JP2002080963A - Sputtering system and thin film deposition process using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sputtering system and a process therefor by which the distribution of the film thickness and the distribution of the film quality in a sputter film are uniformized by making plasma and light generated in the process of sputtering hard to arrive at a substrate, and further, the film can be deposited on a photoresist without changing the properties of the photoresist. SOLUTION: 1. In this sputtering system, the space between a target and a substrate is provided with a diaphragm having plural opening holes, the diaphragm is grounded on a vacuum chamber, or an electric power feeding means for applying voltage on the diaphragm is provided. 2. In this sputtering process, plasma and light generated in the process of sputtering are cut off, and the amounts of plasma and light arriving at a substrate are controlled, or bias voltage with a potential reverse to the target is fed to the diaphragm, and the amount of plasma arriving at the substrate is controlled to deposit a film on a photoresist.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a sputtering apparatus and a method for forming a thin film using the same.

[0002]

2. Description of the Related Art In a conventional sputtering apparatus, plasma formed by discharge collides with a target, and atoms ejected from the target are deposited on a substrate to form a film. At this time, the plasma generated by the discharge or light generated by the discharge fills the chamber of the sputtering apparatus, and interacts not only with the target but also with the substrate. Conventionally, sputtering is performed assuming that the substrate is not affected by plasma or light.However, when a film that is affected by plasma or light is formed on the substrate and sputtering is performed on the film, there is a problem. .

[0003] The problem of the prior art will be described with reference to FIG. FIG. 2 shows a conventional method in which two layers of photoresist are formed, and only the upper photoresist is exposed with weak light, and the upper and lower photoresists are exposed with strong light. This is a process technique using a photoresist to form latent images having different depths, that is, different shapes.
An optically transparent inorganic film is required between the photoresists to form a layer. When such an inorganic film is formed by sputtering, the underlying photoresist is affected by plasma or light during the sputtering of the inorganic film, and the physical properties of the photoresist change.

When an inorganic film is formed by a normal sputtering apparatus having nothing between a target and a substrate on which a photoresist is formed, the photoresist is damaged by plasma, and is developed even when irradiated with light. The shape will not be formed. This has the effect that the photoresist is exposed to light during sputtering and a latent image is formed on the entire photoresist, but in the case of a normal sputtering apparatus, the influence of the above plasma damage is greater. As described above, in the case where the inorganic film is formed by a normal sputtering apparatus using two layers of photoresist, even if the photoresist of the upper and lower layers is exposed to strong light, the photoresist of the lower layer is damaged. Therefore, a deep shape cannot be formed.

[0005] As far as the inventor is aware, there is no document that discloses a solution to the above problem. Of course, it is known prior to the present application to provide such a partition plate during sputtering. For example, Japanese Patent Application Laid-Open No. 11-509049 discloses that sputtered particles are formed so that a uniform film is formed in a contact hole of a substrate. Among them, an invention using a collimator that has a predetermined incident angle and blocks arrival at the substrate surface is disclosed, but the present invention has a different effect from the present invention, and the collimator also has a partition plate of the present invention. Have different structures such as the aspect ratio. Further, Japanese Unexamined Patent Publication No.
No. 286777 also discloses an invention using a partition member, but this invention also aims at controlling negative ions in reactive sputtering, and has a different effect from the present invention. In addition to the partition member, a conductive member having an ion assist effect (an effect of positively attracting negative ions to the substrate surface) is provided between the partition member and the substrate, and the configuration of the device is different from that of the present invention. It is.

[0006]

According to the first aspect of the present invention,
It is an object of the present invention to provide a sputtering apparatus that makes it difficult for plasma and light generated during sputtering to reach a substrate. A second object of the present invention is to provide a sputtering apparatus that makes it difficult for plasma generated during sputtering to reach a substrate, further than the sputtering apparatus of the first embodiment. It is an object of the present invention to provide a sputtering apparatus that makes it difficult for plasma generated during sputtering to reach a base while securing a sputtering rate. It is an object of the present invention to provide a sputtering apparatus capable of making the film thickness distribution of a sputtered film uniform. It is an object of the present invention to provide a sputtering apparatus having a high sputtering rate. It is an object of the present invention to provide a sputtering apparatus capable of making the film quality distribution of a sputtered film uniform. Claim 11
An object of the present invention is to provide a sputtering method capable of forming a film on a photoresist without changing the properties of the photoresist.

