CN112004956B

CN112004956B - Sputtering apparatus

Info

Publication number: CN112004956B
Application number: CN201980026774.2A
Authority: CN
Inventors: 郑炳和; 张容硕; 朴多熙; 柳沼寛寿; 岩桥照明
Original assignee: Ulvac Inc; Ulvac Korea Ltd
Current assignee: Ulvac Inc; Ulvac Korea Ltd
Priority date: 2018-06-28
Filing date: 2019-04-26
Publication date: 2023-05-12
Anticipated expiration: 2039-04-26
Also published as: KR20200001839A; TW202000960A; CN112004956A; TWI818038B; KR102412503B1; WO2020004801A1; JP2021528558A

Abstract

The sputtering apparatus according to an embodiment includes: a stage rotated in a state of supporting a substrate having a fine pattern; a target material opposite to the substrate; and a cutting member including a cutting body disposed between the stage and the target, and a through hole formed in the cutting body and separated from the target so as to pass at least a part of the film forming material that has traveled to the substrate.

Description

Sputtering apparatus

Technical Field

The present invention relates to a sputtering apparatus.

Background

In a sputtering apparatus, it is important to uniformly form a film of a film forming material on a substrate. The target material is arranged side by side with the substrate. The film-forming material separated from the target and directed toward the substrate may travel along a normal direction of the substrate or may travel along a path inclined at a certain angle with respect to the normal direction of the substrate. Thus, the film can be formed relatively uniformly in the center portion of the substrate, but the film is formed relatively unevenly in the edge portion of the substrate. In order for the substrate to function properly, uniform film formation is required. In particular, for a wafer having a fine pattern, more uniform film formation is required.

The foregoing background art is what the inventors have held or learned during the process of the invention and is not considered to be known as such, which must be known to the general public prior to the application of the invention.

Disclosure of Invention

Technical problem to be solved

An object of an embodiment of the present invention is to provide a sputtering apparatus that achieves uniform film formation on a substrate by cutting off most of the film-forming material that enters the substrate along a path inclined at an angle to the normal of the substrate.

An object of an embodiment of the present invention is to provide a sputtering apparatus that achieves uniform film formation on a substrate corresponding to a change in a target over time.

Technical proposal for solving the technical problems

A sputtering apparatus according to an embodiment includes: a stage rotated in a state of supporting a substrate having a fine pattern; a target material opposite to the substrate; and a cutting member including a cutting body disposed between the stage and the target, and a through hole formed in the cutting body and separated from the target so as to pass at least a part of the film forming material that has traveled to the substrate.

When the workbench is observed from the target, the top point of the through hole is overlapped to the center of the substrate.

The through hole has a shape in which its width becomes gradually larger as it is farther from the apex.

The through holes are fan-shaped.

When the workbench is observed from the target, the edge of the through hole is far away from the edge of the substrate.

The rotation axis of the table passes through the center of the substrate.

The rotation axis of the workbench is far away from the point of the maximum plasma density in the target surface.

The point of maximum plasma density is overlapped with the through hole based on the direction parallel to the rotation axis of the workbench.

The sputtering apparatus further includes: and a driving unit that moves the cutting member in a direction parallel to the rotation axis of the table or in a direction intersecting the rotation axis of the table at right angles.

When the stage is observed from the target, a distance from the center of the substrate to the apex of the through hole increases during sputtering.

The cutting member further includes: and a cutting protrusion protruding upward from an edge of the cutting body.

The number of the through holes is plural, and the through holes are not communicated with each other.

The rotating shaft of the workbench passes through the plurality of through holes.

Effects of the invention

An embodiment of the present invention achieves uniform film formation on a substrate by severing a majority of the film-forming material that enters the substrate along a path that is inclined at an angle to the normal to the substrate.

An embodiment of the present invention achieves uniform film formation on a substrate corresponding to the change of the target over time.

Drawings

Fig. 1 is a side view conceptually showing a sputtering apparatus according to an embodiment.

