KR102490801B1 - Film forming apparatus and manufacturing apparatus of electronic device - Google Patents

Abstract

[PROBLEMS] To provide a film forming apparatus and an electronic device manufacturing apparatus capable of increasing the accuracy of a thin film forming position while employing a configuration in which film forming is performed while irradiating and etching a film forming material.
[Solution Means] A chamber 10, a film formation material discharge device 100 that performs a film formation operation by discharging film formation material toward the surface of a substrate held in the chamber 10, an etching beam irradiation device 200, A conveying device 300 for transporting the film forming material releasing device 100 and the etching beam irradiating device 200 is provided, and the film forming material releasing device 100 and the etching beam irradiating device 200 are provided by the conveying device 300. ), while carrying out a film forming operation and an etching operation on the substrate at the same time.

Description

Film forming apparatus and electronic device manufacturing apparatus {FILM FORMING APPARATUS AND MANUFACTURING APPARATUS OF ELECTRONIC DEVICE}

The present invention relates to a film forming apparatus and an electronic device manufacturing apparatus for forming a thin film on a substrate.

BACKGROUND OF THE INVENTION Conventionally, a technique of forming a thin film on a substrate by sputtering or the like is known. However, for example, when irregularities are formed on the surface of a substrate, a hollow space called a void may be formed inside a thin film to be formed. As a countermeasure against this, a technique is known in which sputtering and etching are repeatedly performed while transporting the substrate (see Patent Document 1). According to this technique, it becomes possible to form a thin film so as to follow the unevenness of the substrate surface.

However, in the above technique, in the case of a large substrate, positional displacement between the substrate and the mask tends to occur, and it is difficult to increase the accuracy of the position where the thin film is formed.

Patent Document 1: Japanese Unexamined Patent Publication No. 2012-67394

An object of the present invention is to provide a film forming apparatus and an electronic device manufacturing apparatus capable of increasing the accuracy of the formation position of a thin film while employing a configuration in which film formation is performed while irradiating and etching a film formation material.

The present invention adopts the following means in order to solve the above problems.

That is, the film forming apparatus of the present invention,

chamber,

a film formation material discharging device provided in the chamber and performing a film formation operation by discharging the film formation material toward the surface of the substrate held in the chamber;

an etching beam irradiation device provided in the chamber and performing an etching operation by irradiating an etching beam toward the surface of the substrate;

A conveying device for conveying the film forming material release device and the etching beam irradiation device is provided,

Simultaneously performing the film forming operation by the film forming material releasing device and the etching operation by the etching beam irradiating device with respect to the substrate while transporting the film forming material releasing device and the etching beam irradiating device by the conveying device. to be characterized

According to the present invention, since the film formation operation and the etching operation are performed respectively by the film formation material release device and the etching beam irradiation device transported while holding the substrate, the accuracy of the thin film formation position can be improved.

As described above, according to the present invention, the accuracy of the formation position of the thin film can be increased while employing a structure in which film formation is performed while irradiating and etching the film formation material.

1 is a schematic configuration diagram of the internal configuration of a film forming apparatus according to a first embodiment of the present invention viewed in plan view.
2 is a schematic configuration diagram of the internal configuration of the film forming apparatus according to the first embodiment of the present invention viewed in cross section.
3 is a schematic configuration diagram of the internal configuration of the film forming apparatus according to the first embodiment of the present invention viewed in cross section.
Fig. 4 is a diagram explaining the mechanism of the standby arm.
5 is a schematic configuration diagram of a film formation material discharge device according to Example 1 of the present invention.
6 is a schematic configuration diagram of a beam irradiation device for etching according to a first embodiment of the present invention.
7 is a schematic cross-sectional view showing an example of an electronic device.
8 is a main configuration diagram of a film forming apparatus according to a second embodiment of the present invention.
9 is a main configuration diagram of a film forming apparatus according to a third embodiment of the present invention.

EMBODIMENT OF THE INVENTION Hereinafter, the form for implementing this invention is illustratively demonstrated in detail based on an Example, referring drawings. However, the dimensions, materials, shapes, relative arrangements, and the like of the constituent parts described in this embodiment are not intended to limit the scope of the present invention only to these, unless otherwise specifically described.