[0007]

Means for Solving the Problems The above problems are as follows:
The invention 12) (hereinafter referred to as Inventions 1 to 12) is solved. 1) In a vacuum chamber, a substrate holding unit for holding a substrate, a target holding unit for holding a target, a sputtering gas supply unit for supplying a sputtering gas for sputtering the target into a reaction chamber,
In a sputtering apparatus provided with power supply means for supplying electric power for causing a discharge between a target and a substrate, a partition plate having a plurality of openings is provided between the target and the substrate, and the partition plate has conductivity. And a partition plate is grounded to a vacuum chamber. 2) a substrate holding means for holding a substrate, a target holding means for holding a target, a sputtering gas supply means for supplying a sputtering gas for sputtering the target into the reaction chamber, in a vacuum chamber;
In a sputtering apparatus provided with power supply means for supplying electric power for causing a discharge between a target and a substrate, a partition plate having a plurality of openings is provided between the target and the substrate, and the partition plate has conductivity. A partition plate provided in a state of being electrically insulated from the vacuum chamber, and having a power supply means for applying a voltage to the partition plate. 3) Aspect ratio of opening of partition plate (depth / opening diameter)
Is less than 0.3, the sputtering apparatus according to 1) or 2). 4) An opening is provided only in a region of the partition plate facing the target, and the target and the base are completely spatially separated by the partition plate. 1) to 3)
The sputtering apparatus according to any one of the above. 5) The sputtering apparatus according to any one of 1) to 4), wherein the opening ratio of the openings is less than 50%. 6) The aperture ratio of the partition plate in the region facing the erosion center of the target is small so that the film thickness distribution of the film deposited on the substrate is constant and the influence of the plasma on the substrate is constant. The opening ratio of the partition plate is set to increase as the distance from the region facing the erosion center increases. 7) The sputtering apparatus according to any one of 1) to 6), wherein a base holding means for holding the base is rotatably provided. 8) The sputtering apparatus according to any one of 1) to 7), wherein a partition plate having a plurality of openings is rotatably provided. 9) The sputtering apparatus according to any one of 1) to 8), wherein a plurality of sputter gas supply ports are arranged around the target. 10) The sputtering apparatus according to any one of 1) to 9), further comprising a reaction gas supply unit for supplying a reaction gas, wherein a plurality of reaction gas supply ports are arranged around the base. . 11) The apparatus according to any one of 1) and 3) to 10), wherein plasma and light generated during sputtering are shielded, and the amount of plasma and light reaching the substrate is controlled. A sputtering method comprising forming a film on the formed photoresist. 12) The apparatus according to any of 2) to 10),
By supplying a bias voltage having a potential opposite to that of the voltage supplied to the target to the partition plate, reducing the speed of plasma generated during sputtering and controlling the amount of plasma reaching the substrate, a photo formed on the substrate. A sputtering method comprising forming a film on a resist.

Hereinafter, the components of the present invention 1 to 12 will be described in detail. FIG. 1 shows a configuration diagram of the present invention 1.
A partition plate with an opening is provided between the target and the base. The partition plate is made of a conductive material and is grounded to the vacuum chamber. A sputtering gas is introduced into the vacuum chamber, power is supplied to the target, and plasma is generated. If necessary, a reactive gas is introduced into the vacuum chamber. At this time, in FIG.
Although r (argon) is used, a DC power supply is used for the target, and O ₂ (oxygen) is used for the reactive gas, the present invention is not limited to this example. A part of the generated plasma is deprived of the electric charge of the plasma by the partition plate grounded to the vacuum chamber, and the amount of the plasma reaching the base is reduced. The light generated by the plasma also
The amount of light that reaches the base by being blocked by the partition plate is reduced.

The characteristics of the photoresist are different from each other. In the case of a photoresist which is not damaged by the plasma reduced by the structure of the present invention 1 and is not exposed by the light reduced by the structure of the present invention 1, the present invention The configuration of 1 is sufficient. However, depending on the type of photoresist, it may be affected by plasma damage or light exposure. When the plasma damage is large, the lower layer photoresist is damaged as in the conventional example, so that a deep shape cannot be formed. When the light exposure is strong, a shallow shape cannot be formed because the underlying photoresist is exposed.

