first direction parallel to the surface of the substrate 20 on which the thin film is formed (the direction perpendicular to the paper surface of FIG. 4, and the direction from bottom to top in FIG. 7A). Further, continuously, the spatial position of the flow of the thin film raw material particles and the substrate 20 are relatively moved, and the thin film raw material particles are irradiated onto a partial region of the substrate. In FIG. 7A, such a section is indicated by a section “b” surrounded by a broken line. Then, step (b) and step (a) are repeated to form a thin film in the section “c” and the section “d”. In the example shown in FIG. 7A, step (a) is executed four times and step (b) is executed three times for convenience.

In the fifth embodiment, the plane shape of the region of the substrate 20 irradiated with the thin film raw material particles is as described above.
Since it is a rectangle consisting of one side (A) shorter than the longest length of the base body along the first direction and one side (B) having a length substantially equal to the stepwise movement distance along the second direction, The volume of the chamber 11 of the thin film deposition apparatus can be further reduced.

The method of manufacturing the semiconductor device according to the fifth embodiment can be substantially the same as that of the first embodiment, and detailed description thereof will be omitted.

(Embodiment 6) Embodiment 6 relates to a method for forming a thin film according to the second aspect of the present invention and a method for manufacturing a semiconductor device according to the second aspect of the present invention. A thin film deposition apparatus suitable for carrying out the sixth embodiment can be substantially the same as the thin film deposition apparatus described in the fifth embodiment.
However, the fifth embodiment is that the moving system of the support table 19 mounted on the XY table or the XY stage corresponding to the moving means is a so-called step-and-repeat system.
Is different from That is, as shown in a schematic plan view in FIG. 7B, the step of irradiating a partial region of the substrate 20 with the thin film raw material particles, the spatial position of the flow of the thin film raw material particles and the irradiation of the thin film raw material particles. The step of moving the region of the substrate 20 to be moved in a stepwise manner is repeated. In the sixth embodiment, as a thin film forming apparatus, a thin film raw material source is fixed, and a first direction parallel to the surface of a substrate on which a thin film is formed (in FIG. 4, a direction perpendicular to the paper surface). 7 (B), the substrate 20 can be moved in a stepwise manner in a vertical direction), and further, it is parallel to the surface of the substrate on which the thin film is formed and at a right angle to the first direction. Second direction (Fig. 4
And XY which is a moving means capable of moving the base body 20 stepwise in the left hand direction in FIG. 7B.
An apparatus having a table or an XY stage was used. The shape of the opening provided in the shield plate is substantially equal to one side (A) having a length substantially equal to the stepwise moving distance in the first direction and the stepwise moving distance in the second direction. It is assumed to be a rectangle composed of one side (B) having a length.

Specifically, in the sixth embodiment, the spatial position of the flow of the thin film raw material particles is fixed (that is, the target 15 as the thin film raw material source and the shield plate 17 are fixed), and first, , Stepwise in a first direction parallel to the surface of the substrate 20 on which the thin film is formed (direction perpendicular to the paper surface in FIG. 4, and from bottom to top in FIG. 7B). By moving the region of the substrate to which the thin film raw material particles are irradiated, the thin film raw material particles are a partial region of the substrate (indicated by “a”, “b” ... “f” in FIG. 7B). [Step (a)]. The amount of movement of the base 20 is substantially equal to the length of one side (A) of the opening 18.

After the irradiation of the thin film raw material particles along the first direction to the substrate is completed, a second direction (parallel to the surface of the substrate on which the thin film is formed and perpendicular to the first direction ( The region of the substrate 20 irradiated with the thin film raw material particles is moved stepwise in the left-hand direction in FIGS. 4 and 7B). The amount of movement of the base body 20 is substantially equal to the length of one side (B) of the opening 18.