(Example 1)

1 to 7, a film forming apparatus and an electronic device manufacturing apparatus according to the first embodiment of the present invention will be described. 1 is a schematic configuration diagram as viewed in plan (viewed from above) of the internal configuration of a film forming apparatus according to a first embodiment of the present invention. FIG. 2 is a schematic configuration diagram of the internal configuration of the film forming apparatus viewed in cross section according to the first embodiment of the present invention. More specifically, in FIG. 1, some components of the internal configuration viewed in the direction of an arrow V1 It is a cross-sectional drawing. FIG. 3 is a schematic configuration diagram of the internal configuration of the film forming apparatus viewed in cross section according to the first embodiment of the present invention. More specifically, in FIG. It is a cross-sectional drawing. Fig. 4 is a diagram explaining the mechanism of the standby arm, and a part of the standby arm is shown in a schematic cross-sectional view. 5 is a schematic configuration diagram of a film formation material discharge device according to a first embodiment of the present invention, (a) of the same figure is a schematic configuration diagram of the vicinity of the film formation material discharge device viewed from the front, and (b) of the same figure is It is AA sectional view in (a) of the same figure. 6 is a schematic configuration diagram of a beam irradiation apparatus for etching according to a first embodiment of the present invention, (a) of the same figure is a plan view of the beam irradiation apparatus for etching, and (b) of the same figure is (a) of the same figure. ) is a cross-sectional view of BB in 7 is a schematic cross-sectional view showing an example of an electronic device.

<Overall Configuration of Film Formation Equipment>

Referring to Figs. 1 to 3, the overall configuration of the film forming apparatus according to the present embodiment will be described. The film forming apparatus 1 according to the present embodiment includes a chamber 10 having a vacuum atmosphere therein, a film forming material discharging apparatus 100 provided in the chamber 10, and an etching device similarly provided in the chamber 10. It is provided with a beam irradiation device 200 and a transport device 300 that transports them while holding them.

Inside the chamber 10, a substrate holding mechanism 11 holding the substrate P and a mask holding mechanism 12 holding the mask M are provided. By these holding mechanisms, the substrate P and the mask M are maintained in a stopped state during the film forming operation. The chamber 10 is an airtight container, and the inside thereof is maintained in a vacuum state (or reduced pressure state) by the exhaust pump 20 . By opening the gas supply valve 30 and supplying gas into the chamber 10, it is possible to appropriately change the gas atmosphere (or pressure zone) suitable for processing. The entire chamber 10 is electrically grounded by a grounding circuit 40 .

The transport device 300 includes a waiting box 310, a pair of guide rails 321 and 322 for guiding the moving direction of the waiting box 310, and a driving mechanism 330 for moving the waiting box 310. and a standby arm 340 that follows the movement of the standby box 310. The waiting box 310 has a hollow interior and is configured to communicate with the outside of the chamber 10 via the inside of the waiting arm 340 . Therefore, the inside of the waiting box 310 is exposed to the atmosphere. By adopting such a configuration, the wirings 51 and 52 connected to the power source 50 installed outside the chamber 10 can be connected to the film forming material discharge device 100 and the etching beam irradiation device 200. On the other hand, the film forming material release device 100 and the etching beam irradiation device 200 are fixed to the waiting box 310 .

The standby box 310 is configured to be reciprocally movable by a pair of guide rails 321 and 322 . In addition, the waiting box 310 is configured to reciprocate by the drive mechanism 330 . The drive mechanism 330 according to the present embodiment employs a ball screw mechanism and includes a ball screw 331 and a drive source 332 such as a motor for rotating the ball screw 331 . However, the driving mechanism for reciprocating the waiting box 310 is not limited to the ball screw mechanism, and various known technologies such as a rack and pinion mechanism can be employed. In the case of employing a rack and pinion mechanism for the drive mechanism 330, it can be installed in the transport guide portion.