The second aspect of the present invention is a sputtering apparatus which can be applied to a photoresist having a problem in the first aspect of the invention and can reduce the amount of plasma reaching the substrate more than the first aspect of the invention. . In the case of the present invention 1, when the plasma collides with the partition plate, the charge is neutralized, but the plasma that has passed through the aperture reaches the base. On the other hand, in the present invention 2, the partition plate is not grounded to the vacuum chamber, but is connected to a power supply so that the potential of the partition plate can be changed. Then, by applying an electric potential to the partition plate, an electric field having the same potential as the partition plate is formed in the space around the partition plate, and when the plasma reaches the electric field, the plasma of the electric charge opposite to the electric field is neutralized, and the electric field is Plasma of the same charge is repelled. As a result, apparently, the depth of the aperture of the partition plate becomes deeper by the thickness of the electric field, the aspect ratio of the aperture becomes larger, and the plasma becomes difficult to pass through (however, the aperture of the partition plate becomes smaller). There is also some passing plasma.) However, the particles of the sputtered target are not affected by the electric field and therefore pass through the aperture by the same amount as in the present invention 1. Therefore, the second invention has the same sputtering rate as the first invention, but has a large amount of shielded plasma.

Next, in the sputtering apparatus of the present invention 1 or 2, since the partition plate is located between the target and the base, the particles and plasma of the sputtered target enter the opening perpendicularly to the opening. Although it can pass through the aperture, when it enters obliquely, it cannot collide with the side surface of the aperture and pass through, and the sputtering rate always drops. The amount of light passing at an oblique incidence is determined by the aspect ratio (depth / opening diameter) of the opening. The amount of plasma passing can also be controlled by the potential of the partition plate of the present invention 2 other than the aspect ratio. However, the amount of particles passing through the sputtered target greatly depends on the aspect ratio. Therefore, in the present invention 3, by setting the aspect ratio of the aperture to less than 0.3, it is possible to pass the target particles which are obliquely incident on the aperture by 73 degrees. The smaller the aspect ratio is, the more preferable it is because the larger the obliquely incident target particles can pass, the more preferable the aspect ratio is (see Table 1 in [Example]).

Next, according to the first and second aspects of the present invention, although the plasma can be sufficiently reduced by the partition plate, the light is reflected from the walls on both sides of the partition plate. Will be reached. Some photoresists are exposed by reflected light and others are not exposed. Therefore, when a two-layer photoresist is formed using the exposed photoresist as a lower layer, the lower photoresist is exposed. Therefore, a shallow shape cannot be formed. Therefore, in the present invention 4, the size of the partition plate is set to such a size that the target and the base are completely spatially separated in the vacuum chamber, an opening is provided only in a region facing the target, and the other portions are opened Is provided, so that the reflected light does not reach the substrate as in the first aspect of the invention.

Next, in the sputtering apparatus according to the present invention 1 or 2, the larger the aperture ratio (the ratio of the apertures), the more plasma and light pass through the apertures. Therefore, in order to reduce the influence of plasma and light, it is necessary to suppress the aperture ratio to a certain level or less. From this viewpoint, in the present invention 5, the porosity is 50%.
If less than, plasma and light are sufficiently reduced. If the aperture ratio is 50% or more, plasma or light easily passes through the apertures, which undesirably affects the substrate (see Table 2 in the section of [Example]).

Next, the sputtering rate of the strongest part of the plasma (erosion center) is large, and the further away from the erosion center, the lower the plasma intensity and the lower the sputtering rate. Therefore, when the opening of the partition plate is at a certain ratio, the plasma passing through the opening in the region facing the erosion center and the sputtered target particles are large, and the plasma passing through the portion distant from the region facing the erosion center is large. In addition, the number of sputtered target particles is reduced, and a distribution occurs in the film thickness deposited on the substrate, and a distribution also occurs due to the influence of plasma on the substrate. Therefore, in the partition plate according to the sixth aspect of the present invention, the opening ratio of the opening in the region facing the erosion center is adjusted so that the film thickness distribution of the film deposited on the base is constant and the influence of the plasma on the base is constant. And the porosity increases as the distance from the erosion center increases. Since it is difficult to show the value of the porosity, since it depends on the sputtering apparatus, it is usually difficult to indicate the porosity in a region opposed to the erosion center.
In many cases, it is less than 0% and about 45 to 50% at the part farthest from the erosion center.