Then, step (a) is repeated. As a result, a thin film is formed in the regions "g", "h", "i", .... After the irradiation of the thin film raw material particles onto the substrate along the first direction (the direction perpendicular to the paper surface in FIG. 4 and the direction from top to bottom in FIG. 7B) is completed, With respect to the particle irradiation position, a region of the substrate irradiated with the thin film raw material particles is arranged in a second direction parallel to the surface of the substrate on which the thin film is formed and perpendicular to the first direction (see FIG. 4 and It is moved relatively stepwise in the left-hand direction in FIG. 7B. Then, the step (a) is repeated again. In the example shown in FIG. 7B, for convenience, step (a) is executed 8 times and step (b) is executed 7 times. Incidentally, since the pattern formed on the substrate 20 is usually provided with an alignment mark, by using this alignment mark as a reference point for alignment, the spatial position of the flow of the thin film raw material particles and the thin film raw material particles are The alignment with the area of the substrate to be irradiated can be performed with high accuracy.

In the sixth embodiment, the planar shape of the region of the substrate irradiated with the thin film raw material particles is one side (A) having a length substantially equal to the stepwise moving distance along the first direction.
And a rectangle having one side (B) having a length substantially equal to the stepwise movement distance along the second direction. If the planar shape of the region of the substrate irradiated with the thin film raw material particles is set to an integral multiple of the size of the product to be formed on the substrate, the uniformity of the film thickness and film quality of each product (for example, semiconductor chip) can be improved. Controllability is improved. Furthermore, if a gap is formed between the regions where the thin film is formed and the gap is aligned with the scribing line, the product manufacturing yield is improved. Moreover, since the formed thin film is not continuous, it is possible to prevent the substrate from warping due to the stress of the thin film.

The method of manufacturing the semiconductor device according to the sixth embodiment can be substantially the same as that of the first embodiment, and detailed description thereof will be omitted.

Although the present invention has been described based on the embodiments of the present invention, the present invention is not limited to these embodiments. The various conditions, materials used, dimensions of the openings provided in the shield plate, and the structure of the thin film deposition apparatus described in the embodiments are examples, and the design can be appropriately changed. In the embodiments, the present invention has been described by taking the sputtering method as an example, but the present invention can be applied to the ion plating method and the vacuum deposition method. In addition, the film formation of a thin film including a plurality of layers described in Embodiment 4 can be applied to other embodiments.

In the thin film forming apparatus according to the third to sixth embodiments, an opening / closing mechanism such as a shutter is used.
For example, by disposing it between the thin-film raw material source and the shield plate, or between the shield plate and the support base, it is possible to keep the plasma maintained even during the stepwise movement of the substrate. It is possible to avoid film formation in an unstable state.

As shown in FIGS. 8 to 10, the shield plate 1
You may provide several opening 18 in 7. When the rotary shaft 17A is provided in the center of the shield plate 17 and the rotary shaft 17A is rotated by a rotating mechanism (not shown), when the vicinity of the opening is contaminated, the uncontaminated opening is opened. Target 15 and support 19 which are thin film raw material sources
And can be arranged between them.

Alternatively, a plurality of shield plates each having an opening provided with respect to the rotary shaft are detachably attached. Further, a thin film deposition apparatus having a structure capable of accommodating a shield plate, which is not arranged between the thin film raw material source and the support, in a preliminary chamber that can be evacuated and released to the atmosphere independently of the chamber. You can also With such a structure, when the vicinity of the opening is contaminated, the rotating shaft is rotated by the rotating mechanism, so that the shield plate having the uncontaminated opening is provided between the thin film raw material source and the support base. It can be arranged in between. Moreover, the shield plate contaminated near the opening is stored in the spare chamber, the spare chamber is opened to the atmosphere without breaking the vacuum of the chamber, and the shield plate contaminated near the opening is used as a new shield plate. Can be exchanged.