The standby arm 340 is provided to place the wirings 51 and 52 connected to the power source 50 installed outside the chamber 10 into the cavity of the moving standby box 310 . In other words, the inside of the standby arm 340 is made of a hollow structure, and is configured to operate following the movement of the standby box 310 . More specifically, the standby arm 340 includes a first arm 341 and a second arm 342 . As for the 1st arm 341, the one end is comprised with respect to the bottom plate of the chamber 10 so that rotation is possible. And, as for the 2nd arm 342, the one end is pivotally supported with respect to the other end of the 1st arm 341 so that rotation is possible, and the other end is pivotally supported with respect to the waiting box 310 so that rotation is possible.

4 shows a structure near one end of the first arm 341 in a schematic cross-sectional view. As shown, a through hole 10a is installed in the bottom plate of the chamber 10, and a cylindrical protrusion 341a is installed in the first arm 341. And between the bottom plate of the waiting box 310 and the 1st arm 341, the stepped cylindrical member 34lb for connecting these so that rotation is possible is provided. One end of this cylindrical member 34lb is inserted into the through hole 10a provided in the bottom plate of the chamber 10. Moreover, the protruding part 341a attached to the 1st arm 341 is inserted from the other end side of the cylindrical member 34lb. On the other hand, the annular gap between the through hole 10a and the cylindrical member 34lb and the annular gap between the protrusion 341a and the cylindrical member 34lb are formed in the seal rings 341c and 341d, respectively. is sealed by

With the configuration described above, the first arm 341 is rotatably supported with respect to the bottom plate of the chamber 10, and the cavity inside the first arm 341 and the space outside the first arm 341 (chamber The inner space of (10)) is partitioned. That is, the inside of the chamber 10 can be maintained in a vacuum state (or reduced pressure state). On the other hand, the mechanism in which the 1st arm 341 and the 2nd arm 342 are pivotally supported so that rotation is possible, and the mechanism in which the 2nd arm 342 and the waiting box 310 are pivotally supported so that rotation is possible are the same. Since it is a mechanism of , its description is omitted.

Using the transfer device 300 configured as described above, the film forming material releasing device 100 and the etching beam irradiation device 200 fixed to the waiting box 310 are reciprocally moved together with the waiting box 310. It becomes possible. Thereby, film-forming operation|moves with respect to the board|substrate P by simultaneously operating the film-forming material discharge|release apparatus 100 and the etching beam irradiation apparatus 200 during at least one movement of an outbound path and a return path. and etching operations can be performed simultaneously. Therefore, even in the case of forming a film on the large substrate P, the film formation operation and the etching operation are performed simultaneously while moving the film formation material release device 100 and the etching beam irradiation device 200 by the transport device 300. By doing so, it is possible to continuously form a thin film from one end side of the substrate P toward the other end side. In addition, even when unevenness is formed on the surface of the substrate P, since a part of the film-formed portion is formed while being etched, it is possible to form a thin film along the unevenness of the surface of the substrate P. On the other hand, when the film formation material release device 100 and the etching beam irradiation device 200 are arranged as shown in FIG. 2, in the process of moving from right to left in the drawing, the film formation operation and the etching operation are simultaneously performed. you have to do it Thereby, a thin film is formed while a part of the film-formed part is etched.

<Film Formation Material Release Device>

The film-forming material release device in the present invention can be applied to various devices capable of forming a thin film on the surface of a substrate using a film-forming material. Here, referring to Fig. 5, an example of a film formation material discharge device 100 applicable to the film formation device 1 according to the present embodiment will be described. The film-forming material release device 100 shown in FIG. 5 is a magnetron sputtering type sputtering device. This film-forming material release device 100 includes a target unit 110, a support block 120 supporting both ends of the target unit 110, and an end block 130. The support block 120 and the end block 130 are fixed to the upper surface of the waiting box 310 . The target unit 110 includes a cylindrical target 111, a cathode 112 as an electrode disposed on the inner periphery, and a magnet unit 113 disposed inside the cathode 112. The target 111 is rotatably supported by the support block 120 and the end block 130, and is configured to rotate during sputtering by a driving source such as a motor (not shown) provided in the end block 130. has been Furthermore, a magnetic field (leakage magnetic field) is formed between the target 111 and the substrate P by the magnet unit 113 disposed inside the cathode 112 .