Next, the sputtered target particles pass through the openings of the partition plate and deposit on the base.
The distribution of apertures is reflected in the film thickness distribution on the substrate. Therefore, in the present invention 7, by rotating the portion where the substrate is fixed, and in the present invention 8, by rotating the partition plate, the distribution of the film thickness deposited on the respective substrates is made constant. ing.

Next, the present inventions 1, 2, and 4 (especially the present invention 4)
In this case, the sputtering gas cannot be introduced uniformly around the target because of the partition plate. As a result, the sputter rate decreases due to the decrease in the plasma density, and the film thickness distribution becomes uneven due to the uneven plasma distribution. Therefore, in the ninth aspect of the invention, a plurality of sputter gas supply ports are arranged around the target so that the supply amount of the sputter gas is not affected by the partition plate.
Therefore, a decrease in plasma density and non-uniformity of plasma distribution do not occur. In the tenth aspect of the present invention, a plurality of reactive gas supply ports are arranged around the base so that the supply amount of the reactive gas is not affected by the partition plate. Therefore, non-uniformity of the reactive gas distribution does not occur.

Next, a photoresist is formed on the substrate,
When a sputtered film is formed thereon, it is necessary to change the amount of reduction in plasma or light depending on the type of photoresist. Therefore, in the present invention 11, depending on the shape of the partition plate (aspect ratio of aperture, aperture ratio, size of partition plate, etc.),
The amount of plasma or light reduced by the partition is controlled so that the photoresist is not affected by the plasma or light.
Similarly, in the twelfth aspect of the invention, the speed of the plasma is reduced by changing the voltage applied to the partition plate, and the amount of plasma passing through the partition plate is controlled so that the photoresist is not affected by the plasma.

[0018]

The present invention will be described below in more detail with reference to examples and comparative examples, but the present invention is not limited to these examples.

Example 1 A metal plate having a thickness of 1 mm and a diameter of 5 in the distribution shown in FIG.
mm holes are provided uniformly. In this case, the aspect ratio becomes 0.2 and the porosity becomes 39%. A partition plate having such an opening is made approximately the same size as the area of the target, and is grounded in a vacuum chamber and provided between the base and the target. Reactive DC magnetron sputtering with O ₂ is performed using In ₂ O ₃ as a target. A low-sensitivity photoresist A having a predetermined thickness is formed on the substrate, and about 1 Å of In ₂ O ₃ is formed on the photoresist A.
00 ° is formed. At this time, the thickness distribution of In ₂ O ₃ is made constant by the rotation of the base or the rotation of the partition plate. On the thus sputtered In ₂ O ₃ , a low-sensitivity photoresist A is formed again to a predetermined thickness. After forming a latent image on the photoresist with strong light and weak light, development is performed to form a deep rectangular pattern and a shallow rectangular pattern.

Comparative Example 1 A metal plate having a thickness of 1 mm and a diameter of 5 m according to the distribution shown in FIG.
m holes are provided uniformly. In this case, the aspect ratio becomes 0.2 and the porosity becomes 39%. A partition plate having such an opening is made approximately the same size as the area of the target, and is grounded in a vacuum chamber and provided between the base and the target. Using SiO ₂ as a target, performing reactive RF magnetron sputtering by _{O 2.} The on a substrate have been formed to a thickness photoresist A is in a predetermined low sensitivity, the SiO ₂ about on the photoresist A 100
Å Form. At this time, the rotation of the base or the rotation of the partition plate keeps the thickness distribution of SiO ₂ constant. A low-sensitivity photoresist A is formed again on the sputtered SiO ₂ to a predetermined thickness. Even if a latent image is formed on the photoresist with strong light and weak light and then development is performed, a shallow rectangular pattern can be formed, but a deep rectangular pattern cannot be formed. The reason why a deep rectangular pattern could not be formed in this comparative example is that in Example 1, the plasma density was low due to DC sputtering, whereas in the present example, the plasma density was high due to RF sputtering, and the plasma was sufficiently generated by the partition plate. Is not reduced, and the photoresist A is damaged by the plasma.