[0071]

According to the present invention, a thin film is not formed simultaneously on the entire surface of a substrate, but a thin film is formed on a partial region of the substrate. Therefore, for example, plasma is formed in a narrow space region. The plasma density can be made uniform or a desired plasma density pattern can be easily obtained, and the thin film source and the thin film deposition apparatus can be downsized. Further, a thin film can be formed by a thin film raw material source or a thin film forming apparatus having a simple shape and structure, and power can be saved. Moreover, since the chamber volume can be made smaller than that of the conventional thin film deposition apparatus, it is easy to uniformly supply the gas into the chamber without the need for a vacuum pump having a high evacuation capacity. Furthermore, since the film formation area is narrow, it is possible to form a thin film having a uniform film quality and film thickness with good controllability over the entire substrate.

[Brief description of drawings]

FIG. 1 is a schematic view of a thin film deposition apparatus of the present invention suitable for carrying out a thin film deposition method and a semiconductor device manufacturing method according to a first embodiment of the invention.

FIG. 2 is a schematic view of another thin film deposition apparatus of the present invention suitable for carrying out the thin film deposition method and the semiconductor device manufacturing method according to the second embodiment of the invention.

FIG. 3 is a schematic plan view of a shield plate according to Embodiment 1 of the invention and Embodiment 2 of the invention.

FIG. 4 is another thin film deposition apparatus of the present invention suitable for carrying out the thin film deposition method and semiconductor device manufacturing method according to the third embodiment of the invention, the fifth embodiment of the invention, and the sixth embodiment of the invention. FIG.

FIG. 5 is a schematic view of another thin film deposition apparatus of the present invention suitable for carrying out the thin film deposition method and the semiconductor device manufacturing method according to the fourth embodiment of the invention.

FIG. 6 is a schematic plan view of a shield plate according to a third embodiment of the invention and a fourth embodiment of the invention.

FIG. 7 is a schematic plan view of a shield plate according to a fifth embodiment of the invention and a sixth embodiment of the invention.

FIG. 8 is a schematic diagram of a thin film deposition apparatus of another embodiment of the present invention.

9 is a schematic plan view of a shield plate used in the thin film deposition apparatus shown in FIG.

FIG. 10 is a schematic plan view of a shield plate used in the thin film deposition apparatus shown in FIG.

FIG. 11 is a schematic view showing a configuration of a conventional sputtering device.

[Explanation of symbols]

10 ... Thin film forming apparatus, 11 ... Chamber, 1
2, 12A, 12B ... Gas introduction part, 13, 13A,
13B ... Gas exhaust part, 14, 14A, 14B ...
Cathode, 15, 15A, 15B ... Target, 1
6, 16A, 16B ... Plasma, 17 ... Shield plate, 18, 18A, 18B ... Opening part, 19 ...
Support base, 20 ... Base, 21, 21A, 21B ...
Thin film

Claims (19)