In the film forming material release device 100 configured as described above, plasma is generated between the target 111 and the chamber 10 serving as the anode by applying a voltage of a certain level or higher. Then, when positive ions in the plasma are attracted by the electric field and collide with the target 111, particles of the target material are emitted from the target 111. As the particles emitted from the target 111 repeatedly collide, neutral atoms of the target material among the emitted particles are deposited on the substrate P. Thereby, the thin film by the constituent atoms of the target 111 is formed in the board|substrate P. In addition, plasma can be concentrated in a predetermined area between the target 111 and the substrate P by the leakage magnetic field. Since sputtering is performed efficiently by this, the deposition rate of the target material on the substrate P can be improved. Further, in the film forming material release device 100 according to the present embodiment, the target 111 is configured to rotate during sputtering. Accordingly, the consumption area (erosion area due to erosion) of the target 111 is not concentrated in a part, and the efficiency of using the target 111 can be increased.

However, for the film-forming material release device in the present invention, as described above, various devices can be applied, and for example, a sputtering device equipped with a flat target can also be applied.

<Beam irradiation device for etching>

As the beam irradiation device for etching in the present invention, various devices capable of etching a part of a film formed on a substrate surface can be applied. Here, an example of an etching beam irradiation device 200 applicable to the film forming device 1 according to the present embodiment will be described with reference to FIG. 6 .

The etching beam irradiation device 200 includes an ion source 210 and a high voltage power supply 220 that applies a voltage to the ion source 210 . The high-voltage power supply 220 is configured to apply an anode voltage (~several kV) to the ion source 210 .

The ion source 210 includes a cathode 211, a beam irradiation surface 212, an anode 213, and a permanent magnet 214. In this embodiment, the cathode 211 serves as a case of the ion source 210 . The cathode 211 and the anode 213 are each made of SUS, and both are electrically insulated. The cathode 211 is electrically grounded by being fixed to the chamber 10 . Meanwhile, the anode 213 is connected to the high voltage power supply 220 . In this configuration, when a high voltage is applied from the high voltage power supply 220 to the anode 213, an ion beam is emitted from an exit opening provided in the beam irradiation surface 212 of the case (cathode 211). On the other hand, as the principle of the ion source 210, there are a type in which gas is introduced from the rear side of the case and ions are generated inside the case, and a type in which atmospheric gas existing outside the case is ionized, but either one may be used. . In this embodiment, the latter is employed, and gas is supplied into the chamber 10 by opening the gas supply valve 30 . As the gas, argon gas, oxygen gas, nitrogen gas or the like can be used.

The ion source 210 according to this embodiment has a beam irradiation surface 212 of a long and thin shape (line shape or track shape) such that the output aperture has a long longitudinal direction and a short longitudinal direction. And, the ion source 210 is disposed such that the longitudinal direction of the exit opening crosses the longitudinal direction of the substrate P. By using such a vertically long ion source 210, the ion beam is irradiated to the entire width direction of the substrate P. Therefore, a beam can be irradiated with respect to the entire surface of the board|substrate P with one beam scan along the conveyance direction, and speedup of surface treatment (productivity improvement) can be aimed at.

On the other hand, in this embodiment, the case where the etching beam is an ion beam has been described. However, the etching beam is not limited to an ion beam, and a laser beam can also be used. For example, when the material of the film to be etched is an inorganic film (SiN, etc.), an oxide film (SiO2, ITO, etc.), or a metal film (Al, Cu, etc.), an ion beam (Ar, Xe, etc.) It is preferable to use an ion beam generated by In contrast, when the material of the film to be etched is an organic film (organic compound or the like), it is preferable to use a laser beam. In the case of the former, the beam diameter is relatively large, whereas in the case of the latter, the beam diameter is relatively small. Moreover, in the case of the latter, it is more effective if a photothermal conversion material is contained in the film|membrane or base layer.