Example 2 A metal plate having a thickness of 1 mm and a diameter of 5 mm according to the distribution shown in FIG.
mm holes are provided uniformly. In this case, the aspect ratio becomes 0.2 and the porosity becomes 39%. A partition plate having such an opening is made approximately the same size as the area of the target, and is provided between the base and the target separately from the vacuum chamber so that power can be supplied from the outside. Using SiO ₂ as a target, performing reactive RF magnetron sputtering by _{O 2.} A low-sensitivity photoresist A having a predetermined thickness is formed on the substrate, and SiO ₂ is formed on the photoresist A at about 100 °. At this time, the rotation of the base or the rotation of the partition plate keeps the thickness distribution of SiO ₂ constant. Further, a voltage having a phase opposite to that of the RF voltage applied to the target is applied to the partition plate, and the amount of plasma passing through the partition plate is reduced as compared with Comparative Example 1. A low-sensitivity photoresist A is formed again on the sputtered SiO ₂ to a predetermined thickness. After forming a latent image on the photoresist with strong light and weak light, development is performed to form a deep rectangular pattern and a shallow rectangular pattern.

Comparative Example 2 A metal plate having a thickness of 1 mm and a diameter of 5 mm according to the distribution shown in FIG.
mm holes are provided uniformly. In this case, the aspect ratio becomes 0.2 and the porosity becomes 39%. A partition plate having such an opening is made approximately the same size as the area of the target, and is grounded in a vacuum chamber and provided between the base and the target. Reactive DC magnetron sputtering with O ₂ is performed using In ₂ O ₃ as a target. A high-sensitivity photoresist B is formed to a predetermined thickness on the substrate, and about 1 Å of In ₂ O ₃ is formed on the photoresist B.
00 ° is formed. At this time, the thickness distribution of In ₂ O ₃ is made constant by the rotation of the base or the rotation of the partition plate. A photoresist B having a high sensitivity is formed again on the sputtered In ₂ O ₃ to a predetermined thickness. Even if a latent image is formed on the photoresist with strong light and weak light and then developed, a deep rectangular pattern can be formed, but a shallow rectangular pattern cannot be formed. The reason why a shallow rectangular pattern could not be formed in this comparative example is that the low-sensitivity photoresist A in Example 1 was not exposed to light during sputtering, whereas the high-sensitivity This is because the photoresist B was exposed to light during sputtering, and even if an attempt was made to form a shallow rectangle, the surface between the photoresist B and the photoresist could not be formed flat because the underlying photoresist B was exposed.

Example 3 A metal plate having a thickness of 1 mm and a diameter of 5 mm according to the distribution shown in FIG.
An opening of mm is provided in an area of the same size as the area of the target so that the target and the base can be completely spatially separated. In this case, the aspect ratio becomes 0.2 and the porosity becomes 39%. Since the target and the substrate are completely spatially separated, the flow of the sputtering gas and the reactive gas is poor, and the respective gases do not spread evenly in the vacuum chamber. Since the sputtering gas should spread evenly around the target and the reactive gas around the substrate,
A plurality of sputter gas supply ports are provided around the target, and a plurality of reactive gas supply ports are provided around the substrate. With such a sputtering apparatus, In ₂ O is used as a target.
₃ to perform reactive DC magnetron sputtering with O ₂ . High sensitivity photoresist B on the substrate
Is formed to a predetermined film thickness.
About 100 ° of In ₂ O ₃ is formed thereon. At this time, the thickness distribution of In ₂ O ₃ is made constant by the rotation of the base or the rotation of the partition plate. Since the partition plate completely spatially separates the target and the substrate, the photoresist B is not irradiated except for light leaking from the opening. A photoresist B having a high sensitivity is formed again on the sputtered In ₂ O ₃ to a predetermined thickness. After forming a latent image on the photoresist with strong light and weak light, development is performed to form a deep rectangular pattern and a shallow rectangular pattern.

Embodiment 4 In Embodiments 1, 2, and 3, the sizes of the apertures in the partition plates are all the same. However, since the plasma density during sputtering is large at the erosion center, the amount of target particles and plasma passing through the opening in the region facing the erosion center increases. Example 1,
In the deep rectangular pattern and the shallow rectangular pattern formed in steps 2 and 3, the depth of the deep rectangular pattern is slightly shallower in the region facing the erosion center.
For example, in the case of the third embodiment, when the photoresist B is formed at about 3000 ° each, the depth of the deep rectangle becomes about 0.58 μm in the area facing the erosion center and in the area farthest from the area facing the erosion center. It is about 0.6 μm. Although this difference is small, it becomes a problem when a precise pattern depth is required.