Fig. 2 is a side view and a partially enlarged view conceptually showing a stage and a substrate according to an embodiment.

Fig. 3 is a plan view conceptually showing a cutting member and a substrate according to an embodiment.

Fig. 4 is a plan view conceptually showing the cutting member and the substrate according to an embodiment, showing a state after the cutting member is moved toward one direction.

Detailed Description

The embodiments are described below by way of example only with reference to the accompanying drawings. When reference is made to the constituent elements of each drawing, the same constituent element is indicated by the same drawing as far as possible even if it is indicated in different drawings. In the process of describing the embodiments, when specific descriptions of known configurations and functions are used to prevent understanding of the embodiments, detailed descriptions thereof are omitted.

In the description of the constituent elements of the embodiment, terms such as first, second, A, B, (a) and (b) can be used. The above terms are used only to distinguish the constituent element from other constituent elements, and are not used to define the essence, order or sequence of the respective constituent elements. When any component is described as being "connected", "coupled", or "contacting" with other components, the component can be directly connected or connected to the other components, or the other components can be "connected", "coupled", or "contacted" between the components.

The same names are used in other embodiments for the constituent elements having the same functions as those included in any one embodiment. In the case of no mention of the contrary, the description recorded in any one embodiment can be applied to other embodiments, and detailed description is omitted in the scope of the claims.

Referring to fig. 1, the sputtering apparatus 1 may include a chamber 91, a target 92, a magnet assembly 93, a substrate S, a table 11, a cutting member 12, and a driving section 13.

The chamber 91 can accommodate the constituent elements of the sputtering apparatus 1. A positive voltage can be applied to the chamber 91. The chamber 91 to which the positive voltage is applied can prevent the film-forming material as cations separated from the target 92 from adhering to the inner wall of the chamber 91. The chamber 91 can prevent the film-forming material from traveling to the outside of the cutting member 12. For example, when the stage 11 is observed from the target 92, the substrate S and the stage 11 can be observed only through the through hole 121a, and other areas are blocked by the chamber 91 and the cutting member 12.

The target 92 is composed of a material to be film-formed on the substrate S. The target 92 can be opposite to the substrate S. The target 92 can be a metallic material or an alloy including a metallic material. The target 92 can also be a metal oxide, a metal nitride, or a dielectric. For example, the target 92 may include a material containing an element selected from Mg, ti, zr, V, nb, ta, cr, mo, W, pd, pt, cu, ag, au, zn, al, in, C, si, sn, and the like as a main component.

The magnet assembly 93 can include an electromagnet or a permanent magnet. The magnet assembly 93 forms a fixed magnetic field of a certain strength on the target 92 by an electromagnet or a permanent magnet. By fixing the magnetic field and the electromagnetic field applied from the outside, plasma can be formed on the surface of the target 92. The density of the plasma is determined by the fixed magnetic field and the applied electromagnetic field. Sputtering occurs on the surface of the target 92 by the plasma, and the film-forming material separated from the target 92 flows toward the substrate S.

The substrate S can be a substrate for manufacturing semiconductors, FPDs (LCDs, OLEDs, etc.), solar cells, and the like. The substrate S can be a wafer having a plurality of fine patterns. When the substrate S is a wafer having a plurality of fine patterns, uniform film formation of the film forming material on the substrate S is an important factor for improving the quality of the substrate S.

The stage 11 is used to fix the substrate S so that the film-forming material can uniformly form a film on the substrate 20. After the substrate S is mounted on the stage 11, the edge of the substrate S is fixed by a fixing means or the like, or the substrate S is fixed after the substrate S. The table 11 is rotatable about a rotation axis A1. The rotation axis A1 of the stage 11 passes through the center of the substrate S.