<Production Apparatus for Electronic Devices>

An electronic device manufacturing apparatus and an electronic device manufactured by the electronic device manufacturing apparatus will be described with reference to FIG. 7 . The film forming apparatus 1 described above can be used as a manufacturing apparatus for manufacturing electronic devices. That is, the film forming apparatus 1 is used on a substrate P (a layered body is formed on the surface of the substrate P) in manufacturing various electronic devices such as semiconductor devices, magnetic devices, and electronic components, optical components, and the like. It can be used to deposit and form a thin film (organic film, metal film, metal oxide film, etc.) on (including). More specifically, the film forming apparatus 1 is preferably used in manufacturing electronic devices such as light emitting elements, photoelectric conversion elements, and touch panels. Among them, the film forming apparatus 1 according to the present embodiment can be particularly preferably applied in the manufacture of organic light-emitting elements such as organic EL (Electro Luminescence) elements and organic photoelectric conversion elements such as organic thin-film solar cells. On the other hand, the electronic device in the present invention includes a display device (e.g. organic EL display device) equipped with a light emitting element, a lighting device (e.g. organic EL lighting device), and an organic solar device equipped with a photoelectric conversion element. It also includes a battery or a sensor (for example, an organic CMOS image sensor).

An example of an organic EL element manufactured by the electronic device manufacturing apparatus is shown in FIG. 7 . The illustrated organic EL device includes an anode (F1), a hole injection layer (F2), a hole transport layer (F3), an organic light emitting layer (F4), an electron transport layer (F5), and an electron injection layer (F6) on a substrate (P). , and the cathode F7 are formed in that order. The film forming apparatus 1 according to the present embodiment is particularly suitable for forming a laminated film such as a metal film or metal oxide used for an electron injection layer or an electrode (cathode or anode) on an organic film by sputtering. it is used In addition, it is not limited to film formation on an organic film, and multilayer film formation can be performed on various surfaces as long as it is a combination of materials that can be formed by sputtering, such as a metal material or an oxide material.

<Excellence of the film forming apparatus and the electronic device manufacturing apparatus according to the present embodiment>

According to the film forming apparatus 1 according to the present embodiment and the electronic device manufacturing apparatus using the same, the film forming material release apparatus 100 and the etching beam irradiation apparatus 200 transported while holding the substrate P As a result, a film forming operation and an etching operation are performed, respectively. Therefore, the substrate P and the mask M are not moved during the film forming operation, and their displacement can be suppressed. Therefore, the precision of the formation position of a thin film can be improved. Further, since the film forming operation and the etching operation are performed simultaneously, the time required to form the thin film can be shortened and productivity can be increased.

(Example 2)

8 shows Example 2 of the present invention. In this embodiment, a configuration in which the beam irradiation direction by the etching beam irradiation device is studied is shown. Since other configurations and actions are the same as those in Example 1, the same reference numerals are assigned to the same components, and descriptions thereof are omitted.

8 is a main configuration diagram of a film forming apparatus according to a second embodiment of the present invention. In FIG. 8 , among the configurations of the film forming apparatus according to the present embodiment, a standby box 310, a film formation material discharge device 100 fixed to the standby box 310, an etching beam irradiation device 200, and a standby box Only a part of the ball screw 331 for moving the 310 and the substrate P and mask M disposed in the chamber are shown. As for the other configurations, they are the same as those shown in the first embodiment, and the description thereof is omitted.

In this embodiment, the etching beam irradiation device 200 is installed so that the etching beam irradiation direction is inclined with respect to the repair direction of the holding surface on which the substrate P is held. In the figure, an arrow D indicates the irradiation direction of the etching beam. As a result, the etching beam is irradiated to the outside of the region X where the waiting box 310 faces the substrate P. Therefore, it is possible to suppress particles generated during etching from adhering to the film forming material release device 100 and the etching beam irradiation device 200 . In addition, in the case where a structure in which an etching beam is irradiated in the perpendicular direction is adopted, a part of the etched material is likely to be reattached to the surface of the substrate P. On the other hand, since reattachment can be suppressed by irradiating an etching beam so as to be inclined with respect to the perpendicular direction, the efficiency of etching can be increased. On the other hand, it goes without saying that the same effects as in the first embodiment can be obtained in the film forming apparatus according to the present embodiment as well.

9 shows Example 3 of the present invention. In this embodiment, a structure in which a pair of etching beam irradiation devices is installed is shown. Since the other configurations and actions are the same as those in Example 1, the same reference numerals are assigned to the same components, and descriptions thereof are omitted.