Therefore, in the present embodiment, a metal plate having a thickness of 1 mm is used as a partition plate, the diameter of the opening in the area facing the erosion center is set to 3.5 mm, and the opening is made farther from the area facing the erosion center. The diameter of the opening is finally set to 5.5 mm. At this time, the aspect ratio is 0.29 to 0.18, and the porosity is 19% to 48%.
become. The partition plate is sized to completely separate the target and the substrate spatially. Since the target and the substrate are completely spatially separated, a plurality of sputter gas supply ports are provided around the target and a plurality of reactive gas supply ports are provided around the substrate. In such a sputtering apparatus, reactive DC magnetron sputtering using O ₂ is performed using In ₂ O ₃ as a target. The substrate photoresist B highly sensitive have been formed to a predetermined thickness, about 100Å of In ₂ O ₃ on the photoresist B
Form. At this time, the film thickness distribution of In ₂ O ₃ is made constant by the rotation of the base or the rotation of the partition plate. Further, since the partition plate completely spatially separates the target and the base, the photoresist B except for the light leaking from the opening is used.
Do not irradiate. In ₂ thus sputtered
A high-sensitivity photoresist B is again formed on O ₃ to a predetermined thickness. After a latent image is formed on the photoresist with strong light and weak light, development is performed to form a deep rectangular pattern and a shallow rectangular pattern. At this time, no distribution occurs at the depth of the deep rectangular pattern.

In the embodiment shown [0026] above, a transparent film such as _In 2 _{O 3} and SiO ₂ was formed by sputtering on the photoresist, a photoresist is formed thereon _In 2 _{O 3} and SiO _2, deep rectangular An example of forming a shallow rectangular pattern with the above pattern is shown. However, the present invention is not limited to these materials, and can be similarly applied to various metal films, oxide films, nitride films, and the like, without changing the properties of the photoresist on the photoresist. Various sputtered films can be formed.

Example 5, Example 6, Comparative Example 3 An opening having an opening diameter and an aspect ratio shown in the following Table 1 was provided on a metal plate having a thickness of 1 mm, and the base was rotated while rotating.
Using In ₂ O ₃ as the target, the reactivity D by O ₂
C magnetron sputtering was performed to examine the film thickness distribution on the substrate. Table 1 shows the results.

[Table 1] As can be seen from Table 1, in Example 5 or Example 6 in which the aspect ratio was 0.2 or 0.28, there was a slight difference between the film thickness just above the target and the film thickness at the center of the substrate.
In Comparative Example 3 having an aspect ratio of 0.33, the difference is clearly larger. Since the film at the center of the substrate is formed of target particles passing obliquely through the partition plate, target particles can pass through the partition plate up to an aspect ratio of about 0.28, but hardly pass through the partition plate at about 0.33. Will be. Therefore, it is preferable that the aspect ratio be less than 0.3.

Example 7, Example 8, Comparative Example 4 A metal plate having a thickness of 1 mm was provided with openings according to the distribution shown in FIG. 3, and the opening diameter and the opening ratio of the openings are shown in Table 2 below. The damage of the photoresist 2 was examined using the partition plate as shown and the sample having the layer configuration shown in FIG.

[Table 2] As can be seen from Table 2, in Comparative Example 4 in which the porosity was 56%, the pattern depth was about 650 ° and the photoresist 2 was damaged by the sputtering of the In ₂ O ₃ film. Is not formed. On the other hand, in Example 7 or Example 8 in which the porosity is 48% or 39%, the damage is clearly reduced, and a pattern is formed up to the base surface. Therefore, it is preferable that the porosity is less than 50%.

[0029]

According to the first aspect of the present invention, by providing a partition plate having an opening between the target and the substrate, it is possible to shield plasma and light generated during sputtering and reduce damage to the substrate. it can. In the second aspect of the present invention, by applying a voltage to the partition plate having an opening between the target and the substrate, the speed of plasma generated during sputtering can be reduced, and damage to the substrate can be reduced. In the third aspect of the present invention, by setting the aspect ratio of the opening of the partition plate to less than 0.3, it is possible to shield plasma and light generated during sputtering without lowering the sputtering rate.

In the present invention 4, the target and the base are completely separated spatially in the vacuum chamber by the partition plate, and the opening is provided only in the region facing the target. By setting the opening ratio of the openings of the partition plate to less than 50%, plasma and light generated during sputtering can be shielded and damage to the base can be reduced in any of the inventions. According to the sixth aspect of the present invention, by reducing the porosity of the partition plate at the erosion center and increasing the porosity at other portions, the distribution of plasma and target particles passing through the holes becomes uniform, and damage to the plasma by the plasma on the substrate is reduced. The distribution or the thickness distribution of the sputtered film can be made constant. In the present invention 7, by rotating the part holding the base, and in the present invention 8, by rotating the partition plate, the thickness distribution of the sputtered film is kept constant in any of the inventions. Can be.