[Claims] 1. A thin film forming method for irradiating a substrate with thin film raw material particles produced by physical vapor deposition to form a thin film on the substrate, the thin film raw material particles being part of the substrate. The method for forming a thin film, characterized in that the spatial position of the flow of the thin film raw material particles and the substrate are relatively moved while irradiating the region. 2. The spatial position of the flow of thin film raw material particles is fixed,
The thin film deposition method according to claim 1, wherein the substrate is rotated around an axis line perpendicular to the surface of the substrate on which the thin film is deposited. 3. The thin film forming method according to claim 2, wherein the planar shape of the region of the substrate irradiated with the thin film raw material particles is a fan shape having a radius substantially equal to the radius of the substrate. 4. The thin film forming method according to claim 2, wherein the planar shape of the region of the substrate irradiated with the thin film raw material particles is a rectangle having long sides substantially equal to the radius of the substrate. 5. The method for forming a thin film according to claim 4, wherein the density of the thin film raw material particles with which the substrate is irradiated is increased from the center of the substrate toward the circumferential direction. 6. The thin film raw material particles are moved linearly and continuously in a direction parallel to the surface of the substrate on which the thin film is formed, while relatively moving the spatial position of the flow of the thin film raw material particles and the substrate. The thin film forming method according to claim 1, wherein irradiation is performed on a partial region of the substrate. 7. The planar shape of the region of the substrate irradiated with the thin film raw material particles is a rectangle having a long side substantially equal to the longest length of the substrate in the direction perpendicular to the moving direction.
The method of forming a thin film according to. 8. The thin film forming method according to claim 6, wherein a plurality of thin films are formed. 9. (a) Linearly and continuously moving the spatial position of the flow of thin film raw material particles and the substrate in a first direction parallel to the surface of the substrate on which the thin film is formed. While irradiating a part of the substrate with the thin film raw material particles, (b) after the irradiation of the thin film raw material particles along the first direction onto the substrate is completed, By relatively moving the spatial position of the flow of the thin film raw material particles and the substrate in steps in a second direction which is parallel and is perpendicular to the first direction, and then repeats the step (a). The thin film forming method according to claim 1. 10. The planar shape of the region of the substrate irradiated with the thin-film raw material particles has a side shorter than the longest length of the substrate along the first direction and a stepwise movement along the second direction. The thin film forming method according to claim 9, wherein the thin film forming method is a rectangle including one side having a length substantially equal to the distance. 11. The thin film forming method according to claim 9, wherein a plurality of thin films are formed. 12. A thin film forming method for irradiating a partial region of a substrate with thin film raw material particles produced by physical vapor deposition to form a thin film on the substrate. And a step of irradiating a partial region of the substrate with a spatial position of the flow of the thin film raw material particles and a step of relatively moving the region of the substrate irradiated with the thin film raw material particles in a stepwise manner. Method for forming thin film. 13. (a) The spatial position of the flow of the thin film raw material particles and the region of the substrate irradiated with the thin film raw material particles are stepwise in a first direction parallel to the surface of the substrate on which the thin film is formed. By relatively moving, the thin film raw material particles are irradiated to a partial region of the substrate, and (b) after the irradiation of the thin film raw material particles along the first direction to the substrate is completed, a thin film is formed. Relative to the spatial position of the flow of the thin film raw material particles and the region of the substrate irradiated with the thin film raw material particles in a stepwise manner in a second direction parallel to the surface of the substrate and perpendicular to the first direction. 13. The method for forming a thin film according to claim 12, characterized in that the method comprises the steps of: 14. The planar shape of the region of the substrate irradiated with the thin film raw material particles has one side having a length substantially equal to the stepwise moving distance along the first direction and the two sides along the second direction. 14. The thin film forming method according to claim 13, wherein the thin film forming method is a rectangle having one side having a length substantially equal to the stepwise moving distance. 15. The thin film forming method according to claim 14, wherein the planar shape of the region of the substrate irradiated with the thin film raw material particles is an integral multiple of the size of the product to be formed on the substrate. 16. The thin film forming method according to claim 13, wherein a plurality of thin films are formed. 17. A method of manufacturing a semiconductor device, wherein a thin film raw material particle produced by physical vapor deposition is applied to a substrate to form a thin film on the substrate. A method for manufacturing a semiconductor device, characterized in that the spatial position of the flow of the thin film raw material particles and the substrate are relatively moved while irradiating a partial region. 18. A method of manufacturing a semiconductor device, comprising: irradiating a substrate with thin film raw material particles produced by physical vapor deposition to form a thin film on the substrate. A semiconductor device characterized by repeating a step of irradiating a partial region and a step of relatively moving the spatial position of the flow of the thin film raw material particles and the region of the substrate irradiated with the thin film raw material particles in a stepwise manner Manufacturing method. 19. A thin film forming apparatus for irradiating a substrate with thin film raw material particles produced by physical vapor deposition to form a thin film on the substrate, comprising: (a) thin film raw material particles. Is provided between the thin film raw material source and the supporting base, and (b) the thin film raw material source and the supporting base. A thin film deposition apparatus comprising: a shield plate provided with an opening for irradiating a region; and (d) a moving means for relatively moving a thin film raw material source and a substrate.