9 is a main configuration diagram of a film forming apparatus according to a third embodiment of the present invention. In FIG. 9, among the configurations of the film forming apparatus according to the present embodiment, a standby box 310, a film forming material discharge device 100 fixed to the standby box 310, and etching beam irradiation devices 200A and 200B, Only a part of the ball screw 331 for moving the waiting box 310 and the substrate P and mask M disposed in the chamber are shown. As for the other configurations, they are the same as those shown in the first embodiment, and the description thereof is omitted.

In the film forming apparatus according to the present embodiment, the etching beam irradiation apparatuses 200A and 200B, relative to the conveying direction of the film forming material release apparatus 100 and the etching beam irradiation apparatuses 200A and 200B by the conveying device, They are installed on both sides of the film forming material release device 100, respectively. Thereby, in either case of the outgoing path and the returning path, the film forming operation and the etching operation can be simultaneously performed with respect to the substrate P. Therefore, productivity can be further increased. On the other hand, it goes without saying that the same effects as in the first embodiment can be obtained in the film forming apparatus according to the present embodiment as well.

Also in this embodiment, as in the case of the second embodiment, the etching beam irradiation device 200A such that the irradiation direction of the etching beam is inclined with respect to the perpendicular direction of the holding surface on which the substrate P is held. , 200B) may be employed.

1: Tabernacle device
10: chamber
100: film formation material release device
200, 200A, 200B: beam irradiation device for etching
300: transport device
310: waiting box
340: waiting arm
M: mask
P: Substrate

Claims (13)

chamber,
a film formation material discharging device provided in the chamber and performing a film formation operation by discharging the film formation material toward the surface of the substrate held in the chamber;
an etching beam irradiation device provided in the chamber and performing an etching operation by irradiating an etching beam toward the surface of the substrate;
A conveying device for conveying the film formation material release device and the etching beam irradiation device is provided,
Simultaneously performing the film forming operation by the film forming material releasing device and the etching operation by the etching beam irradiating device with respect to the substrate while conveying the film forming material releasing device and the etching beam irradiating device by the conveying device,
The film forming apparatus according to claim 1, wherein the etching beam irradiation device is provided on both sides of the film forming material releasing device in a conveying direction of the conveying device. According to claim 1,
The film-forming device characterized in that the film-forming material releasing device is a sputtering device that performs sputtering. According to claim 2,
The sputtering device includes a cylindrical target that rotates during sputtering. According to claim 3,
The film forming apparatus according to claim 1, wherein the cylindrical target extends in a direction crossing the conveying direction of the conveying apparatus. According to any one of claims 1 to 4,
The etching beam irradiation device has an exit opening through which the etching beam is emitted,
The film forming apparatus according to claim 1, wherein the exit opening extends in a direction crossing the conveying direction of the conveying apparatus. According to any one of claims 1 to 4,
The etching beam irradiated by the etching beam irradiation device is an ion beam. According to claim 6,
The film forming apparatus characterized in that the film to be subjected to the etching operation is any one of an inorganic film, an oxide film, and a metal film. According to any one of claims 1 to 4,
The etching beam irradiated by the etching beam irradiation device is a laser beam. According to claim 8,
A film forming apparatus characterized in that the film to be subjected to the etching operation is an organic film. According to any one of claims 1 to 4,
An irradiation direction of the etching beam is inclined with respect to a perpendicular direction of a holding surface on which the substrate is held. According to any one of claims 1 to 4,
the conveying device holds and conveys the film forming material releasing device and the etching beam irradiating device so that the film forming material releasing device and the etching beam irradiating device are transported back and forth;
The film forming operation by the film forming material releasing device with respect to the substrate while the film forming material releasing device and the etching beam irradiation device held by the conveying device move at least on either one of the outgoing and returning paths of the reciprocating movement. and the etching operation by the etching beam irradiation device are simultaneously performed. Equipped with the film forming apparatus according to any one of claims 1 to 4;
An electronic device manufacturing apparatus characterized by forming an organic film on a substrate by the film forming apparatus. Equipped with the film forming apparatus according to any one of claims 1 to 4;
An electronic device manufacturing apparatus characterized by forming a metal film or a metal oxide film on an organic film formed on a substrate by the film forming apparatus.

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