In the ninth aspect of the present invention, by providing a plurality of sputter gas supply ports around the target, the plasma distribution becomes uniform.
By providing a plurality of reactive gas supply ports around the substrate, the distribution in which the target particles react with the reactive gas on the substrate becomes uniform, so that in any invention, the thickness distribution of the sputtered film is kept constant. can do. Invention 1
In No. 1, the shape of the partition plate (the aspect ratio of the aperture,
Since the amount of plasma or light reaching the substrate is controlled by changing the aperture ratio, size, etc., the photoresist on the substrate can be prevented from being affected by the plasma or light. In the twelfth aspect of the invention, the voltage applied to the partition plate is set to a potential opposite to the voltage applied to the target, so that the voltage applied to the partition plate can be changed to control the plasma speed.
The photoresist on the substrate can be protected from plasma.

[Brief description of the drawings]

FIG. 1 is a diagram showing a configuration of a sputtering apparatus of the present invention.

FIG. 2 is an explanatory diagram of a thin film forming method using a photoresist.

FIG. 3 is a diagram showing an arrangement of apertures provided in a partition plate.

FIG. 4 is a diagram showing a sample for examining the effect of the aperture ratio.

Claims (12)

[Claims] 1. A substrate holding means for holding a substrate in a vacuum chamber, a target holding means for holding a target, and a sputtering gas supply means for supplying a sputtering gas for sputtering a target into a reaction chamber. And a power supply means for supplying electric power for causing discharge between the target and the substrate, wherein a partition plate having a plurality of openings is provided between the target and the substrate, and the partition plate is electrically conductive. A sputtering apparatus comprising a material having a property and a partition plate grounded to a vacuum chamber. 2. A substrate holding means for holding a substrate in a vacuum chamber, a target holding means for holding a target, and a sputtering gas supply means for supplying a sputtering gas for sputtering a target into a reaction chamber. And a power supply means for supplying electric power for causing discharge between the target and the substrate, wherein a partition plate having a plurality of openings is provided between the target and the substrate, and the partition plate is electrically conductive. A partition plate made of a material having electrical properties, the partition plate being provided in an electrically insulated state from the vacuum chamber, and a power supply means for applying a voltage to the partition plate. 3. An aspect ratio (depth / depth) of an opening of a partition plate.
2. An aperture diameter of less than 0.3.
Or the sputtering apparatus according to 2. 4. The partition according to claim 1, wherein an opening is provided only in a region of the partition plate facing the target, and the target and the base are completely spatially separated by the partition plate. A sputtering apparatus according to any one of the above. 5. The sputtering apparatus according to claim 1, wherein the porosity of the holes is less than 50%. 6. The porosity of a partition plate in a region opposed to an erosion center of a target is set so that a film thickness distribution of a film deposited on a substrate becomes constant and an influence of plasma on the substrate becomes constant. The sputtering apparatus according to claim 1, wherein the opening ratio of the partition plate is set to be small, and the opening ratio of the partition plate is set to increase as the distance from the region facing the erosion center of the target increases. 7. A base holding means for holding a base is rotatably provided.
The sputtering apparatus according to any one of the above. 8. The sputtering apparatus according to claim 1, wherein a partition plate having a plurality of openings is rotatably provided. 9. The apparatus according to claim 1, wherein a plurality of sputter gas supply ports are arranged around the target.
The sputtering apparatus according to any one of the above. 10. The apparatus according to claim 1, further comprising a reaction gas supply means for supplying a reaction gas, wherein a plurality of reaction gas supply ports are arranged around the base. Sputtering equipment. 11. The apparatus according to claim 1, wherein plasma and light generated during sputtering are shielded to control the amount of plasma and light reaching the substrate. Forming a film on a photoresist formed on a substrate. 12. The apparatus according to claim 2, wherein a bias voltage having a potential opposite to the voltage supplied to the target is supplied to the partition plate to reduce the speed of plasma generated during sputtering. And forming a film on a photoresist formed on the substrate while controlling the amount of plasma reaching the substrate.