The rotation axis A1 of the stage can be distant from the point of highest plasma density in the surface of the target 92. In other words, the rotation axis A1 of the stage is distant from the auxiliary line A2 extending vertically from the point of the surface of the target 92 where the plasma (plasma) density is highest with respect to the target 92. For example, based on fig. 1, the point of highest plasma density in the surface of the target 92 can be formed in the center. The film forming material at the point of highest plasma density in target 92 is consumed more rapidly than at other points. Thus, more film-forming material is separated at the point where the plasma density is highest. For example, the point at which the plasma density is highest may be a point at which the vertical magnetic field of the magnetic field applied from the magnet assembly 93 is 0.

The point of the surface of the target 92 where the plasma density is highest can overlap the through hole 121a with reference to the direction parallel to the rotation axis A1 of the stage 11. In other words, the auxiliary line A2 can pass through the through hole 121a. The through-hole 121a is located below the position where the film forming material is most active in the target 92, and thus the film forming material can be efficiently formed on the substrate S.

The cutting member 12 can cut at least a portion of the film forming material that is separated from the target 92 and travels toward the substrate S. In other words, the cutting member 12 cuts off a part of the film forming material that is separated from the target 92 and travels toward the substrate S, and passes through the part. The cutting member 12 can include a cutting body 121, a through hole 121a, and a cutting protrusion 122.

The cutting body 121 can be disposed between the stage 11 and the target 92. The cutting body 121 is disposed on the substrate S and cuts off a part of the film forming material traveling toward the substrate S. The cutting body 121 has a plate shape. During sputtering, the film-forming material can be deposited on the surface of the cutting body 121. The film-forming material can include a first film-forming material P1 that enters the surface of the substrate S in a path side by side with the normal of the substrate S; and a second film-forming material P2 that enters the surface of the substrate S in a path inclined to the normal line of the substrate S. The cutting body 121 can cut most of the second film-forming material P2. The cutting body 121 can pass through the entire first film-forming material P1 that has entered the through hole 121a. As a result, the amount of the first film forming material P1 is larger than the amount of the second film forming material P2 in the film forming material formed on the surface of the substrate S, and the film is uniformly formed on the surface of the substrate S. The cutting body 121 can be not rotated. For example, the cutting body 121 can be parallel to the substrate S.

The through hole 121a can be formed in the cutting body 121. The through hole 121A allows at least a part of the film forming material separated from the target 92 and entering the substrate S to pass through. During rotation of the stage 11, the position of the through hole 121a with respect to the surface of the substrate S continuously changes. Thus, a film is uniformly formed on the surface of the substrate S as a whole.

The cutting protrusion 122 may be formed to protrude upward from an edge portion of the cutting body 121. The cutting protrusion 122 can prevent the film forming material from penetrating into the space between the cutting body 121 and the chamber 91.

The driving unit 13 can move the cutting member 12 in a direction intersecting the rotation axis A1 of the table 11 at right angles.

Referring to fig. 2, the table 11 is rotatable about a rotation axis A1. The film-forming material P forms a film on the substrate S mounted on the stage 11. The rotation of the stage 11 can continuously change the region of the substrate S exposed to the target, thereby uniformly depositing a film on the substrate S.

Fig. 3 is a plan view conceptually showing a cutting member and a substrate according to an embodiment, and fig. 4 is a plan view conceptually showing the cutting member and the substrate according to an embodiment, showing a state after the cutting member is moved in one direction.

Referring to fig. 3 and 4, the driving unit 13 can move the cutting member 12. For example, the driving section 13 can move the cutting member 12 in a direction parallel or perpendicular to the substrate S. The driving unit 13 moves the cutting member 12 based on at least one of the metal type of the target, the distance between the target and the substrate, and the magnetic field of the magnet assembly.

The driving unit 13 can move the cutting member 12 according to irregular consumption of the target surface. For example, the target can be irregularly consumed according to the intensity of the surrounding plasma. The driving unit 13 moves the cutting member 12 based on the consumption amount of the target material, thereby uniformly forming a film on the substrate S.

The through holes 121a can expose the substrate S to the target in a fan shape. For example, the through hole 121a can be a figure whose width gradually becomes larger as it goes away from the apex 1211 a. For example, the through hole 121a can be fan-shaped.

When the stage is observed from the target, the substrate S may include a first region S1 exposed to the outside through the through hole 121a, a second region S2 shielded by the cutting member 12, and a third region S3 shielded by a chamber (not shown) (see fig. 1).

For example, in the initial stage of sputtering, when the stage is observed from the target, the apex 1211a of the through hole 121a can overlap to the center of the substrate S. During sputtering, the driving section 13 can move the cutting member 12, thereby increasing the distance d from the center of the substrate S to the apex 1211a of the through hole 121a. Based on the above operation, a relatively large amount of film-forming material is prevented from forming a film to the center of the substrate S, and uniform film formation is achieved.

When the stage is observed from the target, the peripheral edge 1212a of the through hole 121a is distant from the edge portion of the substrate S. In other words, a non-overlapping region a exists between the cutting body 121 and the substrate S. The region a can prevent the deposition material deposited on the cutting member 12 from falling onto the substrate S.

In fig. 3 and 4, the case where the cutting member 12 has one through hole 121a is shown, but the present invention is not limited thereto. For example, the cutting member may have a plurality of through holes (not shown) that do not communicate with each other. The respective areas of the plurality of through holes can be smaller than the illustrated area of one through hole 121a, but the sum of the areas of the plurality of through holes can be substantially similar to the area of one through hole 121a. The film forming material traveling from the target to the substrate S can be a sum of straight line components and diagonal line components, and the cutting member 12 including the plurality of through holes can effectively cut off the diagonal line components of the film forming material. In other words, the cutting member including the plurality of through holes can pass diagonal line components of the film forming material relatively less than the cutting member having one through hole.

On the other hand, the rotation axis A1 (see fig. 1) of the table 11 (see fig. 1) can pass through between the plurality of through holes. For example, one vertex of each of the plurality of through holes contacts the rotation axis A1, and the plurality of through holes are arranged at mutually different positions with respect to the rotation axis A1. With this structure, the cutting member 12 having the plurality of through holes can expose the center portion of the substrate S to the target for a relatively long time, thereby improving bottom coverage (bottom coverage) of the center portion of the substrate S.

In summary, the embodiments are described with limited figures, and a person of ordinary skill in the art can make various modifications and variations based on the description. For example, the described techniques may be performed sequentially in a different order than the described methods, and/or constituent elements of the described systems, structures, devices, circuits, etc. may be combined or combined in a different manner than the described methods, or substituted or replaced with other constituent elements or equivalents.

Claims

1. A sputtering apparatus is characterized in that,

comprising the following steps:

a stage rotated in a state of supporting a substrate having a fine pattern;

a target material opposite to the substrate;

a cutting member including a cutting body disposed between the stage and the target, and a through hole formed in the cutting body and separated from the target so as to pass at least a part of the film forming material traveling to the substrate and having a fan shape; and

a driving unit for moving the cutting member to a direction parallel to the rotation axis of the table or a direction intersecting the rotation axis of the table at right angles,

and taking the direction of observing the workbench from the target as a reference, wherein part of the area of the through hole is not overlapped with the substrate, and the size of the area where the through hole and the substrate are not overlapped is increased during sputtering.

2. The sputtering apparatus according to claim 1, wherein,

3. The sputtering apparatus according to claim 1, wherein,

the rotation axis of the table passes through the center of the substrate.

4. The sputtering apparatus according to claim 3, wherein,

5. The sputtering apparatus according to claim 4, wherein,

6. The sputtering apparatus according to claim 1, wherein,

the cutting member further includes:

and a cutting protrusion protruding upward from an edge of the cutting body.

7. The sputtering apparatus according to claim 1, wherein,

a plurality of the through holes are provided, and the plurality of through holes are not communicated with each other.

8. The sputtering apparatus according to claim 7, wherein,